©2003 Fairchild Semiconductor Corporation Rev. A1, June 2003
BF245A/BF245B/BF245C
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol Parameter Value Units
VDG Drain-Gate Voltage 30 V
VGS Gate-So urce Voltage -30 V
IGF Forward Gate Current 10 mA
PDTotal Device Dissipation @TA=25°C
Derate above 25°C350
2.8 mW
mW/°C
TJ, TSTG Operating and Storage Junction Temperature Range - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V(BR)GSS Gate-Source Breakdown Voltage VDS = 0, IG = 1µA-30V
VGS Gate-Source BF245A
BF245B
BF245C
VDS = 15V, ID = 200µA-0.4
-1.6
-3.2
-2.2
-3.8
-7.5
V
VGS(off) Gate-Source Cut-off Voltage VDS = 15V, ID = 10nA -0.5 -8 V
IGSS Gate Reverse Current VGS = -20V, VGS = 0 -5 nA
On Characteristics
IDSS Zero-Gate Voltage Drain Current
BF245A
BF245B
BF245C
VGS = 15V, VGS = 0 2
6
12
6.5
15
25
mA
On Characteristics
gfs Common Source Forward
Transconductance VGS = 15V, VGS = 0, f = 1KHz 3 6.5 mmhos
BF245A/BF245B/BF245C
N-Channel Amplifiers
• This device is designed for VHF/UHF amplifiers.
• Sourced from process 50.
1. Gate 2. Source 3. Drain
TO-92
1
©2003 Fairchild Semiconductor Corporation Rev. A1, June 2003
BF245A/BF245B/BF245C
Package Dimensions
Dimensions in Millimeters
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
©2003 Fairchild Semiconductor Corporation Rev. I2
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