VISHAY
TLUR640.
Document Number 83171
Rev. 1.7, 31-Aug-04
Vishay Semiconductors
www.vishay.com
1
19224
e2 Pb
Pb-free
Universal LED in ∅ 5 mm Tinted Diffused Package
Features
• For DC and pulse operation
• Luminous intensity categorized
• Standard ∅ 5 mm (T-1¾) package
• TLUR64.. without stand-offs
• Lead-free device
Applications
General indicating and lighting purposes
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
TLUR64..
Part Color, Luminous Intensity Angle of Half Intensity (±ϕ)Technology
TLUR6400 Red, IV > 4 mcd 30 ° GaAsP on GaAs
TLUR6401 Red, IV = (4 to 32) mcd 30 ° GaAsP on GaAs
Parameter Test condition Symbol Value Unit
Reverse voltage VR6V
DC Forward current IF20 mA
Surge forward current tp ≤ 10 µsI
FSM 1A
Power dissipation Tamb ≤ 65 °C PV60 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 40 to + 100 °C
Storage temperature range Tstg - 55 to + 100 °C
Soldering temperature t ≤ 5 s, 2 mm from body Tsd 260 °C
Thermal resistance junction/
ambient
RthJA 500 K/W
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Document Number 83171
Rev. 1.7, 31-Aug-04
VISHAY
TLUR640.
Vishay Semiconductors
Optical and Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Red
TLUR64..
1) in one Packing Unit IVmin/IVmax ≤ 0.5
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Parameter Test condition Part Symbol Min Typ. Max Unit
Luminous intensity 1) IF = 10 mA TLUR6400 IV415 mcd
TLUR6401 IV41532mcd
Dominant wavelength IF = 10 mA λd630 nm
Peak wavelength IF = 10 mA λp640 nm
Angle of half intensity IF = 10 mA ϕ± 30 deg
Forward voltage IF = 20 mA VF23V
Reverse voltage IR = 10 µAV
R615 V
Junction capacitance VR = 0, f = 1 MHz Cj50 pF
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 2. Forward Current vs. Ambient Temperature
0
20
40
60
80
100
0 20406080100
T
amb
– Ambient Temperature ( qC )
17516
P –Power Dissipation (mW)
V
0
5
10
15
20
25
30
35
40
0 102030405060708090100
T
amb
– Ambient Temperature ( qC )
17515
I –Forward Current ( mA )
F
Figure 3. Pulse Forward Current vs. Pulse Duration
Figure 4. Rel. Luminous Intensity vs. Angular Displacement
0.01 0.1 1 10
1
10
100
1000
10000
tp- Pulse Length ( ms )
100
95 9985
I - Forward Current ( mA )
F
DC
tp/T = 0.005
0.5
0.2
0.1
0.01
0.05
0.02
Tamb <60°C
0.4 0.2 0 0.2 0.4 0.6
95 10042
0.6
0.9
0.8
0°°°
30°
10 20
40°
50°
60°
70°
80°
0.7
1.0
I - Relative Luminous Intensity
Vrel
VISHAY
TLUR640.
Document Number 83171
Rev. 1.7, 31-Aug-04
Vishay Semiconductors
www.vishay.com
3
Figure 5. Forward Current vs. Forward Voltage
Figure 6. Rel. Luminous Intensity vs. Ambient Temperature
Figure 7. Relative Luminous Intensity vs. Forward Current
0.1
1
10
100
012345
V
F
- Forward Voltage(V)
16634
F
I - Forward Current ( mA )
Red
0
0.4
0.8
1.2
1.6
95 10074
I - Relative Luminous Intensity
v rel
IF=10mA
Tamb - Ambient Temperature ( °C)
20 40 60 800 100
Red
I
F
- Forward Current ( mA )
100
0.01
0.1
1
10
95 10076
I - Relative Luminous Intensity
v rel
101
Figure 8. Relative Intensity vs. Wavelength
0.0
0.2
0.4
0.6
0.8
1.0
1.2
550 590 630 670 710 750
17521
l – Wavelength ( nm )
Red
I – Relative Intensity
rel
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Document Number 83171
Rev. 1.7, 31-Aug-04
VISHAY
TLUR640.
Vishay Semiconductors
Package Dimensions in mm
95 10917
VISHAY
TLUR640.
Document Number 83171
Rev. 1.7, 31-Aug-04
Vishay Semiconductors
www.vishay.com
5
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
