DTA143T series
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor) Datasheet
llOutline
Parameter Value SOT-723 SOT-416FL
VCEO -50V
IC-100mA
R14.7kΩ DTA143TM DTA143TEB
llFeatures (VMT3) (EMT3F)
1) Built-In Biasing Resistor
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit) .
3) Only the on/off conditions need to be set
for operation, making the circuit design easy.
4) Complementary NPN Types: DTC143T series
SOT-416 SOT-323FL
DTA143TE DTA143TUB
(EMT3) (UMT3F)
SOT-323 SOT-346
llApplication DTA143TUA DTA143TKA
INVERTER, INTERFACE,DRIVER (UMT3) (SMT3)
llInner circuit
DTA143TM/ DTA143TEB/ DTA143TUB DTA143TE/ DTA143TUA/ DTA143TKA
llPackaging specifications
Part No. Package Package
size
Taping
code
Reel size
(mm)
Tape width
(mm)
Basic
ordering
unit.(pcs)
Marking
DTA143TM SOT-723 1212 T2L 180 8 8000 93
DTA143TEB SOT-416FL 1616 TL 180 8 3000 93
DTA143TE SOT-416 1616 TL 180 8 3000 93
DTA143TUB SOT-323FL 2021 TL 180 8 3000 93
DTA143TUA SOT-323 2021 T106 180 8 3000 93
DTA143TKA SOT-346 2928 T146 180 8 3000 93
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© 2016 ROHM Co., Ltd. All rights reserved. 1/9 20160123 - Rev.003
DTA143T series Datasheet
llAbsolute maximum ratings (Ta = 25°C)
Parameter Symbol Values Unit
Collector-base voltage VCBO -50 V
Collector-emitter voltage VCEO -50 V
Emitter-base voltage VEBO -5 V
Collector current IC-100 mA
Power dissipation
DTA143TM
PD*1
150
mW
DTA143TEB 150
DTA143TE 150
DTA143TUB 200
DTA143TUA 200
DTA143TKA 200
Junction temperature Tj150 ℃
Range of storage temperature Tstg -55 to +150 ℃
llElectrical characteristics (Ta = 25°C)
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Collector-base breakdown
voltage BVCBO IC = -50μA -50 - - V
Collector-emitter breakdown
voltage BVCEO IC = -1mA -50 - - V
Emitter-base breakdown voltage BVEBO IE = -50μA -5 - - V
Collector cut-off current ICBO VCB = -50V - - -500 nA
Emitter cut-off current IEBO VEB = -4V - - -500 nA
Collector-emitter saturation voltage VCE(sat) IC = -5mA, IB = -0.25mA - - -300 mV
DC current gain hFE VCE = -5V, IC = -1mA 100 250 600 -
Input resistance R1- 3.29 4.7 6.11 kΩ
Transition frequency fT*2 VCE = -10V, IE = 5mA,
f = 100MHz - 250 - MHz
*1 Each terminal mounted on a reference land.
*2 Characteristics of built-in transistor
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© 2016 ROHM Co., Ltd. All rights reserved. 2/9 20160123 - Rev.003
DTA143T series Datasheet
llElectrical characteristic curves(Ta=25℃℃)
Fig.1 Grounded emitter propagation
characteristics
Fig.2 Grounded emitter output
characteristics
Fig.3 DC Current gain vs. Collector Current Fig.4 Collector-emitter saturation voltage vs.
Collector Current
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© 2016 ROHM Co., Ltd. All rights reserved. 3/9 20160123 - Rev.003
DTA143T series Datasheet
llDimensions
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© 2016 ROHM Co., Ltd. All rights reserved. 4/9 20160123 - Rev.003
DTA143T series Datasheet
llDimensions
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© 2016 ROHM Co., Ltd. All rights reserved. 5/9 20160123 - Rev.003
DTA143T series Datasheet
llDimensions
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© 2016 ROHM Co., Ltd. All rights reserved. 6/9 20160123 - Rev.003
DTA143T series Datasheet
llDimensions
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© 2016 ROHM Co., Ltd. All rights reserved. 7/9 20160123 - Rev.003
DTA143T series Datasheet
llDimensions
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© 2016 ROHM Co., Ltd. All rights reserved. 8/9 20160123 - Rev.003
DTA143T series Datasheet
llDimensions
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© 2016 ROHM Co., Ltd. All rights reserved. 9/9 20160123 - Rev.003
Notice-PGA-E Rev.003
© 2015 ROHM Co., Ltd. All rights reserved.
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Precaution for Mounting / Circuit board design
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