MIXERS - HIGH IP3 - SMT
9
9 - 216
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC351S8 / 351S8E
v04.0408
General Description
Features
Functional Diagram
Conversion Loss: 9.0 dB
LO/IF Isolation: 35 dB
LO/RF Isolation: 42 dB
Input IP3: +25 dBm
Input IP2: +48 dBm
Electrical Speci cations, TA = +25° C
Typical Applications
GaAs MMIC HIGH IP3 DOUBLE-
BALANCED MIXER, 0.7 - 1.2 GHz
The HMC351S8 & HMC351S8E are double balanced
mixers in 8 lead plastic surface mount packages.
The passive GaAs schottky diode mixer implements
planar on chip baluns and requires no external com-
ponents. The mixer can be used as an upconverter,
down converter, or modulator. The mixer provides 9
dB conversion loss and +25 dBm IIP3 with LO drive
levels of +19 dBm. The design was optimized for low
cost high volume applications where high converter
linearity is required. The high LO suppression of 42
dB yields excellent carrier suppression for modulator
applications.
The HMC351S8 / HMC351S8E is ideal for:
• Cellular Basestations
• Cable Modems
• Fixed Wireless Access Systems
Parameter LO = +19 dBm, IF = 100 MHz Units
Min. Typ. Max.
Frequency Range, RF & LO 0.7 - 1.2 GHz
Frequency Range, IF DC - 0.3 GHz
Conversion Loss 911.5dB
Noise Figure (SSB) 911.5dB
LO to RF Isolation 36 42 dB
LO to IF Isolation 31 35 dB
RF to IF Isolation 913 dB
IP3 (Input) 22 25 dBm
IP2 (Input) 40 48 dBm
1 dB Compression (Input) 12 16 dBm
*Unless otherwise noted, all measurements performed as downconverter, IF= 100 MHz.