A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCEO IC = 200 mA 35 V
BVCES IC = 200 mA 60 V
BVEBO IE = 10 mA 4.0 V
ICBO VCB = 30 V 1.0 mA
hFE VCE = 5.0 V IC = 500 mA 5.0 ---
Cob VCB = 30 V f = 1.0 MHz 30 pF
Cib VEB = 0.5 V f = 1.0 MHz 96 pF
POUT VCE = 28 V f = 136 MHz 20 23 W
GP
ηC
VCE = 28 V IC = 1.19 A f = 400 MHz 4.6
60 6.1 dB
%
NPN SILICON RF POWER TRANSISTOR
PT6709
DESCRIPTION:
The ASI PT6709 is a planar transistor
designed primarily for UHF Class-C,
28 V transmitters. up to 400 MHz.
FEATURES:
• PG = 4.6 dB min. at 20 W/400 MHz
• ηC = 60 % min. at 20W/400 MHz
• Omnigold™ Metalization System
• Emitter Ballasting
MAXIMUM RATINGS
IC 3.0 A
VCBO 60 V
VCEO 35 V
VEBO 4.0 V
PDISS 30 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
θJC 5.8 °C/W
PACKAGE STYLE .380 2L FLG
E
E
C
B
