FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085
@2014 Fairchild Semiconductor Corporation www.fairchildsemi.com 1
FGB3440G2_F085 / FGD3440G2_F085
EcoSPARK®2 335mJ, 400V, N-Channel Ignition IGBT
Features
SCIS Energy = 335mJ at TJ = 25oC
Logic Level Gate Drive
Qualified to AEC Q101
RoHS Compliant
Applications
Automotive lgnition Coil Driver Circuits
Coil On Plug Applications
May 2014
FGP3440G2_F085
Package
GATE
COLLECTOR
EMITTER
R
2
R
1
Symbol
JEDEC TO-252AA
D-Pak
D²-Pak
JEDEC TO-263AB
COLLECTOR
(FLANGE)
JEDEC TO-220AB
E
G
E
G
EG
C
Symbol Parameter Ratings Units
BVCER Collector to Emitter Breakdown Voltage (IC = 1mA) 400 V
BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10mA) 28 V
ESCIS25 Self Clamping Inductive Switching Energy (Note 1) 335 mJ
ESCIS150 Self Clamping Inductive Switching Energy (Note 2) 195 mJ
IC25 Collector Current Continuous, at VGE = 4.0V, TC = 25°C 26.9 A
IC110 Collector Current Continuous, at VGE = 4.0V, TC = 110°C 25 A
VGEM Gate to Emitter Voltage Continuous ±10 V
PD
Power Dissipation Total, at TC = 25°C 166 W
Power Dissipation Derating, for TC > 25oC1
.1W/
oC
TJOperating Junction Temperature Range -40 to +175 oC
TSTGStorage Junction Temperature Range -40 to +175 oC
TLMax. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s) 300 oC
TPKGMax. Lead Temp. for Soldering (Package Body for 10s) 260 oC
ESD Electrostatic Discharge Voltage at100pF, 1500Ω 4kV
Device Maximum Ratings TA = 25°C unless otherwise noted
FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Rev.C3
FFGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085
@2014 Fairchild Semiconductor Corporation www.fairchildsemi.com 2
Electrical Characteristics TA = 25°C unless otherwise noted
Off State Characteristics
On State Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
BVCER Collector to Emitter Breakdown Voltage
ICE = 2mA, VGE = 0,
RGE = 1KΩ,
TJ = -40 to 150oC
370 400 430 V
BVCES Collector to Emitter Breakdown Voltage
ICE = 10mA, VGE = 0V,
RGE = 0,
TJ = -40 to 150oC
390 420 450 V
BVECS Emitter to Collector Breakdown Voltage ICE = -20mA, VGE = 0V,
TJ = 25°C 28 - - V
BVGES Gate to Emitter Breakdown Voltage IGES = ±2mA ±12 ±14 - V
ICER Collector to Emitter Leakage Current VCE = 250V, RGE=1KΩ
TJ = 25oC-
-25μA
TJ = 150oC-
-1mA
IECS Emitter to Collector Leakage Current VEC = 24V,
TJ = 25oC -
-1
mA
TJ = 150oC-
-40
R1Series Gate Resistance - 120 - Ω
R2Gate to Emitter Resistance 10K - 30K Ω
VCE(SAT) Collector to Emitter Saturation Voltage ICE = 6A, VGE = 4V, TJ = 2 5 oC - 1 . 1 1 . 2 V
VCE(SAT) Collector to Emitter Saturation Voltage ICE = 10A, VGE = 4.5V, TJ = 150oC-
1.31.45V
VCE(SAT) Collector to Emitter Saturation Voltage ICE = 15A, VGE = 4.5 V, TJ = 150oC-
1.61.75V
ESCISSelf Clamped Inductive Switching L = 3.0 mHy, VGE = 5V
RG = 1KΩ, (Note 1) TJ = 25oC- - 335 mJ
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FGB3440G2 FGB3440G2_F085 TO-263AB 330mm16mm 2500
FGD3440G2_F085 TO-252AA 330mm 24mm 800
FGP3440G2_F085 TO-220AB Tube N/A 50
FGD3440G2
FGP3440G2
Notes:
1: Self Clamping Inductive Switching Energy(ESCIS25) of 335mJ is based on the test conditions that is starting
TJ=25 oC; L=3mHy, ISCIS=15A,VCC=100V during inductor charging and VCC=0V during the time in clamp .
2: Self Clamping Inductive Switching Energy (ESCIS150) of 195mJ is based on the test conditions that is starting
TJ=150 oC; L=3mHy, ISCIS=11.4A,VCC=100V during inductor charging and VCC=0V during the time in clamp.
FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Rev.C3
FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085
@2014 Fairchild Semiconductor Corporation
FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Rev.C3
www.fairchildsemi.com 3
Electrical Characteristics TA = 25°C unless otherwise noted
Dynamic Characteristics
Switching Characteristics
Thermal Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
QG(ON) Gate Charge ICE = 10A, VCE = 12V,
VGE = 5V -24-nC
VGE(TH) Gate to Emitter Threshold Voltage ICE = 1mA, VCE = VGE,
TJ = 25oC 1.3 1.7 2.2 V
TJ = 150oC 0.75 1.2 1.8
VGEP Gate to Emitter Plateau Voltage VCE = 12V, ICE = 1 0 A - 2 . 8 - V
td(ON)R Current Turn-On Delay Time-Resistive VCE = 14V, RL = 1Ω
VGE = 5V, RG = 1KΩ
TJ = 25oC,
-1.04μs
trR Current Rise Time-Resistive - 2.0 7 μs
td(OFF)L Current Turn-Off Delay Time-Inductive VCE = 300V, L = 1mH,
VGE = 5V, RG = 1KΩ
ICE =6.5A, TJ = 25oC,
- 5 . 3 1 5 μs
tfL Current Fall Time-Inductive - 2.3 15 μs
RθJC Thermal Resistance Junction to Case - - 0.9 oC/W
FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085
@2014 Fairchild Semiconductor Corporation
FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Rev.C3
www.fairchildsemi.com 4
Typical Performance Curves
Figure 1. Self Clamped Inductive Switching
Current vs. Time in Clamp
10 100 1000
1
10
100
SCIS Curves valid for Vclamp Voltages of <430V
TJ = 150oC
TJ = 25oC
tCLP, TIME IN CLAMP (μS)
ISCIS, INDUCTIVE SWITCHING CURRENT (A)
RG = 1KΩ, VGE = 5V, VCE = 100V
Figure 2.
03691215
0
10
20
30
SCIS Curves valid for Vclamp Voltages of <430V
TJ = 150oC
TJ = 25oC
L, INDUCTANCE (mHy)
ISCIS, INDUCTIVE SWITCHING CURRENT (A)
RG = 1KΩ, VGE = 5V, VCE = 100V
Self Clamped Inductive Switching
Current vs. Inductance
Figure 3.
-75 -50 -25 0 25 50 75 100 125 150 175
1.00
1.05
1.10
1.15
1.20 ICE = 6A
VGE = 8V
VGE = 5V
VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
TJ, JUNCTION TEMPERTURE (oC)
Collector to Emitter On-State Voltage
vs. Junction Temperature
Figure 4.
-75 -50 -25 0 25 50 75 100 125 150 175
1.10
1.15
1.20
1.25
1.30
1.35
1.40
1.45
1.50 ICE = 10A
VGE = 8V
VGE = 5V VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
TJ, JUNCTION TEMPERTURE (oC)
Collector to Emitter On-State Voltage
vs. Junction Temperature
Figure 5.
01234
0
10
20
30
TJ = -40oC
VGE = 4.5V
VGE = 5.0V
VGE = 3.7V
VGE = 4.0V
VGE = 8.0V
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
Collector to Emitter On-State Voltage
vs. Collector Current
Figure 6. Collector to Emitter On-State Voltage
vs. Collector Current
01234
0
10
20
30
TJ = 25oC
VGE = 4.5V
VGE = 5.0V
VGE = 3.7V
VGE = 4.0V
VGE = 8.0V
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085
@2014 Fairchild Semiconductor Corporation
FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Rev.C3
www.fairchildsemi.com 5
Figure 7.
01234
0
10
20
30
TJ = 175oC
VGE = 4.5V
VGE = 5.0V
VGE = 3.7V
VGE = 4.0V
VGE = 8.0V
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
Collector to Emitter On-State Voltage
vs. Collector Current
Figure 8.
1234
0
10
20
30
TJ = -40oC
TJ = 25oC
TJ = 175oC
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
VCE = 5V
ICE, COLLECTOR TO EMITTER CURRENT (A)
VGE, GATE TO EMITTER VOLTAGE (V)
Transfer Characteristics
Figure 9.
25 50 75 100 125 150 175
0
10
20
30
ICE, DC COLLECTOR CURRENT (A)
TC, CASE TEMPERATURE(oC)
VGE = 4.0V
DC Collector Current vs. Case
Temperature
Figure 10. Threshold Voltage vs. Junction
Temperature
-50 -25 0 25 50 75 100 125 150 175
1.0
1.2
1.4
1.6
1.8
2.0
VCE = VGE
ICE = 1mA
VTH, THRESHOLD VOLTAGE (V)
TJ, JUNCTION TEMPERATURE(oC)
Figure 11.
-50 -25 0 25 50 75 100 125 150 175
0.1
1
10
100
1000
10000
VCES = 250V
VCES = 300V
VECS = 24V
TJ, JUNCTION TEMPERATURE (oC)
LEAKAGE CURRENT (μA)
Leakage Current vs. Junction
Temperature
Figure 12.
25 50 75 100 125 150 175
0
2
4
6
8
10
12
Resistive tON
Inductive tOFF
Resistive tOFF
SWITCHING TIME (μS)
TJ, JUNCTION TEMPERATURE (oC)
ICE = 6.5A, VGE = 5V, RG = 1KΩ
Switching Time vs. Junction
Temperature
Typical Performance Curves (Continued)
FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085
@2014 Fairchild Semiconductor Corporation
FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Rev.C3
www.fairchildsemi.com 6
Figure 13.
5 10152025
0
400
800
1200
1600
2000
f = 1MHz
VGE = 0V
CRES
COES
CIES
VDS, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
Capacitance vs. Collector to Emitter
Voltage
Figure 14.
0 10203040506070
0
2
4
6
8
10
ICE = 10A, TJ = 25oC
VCE = 6V
VGS, GATE TO EMITTER VOLTAGE(V)
Qg, GATE CHARGE(nC)
VCE = 12V
Gate Charge
Figure 15.
10 100 1000 6000
380
400
420
440
TJ = 25oC
TJ = -40oC
TJ = 175oC
ICER = 10mA
RG, SERIES GATE RESISTANCE (Ω)
BVCER, BREAKDOWN VOLTAGE (V)
Break down Voltage vs. Series Gate Resistance
Figure 16.
10-5 10-4 10-3 10-2 10-1 1
0.01
0.1
1
0.01
0.02
0.05
0.1
SINGLE PULSE
NORMALIZED THERMAL
IMPEDANCE, ZθJC
t, RECTANGULAR PULSE DURATION(s)
DUTY CYCLE - DESCENDING ORDER
2
D = 0.50
0.2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
PDM
t1
t2
IGBT Normalized Transient Thermal Impedance, Junction to Case
Typical Performance Curves (Continued)
Test Circuit and Waveforms
Figure 17. Inductive Switching Test Circuit Figure 18. tON and tOFF Switching Test Circuit
Figure 19. Energy Test Circuit Figure 20. Energy Waveforms
RGG
C
E
VCC
L
PULSE
GEN DUT RG = 1KΩ+
-
VCC
DUT
5V
C
G
E
LOAD
R
or
L
tP
VGE
0.01Ω
L
ISCIS
+
-
VCE
VCC
RG
VARY tP TO OBTAIN
REQUIRED PEAK ISCIS
0V
DUT
G
C
E
VCC
VCE
BVCES
tP
ISCIS
tAV
0
FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085
7
@2014 Fairchild Semiconductor Corporation
FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Rev.C3
www.fairchildsemi.com
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