FM25C160B
16-Kbit (2 K × 8) Serial (SPI) Automotive
F-RAM
Cypress Semiconductor Corporation • 198 Champion Court • San Jose,CA 95134-1709 • 408-943-2600
Document Number: 001-86150 Rev. *C Revised August 14, 2015
16-Kbit (2 K × 8) Serial (SPI) Automotive F-RAM
Features
■16-Kbit ferroelectric random access memory (F-RAM) logically
organized as 2 K × 8
❐High-endurance 10 trillion (1013) read/writes
❐121-year data retention (See the Data Retention and
Endurance table)
❐NoDelay™ writes
❐Advanced high-reliability ferroelectric process
■Very fast serial peripheral interface (SPI)
❐Up to 15 MHz frequency
❐Direct hardware replacement for serial flash and EEPROM
❐Supports SPI mode 0 (0,0) and mode 3 (1,1)
■Sophistica te d w r ite protec ti on s cheme
❐Hardware protection using the Write Protect (WP) pin
❐Software protection using Write Disable instruction
❐Software block protection for 1/4, 1/2, or entire array
■Low power consumption
❐300 A active current at 1 MHz
❐10 A (typ) standby current at +85 C
■Voltage operation: VDD = 4.5 V to 5.5 V
■Automotive-E temperature: –40 C to +125 C
■8-pin small outline inte grated circuit (SOIC) package
■AEC Q100 Grade 1 compliant
■Restriction of hazardous substances (RoHS) compliant
Functional Description
The FM25C160B is a 16-Kbit nonvolatile memory employing an
advanced ferroelectric process. A ferroelectric random access
memory or F-RAM is nonvolatile and performs reads and writes
similar to a RAM. It provides reliable data retention for 121 years
while eliminating the complexities, overhead, and system level
reliability problems caused by seri al flash, EEPROM, and othe r
nonvolatile memories.
Unlike serial flash and EEPROM, the FM25C160B performs
write operations at bus speed. No write delays are incurred. Data
is written to the memory array immediately after each byte is
successfully transferred to the device. The next bus cycle can
commence without the need for data polling. In addition, the
product offers substantial write endura nce compared with other
nonvolatile memories. The FM25C160B is capable of supporting
1013 read/write cycles, or 10 million times more write cycles than
EEPROM.
These capabilities make the FM25C160B ideal for nonvolatile
memory applications requiring frequent or rapid writes.
Examples range from data collection, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of serial flash or EEPROM can cause data loss.
The FM25C160B provides substantial benefits to users of serial
EEPROM or flash as a hardware drop-in replacement. The
FM25C160B uses the high-speed SPI bus, which enhances the
high-speed write capability of F-RAM technology. The device
specifications are guaranteed over an automotive-e temperature
range of –40 C to +125 C.
For a complete list of related resources, click here.
Instruction Decoder
Clock Generator
Control Logic
Write Protect
Instruction Register
Address Register
Counter
2 K x 8
F-RAM Array
11
Data I/ O Register
8
Nonvolatile Status
Register
3
WP
CS
HOLD
SCK
SOSI
Logic Block Diagram
FM25C160B
Document Number: 001-86150 Rev. *C Page 2 of 20
Contents
Pinout ................................................................................3
Pin Definitions ..................................................................3
Functional Overview ................ ... .............. ... .............. ... ...4
Memory Architecture ................... ... .............. ... .............. ...4
Serial Peripheral Interface – SPI Bus ........................ ... ...4
SPI Overview ............ ... .............. ... .............. ... ..............4
SPI Modes ................... ... .............. ... .............. .. ............6
Power Up to First Access ............................................6
Command Structure ....................................................6
WREN - Set Write Enable Latch .................................6
WRDI - Reset Write Enable Latch ...............................6
Status Register and Write Protection .............................7
RDSR - Read Status Register .....................................7
WRSR - Write Status Register ....................................7
Memory Operation ............ ... .............. ... .............. ..............8
Write Operation ................. .............. .. .............. ............8
Read Operation ...........................................................8
HOLD Pin Operation ...................................................9
Endurance ................................................................. 10
Maximum Ratings ...........................................................11
Operating Range ..................... .. .............. ... .............. ... ....11
DC Electrical Characteristics ......................... ...............11
Data Retention and Endurance .....................................12
Example of an F-RAM Life Time
in an AEC-Q100 Automotive Application .....................12
Capacitance ....................................................................12
Thermal Resistance ........................................................12
AC Test Conditions ......................... .............. ... ..............12
AC Switching Characteristi cs ... .............. ... .. .................13
Power Cycle Timing .......................................................15
Ordering Information ......................................................16
Ordering Code Definitions .........................................16
Package Diagram ............................................................17
Acronyms ........................................................................ 18
Document Conventions ..................... ... ... .............. ... .....18
Units of Measure ............. ... ... .............. ... .. .............. ...18
Document History Page ........................... ... .. .............. ...19
Sales, Solutions, and Legal Information ......................20
Worldwide Sales and Design Support .......................20
Products .................................................................... 20
PSoC® Solutions ......................................................20
Cypress Developer Community ...................... ... ........20
Technical Support .....................................................20
FM25C160B
Document Number: 001-86150 Rev. *C Page 3 of 20
Pinout Figure 1. 8-pin SOIC pinout
HOLD
SCK
1
2
3
4 5
CS 8
7
6
VDD
SI
SO
Top View
not to scale
V
SS
WP
Pin Definitions
Pin Name I/O Type Description
CS Input Chip Select. This active LOW input activates the device. When HIGH, the device enters
low-power standby mode, ignores other inputs, and tristates the output. When LOW , the device
internally activates the SCK signal . A falling edge on CS must occur before every opcode.
SCK Input Serial Clock. All I/O activity is synchronized to th e serial clock. In puts are latched on the rising
edge and outputs occur on the falling edge. Because the device is synchronous, the clock
frequency may be any value between 0 and 15 MHz and may be interrupted at any time.
SI[1] Input Serial Input. All data is input to the device on this pin. The pin is sampled on the rising edge of
SCK and is ignored at other times. It should al ways be driven to a valid logi c level to meet IDD
specifications.
SO[1] Output Serial Output. This is the data output pin. It is driven during a read and remains tristated at all
other times including when HOLD is LOW. Data transitions are driven on the falling edge of the
serial clock.
WP Input Write Protect. This active LOW pin prevents write operation to the St atus Register when WPEN
is set to ‘1’. This is critical because other write protection features are controlled through the
Status Register. A complete explanation of write protection is provided in Status Register and
Write Protection on page 7. This pin must be tied to VDD if not used. Note that the function of WP
is different from the FM25160.
HOLD Input HOLD Pin. The HOLD pin is used when the host CPU must interrupt a memory operati on for
another task. When HOLD is LOW, the current operation is suspended. The device ignores any
transition on SCK or CS. All tra nsitions on HOLD must occur while SCK is LOW. Thi s pin must
be tied to VDD if not used.
VSS Power supply Ground for the device. Must be connected to the ground of the system.
VDD Power supply Power supply input to the device.
Note
1. SI may be connected to SO for a single pin data interface.
FM25C160B
Document Number: 001-86150 Rev. *C Page 4 of 20
Functional Overview
The FM25C160B is a serial F-RAM memory. The memory array
is logically organized as 2,048 × 8 bits and is accessed using an
industry standard serial peripheral interface (SPI) bus. The
functional operation of the F-RAM is similar to serial flash and
serial EEPROMs. The major difference between the
FM25C160B and a serial flash or EEPROM with the same pinout
is the F-RAM's superior write performance, high endurance, and
low power consumption. It also differs from Cypress’s 25160 by
supporting SPI mode 3 and the industry standard 16-bit
addressing protocol. This makes the FM25C160B a drop-in
replacement for most 16-Kbit SPI EEPROMs that support modes
0 & 3.
Memory Architecture
When accessing the FM25C160B, the user addresses 2K
locations of eight data bits each. These eight data bits are shifted
in or out serially. The addresses are accessed using the SPI
protocol, which includes a chip select (to permit multiple devices
on the bus), an opcode, and a two-byte address. The upper 5 bits
of the address range are 'don't care' values. The complete
address of 11 bits specifies each byte address uniquely.
Most functions of the FM25C160B are either controlled by the
SPI interface or handled by on-bo ard circuitry. The access time
for the memory operation is essentially zero, beyond the time
needed for the serial protocol. That is, the memory is read or
written at the speed of the SPI bus. Unlike a serial flash or
EEPROM, it is not necessary to poll the device for a ready
condition beca us e wr it es oc cur at b us sp eed . B y the time a n ew
bus transaction can be shifted into the device , a write operation
is complete. This is explained in more detail in the interface
section.
Note The FM25C160B contains no power manageme nt ci rcuits
other than a simple internal power-on reset circuit. It is the user’s
responsibility to ensure that VDD is within datasheet tolerances
to prevent incorrect operation. It is recommended that the part is
not powered down with chip enabl e active.
Serial Peripheral Interface – SPI Bus
The FM25C160B is a SPI slave device and opera tes at speeds
up to 15 MHz. This high-speed serial bus provides
high-performance serial communication to a SPI master. Many
common microcontrollers have hardware SPI ports allowing a
direct interface. It is quite simple to emulate the port using
ordinary port pins for microcontrollers that do not. The
FM25C160B operates in SPI Mode 0 and 3.
SPI Overview
The SPI is a four-pin interface with Chip Select (CS), Serial Input
(SI), Serial Output (SO), and Serial Clock (SCK) pins.
The SPI is a synchronous serial interface, which uses clock and
data pins for memory access and su pports multiple devices on
the data bus. A device on the SPI bus is activated using the CS
pin.
The relationship between chip select, clock, and data is dictated
by the SPI mode. This device supports SPI modes 0 and 3. In
both of these modes, data is clocked into the F-RAM on the rising
edge of SCK starting from the first rising edge after CS goes
active.
The SPI protocol is controlled by opcodes. These opcodes
specify the commands from the bus master to the sl ave de vice.
After CS is activated, the first byte transferred from the bus
master is the opcode. Following the opcode, any addresses and
data are then transferred. The CS must go inactive after an
operation is comple te and befo re a new opcod e can be issue d.
The commonly used terms in the SPI protocol are as follows:
SPI Master
The SPI master device controls the operations on a SPI bus. An
SPI bus may have only one master with one or more slave
devices. All the slaves share the same SPI bus lines and the
master may select any of the slave devices using the CS pin. All
of the operations must be initiated by the master activating a
slave device by pulling the CS pin of the slave LOW . The master
also generates the SCK and all the data transmission on SI and
SO lines are synchronized with this clock.
SPI Slave
The SPI slave device is activated by the master through the Chip
Select line. A slave device gets the SCK as an input from the SPI
master and all the communication is synchronized with this
clock. An SPI slave never initiates a communication on the SPI
bus and acts only on the instruction from the master.
The FM25C160B operate s as an SPI slave and may share the
SPI bus with other SPI slave devices.
Chip Select (CS)
To select any slave device, the master needs to pull down the
corresponding CS pin. Any instruction can be issued to a slave
device only while the CS pin is LOW. When the device is not
selected, data through the SI pin is ignored and the serial output
pin (SO) remains in a high-impedan ce state.
Note A new instruction must begin with the falling edge of CS.
Therefore, only one opcode can be issued fo r each active Chip
Select cycle.
Serial Clock (SCK)
The Serial Clock is generated by the SPI master and the
communication is synchronized with this clock after CS goes
LOW.
The FM25C160B enables SPI modes 0 and 3 for data
communication. In both of these modes, the inputs are latched
by the slave device on the rising edge of SCK and ou tputs are
issued on the falling edge. Therefore, the first rising edge of SCK
signifies the arrival of the first bit (MSB) of a SPI instruction on
the SI pin. Further, all data inputs and outputs are synchronized
with SCK.
FM25C160B
Document Number: 001-86150 Rev. *C Page 5 of 20
Data Transmission (SI/SO)
The SPI data bus consists of two lines, SI and SO, for serial data
communication. SI is also referred to as Master Out Slave In
(MOSI) and SO is referred to as Master In Slave Out (MISO). The
master issues instructions to the slave through the SI pin, while
the slave responds through the SO pin. Multiple slave devices
may share the SI and SO lines as described earlier.
The FM25C160B has two separate pins for SI and SO, which can
be connected with the master as shown in Figure 2.
For a microcontroller that has no dedicated SPI bus, a
general-purpose port may be used. To reduce hardware
resources on the controller , it is possible to connect the two data
pins (SI, SO) together and tie off (HIGH) the HOLD and WP pins.
Figure 3 shows such a configuration, which uses only three pins.
Most Significant Bit (MSB)
The SPI protocol requires that the first bit to be transmitted is the
Most Significant Bit (MSB). This is valid for both address and
data tran s missi on .
The 16-Kbit serial F-RAM requires a 2-byte address for any read
or write operation. Because the address is on ly 11 bits, the first
five bits which are fed in are ignored by the device. Although
these three bits are ‘don’t care’, Cypress recommends that these
bits be set to 0s to enable seamless transition to higher memory
densities.
Serial Opcode
After the slave device is selected with CS going LOW, the first
byte received is treated as the opcode for the intended operation.
FM25C160B uses the standard opcodes for memory accesses.
Invalid Opcode
If an invalid opcode i s received, the opcode is ignored and the
device ignores any additio nal serial data on the SI pin until the
next falling edge of CS, and the SO pin remains tristated.
Status Register
FM25C160B has an 8-bit Status Register. The bits in the Status
Register are used to configure the device. These bits are
described in Table 3 on page 7 .
Figure 2. System Configuration with SPI port
Figure 3. System Configuration without SPI port
CS1
CS2
HOLD1
HOLD2
FM25C160B FM25C160B
WP1
WP2
SCK SI SO SCK SI SO
CS HOLD WP CS HOLD WP
SCK
MOSI
MISO
SPI
Microcontroller
FM25C160B
Microcontroller
SCK SI SO
CS HOLD WP
P1.2
P1.1
P1.0
FM25C160B
Document Number: 001-86150 Rev. *C Page 6 of 20
SPI Modes
FM25C160B may be driven by a microcontroller with its SPI
peripheral running in either of the following two modes:
■SPI Mode 0 (CPOL = 0, CPHA = 0)
■SPI Mode 3 (CPOL = 1, CPHA = 1)
For both these modes, the input data is latched i n on the rising
edge of SCK starting from the first rising edge after CS goes
active. If the clock starts from a HIGH state (in mode 3), the first
rising edge after the clock toggles is considered. The output data
is available on the falling edge of SCK.
The two SPI modes are shown in Figure 4 on page 6 and Figure
5 on page 6. The status of the clock when the bus master is not
transferring data is:
■SCK remains at 0 for Mode 0
■SCK remains at 1 for Mode 3
The device detects the SPI mode from the status of the SCK pin
when the device is selected by bringi ng the CS pin LOW. If the
SCK pin is LOW when the device is selected, SPI Mode 0 is
assumed and if the SCK pin is HIGH, it works in SPI Mode 3.
Power Up to First Access
The FM25C160B is not accessible for a tPU time after power up.
Users must comply with the timing parameter tPU, which is the
minimum time from VDD (min) to the first CS LOW.
Command Structure
There are six commands, called opcodes, that can be issued by
the bus master to the FM25C160B. They are listed in Table 1.
These opcodes control the functions performed by the memory.
WREN - Set Write Enable Latch
The FM25C160B will power up with writes disabled. The WREN
command must be issued before any write operation. Sending
the WREN opcode allows the user to issue subsequent opcodes
for write operations. These include writing the Status Register
(WRSR) and writing the memory (WRITE).
Sending the WREN opcode causes the internal Write Enable
Latch to be set. A flag bit in the Status Register, called WEL,
indicates the state of the latch. WEL = ‘1’ indicates that writes are
permitted. Attempting to write the WEL bit in the Status R egist er
has no effect on the state of this bit – only the WREN opcode can
set this bit. The WEL bit will be automatically cleared on the rising
edge of CS following a W RDI, a WRSR, or a WRIT E opera tion.
This preve nt s f ur ther wr it es to the Status Register or the F-RAM
array without another WREN command. Figure 6 illustrates the
WREN command bus configuration.
WRDI - Reset Write Enable Latch
The WRDI command disables all write activity by clearing the
Write Enable Latch. The user can verify that writes are disabled
by reading the WEL bit in the Status Register an d verifying that
WEL is equal to ‘0’. Figure 7 illustrates the WRDI command bus
configuration.
Figure 4. SPI Mode 0
Figure 5. SPI Mode 3
LSB
MSB
76543210
CS
SCK
SI
012 3 4 567
CS
SCK
SI 76543210
LSB
MSB
012 3 4 567
Table 1. Opcode comma nd s
Name Description Opcode
WREN Set write enable latch 0000 0110b
WRDI Write disable 0000 0100b
RDSR Read Status Register 0000 0101b
WRSR Write Status Register 0000 0001b
READ Read memory data 0000 0011b
WRITE Write memory data 0000 0010b
Figure 6. WREN Bus Configuration
Figure 7. WRDI Bus Configuration
0 0 0 0 0 1 1 0
CS
SCK
SI
SO
HI-Z
0 1 2 3 4 5 6 7
0 0 0
CS
SCK
SI
SO
HI-Z
0 1 2 3 4 5 6 7
00
001
FM25C160B
Document Number: 001-86150 Rev. *C Page 7 of 20
Status Register and Write Protection
The write protection features of the FM25C160B are multi-tiered
and are enabled through the status register. The S t atus Register
is organized as follows. (The default value shipped from the
factory for bits in the Status Register is ‘0’).
Bits 0 and 4-6 are fixed at ‘0’; none of these bits can be modified.
Note that bit 0 (“Ready or Write in progress” bit in serial flash and
EEPROM) is unnecessary, as the F-RAM writes in real-time and
is never busy, so it reads out as a ‘0’. Th e BP1 and BP0 control
the software write-protection features and are nonvolatile bits.
The WEL flag indicates the state of the Write Enable Latch.
Attempting to directly write the WEL bit in the S tatus Register has
no effect on its state. This bit is internally set and cleared via the
WREN and WRDI commands, respectively.
BP1 and BP0 are memory block write protection bits. They
specify portions of memory that are write-protected as shown in
Table 4.
The BP1 and BP0 b its and the Write Enable Latch are the onl y
mechanisms that protect the memory from writes. The remaining
write protection features protect inadvertent changes to the block
protect bits.
The write protect enable bit (WPEN) in the Status Register
controls the effect of the hardware write protect (WP) pin. When
the WPEN bit is set to ‘0’, the status of the WP pin is ignored.
When the WPEN bit is set to ‘1’, a LOW on the WP pin inhibits a
write to the Status Register. Thus the Status Register is
write-protected only when WPEN = ‘1’ and WP = ‘0’.
Table 5 summarizes the write protection conditions.
RDSR - Read Status Register
The RDSR command allows the bus master to verify the
contents of the Status Register. Reading the status register
provides information about the current state of the
write-protection features. Following the RDSR opcode, the
FM25C160B will return one b yte with th e contents of the Status
Register.
WRSR - Write Status Register
The WRSR command allows the SPI bus master to write into the
Status Register and change the write protect configuration by
setting the WPEN, BP0 and BP1 bits as required. Before issuing
a WRSR command, the WP pin must be HIGH or inactive. Note
that on the FM25C160B, WP only prevents writing to the Status
Register, not the memory array. Before sending the WRSR
command, the user must send a WREN command to enable
writes. Executing a WRSR command is a write operation and
therefore, clears the Write Enable Latch.
Table 2. Status Register
Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0
WPEN (0) X (0) X (0) X (0) BP1 (0) BP0 (0) WEL (0) X (0)
Table 3. Status Register Bit Definition
Bit Definition Description
Bit 0 Don’t care This bit is non-writable and always returns ‘0’ upon read.
Bit 1 (WEL) Write Enable Latch WEL indicates if the device is write enabled. This bit defaults to ‘0’ (disabled) on power-up.
WEL = '1' --> Write enabled
WEL = '0' --> Write disabled
Bit 2 (BP0) Block Protect bit ‘0’ Used for block protection. For details, see Table 4 on page 7.
Bit 3 (BP1) Block Protect bit ‘1’ Used for block protection. For details, see Table 4 on page 7.
Bit 4-6 Don’t care Th ese bits are non-writable and always return ‘0’ upon read.
Bit 7 (WPEN) Write Protect En able bit Used to enable the function of Write Protect Pin (WP). For details, see Table 5 on page 7.
Table 4. Block Memory Write Protection
BP1 BP0 Protected Addres s Ran ge
0 0 None
0 1 600h to 7FFh (upper 1/4)
1 0 400h to 7FFh (upper 1/2)
1 1 000h to 7FFh (all)
Table 5. Write Protection
WEL WPEN WP Protected
Blocks Unprotected
Blocks Status
Register
0 X X Protected Protected Protected
1 0 X Protected Unprotected Unprotected
1 1 0 Protected Unprotected Protected
1 1 1 Protected Unprotected Unprotected
FM25C160B
Document Number: 001-86150 Rev. *C Page 8 of 20
Memory Operation
The SPI interface, which is capable of a high clock frequency,
highlights the fast write capability of the F-RAM technology.
Unlike serial flash and EEPROMs, the FM25C160B can perform
sequential writes at b us speed. No page register is needed and
any number of sequential writes may be performed.
Write Operation
All writes to the memory begin with a WREN opcode. The WRITE
opcode is followed by a two-byte address containing the 11-bit
address (A10-A0) of the first data byte to be written into the
memory . The upper five bits of the two-byte address are ignored.
Subsequent bytes are data bytes, which are written sequentially .
Addresses are incremented internally as long as the bus master
continues to issue clocks and keeps CS LOW . If the last address
of 7FFh is reached, the counter will roll over to 000h. Data is
written MSB first. The rising edge of CS terminates a write
operation. A write operation is shown in Figure 10.
Note When a burst write reaches a protected block address, the
automatic address increment sto ps and all the subsequent da ta
bytes received for write will be ignored by the device.
EEPROMs use page buffers to increase their write throughput.
This compensates for the technology's inherently slow write
operations. F-RAM memories do not have page buffers because
each byte is written to the F-RAM array immediately after it is
clocked in (after the eighth clock). This allows any number of
bytes to be written without page buffer delays.
Note If the power is lost in the middle of the write operation, only
the last completed byte will be written.
Read Operation
After the falling edge of CS, the bu s master can issue a READ
opcode. Following the READ command is a two-byte address
containing the 1 1-bit address (A10-A0) of the first byte of the read
operation. The upper five bi ts of the address are ignored. After
the opcode and address are issued, the device drives out the
read data on the next eight clocks. The SI input is ignored during
read data bytes. Subsequent bytes are data bytes, which are
read out sequentially. Addresses are incremented internally as
long as the bus master continues to issue clocks and CS is LOW .
If the last addre ss of 7FFh is reached, the counter will roll o ver
to 000h. Data is read MSB first. The rising edge of CS terminates
a read operation and tristates the SO pin. A read operation is
shown in Figure 11.
Figure 8. RDSR Bus Configuration
Figure 9. WRSR Bus Configuration (WREN not shown)
CS
SCK
SO
01234567
SI
000001 0 0
1
HI-Z
012345 67
LSB
D0D1D2D3D4D5D6
MSB
D7
Opcode
Data
CS
SCK
SO
01 23 4567
SI
00000001
MSB LSB
D2D3D7
HI-Z
012345 67
Opcode Data
XX
XX
X
FM25C160B
Document Number: 001-86150 Rev. *C Page 9 of 20
HOLD Pin Operation
The HOLD pin can be used to interrupt a serial operation without
aborting it. If the bus master pulls the HOLD pin LOW whi le SCK
is LOW, the current operati on will pause. Taking the HOLD pin
HIGH while SCK is LOW will resume an operation. The
transitions of HOLD must occur while SCK is LOW , but the SCK
and CS pin can toggle duri ng a hold state.
Figure 10. Memory Write (WREN not shown)
Figure 11. Memory Read
~
~
CS
SCK
SO
01234 5 6 70 7654321 1213141501234567
MSB LSB
Data
D0D1D2D3D4D5D6D7
SI
~
~
Opcode
0000001
XXXXX A9
0
A10
A8 A3 A1A2 A0
11-bit Address
MSB LSB
HI-Z
~
~
CS
SCK
SO
01 23456 70 7654321 12131415012345 6 7
MSB LSB
Data
SI
~
~
Opcode
0000001
XXXXX A9
1
A10
A8 A3 A1A2 A0
11-bit Address
MSB LSB
D0D1D2D3D4D5D6D7
HI-Z
Figure 12. HOLD Operation [2]
CS
SCK
HOLD
SO
~
~
~
~
SI VALID IN VALID IN
~
~
~
~
~
~
Note
2. Figure shows HOLD operation for input mode and output mode.
FM25C160B
Document Number: 001-86150 Rev. *C Page 10 of 20
Endurance
The FM25C160B devices are capable of being accessed at least
1013 times, reads or writes. An F-RAM memory operates with a
read and restore mechan ism. Therefor e, an endurance cycl e is
applied on a row basis for each access (read or write) to the
memory array. The F-RAM architecture is b ased on an array of
rows and columns of 256 rows of 64-bits each. The entire row is
internally accessed once whether a single byte or all eight bytes
are read or written. Each byte in the row is counted only once in
an endurance calculation. Table 6 shows endurance calculations
for a 64-byte repeating loop, which includes an opcode, a starting
address, and a sequential 64-byte data stream. This causes
each byte to experience one endurance cycle through the loop.
Table 6. Time to Reach Endurance Limit for Repeating
64-byte Loop
SCK Freq
(MHz) Endurance
Cycles/sec Endurance
Cycles/year Years to Reach
Limit
10 18,660 5.88 × 1011 17.0
5 9,330 2.94 × 1011 34.0
1 1,870 5.88 × 1010 170.1
FM25C160B
Document Number: 001-86150 Rev. *C Page 11 of 20
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................–55 C to +150 C
Maximum accumulated storage time
At 150 °C ambient temperature .............. .. ... .............. 1000 h
At 125 °C ambient temperature .............. .. ... .............11000 h
At 85 °C ambient temperature .............................. 121 Years
Ambient temperature
with power applied ...................................–55 °C to +125 °C
Supply voltage on VDD relative to VSS .........–1.0 V to +7.0 V
Input voltage .............–1.0 V to +7.0 V and VIN < VDD+1.0 V
DC voltage applied to outputs
in High Z state ............................ ... .....–0.5 V to VDD + 0.5 V
Transient voltage (< 20 ns) on
any pin to ground potential .................–2.0 V to VDD + 2.0 V
Package power dissipation
capability (TA = 25 °C) .................................................1.0 W
Surface mount lead soldering
temperature (3 seconds) ......................................... +260 C
DC output current (1 output at a time , 1s duration) ....15 mA
Electrostatic Discharge Voltage
Human Body Model (AEC-Q100-002 Rev. E) ................... 4 kV
Charged Device Model (AEC-Q100-011 Rev. B) ........... 1.25 kV
Machine Model (AEC-Q100-003 Rev. E) ..........................300 V
Latch up current .....................................................> 140 mA
Operating Range
Range Ambient Temper ature (TA) VDD
Automotive-E –40 C to +125 C 4.5 V to 5.5 V
DC Electrical Characteristics
Over the Operating Range
Parameter Description Test Conditions Min Typ [3] Max Unit
VDD Power supply 4.5 5.0 5.5 V
IDD VDD supply current SCK toggling between
VDD – 0.3 V and VSS, other
inputs VSS or VDD – 0.3 V.
SO = Open.
fSCK = 1 MHz – – 0.3 mA
fSCK = 15 MHz––3mA
ISB VDD standby current CS = VDD. All other inputs
VSS or VDD.TA = 85 °C – – 10 A
TA = 125 °C – – 30 A
ILI Input leakage current VSS < VIN < VDD ––±1A
ILO Output leakage current VSS < VOUT < VDD ––±1A
VIH Input HIGH voltage 0.75 × VDD –V
DD + 0.3 V
VIL Input LOW voltage – 0.3 – 0.25 × VDD V
VOH Output HIGH voltage IOH = –2 mA VDD – 0.8 – – V
VOL Output LOW voltage IOL = 2 mA – – 0.4 V
VHYS[4] Input Hysteresis (CS and SCK pin) 0.05 × VDD ––V
Notes
3. Typical values are at 25 °C, VDD = VDD(typ). Not 100% tested.
4. This parameter is characterized but not 100% tested.
FM25C160B
Document Number: 001-86150 Rev. *C Page 12 of 20
AC Test Conditions
Input pulse levels .................................10% and 90% of VDD
Input rise and fall times ...................................................5 ns
Input and output timing reference levels ................0.5 × VDD
Output load capacitance ..............................................30 pF
Data Retention and Endurance
Parameter Description Test condition Min Max Unit
TDR Dat a re tention TA = 125 C 11000 – Hours
TA = 105 C11–Years
TA = 85 C 121 –
NVCEndurance Over operating temperature 1013 – Cycles
Example of an F-RAM Life Time in an AEC-Q100 Automotive Application
An application does not operate under a steady temperature for the entire usage life time of the application. Instead, it is often expected
to operate in multiple temperature environments throughout the application’s usage life time. Accord ingly, the retention specification
for F-RAM in applications often needs to be cal cu lated cumulatively. An example calculation fo r a multi-temperature thermal profiles
is given below.
Tempeature
TTime Factor
t
Acceleration Factor with respect to Tmax
A [5] Profile Factor
PProfile Life Time
L (P)
T1 = 125 C t1 = 0.1 A1 = 1
8.33 > 10.46 Years
T2 = 105 C t2 = 0. 15 A2 = 8.67
T3 = 85 C t3 = 0.25 A3 = 95.68
T4 = 55 C t4 = 0.50 A4 = 6074.80
Capacitance
Parameter [6] Description Test Conditions Max Unit
COOutput pin capacitance (SO) TA = 25 C, f = 1 MHz, VDD = VDD(typ) 8 pF
CIInput pin capacitance 6pF
Thermal Resist ance
Parameter Description Test Conditions 8-pin SOIC Unit
JA Thermal resistance
(junction to ambient) Test conditions follow standard test methods and
procedures for measuring thermal impedance, per EIA /
JESD51.
147 C/W
JC Thermal resistance
(junction to case) 47 C/W
ALT
LTmax
------------------------ e
Ea
k
------- 1
T
--- 1
Tmax
----------------
–
==
P1
t1
A1
------- t2
A2
------- t3
A3
------- t4
A4
-------
+++
--------------------------------------------------------
=
LP PLTmax=
Notes
5. Where k is the Boltzmann co nstant 8.617 × 10-5 eV/K, Tmax is the highe st temperature specified for the prod uct, and T is any temperature within the F-RAM prod uct
specification. All temperatures are in Kelvin in the equation.
6. This parameter is characterized but not 100% tested.
FM25C160B
Document Number: 001-86150 Rev. *C Page 13 of 20
AC Switching Characteristics
Over the Operating Range
Parameters [7]
Description Min Max Unit
Cypress
Parameter Alt. Parameter
fSCK –SCK Clock frequency 015 MHz
tCH –Clock HIGH time 30 –ns
tCL –Clock LOW time 30 –ns
tCSU tCSS Chip select setup 10 –ns
tCSH tCSH Chip select hold 10 –ns
tOD[8, 9] tHZCS Output disable time –25 ns
tODV tCO Output data valid time –25 ns
tOH –Output hold time 0 – ns
tD–Deselect time 80 –ns
tR[10, 11] –Da ta in rise time –50 ns
tF[10, 11] –Data in fall time –50 ns
tSU tSD Data setup time 5 – ns
tHtHD Data hold time 5 – ns
tHS tSH HOLD setup time 10 –ns
tHH tHH HOLD hold time 10 –ns
tHZ[8, 9] tHHZ HOLD LOW to HI-Z –25 ns
tLZ[9] tHLZ HOLD HIGH to data active –20 ns
Notes
7. Test conditions assume a signal transition time of 5 ns or less, timing reference levels of 0.5 × VDD, input pulse levels of 10% to 90% of VDD, and output loa ding of
the specified I OL/IOH and 30 pF load capacitance shown in AC Test Conditions on page 12.
8. tOD and tHZ are specified with a load cap acitance of 5 pF. Transition is measured when the outputs enter a high impedance state.
9. This parameter is characterized and not 100% tested.
10.Rise and fall times measured between 10% and 90% of wavef orm.
11. These parameters are guaranteed by design and are not tested.
FM25C160B
Document Number: 001-86150 Rev. *C Page 14 of 20
Figure 13. Synchronous Data Timing (Mode 0)
Figure 14. HOLD Timing
HI-Z
VALID IN
HI-Z
CS
SCK
SI
SO
tCL
tCH
tCSU
tSU tH
tODV tOH
t
D
tCSH
tOD
VALID IN VALID IN
CS
SCK
HOLD
SO
tHS
tHZ tLZ
tHH
tHS
tHH
~
~
~
~
SI
tSU
VALID IN VALID IN
~
~
~
~
~
~
FM25C160B
Document Number: 001-86150 Rev. *C Page 15 of 20
Power Cycle Timing
Over the Operating Range
Parameter Description Min Max Unit
tPU Power-up VDD(min) to first access (CS LOW) 1 – ms
tPD Last access (CS HIGH) to power-down (VDD(min)) 0 – µs
tVR [12] VDD power-up ramp rate 30 –µs/V
tVF [12] VDD power-down ramp rate 20 –µs/V
Figure 15. Power Cycle Timing
CS
~
~
~
~
tPU
tVR tVF
VDD
VDD(min)
tPD
VDD(min)
Note
12.Slope measured at any point on VDD waveform.
FM25C160B
Document Number: 001-86150 Rev. *C Page 16 of 20
Ordering Code Definitions
Ordering Information
Ordering Code Package
Diagram Package Type Operating
Range
FM25C160B-GA 51-85066 8-pin SOIC Automotive-E
FM25C160B-GATR 51-85066 8-pin SOIC
All these parts are Pb-free. Contact your local Cypress sales representative for availability of these part s.
Option:
blank = Standard; TR = Tape and Reel
Temperature Range:
A = Automotive-E (–40 C to +125 C)
Package Type:
G = 8-pin SOIC; DG = 8-pin TDFN
Die revision: B
Density: 160 = 16-Kbit
Voltage: C = 3.0 V to 3.6 V
SPI F-RAM
Cypress
25FM C 160 B A G-TR
FM25C160B
Document Number: 001-86150 Rev. *C Page 17 of 20
Package Diagram Figure 16. 8-pin SOIC (150 Mils) Package Outline, 51-85066
51-85066 *G
FM25C160B
Document Number: 001-86150 Rev. *C Page 18 of 20
Acronyms Document Conventions
Units of Measure
Acronym Description
AEC Automotive Electronics Council
CPHA Clock Phase
CPOL Clock Pol arity
EEPROM Electrically Erasable Programmable Read-Only
Memory
EIA Electronic Industries Alliance
I/O Input/Output
JEDEC Joint Electron Devices Engineering Council
JESD JEDEC Standards
LSB Least Significant Bit
MSB Most Significant Bit
F-RAM Ferroelectric Random Access Memory
RoHS Restriction of Hazardous Substances
SPI Serial Peripheral Interface
SOIC Small Outline Integrated Circuit
Symbol Unit of Measure
°C degree Celsius
Hz hertz
kHz kilohertz
Kkilohm
Kbit kilobit
kV kilovolt
MHz megahertz
Amicroampere
smicrosecond
mA milliampere
ms millisecond
ns nanosecond
ohm
%percent
pF picofarad
Vvolt
Wwatt
FM25C160B
Document Number: 001-86150 Rev. *C Page 19 of 20
Document History Page
Document Title: FM25C160B, 16-Kbit (2 K × 8) Serial (SPI) Automotive F-RAM
Document Number: 001-86150
Rev. ECN No. Orig. of
Change Submission
Date Description of Change
** 3912930 GVCH 02/25/2013 New spec.
*A 4227185 GVCH 01/23/2014 Converted to Cypress standard format
Updated Maximum Ratings tab le
- Removed Moisture Sensitivity Level (MSL)
- Added junction temperature and latch up current
Updated Data Retention and Endura nce table
Added “Example of an F-RAM Life T ime in an AEC-Q100 Automotive Applica-
tion” table
Added footnote 5
Added Thermal Resistance table
Removed Package Marking Scheme (top mark)
Removed Ramtron revision history
Completing Sunset Review.
*B 4724387 PSR 04/14/2015 Updated Functional Description:
Added “For a complete list of related resources, click here.” at the end.
Updated Package Diagram:
spec 51-85066 – Changed revision from *F to *G.
Updated to new te mplate.
*C 4884720 ZSK / PSR 08/14/2015 Updated Maximum Ratings:
Updated ratings of “Storage temperature” (Replaced “+125 °C” with “+150 C”).
Removed “Maximum junction temperature”.
Added “Maximum accumulated storage time”.
Added “Ambient temperature with power applied”.
Document Number: 001-86150 Rev. *C Revised August 14, 2015 Page 20 of 20
All products and company names mentioned in this document may be the trademarks of their respective holders.
FM25C160B
© Cypress Semicondu ctor Corpor ation, 2014-2015. The informatio n contai ned herei n is subject to chan ge without no tice. Cypress Semiconductor Corporation assumes no responsibility for the use of
any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypre ss prod uc ts are n ot war r ant ed no r inte nd ed to be used fo r
medical, life supp or t, l if e savin g, cr it ical control or saf ety ap pl ic at io ns, unless pursuant to a n express written ag re em en t with Cypress. Furthermor e, Cyp ress doe s not author iz e its products for use as
critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress p roducts in life -support systems
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Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES
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