©2004 Fairchild Semiconductor Corporation Rev. A, June 2004
TIS75
TO-92
Absolute Maximum Ratings *
T
a
=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 3.0%
Symbol Parameter Value Units
V
DG
Drain-Gate Voltage 30 V
V
GS
Gate-So urce Voltage -30 V
I
GF
Forward Gate Current 10 mA
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 ~ +150 °C
Symbol Parame ter Test Condition Min. Typ. Max. Units
Off Characteristi cs
V
(BR)GSS
Gate-Source Breakdown Voltage I
G
= 1.0µA, V
DS
= 0 -30 V
I
GSS
Gate Reverse Current V
GS
= 15V, V
DS
= 0
V
GS
= 15V, V
DS
= 0, T
a
= 100°C-2.0
-5.0 nA
µA
I
D
(off) Drain Cutoff Leakage Current V
DS
= 15V, V
GS
= -10V
V
DS
= 15V, V
GS
= -10V,
T
a
= 100°C
-2.0
-5.0 nA
µA
V
GS
(off ) Gate-Source Cutoff Volt age V
DS
= 20V, I
D
= 4.0nA -0.8 -4.0 V
On Characteristics *
I
DSS
Zero-Gate Voltage Drain Current * V
DS
= 15V, V
GS
= 0 8 80 mA
r
DS
(on) Drain-Source On Resistance V
DS
≤ 0.1V, V
GS
= 0 60 Ω
Small Signa l C h ar ac t e ris t ic s
C
iss
Input Capacitance V
DS
= 0, V
GS
= -10V, f = 1.0MHz 18 pF
C
rss
Reverse Transfer Capacitance V
DS
= 0, V
GS
= -10V, f = 1.0MHz 8.0 pF
Switching Charact eristics
t
r
Rise T ime V
GS
(off) = -4.0V, V
GS
(on) = 0,
I
D
= 5.0mA , V
DS
= 10V 10 ns
t
on
Turn-On Time 10 ns
t
off
T urn-Off T i me 100 ns
TIS75
N-Channel General Purpose Amplifier
• This device is designed for low level analog switching, sample and
hold circuits and chopper stabilized amplifiers.
• Sourced from process 54.
1. Gate 2. Source 3. Drain
1
©2004 Fairchild Semiconductor Corporation Rev. A, June 2004
TIS75
Thermal Charac t eris ti cs
T
a
=25°C unless otherwise noted
Symbol Parameter Max. Units
P
D
Total Device Dissipation
Derate above 25
°
C350
2.8 mW
mW/
°
C
R
θJC
Thermal Resistance, Junction to Case 125
°
C/W
R
θJA
Thermal Resistance, Junction to Ambient 357
°
C/W
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
Package Dimensions
TIS75
Dimensions in Millimeters
Rev. A, June 2004©2004 Fairchild Semiconductor Corporation
©2004 Fairchild Semiconductor Corporation Rev. I11
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