2SK3673-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Isolation Voltage Symbol V DS VDSX *5 ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25C Tc=25C Tch Tstg Viso *6 Ratings 700 700 10 40 30 10 242.2 40 5 2.16 80 +150 -55 to +150 2 Unit V V A A V A mJ kV/s kV/s W Equivalent circuit schematic Drain(D) Gate(G) C C kVrms Source(S) < *1 L=4.45mH, Vcc=70V,Tch=25C, See to Avalanche Energy Graph *2 Tch=150C < < < < *3 IF=-ID, -di/dt=50A/s, Vcc=BVDSS, Tch=150C *4 VDS =700V *5 VGS=-30V *6 t=60sec, f=60Hz Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Symbol V(BR)DSS VGS(th) Zero gate voltage drain current IDSS Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions ID=250A VGS=0V ID= 250A VDS=VGS VDS=700V VGS=0V Tch=25C Tch=125C VDS=560V VGS=0V VGS=30V VDS=0V ID=5A VGS=10V ID=5A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=5A VGS=10V Min. Max. 5.0 25 250 100 1.18 0.91 9.5 900 1350 140 210 8 12 22 33 6 9 40 60 9 14 25 37.5 4 6 8.5 13 5 RGS=10 VCC =350V ID=10A VGS=10V L=4.45mH Tch=25C IF=10A VGS=0V Tch=25C IF=10A VGS=0V -di/dt=100A/s Tch=25C Typ. 700 3.0 10 0.90 2.75 14.0 1.50 Units V V A nA S pF ns nC A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient http://store.iiic.cc/ Min. Typ. Max. 1.563 58.0 Units C/W C/W 1 2SK3673-01MR FUJI POWER MOSFET Characteristics 120 Allowable Power Dissipation PD=f(Tc) 16 Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25C 20V 100 10V 8.0V 7.0V 12 6.5V ID [A] PD [W] 80 60 8 40 6.0V 4 20 VGS=5.5V 0 0 0 25 50 75 100 125 0 150 5 10 15 20 25 VDS [V] Tc [C] Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25C 100 Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25C gfs [S] ID[A] 10 1 10 1 0.1 0 1 2 3 4 5 6 7 8 9 0.1 10 1 VGS[V] 2.00 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25C VGS=5.5V 10 ID [A] 4.0 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=5A,VGS=10V 6.0V 6.5V 3.5 1.75 1.50 7.0V 8.0V 10V 20V 1.25 RDS(on) [ ] RDS(on) [ ] 3.0 2.5 2.0 max. 1.5 typ. 1.0 1.00 0.5 0.0 0.75 0 4 8 12 16 -50 -25 0 25 50 75 100 125 150 Tch [C] ID [A] http://store.iiic.cc/ 2 2SK3673-01MR 7.0 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250A 12 Typical Gate Charge Characteristics VGS=f(Qg):ID=10A,Tch=25C 6.5 6.0 10 Vcc= 140V 350V 560V 5.5 max. 8 4.5 4.0 VGS [V] VGS(th) [V] 5.0 3.5 3.0 min. 2.5 6 4 2.0 1.5 2 1.0 0.5 0 0.0 -50 -25 0 25 50 75 100 125 0 150 5 10 15 Tch [C] 10 1 10 0 20 25 30 Qg [nC] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25C Ciss 10 -1 10 -2 Coss IF [A] C [nF] 10 1 Crss 10 -3 10 0 10 1 10 0.1 0.00 2 0.25 0.50 0.75 VDS [V] 10 3 1.00 1.25 1.50 1.75 2.00 VSD [V] Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10 700 Maximum Avalanche Energy vs. starting Tch E(AS)=f(starting Tch):Vcc=70V IAS=4A 600 tf 500 10 2 IAS=6A t [ns] EAS [mJ] td(off) td(on) 10 400 300 IAS=10A 1 200 tr 100 10 0 10 0 -1 10 0 10 1 0 25 50 75 100 125 150 starting Tch [C] ID [A] http://store.iiic.cc/ 3 Avalanche Current I AV [A] 2SK3673-01MR 10 2 10 1 10 0 FUJI POWER MOSFET Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=70V Single Pulse 10 -1 -2 10 -8 10 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 Zth(ch-c) [ C/W] tAV [sec] 10 1 10 0 10 -1 10 -2 10 -3 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/denshi/scd/ http://store.iiic.cc/ 4