DATA SH EET
Product specification
Supersedes data of September 1995 1998 Aug 27
DISCRETE SEMICONDUCTORS
BFQ67
NPN 8 GHz wideband transistor
book, halfpage
M3D088
1998 Aug 27 2
NXP Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability.
APPLICATIONS
Satellite TV tuners and RF portable
communications equipment up to
2GHz.
DESCRIPTION
Silicon NPN wideband transistor in a
plastic SOT23 package.
PINNING
PIN DESCRIPTION
1base
2 emitter
3 collector
Fig.1 SOT23.
alfpage
MSB003
Top view
12
3
Marking code: V2p.
QUICK REFERENCE DATA
Note
1. Ts is the temperature at the sold ering point of the collector tab.
LIMITING VALUES
In accordance with the Absolute Maximum Ra ting System (I EC 134).
Note
1. Ts is the temperature at the sold ering point of the collector tab.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base vo ltage open emitter 20 V
VCEO collector-emitter voltage open base 10 V
ICcollector current (DC) 50 mA
Ptot total power dissipation Ts97 C; note 1 300 mW
hFE DC current gain IC=15mA; V
CE =5V 60 100
fTtransition frequency IC=15mA; V
CE =8V 8GHz
GUM maximum unilateral
power gain IC=15mA; V
CE =8V; f=1GHz 14 dB
F noise figure IC=5mA; V
CE =8V; f=1GHz 1.3 dB
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCEO collector-emitter voltage open base 10 V
VEBO emitter-base voltage open collector 2.5 V
ICcollector current (DC) 50 mA
Ptot total power dissipation Ts97 C; note 1 300 mW
Tstg storage temperature range 65 +150 C
Tjjunction temperature 175 C
1998 Aug 27 3
NXP Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67
THERMAL CHARACTE RISTI CS
Note
1. Ts is the temperature at the soldering point of the collecto r lead.
CHARACTERISTICS
Tj=25C unless otherwise specified.
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and .
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from junction to soldering point note 1 260 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collecto r cut-off current IE=0; V
CB =5V 50 nA
hFE DC current ga in IC=15mA; V
CE =5V 60 100
Cccollector capacitance IE=i
e=0; V
CB =8V; f=1MHz 0.7 pF
Ceemitter capacitance IC=i
c=0; V
EB =0.5V; f=1MHz 1.3 pF
Cre feedback capacitance IC=0; V
CB =8V; f=1MHz 0.5 pF
fTtransition fr eq uency IC=15mA; V
CE =8V 8GHz
GUM maximum unilater al power gain
(note 1) IC=15mA; V
CE =8V;
Tamb =25C; f = 1 GHz 14 dB
IC=15mA; V
CE =8V; f=2GHz 8dB
F noise figure s=opt; IC=5mA; V
CE =8V;
Tamb =25C; f = 1 GHz 1.3 dB
s=opt; IC=15mA; V
CE =8V;
Tamb =25C; f = 1 GHz 1.7 dB
s=opt; IC=5mA; V
CE =8V;
Tamb =25C; f = 2 GHz 2.2 dB
IC=5mA; V
CE =8V;
Tamb =25C; f = 2 GHz; Zs=60
2.5 dB
s=opt; IC=15mA; V
CE =8V;
Tamb =25C; f = 2 GHz 2.7 dB
IC=15mA; V
CE =8V;
Tamb =25C; f = 2 GHz; Zs=60
3dB
GUM 10 log S21 2
1S11 2
–1S22 2
–
---------------------------------------------------------- dB=
1998 Aug 27 4
NXP Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67
Fig.2 Power derating curve.
handbook, halfpage
0 50 100 200
400
300
100
0
200
150
MRA614
Ptot
(mW)
Ts (oC)
Fig.3 DC current gain as a fu nc tion of collector
current, ty pical values.
VCE =5V.
handbook, halfpage
0
120
80
40
020 40
MBB301
60
I (mA)
C
FE
h
Fig.4 Feedback capacitance as a function of
collector-base voltage, typical valu es.
IC=i
c=0; f=1MHz.
handbook, halfpage
0 5 10 15
VCB (V)
Cre
(pF)
0.8
0.6
0.2
0
0.4
MRA607
Fig.5 Transition frequency as a function of
collector current, typical values.
VCE =8V; T
amb =25C; f = 2 GHz.
handbook, halfpage
01020 40
8
6
2
0
4
MBB303
30 I (mA)
C
(GHz)
T
f10
1998 Aug 27 5
NXP Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67
Fig.6 Gain as a function o f c ollec t or current,
typical values.
VCE =8 V; f=1GHz.
handbook, halfpage
010 IC (mA)
20 30
25
0
20
15
gain
(dB)
10
5
MRA611
MSG
GUM
Gmax
Fig.7 Gain as a function o f freq uency, typical
values.
VCE =8V; I
C=5mA.
handbook, halfpage
50
gain
(dB)
010
MRA610
102103104
10
20
30
f (MHz)
40
MSG
GUM
Gmax
Fig.8 Gain as a function o f freq uency, typical
values.
VCE =8V; I
C=15mA.
handbook, halfpage
50
gain
(dB)
010
MRA608
102103104
10
20
30
f (MHz)
40
Gmax
GUM
MSG
Fig.9 Gain as a function o f freq uency, typical
values.
VCE =8V; I
C=30mA.
handbook, halfpage
50
gain
(dB)
010
MRA609
102103104
10
20
30
f (MHz)
40
Gmax
GUM
MSG
1998 Aug 27 6
NXP Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67
Fig.10 Minimum noise figure as a function of
collector current, typical values.
VCE =8V.
handbook, halfpage
4
2
1
0100
MBB308
101
3
F
(dB)
I (mA)
C
f = 2 GHz
1 GHz
900 MHz
500 MHz
Fig.11 Noise figure as a function of collector
current, ty pical values.
VCE =6V; f=900MHz.
handbook, halfpage
5
0
1
2
3
F
(dB)
IC (mA)
4
MRA613
1102
10
optimum
source
ZS = 60 Ω
Fig.12 Minimum noise figure as a function of
frequency, typical values.
VCE =8V.
handbook, halfpage
4
2
1
0
MBB309
3
F
(dB)
f (MHz) 104
103
102
5 mA
I = 30 mA
C
15 mA
Fig.13 Minimum noise figure as a function of
frequency, typical values.
VCE =1V.
handbook, halfpage
5
0
1
2
3
F
(dB)
f (MHz)
4
MRA612
10
2
10
4
10
3
IC = 0.5 mA
1 mA
2 mA
1998 Aug 27 7
NXP Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67
handbook, full pagewidth
MBC968
0.2
0.5
1
2
5
10
∞
0.2
0.5
1
2
5
10
0
+ j
− j
3 GHz
40 MHz
10.2 5210
Fig.14 Common emitter input reflection coefficient (S11), typical values.
VCE =8V; I
C=15mA; Z
o=50.
Fig.15 Common emitter forward transmission coeffici ent (S21), typical values.
VCE =8V; I
C=15mA.
handbook, full pagewidth
MBC967
+ ϕ
− ϕ
0°
30°
60°
90°
120°
150°
180°
150°
120°
90°
60°
30°
0.2 0.1 3 GHz
40 MHz
1998 Aug 27 8
NXP Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67
Fig.16 Common emitter reverse transmission coefficient (S 12), typical values.
VCE =8V; I
C=15mA.
handbook, full pagewidth
MBC966
+ ϕ
− ϕ
0°
30o
60°
90°
120°
150°
180°
150°
120°
90°
60°
30°
0.2 0.1
3 GHz
40 MHz
Fig.17 Common emitter output reflection coefficient (S22), typical values.
VCE =8V; I
C=15mA; Z
o=50.
handbook, full pagewidth
MBC965
0.2
0.5
1
2
5
10
∞
0.2
0.5
1
2
5
10
0
+ j
− j 3 GHz
0.2 0.5 1 1052
40 MHz
1998 Aug 27 9
NXP Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67
PACKAGE OUTLINE
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT23
1998 Aug 27 10
NXP Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completin g a d esign.
2. The product status of device(s) described in this documen t may have changed since this document wa s published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
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provided in a Product data she et shall define the
specification of the product as agreed between NXP
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Semiconductors and cus to mer have explicitly agreed
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those described in the Product data sheet.
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1998 Aug 27 11
NXP Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67
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to any default, damage, cost s or problem which is based
on any weakness or default in the customer’s applications
or products, or the applic ation or use by customer’s third
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respect.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ra tings only and
(proper) operat ion of the device at these or any other
conditions above those given in the Recommende d
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
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Printed in The Netherlands R77/04/pp12 Date of release: 1998 Aug 27
