© Semiconductor Components Industries, LLC, 2016
March, 2018 − Rev. 14 1Publication Order Number:
BCP56T1/D
BCP56 Series
NPN Silicon
Epitaxial Transistor
These NPN Silicon Epitaxial transistors are designed for use in
audio amplifier applications. The device is housed in the SOT−223
package, which is designed for medium power surface mount
applications.
Features
•High Current: 1.0 A
•The SOT−223 package can be soldered using wave or reflow. The
formed leads absorb thermal stress during soldering, eliminating the
possibility of damage to the die
•Available in 12 mm Tape and Reel
Use BCP56T1G to Order the 7 inch/1000 Unit Reel
Use BCP56T3G to Order the 13 inch/4000 Unit Reel
•PNP Complement is BCP53T1G
•S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO 80 Vdc
Collector−Base Voltage VCBO 100 Vdc
Emitter−Base Voltage VEBO 5 Vdc
Collector Current IC1 Adc
Collector Current − Peak (Note 1) ICM 2 Adc
Total Power Dissipation
@ TA = 25°C (Note 2)
Derate above 25°C
PD1.5
12 W
mW/°C
Operating and Storage
Temperature Range TJ, Tstg −65 to 150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Ambient
(surface mounted)
RqJA 83.3 °C/W
Maximum Temperature for
Soldering Purposes
Time in Solder Bath
TL260
10 °C
Sec
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
1. Reference SOA curve.
2. Device mounted on a FR−4 glass epoxy printed circuit board 1.575 in x
1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in.
SOT−223
CASE 318E
STYLE 1
MARKING DIAGRAM
COLLECTOR 2,4
BASE
1
EMITTER 3
MEDIUM POWER NPN SILICON
HIGH CURRENT TRANSISTOR
SURFACE MOUNT
123
4
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See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
1
AYW
XXXXXG
G
XXXXX = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
G= Pb−Free Package
(Note: Microdot may be in either location)
BCP56 Series
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Base Breakdown Voltage
(IC = 100 mAdc, IE = 0) V(BR)CBO 100 − − Vdc
Collector−Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0) V(BR)CEO 80 − − Vdc
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0) V(BR)EBO 5.0 − − Vdc
Collector−Base Cutoff Current
(VCB = 30 Vdc, IE = 0) ICBO − − 100 nAdc
Emitter−Base Cutoff Current
(VEB = 5.0 Vdc, IC = 0) IEBO − − 10 mAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = 5.0 mA, VCE = 2.0 V) All Part Types
(IC = 150 mA, VCE = 2.0 V) BCP56
BCP56−10
BCP56−16
(IC = 500 mA, VCE = 2.0 V) All Types
hFE 25
40
63
100
25
−
−
−
−
−
−
250
160
250
−
−
Collector−Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc) VCE(sat) − − 0.5 Vdc
Base−Emitter On Voltage
(IC = 500 mAdc, VCE = 2.0 Vdc) VBE(on) − − 1.0 Vdc
SWITCHING CHARACTERISTICS
Rise Time
(VCC = 30 Vdc, IC = 150 mA, IB1 = 15 mA) tr− 14 − ns
Delay Time
(VCC = 30 Vdc, IC = 150 mA, IB1 = 15 mA) td− 9 − ns
Storage Time
(VCC = 30 Vdc, IC = 150 mA, IB1 = 15 mA, IB2 = 15 mA) ts− 714 − ns
Fall Time
(VCC = 30 Vdc, IC = 150 mA, IB1 = 15 mA, IB2 = 15 mA) tf− 58 − ns
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 35 MHz) fT− 130 − MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%
BCP56 Series
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3
TYPICAL ELECTRICAL CHARACTERISTICS
hFE, DC CURRENT GAIN
100
10 1000100100.1
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 2. Current−Gain − Bandwidth Product
f, CURRENT‐GAIN — BANDWIDTH PRODUCT (MHz)
T
1000
100
10 100101.0 1000
C, CAPACITANCE (pF)
80
60
40
20
10
8.0
6.0
4.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitance
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
Figure 4. Collector Emitter Saturation Voltage
vs. Collector Current Figure 5. Base Emitter Saturation Voltage vs.
Collector Current
TA = 150°C
25°C
-55°C
TJ = 25°C
Cibo
Cobo
1000
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
10.10.010.001
0.01
0.1
1
1
0.10.010.001
0.2
0.3
0.4
0.6
0.8
0.9
1.1
1.2
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10 150°C
25°C
−55°C
0.5
0.7
1.0
IC/IB = 10
150°C
25°C
−55°C
1
VCE = 2 V
125°C
-65°C
BCP56 Series
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4
TYPICAL ELECTRICAL CHARACTERISTICS
1.0
0.8
0.6
0.4
0.2
0
IB, BASE CURRENT (mA)
0.05 0.1 0.2 0.5 2.0 5.0 10 20 50
VCE, COLLECTOR‐EMITTER VOLTAGE (VOLTS)
1.0
50
mA
100mA
TJ = 25°C
250mA 500mA
IC = 10mA
Figure 6. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A)
10.10.010.001
0.2
0.3
0.4
0.6
0.8
0.9
1.1
1.2
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
0.5
0.7
1.0
VCE = 2 V
150°C
25°C
−55°C
Figure 7. Collector Saturation Region
TA, AMBIENT TEMPERATURE (°C)
Figure 8. Safe Operating Area
1.6
0.8
0.0
10020016
0
PD, POWER DISSIPATION (W)
12040 14060 80
1.0
0.2
1.2
0.4
1.4
0.6
Figure 9. Power Derating Curve
VCE, COLLECTOR EMITTER VOLTAGE (V)
1001010.1
0.01
1
I
C
, COLLECTOR CURRENT (A)
0.1
100 mS
10 mS
1 mS
1 S
BCP56 Series
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5
ORDERING INFORMATION
Device Marking Package Shipping†
BCP56T1G BH SOT−223
(Pb−Free) 1000 / Tape & Reel
SBCP56T1G*
BCP56T3G BH SOT−223
(Pb−Free) 4000 / Tape & Reel
SBCP56T3G*
BCP56−10T1G BH−10 SOT−223
(Pb−Free) 1000 / Tape & Reel
SBCP56−10T1G*
BCP56−10T3G BH−10 SOT−223
(Pb−Free) 4000 / Tape & Reel
NSVBCP56−10T3G*
BCP56−16T1G BH−16 SOT−223
(Pb−Free) 1000 / Tape & Reel
SBCP56−16T1G*
BCP56−16T3G BH−16 SOT−223
(Pb−Free) 4000 / Tape & Reel
SBCP56−16T3G*
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable.
BCP56 Series
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6
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
A1
b1
D
E
b
e
e1
4
123
0.08 (0003)
A
L1
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
1.5
0.059 ǒmm
inchesǓ
SCALE 6:1
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091 2.3
0.091
2.0
0.079
SOLDERING FOOTPRINT*
HEDIM
AMIN NOM MAX MIN
MILLIMETERS
1.50 1.63 1.75 0.060
INCHES
A1 0.02 0.06 0.10 0.001
b0.60 0.75 0.89 0.024
b1 2.90 3.06 3.20 0.115
c0.24 0.29 0.35 0.009
D6.30 6.50 6.70 0.249
E3.30 3.50 3.70 0.130
e2.20 2.30 2.40 0.087
0.85 0.94 1.05 0.033
0.064 0.068
0.002 0.004
0.030 0.035
0.121 0.126
0.012 0.014
0.256 0.263
0.138 0.145
0.091 0.094
0.037 0.041
NOM MAX
L1 1.50 1.75 2.00 0.060
6.70 7.00 7.30 0.264 0.069 0.078
0.276 0.287
HE− −
e1
0°10°0°10°
q
q
L
L0.20 −−− −−− 0.008 −−− −−−
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
BCP56T1/D
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