FGH80N60FD2TU - ON SEMICONDUCTOR

February, 2020 − Rev. 3

1Publication Order Number:

FGH80N60FD2/D

IGBT - Field Stop

600 V, 40 A

FGH80N60FD2

Description

Using novel field stop IGBT technology, ON Semiconductor’s field

stop IGBTs offer the optimum performance for induction heating and

PFC applications where low conduction and switching losses are

essential.

Features

•High Current Capability

•Low Saturation Voltage: VCE(sat) = 1.8 V (Typ.) @ IC = 40 A

•High Input Impedance

•Fast Switching

•This Device is Pb−Free and is RoHS Compliant

Applications

•Induction Heating, PFC

TO−247−3LD

CASE 340CK

See detailed ordering and shipping information on page 2 of

this data sheet.

ORDERING INFORMATION

www.onsemi.com

VCES IC

600 V 40 A

MARKING DIAGRAM

$Y = ON Semiconductor Logo

&Z = Assembly Plant Code

&3 = Numeric Date Code

&K = Lot Code

FGH80N60FD2 = Specific Device Code

COLLECTOR

(FLANGE)

$Y&Z&3&K

FGH80N60

FD2

FGH80N60FD2

www.onsemi.com

ABSOLUTE MAXIMUM RATINGS

Symbol Description Ratings Unit

VCES Collector to Emitter Voltage 600 V

VGES Gate−Emitter Voltage ±20 V

ICCollector Current TC = 25°C 80 A

TC = 100°C 40 A

ICM (Note 1) Pulsed Collector Current TC = 25°C 160 A

PDMaximum Power Dissipation TC = 25°C 290 W

TC = 100°C116 W

TJOperating Junction Temperature −55 to +150 °C

TSTG Storage Temperature Range −55 to +150 °C

TLMaximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds 300 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. Repetitive rating: Pulse width limited by max. junction temperature.

THERMAL CHARACTERISTICS

Symbol Parameter Typ. Max. Unit

RqJC (IGBT) Thermal Resistance, Junction to Case −0.43 _C/W

RqJA (Diode) Thermal Resistance, Junction to Case −1.45 _C/W

RqJA Thermal Resistance, Junction to Ambient −40 _C/W

PACKAGE MARKING AND ORDERING INFORMATION

Part Number Top Mark Package

Packing

Method Reel Size Tape Width Quantity

FGH80N60FD2TU FGH80N60FD2 TO−247 Tube N/A N/A 30

ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

OFF CHARACTERISTICS

BVCES Collector−Emitter Breakdown Voltage VGE = 0 V, IC = 250 mA600 − − V

DBVCES / DTJTemperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 250 mA−0.6 −V/°C

ICES Collector Cut−Off Current VCE = VCES, VGE = 0 V − − 250 mA

IGES G−E Leakage Current VGE = VGES, VCE = 0 V − − ±400 nA

ON CHARACTERISTICS

VGE(th) G−E Threshold Voltage IC = 250 mA, VCE = VGE 4.5 5.5 7.0 V

VCE(sat) Collector to Emitter Saturation Voltage IC = 40 A, VGE = 15 V, −1.8 2.4 V

IC = 40 A, VGE = 15 V,

TC = 125°C−2.05 −V

DYNAMIC CHARACTERISTICS

Cies Input Capacitance VCE = 30 V, VGE = 0 V,

f = 1 MHz

−2110 −pF

Coes Output Capacitance −200 −pF

Cres Reverse Transfer Capacitance −60 −pF

FGH80N60FD2

www.onsemi.com

ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) (continued)

Symbol UnitMax.Typ.Min.Test ConditionsParameter

SWITCHING CHARACTERISTICS

Td(on) Turn−On Delay Time VCC = 400 V, IC = 40 A,

RG = 10 W, VGE = 15 V,

Inductive Load, TC = 25°C

−21 −ns

TrRise Time −56 −ns

Td(off) Turn−Off Delay Time −126 −ns

TfFall Time −50 100 ns

Eon Turn−On Switching Loss −1 1.5 mJ

Eoff Turn−Off Switching Loss −0.52 0.78 mJ

Ets Total Switching Loss −1.52 2.28 mJ

Td(on) Turn−On Delay Time VCC = 400 V, IC = 40 A,

RG = 10 W, VGE = 15 V,

Inductive Load, TC = 125°C

−20 −ns

TrRise Time −54 −ns

Td(off) Turn−Off Delay Time −131 −ns

TfFall Time −70 −ns

Eon Turn−On Switching Loss −1.1 −mJ

Eoff Turn−Off Switching Loss −0.78 −mJ

Ets Total Switching Loss −1.88 −mJ

QgTotal Gate Charge VCE = 400 V, IC = 40 A,

VGE = 15 V

−120 −nC

Qge Gate−Emitter Charge −14 −nC

Qgc Gate−Collector Charge −58 −nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

ELECTRICAL CHARACTERISTICS OF THE DIODE (TC = 25°C unless otherwise noted)

Symbol Parameter Test Conditions Min Typ Max Unit

VFM Diode Forward Voltage IF = 15 A TC = 25°C−1.2 1.5 V

TC = 125°C−1.0 −

Trr Diode Reverse Recovery Time IF = 15 A,

diF/dt = 200 A/ms

TC = 25°C−61 −ns

TC = 125°C−125 −

Irr Diode Reverse Recovery Current TC = 25°C−4.8 −A

TC = 125°C−8.4 −

Qrr Diode Reverse Recovery Charge TC = 25°C−146 −nC

TC = 125°C−525 −

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

FGH80N60FD2

www.onsemi.com

TYPICAL PERFORMANCE CHARACTERISTICS

Figure 1. Typical Output Characteristics Figure 2. Typical Saturation Voltage

Characteristics

Figure 3. Typical Saturation

Voltage Characteristics Figure 4. Transfer Characteristics

Figure 5. Saturation Voltage vs. Case

Temperature at Variant Current Level Figure 6. Saturation Voltage vs. VGE

Collector−Emitter Voltage, VCE (V)

Collector Current, IC (A)

Collector−Emitter Voltage, VCE (V)

Collector Current, IC (A)

Gate−Emitter Voltage,VGE (V)

Collector Current, IC (A)

Case Temperature, TC (5C)

Collector−Emitter Voltage, VCE (V)

Gate−Emitter Voltage, VGE (V)

Collector−Emitter Voltage, VCE (V)

Collector Current, IC (A)

0246810

120

160

20V

TC = 25oC

12V

15V

10V

VGE = 8V

0246810

20V

TC = 125oC

12V

15V

10V

VGE = 8V

120

160

0 1 2 3 4 5 6

120

160

Common Emitter

VGE = 15V

TC = 25oC

TC = 125oC

24681012

120

160

Common Emitter

VCE = 20V

TC = 25oC

TC = 125oC

25 50 75 100 125

1.0

1.5

2.0

2.5

3.0

3.5

80A

40A

20A

Common Emitter

VGE = 15V

4 8 121620

IC = 20A

40A

80A

Common Emitter

TC = 25oC

FGH80N60FD2

www.onsemi.com

TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

Figure 7. Saturation Voltage vs. VGE Figure 8. Capacitance Characteristics

Figure 9. Gate Charge Characteristics Figure 10. SOA Characteristics

Figure 11. Turn−Off Switching SOA

Characteristics

Figure 12. Turn−On Characteristics vs.

Gate Resistance

Gate−Emitter Voltage, VGE (V)

Collector−Emitter Voltage, VCE (V)

Collector Current, IC (A)

Collector−Emitter Voltage, VCE (V)

Collector−Emitter Voltage, VGE (V)

Capacitance (pF)

Gate Charge, Qg (nC)

Gate−Emitter Voltage, VGE (V)

Switching Time (ns)

Gate Resistance, RG (W)

4 8 121620

IC = 20A

40A

80A

Common Emitter

TC = 125oC

0.1110

1000

2000

3000

4000

5000

Common Emitter

VGE = 0V, f = 1MHz

TC = 25oC

Crss

Coss

Ciss

0 50 100 150

Common Emitter

TC = 25oC

300V

200V

Vcc = 100V

1 10 100 1000

0.01

0.1

100

1ms

10 ms

100

400

Single Nonrepetitive

Pulse TC=255C

Curves must be derated

linearly with increase

in temperature

1 10 100 1000

100

Safe Operating Area

VGE = 20V, TC = 100oC

200 200

Common Emitter

VCC = 400V, V

GE = 15V

IC = 40A

TC = 25oC

TC = 125oC

td(on)

0 1020304050

100

FGH80N60FD2

www.onsemi.com

TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

Figure 13. Turn−Off Characteristics vs.

Gate Resistance

Figure 14. Turn−On Characteristics vs.

Collector Current

Figure 15. Turn−Off Characteristics vs.

Collector Current

Figure 16. Switching Loss vs.

Gate Resistance

Figure 17. Switching Loss vs. Collector Current

Switching Time (ns)

Gate Resistance, RG (W)

Switching Time (ns)

Collector Current, IC (A)

Switching Time (ns)

Collector Current, IC (A)

Switching Loss (mJ)

Gate Resistance, RG (W)

Switching Loss (mJ)

Collector Current, IC (A)

0 1020304050

100

1000

Common Emitter

VCC = 400V, V

GE = 15V

IC = 40A

TC = 25oC

TC = 125

td(off)

2000

20 40 60 80

100

Common Emitter

VGE = 15V, RG = 10

TC = 25oC

TC = 125oC

td(on)

200

20 40 60 80

100

500

Common Emitter

VGE = 15V, R

G = 10

TC = 25oC

TC = 125oC

td(off)

0 1020304050

0.3

Common Emitter

VCC = 400V, VGE = 15V

IC = 40A

TC = 25oC

TC = 125oCEon

Eoff

20 40 60 80

0.1

Common Emitter

VGE = 15V, RG = 10

TC = 25oC

TC = 125oC

Eon

Eoff

FGH80N60FD2

www.onsemi.com

TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

Figure 18. Forward Characteristics

Forward Current, IF (A)

Forward Voltage, VF (V)

Thermal Response (Zthjc)

Rectangular Pulse Duration (sec)

Figure 19. Transient Thermal Impedance of IGBT

1E−51E−41E−3 0.01 0.1 1

1E−3

0.01

0.1

0.2

0.5

0.1

0.05

0.01

0.02

single pulse

Duty Factor, D = t1/t2

Peak Tj = Pdm x Zthjc + TC

PDM

Figure 20. Stored Charge

Stored Recovery Charge, Qrr (nC)

di/dt, (A/ms)

TC = 25oC

TC = 125oC

0123

0.1

100 200 300 400

200

400

600

800

1000

125oC

25oC

Figure 21. Reverse Recovery Time

Reverse Recovery Time, trr (ns)

di/dt, (A/ms)

Figure 22. Reverse Recovery Current

Reverse Recovery Current. Irr (A)

di/dt, (A/ms)

100

120

140

160

125oC

25oC

100 200 300 400

125oC

25oC

100 200 300 400

TO−247−3LD SHORT LEAD

CASE 340CK

ISSUE A

DATE 31 JAN 2019

XXXX = Specific Device Code

A = Assembly Location

Y = Year

WW = Work Week

ZZ = Assembly Lot Code

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may

or may not be present. Some products may

not follow the Generic Marking.

GENERIC

MARKING DIAGRAM*

AYWWZZ

XXXXXXX

(3X) b

(2X) b2

(2X) e

0.25 MBAM

DIM MILLIMETERS

MIN NOM MAX

A 4.58 4.70 4.82

A1 2.20 2.40 2.60

A2 1.40 1.50 1.60

b 1.17 1.26 1.35

b2 1.53 1.65 1.77

b4 2.42 2.54 2.66

c 0.51 0.61 0.71

D 20.32 20.57 20.82

D1 13.08 ~ ~

D2 0.51 0.93 1.35

E 15.37 15.62 15.87

E1 12.81 ~ ~

E2 4.96 5.08 5.20

e ~ 5.56 ~

L 15.75 16.00 16.25

L1 3.69 3.81 3.93

P 3.51 3.58 3.65

P1 6.60 6.80 7.00

Q 5.34 5.46 5.58

S 5.34 5.46 5.58

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically

disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the

rights of others.

98AON13851G

DOCUMENT NUMBER:

DESCRIPTION:

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 1 OF 1

TO−247−3LD SHORT LEAD

www.onsemi.com

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

TECHNICAL SUPPORT

North American Technical Support:

Voice Mail: 1 800−282−9855 Toll Free USA/Canada

Phone: 011 421 33 790 2910

LITERATURE FULFILLMENT:

Email Requests to: orderlit@onsemi.com

ON Semiconductor Website: www.onsemi.com

Europe, Middle East and Africa Technical Support:

Phone: 00421 33 790 2910

For additional information, please contact your local Sales Representative

◊