AP1802GU Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Capable of 2.5V gate drive Lower on-resistance D D D Surface mount package D 2021-8 S 20V RDS(ON) 32m ID G S BVDSS 5.8A S Description D Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. G The 2021-8 J-lead package provides good on-resistance performance and space saving like SC-70-6. S Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage Continuous Drain Current3, VGS @ 4.5V 12 V 5.8 A 4.7 A ID@TA=25 ID@TA=70 3 Continuous Drain Current , VGS @ 4.5V 1,2 IDM Pulsed Drain Current 20 A PD@TA=25 Total Power Dissipation 1.6 W TSTG Linear Derating Factor Storage Temperature Range 0.013 -55 to 150 W/ TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Data and specifications subject to change without notice Max. Value 78 Unit /W 200118052 AP1802GU Electrical Characteristics@Tj=25oC(unless otherwise specified ) Symbol Parameter Test Conditions BVDSS Drain-Source Breakdown Voltage BVDSS/Tj RDS(ON) 20 - - V Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA - 0.02 - V/ Static Drain-Source On-Resistance VGS=10V, ID=6A - - 27 m VGS=4.5V, ID=5A - - 32 m VGS=2.5V, ID=3A - - 50 m 0.5 - 1.2 V VDS=5V, ID=5A - 13 - S 1 uA VGS(th) Gate Threshold Voltage gfs IDSS Forward Transconductance VGS=0V, ID=250uA VDS=VGS, ID=250uA o VDS=20V, VGS=0V - - Drain-Source Leakage Current (Tj=70oC) VDS=16V ,VGS=0V - - 10 uA Gate-Source Leakage VGS=12V - - 100 nA ID=5A - 9 15 nC Drain-Source Leakage Current (Tj=25 C) IGSS Min . Typ . Max . Units 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=16V - 1.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 4 - nC VDS=10V - 9 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=1A - 10 - ns td(off) Turn-off Delay Time RG=3.3,VGS=5V - 16 - ns tf Fall Time RD=10 - 5 - ns Ciss Input Capacitance VGS=0V - 620 990 pF Coss Output Capacitance VDS=20V - 120 - pF Crss Rg Reverse Transfer Capacitance f=1.0MHz - 100 - pF Gate Resistance f=1.0MHz - 1.2 1.8 Min. - Typ. - Source-Drain Diode Symbol VSD Parameter Forward On Voltage2 Test Conditions IS=1.3A, VGS=0V trr Reverse Recovery Time IS=5A, VGS=0V, - 20 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 11 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board , t <5sec ; 125 /W at steady state. Max. Units 1.2 V AP1802GU 20 20 o T A =25 C 5.0V 4.5V 3.5V 2.5V 5.0V 4.5V 3.5V 2.5V 16 ID , Drain Current (A) ID , Drain Current (A) 16 o T A = 150 C 12 8 4 12 8 4 V G = 1 .5V V G = 1.5 V 0 0 0 1 2 0 3 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 2 3 Fig 2. Typical Output Characteristics 45 1.5 ID=5A V G =4.5V I D =3A o Normalized R DS(ON) T A =25 C 40 RDS(ON) (m ) 1 V DS , Drain-to-Source Voltage (V) 35 1.2 0.9 30 0.6 25 2 4 6 8 -50 10 0 50 100 150 o V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 5 1.8 4 3 IS(A) T j =150 o C Normalized VGS(th) (V) 1.4 T j =25 o C 2 1.0 0.6 1 0 0.2 0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 o V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 150 AP1802GU f=1.0MHz 1000 I D =5A C iss 10 V DS =10V V DS =12V V DS =16V 8 C (pF) VGS , Gate to Source Voltage (V) 12 6 C oss 100 C rss 4 2 10 0 0 4 8 12 16 1 20 5 Fig 7. Gate Charge Characteristics 13 17 21 25 Fig 8. Typical Capacitance Characteristics 100 Normalized Thermal Response (Rthja) 1 10 100us ID (A) 9 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) 1ms 1 10ms 100ms 1s DC 0.1 T A =25 o C Single Pulse 0.01 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t 0.01 T Single Pulse 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 125 /W 0.001 0.1 1 10 100 0.0001 0.001 V DS , Drain-to-Source Voltage (V) 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 30 VG ID , Drain Current (A) V DS =5V T j =25 o C QG T j =150 o C 20 4.5V QGS QGD 10 Charge 0 0 2 4 6 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Circuit Q