BAV19W-V, BAV20W-V, BAV21W-V www.vishay.com Vishay Semiconductors Small Signal Switching Diodes, High Voltage FEATURES * Silicon epitaxial planar diodes * For general purpose * These diodes are also available in other case styles including: the DO-35 case with the type designations BAV19 to BAV21, the MiniMELF case with the type designations BAV100 to BAV103, the SOT-23 case with the type designations BAS19 to BAS21, and the SOD-323 case with type designations BAV19WS-V to BAV21WS-V MECHANICAL DATA * AEC-Q101 qualified Case: SOD-123 * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Weight: approx. 10.3 mg Packaging codes/options: GS18/10K per 13" reel (8 mm tape), 10K/box GS08/3K per 7" reel (8 m tape), 15K/box PARTS TABLE PART TYPE DIFFERENTIATION ORDERING CODE TYPE MARKING INTERNAL CONSTRUCTION REMARKS VR = 100 V VR = 150 V VR = 200 V BAV19W-V-GS18 or BAV19W-V-GS08 BAV20W-V-GS18 or BAV20W-V-GS08 BAV21W-V-GS18 or BAV21W-V-GS08 A8 A9 AA Single diode Single diode Single diode Tape and reel Tape and reel Tape and reel BAV19W-V BAV20W-V BAV21W-V ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION Continuous reverse voltage Repetitive peak reverse voltage DC Forward current (1) Rectified current (average) half wave rectification with resist. load (1) Repetitive peak forward current (1) Surge forward current Power dissipation (1) PART SYMBOL VALUE UNIT BAV19W-V BAV20W-V BAV21W-V BAV19W-V BAV20W-V BAV21W-V VR VR VR VRRM VRRM VRRM IF 100 150 200 120 200 250 250 V V V V V V mA IF(AV) 200 mA IFRM IFSM Ptot 625 1 410 mA A mW f 50Hz, = 180 t < 1 s, Tj = 25 C THERMAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION Thermal resistance junction to ambient air (1) Junction temperature (1) Storage temperature range (1) SYMBOL VALUE UNIT RthJA 375 C/W Tj 150 C Tstg - 65 to + 150 C Note (1) Valid provided that leads are kept at ambient temperature Rev. 1.4, 06-Nov-12 Document Number: 85725 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAV19W-V, BAV20W-V, BAV21W-V www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION Forward voltage Leakage current SYMBOL MIN. TYP. MAX. UNIT VF 1 V IF = 200 mA VF 1.25 V VR = 100 V BAV19W-V IR 100 nA VR = 100 V, Tj = 100 C BAV19W-V IR 15 A VR = 150 V BAV20W-V IR 100 nA A VR = 150 V, Tj = 100 C BAV20W-V IR 15 VR = 200 V BAV21W-V IR 100 nA VR = 200 V, Tj = 100 C BAV21W-V IR 15 A Dynamic forward resistance IF = 10 mA rf 5 VR = 0, f = 1 MHz CD 1.5 pF IF = 30 mA, IR = 30 mA, iR = 3 mA, RL = 100 trr Diode capacitace Reverse recovery time PART IF = 100 mA 50 ns Ptot - Admissible Power Dissipation (mW) TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) I F - Forward Current (mA) 1000 Tj = 100 C 100 10 25 C 1 0.1 0.01 0 0.2 0.4 0.6 0.8 0.2 DC current IF Current (rectif.) I O 0.1 0 18859 60 90 120 100 0 Tamb - Ambient Temperature (C) 40 80 120 160 200 Tamb - Ambient Temperature (C) Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature 100 10 1 1 150 Fig. 2 - Admissible Forward Current vs. Ambient Temperature Rev. 1.4, 06-Nov-12 200 0 rf - Dynamic Forward Resistance () I O , I F - Admissible Forward Current (A) 0.3 30 300 18860 Fig. 1 - Forward Current vs. Forward Voltage 0 400 1 VF - Forward Voltage (V) 18858 500 18861 10 100 IF - Forward Current (mA) Fig. 4 - Dynamic Forward Resistance vs. Forward Current Document Number: 85725 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAV19W-V, BAV20W-V, BAV21W-V www.vishay.com Vishay Semiconductors 100 10 Reverse Voltage BAV19WS-V VR = 100 V BAV20WS-V VR = 150 V BAV21WS-V VR = 200 V 1 0.1 0 40 80 120 160 Tj - Junction Temperature (C) 18862 2.0 1.8 CD - Diode Capacitance (pF) IR(Tj)/IR (25 C) - Leakage Current 1000 T j = 25 C 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 200 18863 Fig. 5 - Leakage Current vs. Junction Temperature 1 10 100 VR - Reverse Voltage (V) Fig. 6 - Capacitance vs. Reverse Voltage 100 IFSM (A) 10 1 TJ = 25 C - Prior to Surge 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 tp - Test Pulse (s) Fig. 7 - Non-Repetitive Peak Forward Current vs. Pulse Duration Maximum Admissible Values of Square Pulse Rev. 1.4, 06-Nov-12 Document Number: 85725 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAV19W-V, BAV20W-V, BAV21W-V www.vishay.com Vishay Semiconductors 0.10 (0.004) 0.15 (0.006) 8 0.45 (0.018) 0.25 (0.010) 0 to 0.2 (0.008) 1 (0.039) 1.35 (0.053) 0.1 (0.004) max. PACKAGE DIMENSIONS in millimeters (inches): SOD-123 0.5 (0.020) ref. Cathode bar Mounting Pad Layout 2.85 (0.112) 2.55 (0.100) 0.85 (0.033) 2.5 (0.098) 0.85 (0.033) 3.55 (0.140) 1.7 (0.067) 3.85 (0.152) 1.40 (0.055) 0.45 (0.018) 0.65 (0.026) 0.85 (0.033) Rev. 4 - Date: 24. Sep. 2009 Document no.: S8-V-3910.01-001 (4) 17432 Rev. 1.4, 06-Nov-12 Document Number: 85725 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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