Philips Semiconductors
SA605
High performance low power mixer FM IF
system
Product specification
Replaces data of November 3, 1992 1997 Nov 07
RF COMMUNICATIONS PRODUCTS
RF Communications Handbook
Philips Semiconductors Product specification
SA605High performance low power mixer FM IF system
2
1997 Nov 07 853-1401 18663
DESCRIPTION
The SA605 is a high performance monolithic low-power FM IF
system incorporating a mixer/oscillator, two limiting intermediate
frequency amplifiers, quadrature detector, muting, logarithmic
received signal strength indicator (RSSI), and voltage regulator. The
SA605 combines the functions of Signetics’ SA602 and SA604A, but
features a higher mixer input intercept point, higher IF bandwidth
(25MHz) and temperature compensated RSSI and limiters
permitting higher performance application. The SA605 is available
in 20-lead dual-in-line plastic, 20-lead SOL (surface-mounted
miniature package) and 20-lead SSOP (shrink small outline
package).
The SA605 and SA615 are functionally the same device types. The
difference between the two devices lies in the guaranteed
specifications. The SA615 has a higher ICC, lower input third order
intercept point, lower conversion mixer gain, lower limiter gain, lower
AM rejection, lower SINAD, higher THD, and higher RSSI error than
the SA605. Both the SA605 and SA615 devices will meet the EIA
specifications for AMPS and TACS cellular radio applications.
For additional technical information please refer to application notes
AN1994, 1995 and 1996, which include example application
diagrams, a complete overview of the product, and artwork for
reference.
APPLICATIONS
•Cellular radio FM IF
•High performance communications receivers
•Single conversion VHF/UHF receivers
•SCA receivers
•RF level meter
•Spectrum analyzer
•Instrumentation
•FSK and ASK data receivers
•Log amps
•Wideband low current amplification
PIN CONFIGURATION
RFIN 1
RF BYPASS 2
XTAL OSC 3
XTAL OSC 4
MUTEIN 5
RSSIOUT 7
20 MIXER OUT
19
18 IF AMP IN
17
16 IF AMP OUT
15 GND
14 LIMITER IN
13
12
11 LIMITER OUT
VCC 6
MUTED AUDIO OUT 8
UNMUTED AUDIO OUT 9
QUADRATURE IN 10
IF AMP DECOUPLING
IF AMP DECOUPLING
LIMITER DECOUPLING
LIMITER DECOUPLING
N, D and DK Packages
SR00335
Figure 1. Pin Configuration
FEATURES
•Low power consumption: 5.7mA typical at 6V
•Mixer input to >500MHz
•Mixer conversion power gain of 13dB at 45MHz
•Mixer noise figure of 4.6dB at 45MHz
•XTAL oscillator effective to 150MHz (L.C. oscillator to 1GHz local
oscillator can be injected)
•102dB of IF Amp/Limiter gain
•25MHz limiter small signal bandwidth
•Temperature compensated logarithmic Received Signal Strength
Indicator (RSSI) with a dynamic range in excess of 90dB
•Two audio outputs - muted and unmuted
•Low external component count; suitable for crystal/ceramic/LC
filters
•Excellent sensitivity: 0.22µV into 50Ω matching network for 12dB
SINAD (Signal to Noise and Distortion ratio) for 1kHz tone with RF
at 45MHz and IF at 455kHz
•SA605 meets cellular radio specifications
•ESD hardened
ORDERING INFORMATION
DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #
20-Pin Plastic Dual In-Line Package (DIP) –40 to +85°C SA605N SOT146-1
20-Pin Plastic Small Outline Large (SOL) package –40 to +85°C SA605D SOT163-1
20-Pin Plastic Shrink Small Outline Package (SSOP) –40 to +85°C SA605DK SOT266-1
Philips Semiconductors Product specification
SA605High performance low power mixer FM IF system
1997 Nov 07 3
BLOCK DIAGRAM
20 19 18 17 16 15 14 13 12 11
10987654321
RSSI
OSCILLATOR
IF
AMP LIMITER
EB
SR00336
Figure 2. Block Diagram
ABSOLUTE MAXIMUM RATINGS
SYMBOL PARAMETER RATING UNITS
VCC Single supply voltage 9 V
TSTG Storage temperature range -65 to +150 °C
TAOperating ambient temperature range SA605 –40 to +85 °C
θJA Thermal impedance D package
N package
SSOP package
90
75
117 °C/W
DC ELECTRICAL CHARACTERISTICS
VCC = +6V, TA = 25°C; unless otherwise stated.
LIMITS
SYMBOL PARAMETER TEST CONDITIONS SA605 UNITS
MIN TYP MAX
VCC Power supply voltage range 4.5 8.0 V
ICC DC current drain 4.55 5.7 6.55 mA
Mute switch input threshold
(ON) 1.7 V
(OFF) 1.0 V
Philips Semiconductors Product specification
SA605High performance low power mixer FM IF system
1997 Nov 07 4
AC ELECTRICAL CHARACTERISTICS
TA = 25°C; VCC = +6V, unless otherwise stated. RF frequency = 45MHz + 14.5dBV RF input step-up; IF frequency = 455kHz; R17 = 5.1k; RF
level = -45dBm; FM modulation = 1kHz with ±8kHz peak deviation. Audio output with C-message weighted filter and de-emphasis capacitor.
Test circuit Figure 3. The parameters listed below are tested using automatic test equipment to assure consistent electrical characterristics.
The limits do not represent the ultimate performance limits of the device. Use of an optimized RF layout will improve many of the listed
parameters. LIMITS
SYMBOL PARAMETER TEST CONDITIONS SA605 UNITS
MIN TYP MAX
Mixer/Osc section (ext LO = 300mV)
fIN Input signal frequency 500 MHz
fOSC Crystal oscillator frequency 150 MHz
Noise figure at 45MHz 5.0 dB
Third-order input intercept point f1 = 45.0; f2 = 45.06MHz -10 dBm
Conversion power gain Matched 14.5dBV step-up 10 13 15 dB
50Ω source -1.7 dB
RF input resistance Single-ended input 3.0 4.7 kΩ
RF input capacitance 3.5 4.0 pF
Mixer output resistance (Pin 20) 1.25 1.5 kΩ
IF section IF amp gain 50Ω source 39.7 dB
Limiter gain 50Ω source 62.5 dB
Input limiting -3dB, R17 = 5.1k Test at Pin 18 -113 dBm
AM rejection 80% AM 1kHz 29 34 43 dB
Audio level, R10 = 100k 15nF de-emphasis 80 150 260 mVRMS
Unmuted audio level, R11 = 100k 150pF de-emphasis 480 mV
SINAD sensitivity RF level -118dB 16 dB
THD Total harmonic distortion -34 -42 dB
S/N Signal-to-noise ratio No modulation for noise 73 dB
IF RSSI output, R9 = 100kΩ1IF level = -118dBm 0 160 650 mV
IF level = -68dBm 1.9 2.5 3.1 V
IF level = -18dBm 4.0 4.8 5.6 V
RSSI range R9 = 100kΩ Pin 16 90 dB
RSSI accuracy R9 = 100kΩ Pin 16 +1.5 dB
IF input impedance 1.40 1.6 kΩ
IF output impedance 0.85 1.0 kΩ
Limiter input impedance 1.40 1.6 kΩ
Unmuted audio output resistance 58 kΩ
Muted audio output resistance 58 kΩ
RF/IF section (int LO)
Unmuted audio level 4.5V = VCC, RF level = -27dBm 450 mVRMS
System RSSI output 4.5V = VCC, RF level = -27dBm 4.3 V
NOTE:
1. The generator source impedance is 50Ω, but the SA605 input impedance at Pin 18 is 1500Ω. As a result, IF level refers to the actual signal
that enters the SA605 input (Pin 8) which is about 21dB less than the ”available power” at the generator.
Philips Semiconductors Product specification
SA605High performance low power mixer FM IF system
1997 Nov 07 5
CIRCUIT DESCRIPTION
The SA605 is an IF signal processing system suitable for second IF
or single conversion systems with input frequency as high as 1GHz.
The bandwidth of the IF amplifier is about 40MHz, with 39.7dB(v) of
gain from a 50Ω source. The bandwidth of the limiter is about
28MHz with about 62.5dB(v) of gain from a 50Ω source. However,
the gain/bandwidth distribution is optimized for 455kHz, 1.5kΩ
source applications. The overall system is well-suited to battery
operation as well as high performance and high quality products of
all types.
The input stage is a Gilbert cell mixer with oscillator. Typical mixer
characteristics include a noise figure of 5dB, conversion gain of
13dB, and input third-order intercept of -10dBm. The oscillator will
operate in excess of 1GHz in L/C tank configurations. Hartley or
Colpitts circuits can be used up to 100MHz for xtal configurations.
Butler oscillators are recommended for xtal configurations up to
150MHz.
The output of the mixer is internally loaded with a 1.5kΩ resistor
permitting direct connection to a 455kHz ceramic filter. The input
resistance of the limiting IF amplifiers is also 1.5kΩ. With most
455kHz ceramic filters and many crystal filters, no impedance
matching network is necessary. To achieve optimum linearity of the
log signal strength indicator, there must be a 12dB(v) insertion loss
between the first and second IF stages. If the IF filter or interstage
network does not cause 12dB(v) insertion loss, a fixed or variable
resistor can be added between the first IF output (Pin 16) and the
interstage network.
The signal from the second limiting amplifier goes to a Gilbert cell
quadrature detector. One port of the Gilbert cell is internally driven
by the IF. The other output of the IF is AC-coupled to a tuned
quadrature network. This signal, which now has a 90° phase
relationship to the internal signal, drives the other port of the
multiplier cell.
Overall, the IF section has a gain of 90dB. For operation at
intermediate frequencies greater than 455kHz, special care must be
given to layout, termination, and interstage loss to avoid instability.
The demodulated output of the quadrature detector is available at
two pins, one continuous and one with a mute switch. Signal
attenuation with the mute activated is greater than 60dB. The mute
input is very high impedance and is compatible with CMOS or TTL
levels.
A log signal strength completes the circuitry. The output range is
greater than 90dB and is temperature compensated. This log signal
strength indicator exceeds the criteria for AMPs or TACs cellular
telephone.
NOTE: dB(v) = 20log VOUT/VIN
Philips Semiconductors Product specification
SA605High performance low power mixer FM IF system
1997 Nov 07 6
20
RSSI
OSCILLATOR
LIMITER
19 18 17 16 15 14 13 12 11
10987654321
IF AMP
MINI–CIRCUIT ZSC2–1B
MUTE RSSI
OUTPUT AUDIO UNMUTED
AUDIO
C14
IFT1
C13C12C11C10
C9
C8
C7
C6
R9 R10 R11
X1
R7
30.5
L2
SW3 SW4SW1
VCC
EXT.
LOC
OSC
44.545
45MHZ
R3
R1
R2
SW2
C3 C4
R4
51.1 C5
C2
C1
L1
R6
178 R8
39.2
”C” WEIGHTED
AUDIO
MEASUREMENT
CIRCUIT
45.06
MHZ
50.5
2430
3880
96.5
32.6 71.5
C24 C22 C20 C19
C18
C15
C16
C17
FLT2
SW7 SW6 SW5
SW8
SW9
C23 C21
R17
5.1k
FLT1
-25dB,
1500/50Ω PAD -10dB,
50/50Ω PAD -29dB,
929/50Ω PAD -10.6dB,
50/50Ω PAD -36dB,
156k/50Ω PAD
22pF NPO Ceramic
1nF Ceramic
10.0pF NPO Ceramic
10pF NPO Ceramic
100nF +10% Monolithic Ceramic
100nF +10% Monolithic Ceramic
100nF +10% Monolithic Ceramic
100nF +10% Monolithic Ceramic
15nF +10% Ceramic
100nF +10% Monolithic Ceramic
150pF +2% N1500 Ceramic
100nF +10% Monolithic Ceramic
6.8µF Tantalum (minimum) *
C21
C23
C25
Flt 1
Flt 2
IFT 1
L1
L2
X1
R9
R17
R10
R11
100nF +10% Monolithic Ceramic
100nF +10% Monolithic Ceramic
100k +1% 1/4W Metal Film (optional)
100k +1% 1/4W Metal Film (optional)
5.1k +5% 1/4W Carbon Composition
100k +1% 1/4W Metal Film
44.545MHz Crystal ICM4712701
0.8µH TOKO 292CNS–T1038Z
Ceramic Filter Murata SFG455A3 or equiv
Ceramic Filter Murata SFG455A3 or equiv
100nF +10% Monolithic Ceramic
C1
C2
C5
C6
C7
C8
C9
C10
C11
C12
C13
C14
C15
C17
C18
QUAD
DETECTOR
MUTE
SWITCH
MIXER
700
Automatic Test Circuit Component List
EMITTER BASE
1.3k
51.7
71.5
96.5
32.8
51.5
47pF NPO Ceramic
180pF NPO Ceramic
C26 390pF +10% Monolithic Ceramic
455kHz 270µH TOKO #303LN-1129
300nH TOKO #5CB-1055Z
C26
* NOTE: This value can be reduced when a battery is the power source.
SR00337
Figure 3. SA605 45MHz Test Circuit (Relays as shown)
Philips Semiconductors Product specification
SA605High performance low power mixer FM IF system
1997 Nov 07 7
20
RSSI
OSCILLATOR
LIMITER
19 18 17 16 15 14 13 12 11
10987654321
IF AMP
MUTE RSSI
OUTPUT AUDIO UNMUTED
AUDIO
C14
IFT1
C13C12C11C10
C9
C8
C7
C6
R9 R10 R11
X1
L2
VCC
C5
C2
C1
L1
C18
C15
C17
FLT2
C23 C21
R17
5.1k
FLT1
R5
C25
QUAD
DETECTOR
MUTE
SWITCH
MIXER
700
Application Component List
45MHz
INPUT
22pF NPO Ceramic
1nF Ceramic
10.0pF NPO Ceramic
10pF NPO Ceramic
100nF +10% Monolithic Ceramic
100nF +10% Monolithic Ceramic
100nF +10% Monolithic Ceramic
100nF +10% Monolithic Ceramic
15nF +10% Ceramic
100nF +10% Monolithic Ceramic
150pF +2% N1500 Ceramic
100nF +10% Monolithic Ceramic
6.8µF Tantalum (minimum)
C21
C23
C25
Flt 1
Flt 2
IFT 1
L1
L2
X1
R9
R17
R10
R11
100nF +10% Monolithic Ceramic
100nF +10% Monolithic Ceramic
100k +1% 1/4W Metal Film (optional)
100k +1% 1/4W Metal Film (optional)
5.1k +5% 1/4W Carbon Composition
100k +1% 1/4W Metal Film
44.545MHz Crystal ICM4712701
0.8µH TOKO 292CNS–T1038Z
Ceramic Filter Murata SFG455A3 or equiv
Ceramic Filter Murata SFG455A3 or equiv
100nF +10% Monolithic Ceramic
C1
C2
C5
C6
C7
C8
C9
C10
C11
C12
C13
C14
C15
C17
C18
47pF NPO Ceramic
180pF NPO Ceramic
C26 390pF +10% Monolithic Ceramic
455kHz 270µH TOKO #303LN-1129
300nH TOKO #5CB-1055Z
C26
* NOTE: This value can be reduced when a battery is the power source.
SR00338
Figure 4. SA605 45MHz Application Circuit
Philips Semiconductors Product specification
SA605High performance low power mixer FM IF system
1997 Nov 07 8
RF GENERATOR NE605 DEMO BOARD
RSSI AUDIO DATA
C–MESSAGE
HP339A DISTORTION
ANALYZER
SCOPE
DC VOLTMETER
VCC (+6)
45MHz
SR00339
Figure 5. SA605 Application Circuit Test Set Up
NOTES:
1. C-message: The C-message filter has a peak gain of 100 for accurate measurements. Without the gain, the measurements may be af-
fected by the noise of the scope and HP339 analyzer.
2. Ceramic filters: The ceramic filters can be 30kHz SFG455A3s made by Murata which have 30kHz IF bandwidth (they come in blue), or
16kHz CFU455Ds, also made by Murata (they come in black). All of our specifications and testing are done with the more wideband filter.
3. RF generator: Set your RF generator at 45.000MHz, use a 1kHz modulation frequency and a 6kHz deviation if you use 16kHz filters, or
8kHz if you use 30kHz filters.
4. Sensitivity: The measured typical sensitivity for 12dB SINAD should be 0.22µV or -120dBm at the RF input.
5. Layout: The layout is very critical in the performance of the receiver. We highly recommend our demo board layout.
6. RSSI: The smallest RSSI voltage (i.e., when no RF input is present and the input is terminated) is a measure of the quality of the layout and
design. If the lowest RSSI voltage is 250mV or higher, it means the receiver is in regenerative mode. In that case, the receiver sensitivity
will be worse than expected.
7. Supply bypass and shielding: All of the inductors, the quad tank, and their shield must be grounded. A 10-15µF or higher value tantalum
capacitor on the supply line is essential. A low frequency ESR screening test on this capacitor will ensure consistent good sensitivity in pro-
duction. A 0.1µF bypass capacitor on the supply pin, and grounded near the 44.545MHz oscillator improves sensitivity by 2-3dB.
8. R5 can be used to bias the oscillator transistor at a higher current for operation above 45MHz. Recommended value is 22kΩ, but should not
be below 10kΩ.
Philips Semiconductors Product specification
SA605High performance low power mixer FM IF system
1997 Nov 07 9
20
0
–20
–40
–60
–80
–100
5
4
3
2
1
0
–130 –110 –90 –70 –50 –30 –10 10
AUDIO REF = 174mVRMS
AM (80%)
NOISE
RSSI
(Volts)
RELATIVE TO AUDIO OUTPUT (dB)
RF INPUT LEVEL (dBm)
RF = 45MHz
IF = 455kHz
VCC = 6V
RSSI
(Volts)
THD NOISE
SR00340
Figure 6. SA605 Application Board at 25°C
Philips Semiconductors Product specification
SA605High performance low power mixer FM IF system
1997 Nov 07 10
DIP20: plastic dual in-line package; 20 leads (300 mil) SOT146-1
Philips Semiconductors Product specification
SA605High performance low power mixer FM IF system
1997 Nov 07 11
SO20: plastic small outline package; 20 leads; body width 7.5 mm SOT163-1
Philips Semiconductors Product specification
SA605High performance low power mixer FM IF system
1997 Nov 07 12
SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm SOT266-1
Philips Semiconductors Product specification
SA605High performance low power mixer FM IF system
1997 Nov 07 13
Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products,
including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright,
or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes
only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing
or modification.
LIFE SUPPORT APPLICATIONS
Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appl iances, devices,
or systems where malfunction of a Philips Semiconductors and Philips Electronics North America Corporation Product can reasonably be expected
to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips
Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully
indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale.
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design
and supply the best possible product.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Sunnyvale, California 94088–3409
Telephone 800-234-7381
DEFINITIONS
Data Sheet Identification Product Status Definition
Objective Specification
Preliminary Specification
Product Specification
Formative or in Design
Preproduction Product
Full Production
This data sheet contains the design target or goal specifications for product development. Specifications
may change in any manner without notice.
This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes
at any time without notice, in order to improve design and supply the best possible product.
Copyright Philips Electronics North America Corporation 1997
All rights reserved. Printed in U.S.A.
