09/17/09
www.irf.com 1
HEXFET® is a registered trademark of International Rectifier.
IRF1010EZ
IRF1010EZS
IRF1010EZL
HEXFET® Power MOSFET
S
D
G
VDSS = 60V
RDS(on) = 8.5mΩ
ID = 75A
Features
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
AUTOMOTIVE MOSFET
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional fea-
tures of this design are a 175°C junction operat-
ing temperature, fast switching speed and im-
proved repetitive avalanche rating . These fea-
tures combine to make this design an extremely
efficient and reliable device for use in Automotive
applications and a wide variety of other applica-
tions.
D2Pak
IRF1010EZS
TO-220AB
IRF1010EZ
TO-262
IRF1010EZL
Absolute Maximum Ratings
Parameter Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (See Fig. 9)
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM Pulsed Drain Current
c
PD @TC = 25°C Maximum Power Dissipation W
Linear Derating Factor W/°C
VGS Gate-to-Source Voltage V
EAS Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
EAS (tested) Single Pulse Avalanche Energy Tested Value
i
IAR Avalanche Current
c
A
EAR Repetitive Avalanche Energy
h
mJ
TJ Operating Junction and °C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.11 °C/W
RθCS Case-to-Sink, Flat, Greased Surface 0.50 –––
RθJA Junction-to-Ambient ––– 62
RθJA Junction-to-Ambient (PCB Mount, steady state)
j
––– 40
Max.
84
60
340
75
10 lbf•in (1.1N•m)
140
0.90
± 20
99
180
See Fig.12a,12b,15,16
300 (1.6mm from case )
-55 to + 175
PD - 94724C
IRF1010EZ/S/L
2www.irf.com
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.077mH,
RG = 25Ω, IAS = 51A, VGS =10V. Part not
recommended for use above this value.
ISD ≤ 51A, di/dt ≤ 260A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
S
D
G
S
D
G
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. T
y
p. Max. Units
V(BR)DSS Drain-to-Source Breakdown Volta
g
e60–––––– V
∆ΒVDSS
/
∆TJ Breakdown Volta
g
e Temp. Coefficien
t
––– 0.058 ––– V/°C
RDS(on) Static Drain-to-Source On-Resistanc
e
––– 6.8 8.5 mΩ
VGS(th) Gate Threshold Volta
g
e 2.0 ––– 4.0 V
g
fs Forward Transconductance 200 ––– ––– S
IDSS Drain-to-Source Leaka
g
e Current ––– ––– 20
µ
A
––– ––– 250
IGSS Gate-to-Source Forward Leaka
e ––– ––– 200 nA
Gate-to-Source Reverse Leaka
g
e ––– ––– -200
QgTotal Gate Char
g
e ––– 58 86 nC
Qgs Gate-to-Source Char
g
e ––– 19 28
Qgd Gate-to-Drain ("Miller") Char
g
e ––– 21 32
td(on) Turn-On Dela
y
Time ––– 19 ––– ns
trRise Time ––– 90 –––
td(off) Turn-Off Dela
y
Time ––– 38 –––
tfFall Time ––– 54 –––
LDInternal Drain Inductance ––– 4.5 ––– nH Between lead,
6mm (0.25in.)
LSInternal Source Inductance ––– 7.5 ––– from packa
g
e
and center of die contact
Ciss Input Capacitance ––– 2810 ––– pF
Coss Output Capacitance ––– 420 –––
Crss Reverse Transfer Capacitance ––– 200 –––
Coss Output Capacitance ––– 1440 –––
Coss Output Capacitance ––– 320 –––
Coss eff. Effective Output Capacitance ––– 510 –––
Diode Characteristics
Parameter Min. T
y
p. Max. Units
ISContinuous Source Current ––– ––– 84
(Body Diode) A
ISM Pulsed Source Current ––– ––– 340
(Body Diode)
c
VSD Diode Forward Voltage ––– ––– 1.3 V
trr Reverse Recovery Time ––– 41 62 ns
Qrr Reverse Recover
y
Char
g
e ––– 54 81 nC
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 51A
f
VDS = VGS, ID = 100µA
VDS = 60V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125°C
RG = 7.95Ω
ID = 51A
VDS = 25V, ID = 51A
VDD = 30V
ID = 51A
VGS = 20V
VGS = -20V
TJ = 25°C, IF = 51A, VDD = 30V
di/dt = 100A/
µ
s
f
TJ = 25°C, IS = 51A, VGS = 0V
f
showing the
integral reverse
p-n junction diode.
MOSFET symbol
VGS = 0V
VDS = 25V
VGS = 0V, VDS = 48V, ƒ = 1.0MHz
Conditions
VGS = 0V, VDS = 0V to 48V
VDS = 48V
VGS = 10V
f
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 10V
f
IRF1010EZ/S/L
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Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance
vs. Drain Current
0.01 0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
20µs PULSE WIDTH
Tj = 175°C
4.5V
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
45678910
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (Α)
TJ = 25°C
TJ = 175°C
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
10000
ID, Drain-to-Source Current (A)
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
20µs PULSE WIDTH
Tj = 25°C
4.5V
0 20 40 60 80 100 120 140
ID,Drain-to-Source Current (A)
0
10
20
30
40
50
60
70
80
90
100
Gfs, Forward Transconductance (S)
TJ = 25°C
TJ = 175°C
VDS = 25V
≤60µs PULSE WIDTH
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
110 100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C, Capacitance(pF)
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0 102030405060
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
VGS, Gate-to-Source Voltage (V)
VDS= 48V
VDS= 30V
VDS= 12V
ID= 51A
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-to-Drain Voltage (V)
0.10
1.00
10.00
100.00
1000.00
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
1 10 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
10000
ID, Drain-to-Source Current (A)
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
Tc = 25°C
Tj = 175°C
Single Pulse
IRF1010EZ/S/L
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Normalized On-Resistance
vs. Temperature
-60 -40 -20 020 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 84A
VGS = 10V
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.415 0.000246
0.410 0.000898
0.285 0.009546
τJ
τJ
τ1
τ1
τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
τ
τC
Ci i/Ri
Ci= τi/Ri
25 50 75 100 125 150 175
TC , Case Temperature (°C)
0
10
20
30
40
50
60
70
80
90
100
ID, Drain Current (A)
Limited By Package
IRF1010EZ/S/L
6www.irf.com
QG
QGS QGD
VG
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
Fig 14. Threshold Voltage vs. Temperature
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
50
100
150
200
250
300
350
400
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP 5.7A
9.1A
BOTTOM 51A
-75 -50 -25 025 50 75 100 125 150 175
TJ , Temperature ( °C )
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS(th) Gate threshold Voltage (V)
ID = 250µA
IRF1010EZ/S/L
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Fig 15. Typical Avalanche Current vs.Pulsewidth
Fig 16. Maximum Avalanche Energy
vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
0.1
1
10
100
1000
Avalanche Current (A)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆Tj = 25°C due to
avalanche losses
0.01
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
25
50
75
100
EAR , Avalanche Energy (mJ)
TOP Single Pulse
BOTTOM 1% Duty Cycle
ID = 51A
IRF1010EZ/S/L
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Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D = P. W .
Period
* VGS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
IRF1010EZ/S/L
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
TO-220AB Part Marking Information
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
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IRF1010EZ/S/L
10 www.irf.com
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
D2Pak (TO-263AB) Part Marking Information
'$7(&2'(
<($5 
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D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
IRF1010EZ/S/L
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TO-262 Part Marking Information
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
/2*2
5(&7,),(5
,17(51$7,21$/
/27&2'(
$66(0%/<
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
IRF1010EZ/S/L
12 www.irf.com
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 09/2009
TO-220AB package is not recommended for Surface Mount Application.
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/