Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
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▼ Capable of 2.5V gate drive BVDSS 20V
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▼ Lower on-resistance RDS(ON) 32mΩ
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▼ Surface mount package ID5.8A
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TA=25℃A
ID@TA=70℃A
IDM A
PD@TA=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient3Max. 78 ℃/W
Data and specifications subject to change without notice 200118052
AP1802GU
Pb Free Plating Product
Parameter Rating
Drain-Source Voltage 20
Gate-Source Voltage ±12
Continuous Drain Current3, VGS @ 4.5V 5.8
Continuous Drain Current3, VGS @ 4.5V 4.7
Pulsed Drain Current1,2 20
Total Power Dissipation 1.6
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.013
Thermal Data Parameter
Storage Temperature Range
G
D
S
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The 2021-8 J-lead package provides good on-resistance performance and
space saving like SC-70-6.
2021-8
D
D
D
D
G
SS
S
Electrical Characteristics@Tj=25oC(unless otherwise specified )
Symbol Parameter Test Conditions Min . Typ . Max . Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.02 - V/℃
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=6A - - 27 mΩ
VGS=4.5V, ID=5A - - 32 mΩ
VGS=2.5V, ID=3A - - 50 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.5 - 1.2 V
gfs Forward Transconductance VDS=5V, ID=5A - 13 - S
IDSS Drain-Source Leakage Current (Tj=25oC) VDS=20V, VGS=0V - - 1 uA
Drain-Source Leakage Current (Tj=70oC) VDS=16V ,VGS=0V - - 10 uA
IGSS Gate-Source Leakage VGS=±12V - - ±100 nA
QgTotal Gate Charge2ID=5A - 9 15 nC
Qgs Gate-Source Charge VDS=16V - 1.5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 4 - nC
td(on) Turn-on Delay Time2VDS=10V - 9 - ns
trRise Time ID=1A - 10 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=5V - 16 - ns
tfFall Time RD=10Ω-5-
ns
Ciss Input Capacitance VGS=0V - 620 990 pF
Coss Output Capacitance VDS=20V - 120 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 100 - pF
RgGate Resistance f=1.0MHz - 1.2 1.8 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=1.3A, VGS=0V - - 1.2 V
trr Reverse Recovery Time IS=5A, VGS=0V, - 20 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 11 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board , t <5sec ; 125 ℃/W at steady state.
AP1802GU
AP1802GU
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
0
4
8
12
16
20
0123
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=25oC
VG=1.5V
5.0V
4.5V
3.5V
2.5V
0
4
8
12
16
20
0123
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=150oC5.0V
4.5V
3.5V
2.5V
VG=1.5V
25
30
35
40
45
246810
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
Ω
Ω
Ω
)
ID=3A
TA=25oC
0.6
0.9
1.2
1.5
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=5A
VG=4.5V
0.2
0.6
1.0
1.4
1.8
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized VGS(th) (V)
0
1
2
3
4
5
0 0.2 0.4 0.6 0.8 1 1.2
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oCTj=150oC
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics Fig 12. Gate Charge Circuit
AP1802GU
0
2
4
6
8
10
12
0 4 8 121620
QG , Total Gate Charge (nC)
VGS , Gate to Source Voltage (V)
ID=5A
VDS =10V
VDS =12V
VDS =16V
10
100
1000
1 5 9 13 17 21 25
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MHz
Ciss
Coss
Crss
Q
VG
4.5V
QGS QGD
QG
Charge
0
10
20
30
0246
VGS , Gate-to-Source Voltage (V)
ID , Drain Current (A)
Tj=150 oCTj=25 oC
VDS =5V
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
Normalized Thermal Response (Rthja)
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 125℃
℃℃
℃/W
tT
0.02
0.01
0.1
1
10
100
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
ID (A)
100us
1ms
10ms
100ms
1s
DC
TA=25 oC
Single Pulse
