PTFB193404F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 - 1990 MHz Description The PTFB193404F is a 340-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 1930 to 1990 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB193404F Package H-37275-6/2 Features Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 2.6 A, = 1990 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW = 3.84 MHz 40 -20 -30 30 -35 25 IMD Low -40 20 -45 15 ACPR 10 -50 -55 5 IMD Up 0 -60 36 38 40 42 44 46 Broadband internal matching * Wide video bandwidth * Typical single-carrier WCDMA performance, 1990 MHz, 30 V - Output power = 125 W - Efficiency = 31% - Gain = 17 dB - PAR = 5.5 dB @ 0.01% CCDF - ACPR @ 5 MHz = -35 dBc * Increased negative gate-source voltage range for improved performance in Doherty amplifiers * Capable of handling 10:1 VSWR @ 30 V, 340 W (CW) output power * Integrated ESD protection * Excellent thermal stability * Pb-free and RoHS compliant 35 Efficiency Drain Efficiency (%) IMD, ACPR (dBc) -25 * 48 50 52 Average Output Power (dBm) RF Characteristics Two-carrier WCDMA Measurements (tested in Infineon test fixture) VDD = 30 V, IDQ = 2.6 A, POUT = 80 W average, = 1990 MHz, 5 MHz spacing, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 7.5 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps 17.5 19 -- dB Drain Efficiency D 28.5 30 -- % ACPR -- -31 -29 dBc Adjacent Channel Power Ratio All published data at TCASE = 25C unless otherwise indicated ESD: Electrostatic discharge sensitive device--observe handling precautions! Data Sheet - DRAFT ONLY 1 of 13 Rev. 04, 2011-02-07 PTFB193404F Confidential, Limited Internal Distribution RF Characteristics (cont.) Two-carrier WCDMA Characteristics (not subject to production test--verified by design/characterization in Infineon test fixture) VDD = 30 V, IDQ = 2.6 A, POUT = 80 W average, 1 = 1980 MHz, 2 = 1990 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 7.5 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps -- 18 -- dB Drain Efficiency D -- 29 -- % Intermodulation Distortion IMD -- -33 -- dBc Two-tone Characteristics (not subject to production test--verified by design/characterization in Infineon test fixture) VDD = 30 V, IDQ = 2.6 A, POUT = 265 W PEP, = 1990 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps -- 19 -- dB Drain Efficiency D -- 36 -- % Intermodulation Distortion IMD -- 30 -- dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 -- -- V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS -- -- 1.0 A VDS = 63 V, VGS = 0 V IDSS -- -- 10.0 A On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) -- 0.05 -- Operating Gate Voltage VDS = 30 V, IDQ = 2.6 A VGS 2.3 2.8 3.3 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS -- -- 1.0 A Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS -6 to +10 V Junction Temperature TJ 200 C Storage Temperature Range TSTG -40 to +150 C Thermal Resistance (TCASE = 70C) RJC 0.2 C/W Data Sheet - DRAFT ONLY 2 of 13 one Rev. 04, 2011-02-07 PTFB193404F Confidential, Limited Internal Distribution Ordering Information Type and Version Package Outline Package Description Shipping PTFB193404F V1 H-37275-6/2 Ceramic open-cavity, earless push-pull Tray PTFB193404F V1 R250 H-37275-6/2 Ceramic open-cavity, earless push-pull Tape & reel, 250 pcs Typical Performance (data taken in production test fixture) Two-carrier WCDMA 3GPP Drive-up Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 2.6 A, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW = 3.84 MHz VDD = 30 V, IDQ = 2.6 A, = 1990 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW = 3.84 MHz IM3 Low IM3 Up 35 19 Gain (dB) -35 -40 -45 -50 -60 36 38 40 42 44 46 48 50 20 18 Efficiency 15 10 5 16 0 36 52 Average Output Power (dBm) Data Sheet - DRAFT ONLY 25 17 1990 1960 1930 s uuu -55 30 Gain Efficiency (%) -30 IMD (dBc) 40 20 -25 38 40 42 44 46 48 50 52 Average Output Power (dBm) 3 of 13 two Rev. 04, 2011-02-07 PTFB193404F Confidential, Limited Internal Distribution Typical Performance (cont.) Two-tone Broadband Performance Two-tone Drive-up VDD = 30 V, IDQ = 2.6 A, POUT = 52 dBm VDD = 30 V, IDQ = 2.6 A,, 1 = 1989 MHz, 2 = 1990 MHz 45 0 40 -20 Efficiency IMD3 30 20 -30 -40 10 1840 Gain 1900 1960 2020 35 30 -35 25 3rd Order IMD 20 -45 15 Efficiency -55 Efficiency (%) -10 Return Loss 40 -25 IMD (dBc) 50 Return Loss (dB) / IMD (dBc) Gain (dB) / Efficiency (%) 60 10 5 0 -65 -50 2080 39 44 49 54 Output Power, PEP. (dBm) Frequency (MHz) Two-tone Drive-up Two-tone Drive-up (over temperature) VDD = 30 V, IDQ = 2.6 A, (POUT-max 3rd order IMD @ -30 dBc) 1 = 1989 MHz, 2 = 1990 MHz VDD = 30 V, IDQ = 2.6 A, 1 = 1959 MHz, 2 = 1960 MHz 42 35 28 18 21 Efficiency 17 14 16 15 40 44 48 52 Gain 30 18 20 Efficiency 17 0 16 56 40 19 7 +25C +85C -30C 10 0 39 Output Power, PEP (dBm) Data Sheet - DRAFT ONLY 50 20 Gain (dB) Gain Efficiency (%) Gain (dB) 19 21 Efficiency (%) 20 41 43 45 47 49 51 53 55 57 Output Power, PEP (dBm) 4 of 13 one Rev. 04, 2011-02-07 PTFB193404F Confidential, Limited Internal Distribution Typical Performance (cont.) Intermodulation Distortion vs. Output Power Two-tone Drive-up at Selected Frequencies VDD = 30 V, IDQ = 2.6 A, VDD = 30 V, IDQ = 2.6 A, tone spacing = 1 MHz 1 = 1989 MHz, 2 = 1990 MHz -15 3rd Order -25 -30 5th -35 IMD (dBc) -40 -50 1990 MHz 1960 MHz 1930 MHz -60 -45 7th -55 -65 -75 -70 39 41 43 45 47 49 51 53 55 39 57 41 -20 IMD3 IMD (dBc) -30 IMD5 IMD7 IMD Lower IMD Upper -70 10 Adjacent Channel Power Ratio (dB) = 1930 MHz, POUT = 317 W (PEP) -10 1 51 53 55 57 -20 40 Efficiency 35 -30 30 25 -40 20 ACPR Up 15 -50 10 ACPR Low 5 -60 0 36 100 38 40 42 44 46 48 50 52 Average Output Power (dBm) Two Tone Spacing (MHz) Data Sheet - DRAFT ONLY 49 VDD = 30 V, IDQ = 2.6 A, = 1990 MHz, 3GPP WCDMA signal, TM1 w/16 DPCH, 43% clipping, PAR = 7.5 dB, 3.84 MHz BW VDD = 30 V, IDQ = 2.6 A, -60 47 Single-carrier WCDMA Drive-up Intermodulation Distortion vs. Tone Spacing -50 45 Output Power, PEP (dBm) Output Power, PEP (dBm) -40 43 Drain Efficiency (%) IMD 3rd Order (dBc) -20 5 of 13 two Rev. 04, 2011-02-07 PTFB193404F Confidential, Limited Internal Distribution Typical Performance (cont.) Single-carrier WCDMA Drive-up Single-carrier WCDMA Drive-up V DD = 30 V, IDQ = 2.6 A, = 1990 MHz, V DD = 30 V, IDQ = 2.6 A, = 1960 MHz, 3GPP WCDMA s ignal, PAR = 7.5 dB, BW = 3.84 MHz 3GPP WCDMA signal, PAR = 7.5 dB, BW = 3.84 MHz 26 18 10 Efficiency 14 -10 PARC @ .01% CCDF 10 -30 6 -50 ACP 2 -70 36 38 40 42 44 46 48 50 52 22 18 10 Efficiency 14 10 6 -50 ACP -70 36 40 42 44 46 48 50 52 54 Single-carrier WCDMA Broadband V DD = 30 V, IDQ = 2.6 A, POUT = 125 W, 3GPP WCDMA signal, PAR = 7.5 dB, BW = 3.84 MHz 3GPP WCDMA signal Gain 40 20 12 Efficiency 8 0 -20 PARC @ .01% CCDF -40 ACP 0 38 40 42 44 46 48 50 52 -60 Gain, PARC (dB) / Efficiency (%) . Single-carrier WCDMA Drive-up V DD = 30 V, IDQ = 2.6 A, = 1930 MHz, Efficiency (%) / ACP (dBc) PARC (dB) / PARC Gain (dB) 38 Average Output Power (dBm) 60 36 -30 2 54 20 4 -10 PARC @ .01% CCDF Average Output Power (dBm ) 16 30 54 0 35 Efficiency IRL -10 25 -20 Gain 15 PARC @ .01% CCDF -30 5 ACP -5 1840 1900 1960 2020 -40 2080 Frequency (MHz) Average Output Power (dBm) Data Sheet - DRAFT ONLY Efficiency (%) / ACP (dBc) 30 50 Gain Return Loss (dB) / ACP (dBc) 22 PARC (dB) / PARC Gain (dB) 50 Gain Efficiency (%) / ACP (dBc) PARC (dB) / PARC Gain (dB) 26 6 of 13 one Rev. 04, 2011-02-07 PTFB193404F Confidential, Limited Internal Distribution Broadband Circuit Impedance (measurements taken on full part, both sides) Z Source Frequency Z Load D MHz R jX R jX 1900 1.21 -3.60 0.73 -2.08 1930 1.21 -3.53 0.72 -2.01 1960 1.20 -3.47 0.72 -1.94 1990 1.20 -3.41 0.72 -1.87 2020 1.19 -3.35 0.72 -1.81 Z Source G G S PP- FET Z Load c o mp l e _ t 1 e 2 - 1 6 - 2 0 1 0 D See next page for circuit information Data Sheet - DRAFT ONLY 7 of 13 two Rev. 04, 2011-02-07 PTFB193404F Confidential, Limited Internal Distribution Reference Circuit C802 10000000 pF C804 10000000 pF S3 8 7 1 6 2 R801 100 Ohm R803 10 Ohm 5 3 C803 1000 pF R804 1200 Ohm 4 C 2 S2 S1 2 R802 1300 Ohm 4 S 1 B C801 1000000 pF E 3 1 3 TL102 TL101 2 3 1 TL116 TL117 TL122 C102 1000000 pF TL118 2 TL119 L101 22 nH TL103 R103 10 Ohm TL104 C106 18 pF TL107 TL105 3 1 Gate DUT (Pin G1) 4 PORT RF_IN 1 C107 1.5 pF TL121 TL110 TL120 3 1 TL109 TL108 2 C105 18 pF TL106 C103 10000000 pF TL123 TL124 TL111 3 1 C101 1000000 pF TL112 L102 22 nH 2 r = 3.48 TL113 R104 10 Ohm TL114 b 1 93 4 0 4F - v1 _ B D o ut _1 2 - 1 6 - 2 0 10 C104 10000000 pF TL115 Gate DUT (Pin G2) H = 20 mil RO/RO4350B1 Reference circuit input schematic for = 1990 MHz Data Sheet - DRAFT ONLY 8 of 13 one Rev. 04, 2011-02-07 PTFB193404F Confidential, Limited Internal Distribution Reference Circuit (cont.) C213 10000000 pF TL225 Drain VDD (Pin V1) Drain DUT (Pin D1) Drain DUT (Pin D2) Drain VDD (Pin V2) TL224 3 2 1 TL210 TL223 3 2 1 TL222 3 2 1 TL226 3 2 TL221 1 TL220 3 2 1 VDD DCVS V1 C205 18 pF TL227 TL207 TL209 C203 100000000 pF C208 4700000 pF C209 4700000 pF C212 10000000 pF TL206 TL212 TL203 C204 18 pF TL205 2 TL204 TL202 TL208 TL201 TL211 PORT RF_OUT 1 1 3 C201 0.8 pF TL216 2 TL217 1 2 3 C211 10000000 pF TL215 1 2 3 C210 10000000 pF TL214 1 2 3 C207 4700000 pF TL219 TL213 1 2 3 C206 4700000 pF TL218 b 1 9 3 4 0 4F - v1 _ B D o u t _ 1 2- 1 6- 2 0 1 0 1 3 V DD DCVS V2 C202 100000000 pF r = 3.48 H = 20 mil RO/RO4350B1 Reference circuit output schematic for = 1990 MHz Reference Circuit Assembly DUT PTFB193404F Test Fixture Part No. LTN/PTFB193404EF Rogers RO4350, 0.508 mm [0.020"] thick, 1 oz. copper, r = 3.48copper Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower PCB Transmission Electrical Line Input Characteristics Dimensions: W, L (mm) Dimensions: W, L (mils) TL101 0.017 , 47.12 W1 = 1.270, W2 = 1.270, W3 = 1.524 W1 = 50, W2 = 50, W3 = 60 TL102 0.039 , 47.12 W = 1.270, L = 3.553 W = 50, L = 140 TL103 0.023 , 47.12 W = 1.270, L = 2.055 W = 50, L = 81 TL104 0.013 , 47.12 W = 1.270, L = 1.168 W = 50, L = 46 TL105 0.122 , 7.29 W = 12.700, L = 10.160 W = 500, L = 400 W1 = 0.010, W2 = 1.168, Offset = 5.893 W1 = 10, W2 = 46, Offset = 232 TL106 TL107 W1 = 0.010, W2 = 1.168, Offset = -5.893 W1 = 10, W2 = 46, Offset = -232 TL108 0.007 , 34.08 W = 2.032, L = 0.635 W = 80, L = 25 TL109 0.012 , 34.08 W1 = 2.032, W2 = 1.034 W1 = 80, W2 = 41 TL110 0.055 , 53.60 W = 1.034, L = 5.029 W = 41, L = 198 TL111 0.023 , 47.12 W = 1.270, L = 2.111 W = 50, L = 83 TL112 0.017 , 47.12 W = 1.270, L = 1.524 W = 50, L = 60 TL113 0.023 , 47.12 W = 1.270, L = 2.055 W = 50, L = 81 table continued on page 9 Data Sheet - DRAFT ONLY 9 of 13 two Rev. 04, 2011-02-07 PTFB193404F Confidential, Limited Internal Distribution Reference Circuit (cont.) Transmission Line Input (cont.) Electrical Characteristics Dimensions: W, L (mm) Dimensions: W, L (mils) TL114 0.013 , 47.12 W = 1.270, L = 1.168 W = 50, L = 46 TL115 0.122 , 7.29 W = 12.700, L = 10.160 W = 500, L = 400 TL116 0.068 , 47.12 W = 1.270, L = 6.170 W = 50, L = 243 TL117 0.032 , 47.12 W = 1.270, L = 2.875 W = 50, L = 113 TL118 0.024 , 47.12 W = 1.270, L = 2.131 W = 50, L = 84 TL119 0.017 , 47.12 W = 1.270, L = 1.524 W = 50, L = 60 TL120 0.084 , 53.60 W = 1.034, L = 7.671 W = 41, L = 302 TL121 0.014 , 53.60 W1 = 1.034, W2 = 1.034, W3 = 1.27 W1 = 41, W2 = 41, W3 = 50 TL122 0.014 , 47.12 W1 = 1.270, W2 = 1.270, W3 = 1.270, W4 = 1.270 W1 = 50, W2 = 50, W3 = 50, W4 = 50 TL123 0.032 , 47.12 W = 1.270, L = 2.896 W = 50, L = 114 TL124 0.014 , 47.12 W1 = 1.270, W2 = 1.270, W3 = 1.27 W1 = 50, W2 = 50, W3 = 50 TL201 W1 = 1.577, W2 = 1.046 W1 = 62, W2 = 41 TL202 W1 = 2.263, W2 = 1.577 W1 = 89, W2 = 62 W1 = 89, W2 = 89, W3 = 30 Output TL203 0.009 , 31.48 W1 = 2.263, W2 = 2.263, W3 = 0.762 TL204 0.139 , 31.48 W = 2.263, L = 12.299 W = 89, L = 484 W1 = 0.001, W2 = 13.335, Offset = -6.223 W1 = 1, W2 = 525, Offset = -245 TL205 TL206 W1 = 3.048, W2 = 2.263 W1 = 120, W2 = 89 TL207 0.009 , 25.04 W = 3.048, L = 0.762 W = 120, L = 30 TL208 0.266 , 40.78 W = 1.577, L = 23.889 W = 62, L = 941 TL209 0.160 , 6.97 W = 13.335, L = 13.335 W = 525, L = 525 TL210 0.160 , 6.97 W = 13.335, L = 13.335 W = 525, L = 525 TL211 0.151 , 53.21 W = 1.046, L = 13.774 W = 41, L = 542 TL212 0.120 , 31.48 W = 2.263, L = 10.617 W = 89, L = 418 TL213 0.024 , 19.85 W1 = 4.064, W2 = 4.064, W3 = 2.032 W1 = 160, W2 = 160, W3 = 80 TL214 0.026 , 19.85 W1 = 4.064, W2 = 4.064, W3 = 2.286 W1 = 160, W2 = 160, W3 = 90 TL215 0.026 , 19.85 W1 = 4.064, W2 = 4.064, W3 = 2.286 W1 = 160, W2 = 160, W3 = 90 TL216 0.024 , 19.85 W1 = 4.064, W2 = 4.064, W3 = 2.032 W1 = 160, W2 = 160, W3 = 80 TL217 0.026 , 19.85 W1 = 4.064, W2 = 4.064, W3 = 2.286 W1 = 160, W2 = 160, W3 = 90 TL218 0.116 , 19.85 W = 4.064, L = 10.008 W = 160, L = 394 TL219 0.052 , 19.85 W = 4.064, L = 4.470 W = 160, L = 176 TL220 0.116 , 19.85 W = 4.064, L = 10.008 W = 160, L = 394 TL221 0.024 , 19.85 W1 = 4.064, W2 = 4.064, W3 = 2.032 W1 = 160, W2 = 160, W3 = 80 TL222 0.026 , 19.85 W1 = 4.064, W2 = 4.064, W3 = 2.286 W1 = 160, W2 = 160, W3 = 90 TL223 0.026 , 19.85 W1 = 4.064, W2 = 4.064, W3 = 2.286 W1 = 160, W2 = 160, W3 = 90 TL224 0.026 , 19.85 W1 = 4.064, W2 = 4.064, W3 = 2.286 W1 = 160, W2 = 160, W3 = 90 TL225 0.024 , 19.85 W1 = 4.064, W2 = 4.064, W3 = 2.032 W1 = 160, W2 = 160, W3 = 80 TL226 0.052 , 19.85 W = 4.064, L = 4.470 W = 160, L = 176 W1 = 0.001, W2 = 13.335, Offset = 6.223 W1 = 1, W2 = 525, Offset = 245 TL227 Data Sheet - DRAFT ONLY 10 of 13 one Rev. 04, 2011-02-07 PTFB193404F Confidential, Limited Internal Distribution Reference Circuit (cont.) RO4350, .020 .020 VDD (60) C803 R802 R804 C213 C209 C212 C208 C802 C104 S2 + R803 R801 S1 C203 VDD S3 C801 C102 L101 R103 C104 C107 RF_IN C204 C205 C106 C105 C103 RF_OUT C201 L102 R104 C101 VDD C202 C210 C206 C211 C207 PTFB193404_IN_01 PTFB193404_OUT_01 RO4350,.020 (63) b1 9 3 4 0 4f - v 1 _ C D _1 2 - 1 6 - 2 0 1 0 Reference circuit assembly diagram (not to scale) Component ID Description Suggested Manufacturer P/N C101, C102 Chip capacitor, 1 F ATC NFM18PS105R0J30 C103, C104 Capacitor, 10 F Digi-Key 490-4393-2-ND C105, C106, C204, C205 Capacitor, 18 pF ATC 800A180JT C107 Capacitor, 1.5 pF ATC 800A1R5BT C801 Capacitor, 1 F Digi-Key 490-4736-2-ND C802, C804 Capacitor, 10 F Digi-Key 587-1818-2-ND C803 Chip capacitor, 1000 pF Digi-Key PCC1772CT-ND L101, L102 Inductor, 22 nH Digi-Key 0805W220JT R101, R102 Resistor, 1000 Digi-Key P1.0KECT-ND R103, R104 Resistor, 10 Digi-Key P10GTR-ND R801 Resistor, 100 Digi-Key P100GTR-ND R802 Resistor, 1300 Digi-Key P1.3KGTR-ND R803 Resistor, 10 Digi-Key P101GTR-ND R804 Resistor, 1200 Digi-Key P1.2KGTR-ND S1 Potentiometer Digi-Key 3224W-202ECT-ND S2 Transistor Digi-Key BCP56-ND, BCP56 S3 Voltage regulator Digi-Key LM780L05ACM-ND, 7805 C201 Capacitor, 0.8 pF ATC 800A0R8BT C202, C203 Capacitor, 100 F Digi-Key PCE4442TR-ND C206, C207, C208, C209 Capacitor, 4.7 F Digi-Key 490-1864-2-ND C210, C211, C212, C213 Capacitor, 10 F Digi-Key 587-1818-2-ND Data Sheet - DRAFT ONLY 11 of 13 two Rev. 04, 2011-02-07 PTFB193404F Confidential, Limited Internal Distribution Pinout Diagram Package H-37275-6/2 V1 V2 D1 D2 S= 1 G2 -37275-6-2_pd_07-22-2010 Pin Description V1 V2 D1 D2 G1 G2 S VDD device 1 VDD device 2 Drain device 1 Drain device 2 Gate device 1 Gate device 2 Source (flange) See next page for package outline specifications Data Sheet - DRAFT ONLY 12 of 13 one Rev. 04, 2011-02-07 PTFB193404F Confidential, Limited Internal Distribution Package Outline Specifications Package H-37275-6/2 31.750 [1.250] 13.716 [.540] 2X 45 X 1.19 [45 X .047] 2X 2.032 [.080] REF 2X 1.143 [.045] CL V1 2X 30 2X 3.175 [.125] D1 D2 V2 9.398 [.370] CL G1 +.381 4X R0.508 -.127 R.020 +.015 -.005 [ ] 3.2260.508 [.127.020] 10.160 [.400] 9.144 [.360] 16.612.500 [.654.020] G2 C L C L 4X 11.684 [.460] 2.134 [.084] SPH 31.2420.280 [1.230.011] 1.626 [0.064] 4.585+0.250 -0.127 .180 +.010 -.005 [ CL ] h- 37275- 6-2_po _07-21- 2010 32.258 [1.270] S Diagram Notes--unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 - drain, devices 1 & 2; G1, G2 - gate, devices 1 & 2; V1, V2 - VDD, devices 1 & 2; S - source (flange). 5. Lead thickness: 0.127 0.051 [.005 .002]. 6. Gold plating thickness: 1.14 0.38 micron [45 15 microinch]. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet - DRAFT ONLY 13 of 13 two Rev. 04, 2011-02-07 PTFB193404F V1 Confidential, Limited Internal Distribution Revision History: 2011-01-24 Previous Version: Data Sheet 2010-12-16, Data Sheet Page Subjects (major changes since last revision) 1, 2 RF tables revised for clarity. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2011-01-24 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet - DRAFT ONLY 14 of 13 Rev. 04, 2011-02-07