T2322BG - LITTELFUSE - Product.Network

Speciﬁcations are subject to change without notice.

Revised: 07/15/19

Thyristors

Surface Mount – 200V > T2322B

• Very High Gate Sensitivity

• Low On-State Voltage at

High Current Levels

• Glass-Passivated Chip for

Stability

• Small, Rugged Thermopad

Construction for Low

Thermal Resistance, High

Heat Dissipation and

Durability

• Pb−Free Package is

Available

Features

Designed primarily for ac power switching. The gate

sensitivity of these triacs permits the use of economical

transistorized or integrated circuit control circuits, and it

enhances their use in low-power phase control and load-

switching applications.

Description

T2322B

Functional Diagram

MT1

MT2

Additional Information

Samples

Resources

Datasheet

Pin Out

TO 225AA

CASE 77

STYLE 2

Speciﬁcations are subject to change without notice.

Revised: 07/15/19

Thyristors

Surface Mount – 200V > T2322B

Rating Symbol Value Unit

Peak Repetitive Off-State Voltage (Note 1)

(TJ = 25 to 110°C, Gate Open) VDRM,

VRRM

200 V

On-State RMS Current (TC = 70°C)(Full Cycle Sine Wave 50 to 60 Hz) IT (RMS) 2.5 A

Peak Non−Repetitive Surge Current

(One Full Cycle, Sine Wave 60 Hz, TC = 70°C) ITSM 25 A

Circuit Fusing Considerations (t = 8.3 ms) I2t 2.6 A2s

Peak Gate Power (Pulse Width ≤ 10 sec, TC = 70°C) PGM 10 W

Average Gate Power (t = 8.3 msec, TA = 25°C) PGM (AV) 0.5 W

Peak Gate Current (Pulse Width = 10 µs, TC = 70°C) IGM 0.5 A

Operating Junction Temperature Range @ Rated VRRM and VDRM TJ-40 to +110 °C

Storage Temperature Range Tstg -40 to +150 °C

Mounting Torque (6-32 Screw) (Note 2) _ 8.0 in. lb.

Maximum Ratings (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit

Thermal Resistance, Junction−to−Ambient PCB Mounted RƟJA 3.5 °C/W

Thermal Resistance, Junction−to−Tab Measured on MT2 Tab Adjacent to Epoxy RƟJT 60 °C/W

Maximum Device Temperature for Soldering Purposes for 10 Secs Maximum TL260 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.

Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative

potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

2. Torque rating applies with use of torque washer (Shakeproof WD19523 or equivalent). Mounting Torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance.

Main terminal 2 and heat-sink contact pad are common.

Thermal Characteristics

Electrical Characteristics - ON (TJ = 25°C unless otherwise noted; Electricals apply in both directions)

Characteristic Symbol Min Ty p Max Unit

Peak Forward On-State Voltage (Note 3) (ITM = ±10 A) VTM −1.7 2.2 V

Gate Trigger Current (Continuous dc)

(VD = 12 V, RL = 100 Ω, All Quadrants) IGT _ _ 10 mA

Gate Trigger Voltage (Continuous dc)

(VD = 12 Vdc, RL = 100 Ω, TC = 25°C) VGT –1.0 2.2 V

Gate Non−Trigger Voltage

(VD = 12 Vdc, RL = 100 Ω, TC = 110°C) VGD 0.15 _ _ V

Holding Current

(VD = 12 V, IT (Initiating Current) = ±200 mA, Gate Open) IH_15 30 mA

Gate Controlled Turn-On Time

(VD = Rated VDRM, ITM = 10 A pk, IG = 60 mA, tr = 0.1 sec) tgt _1.8 2.5 µs

Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted)

Characteristic Symbol Min Ty p Max Unit

Peak Repetitive Forward or Reverse Blocking Current

(VD = Rated VDRM and VRRM; Gate Open) TJ = 25°C

TJ = 110°C IDRM,

IRRM

- - 1.0 mA

- 0.2 0.75

Speciﬁcations are subject to change without notice.

Revised: 07/15/19

Thyristors

Surface Mount – 200V > T2322B

Voltage Current Characteristic of SCR

Quadrant Deﬁnitions for a Triac

Symbol Parameter

VDRM Peak Repetitive Forward Off State Voltage

IDRM Peak Forward Blocking Current

VRRM Peak Repetitive Reverse Off State Voltage

IRRM Peak Reverse Blocking Current

VTM Maximum On State Voltage

IHHolding Current

All polarities are referenced to MT1.

With in phase signals (using standard AC lines) quadrants I and III are used

MT 1

(+) IGT

GA TE

(+) MT 2

RE F

MT 1

() IGT

GA TE

(+) MT 2

RE F

MT 1

(+) IGT

GA TE

() MT 2

RE F

MT 1

() IGT

GA TE

() MT 2

RE F

MT2 NEGA TIVE

(Negative Half Cycle)

MT2 POSITIVE

(Positive Half Cycle)

VItnardauQIIItnardauQ

ItnardauQIItnardauQ

IGT +I GT

Quadrant 1

Main Terminal 2+

VTM

IDRM at VDRM

+Voltag

O State

Quadrant 3

Main Terminal 2-

+Current

On State

IRRM at VRRM

VTM

Dynamic Characteristics

Characteristic Symbol Min Ty p Max Unit

Critical Rate-of-Rise of Off State Voltage

(VD = Rated VDRM, Exponential Waveform, TC = 100°C) dv/dt 10 100 − V/µs

Critical Rate of Rise of On−State Current

(VD = Rated VDRM, ITM = 3.5 A pk, Commutating di/dt = 1.26 A/ms,

Gate Unenergized, TC = 90°C) di/dt 1.0 4.0 _ A/µs

2. Pulse Width =1.0 ms, Duty Cycle ≤ 1%.

Speciﬁcations are subject to change without notice.

Revised: 07/15/19

Thyristors

Surface Mount – 200V > T2322B

Device Package Shipping

T2322B TO225AA

500 Units/Box

T2322BG TO225AA

(Pb-Free)

YWW

2322BG

Y= Year

WW = Work Week

T2322B= Device Code

Dimensions Part Marking System

Ordering Information

TO 225AA

CASE 77

STYLE 2

Dim Inches Millimeters

Min Max Min Max

A0.102 0.110 2.60 2.80

A1 0.047 0.055 1.20 1.40

b0.028 0.034 0.70 0.86

b2 0.028 0.034 0.70 0.86

c0.019 0.022 0.49 0.57

D0.417 0.449 10.60 11.40

E0.291 0.323 7.40 8.20

e0.090 TYP 2.29 TYP

L0.551 0.630 14.00 16.00

L1 0.091 0.106 2.30 2.70

P0.118 0.134 3.00 3.40

Q0.142 0.157 3.60 4.00

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 077-01 THRU -08 OBSOLETE, NEW STANDARD 077-09.

2x e

123

Pin 4

Backside Ta

Pin Assignment

1 Cathode

2 Anode

3 Gate

4 Anode

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