Phototransistors
1
Publication date: April 2004 SHE00017BED
PNZ147 (PN147)
Silicon planar type
For optical control systems
■Features
•High sensitivity
•Wide spectral sensitivity characteristics, suited for detecting GaAs
LEDs
•Fast response: tr , tf = 3 µs (typ.)
•Small size designed for easier mounting to printed circuit board
■Absolute Maximum Ratings Ta = 25°C
Unit: mm
Parameter Symbol Rating Unit
Collector-emitter voltage (Base open) VCEO 20 V
Emitter-collector voltage (Base open) VECO 5V
Collector current IC20 mA
Collector power dissipation PC50 mW
Operating ambient temperature Topr −25 to +85 °C
Storage temperature Tstg −30 to +100 °C
1: Collector
2: Emitter
LTTLW102-001 Package
50 ΩRL
VCC
Sig. out 10%
90%
Sig. in
trtf
(Input pulse)
(Output pulse)
tr: Rise time
tf: Fall time
Note) The part number in the parenthesis shows conventional part number.
2.8
±0.2
3.2
±0.3
0.5
±0.1
(0.15)
45°
12
10.0 min.
Type number : cathode mark (Green)
10.0 min.
3.2
±0.3
(1.8) (1.8)
(0.7)
(0.7)
0.4
±0.1
2.2
±0.15
2.8
±0.2
1.05
±0.1
0.85
±0.15
R0.9
(φ1.8)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed be disregarded radiation.
5. *1: Source: Tungsten (color temperature 2
856 K)
*2: Rank classification
*3: Switching time measurement circuit
Parameter Symbol Conditions Min Typ Max Unit
Photocurrent *1ICE(L)1 *2VCE = 10 V, L = 2 lx 3 12 µA
ICE(L)2 VCE = 10 V, L = 500 lx 3.5 mA
Dark current ICEO VCE = 10 V 0.01 0.50 µA
Peak emission wavelength λpVCE = 10 V 800 nm
Half-power angle θThe angle from which photocurrent 24 °
becomes 50%
Rise time *3trVCC = 10 V, ICE(L) = 5 mA, RL = 100 Ω310µs
Fall time *3tf310µs
Collector-emitter saturation voltage *1VCE(sat) ICE(L) = 1 mA, L = 1
000 lx 0.2 0.5 V
■Electrical-Optical Characteristics Ta = 25°C ± 3°C
Rank Q R S
ICE(L) (µA) 3.0 to 11.0 7.0 to 24.0 >16.0
2
PNZ147
SHE00017BED
60
50
40
30
20
10
00 20406080100
−20
2006040 80 100
−20
1
10
−1
10
−2
10
−3
10
−4
10
2
10
−1
10
1
−40 0 40 80 120
V
CE
= 10 V
T = 2
856 K
20
16
12
8
4
8124 162024
00
10
5
10
4
10
3
10 10
3
10
2
10
10
2
1
V
CE
= 10 V
T
a
= 25°C
T = 2
856 K
V
CE
= 10 V
T
a
= 25°C
100
80
60
40
20
200400 600 800 1
000 1
200
0
10
2
10
1
10
−1
10 10
2
10
−2
10
−1
1
T
a
= 25°C
T = 2
856 K
V
CC
= 10 V
T
a
= 25°C
Collector power dissipation P
C
(mW)
Ambient temperature T
a
(°C)
Photocurrent I
CE(L)
(mA)
Collector-emitter voltage V
CE
(V)
Photocurrent I
CE(L)
(µA)
Illuminance L (lx)
Relative sensitivity ∆S (%)
Wavelength λ (nm)
Photocurrent I
CE(L)
(mA)
Ambient temperature T
a
(°C)
Dark current I
CEO
(µA)
Ambient temperature T
a
(°C)
Rise time t
r
, Fall time t
f
(µs)
Photocurrent I
CE(L)
(mA)
0°10°20°
30°
40°
50°
60°
70°
80°
90°
V
CE
= 10 V
20
100
80
60
40
Relative sensitivity ∆S (%)
500 lx
250 lx
100 lx
1
000 lx
L = 1
500 lx
R
L
= 1 kΩ
500 Ω
100 Ω
PC TaICE(L) VCE ICE(L) L
ICEO TaICE(L) TaSpectral sensitivity characteristics
Directivity characteristics tr ICE(L) tf ICE(L)
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
•Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
•Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP
