SG3317 / SG3317(B) gktl Semiconductor LED Lamp Features * Colorless transparency lens type * 3mm(T-1) all plastic mold type * Available on tape Outline Dimensions unit : STRAIGHT TYPE mm STOPPER TYPE 5.30.2 5.30.2 2.90.2 2.90.2 5.20.5 0.4 23.0MIN 0.4 23.0MIN 1.0MIN 1.0MIN 2.54 NOM 2.54 NOM 1 2 3.6 0.2 1 2 3.80.2 3.80.2 KLG-9002-001 3.6 0.2 PIN Connections 1.Anode 2.Cathode 1 SG3317 / SG3317(B) Absolute maximum ratings Characteristic Symbol Ratings Unit Power Dissipation PD 85 mW Forward Current IF 30 mA IFP 50 mA Reverse Voltage VR 4 V Operating Temperature Topr -2585 Storage Temperature Tstg -30100 * Soldering Temperature Tsol 1 * Peak Forward Current 2 260 for 5 seconds *1.Duty ratio = 1/16, Pulse width = 0.1ms *2.Keep the distance more than 2.0mm from PCB to the bottom of LED package Electrical Characteristics Characteristic Symbol Test Condition Min Typ Max VF IF= 20mA - 2.1 2.8 V *4Luminous Intensity IV IF= 20mA 17 43 100 mcd Peak Wavelength P IF= 20mA - 557 - nm IF= 20mA - 30 - nm IR VR=4V - - 10 uA 1/2 IF= 20mA - 22 - deg Forward Voltage Spectrum Bandwidth Reverse Current 3 * Half Angle Unit *3. 1/2 is the off-axis angle where the luminous intensity is 1/2 the peak intensity *4. Luminous Intensity Maximum tolerance for each Grade Classification limit is 18% *4. Luminous Intensity classification H I 17~27 27~43 J K 43~68 68~100 KLG-9002-001 2 SG3317 / SG3317(B) Characteristic Diagrams Fig. 2 IV - IF Forward Current IF [mA] Luminous Intensity Iv [mcd] Fig. 1 IF - VF Forward Voltage VF [V] Forward Current IF [mA] Fig.4 Spectrum Distribution Forward Relative Intensity [%] Current IF [mA] Fig. 3 IF - Ta Ambient Temperature Ta [] Wavelength [nm] Fig. 5-1 Radiation Diagram Relative Luminous Intensity Iv [%] KLG-9002-001 3