VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series
www.vishay.com Vishay Semiconductors
Revision: 17-Aug-17 2Document Number: 94353
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Note
(1) Available with dV/dt = 1000 V/μs, to complete code add S90 i. e. 113MT160KBS90
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES
5.MT...K
VALUES
9.MT...K
VALUES
11.MT...K UNITS
Maximum DC output current at
case temperature IO120° rect. conduction angle 55 90 110 A
85 85 85 °C
Maximum peak, one-cycle
forward, non-repetitive on state
surge current
ITSM
t = 10 ms No voltage
reapplied
Initial TJ = TJ max.
390 950 1130
A
t = 8.3 ms 410 1000 1180
t = 10 ms 100 % VRRM
reapplied
330 800 950
t = 8.3 ms 345 840 1000
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
770 4525 6380
A2s
t = 8.3 ms 700 4130 5830
t = 10 ms 100 % VRRM
reapplied
540 3200 4510
t = 8.3 ms 500 2920 4120
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 7700 45 250 63 800 A2s
Low level value of threshold
voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ maximum 1.17 1.09 1.04
V
High level value of threshold
voltage VT(TO)2 (I > x IT(AV)), TJ maximum 1.45 1.27 1.27
Low level value on-state slope
resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ maximum 12.40 4.10 3.93
m
High level value on-state slope
resistance rt2 (I > x IT(AV)), TJ maximum 11.04 3.59 3.37
Maximum on-state voltage drop VTM Ipk = 150 A, TJ = 25 °C, tp = 400 μs single junction 2.68 1.65 1.57 V
Maximum non-repetitive
rate of rise of turned on current dI/dt TJ = 25 °C, from 0.67 VDRM, ITM = x IT(AV),
Ig = 500 mA, tr < 0.5 μs, tp > 6 μs 150 A/μs
Maximum holding current IHTJ = 25 °C, anode supply = 6 V, resistive load,
gate open circuit 200 mA
Maximum latching current ILTJ = 25 °C, anode supply = 6 V, resistive load 400
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES
5.MT...K
VALUES
9.MT...K
VALUES
11.MT...K UNITS
RMS isolation voltage VISOL TJ = 25 °C all terminal shorted, f = 50 Hz, t = 1 s 4000 V
Maximum critical rate of rise of
off-state voltage dV/dt (1) TJ = TJ maximum, linear to 0.67 VDRM,
gate open circuit 500 V/μs
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES
5.MT...K
VALUES
9.MT...K
VALUES
11.MT...K UNITS
Maximum peak gate power PGM
TJ = TJ maximum
10 W
Maximum average gate power PG(AV) 2.5
Maximum peak gate current IGM 2.5 A
Maximum peak negative
gate voltage - VGT 10
V
Maximum required DC gate
voltage to trigger VGT
TJ = - 40 °C
Anode supply = 6 V,
resistive load
4.0
TJ = 25 °C 2.5
TJ = 125 °C 1.7
Maximum required DC gate
current to trigger IGT
TJ = - 40 °C 270
mATJ = 25 °C 150
TJ = 125 °C 80
Maximum gate voltage
that will not trigger VGD
TJ = TJ maximum, rated VDRM applied
0.25 V
Maximum gate current
that will not trigger IGD 6mA