TLP130(GR,F) - TOSHIBA - Product.Network

TLP130

1 2019-06-10

Toshiba Electronic Devices & Storage Corporation

TOSHIBA Photocoupler IRED & Photo-Transistor

TLP130

Programmable Controllers

AC / DC-Input Module

Telecommunication

The TOSHIBA mini flat coupler TLP130 is a small outline coupler, suitable for

surface mount assembly.

TLP130 consists of a photo transistor, optically coupled to two infrared

emitting diodes connected inverse parallel, and operate directly by AC input

current.

• Collector-emitter voltage: 80 V (min)

• Current transfer ratio: 50 % (min)

Rank GB: 100 % (min)

• Isolation voltage: 3750 Vrms (min)

• UL-recognized: UL 1577, File No.E67349

• cUL-recognized: CSA Component Acceptance Service No.5A

File No.E67349

• Current transfer ratio

Classification

Current Transfer Ratio (%) (IC/IF)

Marking of

Classification

IF = ±5mA, VCE = 5V, Ta = 25°C

Min Max

Standard 50 600 Blank, GB

Rank GB 100 600 GB

Note: Application type name for certification test,

please use standard product type name, i.e.

TLP130(GB): TLP130

Pin Configurations (top view)

1 : Anode, Cathode

3 : Cathode, Anode

4 : Emitter

5 : Collector

6 : Base

Unit:

TOSHIBA

11-4C2

Weight: 0.09 g (typ.)

Start of commercial production

1988-04

TLP130

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Toshiba Electronic Devices & Storage Corporation

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

LED

Forward current IF(RMS) 50 mA

Forward current derating (Ta≥53°C) ΔIF/°C −0.7 mA/°C

Peak forward current (100 μs pulse,

100pps) IFP 1 A

Diode power dissipation PD 100 mW

Diode power dissipation derating (Ta ≥ 53°C)

PD/°C -1.39 mW/°C

Junction temperature Tj 125 °C

Detector

Collector−emitter voltage VCEO 80 V

Collector−base voltage VCBO 80 V

Emitter−collector voltage VECO 7 V

Emitter−base voltage VEBO 7 V

Collector current IC 50 mA

Peak collector current (10 ms pulse, 100 pps) ICP 100 mA

Power dissipation PC 150 mW

Power dissipation derating (Ta ≥ 25°C) ΔPC/°C −1.5 mW/°C

Junction temperature Tj 125 °C

Storage temperature range Tstg −55 to 125 °C

Operating temperature range Topr −55 to 100 °C

Lead soldering temperature (10 s) Tsol 260 °C

Total package power dissipation PT 200 mW

Total package power dissipation derating (Ta ≥ 25°C) ΔPT/°C −2.0 mW/°C

Isolation voltage (AC, 60 s, R.H. ≤ 60 %) (Note 1) BVS 3750 Vrms

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc.).

Note 1: Device considered a two terminal device: Pins 1 and 3 shorted together and pins 4, 5 and 6 shorted together.

Recommended Operating Conditions

Characteristics Symbol Min Typ. Max Unit

Supply voltage VCC ― 5 48 V

Forward current IF(RMS) ― 16 25 mA

Collector current IC ― 1 10 mA

Operating temperature Topr -25 ― 85 °C

Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the

device. Additionally, each item is an independent guideline respectively. In developing designs using this

product, please confirm specified characteristics shown in this document.

TLP130

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Toshiba Electronic Devices & Storage Corporation

Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

LED

Forward voltage VF IF = ±10 mA 1.0 1.15 1.3 V

Capacitance CT V = 0 V, f = 1 MHz ― 60 ― pF

Detector

Collector-emitter

breakdown voltage

V(BR)CEO IC = 0.5 mA 80 ― ― V

Emitter-collector

breakdown voltage

V(BR)ECO IE = 0.1 mA 7 ― ― V

Collector-base breakdown voltage V(BR)CBO IC = 0.1 mA 80 ― ― V

Emitter-base breakdown voltage V(BR)EBO IE = 0.1 mA 7 ― ― V

Collector dark current ICEO

VCE = 48 V ― 10 100 nA

VCE = 48 V, Ta = 85 °C ― 2 50 μA

Collector dark current ICER VCE = 48 V, Ta = 85 °C

RBE = 1 MΩ ― 0.5 10 μA

Collector dark current ICBO VCB = 10 V ― 0.1 ― nA

DC forward current gain hFE VCE = 5 V, IC = 0.5 mA ― 400 ― ―

Capacitance collector to emitter CCE V = 0 V, f = 1 MHz ― 10 ― pF

Coupled Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Current transfer ratio IC/IF

IF = ±5 mA, VCE = 5 V

Rank GB

50 ― 600

100 ― 600

Saturated CTR IC/IF(sat)

IF = ±1 mA, VCE = 0.4 V

Rank GB

― 60 ―

30 ― ―

Base photo−current IPB IF = ±5 mA, VCB = 5 V ― 10 ― μA

Collector-emitter

saturation voltage VCE(sat)

IC = 2.4 mA, IF = ±8 mA ― ― 0.4

IC = 0.2 mA, IF = ±1 mA

Rank GB

― 0.2 ―

― ― 0.4

Off−state collector current IC(off) IF = ±0.7 mA, VCE = 48 V ― 1 10 μA

CTR symmetry IC(ratio) IC(IF = −5 mA) / IC(IF = 5 mA)

(Note 1) 0.33 ― 3 ―

Note 1: IC(ratio) =

F1,

F2,

IC2

IC1

IF2

IF1

TLP130

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Toshiba Electronic Devices & Storage Corporation

Isolation Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Capacitance input to output CS VS = 0 V, f = 1 MHz ― 0.8 ― pF

Isolation resistance RS VS = 500 V, R.H. ≤ 60 % 5×10

― Ω

Isolation voltage BVS AC, 60 s 3750 ― ― Vrms

Switching Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Rise time tr

VCC = 10 V, IC = 2 mA

RL = 100 Ω

― 2 ―

μs

Fall time tf ― 3 ―

Turn-on time ton ― 3 ―

Turn-off time toff ― 3 ―

Turn-on time tON RL = 1.9 kΩ (Fig.1)

RBE = OPEN

VCC = 5 V, IF = ±16 mA

― 2 ―

μs

Storage time ts ― 25 ―

Turn-off time tOFF ― 40 ―

Turn-on time tON RL = 1.9 kΩ (Fig.1)

RBE = 220 kΩ

VCC = 5 V, IF = ±16 mA

― 2 ―

μs

Storage time ts ― 20 ―

Turn-off time tOFF ― 30 ―

Fig. 1 Switching time test circuit

IF VCC

VCE

RBE

VCC

VCE

tON tOFF

4.5V

0.5V

TLP130

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Toshiba Electronic Devices & Storage Corporation

IF – Ta

Ambient temperature Ta (°C)

Allowable forward current

IF (mA)

100

-20

0 20 40 60 80 120 100

PC – Ta

Ambient temperature Ta (°C)

Allowable collector power

dissipation PC (mW)

200

-20

160

120

0 20 40 60 80 120 100

∆VF / ∆Ta – IF

Forward current IF (mA)

Forward voltage temperature

Coefficient ∆VF / ∆Ta (mV / °C)

−3.2

−0.4

0.1

−0.8

−2.8

−2.0

−1.6

−1.2

0.3

−2.4

1 5 50 0.5 3 10 30

IF – VF

Forward voltage VF (V)

Forward current IF (mA)

100

0.1

0.6

0.5

0.8 1.0 1.2 1.4 1.6 1.8

0.3

Ta = 25°C

IFP – VFP

Pulse forward voltage VFP (V)

Pulse forward current IFP (mA)

1000

1.0 1.4 1.8 2.2 2.6 3.0

0.6

500

300

100

Pulse width ≤ 10μs

Repetitive

Frequency = 100Hz

Ta = 25°C

IFP – DR

Duty cycle ratio DR

Pulse forward current

IFP (mA)

3000

1000

300

10−3

500

10−2 10−1 100

100

Pulse width ≤ 100μs

Ta = 25°C

NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,

unless otherwise noted.

TLP130

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Toshiba Electronic Devices & Storage Corporation

Forward current IF (mA)

IC – IF

Collector current IC (mA)

100

0.1

0.3

0.5

3 10 100 1 5 50 30

VCE = 10V

VCE = 5V

VCE = 0.4V

Ta = 25°C

Sample A

Sample B

IC – VCE

Collector–emitter voltage VCE (V)

Collector current IC (mA)

20mA

2 4 6 8 10

Ta = 25°C

50mA

30mA

15mA

10mA

PC(MAX)

IF = 5mA

IC / IF – IF

Forward current IF (mA)

Current transfer ratio IC / IF (%)

1000

0.3

300

100

0.5

500

3 10 100 1 5 30 50

Sample B

Ta = 25°C

VCE = 10V

VCE = 5V

VCE = 0.4V

Sample A

IC – VCE

Collector–emitter voltage VCE (V)

Collector current IC (mA)

0.2 0.4 0.6 0.8 1.0

IF = 50mA

40mA

30mA

20mA

10mA

5mA

2mA

Ta = 25°C

IC – IF at RBE

Forward current IF (mA)

Collector current IC (mA)

100

0.1

0.3

3 10 100 1 5 30 50

0.3

0.5

VCC

RBE

RBE = ∞ 500kΩ 100kΩ

50kΩ

Ta = 25°C

VCE = 5V

IPB – IF

Forward current IF (mA)

Base photo current IPB (μA)

300

0.1

0.5

100

3 10 100 1 5 30 50

0.3

Ta = 25°C

VCB

VCB = 0V

VCB = 5V

NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,

unless otherwise noted.

TLP130

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Toshiba Electronic Devices & Storage Corporation

VCE(sat) – Ta

Ambient temperature Ta (°C)

Collector–emitter saturation

Voltage VCE(sat) (V)

0.24

−40

0.20

0.16

0.12

0.04

−20 0 20 40 60 100 80

0.08

IF = 5mA

Ic = 1mA

101

10−4

0 20 40 60 80 100 120

100

10−1

10−2

10−3

ICEO – Ta

Ambient temperature Ta (°C)

Collector dark current ICEO (μA)

VCE = 48V

10V

24V

IC – Ta

Ambient temperature Ta (°C)

Collector current IC (mA)

100

0.1

-20

0 20 40 60 80 100

0.3

0.5

10mA

5mA

0.5mA

1mA

VCE = 5V

IF = 25mA

Switching Time – RL

Load resistance RL (kΩ)

Switching time (μs)

300

100

3 10 30 50 100 5

tOFF

tON

Ta = 25°C

IF = 16mA

VCC = 5V

RBE = 220kΩ

NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,

unless otherwise noted.

TLP130

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Toshiba Electronic Devices & Storage Corporation

Switching Time – RL

Load resistance RL (kΩ)

Switching time (μs)

1000

500

300

100

3 10 30 50 100

Ta = 25°C

IF = 16mA

VCC = 5V

tOFF

tON

Switching Time – RBE

Base-emitter resistance RBE (Ω)

Switching time (μs)

1000

100k

500

300

100

300k 1M 3M ∞

tOFF

tON

Ta = 25°C

IF = 16mA

VCC = 5V

RL = 1.9kΩ

NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,

unless otherwise noted.

TLP130

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Toshiba Electronic Devices & Storage Corporation

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