MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# BUH517 Features * * * High voltage, fast switching NPN power transistors. With TO-3PML package Manufactured using multiepitaxial mesa technology for cost-effective high performance abd use a hollow emitter structure to enhance switching speeds. NPN Silicon Power Transistors Maximum Ratings Symbol V CEO V CBO V EBO ICP IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Peak Collector Current Collector Current Collector power dissipation Junction Temperature Storage Temperature Rating 700 1700 10 12 8.0 60 -55 to +150 -55 to +150 TO-3PML Unit V V V A A W O C O C Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Max Units Collector-Emitter Breakdown Voltage (IC=100mAdc, IB =0) Collector-Base Cutoff Current (VCB=1500Vdc,IE =0) Emitter-Base Cutoff Current (VEB =5.0Vdc, IC=0) 700 --- Vdc --- 0.2 mAdc --- 100 uAdc 6.0 12 --- --- 1.5 Vdc --- 1.3 Vdc OFF CHARACTERISTICS V (BR)CEO ICBO IEBO ON CHARACTERISTICS hFE V CE(sat) V BE(sat) Forward Current Transfer ratio (IC=5.0Adc, VCE=5.0Vdc) Collector-Emitter Saturation Voltage (IC=5.0Adc, IB =1.25Adc) Base-Emitter Saturation Voltage (IC=5.0Adc,IB=1.25Adc) DIMENSIONS DIM A B C D E F G H I J K L M N O P Q R S MIN .13 .81 .15 .10 .21 .21 .62 .19 .30 .07 .03 .13 .85 .78 .21 .11 .07 .07 .02 INCHES MAX .14 .84 .17 .12 .22 .22 .64 .21 .33 .09 .05 .15 .88 .82 .23 .13 .09 .09 .03 www.mccsemi.com MM MIN 3.20 20.70 3.80 2.50 5.25 5.25 15.80 4.70 7.70 1.70 .70 3.20 21.70 19.90 5.30 2.80 1.70 1.70 .40 MAX 3.60 21.30 4.20 3.10 5.65 5.65 16.20 5.30 8.30 2.30 1.30 3.80 22.30 20.90 5.90 3.40 2.30 2.30 .80 NOTE