RF & Protection Devices
Data Sheet
Revision 1.0, 2012-01-30
BFP420F
Low Noise Silicon Bipolar RF Transistor
Edition 2012-01-30
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BFP420F
Data Sheet 3 Revision 1.0, 2011-09-05
Trademarks of Infineon Technologies AG
BlueMoon™, COMNEON™, C166™, CROSSAVE™, CanPAK™, CIPOS™, CoolMOS™, CoolSET™,
CORECONTROL™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™,
EiceDRIVER™, EUPEC™, FCOS™, HITFET™, HybridPACK™, ISOFACE™, I²RF™, IsoPACK™, MIPAQ™,
ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PROFET™, PRO-SIL™,
PRIMARION™, PrimePACK™, RASIC™, ReverSave™, SatRIC™, SensoNor™, SIEGET™, SINDRION™,
SMARTi™, SmartLEWIS™, TEMPFET™, thinQ!™, TriCore™, TRENCHSTOP™, X-GOLD™, XMM™, X-PMU™,
XPOSYS™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, PRIMECELL™,
REALVIEW™, THUMB™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership.
Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation
Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation.
FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of
Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of
INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of
Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP.
MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Sattelite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2010-03-22
BFP420F, Low Noise Silicon Bipolar RF Transistor
Revision History: 2011-09-05, Revision 1.0
Previous Revision: Rev. 1.0
Page Subjects (major changes since last revision)
This datasheet replaces the revision from 20 April 2007.
The product itself has not been changed and the device characteristics remain unchanged.
Only the product description and information available in the datasheet has been expanded and
updated.
BFP420F
Table of Contents
Data Sheet 4 Revision 1.0, 2011-09-05
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.2 General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.3 Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.4 Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
4.5 Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
5 Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
6 Package Information TSFP-4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Table of Contents
BFP420F
List of Figures
Data Sheet 5 Revision 1.0, 2011-09-05
Figure 1 Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Figure 2 Testing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 3 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter . . . . . . . . . . . . . . . . . 18
Figure 4 DC Current Gain hFE = f (IC), VCE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 5 Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 3 V. . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 6 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 3 V . . . . . . . . . . . . . . . . . . . . 19
Figure 7 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 3 V . . . . . . . . . . . . . . . . . . . . 20
Figure 8 Collector Emitter Breakdown Voltage VCER = f (RBE), IC = 1 mA . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 9 Transition Frequency fT = f (IC), f = 2 GHz, VCE = Parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 10 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters. . . . . . . . . . . . . . . . . 21
Figure 11 3rd Order Intercept Point at output OIP3 [dBm] = f (IC, VCE), ZS = ZL= 50 Ω, f = 1900 MHz . . . . . 22
Figure 12 Compression Point at output OP1dB [dBm] = f (IC, VCE), ZS = ZL= 50 Ω, f = 1900 MHz . . . . . . . . . 22
Figure 13 Collector Base Capacitance CCB = f (VCB), f = 1 MHz. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 14 Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 15 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 15 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . 24
Figure 16 Maximum Power Gain Gmax = f (VCE), IC = 15 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 24
Figure 17 Input Matching S11 = f ( f ), VCE = 3 V, IC = 4 / 15 / 45 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 18 Source Impedance for Minimum Noise Figure Zopt = f ( f ) , VCE = 3 V, IC = 4 / 15 mA . . . . . . . . . 25
Figure 19 Output Matching S22 = f ( f ), VCE = 3 V, IC = 4 / 15 / 45 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 20 Noise Figure NFmin = f ( f ), VCE = 3 V, IC = 4 / 15 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 21 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 27
Figure 22 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz. . . . . . . . . . . . . . . . . . . . 27
Figure 23 Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Figure 24 Package Foot Print . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Figure 25 Marking Example (Marking BFP420F: AMs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Figure 26 Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
List of Figures
BFP420F
List of Tables
Data Sheet 6 Revision 1.0, 2011-09-05
Table 1 Maximum Ratings at TA = 25°C (unless otherwise specified). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Table 2 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Table 3 DC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Table 4 General AC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Table 5 AC Characteristics, f = 150 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Table 6 AC Characteristics, f = 450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Table 7 AC Characteristics, f = 900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Table 8 AC Characteristics, f = 1500 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 9 AC Characteristics, f = 1900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 10 AC Characteristics, f = 2400 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Table 11 AC Characteristics, f = 3500 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Table 12 AC Characteristics, f = 5500 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
List of Tables
TSFP-4-1
1
2
4
3
Product Name Package Pin Configuration Marking
BFP420F TSFP-4-1 1 = B 2 = E 3 = C 4 = E AMs
Low Noise Silicon Bipolar RF Transistor
BFP420F
Data Sheet 7 Revision 1.0, 2011-09-05
1 Features
• Low noise high gain silicon bipolar RF transistor
• Based on Infineon´s reliable very high volume 25 GHz
silicon bipolar technology
• 0.9 dB minimum noise figure typical at 900 MHz, 3 V, 4 mA
• 16 dB maximum gain (Gma) typical at 2.4 GHz, 3 V, 15 mA
• 28 dBm OIP3 typical at 2.4 GHz, 4 V, 40 mA
• 16.5 dBm OP1dB typical at 2.4 GHz, 4 V, 40 mA
• Popular in discrete oscillators
• Thin, small, flat, Pb-free (RoHS compliant) and Hal-free
(“green”) package with visible leads
Applications
As Low Noise Amplifier (LNA) in
• Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB)
• Multimedia applications such as mobile/portable TV, CATV, FM Radio
• ISM applications like RKE, AMR and Zigbee
As discrete active mixer in RF Frontends
As active device in discretes oscillators
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
BFP420F
Maximum Ratings
Data Sheet 8 Revision 1.0, 2011-09-05
2 Maximum Ratings
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Table 1 Maximum Ratings at TA = 25°C (unless otherwise specified)
Parameter Symbol Values Unit Note / Test Condition
Min. Max.
Collector emitter voltage VCEO Open base
–4.5V
TA = 25°C
–4.1V
TA = -55 °C
Collector base voltage VCBO – 15 V Open emitter
Collector emitter voltage VCES – 15 V Emitter / base shortened
Emitter base voltage VEBO – 1.5 V Open collector
Base current IB9mA–
Collector current IC–60mA–
RF input power PRFin ––dBm–
Total power dissipation1)
1) TS is the soldering point temperature. TS measured on the emitter lead at the soldering point of the pcb.
Ptot –210mWTS ≤ 100 °C
Junction temperature TJ–150°C–
Storage temperature TStg -55 150 °C –
BFP420F
Thermal Characteristics
Data Sheet 9 Revision 1.0, 2011-09-05
3 Thermal Characteristics
Figure 1 Total Power Dissipation Ptot = f (Ts)
Table 2 Thermal Resistance
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Junction - soldering point1)
1) For calculation of RthJA please refer to Application Note Thermal Resistance AN 077
RthJS –240–K/W–
0 25 50 75 100 125 150
0
20
40
60
80
100
120
140
160
180
200
220
240
260
T
S
[°C]
P
tot
[mW]
BFP420F
Electrical Characteristics
Data Sheet 10 Revision 1.0, 2011-09-05
4 Electrical Characteristics
4.1 DC Characteristics
4.2 General AC Characteristics
Table 3 DC Characteristics at TA = 25 °C
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Collector emitter breakdown voltage V(BR)CEO 4.5 5.5 – V IC = 1 mA, IB = 0
Open base
Collector emitter leakage current ICES ––10μAVCE = 15 V, VBE = 0
–130nA
VCE = 3 V, VBE = 0
Emitter/base shorted
Collector base leakage current ICBO –130nAVCB = 3 V, IE = 0
Open emitter
Emitter base leakage current IEBO – 10 100 nA VEB = 0.5 V, IC = 0
Open collector
DC current gain hFE 60 95 130 VCE = 4 V, IC = 5 mA
Pulse measured
Table 4 General AC Characteristics at TA = 25 °C
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Transition frequency fT18 25 – GHz VCE = 3 V, IC = 30 mA
f = 2 GHz
Collector base capacitance CCB – 0.15 0.3 pF VCB = 2 V, VBE = 0
f = 1 MHz
Emitter grounded
Collector emitter capacitance CCE –0.46–pFVCE = 2 V, VBE = 0
f = 1 MHz
Base grounded
Emitter base capacitance CEB –0.55–pFVEB = 0.5 V, VCB = 0
f = 1 MHz
Collector grounded
BFP420F
Electrical Characteristics
Data Sheet 11 Revision 1.0, 2011-09-05
4.3 Frequency Dependent AC Characteristics
Measurement setup is a test fixture with Bias T’s in a 50 Ω system, TA = 25 °C
Figure 2 Testing Circuit
Table 5 AC Characteristics, f = 150 MHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum power gain dB ZS = ZSoptG, ZL = ZLoptG
@ low noise operating point Gms –30– VCE = 3 V, IC = 4 mA
@ recommended trade off oper. point Gms –34.5– VCE = 3 V, IC = 15 mA
@ max. linearity operating point Gms –37– VCE = 4 V, IC = 40 mA
Transducer gain dB ZS = ZL = 50 Ω
@ low noise operating point S21 –22– VCE = 3 V, IC = 4 mA
@ recommended trade off oper. point S21 –30– VCE = 3 V, IC = 15 mA
@ max. linearity operating point S21 –33– VCE = 4 V, IC = 40 mA
Noise figure dB ZS = ZSoptN
@ low noise operating point VCE = 3 V, IC = 4 mA
Minimum noise figure NFmin –0.9–
Associated gain Gass –24–
@ recommended trade off oper. point VCE = 3 V, IC = 15 mA
Minimum noise figure NFmin –1.4–
Associated gain Gass –29–
Linearity dBm ZS = ZL = 50 Ω
@ recommended trade off oper. point VCE = 3 V, IC = 15 mA
3rd order intercept point at output OIP3–21–
1 dB gain compression point at output OP1dB –7–
OUT
IN
Bias -T
Bias-T
B
(Pin 1)
EC
E
VC
Top View
VB
BFP420F
Electrical Characteristics
Data Sheet 12 Revision 1.0, 2011-09-05
@ max. linearity operating point VCE = 4 V, IC = 40 mA
3rd order intercept point at output OIP3–25–
1 dB gain compression point at output OP1dB –15.5–
Table 6 AC Characteristics, f = 450 MHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum power gain dB ZS = ZSoptG, ZL = ZLoptG
@ low noise operating point Gms –25– VCE = 3 V, IC = 4 mA
@ recommended trade off oper. point Gms –29– VCE = 3 V, IC = 15 mA
@ max. linearity operating point Gms –31– VCE = 4 V, IC = 40 mA
Transducer gain dB ZS = ZL = 50 Ω
@ low noise operating point S21 –21– VCE = 3 V, IC = 4 mA
@ recommended trade off oper. point S21 –27– VCE = 3 V, IC = 15 mA
@ max. linearity operating point S21 –28.5– VCE = 4 V, IC = 40 mA
Noise figure dB ZS = ZSoptN
@ low noise operating point VCE = 3 V, IC = 4 mA
Minimum noise figure NFmin –0.9–
Associated gain Gass –22.5–
@ recommended trade off oper. point VCE = 3 V, IC = 15 mA
Minimum noise figure NFmin –1.4–
Associated gain Gass –27–
Linearity dBm ZS = ZL = 50 Ω
@ recommended trade off oper. point VCE = 3 V, IC = 15 mA
3rd order intercept point at output OIP3–21.5–
1 dB gain compression point at output OP1dB –8–
@ max. linearity operating point VCE = 4 V, IC = 40 mA
3rd order intercept point at output OIP3–26.5–
1 dB gain compression point at output OP1dB –16.5–
Table 7 AC Characteristics, f = 900 MHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum power gain dB ZS = ZSoptG, ZL = ZLoptG
@ low noise operating point Gms –22– VCE = 3 V, IC = 4 mA
@ recommended trade off oper. point Gms –25– VCE = 3 V, IC = 15 mA
@ max. linearity operating point Gms –26.5– VCE = 4 V, IC = 40 mA
Table 5 AC Characteristics, f = 150 MHz (cont’d)
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
BFP420F
Electrical Characteristics
Data Sheet 13 Revision 1.0, 2011-09-05
Transducer gain dB ZS = ZL = 50 Ω
@ low noise operating point S21 –19– VCE = 3 V, IC = 4 mA
@ recommended trade off oper. point S21 –23– VCE = 3 V, IC = 15 mA
@ max. linearity operating point S21 –24– VCE = 4 V, IC = 40 mA
Noise figure dB ZS = ZSoptN
@ low noise operating point VCE = 3 V, IC = 4 mA
Minimum noise figure NFmin –0.95–
Associated gain Gass –20–
@ recommended trade off oper. point VCE = 3 V, IC = 15 mA
Minimum noise figure NFmin –1.4–
Associated gain Gass –23–
Linearity dBm ZS = ZL = 50 Ω
@ recommended trade off oper. point VCE = 3 V, IC = 15 mA
3rd order intercept point at output OIP3–23.5–
1 dB gain compression point at output OP1dB –8–
@ max. linearity operating point VCE = 4 V, IC = 40 mA
3rd order intercept point at output OIP3–27.5–
1 dB gain compression point at output OP1dB –17–
Table 8 AC Characteristics, f = 1500 MHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum power gain dB ZS = ZSoptG, ZL = ZLoptG
@ low noise operating point Gms –19– VCE = 3 V, IC = 4 mA
@ recommended trade off oper. point Gms –22– VCE = 3 V, IC = 15 mA
@ max. linearity operating point Gma –22– VCE = 4 V, IC = 40 mA
Transducer gain dB ZS = ZL = 50 Ω
@ low noise operating point S21 –16– VCE = 3 V, IC = 4 mA
@ recommended trade off oper. point S21 –19– VCE = 3 V, IC = 15 mA
@ max. linearity operating point S21 –19.5– VCE = 4 V, IC = 40 mA
Noise figure dB ZS = ZSoptN
@ low noise operating point VCE = 3 V, IC = 4 mA
Minimum noise figure NFmin –1–
Associated gain Gass –16.5–
@ recommended trade off oper. point VCE = 3 V, IC = 15 mA
Minimum noise figure NFmin –1.5–
Associated gain Gass –19–
Table 7 AC Characteristics, f = 900 MHz (cont’d)
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
BFP420F
Electrical Characteristics
Data Sheet 14 Revision 1.0, 2011-09-05
Linearity dBm ZS = ZL = 50 Ω
@ recommended trade off oper. point VCE = 3 V, IC = 15 mA
3rd order intercept point at output OIP3–22.5–
1 dB gain compression point at output OP1dB –7–
@ max. linearity operating point VCE = 4 V, IC = 40 mA
3rd order intercept point at output OIP3–27.5–
1 dB gain compression point at output OP1dB –16–
Table 9 AC Characteristics, f = 1900 MHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum power gain dB ZS = ZSoptG, ZL = ZLoptG
@ low noise operating point Gms –18– VCE = 3 V, IC = 4 mA
@ recommended trade off oper. point Gma –19.5– VCE = 3 V, IC = 15 mA
@ max. linearity operating point Gma –19– VCE = 4 V, IC = 40 mA
Transducer gain dB ZS = ZL = 50 Ω
@ low noise operating point S21 –14– VCE = 3 V, IC = 4 mA
@ recommended trade off oper. point S21 –16.5– VCE = 3 V, IC = 15 mA
@ max. linearity operating point S21 –17– VCE = 4 V, IC = 40 mA
Noise figure dB ZS = ZSoptN
@ low noise operating point VCE = 3 V, IC = 4 mA
Minimum noise figure NFmin –1.1–
Associated gain Gass –15–
@ recommended trade off oper. point VCE = 3 V, IC = 15 mA
Minimum noise figure NFmin –1.5–
Associated gain Gass –17–
Linearity dBm ZS = ZL = 50 Ω
@ recommended trade off oper. point VCE = 3 V, IC = 15 mA
3rd order intercept point at output OIP3–24–
1 dB gain compression point at output OP1dB –9–
@ max. linearity operating point VCE = 4 V, IC = 40 mA
3rd order intercept point at output OIP3–28–
1 dB gain compression point at output OP1dB –17–
Table 8 AC Characteristics, f = 1500 MHz (cont’d)
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
BFP420F
Electrical Characteristics
Data Sheet 15 Revision 1.0, 2011-09-05
Table 10 AC Characteristics, f = 2400 MHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum power gain dB ZS = ZSoptG, ZL = ZLoptG
@ low noise operating point Gms –16.5– VCE = 3 V, IC = 4 mA
@ recommended trade off oper. point Gma –16.5– VCE = 3 V, IC = 15 mA
@ max. linearity operating point Gma –16.5– VCE = 4 V, IC = 40 mA
Transducer gain dB ZS = ZL = 50 Ω
@ low noise operating point S21 –12– VCE = 3 V, IC = 4 mA
@ recommended trade off oper. point S21 –14.5– VCE = 3 V, IC = 15 mA
@ max. linearity operating point S21 –15– VCE = 4 V, IC = 40 mA
Noise figure dB ZS = ZSoptN
@ low noise operating point VCE = 3 V, IC = 4 mA
Minimum noise figure NFmin –1.2–
Associated gain Gass –12.5–
@ recommended trade off oper. point VCE = 3 V, IC = 15 mA
Minimum noise figure NFmin –1.6–
Associated gain Gass –15–
Linearity dBm ZS = ZL = 50 Ω
@ recommended trade off oper. point VCE = 3 V, IC = 15 mA
3rd order intercept point at output OIP3–24.5–
1 dB gain compression point at output OP1dB –8.5–
@ max. linearity operating point VCE = 4 V, IC = 40 mA
3rd order intercept point at output OIP3–28–
1 dB gain compression point at output OP1dB –16.5–
Table 11 AC Characteristics, f = 3500 MHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum power gain dB ZS = ZSoptG, ZL = ZLoptG
@ low noise operating point Gma –11.5– VCE = 3 V, IC = 4 mA
@ recommended trade off oper. point Gma –12.5– VCE = 3 V, IC = 15 mA
@ max. linearity operating point Gma –13– VCE = 4 V, IC = 40 mA
Transducer gain dB ZS = ZL = 50 Ω
@ low noise operating point S21 –9– VCE = 3 V, IC = 4 mA
@ recommended trade off oper. point S21 –11– VCE = 3 V, IC = 15 mA
@ max. linearity operating point S21 –11.5– VCE = 4 V, IC = 40 mA
Noise figure dB ZS = ZSoptN
@ low noise operating point VCE = 3 V, IC = 4 mA
Minimum noise figure NFmin –1.6–
BFP420F
Electrical Characteristics
Data Sheet 16 Revision 1.0, 2011-09-05
Associated gain Gass –10–
@ recommended trade off oper. point VCE = 3 V, IC = 15 mA
Minimum noise figure NFmin –1.8–
Associated gain Gass –11.5–
Linearity dBm ZS = ZL = 50 Ω
@ recommended trade off oper. point VCE = 3 V, IC = 15 mA
3rd order intercept point at output OIP3–22–
1 dB gain compression point at output OP1dB –8–
@ max. linearity operating point VCE = 4 V, IC = 40 mA
3rd order intercept point at output OIP3–26–
1 dB gain compression point at output OP1dB –17–
Table 12 AC Characteristics, f = 5500 MHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum power gain dB ZS = ZSoptG, ZL = ZLoptG
@ low noise operating point Gma –7.5– VCE = 3 V, IC = 4 mA
@ recommended trade off oper. point Gma –8.5– VCE = 3 V, IC = 15 mA
@ max. linearity operating point Gma –9– VCE = 4 V, IC = 40 mA
Transducer gain dB ZS = ZL = 50 Ω
@ low noise operating point S21 –5.5– VCE = 3 V, IC = 4 mA
@ recommended trade off oper. point S21 –7– VCE = 3 V, IC = 15 mA
@ max. linearity operating point S21 –8– VCE = 4 V, IC = 40 mA
Noise figure dB ZS = ZSoptN
@ low noise operating point VCE = 3 V, IC = 4 mA
Minimum noise figure NFmin –2.2–
Associated gain Gass –5–
@ recommended trade off oper. point VCE = 3 V, IC = 15 mA
Minimum noise figure NFmin –2.3–
Associated gain Gass –8–
Linearity dBm ZS = ZL = 50 Ω
@ recommended trade off oper. point VCE = 3 V, IC = 15 mA
3rd order intercept point at output OIP3–22–
1 dB gain compression point at output OP1dB –8.5–
@ max. linearity operating point VCE = 4 V, IC = 40 mA
3rd order intercept point at output OIP3–26–
1 dB gain compression point at output OP1dB –17–
Table 11 AC Characteristics, f = 3500 MHz (cont’d)
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
BFP420F
Electrical Characteristics
Data Sheet 17 Revision 1.0, 2011-09-05
Note:
1. Gms = IS21 / S12I for k < 1; Gma = IS21 / S12I(k-(k2-1)1/2) for k > 1
2. In order to get the NFmin values stated in this chapter the test fixture losses have been subtracted from all
measured results.
3. OIP3 value depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50
Ω
from 0.2 MHz to 12 GHz.
BFP420F
Electrical Characteristics
Data Sheet 18 Revision 1.0, 2011-09-05
4.4 Characteristic DC Diagrams
Figure 3 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter
Figure 4 DC Current Gain hFE = f (IC), VCE = 3 V
0 1 2 3 4 5 6
0
5
10
15
20
25
30
35
40
45
50
55
60
65
I
B
= 25µA
I
B
= 75µA
I
B
= 125µA
I
B
= 175µA
I
B
= 225µA
I
B
= 275µA
I
B
= 325µA
I
B
= 375µA
I
B
= 425µA
I
B
= 475µA
I
B
= 525µA
I
B
= 575µA
I
B
= 625µA
I
B
= 675µA
I
B
= 725µA
V
CE
[V]
I
C
[mA]
10
−1
10
0
10
1
10
2
10
1
10
2
IC [mA]
hFE
BFP420F
Electrical Characteristics
Data Sheet 19 Revision 1.0, 2011-09-05
Figure 5 Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 3 V
Figure 6 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 3 V
0.5 0.6 0.7 0.8 0.9 1
10
−5
10
−4
10
−3
10
−2
10
−1
10
0
10
1
10
2
V
BE
[V]
I
C
[mA]
0.5 0.6 0.7 0.8 0.9 1
10
−7
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
10
0
V
BE
[V]
I
B
[mA]
BFP420F
Electrical Characteristics
Data Sheet 20 Revision 1.0, 2011-09-05
Figure 7 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 3 V
Figure 8 Collector Emitter Breakdown Voltage VCER = f (RBE), IC = 1 mA
0.3 0.5 0.7 0.9 1.1 1.3 1.5
10
−11
10
−10
10
−9
10
−8
10
−7
10
−6
V
EB
[V]
I
B
[A]
10
4
10
5
10
6
10
7
5
5.5
6
6.5
7
7.5
8
R
BE
[Ω]
V
CER
[V]
R
BE
B
C
E
BFP420F
Electrical Characteristics
Data Sheet 21 Revision 1.0, 2011-09-05
4.5 Characteristic AC Diagrams
Figure 9 Transition Frequency fT = f (IC), f = 2 GHz, VCE = Parameter
Figure 10 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters
0 10 20 30 40 50 60 70
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
3.00V
2.00V
1.00V
I
C
[mA]
f
T
[GHz]
4.00V
0 10 20 30 40 50 60
−4
−2
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
I
C
[mA]
OIP
3
[dBm]
3V, 900MHz
4V, 900MHz
3V, 1900MHz
4V, 1900MHz
BFP420F
Electrical Characteristics
Data Sheet 22 Revision 1.0, 2011-09-05
Figure 11 3rd Order Intercept Point at output OIP3 [dBm] = f (IC, VCE), ZS = ZL= 50 Ω, f = 1900 MHz
Figure 12 Compression Point at output OP1dB [dBm] = f (IC, VCE), ZS = ZL= 50 Ω, f = 1900 MHz
12
13
14
14
15
15
16
1
6
17
17
1
7
18
18
18
19
19
19
19
20
20
20
20
20
21
21
21
21
21
22
22
22
22
22
2
3
23
23
23
23
2
4
24
24
24
24
25
25
25
25
25
26
26
26
26
27
27
27
27
28
28
VCE [V]
IC [mA]
1 1.5 2 2.5 3 3.5 4
5
10
15
20
25
30
35
40
45
50
55
60
0
0
0
0
1
1
1
12
2
2
2
3
3
3
3
4
4
4
4
4
5
5
5
5
5
6
6
6
6
6
7
7
7
7
7
7
8
8
8
8
8
9
9
9
9
9
10
10
10
10
10
11
11
11
11
12
12
12
12
13
13
13
13
14
14
14
15
15
15
16
16
17
VCE [V]
IC [mA]
1 1.5 2 2.5 3 3.5 4
5
10
15
20
25
30
35
40
45
50
55
60
BFP420F
Electrical Characteristics
Data Sheet 23 Revision 1.0, 2011-09-05
Figure 13 Collector Base Capacitance CCB = f (VCB), f = 1 MHz
Figure 14 Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 15 mA
0 0.5 1 1.5 2 2.5 3 3.5 4
0
0.06
0.12
0.18
0.24
0.3
VCB [V]
CCB [pF]
0 1 2 3 4 5 6
0
5
10
15
20
25
30
35
40
f [GHz]
G [dB]
G
ms
G
ma
|S
21
|
2
BFP420F
Electrical Characteristics
Data Sheet 24 Revision 1.0, 2011-09-05
Figure 15 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz
Figure 16 Maximum Power Gain Gmax = f (VCE), IC = 15 mA, f = Parameter in GHz
0 10 20 30 40 50 60 70 80
3
6
9
12
15
18
21
24
27
30
33
36
39
5.50GHz
3.50GHz
2.40GHz
1.90GHz
1.50GHz
0.90GHz
0.45GHz
0.15GHz
I
C
[mA]
G [dB]
0 1 2 3 4 5 6
3
6
9
12
15
18
21
24
27
30
33
36
39
5.50GHz
3.50GHz
2.40GHz
1.90GHz
1.50GHz
0.90GHz
0.45GHz
0.15GHz
V
CE
[V]
G [dB]
BFP420F
Electrical Characteristics
Data Sheet 25 Revision 1.0, 2011-09-05
Figure 17 Input Matching S11 = f ( f ), VCE = 3 V, IC = 4 / 15 / 45 mA
Figure 18 Source Impedance for Minimum Noise Figure Zopt = f ( f ) , VCE = 3 V, IC = 4 / 15 mA
10.1 0.2 0.3 0.4 0.5 21.5 3 4 5
0
1
−1
1.5
−1.5
2
−2
3
−3
4
−4
5
−5
10
−10
0.5
−0.5
0.1
−0.1
0.2
−0.2
0.3
−0.3
0.4
−0.4
0.03 to 6 GHz
step: 1 GHz 4 mA
15 mA
40 mA
BFP420F
Electrical Characteristics
Data Sheet 26 Revision 1.0, 2011-09-05
Figure 19 Output Matching S22 = f ( f ), VCE = 3 V, IC = 4 / 15 / 45 mA
Figure 20 Noise Figure NFmin = f ( f ), VCE = 3 V, IC = 4 / 15 mA, ZS = Zopt
10.1 0.2 0.3 0.4 0.5 21.5 3 4 5
0
1
−1
1.5
−1.5
2
−2
3
−3
4
−4
5
−5
10
−10
0.5
−0.5
0.1
−0.1
0.2
−0.2
0.3
−0.3
0.4
−0.4
0.03 to 6 GHz
step: 1 GHz 4 mA
15 mA
40 mA
0 0.5 1 1.5 2 2.5 3 3.5 4
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
f [GHz]
NFmin [dB]
I
C
= 4mA
I
C
= 16mA
BFP420F
Electrical Characteristics
Data Sheet 27 Revision 1.0, 2011-09-05
Figure 21 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz
Figure 22 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz
Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as
a guarantee that all devices have identical characteristic curves. TA = 25 °C.
0 5 10 15 20 25 30 35
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
I
c
[mA]
NFmin [dB]
f = 0.45GHz
f = 0.9GHz
f = 1.9GHz
f = 2.4GHz
f = 3.5GHz
0 5 10 15 20 25 30 35
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
3.2
3.4
I
c
[mA]
NF50 [dB]
f = 0.45GHz
f = 0.9GHz
f = 1.9GHz
f = 2.4GHz
f = 3.5GHz
BFP420F
Simulation Data
Data Sheet 28 Revision 1.0, 2011-09-05
5 Simulation Data
For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please
consult our website and download the latest versions before actually starting your design.
You find the BFP420F SPICE GP model on the official homepage of Infineon RF transistors in MWO- and ADS-
format, which you can import into these circuit simulation tools very quickly and conveniently. The model already
contains the package parasitics and is ready to use for DC- and high frequency simulations. The terminals of the
model circuit correspond to the pin configuration of the device.
The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFP420F SPICE
GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP
model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure
(including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have
been extracted.
BFP420F
Package Information TSFP-4
Data Sheet 29 Revision 1.0, 2011-09-05
6 Package Information TSFP-4
Figure 23 Package Outline
Figure 24 Package Foot Print
Figure 25 Marking Example (Marking BFP420F: AMs)
Figure 26 Tape Dimensions
±0.05
0.2
±0.05
1.4
12
±0.05
0.8
1.2
±0.05
±0.04
0.55
±0.05
0.2
±0.05
0.15
±0.05
0.2
0.5 ±0.05
0.5 ±0.05
43
TSFP-4-1, -2-PO V04
0.35
0.45
0.9
0.5 0.5
TSFP-4-1, -2-FP V04
Marking
Pin 1
Manufacturer
XYs
Marking
Pin 1
Manufacturer
XYs
TSFP-4-1
,
-2-TP V0
5
40.2
1.4
8
Pin 1 1.55 0.7
Published by Infineon Technologies AG
www.infineon.com