TSOP48..SO1
Document Number 82093
Rev. 1.7, 01-Mar-05
Vishay Semiconductors
www.vishay.com
1
1
23
18294
IR Receiver Modules for Remote Control Systems
Description
The TSOP48..SO1 - series are miniaturized receivers
for infrared remote control systems. PIN diode and
preamplifier are assembled on lead frame, the epoxy
package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. TSOP48..SO1 is the
standard IR remote control receiver series, support-
ing all major transmission codes.
Features
• Photo detector and preamplifier in one
package
• Internal filter for PCM frequency
• Improved shielding against electrical
field
disturbance
• TTL and CMOS compatibility
• Output active low
• Low power consumption
Special Features
• Improved immunity against ambient light
• Suitable burst length ≥ 10 cycles/burst
Mechanical Data
Pinning:
1 = OUT, 2 = GND, 3 = VS
Parts Table
Block Diagram
Application Circuit
Part Carrier Frequency
TSOP4830SO1 30 kHz
TSOP4833SO1 33 kHz
TSOP4836SO1 36 kHz
TSOP4837SO1 36.7 kHz
TSOP4838SO1 38 kHz
TSOP4840SO1 40 kHz
TSOP4856SO1 56 kHz
30 kΩ
2
3
1
V
S
OUT
Demo-
GND
Pass
AGCInput
PIN
Band dulator
Control Circuit
16833
C1=
4.7 µF
TSOPxxxx
OUT
GND
Circuit
µC
R1=100Ω
+V
S
GND
Transmitter
with
TSALxxxx V
S
R
1
+C
1
recommended to suppress power supply
disturbances.
V
O
The output voltage should not be hold continuously at
a voltage below V
O=
3.3 V by the external circuit.
16842
e3
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2
Document Number 82093
Rev. 1.7, 01-Mar-05
TSOP48..SO1
Vishay Semiconductors
Absolute Maximum Ratings
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Electrical and Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Value Unit
Supply Voltage (Pin 2) VS- 0.3 to + 6.0 V
Supply Current (Pin 2) IS5mA
Output Voltage (Pin 1) VO- 0.3 to + 6.0 V
Output Current (Pin 1) IO5mA
Junction Temperature Tj100 °C
Storage Temperature Range Tstg - 25 to + 85 °C
Operating Temperature Range Tamb - 25 to + 85 °C
Power Consumption (Tamb ≤ 85 °C) Ptot 50 mW
Soldering Temperature t ≤ 10 s, 1 mm from case Tsd 260 °C
Parameter Test condition Symbol Min Typ. Max Unit
Supply Current (Pin 3) VS = 5 V, Ev = 0 ISD 0.8 1.2 1.5 mA
VS = 5 V,
Ev = 40 klx, sunlight
ISH 1.5 mA
Transmission Distance Ev = 0,
test signal see fig.1, IR diode
TSAL6200, IF = 250 mA
d35m
Supply Voltage VS4.5 5.5 V
Output Voltage Low (Pin 3) IOSL = 0.5 mA, Ee = 0.7 mW/m2,
test signal see fig. 1
VOSL 250 mV
Minimum Irradiance (56 kHz) Pulse width tolerance:
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig.1
Ee min 0.3 0.5 mW/m2
Minimum Irradiance
(30 - 40 kHz)
Pulse width tolerance:
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig.1
Ee min 0.2 0.4 mW/m2
Maximum Irradiance tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig. 1
Ee max 30 W/m2
Directivity Angle of half transmission
distance
ϕ1/2 ± 45 deg
TSOP48..SO1
Document Number 82093
Rev. 1.7, 01-Mar-05
Vishay Semiconductors
www.vishay.com
3
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Figure 1. Output Function
Figure 2. Pulse Length and Sensitivity in Dark Ambient
Figure 3. Output Function
E
e
T
t
pi
*
t
* t
pi
w10/fo is recommended for optimal function
V
O
V
OH
V
OL
t
16110
Optical Test Signal
(IR diode TSAL6200, IF = 0.4 A, 30 pulses, f = f0, T = 10 ms)
Output Signal
t
d1)
t
po2)
1)
7/f
0
<t
d
<15/f
0
2)
t
pi
–5/f
0
<t
po
< t
pi
+6/f
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1 1.0 10.0 100.0 1000.010000.0
E
e
– Irradiance ( mW/m
2
)
16908
Input Burst Duration
l= 950 nm,
optical test signal, fig.1
Output Pulse
t – Output Pulse Width ( ms )
po
E
e
t
V
O
V
OH
V
OL
t
600 ms 600 ms
T = 60 ms
T
on
T
off
94 8134
Optical Test Signal
Output Signal, ( see Fig.4 )
Figure 4. Output Pulse Diagram
Figure 5. Frequency Dependence of Responsivity
Figure 6. Sensitivity in Bright Ambient
T ,T – Output Pulse Width ( ms )
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1 1.0 10.0 100.0 1000.010000.0
E
e
– Irradiance ( mW/m
2
)
16909
To ff
l= 950 nm,
optical test signal, fig.3
To n
on off
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.7 0.9 1.1 1.3
f/f
0
– Relative Frequency
16925
f = f
0
"5%
Df ( 3dB ) = f
0
/10
E / E – Rel. Responsivity
e min e
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.01 0.10 1.00 10.00 100.00
E – Ambient DC Irradiance (W/m
2
)
16911
Correlation with ambient light sources:
10W/m
2
^1.4klx (Std.illum.A,T=2855K)
10W/m
2
^8.2klx (Daylight,T=5900K)
Ambient, l = 950 nm
E – Threshold Irradiance ( mW/m )
e min
2
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Document Number 82093
Rev. 1.7, 01-Mar-05
TSOP48..SO1
Vishay Semiconductors
Figure 7. Sensitivity vs. Supply Voltage Disturbances
Figure 8. Sensitivity vs. Electric Field Disturbances
Figure 9. Max. Envelope Duty Cycle vs. Burstlength
0.0
0.5
1.0
1.5
2.0
0.1 1.0 10.0 100.0 1000.0
DV
sRMS
– AC Voltage on DC Supply Voltage (mV)
16912
f = f
o
f = 10 kHz
E – Threshold Irradiance ( mW/m )
e min 2
f = 1 kHz
f = 100 Hz
E – Threshold Irradiance ( mW/m )
0.0 0.4 0.8 1.2 1.6
0.0
0.4
0.8
1.2
2.0
E – Field Strength of Disturbance ( kV/m )
2.0
94 8147
1.6
e min 2
f(E) = f
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0 20 40 60 80 100 120
Burst Length ( number of cycles / burst )
16913
f = 38 kHz, E
e
= 2 mW/m
2
Max. Envelope Duty Cycle
Figure 10. Sensitivity vs. Ambient Temperature
Figure 11. Relative Spectral Sensitivity vs. Wavelength
Figure 12. Directivity
0.0
0.1
0.2
0.3
0.4
0.5
0.6
–30–150 153045607590
T
amb
– Ambient Temperature ( qC )
16918
Sensitivity in dark ambient
E – Threshold Irradiance ( mW/m )
e min
2
0.0
0.2
0.4
0.6
0.8
1.0
1.2
750 850 950 1050 1150
λ-Wavelength ( nm )
16919
S( ) -Relative Spectral Sensitivityλ
rel
96 12223p2
0.4 0.2 0 0.2 0.4 0.6
0.6
0.9
0q
30q
10q20q
40q
50q
60q
70q
80q
1.0
0.8
0.7
d
rel
– Relative Transmission Distance
TSOP48..SO1
Document Number 82093
Rev. 1.7, 01-Mar-05
Vishay Semiconductors
www.vishay.com
5
Suitable Data Format
The circuit of the TSOP48..SO1 is designed in that
way that unexpected output pulses due to noise or
disturbance signals are avoided. A bandpass filter, an
integrator stage and an automatic gain control are
used to suppress such disturbances.
The distinguishing mark between data signal and dis-
turbance signal are carrier frequency, burst length
and duty cycle.
The data signal should fulfill the following conditions:
• Carrier frequency should be close to center fre-
quency of the bandpass (e.g. 38 kHz).
• Burst length should be 10 cycles/burst or longer.
• After each burst which is between 10 cycles and 70
cycles a gap time of at least 14 cycles is necessary.
• For each burst which is longer than 1.8 ms a corre-
sponding gap time is necessary at some time in the
data stream. This gap time should be at least 4 times
longer than the burst.
• Up to 800 short bursts per second can be received
continuously.
Some examples for suitable data format are: NEC
Code (repetitive pulse), NEC Code (repetitive data),
Toshiba Micom Format, Sharp Code, RC5 Code,
RC6 Code, R-2000 Code, Sony Code.
When a disturbance signal is applied to the
TSOP48..SO1 it can still receive the data signal. How-
ever the sensitivity is reduced to that level that no
unexpected pulses will occur.
Some examples for such disturbance signals which
are suppressed by the TSOP48..SO1 are:
• DC light (e.g. from tungsten bulb or sunlight)
• Continuous signal at 38 kHz or at any other fre-
quency
• Signals from fluorescent lamps with electronic bal-
last with high or low modulation ( see Figure 13 or Fig-
ure 14 ).
Figure 13. IR Signal from Fluorescent Lamp with low Modulation
Figure 14. IR Signal from Fluorescent Lamp with high Modulation
0 5 10 15 20
Time ( ms )
16920
IR Signal
IR Signal from fluorescent
lamp with low modulation
0 5 10 15 20
Time ( ms )
16921
IR Signal
IR Signal from fluorescent
lamp with high modulation
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Document Number 82093
Rev. 1.7, 01-Mar-05
TSOP48..SO1
Vishay Semiconductors
Package Dimensions in mm
16134
TSOP48..SO1
Document Number 82093
Rev. 1.7, 01-Mar-05
Vishay Semiconductors
www.vishay.com
7
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operatingsystems with respect to their impact on the health and safety of our employees and the public, as
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known as ozone depleting substances (ODSs).
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and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
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of ODSs listed in the following documents.
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respectively
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Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
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Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
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