MAC15N - ON Semiconductor - Product.Network

December, 2005 − Rev. 2 1Publication Order Number:

MAC15M/D

MAC15M, MAC15N

Preferred Device

Triacs

Silicon Bidirectional Thyristors

Designed for high performance full-wave AC control applications

where high noise immunity and high commutating di/dt are required.

Features

•Blocking Voltage to 800 Volts

•On-State Current Rating of 15 Amperes RMS at 80°C

•Uniform Gate Trigger Currents in Three Modes

•High Immunity to dv/dt − 250 V/ms minimum at 125°C

•Minimizes Snubber Networks for Protection

•Industry Standard TO-220AB Package

•High Commutating di/dt − 9.0 A/ms minimum at 125°C

•Operational in Three Quadrants, Q1, Q2, and Q3

•Pb−Free Packages are Available*

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit

Peak Repetitive Off−State Voltage (Note 1)

(−40 to 125°C, Sine Wave, 50 to 60 Hz,

Gate Open) MAC15M

MAC15N

VDRM,

VRRM 600

800

On−State RMS Current

(Full Cycle Sine Wave, 60 Hz, TC = 80°C) IT(RMS) 15 A

Peak Non-repetitive Surge Current

(One Full Cycle Sine Wave, 60 Hz,

TJ = 125°C)

ITSM 150 A

Circuit Fusing Consideration (t = 8.3 ms) I2t 93 A2s

Peak Gate Power

(Pulse Width ≤1.0 ms, TC = 80°C) PGM 20 W

Average Gate Power

(t = 8.3 ms, TC = 80°C) PG(AV) 0.5 W

Operating Junction Temperature Range TJ−40 to +125 °C

Storage Temperature Range Tstg −40 to +150 °C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

TRIACS

15 AMPERES RMS

600 thru 800 VOLTS

TO−220AB

CASE 221A−09

STYLE 4

http://onsemi.com

MAC15xG

AYWW

MARKING

DIAGRAM

x = M or N

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

Device Package Shipping

ORDERING INFORMATION

MAC15M TO−220AB 50 Units / Rail

MAC15N TO−220AB 50 Units / Rail

MAC15MG TO−220AB

(Pb−Free) 50 Units / Rail

MAC15NG TO−220AB

(Pb−Free) 50 Units / Rail

MT1

MT2

PIN ASSIGNMENT

3 Gate

Main Terminal 1

Main Terminal 2

4Main Terminal 2

Preferred devices are recommended choices for future use

and best overall value.

MAC15M, MAC15N

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THERMAL CHARACTERISTICS

Characteristic Symbol Value Unit

Thermal Resistance, Junction−to−Case

Thermal ResistanceJunction−to−Ambient RqJC

RqJA

2.0

62.5 °C/W

Maximum Lead Temperature for Soldering Purposes 1/8″ from Cas e for 10 Seconds TL260 °C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Peak Repetitive Blocking Current

(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C

TJ = 125°C

IDRM,

IRRM −

−−

−0.01

2.0

ON CHARACTERISTICS

Peak On-State Voltage (Note 2)

(ITM = ±21 A Peak) VTM − 1.2 1.6 V

Gate Trigger Current (Continuous DC) (VD = 12 V, RL = 100 W)

MT2(+), G(+)

MT2(+), G(−)

MT2(−), G(−)

IGT 5.0

5.0

Hold Current

(VD = 12 Vdc, Gate Open, Initiating Current = ±150 mA) IH− 20 40 mA

Latching Current (VD = 24 V, IG = 35 mA)

MT2(+), G(+)

MT2(+), G(−)

MT2(−), G(−)

IL−

−

Gate Trigger Voltage (VD = 12 V, RL = 100 W)

MT2(+), G(+)

MT2(+), G(−)

MT2(−), G(−)

VGT 0.5

0.5

0.75

0.72

0.82

1.5

DYNAMIC CHARACTERISTICS

Rate of Change of Commutating Current; See Figure 10.

(VD = 400 V, ITM = 6.0 A, Commutating dv/dt = 24 V/ms, CL = 10 mF

Gate Open, TJ = 125°C, f = 250 Hz, No Snubber) LL = 40 mH

(di/dt)c9.0 − − A/ms

Critical Rate of Rise of Off-State Voltage

(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C) dv/dt 250 − − V/ms

2. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

MAC15M, MAC15N

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+ Current

+ Voltage

VTM

Symbol Parameter

VDRM Peak Repetitive Forward Off State Voltage

IDRM Peak Forward Blocking Current

VRRM Peak Repetitive Reverse Off State Voltage

IRRM Peak Reverse Blocking Current

Voltage Current Characteristic of Triacs

(Bidirectional Device)

IDRM at VDRM

on state

off state

IRRM at VRRM

Quadrant 1

MainTerminal 2 +

Quadrant 3

MainTerminal 2 − VTM

VTM Maximum On State Voltage

IHHolding Current

MT1

(+) IGT

GATE

(+) MT2

REF

MT1

(−) IGT

GATE

(+) MT2

REF

MT1

(+) IGT

GATE

(−) MT2

REF

MT1

(−) IGT

GATE

(−) MT2

REF

−

MT2 NEGATIVE

(Negative Half Cycle)

MT2 POSITIVE

(Positive Half Cycle)

Quadrant III Quadrant IV

Quadrant II Quadrant I

Quadrant Definitions for a Triac

IGT −+ IGT

All polarities are referenced to MT1.

With in−phase signals (using standard AC lines) quadrants I and III are used.

MAC15M, MAC15N

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IT(RMS), RMS ON-STATE CURRENT (AMP)

125

120

115

110

105

100

80 1614121086420

TC, CASE TEMPERATURE ( C)°

IT(RMS), ON-STATE CURRENT (AMP)

1614121086420

PAV, AVERAGE POWER (WATTS)

α = 30 and 60°

α = 90°

α = 120°α = 180°

DC 180°

120°

90°

60°

α = 30°

VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

100

IT, INSTANTANEOUS ON-STATE CURRENT (AMP)

0.5 1 1.5 2 2.5 3 3.5 4

0.1

MAXIMUM @ TJ = 125°C

TYPICAL AT

TJ = 25°C

MAXIMUM @ TJ = 25°C

t, TIME (ms)

r(t), TRANSIENT THERMAL RESISTANCE(NORMALIZED)

0.1

0.01 1·10

10001001010.1

TJ, JUNCTION TEMPERATURE (°C)

−40

IH, HOLD CURRENT (mA)

5−10 20 50 80 110 125

MT2 POSITIVE

MT2 NEGATIVE

Figure 1. RMS Current Derating Figure 2. On−State Power Dissipation

Figure 3. On−State Characteristics

Figure 4. Transient Thermal Response

Figure 5. Hold Current Variation

MAC15M, MAC15N

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TJ, JUNCTION TEMPERATURE (°C)TJ, JUNCTION TEMPERATURE (°C)

IGT, GATE TRIGGER CURRENT (mA)

VGT, GATE TRIGGER VOLTAGE (VOLT)

−40 −10 20 50 80 110 125

100

OFF-STATE VOLTAGE = 12 V

RL = 140 W

0.5

−40 −10 +20 50 80 110 125

OFF-STATE VOLTAGE = 12 V

RL = 140 W

RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)

5000

010000100010010

dv/dt , CRITICAL RATE OF RISE OF OFF-STATE VOLTAGE

(di/dt)c, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)

(V/ s)μ

VD = 800 Vpk

TJ = 125°C

ITM

VDRM

(di/dt)c = 6f ITM

1000

f = 1

2 tw

TJ = 125°C100°C75°C

10 100

100

(dv/dt) , CRITICAL RATE OF RISE OF (V/ s)μ

cCOMMUTATING VOLTAGE

20 30 40 50 60 70 80 90

Figure 6. Typical Holding Current versus Junction

Temperature Figure 7. Gate Trigger Voltage versus Junction

Temperature

Figure 8. Critical Rate of Rise of Off−State Voltage

(Exponential) Figure 9. Critical Rate of Rise of

Commutating Voltage

Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)

LL1N4007

200 V

MEASURE

−

CHARGE

CONTROL

CHARGE TRIGGER

NON-POLAR

51 W

MT2

MT1

1N914

TRIGGER CONTROL

200 VRMS

ADJUST FOR

ITM, 60 Hz VAC

Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.

MAC15M, MAC15N

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PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

STYLE 4:

PIN 1. MAIN TERMINAL 1

2. MAIN TERMINAL 2

3. GATE

4. MAIN TERMINAL 2

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.035 0.64 0.88

F0.142 0.147 3.61 3.73

G0.095 0.105 2.42 2.66

H0.110 0.155 2.80 3.93

J0.018 0.025 0.46 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 −−− 1.15 −−−

Z−−− 0.080 −−− 2.04

123

SEATING

PLANE

−T−

TO−220AB

CASE 221A−09

ISSUE AA

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Phone: 81−3−5773−3850

MAC15M/D

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