BFP420F Low Noise Silicon Bipolar RF Transistor Data Sheet Revision 1.0, 2012-01-30 RF & Protection Devices Edition 2012-01-30 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BFP420F BFP420F, Low Noise Silicon Bipolar RF Transistor Revision History: 2011-09-05, Revision 1.0 Previous Revision: Rev. 1.0 Page Subjects (major changes since last revision) This datasheet replaces the revision from 20 April 2007. The product itself has not been changed and the device characteristics remain unchanged. Only the product description and information available in the datasheet has been expanded and updated. Trademarks of Infineon Technologies AG BlueMoonTM, COMNEONTM, C166TM, CROSSAVETM, CanPAKTM, CIPOSTM, CoolMOSTM, CoolSETTM, CORECONTROLTM, DAVETM, EasyPIMTM, EconoBRIDGETM, EconoDUALTM, EconoPACKTM, EconoPIMTM, EiceDRIVERTM, EUPECTM, FCOSTM, HITFETTM, HybridPACKTM, ISOFACETM, IRFTM, IsoPACKTM, MIPAQTM, ModSTACKTM, my-dTM, NovalithICTM, OmniTuneTM, OptiMOSTM, ORIGATM, PROFETTM, PRO-SILTM, PRIMARIONTM, PrimePACKTM, RASICTM, ReverSaveTM, SatRICTM, SensoNorTM, SIEGETTM, SINDRIONTM, SMARTiTM, SmartLEWISTM, TEMPFETTM, thinQ!TM, TriCoreTM, TRENCHSTOPTM, X-GOLDTM, XMMTM, X-PMUTM, XPOSYSTM. Other Trademarks Advance Design SystemTM (ADS) of Agilent Technologies, AMBATM, ARMTM, MULTI-ICETM, PRIMECELLTM, REALVIEWTM, THUMBTM of ARM Limited, UK. AUTOSARTM is licensed by AUTOSAR development partnership. BluetoothTM of Bluetooth SIG Inc. CAT-iqTM of DECT Forum. COLOSSUSTM, FirstGPSTM of Trimble Navigation Ltd. EMVTM of EMVCo, LLC (Visa Holdings Inc.). EPCOSTM of Epcos AG. FLEXGOTM of Microsoft Corporation. FlexRayTM is licensed by FlexRay Consortium. HYPERTERMINALTM of Hilgraeve Incorporated. IECTM of Commission Electrotechnique Internationale. IrDATM of Infrared Data Association Corporation. ISOTM of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLABTM of MathWorks, Inc. MAXIMTM of Maxim Integrated Products, Inc. MICROTECTM, NUCLEUSTM of Mentor Graphics Corporation. MifareTM of NXP. MIPITM of MIPI Alliance, Inc. MIPSTM of MIPS Technologies, Inc., USA. muRataTM of MURATA MANUFACTURING CO., MICROWAVE OFFICETM (MWO) of Applied Wave Research Inc., OmniVisionTM of OmniVision Technologies, Inc. OpenwaveTM Openwave Systems Inc. RED HATTM Red Hat, Inc. RFMDTM RF Micro Devices, Inc. SIRIUSTM of Sirius Sattelite Radio Inc. SOLARISTM of Sun Microsystems, Inc. SPANSIONTM of Spansion LLC Ltd. SymbianTM of Symbian Software Limited. TAIYO YUDENTM of Taiyo Yuden Co. TEAKLITETM of CEVA, Inc. TEKTRONIXTM of Tektronix Inc. TOKOTM of TOKO KABUSHIKI KAISHA TA. UNIXTM of X/Open Company Limited. VERILOGTM, PALLADIUMTM of Cadence Design Systems, Inc. VLYNQTM of Texas Instruments Incorporated. VXWORKSTM, WIND RIVERTM of WIND RIVER SYSTEMS, INC. ZETEXTM of Diodes Zetex Limited. Last Trademarks Update 2010-03-22 Data Sheet 3 Revision 1.0, 2011-09-05 BFP420F Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 4.1 4.2 4.3 4.4 4.5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 6 Package Information TSFP-4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Data Sheet 4 10 10 10 11 18 21 Revision 1.0, 2011-09-05 BFP420F List of Figures List of Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 Figure 13 Figure 14 Figure 15 Figure 16 Figure 17 Figure 18 Figure 19 Figure 20 Figure 21 Figure 22 Figure 23 Figure 24 Figure 25 Figure 26 Data Sheet Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Testing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter . . . . . . . . . . . . . . . . . 18 DC Current Gain hFE = f (IC), VCE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 3 V. . . . . . . . . . . . . . . . . . . . . . . . . 19 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 3 V . . . . . . . . . . . . . . . . . . . . 19 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 3 V . . . . . . . . . . . . . . . . . . . . 20 Collector Emitter Breakdown Voltage VCER = f (RBE), IC = 1 mA . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Transition Frequency fT = f (IC), f = 2 GHz, VCE = Parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 , VCE, f = Parameters. . . . . . . . . . . . . . . . . 21 3rd Order Intercept Point at output OIP3 [dBm] = f (IC, VCE), ZS = ZL= 50 , f = 1900 MHz . . . . . 22 Compression Point at output OP1dB [dBm] = f (IC, VCE), ZS = ZL= 50 , f = 1900 MHz . . . . . . . . . 22 Collector Base Capacitance CCB = f (VCB), f = 1 MHz. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Gain Gma, Gms, IS21I = f (f), VCE = 3 V, IC = 15 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . 24 Maximum Power Gain Gmax = f (VCE), IC = 15 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 24 Input Matching S11 = f ( f ), VCE = 3 V, IC = 4 / 15 / 45 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Source Impedance for Minimum Noise Figure Zopt = f ( f ) , VCE = 3 V, IC = 4 / 15 mA . . . . . . . . . 25 Output Matching S22 = f ( f ), VCE = 3 V, IC = 4 / 15 / 45 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Noise Figure NFmin = f ( f ), VCE = 3 V, IC = 4 / 15 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 27 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 , f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 27 Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Package Foot Print . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Marking Example (Marking BFP420F: AMs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 5 Revision 1.0, 2011-09-05 BFP420F List of Tables List of Tables Table 1 Table 2 Table 3 Table 4 Table 5 Table 6 Table 7 Table 8 Table 9 Table 10 Table 11 Table 12 Data Sheet Maximum Ratings at TA = 25C (unless otherwise specified). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 DC Characteristics at TA = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 General AC Characteristics at TA = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 AC Characteristics, f = 150 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 AC Characteristics, f = 450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 AC Characteristics, f = 900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 AC Characteristics, f = 1500 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 AC Characteristics, f = 1900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 AC Characteristics, f = 2400 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 AC Characteristics, f = 3500 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 AC Characteristics, f = 5500 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 Revision 1.0, 2011-09-05 Low Noise Silicon Bipolar RF Transistor 1 * * * * * * * * BFP420F Features Low noise high gain silicon bipolar RF transistor Based on Infineons reliable very high volume 25 GHz silicon bipolar technology 0.9 dB minimum noise figure typical at 900 MHz, 3 V, 4 mA 16 dB maximum gain (Gma) typical at 2.4 GHz, 3 V, 15 mA 28 dBm OIP3 typical at 2.4 GHz, 4 V, 40 mA 16.5 dBm OP1dB typical at 2.4 GHz, 4 V, 40 mA Popular in discrete oscillators Thin, small, flat, Pb-free (RoHS compliant) and Hal-free ("green") package with visible leads 3 4 2 1 TSFP-4-1 Applications As Low Noise Amplifier (LNA) in * * * Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) Multimedia applications such as mobile/portable TV, CATV, FM Radio ISM applications like RKE, AMR and Zigbee As discrete active mixer in RF Frontends As active device in discretes oscillators Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Product Name Package BFP420F Data Sheet TSFP-4-1 Pin Configuration 1=B 2=E 3=C 7 Marking 4=E AMs Revision 1.0, 2011-09-05 BFP420F Maximum Ratings 2 Maximum Ratings Table 1 Maximum Ratings at TA = 25C (unless otherwise specified) Parameter Symbol Values Min. Collector emitter voltage Unit Note / Test Condition Max. VCEO Open base - 4.5 V TA = 25C - 4.1 V TA = -55 C Collector base voltage VCBO - 15 V Open emitter Collector emitter voltage VCES - 15 V Emitter / base shortened Emitter base voltage VEBO - 1.5 V Open collector Base current IB 9 mA - Collector current IC - 60 mA - PRFin - - dBm - Ptot - 210 mW TS 100 C TJ - 150 C RF input power Total power dissipation Junction temperature 1) - Storage temperature TStg -55 150 C - 1) TS is the soldering point temperature. TS measured on the emitter lead at the soldering point of the pcb. Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Data Sheet 8 Revision 1.0, 2011-09-05 BFP420F Thermal Characteristics 3 Thermal Characteristics Table 2 Thermal Resistance Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. 1) Junction - soldering point RthJS - 240 - K/W 1) For calculation of RthJA please refer to Application Note Thermal Resistance AN 077 - 260 240 220 200 180 Ptot [mW] 160 140 120 100 80 60 40 20 0 Figure 1 Data Sheet 0 25 50 75 TS [C] 100 125 150 Total Power Dissipation Ptot = f (Ts) 9 Revision 1.0, 2011-09-05 BFP420F Electrical Characteristics 4 Electrical Characteristics 4.1 DC Characteristics Table 3 DC Characteristics at TA = 25 C Parameter Symbol Collector emitter breakdown voltage V(BR)CEO Values Unit Note / Test Condition Min. Typ. Max. 4.5 5.5 - V IC = 1 mA, IB = 0 Open base Collector emitter leakage current ICES - - 10 A VCE = 15 V, VBE = 0 - 1 30 nA VCE = 3 V, VBE = 0 Emitter/base shorted Collector base leakage current ICBO - 1 30 nA VCB = 3 V, IE = 0 Open emitter Emitter base leakage current IEBO - 10 100 nA VEB = 0.5 V, IC = 0 Open collector DC current gain hFE 60 95 VCE = 4 V, IC = 5 mA 130 Pulse measured 4.2 General AC Characteristics Table 4 General AC Characteristics at TA = 25 C Parameter Transition frequency Symbol fT Values Unit Note / Test Condition Min. Typ. Max. 18 25 - GHz VCE = 3 V, IC = 30 mA f = 2 GHz Collector base capacitance CCB - 0.15 0.3 pF VCB = 2 V, VBE = 0 f = 1 MHz Emitter grounded Collector emitter capacitance CCE - 0.46 - pF VCE = 2 V, VBE = 0 f = 1 MHz Base grounded Emitter base capacitance CEB - 0.55 - pF VEB = 0.5 V, VCB = 0 f = 1 MHz Collector grounded Data Sheet 10 Revision 1.0, 2011-09-05 BFP420F Electrical Characteristics 4.3 Frequency Dependent AC Characteristics Measurement setup is a test fixture with Bias T's in a 50 system, TA = 25 C VC Top View Bias -T OUT C E VB B Bias-T E (Pin 1) IN Figure 2 Testing Circuit Table 5 AC Characteristics, f = 150 MHz Parameter Symbol Values Min. Typ. Unit Note / Test Condition dB ZS = ZSoptG, ZL = ZLoptG Max. Maximum power gain @ low noise operating point Gms - 30 - VCE = 3 V, IC = 4 mA @ recommended trade off oper. point Gms - 34.5 - VCE = 3 V, IC = 15 mA @ max. linearity operating point Gms - 37 - VCE = 4 V, IC = 40 mA Transducer gain dB ZS = ZL = 50 @ low noise operating point S21 - 22 - VCE = 3 V, IC = 4 mA @ recommended trade off oper. point S21 - 30 - VCE = 3 V, IC = 15 mA @ max. linearity operating point S21 - 33 - VCE = 4 V, IC = 40 mA Noise figure dB VCE = 3 V, IC = 4 mA @ low noise operating point Minimum noise figure NFmin - 0.9 - Associated gain Gass - 24 - VCE = 3 V, IC = 15 mA @ recommended trade off oper. point Minimum noise figure NFmin - 1.4 - Associated gain Gass - 29 - dBm ZS = ZL = 50 Linearity VCE = 3 V, IC = 15 mA @ recommended trade off oper. point 3rd order intercept point at output OIP3 - 21 - 1 dB gain compression point at output OP1dB - 7 - Data Sheet ZS = ZSoptN 11 Revision 1.0, 2011-09-05 BFP420F Electrical Characteristics Table 5 AC Characteristics, f = 150 MHz (cont'd) Parameter Symbol Values Min. Typ. Unit Max. VCE = 4 V, IC = 40 mA @ max. linearity operating point 3rd order intercept point at output OIP3 - 25 - 1 dB gain compression point at output OP1dB - 15.5 - Table 6 Note / Test Condition AC Characteristics, f = 450 MHz Parameter Symbol Values Min. Typ. Unit Note / Test Condition dB ZS = ZSoptG, ZL = ZLoptG Max. Maximum power gain @ low noise operating point Gms - 25 - VCE = 3 V, IC = 4 mA @ recommended trade off oper. point Gms - 29 - VCE = 3 V, IC = 15 mA @ max. linearity operating point Gms - 31 - VCE = 4 V, IC = 40 mA Transducer gain dB ZS = ZL = 50 @ low noise operating point S21 - 21 - VCE = 3 V, IC = 4 mA @ recommended trade off oper. point S21 - 27 - VCE = 3 V, IC = 15 mA @ max. linearity operating point S21 - 28.5 - VCE = 4 V, IC = 40 mA Noise figure dB VCE = 3 V, IC = 4 mA @ low noise operating point Minimum noise figure NFmin - 0.9 - Associated gain Gass - 22.5 - VCE = 3 V, IC = 15 mA @ recommended trade off oper. point Minimum noise figure NFmin - 1.4 - Associated gain Gass - 27 - dBm ZS = ZL = 50 Linearity VCE = 3 V, IC = 15 mA @ recommended trade off oper. point 3rd order intercept point at output OIP3 - 21.5 - 1 dB gain compression point at output OP1dB - 8 - VCE = 4 V, IC = 40 mA @ max. linearity operating point 3rd order intercept point at output OIP3 - 26.5 - 1 dB gain compression point at output OP1dB - 16.5 - Table 7 ZS = ZSoptN AC Characteristics, f = 900 MHz Parameter Symbol Values Min. Typ. Unit Note / Test Condition dB ZS = ZSoptG, ZL = ZLoptG Max. Maximum power gain @ low noise operating point Gms - 22 - VCE = 3 V, IC = 4 mA @ recommended trade off oper. point Gms - 25 - VCE = 3 V, IC = 15 mA @ max. linearity operating point Gms - 26.5 - VCE = 4 V, IC = 40 mA Data Sheet 12 Revision 1.0, 2011-09-05 BFP420F Electrical Characteristics Table 7 AC Characteristics, f = 900 MHz (cont'd) Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. Transducer gain dB ZS = ZL = 50 @ low noise operating point S21 - 19 - VCE = 3 V, IC = 4 mA @ recommended trade off oper. point S21 - 23 - VCE = 3 V, IC = 15 mA @ max. linearity operating point S21 - 24 - VCE = 4 V, IC = 40 mA Noise figure dB VCE = 3 V, IC = 4 mA @ low noise operating point Minimum noise figure NFmin - 0.95 - Associated gain Gass - 20 - VCE = 3 V, IC = 15 mA @ recommended trade off oper. point Minimum noise figure NFmin - 1.4 - Associated gain Gass - 23 - dBm ZS = ZL = 50 Linearity VCE = 3 V, IC = 15 mA @ recommended trade off oper. point 3rd order intercept point at output OIP3 - 23.5 - 1 dB gain compression point at output OP1dB - 8 - VCE = 4 V, IC = 40 mA @ max. linearity operating point 3rd order intercept point at output OIP3 - 27.5 - 1 dB gain compression point at output OP1dB - 17 - Table 8 ZS = ZSoptN AC Characteristics, f = 1500 MHz Parameter Symbol Values Min. Typ. Unit Note / Test Condition dB ZS = ZSoptG, ZL = ZLoptG Max. Maximum power gain @ low noise operating point Gms - 19 - VCE = 3 V, IC = 4 mA @ recommended trade off oper. point Gms - 22 - VCE = 3 V, IC = 15 mA @ max. linearity operating point Gma - 22 - VCE = 4 V, IC = 40 mA Transducer gain dB ZS = ZL = 50 @ low noise operating point S21 - 16 - VCE = 3 V, IC = 4 mA @ recommended trade off oper. point S21 - 19 - VCE = 3 V, IC = 15 mA @ max. linearity operating point S21 - 19.5 - VCE = 4 V, IC = 40 mA Noise figure dB VCE = 3 V, IC = 4 mA @ low noise operating point Minimum noise figure NFmin - 1 - Associated gain Gass - 16.5 - VCE = 3 V, IC = 15 mA @ recommended trade off oper. point Minimum noise figure NFmin - 1.5 - Associated gain Gass - 19 - Data Sheet ZS = ZSoptN 13 Revision 1.0, 2011-09-05 BFP420F Electrical Characteristics Table 8 AC Characteristics, f = 1500 MHz (cont'd) Parameter Symbol Values Min. Typ. Unit Max. dBm ZS = ZL = 50 Linearity VCE = 3 V, IC = 15 mA @ recommended trade off oper. point 3rd order intercept point at output OIP3 - 22.5 - 1 dB gain compression point at output OP1dB - 7 - VCE = 4 V, IC = 40 mA @ max. linearity operating point 3rd order intercept point at output OIP3 - 27.5 - 1 dB gain compression point at output OP1dB - 16 - Table 9 Note / Test Condition AC Characteristics, f = 1900 MHz Parameter Symbol Values Min. Typ. Unit Note / Test Condition dB ZS = ZSoptG, ZL = ZLoptG Max. Maximum power gain @ low noise operating point Gms - 18 - VCE = 3 V, IC = 4 mA @ recommended trade off oper. point Gma - 19.5 - VCE = 3 V, IC = 15 mA @ max. linearity operating point Gma - 19 - VCE = 4 V, IC = 40 mA Transducer gain dB ZS = ZL = 50 @ low noise operating point S21 - 14 - VCE = 3 V, IC = 4 mA @ recommended trade off oper. point S21 - 16.5 - VCE = 3 V, IC = 15 mA @ max. linearity operating point S21 - 17 - VCE = 4 V, IC = 40 mA Noise figure dB VCE = 3 V, IC = 4 mA @ low noise operating point Minimum noise figure NFmin - 1.1 - Associated gain Gass - 15 - VCE = 3 V, IC = 15 mA @ recommended trade off oper. point Minimum noise figure NFmin - 1.5 - Associated gain Gass - 17 - dBm ZS = ZL = 50 Linearity VCE = 3 V, IC = 15 mA @ recommended trade off oper. point 3rd order intercept point at output OIP3 - 24 - 1 dB gain compression point at output OP1dB - 9 - VCE = 4 V, IC = 40 mA @ max. linearity operating point 3rd order intercept point at output OIP3 - 28 - 1 dB gain compression point at output OP1dB - 17 - Data Sheet ZS = ZSoptN 14 Revision 1.0, 2011-09-05 BFP420F Electrical Characteristics Table 10 AC Characteristics, f = 2400 MHz Parameter Symbol Values Min. Typ. Unit Note / Test Condition dB ZS = ZSoptG, ZL = ZLoptG Max. Maximum power gain @ low noise operating point Gms - 16.5 - VCE = 3 V, IC = 4 mA @ recommended trade off oper. point Gma - 16.5 - VCE = 3 V, IC = 15 mA @ max. linearity operating point Gma - 16.5 - VCE = 4 V, IC = 40 mA Transducer gain dB ZS = ZL = 50 @ low noise operating point S21 - 12 - VCE = 3 V, IC = 4 mA @ recommended trade off oper. point S21 - 14.5 - VCE = 3 V, IC = 15 mA @ max. linearity operating point S21 - 15 - VCE = 4 V, IC = 40 mA Noise figure dB VCE = 3 V, IC = 4 mA @ low noise operating point Minimum noise figure NFmin - 1.2 - Associated gain Gass - 12.5 - VCE = 3 V, IC = 15 mA @ recommended trade off oper. point Minimum noise figure NFmin - 1.6 - Associated gain Gass - 15 - dBm ZS = ZL = 50 Linearity VCE = 3 V, IC = 15 mA @ recommended trade off oper. point 3rd order intercept point at output OIP3 - 24.5 - 1 dB gain compression point at output OP1dB - 8.5 - VCE = 4 V, IC = 40 mA @ max. linearity operating point 3rd order intercept point at output OIP3 - 28 - 1 dB gain compression point at output OP1dB - 16.5 - Table 11 ZS = ZSoptN AC Characteristics, f = 3500 MHz Parameter Symbol Values Min. Typ. Unit Note / Test Condition dB ZS = ZSoptG, ZL = ZLoptG Max. Maximum power gain @ low noise operating point Gma - 11.5 - VCE = 3 V, IC = 4 mA @ recommended trade off oper. point Gma - 12.5 - VCE = 3 V, IC = 15 mA @ max. linearity operating point Gma - 13 - VCE = 4 V, IC = 40 mA Transducer gain dB ZS = ZL = 50 @ low noise operating point S21 - 9 - VCE = 3 V, IC = 4 mA @ recommended trade off oper. point S21 - 11 - VCE = 3 V, IC = 15 mA @ max. linearity operating point S21 - 11.5 - VCE = 4 V, IC = 40 mA Noise figure dB VCE = 3 V, IC = 4 mA @ low noise operating point Minimum noise figure Data Sheet ZS = ZSoptN NFmin - 15 1.6 - Revision 1.0, 2011-09-05 BFP420F Electrical Characteristics Table 11 AC Characteristics, f = 3500 MHz (cont'd) Parameter Symbol Associated gain Gass Values Unit Min. Typ. Max. - 10 - VCE = 3 V, IC = 15 mA @ recommended trade off oper. point Minimum noise figure NFmin - 1.8 - Associated gain Gass - 11.5 - dBm ZS = ZL = 50 Linearity VCE = 3 V, IC = 15 mA @ recommended trade off oper. point 3rd order intercept point at output OIP3 - 22 - 1 dB gain compression point at output OP1dB - 8 - VCE = 4 V, IC = 40 mA @ max. linearity operating point 3rd order intercept point at output OIP3 - 26 - 1 dB gain compression point at output OP1dB - 17 - Table 12 Note / Test Condition AC Characteristics, f = 5500 MHz Parameter Symbol Values Min. Typ. Unit Note / Test Condition dB ZS = ZSoptG, ZL = ZLoptG Max. Maximum power gain @ low noise operating point Gma - 7.5 - VCE = 3 V, IC = 4 mA @ recommended trade off oper. point Gma - 8.5 - VCE = 3 V, IC = 15 mA @ max. linearity operating point Gma - 9 - VCE = 4 V, IC = 40 mA Transducer gain dB ZS = ZL = 50 @ low noise operating point S21 - 5.5 - VCE = 3 V, IC = 4 mA @ recommended trade off oper. point S21 - 7 - VCE = 3 V, IC = 15 mA @ max. linearity operating point S21 - 8 - VCE = 4 V, IC = 40 mA Noise figure dB VCE = 3 V, IC = 4 mA @ low noise operating point Minimum noise figure NFmin - 2.2 - Associated gain Gass - 5 - VCE = 3 V, IC = 15 mA @ recommended trade off oper. point Minimum noise figure NFmin - 2.3 - Associated gain Gass - 8 - dBm ZS = ZL = 50 Linearity VCE = 3 V, IC = 15 mA @ recommended trade off oper. point 3rd order intercept point at output OIP3 - 22 - 1 dB gain compression point at output OP1dB - 8.5 - VCE = 4 V, IC = 40 mA @ max. linearity operating point 3rd order intercept point at output OIP3 - 26 - 1 dB gain compression point at output OP1dB - 17 - Data Sheet ZS = ZSoptN 16 Revision 1.0, 2011-09-05 BFP420F Electrical Characteristics Note: 1. Gms = IS21 / S12I for k < 1; Gma = IS21 / S12I(k-(k2-1)1/2) for k > 1 2. In order to get the NFmin values stated in this chapter the test fixture losses have been subtracted from all measured results. 3. OIP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.2 MHz to 12 GHz. Data Sheet 17 Revision 1.0, 2011-09-05 BFP420F Electrical Characteristics 4.4 Characteristic DC Diagrams 65 I = 725A B I = 675A B I = 625A B I = 575A B IB = 525A I = 475A B I = 425A B I = 375A B IB = 325A IB = 275A I = 225A 60 55 50 45 IC [mA] 40 35 30 25 B 20 IB = 175A 15 IB = 125A 10 I = 75A B 5 0 Figure 3 IB = 25A 0 1 2 3 VCE [V] 4 5 6 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter 2 h FE 10 1 10 -1 10 0 1 10 10 2 10 IC [mA] Figure 4 Data Sheet DC Current Gain hFE = f (IC), VCE = 3 V 18 Revision 1.0, 2011-09-05 BFP420F Electrical Characteristics 2 10 1 10 0 10 IC [mA] -1 10 -2 10 -3 10 -4 10 -5 10 0.5 0.6 0.7 0.8 0.9 1 VBE [V] Figure 5 Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 3 V 0 10 -1 10 -2 10 IB [mA] -3 10 -4 10 -5 10 -6 10 -7 10 0.5 0.6 0.7 0.8 0.9 1 VBE [V] Figure 6 Data Sheet Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 3 V 19 Revision 1.0, 2011-09-05 BFP420F Electrical Characteristics -6 10 -7 10 -8 IB [A] 10 -9 10 -10 10 -11 10 Figure 7 0.3 0.5 0.7 0.9 VEB [V] 1.1 1.3 1.5 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 3 V 8 C 7.5 B E 7 6.5 V CER [V] RBE 6 5.5 5 4 10 5 6 10 10 R BE Figure 8 Data Sheet 7 10 [] Collector Emitter Breakdown Voltage VCER = f (RBE), IC = 1 mA 20 Revision 1.0, 2011-09-05 BFP420F Electrical Characteristics 4.5 Characteristic AC Diagrams 28 26 4.00V 3.00V 24 22 2.00V 20 fT [GHz] 18 16 14 1.00V 12 10 8 6 4 2 0 3 Figure 10 Data Sheet 10 20 30 40 IC [mA] 50 60 70 Transition Frequency fT = f (IC), f = 2 GHz, VCE = Parameter OIP [dBm] Figure 9 0 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 3V, 900MHz 4V, 900MHz 3V, 1900MHz 4V, 1900MHz 0 10 20 30 IC [mA] 40 50 60 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 , VCE, f = Parameters 21 Revision 1.0, 2011-09-05 BFP420F Electrical Characteristics 18 24 22 23 17 50 21 55 25 20 1415 19 16 60 25 26 24 28 23 35 30 27 17 25 26 20 22 20 10 1 18 7 1 22 21 20 2 25 24 23 21 20 2.5 VCE [V] 3 24 23 22 3.5 4 14 8 4 6 35 30 15 14 13 20 10 2 1 5 0 1 6 4 5 10 7 3 1.5 12 9 8 2 1 0 2 13 12 11 9 7 10 15 14 25 15 17 16 8 5 IC [mA] 40 7 9 10 11 12 13 45 15 3 50 16 12 9 10 6 4 5 13 3rd Order Intercept Point at output OIP3 [dBm] = f (IC, VCE), ZS = ZL= 50 , f = 1900 MHz 55 Data Sheet 26 23 1.5 60 Figure 12 27 25 19 7 Figure 11 24 21 19 15 5 28 27 25 IC [mA] 40 22 2 1 14 13 12 15 18 16 20 19 45 27 26 4 6 5 8 11 10 9 8 7 3 2.5 VCE [V] 2 1 0 3 4 6 5 3 3.5 11 7 2 1 0 4 Compression Point at output OP1dB [dBm] = f (IC, VCE), ZS = ZL= 50 , f = 1900 MHz 22 Revision 1.0, 2011-09-05 BFP420F Electrical Characteristics 0.3 CCB [pF] 0.24 0.18 0.12 0.06 0 Figure 13 0 0.5 1 1.5 2 VCB [V] 2.5 3 3.5 4 Collector Base Capacitance CCB = f (VCB), f = 1 MHz 40 35 30 G ms G [dB] 25 20 Gma 15 2 |S21| 10 5 0 Figure 14 Data Sheet 0 1 2 3 f [GHz] 4 5 6 Gain Gma, Gms, IS21I = f (f), VCE = 3 V, IC = 15 mA 23 Revision 1.0, 2011-09-05 BFP420F Electrical Characteristics 39 0.15GHz 36 33 0.45GHz 30 G [dB] 27 0.90GHz 24 21 1.50GHz 18 1.90GHz 2.40GHz 15 12 3.50GHz 9 5.50GHz 6 3 Figure 15 0 10 20 30 40 I [mA] C 50 60 70 80 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz 39 36 0.15GHz 33 30 0.45GHz G [dB] 27 0.90GHz 24 1.50GHz 1.90GHz 21 18 2.40GHz 15 3.50GHz 12 9 5.50GHz 6 3 Figure 16 Data Sheet 0 1 2 3 VCE [V] 4 5 6 Maximum Power Gain Gmax = f (VCE), IC = 15 mA, f = Parameter in GHz 24 Revision 1.0, 2011-09-05 BFP420F Electrical Characteristics 1 1.5 0.5 2 0.4 3 0.3 4 0.2 5 0.03 to 6 GHz 0.1 10 step: 1 GHz 4 mA 0.1 0 0.2 0.3 0.4 0.5 1 1.5 2 3 4 5 15 mA 40 mA -0.1 -10 -0.2 -5 -4 -0.3 -3 -0.4 -0.5 -2 -1.5 -1 Figure 17 Input Matching S11 = f ( f ), VCE = 3 V, IC = 4 / 15 / 45 mA 1 1.5 0.5 2 0.4 3 0.3 2.4GHz 4 3.5GHz 0.2 5 1.9GHz 0.9GHz 0.1 10 0.45GHz 0.1 0 0.2 0.3 0.4 0.5 1 1.5 2 3 4 5 I = 4.0mA c -0.1 -10 Ic = 15mA -0.2 -5 -4 -0.3 -3 -0.4 -0.5 -2 -1.5 -1 Figure 18 Data Sheet Source Impedance for Minimum Noise Figure Zopt = f ( f ) , VCE = 3 V, IC = 4 / 15 mA 25 Revision 1.0, 2011-09-05 BFP420F Electrical Characteristics 1 1.5 0.5 2 0.4 3 0.3 4 0.2 5 0.03 to 6 GHz 0.1 10 step: 1 GHz 4 mA 0.1 0 0.2 0.3 0.4 0.5 1 1.5 2 3 4 5 15 mA 40 mA -0.1 -10 -0.2 -5 -4 -0.3 -3 -0.4 -0.5 -2 -1.5 -1 Figure 19 Output Matching S22 = f ( f ), VCE = 3 V, IC = 4 / 15 / 45 mA 2 1.8 1.6 NFmin [dB] 1.4 1.2 1 0.8 IC = 16mA 0.6 IC = 4mA 0.4 0.2 0 Figure 20 Data Sheet 0 0.5 1 1.5 2 f [GHz] 2.5 3 3.5 4 Noise Figure NFmin = f ( f ), VCE = 3 V, IC = 4 / 15 mA, ZS = Zopt 26 Revision 1.0, 2011-09-05 BFP420F Electrical Characteristics 2.6 2.4 2.2 2 NFmin [dB] 1.8 1.6 1.4 f = 3.5GHz 1.2 f = 2.4GHz 1 0.8 f = 0.9GHz 0.6 f = 0.45GHz 0.4 Figure 21 f = 1.9GHz 0 5 10 15 20 Ic [mA] 25 30 35 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz 3.4 3.2 3 2.8 2.6 NF50 [dB] 2.4 2.2 2 1.8 1.6 f = 3.5GHz 1.4 f = 2.4GHz 1.2 f = 1.9GHz 1 f = 0.9GHz 0.8 0.6 Figure 22 f = 0.45GHz 0 5 10 15 20 Ic [mA] 25 30 35 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 , f = Parameter in GHz Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. TA = 25 C. Data Sheet 27 Revision 1.0, 2011-09-05 BFP420F Simulation Data 5 Simulation Data For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please consult our website and download the latest versions before actually starting your design. You find the BFP420F SPICE GP model on the official homepage of Infineon RF transistors in MWO- and ADSformat, which you can import into these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is ready to use for DC- and high frequency simulations. The terminals of the model circuit correspond to the pin configuration of the device. The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFP420F SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted. Data Sheet 28 Revision 1.0, 2011-09-05 BFP420F Package Information TSFP-4 6 Package Information TSFP-4 0.2 0.05 3 1 1.2 0.05 0.2 0.05 4 0.55 0.04 2 0.2 0.05 0.8 0.05 1.4 0.05 0.15 0.05 0.5 0.05 0.5 0.05 Figure 23 TSFP-4-1, -2-PO V04 Package Outline 0.9 0.45 0.35 0.5 0.5 TSFP-4-1, -2-FP V04 Figure 24 Package Foot Print Manufacturer XYs Marking Pin 1 Figure 25 Marking Example (Marking BFP420F: AMs) 0.2 Pin 1 8 1.4 4 0.7 1.55 TSFP-4-1, -2-TP V05 Figure 26 Data Sheet Tape Dimensions 29 Revision 1.0, 2011-09-05 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG