TLP130 TOSHIBA Photocoupler IRED & Photo-Transistor TLP130 Programmable Controllers AC / DC-Input Module Telecommunication Unit: mm The TOSHIBA mini flat coupler TLP130 is a small outline coupler, suitable for surface mount assembly. TLP130 consists of a photo transistor, optically coupled to two infrared emitting diodes connected inverse parallel, and operate directly by AC input current. * Collector-emitter voltage: 80 V (min) * Current transfer ratio: 50 % (min) Rank GB: 100 % (min) * Isolation voltage: 3750 Vrms (min) * UL-recognized: UL 1577, File No.E67349 * cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 * Current transfer ratio TOSHIBA Current Transfer Ratio (%) (IC/IF) Classification IF = 5mA, VCE = 5V, Ta = 25C Weight: 0.09 g (typ.) Marking of Classification Min Max Standard 50 600 Blank, GB Rank GB 100 600 GB 11-4C2 Pin Configurations (top view) Note: Application type name for certification test, please use standard product type name, i.e. TLP130(GB): TLP130 1 6 5 3 4 1 : Anode, Cathode 3 : Cathode, Anode 4 : Emitter 5 : Collector 6 : Base Start of commercial production 1988-04 (c) 2019 Toshiba Electronic Devices & Storage Corporation 1 2019-06-10 TLP130 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit IF(RMS) 50 mA IF/C -0.7 mA/C IFP 1 A PD 100 mW PD/C -1.39 mW/C Tj 125 C Collector-emitter voltage VCEO 80 V Collector-base voltage VCBO 80 V Emitter-collector voltage VECO 7 V Emitter-base voltage VEBO 7 V IC 50 mA ICP 100 mA PC 150 mW PC/C -1.5 mW/C Tj 125 C Storage temperature range Tstg -55 to 125 C Operating temperature range Topr -55 to 100 C Tsol 260 C PT 200 mW PT/C -2.0 mW/C BVS 3750 Vrms Forward current LED Forward current derating (Ta53C) (100 s pulse, Peak forward current 100pps) Diode power dissipation Diode power dissipation derating (Ta 53C) Detector Junction temperature Collector current Peak collector current (10 ms pulse, 100 pps) Power dissipation Power dissipation derating (Ta 25C) Junction temperature Lead soldering temperature (10 s) Total package power dissipation Total package power dissipation derating Isolation voltage (Ta 25C) (AC, 60 s, R.H. 60 %) (Note 1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc.). Note 1: Device considered a two terminal device: Pins 1 and 3 shorted together and pins 4, 5 and 6 shorted together. Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit Supply voltage VCC 5 48 V Forward current IF(RMS) 16 25 mA Collector current IC 1 10 mA Topr -25 85 C Operating temperature Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. (c) 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-06-10 TLP130 Electrical Characteristics (Ta = 25C) Detector LED Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Capacitance CT V = 0 V, f = 1 MHz 60 pF Collector-emitter breakdown voltage V(BR)CEO IC = 0.5 mA 80 V Emitter-collector breakdown voltage V(BR)ECO IE = 0.1 mA 7 V Collector-base breakdown voltage V(BR)CBO IC = 0.1 mA 80 V Emitter-base breakdown voltage V(BR)EBO IE = 0.1 mA 7 V VCE = 48 V 10 100 nA VCE = 48 V, Ta = 85 C 2 50 A Collector dark current ICEO Collector dark current ICER VCE = 48 V, Ta = 85 C RBE = 1 M 0.5 10 A Collector dark current ICBO VCB = 10 V 0.1 nA DC forward current gain hFE VCE = 5 V, IC = 0.5 mA 400 Capacitance collector to emitter CCE V = 0 V, f = 1 MHz 10 pF Unit Coupled Electrical Characteristics (Ta = 25C) Characteristics Current transfer ratio Symbol IC/IF Saturated CTR IC/IF(sat) Base photo-current IPB Collector-emitter saturation voltage VCE(sat) Test Condition Min Typ. Max IF = 5 mA, VCE = 5 V 50 600 100 600 60 30 IF = 5 mA, VCB = 5 V 10 IC = 2.4 mA, IF = 8 mA 0.4 IC = 0.2 mA, IF = 1 mA 0.2 0.4 1 10 A 0.33 3 Rank GB IF = 1 mA, VCE = 0.4 V Rank GB Rank GB Off-state collector current CTR symmetry Note 1: IC(ratio) = IC(off) IC(ratio) IF = 0.7 mA, VCE = 48 V IC(IF = -5 mA) / IC(IF = 5 mA) (Note 1) IC2 (IF = IF2, VCE = 5V) IC1(IF = IF1, VCE = 5V) IF1 IF2 (c) 2019 Toshiba Electronic Devices & Storage Corporation 3 % % A V IC1 IC2 VCE 2019-06-10 TLP130 Isolation Characteristics (Ta = 25C) Characteristics Symbol Capacitance input to output CS Test Condition VS = 0 V, f = 1 MHz Isolation resistance RS VS = 500 V, R.H. 60 % Isolation voltage BVS AC, 60 s Min Typ. Max Unit 0.8 pF 5x1010 1014 3750 Vrms Min Typ. Max Unit 2 3 3 3 2 25 40 Switching Characteristics (Ta = 25C) Characteristics Symbol Rise time tr Fall time tf Test Condition VCC = 10 V, IC = 2 mA RL = 100 Turn-on time ton Turn-off time toff Turn-on time tON Storage time ts Turn-off time tOFF Turn-on time tON Storage time ts Turn-off time tOFF RL = 1.9 k (Fig.1) RBE = OPEN VCC = 5 V, IF = 16 mA RL = 1.9 k (Fig.1) RBE = 220 k VCC = 5 V, IF = 16 mA 2 20 30 s s s Fig. 1 Switching time test circuit IF RL RBE VCC VCE IF ts VCE tON (c) 2019 Toshiba Electronic Devices & Storage Corporation 4 VCC 4.5V 0.5V tOFF 2019-06-10 TLP130 IF - Ta PC - Ta 200 Allowable collector power dissipation PC (mW) Allowable forward current IF (mA) 100 80 60 40 20 0 -20 0 40 20 60 80 100 160 120 80 40 0 -20 120 0 40 20 IFP - DR IF (mA) 300 Forward current Pulse forward current IFP (mA) 500 100 50 30 10 10-3 10 -2 Ta = 25C 50 Ta = 25C 10 120 I F - VF 100 Pulse width 100s 1000 100 80 Ambient temperature Ta (C) Ambient temperature Ta (C) 3000 60 10 -1 0 Duty cycle ratio DR 30 10 5 3 1 0.5 0.3 0.1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.6 3.0 Forward voltage VF (V) IFP - VFP -2.8 (mA) -2.4 IFP 1000 -2.0 Pulse forward current Forward voltage temperature Coefficient VF / Ta (mV / C) VF / Ta - IF -3.2 -1.6 -1.2 -0.8 -0.4 0.1 0.3 0.5 1 3 Forward current 5 10 IF (mA) 30 50 500 300 100 50 30 10 Pulse width 10s 5 Repetitive 3 1 0.6 Frequency = 100Hz Ta = 25C 1.0 1.4 1.8 2.2 Pulse forward voltage VFP (V) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. (c) 2019 5 Toshiba Electronic Devices & Storage Corporation 2019-06-10 TLP130 IC - VCE IC - VCE 30 Ta = 25C IC (mA) 50mA 40 30mA 20mA 15mA 30 Collector current Collector current IC (mA) 50 10mA 0 PC(MAX) 20 IF = 5mA 10 0 0 2 6 4 8 Ta = 25C IF = 50mA 40mA 30mA 20 20mA 10mA 10 5mA 2mA 0 0 10 0.2 IC - IF Ta = 25C 30 10 Sample A 5 3 Sample B 1 VCE = 10V 0.5 VCE = 5V 0.3 VCE = 0.4V 0.1 0.3 0.5 1 3 5 10 Forward current 30 50 VCE = 10V Ta = 25C VCE = 5V VCE = 0.4V 500 300 Sample A 100 Sample B 50 30 0.3 100 0.5 1 3 IC - IF at RBE VCC IF A 1 0.1 0.1 50k 500k 0.3 0.5 100k 1 3 5 Forward current 10 30 50 100 IF (mA) (A) 3 IPB 5 100 30 Base photo current 10 RBE (mA) Collector current IC 30 RBE = 10 30 50 100 IF (mA) IPB - IF 300 Ta = 25C 50 VCE = 5V 0.3 5 Forward current IF (mA) 100 0.5 1.0 IC / IF - IF 1000 Current transfer ratio IC / IF (%) Collector current IC (mA) 50 0.8 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) 100 0.6 0.4 10 Ta = 25C VCB IF VCB = 0V VCB = 5V A 3 1 0.3 0.1 0.1 0.3 0.5 1 3 Forward current 5 10 30 50 100 IF (mA) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. (c) 2019 Toshiba Electronic Devices & Storage Corporation 6 2019-06-10 TLP130 ICEO - Ta VCE(sat) - Ta 101 Collector-emitter saturation Voltage VCE(sat) (V) 0.24 Collector dark current ICEO (A) 100 VCE = 48V 24V 10V 10-1 5V 10-2 IF = 5mA Ic = 1mA 0.20 0.16 0.12 0.08 0.04 0 -40 -20 20 0 40 80 60 100 Ambient temperature Ta (C) 10-3 10-4 0 20 60 40 100 80 120 Ambient temperature Ta (C) IC - Ta 100 Switching Time - RL VCE = 5V Ta = 25C 300 IF = 16mA IF = 25mA 50 30 VCC = 5V RBE = 220k 10mA 5mA 10 Switching time (s) Collector current IC (mA) 100 5 3 1mA 1 50 tOFF 30 ts 10 5 0.5 0.5mA 3 0.3 0.1 tON -20 0 20 40 60 80 100 1 1 3 5 10 Load resistance RL Ambient temperature Ta (C) 30 50 100 (k) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. (c) 2019 Toshiba Electronic Devices & Storage Corporation 7 2019-06-10 TLP130 Switching Time - RBE 1000 Switching Time - RL 1000 Ta = 25C 500 Ta = 25C IF = 16mA IF = 16mA VCC = 5V 500 VCC = 5V 300 100 100 Switching time (s) Switching time (s) RL = 1.9k 300 tOFF 50 ts 30 ts 50 30 10 10 5 5 3 tOFF 3 tON 1 100k 300k 1M tON 3M Base-emitter resistance RBE 1 1 () 3 5 10 Load resistance RL 30 50 100 (k) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. (c) 2019 Toshiba Electronic Devices & Storage Corporation 8 2019-06-10 TLP130 RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as "TOSHIBA". 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