ABB Sw itzerland Ltd, Semiconductors reserves the right to change specifications without notice.
V
DRM
=
6500
V
IT
(
AV
)
M
=
2810 A
IT
(
RMS
)
=
4410 A
ITSM
=
45×103 A
V
T0
=
1.12
V
rT
=
0.29 m
Phase Control Thyristor
5STP 26N6500
Doc. No. 5SYA1001-05 Jan. 11
Patented free-floating silicon technology
Low on-state and switching losses
Designed for traction, energy and industrial applications
Optimum power handling capability
Interdigitated amplifying gate
Blocking
Maximum rated values 1)
Parameter Symbol Conditions 5STP 26N6500 Unit
Max. surge peak forward and
reverse blocking voltage VDSM,
VRSM tp = 10 ms, f = 5 Hz
Tvj = 5…125°C, Note 1 6500 V
Max repetitive peak forward
and reverse blocking voltage
VDRM,
VRRM 6500 V
Max crest working forward
and reverse voltages VDWM,
VRWM
f = 50 Hz, tp = 10 ms, tp1 = 250 s,
Tvj = 5…125°C, Note 1, Note 2
t
tp1
VDRM,VRRM
VAK VDWM,VRWM
tp
4340 V
Critical rate of rise of
commutating voltage dv/dtcrit Exp. to 4340 V, Tvj = 125°C 3000 V/µs
Characteristic values
Parameter Symbol Conditions min typ max Unit
Forward leakage current IDRM VDRM, Tvj = 125°C 600 mA
Reverse leakage current IRRM VRRM, Tvj = 125°C 600 mA
Note 1: Voltage de-rating factor of 0.11% per °C is applicable for Tvj below +5 °C
Note 2: Recommended minimum ratio of VDRM / VDWM or VRRM / VRWM = 2. See App. Note 5SYA 2051.
Mechanical data
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Mounting force FM 81 90 108 kN
Acceleration a Device unclamped 50 m/s2
Acceleration a Device clamped 100 m/s2
Characteristic values
Parameter Symbol Conditions min typ max Unit
Weight m 2.9 kg
Housing thickness H FM = 90 kN, Ta = 25 °C 35 35.6 mm
Surface creepage distance DS 56 mm
Air strike distance Da 22 mm
1) Maximum rated values indicate limits beyond which damage to the device may occur
5STP 26N6500
ABB Sw itzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1001-05 Jan. 11 page 2 of 7
On-state
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Average on-state current IT(AV)M Half sine wave, Tc = 70 °C 2810 A
RMS on-state current IT(RMS) 4410 A
Peak non-repetitive surge
current ITSM 45×103 A
Limiting load integral I2t
tp = 10 ms, Tvj = 125 °C, sine wave
after surge: VD = VR= 0 V 10.1×106 A2s
Peak non-repetitive surge
current ITSM 50×103 A
Limiting load integral I2t
tp = 8.3 ms, Tvj = 125 °C, sine wave
after surge:
VD = VR= 0 V 10.4×106 A2s
Characteristic values
Parameter Symbol Conditions min typ max Unit
On-state voltage VT I
T = 3000 A, Tvj = 125 °C 2 V
Threshold voltage V(T0) 1.12 V
Slope resistance rT IT = 1300 A - 4000 A, Tvj= 125 °C 0.29
m
Holding current IH T
vj = 25 °C 125 mA
T
vj = 125 °C 75 mA
Latching current IL T
vj = 25 °C 500 mA
T
vj = 125 °C 250 mA
Switching
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Critical rate of rise of on-
state current di/dtcrit Cont.
f = 50 Hz 200 A/µs
Critical rate of rise of on-
state current di/dtcrit
Tvj = 125 °C,
ITRM = 3000 A,
VD 0.67 VDRM,
IFG = 2 A, tr = 0.5 µs Cont.
f = 1Hz 1000 A/µs
Circuit-commutated turn-off
time tq T
vj = 125°C, ITRM = 2000 A,
VR = 200 V, diT/dt = -1.5 A/µs,
VD 0.67VDRM, dvD/dt = 20 V/µs
800 µs
Characteristic values
Parameter Symbol Conditions min typ max Unit
Reverse recovery charge Qrr 3400 4600 µAs
Reverse recovery current IRM Tvj = 125°C, ITRM = 2000 A,
VR = 200 V,
diT/dt = -1.5 A/µs 50 85 A
Gate turn-on delay time tgd Tvj = 25 °C, VD = 0.4VRM, IFG = 2 A,
tr = 0.5 µs 3 µs
5STP 26N6500
ABB Sw itzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1001-05 Jan. 11 page 3 of 7
Triggering
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Peak forward gate voltage VFGM 12 V
Peak forward gate current IFGM 10 A
Peak reverse gate voltage VRGM 10 V
Average gate power loss PG(AV) see Fig. 9 W
Characteristic values
Parameter Symbol Conditions min typ max Unit
Gate-trigger voltage VGT T
vj = 25 °C 2.6 V
Gate-trigger current IGT T
vj = 25 °C 400 mA
Gate non-trigger voltage VGD V
D = 0.4 x VDRM, Tvjmax = 125 °C 0.3 V
Gate non-trigger current IGD V
D = 0.4 x VDRM, Tvjmax = 125°C 10 mA
Thermal
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Operating junction
temperature range Tvj 125 °C
Storage temperature range Tstg -40 140 °C
Characteristic values
Parameter Symbol Conditions min typ max Unit
Thermal resistance junction
to case Rth(j-c) Double-side cooled
Fm = 81...108 kN 5.7 K/kW
R
th(j-c)A Anode-side cooled
Fm = 81...108 kN 11.4 K/kW
R
th(j-c)C Cathode-side cooled
Fm = 81...108 kN 11.4 K/kW
Thermal resistance case to
heatsink Rth(c-h) Double-side cooled
Fm = 81...108 kN 1 K/kW
R
th(c-h) Single-side cooled
Fm = 81...108 kN 2 K/kW
Analytical function for transient thermal
impedance:
)e-(1R = (t)Z n
1i
t/-
i c)-th(j
i
i 1 2 3 4
Ri(K/kW) 3.691 1.276 0.492 0.245
i(s) 0.8685 0.1255 0.0168 0.0041
Fig. 1 Transient thermal impedance (junction-to-
case) vs. time
5STP 26N6500
ABB Sw itzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1001-05 Jan. 11 page 4 of 7
On-state characteristic model:
T
ID
T
IC
T
IBA
T
V
)1ln(
max
Valid for iT = 500 – 8000 A
A B C D
-477.5×10-3 186.0×10-6 264.9×10-3 -3.865×10-3
Fig. 2 On-state characteristics,
Tj=125°C, 10ms half sine Fig. 3 On-state voltage characteristics
Fig. 4 On-state power dissipation vs. mean on-state
current, turn-on losses excluded Fig. 5 Max. permissible case temperature vs. mean
on-state current, switching losses ignored
5STP 26N6500
ABB Sw itzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1001-05 Jan. 11 page 5 of 7
Fig. 6 Surge on-state current vs. pulse length,
half-sine wave Fig. 7 Surge on-state current vs. number of pulses,
half-sine wave, 10 ms, 50Hz
IGM
IGon
100 %
90 %
10 %
IGM 2..5 A
IGon 1.5 IGT
diG/dt 2 A/s
tr 1 s
tp(IGM) 5...20 s
diG/dt
tr
tp (IGM)
IG (t)
t
tp (IGon)
Fig. 8 Recommended gate current waveform Fig. 9 Max. peak gate power loss
Fig. 10 Reverse recovery charge vs. decay rate of
on-state current Fig. 11 Peak reverse recovery current vs. decay
rate of on-state current
5STP 26N6500
ABB Sw itzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1001-05 Jan. 11 page 6 of 7
Turn-on and Turn-off losses
Fig. 12 Turn-on energy, half sinusoidal waves Fig. 13 Turn-on energy, rectangular waves
Fig. 14 Turn-off energy, half sinusoidal waves Fig. 15 Turn-off energy, rectangular waves
Qrr
IT(t), V(t)
t
-diT/dt
IT(t)
-V0
-VRRM
V(t)
-IRRM
-dv/dtcom
Total power loss for repetitive waveforms:
fWfWPP offonTTOT
where
dtIVI
T
PT
TTTT
0)(
1
Fig. 16 Current and voltage waveforms at turn-off Fig. 17 Relationships for power loss
5STP 26N6500
ABB Sw itzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYA1001-05 Jan. 11
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
Fig. 18 Device Outline Drawing
Related documents:
5SYA 2020 Design of RC-Snubber for Phase Control Applications
5SYA 2049 Voltage definitions for phase control thyristors and diodes
5SYA 2051 Voltage ratings of high power semiconductors
5SYA 2034 Gate-Drive Recommendations for PCT's
5SYA 2036 Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors
5SZK 9104 Specification of environmental class for pressure contact diodes, PCTs and GTO, STORAGE available on request, please
contact factory
5SZK 9105 Specification of environmental class for pressure contact diodes, PCTs and GTO, TRANSPORTATION available on
request, please contact factory
Please refer to http://www.abb.com/semiconductors for current version of documents.
