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3 Volt Advanced Boot Block Flash

Memory

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

Preliminary Datasheet

Product Features

The 3 Volt Advanced Boot Block flash memory, manufactured on Intel’s latest 0.18 µm

technology, represents a featu re-rich solution at over all lower system cost. Th e 3 Volt Advanced

Boot Block flash memory products in x16 will be available in 48-lead TSOP and 48-ball CSP

packages. The x8 op tion of this prod uct family will only be available in 40-l ead TSOP and 48-

ball µBGA* packages. Additional information on this product family can be obtained by

accessing Intel’s website at: http://www.intel.com/design/flash.

■Flexible SmartVoltage Technology

—2.7 V–3.6 V Read/Program/Erase

—12 V VPP Fast Production Programming

■2.7 V or 1.65 V I/O Option

—Reduces Overall System Power

■High Performance

—2.7 V–3.6 V: 70 ns Max Access Time

■Optimized Block Sizes

—Eight 8-KB Blocks for Data,Top or

Bottom Locations

—Up to One Hundred Twenty-Seven 64-

KB Blocks for Code

■Block Locking

—VCC-Level Control through WP#

■Low Power Consumption

—9 mA Typical Read Current

■Absolute Hardware-Protection

—VPP = GND Option

—VCC Lockout Voltage

■Extended Temperature Operation

—–40 °C to +85 °C

■Automated Program and Block Erase

—Status Registers

■Intel® Flash Data Integrator Software

—Flash Memory Manager

—System Interrupt Manager

—Supports Parameter Sto rage, Streaming

Data (e.g., Voice)

■Extend ed Cycl ing Capab i li ty

—Minimum 100,000 Block Erase Cycles

Guaranteed

■Automatic Pow er Savings Feature

—Typical ICCS after Bus Inactivity

■Standard Surface Mount Packaging

—48-Ball CSP Packages

—40- and 48-Lead TSOP Packages

■Density and Footprint Upgradeable for

common package

—4-, 8-, 16-, 32- and 64-Mbit Densities

■ETOX™ VII (0.18 µ) Flash Technology

—28F160/320/640B3xC

—4-, 8-, 16-, and 32-Mbit also exist on

ETOX ™ V (0.4µ) and/or ETOX ™ VI

(0.25µ) Flash Technology

■x8 not recommended for new designs

■4-Mbit density not recommended for new

designs

Order Number: 290580-012

October 2000

Notice: This document contains preliminary information on new products in production. The

specifications are subject to change without notice. Verify with your local Intel sales office that

you have the latest datasheet before finalizing a design.

3UHOLPLQDU\

Information in this document is provided in connection with Intel® products. No license, express or implied, by estoppel or otherwise, to any

intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions of Sale for such products, Intel assumes no

liability whatsoever, and Intel disclaims any express or implied warranty, relating to sale and/or use of Intel products including liability or warranties

relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. Intel products

are not intended for use in medical, life saving, or life sustaining applications.

Intel may make changes to specifications and product descriptions at any time, without notice.

Designers must not rely on the absence or characteristics of any features or instructions marked "reserved" or "undefined." Intel reserves these for

future definition and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to them.

The 28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3 may contain design defects or errors known as errata which may cause

the product to deviate from published specifications. Current characterized errata are available on request.

Contact your local Intel sales office or your distributor to obtain the latest specifications and before placing your product order.

Copies of documents which have an ordering number and are referenced in this document, or other Intel literature may be obtained by calling 1-800-

548-4725 or by visiting Intel's website at http://www.intel.com.

*Other brands and names are the property of their respective owners.

3UHOLPLQDU\ iii
 28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
Contents
0 Introduction..................................................................................................................1
1 Product Overview..................................................................................................2
0 Product Description..................................................................................................3
1 Package Pinouts ...................................................................................................3
2 Block Organization................................................................................................7
2.1 Parameter Blocks.....................................................................................7
2.2 Main Blocks..............................................................................................7
0 Principles of Operation............................................................................................7
1 Bus Operation .......................................................................................................7
1.1 Read.........................................................................................................8
1.2 Output Disable..........................................................................................8
1.3 Standby....................................................................................................8
1.4 Deep Power-Down / Reset.......................................................................8
1.5 Write.........................................................................................................9
2 Modes of Operation...............................................................................................9
2.1 Read Array...............................................................................................9
2.2 Read Identifier........................................................................................11
2.3 Read Status Register.............................................................................11
2.4 Program Mode............. ....... ...... ...... ....... ...... .................... ................... ....1 2
2.5 Erase Mode............................................................................................12
3 Block Locking......................................................................................................14
3.1 WP# = VIL for Block Locking ..................................................................14
3.2 WP# = VIH for Block Unlocking ..............................................................15
4 VPP Program and Erase Voltages.......................................................................15
4.1 VPP = VIL for Complete Protection .........................................................15
5 Power Consumption............................................................................................15
5.1 Active Power ..........................................................................................16
5.2 Automatic Power Savings (APS)............................................................16
5.3 Standby Power.......................................................................................16
5.4 Deep Power-Down Mode.......................................................................16
6 Power-Up/Down Op eration ................................ ...... .................... ...... .................1 6
6.1 RP# Connected to System Reset...........................................................17
6.2 VCC, VPP and RP# Transitions...............................................................17
7 Power Supply Decoupling...................................................................................17
0 Electrical Specifica tions........................................................................................18
1 Absolute Maximum Ratings.................................................................................18
2 Operating Conditions...........................................................................................19
3 Capacitance ........................................................................................................19
4 DC Characterist ics ................... ....... ...... ................... ....... ................... ....... ..........20
5 AC Characteristics —Read Operations...............................................................23
6 AC Characteristics —Write Operations...............................................................27
7 Program and Erase Timings................................................................................31

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
iv 3UHOLPLQDU\
5.0 Reset Operations .....................................................................................................33
6.0 Ordering Infor mat ion..............................................................................................34
7.0 Additional Information...........................................................................................36
Appendix A Write State Machine Current/Next States.................................................37
Appendix B Architecture Block Diagram...........................................................................38
Appendix C Word-Wide Memory Map Diagrams.............................................................39
Appendix D Byte-Wide Memory Map Diagrams..............................................................45
Appendix E Program and Erase Flowcharts....................................................................48

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28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

Revision History

Number Description

-001 Original version

-002

Section 3.4,

Program and Erase Voltages

, added

Updated Figure 9:

Automated Block Erase Flowchart

Updated Figure 10:

Erase Suspend/Resume Flowchart

(added program to table)

Updated Figure 16:

AC Waveform: Program and Erase Operations

(updated notes)

IPPR maximum specification change from ±25 µA to ±50 µA

Program and Erase Suspend Latency specification change

Updated Appendix A:

Ordering Information

(included 8 M and 4 M information)

Updated Figure, Appendix D:

Architecture Block Diagram

(Block info. in words not bytes)

Minor wording changes

-003

Combined byte-wide specification (previously 290605) with this document

Improved speed specification to 80 ns (3.0 V) and 90 ns (2.7 V)

Improved 1.8 V I/O option to minimum 1.65 V (Section 3.4)

Improved several DC characteristics (Section 4.4)

Improved several AC characteristics (Sections 4.5 and 4.6)

Combined 2.7 V and 1.8 V DC characteristics (Section 4.4)

Added 5 V VPP read specification (Section 3.4)

Removed 120 ns and 150 ns speed offerings

Moved

Ordering Information

from Appendix to Section 6.0; updated information

Moved

Additional Information

from Appendix to Section 7.0

Updated figure Appendix B,

Access Time vs. Capacitive Load

Updated figure Appendix C,

Architecture Block Diagram

Moved Program and Erase Flowcharts to Appendix E

Updated

Program Flowchart

Updated

Program Suspend/Resume Flowchart

Minor text edits throughout

-004

Added 32-Mbit density

Added 98H as a reserved command (Table 4)

A1–A20 = 0 when in read identifier mode (Section 3.2.2)

Status register clarification for SR3 (Table 7)

VCC and VCCQ absolute maximum specification = 3.7 V (Section 4.1)

Combined IPPW and ICCW into one specification (Section 4.4)

Combined IPPE and ICCE into one specification (Section 4.4)

Max Parameter Block Er ase Time (tWHQV2/tEHQV2) reduced to 4 sec (Section 4.7)

Max Main Block Erase Time (tWHQV3/tEHQV3) reduced to 5 sec (Section 4.7)

Erase suspend time @ 12 V (tWHRH2/tEHRH2) changed to 5 µs typical and 20 µs maximum

(Section 4.7)

Ordering Information

updated (Section 6.0)

Write State Machine Current/Next St ates Table updated (Appendix A)

Program Suspend/Resume Flowchart updated (Appendix F)

Erase Suspend/Resume Flowchart updated (Appendix F)

Text clarifications throughout

-005

µBGA package diagrams corrected (Figures 3 and 4)

IPPD test conditions corrected (Section 4.4)

32-Mbit ordering information corrected (Section 6)

µBGA package top side mark information added (Section 6)

-006

VIH and VILSpecification change (Section 4.4)

ICCS test conditions clarification (Section 4.4)

Added Command Sequence Error Note (Tab le 7)

Datasheet renamed from

Smart 3 Advanced Boot Block 4-Mbit, 8-Mbit, 16-Mbit Flash

Memory Family.

Added device ID information for 4-Mbit x8 device

Removed 32-Mbit x8 to reflect product offerings

Minor text changes

-007 Corrected RP# pin description in Table 2,

3 Vol t Advanced Boot Block Pin Descriptions

Corrected typographical error fixed in

Ordering Information

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

vi 3UHOLPLQDU\

-008 4-Mbit packaging and addressing information corrected throughout document

-009 Corrected 4-Mbit memory addressing tables in Appendices D and E

-010 Max ICCD changed to 25 µA

VCCMax on 32 M (28F320B3) changed to 3.3 V

-011 Added 64-Mbit density and faster speed offerings

Removed access time vs. capacitance load curve

-012

Changed references of 32Mbit 80ns devices to 70ns devices to reflect the faster product

offering.

Changed VccMax=3.3V reference to indicate the affected product is the 0.25 µm 32Mbit

device.

Minor text edits throughout document.

Number Description

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
3UHOLPLQDU\ 1
1.0 Introduction
This datasheet contains the specifications for the 3 Volt Advanced Boot Block flash memory 
family, which is op timized for low power, portable systems. This family of prod ucts features 
1.65 V–2.5 V or 2.7 V–3.6 V I/Os and a low VCC/VPP operati ng range  of 2.7 V–3 .6 V for read, 
program, and erase operations. In addition this family is capable of fast programming at 12 V. 
Throughout this doc ument, the term “2.7 V” refers to the full voltage rang e 2.7 V–3.6 V (except 
where noted otherwise) and “VPP = 12 V” refers to 12 V ±5%. Section 1.0 and 2.0 provide an 
overview of the flash memory family including applications, pinouts and pin descriptions. Section 
3.0 describes the memory organization and operation for these products. Sections 4.0 and 5.0 
contain the operating specifications. Finally, Sections 6.0 and 7.0 provide ordering and other 
reference information.
The 3 Volt Advanced Boot Block flash memory features:
•Enhanced blocking for easy segmentation of code and data or additional design flexibility
•Program Suspend to Read command
•VCCQ input of 1.65 V–2.5 V on all I/Os. See Figures 1 through 4 for pinout diagrams and 
VCCQ location
•Maximum program and erase time specification for improved data storage.
NOTES:
1. 32-Mbit and 64-Mbit densities not available in 40-lead TSOP.
2. 4-Mbit density not available in µBGA* CSP.
3. VCCMax is 3.3 V on 0.25µm 32-Mbit devices.
4. 4- and 64-Mbit densities not available on 48-Ball VF BGA.
Table 1.  3 Volt Advanced Boot Block Feature Summary
Feature 28F004B3(2), 28F008B3,  
28F016B3
28F400B3(2), 28F800B3,  
28F160B3, 28F320B3(3), 
28F640B3 Reference
VCC Read Voltage 2.7 V– 3.6 V Section 4.2, 
Section 4.4
VCCQ I/O V oltage 1.65 V–2.5 V or 2.7 V– 3.6 V Section 4.2, 4.4
VPP Program/Erase Voltage 2.7 V– 3.6 V or 11.4 V– 12.6 V Section 4.2, 4.4
Bus Width 8 bit 16 bit Table 3
Speed 70 ns, 80 ns, 90 ns, 100 ns, 110 ns Section 4.5
Memory Arrangement
512 Kbit x 8 (4 Mbit)
1024 Kbit x 8 (8 Mbit),
2048 Kbit x 8 (16 Mbit)
256 Kbit x 16 (4 Mbit),
512 Kbit x 16 (8 Mbit),
1024 Kbit x 16 (16 Mbit), 
2048 Kbit x 16 (32 Mbit), 
4096 Kbit x 16 (64 Mbit)
Section 2.2
Blocking (top or bottom)
Eight 8-Kbyte parameter blocks and
Seven 64-Kbyte blocks (4 Mbit) or
Fifteen 64-Kbyte blocks (8 Mbit) or
Thirty-one 64-Kbyte main blocks (16 Mbit)
Sixty-three 64-Kbyte main blocks (32 Mbit)
One hundred twenty-seven 64-Kbyte main blocks (64 Mbit)
Section 2.2
Appendix C
Locking WP# locks/unlocks parameter blocks
All other blocks protected using VPP Section 3.3
Table 8
Operating Temperature Extended: –40 °C to +85 °C Section 4.2, 4.4
Program/Erase Cycl ing 100,000 cycles Section 4.2, 4.4
Packages 40-lead TSOP(1), 
48-Ball  µBGA* CSP(2) 48-Lead TSOP, 
48-Ball  µBGA CSP (2), 
48-Ball VF BGA(4) Figure 3, Figure 4

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
23UHOLPLQDU\
1.1 Product Overview
Intel provides the most flexibl e  voltage solution in the flash industry, prov iding three discrete 
voltage sup pl y pi ns : VCC for rea d operation, VCCQ for output swing, and VPP for program and 
erase operation. All 3 Volt Advanced Boot Block flash memory products provide program/erase 
capability at 2.7 V or 12 V (for fas t production program mi ng)  and read with VCC at 2.7 V. Since 
many designs read fro m the flash memory a larg e percentage of the time, 2.7 V VCC operation can 
provid e substantial power savings.
The 3 Volt Advanced Boot Block  flash memory  products ar e available in either  x8 or  x16  packages 
in the following  den sities: (see Section 6.0, “Ordering Information” on page 34 for availability.)
•4-Mbit (4,194,304-bit) flash memory organized as 256 Kwords of 16 bits each or 512 Kbytes 
of 8-bits each
•8-Mbit (8,388,608- bit) flash memory  or ganized as 5 12 Kwords of  16 bits each or 1 024 Kbytes 
of 8-bits each
•16-Mbit (16,777,216-bit) flash memory organized as 1024 Kwords of 16 bits each or 
2048 Kbytes of 8-bits each
•32-Mbit (33,554,432-bit) flash memory organized as 2048 Kwords of 16 bits each
•64-Mbit (67,108,864-bit) flash memory organized as 4096 Kwords of 16 bits each
The parameter blocks are located at either the top (denoted by -T suffix) or the bottom (-B suffix) 
of the address map in order to accommodate different microprocessor protocols for kernel code 
location. The upper two (or lower two) parameter blocks can be locked to provide complete code 
security for system initialization co de. Locking and unlocking is controlled by WP# (see Section 
3.3, “Block Locking” on page 14 for de tails).
The Command User Interface (CUI) serves as the interface between the microprocessor or 
microcontroller and the internal operation of the flash memory. The internal Write State Machine 
(WSM) automatically executes the algorithms and timings necessary for program and erase 
operations, including verification, thereby un-burdening the microprocessor or microcontroller. 
The status register indicates the status of the WSM by signifying block erase or word program 
completion and status.
The 3 Vo lt Advanced Boot Block flash mem ory is also designed with an Automatic Power Savin gs 
(APS) feature which minimizes system current drain, allowing for very low power designs. This 
mode is entered following the completion of a read cycle (approximately 300 ns later).
The RP# pin provides additional protection against unwanted command writes that may occur 
during system  reset and power-up/down sequences d ue to invalid system bus conditions (see 
Section 3.6, “Power-Up/Down Operation” on page 16).
Section 3.0, “Princip les of Operation” on page 7 gives detailed explanation of the different modes 
of operation. Complete current and voltage specifications can be found in Section 4.4, “DC 
Characteristics” on page 20. Refer to Section 4.5, “AC Characteristics —Read Operations” on 
page 23 for read, program and erase performance specifications.

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

3UHOLPLQDU\ 3

2.0 Product Description

This section explains device pin description and package pinouts.

2.1 Package Pinouts

The 3 Volt Advanced Boot Block flash memory is available in 40-lead TSOP (x8, Figure 1),

48-lead TSOP (x16, Fi gure 2) and 48-ball µBGA(x8 and x16, Figure 3 and Figure 4, respectively)

and 48-ball VF BGA (x16, Figure 4) packages. In all figures, pin changes necessary for density

upgrades have been circled.

0580_01

NOTES:

1. 40-Lead TSOP available for 8- and 16-Mbit densities only.

2. Lower densities will have NC on the upper address pins. For example, an 8-Mbit device will have NC on

Pin 38.

Figure 1. 40-Lead TSOP Package for x8 Configurations

GND

CCQ

OE#

GND

CE#

WE#

RP#

WP#

16 M

8 M

Advanced Boot Block

40-Lead TSOP

10 mm x 20 mm

TO P V IEW

4 M

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

43UHOLPLQDU\

0580_02

NOTE: Lower densities will have NC on the upper address pins. For example, an 16-Mbit device will have NC

on Pins 9 and 10.

0580_04

NOTES:

1. Shaded connections indicate the upgrade address connections. Lower density devices will not have the

upper address solder balls. Routing is not recommended in this area. A20 is the upgrade address for the

16-Mbit device.

2. 4-Mbit density not available in µBGA* CSP.

Figure 2. 48-Lead TSOP Package for x16 Configurations

Advanced Boot Block

48-Lead TSOP

12 mm x 20 mm

TOP VIEW

CCQ

GND

WE#

RP#

WP#

OE#

GND

CE#

32 M

16 M

64 M

Figure 3. x8 48-Ball µBGA* Chip Size Package (Top View, Ball Down)

CCQ

WE#

RP#

WP#

CE#

GND

GND D

NC D

OE#

13254768

16M

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

3UHOLPLQDU\ 5

0580_03

NOTES:

1. Shaded connections indicate the upgrade address connections. Lower density devices will not have the

upper address solder balls. Routing is not recommended in this area. A19 is the upgrade address for the

16-Mbit device. A20 is the upgrade address for t he 32-Mbit device. A 21 is the upgrade address for the 64-Mbit

device.

2. 4-Mbit density not available in µBGA CSP.

Table 2, “3 Volt Advanced Boot Block Pin Descripti ons” on page 6 details the usage of each device

pin.

Figure 4. x16 48-Ball Very Thin Profile Pitch BGA and µBGA* Chip Size Package (Top View,

Ball Down)

CCQ

WE#

RP#

WP#

CE#

GND

GND D

OE#

13254768

16M

32M

64M

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

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Table 2. 3 Volt Advanced Boot Block Pin Descriptions

Symbol Type Name and Function

A0–A21 INPUT

ADDRESS INPUTS for memory addresses. Addresses are internally latched during a program or

erase cycle.

28F004B3: A[0-18], 28F008B3: A[0-19], 28F016B3: A[0-20],

28F400B3: A[0-17], 28F800B3: A[0-18], 28F160B3: A[0-19],

28F320B3: A[0-20], 28F640B3: A[0-21]

DQ0–DQ7INPUT/

OUTPUT

DATA INPUTS/OUTPUTS: Inputs array data on the second CE# and WE# cycle during a Program

command. Inputs commands to the Command User Interface when CE# and WE# are active. Data is

internally latched. Outputs array, identifier and status register data. The data pins float to tri-stat e when

the chip is de-selected or the outputs are disabled.

DQ8–

DQ15 INPUT/

OUTPUT

DATA INPUTS/OUTPU TS: Inputs array data on the second CE# and WE# cycle during a Program

command. Data is internally latched. Outputs array and identifier data. The data pins float to tri-state

when the chip is de-selected. Not inclu ded on x8 products.

CE# INPUT CHIP ENABLE: Activates the internal control logic, input buffers, decoders and sense amplifiers. CE#

is active low. CE# high de-selects the memory device and reduces power consumption to standby

levels.

OE# INPUT OUTPUT ENABLE: Enables the device’s outputs through the data buffers during a read operation.

OE# is active low.

WE# INPUT WRITE ENABLE: Controls writes to the Command Register and memory array. WE# is active low.

Addresses and data are latched on the rising edge of the second WE# pulse.

RP# INPUT

RESET/DEEP POWER-DOWN: Uses two voltage levels (VIL, VIH) to control reset/deep power-down

mode.

When RP# is at logic low , the device is in reset/deep power- down mode, which drives the outputs

to High-Z, resets the Write State Machine, and minimizes current levels (ICCD).

When RP# is at logic high, the device is in standard operation. When RP# transitions from logic-

low to logic-high, the device defaults to the read array mode.

WP# INPUT

WRITE PROTECT: Provides a method for locking and unlocking the two lockable parameter blocks.

When WP# is at logic low, the lockable blo cks are locked, preventing program and erase

operations to those blocks. If a program or erase operation is attempted on a locked block, SR.1 and

either SR.4 [program] or SR.5 [erase] will be set to indicate the operation failed.

When WP# is at logic high, the lockable blocks are unlocked and can be programmed or erased.

See Section 3.3 for details on write protection.

VCCQ INPUT

OUTPUT VCC: Enables all outputs to be driven to 1.8 V – 2.5 V while the VCC is at 2.7 V –3.3 V. If the

VCC is regulated to 2.7 V–2.85 V, VCCQ can be driven at 1.65 V–2.5 V to achieve lowest power

operation (see Section 4.4

)

This input may be tied directly to VCC (2.7 V–3.6 V).

VCC DEVICE POWER SUPPLY: 2.7 V–3.6 V

VPP

PROGRAM/ERASE POWER SUPPLY: Supplies power for program and erase operations. VPP may

be the same as VCC (2.7 V–3.6 V ) for single supply voltage operation. For fast programming at

manufacturing, 11.4 V–12.6 V may be supplied to VPP. This pin cannot be left floating. Applying

11.4 V–12.6 V to VPP can only be done for a maximum of 1000 cycles on the main blocks and 2500

cycles on the parameter blocks. VPP may be connected to 12 V for a total of 80 hours maximum (see

Section 3.4 for details).

VPP < V PPLK protects memory contents against inadvertent or unintended program and erase

commands.

GND GROUND: For all internal circuitry. All ground inputs must be connected.

NC NO CONNECT: Pin may be driven or left floating.

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

3UHOLPLQDU\ 7

2.2 Block Organization

The 3 Volt Advanced Boot Block is an asymmetrically-blocked architecture that enables system

integration of code and data within a single flash device. Each block can be erased independently

of the others up to 1 00 ,000 times. For the add ress locations of each block, see the memory maps in

Appendix C.

2.2.1 Parameter Blocks

The 3 Volt Advanced Boot Block flash memo ry architecture in cludes parameter blocks to facilitate

storage of frequently updated small parame ters (e.g., data th at would normally be stored in an

EEPROM). By using software techniques, the word-rewrite function ality of EEPROMs can be

emulated. Each device contains eight parameter blocks of 8-Kbytes/4-Kwords (8192 bytes/4,096

words) each.

2.2.2 Main Blocks

After the parameter blocks, the remainder of the array is divided into equal size main blocks

(65,536 bytes/32,768 words) for data or code storage. The 4-Mbit device contains seven main

blocks; 8-Mbit device contains fifteen main blocks; 16-Mbit flash has thirty-one main blocks;

32-Mbit has sixty-three main blocks; 64-Mbit has one hundred twenty-seven main blocks.

3.0 Principles of Operation

Flash memory combines EEPROM functionality with in-circuit electrical program and erase

capability. The 3 Vo lt Advanced Boot B lo ck flash memory family utilizes a Co m mand User

Interface (CUI) and automated algorithms to simplify program and erase operations. The CUI

allows for 100% CMOS- l evel control input s and fixed power suppl i es duri ng erasu re and

programming.

When VPP < VPPLK, the device will only execute the following commands successfully: Read

Array, Read Status Register, Clear Status Register and Read Identifier. The device provides

standard EEPROM read, standby and output disable operations. Manufacturer identification and

device identification data can be accessed through the CUI. All functions associated with altering

memory contents, namely program and erase, are accessible via the CUI. The internal Write State

Machine (WSM) completely automates program and erase operations wh ile the CUI signals the

start of an operation and the status reg ister reports status. The CUI handles the WE# interface to the

data and address latches, as well as system status requests during WSM operation.

3.1 Bus Operation

3 Volt Advan ced Boot Block flash memory devices read, program and erase in-system via the local

CPU or microcontroller. All bus cycles to or from the flash memory conform to standard micro-

controller bus cycles. Four control pins dictate the data flow in and out of the flash component:

CE#, OE#, WE# and RP#. These bus operations are summarized in Table 3.

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

83UHOLPLQDU\

NOTES:

1. 8-bit devices use only DQ[0:7], 16-bit devices use DQ[0:15].

2. X must be VIL, VIH for control pins and addresses.

3. See

DC Characteristics

for VPPLK, VPP1, VPP2, VPP3, VPP4 voltages.

4. Manufacturer and device codes may also be accessed in read identifier mode (A1–A21 = 0). See Table 5.

5. R efe r to Table 6 for valid DIN during a write operation.

6. To program or erase the lockable blocks, hold WP# at VIH.

7. RP# must be at GND ± 0.2 V to meet the maximum deep power-down current specified.

3.1.1 Read

The flash memory has four read modes available: read array, read identifier, read status and read

query. These modes are accessible independent of the VPP voltage. The appropriate Read Mode

command must be issued to the CUI to enter the corresponding mode. Upon initial d evice power-

up or after exit from reset, the device autom atically defaults to read array mode.

CE# and OE# must be driven active to obtain data at the outputs. CE# is the device selection

control; when active it enables the flash memory device. OE# is the data output control and it

drives the selected memory data onto the I/O bus. For all read modes, WE# and RP# must be at

VIH. Figure 7 illustrates a read cycle.

3.1.2 Output Disable

With OE# at a logic-high level (VIH), the device outputs are disabled. Output pins are placed in a

high-impedance state.

3.1.3 Standby

Deselecting the device by bringing CE# to a logic-high level (VIH) places the device in standby

mode, which substantially reduces device power consumption without any latency for subsequent

read accesses. In standby, outputs are placed in a high-impedance state independent of OE#. If

deselected during program or erase operation, the device continues to consume active power until

the program or erase operation is complete.

3.1.4 Deep Power-Down / Reset

From read mode, RP# at VIL for time tPLPH deselects the memory, places output drivers in a high-

impedance state, and turn s off all internal circuits. After return from reset, a time tPHQV is required

until the initial read access outputs are valid. A delay (tPHWL or tPHEL) is req uired after retu rn from

reset before a write can be initiated. After this wake-up interval, normal operation is restored. The

CUI resets to read array mode, and the status register is set to 80H. This case is shown in

Figure 9A.

Table 3. Bus Operations(1)

Mode Note RP# CE# OE# WE# DQ0–7 DQ8–15

Read (Array, Status, or Identifier) 2–4 VIH VIL VIL VIH DOUT DOUT

Output Disable 2 VIH VIL VIH VIH High Z High Z

Standby 2 VIH VIH X X High Z High Z

Reset 2, 7 VIL X X X High Z High Z

Write 2, 5–7 VIH VIL VIH VIL DIN DIN

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

3UHOLPLQDU\ 9

If RP# is taken low for time tPLPH during a program or erase operation, the operation will be

aborted and th e memo ry conten ts at the abo rted locatio n (for a p rog ram) or block (for an erase) ar e

no longer valid, since th e data may be partially erased or written. The abort process goes through

the following sequence: When RP# goes low, the device shuts down the operation in progress, a

process which takes time tPLRH to complete. After this time tPLRH, the part will either reset to read

array mode (if R P# ha s go ne hi gh dur ing tPLRH, Figure 9B) or enter reset mode (if RP# is still logic

low after tPLRH, Figure 9C). In both cases, after returning from an aborted operation, the relevant

time tPHQV or tPHWL/tPHEL must be waited before a read or write operation is initiated, as

discussed in the previous paragraph. However, in this case, these delays are referenced to the end

of tPLRH rather than when RP# goes high.

As with any automated device, it is important to assert RP# during system reset. When the sy stem

comes out of reset, processor expects to read from the flash memory. Automated flash memories

provide status information when read during program or block erase operations. If a CPU reset

occurs with no flash memory reset, proper CPU initialization may not occur because the flash

memory may be providing status information instead of array data. Intel® Flash memories allow

proper CPU initial ization follow ing a system reset through the use of the RP# input. In thi s

applicatio n, RP# is con trolled by the same RESET# sign a l that resets the system CPU.

3.1.5 Write

A write takes place when both CE# and WE# are low and OE# is high. Commands are written to

the Command User Interface (CUI) using standard microprocessor write timings to control flash

operations. The CU I d oes not occu py an addressable memory loca tion. T he ad dress and data buses

are latched on the rising edge of the second WE# or CE# pulse, whichever occurs first. Figure 8

illustrates a program and erase operation. The available commands are shown in Table 6, and

Appendix A provides detailed info rmati on on moving between the different modes of operation

using CUI commands.

There are two commands that modify array data: Program (40H) and Erase (20H). Writing either of

these commands to the internal Command User Interface (CUI) initiates a sequence of internally-

timed functions that culminate in the completion of the req ues ted task (unless that operation is

aborted by either RP# being driven to VIL for tPLRH or an appropriate suspend command).

3.2 Modes of Operation

The flash memory has four read modes and two write modes. The read modes are read array, read

identifier, read status and read query (see Appendix B). The write modes are program and block

erase. Three additional modes (erase suspend to program, erase suspend to read and program

suspend to read) are available only during suspended operations. These modes are reached using

the commands summarized in Table 4. A comprehensive chart showing the state transitions is in

Appendix A.

3.2.1 Read A rray

When RP# transitions from VIL (reset) to VIH, the device defaults to read array mode and will

respond to the read control inputs (CE#, add ress inputs, and OE#) without any additional CUI

commands.

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

10 3UHOLPLQDU\

When the device is in read array mode, four control signals control data output:

•WE# must be logic high (VIH)

•CE# must be logic low (VIL)

•OE# must be logic low (VIL)

•RP# must be logic high (VIH)

In addition, the address of the desired location must be applied to the address pins. If the device is

not in read array mode, as would be the case after a program or erase operation, the Read Array

command (FFH) must be written to the CUI before array reads can take place.

NOTE: See Appendix A for mode transition information.

Table 4. Command Codes and Descriptions

Code Device Mode Description

00, 01,

60, 2F,

C0, 98

Invalid/

Reserved Unassigned com mands that should not be used. Intel reserves the right to redefine these

codes for future functions.

FF Read Array Places the device in read array mode, such that array data will be output on the data pins.

40 Program Set-Up

This is a two-cycle command. The first cycle prepares the CUI for a program operation. The

second cycle latches addresses and data information and initiates the WSM to execute the

Program algorithm. The flash outputs status register data when CE# or OE# is toggled. A Read

Array command is required after programming to read array data. See Sec tion 3.2.4.

10 Alternate

Program Set-Up (See 40H/Program Set-Up)

20 Erase Set-Up

Prepares the CUI for the Erase Confirm command. If the next command is not an Erase

Confirm command, then the CUI will (a) set both SR.4 and SR.5 of the status register to a “1,”

(b) place the device into the read stat us register mode, and (c) wait for another command. See

Section 3.2.5.

Erase Confirm

Program / Erase

Resume

If the previous command was an Erase Set-Up command, then the CUI will close the address

and data latches, and begin erasing the block indicated on the address pins. During erase, the

device will only respond to the Read Status Register and Erase Suspend commands. The

device will output status register data when CE# or OE# is toggled.

If a program or erase operation was previously suspended, this command will resume that

operation

B0 Program / Erase

Suspend

Issuing this command will begin to suspend the currently executing program/erase operation.

The status register will indicate when the operation has been successfully suspended by

setting either the program suspend (SR.2) or erase suspend (SR.6) and the WSM status bit

(SR.7) to a “1” (ready). The WSM will continue to idle in t he SUSPEND state, regardless of the

state of all input control pins except RP#, which will immediately shut down the WSM and the

remainder of the chip if it is driven to VIL. See Section 3.2.4.1 and Section 3.2.4.1.

70 Read Status

This command places the device into read status register mode. Reading the device will output

the contents of the status register, regardless of the address presented to the device. The

device automatically enters this mode after a program or erase operation has been initiated.

See Section 3.2.3.

50 Clear Status

The WSM can set the block lock status (SR.1) , VPP status (SR.3), program status (SR.4), and

erase status (SR.5) bits in the status register to “1,” but it cannot clear them to “0.” Issuing this

command clears those bits to “0.”

90 Read Identifier Puts the device into the intelligent identifier read mode, so that reading the device will output

the manufacturer and device codes (A0 = 0 for manufacturer, A0 = 1 for device, all other

address inputs must be 0). See Section Section 3.2.2.

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

3UHOLPLQDU\ 11

3.2.2 Read Ident if ie r

To read the manufacturer and device codes, the device must be in read identifier mode, which can

be reached by writing the Read Identifier command (90H). Once in read identifier mode, A0 = 0

outputs the manufacturer’s identification code and A0 = 1 outputs the device identifier (see

Table 5) No te: A1–A21 = 0. To return to read array mode, write the Read Array command (FFH).

3.2.3 Read Status Register

The device status register indicates when a program or er ase operation is complete and the success

or failure of that operation. To read the status register issue the Read Status Register (70H)

command to the CUI. This causes all subsequent read operations to output data from the status

Read Array (FFH) command.

The status register bits are output on DQ0–DQ7. The upper byte, DQ8–DQ15, outputs 0 0H duri ng a

Read Status Register command.

The contents of the status register are latched on the falling edge of OE# or CE#. This prevents

possible bus errors which might occur if status register contents change while being read. CE# or

OE# must be toggled with each subsequen t status read, or the status register will not indicate

completion of a program or erase operation.

When the WSM is active, SR.7 will indicate the status of the WSM; the remaining bits in the status

Table 7 on page 14).

3.2.3.1 Clearing th e Status Register

The WSM sets status bits 1 through 7 to “1,” and clears bits 2, 6 and 7 to “0,” but cannot clear

status bits 1 or 3 through 5 to “0.” Because bits 1, 3, 4 and 5 indicate various erro r conditions, these

bits can only be cleared through the Clear Status Register (50H) command. By allowing the system

software to control the resetting of these bits, several operations may be performed (such as

cumulatively p rogramming several addr esses or erasing multiple blocks in sequence) before

Table 5. Read Identifier Table

Size Mfr. ID

Device Identifier

-T

(Top Boot) -B

(Bottom Boot)

28F004B3 0089H D4H D5H

28F400B3 8894H 8895H

28F008B3

0089H

D2H D3H

28F800B3 8892H 8893H

28F016B3 D0H D1H

28F160B3

0089H

8890H 8891H

28F320B3 8896H 8897H

28F640B3 8898H 8899H

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

12 3UHOLPLQDU\

reading the status register to determine if an error occurred during that series. Clear the status

command must be issued before data can be read from the memory array.

3.2.4 Program Mode

Programming is executed using a two-write sequence. The Program Setup command (40H) is

written to the CUI followed by a second write which specifies the address and data to be

programmed. The WSM will execute a sequence of internally timed events to program desired bits

of the addressed location, then verify the bits are sufficiently programmed. Programming the

memory results in specific bits within an address location being changed to a “0.” If the user

attempts to program “1”s, the memory cell contents do not change and no error occurs.

The status register indicates programmin g status: while the progr am sequence executes, status bi t 7

is “0.” The status register can be polled by toggling either CE# or OE#. While programming, the

only valid commands are Read Status Register, Program Suspend, and Program Resume.

When programming is complete, the Program Status bits should be checked. If the programming

operation was unsuccessful, bit SR.4 of the status register is set to indicate a program failure. If

SR.3 is set then VPP was not within acceptable limits, and the WSM did not execute the program

command. If SR.1 is set, a program operation was attempted on a locked block and the operation

was aborted.

The status register should be cleared before attempting the next operation. Any CUI instruction can

follow after programming is completed; however, to prevent inadvertent status register reads, be

sure to reset the CUI to read array mode.

3.2.4.1 Suspending and Resuming Program

The Program Susp end halts the in-progres s program operation to read data from anot her location of

memory. Once the programming process star ts, writing the Program Suspend command to the CUI

requests that the WSM suspend the program sequence (at predetermined points in the program

algorithm ). The device continues t o output status regist er data after the Program Su spend command

is written. Pollin g status regist er bits SR.7 and SR.2 will determine when the program operation

has been suspend ed (both will be set to “1”). tWHRH1/tEHRH1 specify the program suspend latency.

A Read Array command can now be written to the CU I to read d a ta from blocks other than that

which is suspended. The only other valid commands while program is suspended, are Read Status

the flash memory, the WSM will continue with the program process and status register bits SR.2

and SR.7 will automatically be cleared. After the Program Resume command is written, the device

automatically outputs status register data when read (see A ppendix E for Program Suspend and

Resume Flowchart). VPP must remain at the same VPP level used for program while in program

suspend mode. RP# must also remain at VIH.

3.2.5 Erase Mode

To erase a block, write the Erase Set-up and Erase Confirm commands to the CUI, along with an

address identifying the block to be erased. This address is latched internally when the Erase

Confirm command is issued. Block erasure results in all bits within the block being set to “1.” Only

one block can be erased at a time. The WSM will execute a sequence of internally-ti med even ts to

program all bits within the block to “0,” erase all bits within the block to “1,” then verify that all

bits within the block are sufficiently erased. While the erase executes, status bit 7 is a “0.”

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

3UHOLPLQDU\ 13

When the status register indicates that erasure is complete, check the erase status bit to verify that

the erase operation was successful. If the erase operation was unsuccessful, SR.5 of the status

the Erase Confirm comm a nd was issued , the WSM will not execute the erase sequence; instead,

SR.5 of the status register is set to indicate an erase error, and SR.3 is set to a “1” to identify that

VPP supply voltage was not within acceptable limits.

After an erase operation, clear the status register (50H) before attempting the next operation. Any

CUI instruction can follow after erasure is completed; however, to prevent inadvertent status

3.2.5.1 Suspending and Resuming Erase

Since an erase operation requ ires on the o rder of se cond s to com plete, an Erase Suspen d co mmand

is provided to allow erase-sequence interruptio n in order to read data from or program data to

another block in memory. Once the erase sequence is started, writing the Erase Suspend command

to the CUI requests that the WSM pause the erase sequence at a predetermined point in the erase

algorithm. The status register will indicate if/when the erase operation has been suspended.

A Read Array/Program command can now be written to the CUI in order to read data from/

program data to blocks other than the one currently suspended. The Program command can

subsequently be suspended to read yet another array location. The only valid commands while

erase is suspended are Erase Resume, Program, Read Array, Read Status Register, or Read

Identifier. During erase suspend mode, the chip can be placed in a pseudo-standby mode by taking

CE# to VIH. This reduces active current consumption.

Erase Resume continues the erase sequence when CE# = VIL. As with the end of a standard erase

operation, the status register must be read and cleared before the next instruction is issued.

NOTES:

PA: Program Address PD: Pro g r am Da ta BA: Block Address

IA: Identifier Address ID: Id entifier Data SRD: Status Register Data

1. Bus operations are defined in Table 3.

2. Following the Intelligent Identifier command, two read operations access manufacturer and device codes.

A 0 = 0 for manufacturer code, A0 = 1 for device code. A1–A21 = 0.

3. Either 40H or 10H command is valid although the standard is 40H.

4. When writing commands to the device, the upper data bus [DQ 8–DQ15] should be either VIL or VIH, to

minimize current draw.

Table 6. Command Bus Definitions (1,4)

First Bus Cycle Second Bus Cycle

Command Notes Oper Addr Data Oper Addr Data

Read Array Write X F FH

Read Identifier 2 Write X 90H Read IA ID

Read S tatus Register Write X 70H Read X SRD

Clear Status Register Write X 50H

Program 3 Write X 40H /

10H Write PA PD

Block Erase/Confirm Write X 20H Write BA D0H

Program/Erase Suspend Write X B0H

Program/Erase Resume Write X D0H

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

14 3UHOLPLQDU\

NOTE: A Command Sequence Error is indicated when both SR.4, SR.5 and SR.7 are set.

3.3 Block Locking

The 3 Volt Advanced Boot Block flash memory architecture features two hardware-lockable

parameter blocks.

3.3.1 WP# = VIL for Block Locking

The lockable blocks are locked when WP# = VIL; any pro gram or erase oper ation to a locked b lock

will result in an error, which will be reflected in the status register. For top configuratio n, the top

two parameter blocks (blocks #133 and #134 for the 64 Mbit, #69 and #70 for the 32 Mbit, blocks

#37 and #3 8 for the 16 Mbi t, b locks #2 1 and #22 for th e 8 Mbi t, b locks # 13 and #14 f or the 4 Mbi t)

are lockable. For the bottom configuration, the bottom two parameter blocks (blocks #0 and #1 for

4 /8 /16 /32/64 Mbit) are lock able. Unlocked blocks can be programmed or erased normally (unless

VPP is below VPPLK).

Table 7. Status Register Bit Definition

WSMS ESS ES PS VPPS PSS BLS R

76543210

NOTES:

SR.7 = WRITE STATE MACHINE STATUS (WSMS)

1 = Ready

0 = Busy

Check Write State Machine bit first to determine word program

or block erase completion, before checking program or erase

status bits.

SR.6 = ERASE -SUSPEND STAT US (ESS)

1 = Erase Suspended

0 = Erase In Progress/Completed

When erase suspend is issued, WSM halts execution and sets

both WSMS and ESS bits to “1.” ESS bit remains set at “1” until

an Erase Resume command is issued.

SR.5 = ERASE STATUS (ES)

1 = Error In Block Erasure

0 = Successful Block Erase

When this bit is set to “1,” WSM has applied the max. number

of erase pulses to the block and is still unable to verify

successful block erasure.

SR.4 = PR O GR AM STATU S (PS)

1 = Error in Word Program

0 = Successful Word Program

When this bit is set to “1,” WSM has attempted but failed to

program a word.

SR.3 = VPP STATUS (VPPS)

1 = VPP Low Detect, Operation Abort

0 = VPP OK

The VPP status bit does not provide continuous indication of

VPP level. The WSM interrogates VPP level only after the

Program or Erase comm and sequences have been entered,

and informs the system if VPP has not been switched on. The

VPP is also checked before the operation is verified by the

WSM. The VPP status bit is not guaranteed to report accurate

feedback between VPPLK max and VPP1 min or between VPP1

max and VPP4 min.

SR.2 = PRO GR AM SUSPEND STATUS (PSS )

1 = Program Suspended

0 = Program in Progress/Completed

When program suspend is issued, WSM halts execution and

sets both WSMS and PSS bits to “1.” PSS bit remains set to “1”

until a Program Resume command is issued.

SR.1 = BLOCK LOCK STATUS

1 = Program/Erase attempted on locked block;

Operation aborted

0 = No operation to locked blocks

If a program or erase operation is attempted to one of the

locked blocks, this bit is set by the WSM. The operation

specified is aborted and the device is returned to read status

mode.

SR.0 = RESERVED FOR FUTURE ENHANCEMENTS (R) This bit is reserved for future use and should be masked out

when polling the status register.

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

3UHOLPLQDU\ 15

3.3.2 WP# = VIH for Block Unlocking

WP# = VIH unlocks all lockable blocks.

These blocks can now be programmed or erased.

Note that R P# do es n ot ov erride WP# lo cki ng as i n prev i ous Bo ot B loc k d evi ces . WP# controls al l

block locking and VPP provides protection against spurious writes. Table 8 defines the write

protection methods.

3.4 VPP Program and Erase Voltages

Intel® 3 Volt Advanced Boot Block products provide in-system programming and erase at 2.7 V.

For customers requiring fast programming in their manufacturing environment, 3 Volt Advanced

Boot Block includes an additional low-cost 12 V programming feature.

The 12 V VPP mode enhances programming performance during the short period of time typically

found in manufacturing processes; however, it is not intended for extended use. 12 V may be

applied to VPP during program and erase operations for a maximum of 1000 cycles on the main

blocks and 2500 cycles on the parameter blocks. VPP may be connected to 12 V for a total of 80

hours maximum.

Warning: Stressing the device beyond these limits may cause permanent damage.

During read operations or idle times, VPP may be tied to a 5 V supply. For program and erase

operations, a 5 V supply is not permitted. The VPP must be supplied with either 2.7 V–3 .6 V or

11.4 V–12.6 V during program and erase operations.

3.4.1 VPP = VIL for Complete Protection

The VPP programming voltage can be held low for complete write protection of all blocks in the

flash device. When VPP is below VPPLK, any program or erase operation will result in a error,

prompting the corresponding status register bit (SR.3) to be set.

3.5 Power Consumption

Intel Flash devices have a tiered approach to power savings that can significantly reduce overall

system power consumption. The Automatic Power Savings (APS) feature reduces power

consumption when the device is selected but idle. If the CE# is deasserted, the flash enters its

standby mode, where current consumption is even lower. The combination of these features can

minimize memory power consumption, and therefore, overall system power consumption.

Table 8. Write Protection Truth Table for the Advanced Boot Block Flash Memory Family

VPP WP# RP# Write Protection Provided

XXV

IL All Blocks Locked

VIL XV

IH All Blocks Locked

≥ VPPLK VIL VIH Lockable Blocks Locked

≥ VPPLK VIH VIH All Blocks Unlocked

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

16 3UHOLPLQDU\

3.5.1 A ctive Power

W ith CE# at a logic-low level and RP# at a logic-high level, the device is in the active mode. Refer

to the DC Characteristic tables for ICC current values. Active power is the largest contributor to

overall system power consumption. Minimizing the active curren t could hav e a prof oun d ef f ect on

system power consumption, especially for battery-operated devices.

3.5.2 Automatic Power Savings (APS)

Automatic Power Savings provides low-power operat ion du ring read mo de. Afte r data i s read fr om

the memory array and the address lines are quiescent, APS circuitry places the device in a mode

where typical current is comparable to ICCS. The flash stays in this static state wit h outputs valid

until a new location is read.

3.5.3 Standby Power

W i t h CE# at a logic -high level (VIH) and device in read mode, the flash memory is in standby

mode, which disables much of the device’ s circuitry and substantially reduces power consumption.

Outputs are placed in a high-impedance state independent of the status of the OE# signal. If CE#

transitions to a logic-high level du ring erase or program operations, the device will co ntinue to

perform the operation and consume corresp onding active po wer until the operation is completed.

System engineers should analyze the breakdown of standby time versus active time and quantify

the respective power consumption in each mode for their specific application. This will provide a

more accurate measure of application-specific power and energy requirements.

3.5.4 Deep Power-Down Mode

The deep power-down mode is activated when RP# = VIL (GND ±0.2 V). D uring read m odes,

RP# going low de-selects the memory and places the outputs in a high impedance state. Recovery

from deep power-down requires a minimum time of tPHQV (see AC Characteristics—Read

Operations, Section 4.5).

During program or erase modes , RP# transitioni ng low will abort the in-p rog res s operation. The

memory content s of the addr ess bein g prog rammed or the block bei ng erased are no l onger valid as

the data integrity has been compromised by the abort. During deep power-down, all internal

circuits are switched to a low power savings mode (RP# transitioning to V IL or turning of f power t o

the device clears the status register).

3.6 Power-Up /Do wn Operation

The device is protected against accidental block erasure or programming during power transitions.

Power supply sequencing is not required, since the device is ind ifferent as to which po wer supply,

VPP or VCC, powers-up first.

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

3UHOLPLQDU\ 17

3.6.1 RP# Connecte d to System Reset

The use of RP# during system reset is important with automated program/erase devices since the

system expects to read from the flash memory when it comes out of reset. If a CPU reset occurs

without a flash memory reset, proper CPU initialization will not occur because the flash memory

may be provi ding status informatio n instead of arr ay data. Inte l recommends connecting RP # to the

system CPU RESET# signal to allow pro per CP U/flash initialization follo wing system reset.

System designers must guard against spurious writes when VCC voltages are above VLKO. Since

both WE# and CE# must be low for a command write, driving either signal to VIH will inhibit

writes to the device. The CUI architecture provides additional protection since alteration of

memory contents can only occur after successful completion of the two-step command sequences.

The device is also disabled until RP# is brought to VIH, regardless of t he s tat e of i ts cont ro l in put s .

By holding the device in reset (RP# connected to system POWERGOOD) during power-up/down,

invalid bus conditions during power-up can be masked, providing yet another level of memory

protection.

3.6.2 VCC, VPP and RP# Tr ansitions

The CUI latches commands as issued by system software and is not altered by VPP or CE#

transitions or WSM actions. Its default state upon power-up, after exit from reset mode or after

VCC transitions above VLKO (Lockout voltage), is read array mode.

After any program or block erase operation is complete (even after VPP transitions down to

VPPLK), the CUI must be reset to read array mode via the Read Array command if access to the

flash memory array is desired.

3.7 Power Supply Decoupling

Flash memory’s power switching characteristics require careful device decoupling. System

designers should consider three supply current issues:

1. Stand by curren t levels (ICCS)

2. Read current levels (ICCR)

3. Transient peaks produced by falling and rising edges of CE#.

Transient current magnitud es depend on the device ou tputs’ capacitive and inductive loading.

Two-line control and prop er decoupling capacito r selection will suppress these transient voltage

peaks. Each flash dev ice sh ou ld hav e a 0 .1 µF ceramic capacitor conn ected b etween each VCC and

GND, and between its VPP and GND. These high-frequency, inherently low-inductance capacitors

should be placed as close as possible to the package leads.

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

18 3UHOLPLQDU\

4.0 Electrical Specifications

4.1 Absolute Maximum Ratings

NOTES:

1. Minimum DC voltage is -0.5 V on input/output pins, with allowable undershoot to -2.0 V for periods <20 ns.

Maximum DC voltage on input/output pins is VCC +0.5 V, with allowable overshoot to VCC +1.5 for periods of

<20 ns

2. Maximum DC voltage on VPP may overshoot to +14.0 V for periods <20 ns.

3. VPP Program voltage is normally 2.7 V–3.6 V. Connection to a 11.4 V–12.6 V supply can be done for a

maximum of 1000 cycles on the main blocks and 2500 cycles on the parameter blocks during program/erase.

VPP may be connected to 12 V for a total of 80 hours maximum. See Section 3.4 for details.

4. Minimum DC voltage is -0.5 V on VCC and VCCQ, with allowable undershoot to -2.0 V for periods <20 ns.

Maximum DC voltage on VCC and VCCQ pins is V CC +0.5 V, with allowable overshoot to VCC +1.5 for periods

of <20 ns.

5. Output shorted for no more than one second. No more than one output shorted at a time.

Warning: Stressing the device beyond the “Absolute Maximum Ratings” may cause permanent damage.

These are stress ratings only. Operation beyond the “Operating Conditions” is not recommended

and extende d exposure beyond the “Operating Cond itions” may affect device reliability.

Parameter Maximum Rating

Extended Operating Temperature

During Read –40 °C to +85 °C

During Block Erase and Program –40 °C to +85 °C

Temperature under Bias –40 °C to +85 °C

Storage Temperature –65 °C to +125 °C

Volt age On Any Pin (except VCC, V CCQ and VPP) with Respect to GND –0.5 V to +3.7 V(1)

VPP Voltage (for Block Erase and Program) with Respect to GND –0.5 V to +13.5 V(1,2,3)

VCC and VCCQ Supply Voltage with Respect to GND –0.2 V to +3.7 V(4)

Output Short Circuit Current 100 mA(5)

NOTICE: This datasheet contains preliminary information on new products in production. Specifications are

subject to change without notice. Verify with your local Intel Sales office that you have the latest datasheet before

finalizing a design.

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

3UHOLPLQDU\ 19

4.2 Operating Conditions

NOTES:

1. VCC1, VCCQ1, and VPP3 must share the same supply when all three are between 2.7 V and 3.6 V.

2. VCCMax is 3.3 V on 0.25µm 32-Mbit devices.

3. During read operations or idle time, 5 V may be applied to VPP indefinitely. VPP must be at valid levels for

program and erase operations

4. Applying VPP = 11.4 V–12.6 V during a program/erase can only be done for a maximum of 1000 cycles on

the main blocks and 2500 cycles on the parameter blocks. VPP may be connected to 12 V for a total of

80 hours maximum. See Section 3.4 for details.

4.3 Capacitance

TA = 25 °C, f = 1 MHz

NOTE: Sampled, not 100% tested.

Symbol Parameter Notes Min Max Units

TAOperating Temperature –40 +85 °C

VCC1

VCC Supply Voltage

1, 2 2.7 3.6

VoltsVCC2 2.7 2.85

VCC3 2.7 3.3

VCCQ1

I/O Supply Voltage

12.73.6

VoltsVCCQ2 1.65 2.5

VCCQ3 1.8 2.5

VPP1

Program and Erase Voltage

12.73.6

Volts

VPP2 2.7 2.85

VPP3 2.7 3.3

VPP4 3, 4 11.4 12.6

Cycling Block Erase Cycling 4 100,000 Cycles

Sym Parameter Notes Typ Max Units Conditions

CIN Input Capacitance 1 6 8 pF VIN = 0 V

COUT Output Capacitance 1 10 12 pF VOUT = 0 V

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

20 3UHOLPLQDU\

4.4 DC Characteristics

Sym Parameter

VCC 2.7 V–3.6 V 2.7 V–2.85 V 2.7 V–3.3 V

Unit Test ConditionsVCCQ 2.7 V–3.6 V 1.65 V–2.5 V 1.8 V–2.5 V

Note Typ Max Typ Max Typ Max

ILI Input Load Current 1,2 ± 1 ± 1 ± 1 µA VCC = VCCMax

VCCQ = VCCQMax

VIN = VCCQ or GND

ILO Output Leakage Current 1,2 ± 10 ± 10 ± 10 µA VCC = VCCMax

VCCQ = VCCQMax

VIN = VCCQ or GND

ICCS

VCC Standby Current for

0.18 Micron Product 1,2 7 15 20 50 150 250 µA VCC = VCCMax

CE# = RP# = VCCQ

or during Program/

Erase Suspend

WP# = VCCQ or GND

VCC Standby Current for

0.25 Micron and

0.4 Micron Product 1,2 18 35 20 50 150 250 µA

ICCD

VCC Power-Down Current

for 0.18 Micron Product 1,2 7 15 7 20 7 20 µA VCC = VCCMax

VCCQ = VCCQMax

VIN = VCCQ or GND

RP# = GND ± 0.2 V

VCC Power-Down Current

for 0.25 Micron and

0.4 Micron Product 1,2 7 25 7 25 7 25 µA

ICCR

VCC Read Current for

0.18 Micron Product 1,2,3 9 18 8 15 9 15 mA VCC = VCCMax

VCCQ = VCCQMax

OE# = VIH , CE# =VIL

f = 5 MHz, IOUT=0 mA

Inputs = VIL or VIH

VCC Read Current for

0.25 and 0.4 Micron

Product 1,2,3 10 18 8 15 9 15 mA

IPPD VPP Deep Power-Down

Current 0.2 5 0.2 5 0.2 5 µA RP# = GND ± 0.2 V

VPP ≤ VCC

IPPR VPP Read Current 1,4 2±15 2 ±15 2 ±15 µA VPP

≤ VCC

50 200 50 200 50 200 µA VPP > VCC

ICCW+

IPPW

VCC + VPP Program

Current for 0.18 Micron

Product 1,2,4 18 55 18 55 18 55 mA VPP =VPP 1, 2, 3

Program in Progress

8 1510301030mA

VPP = VPP4

Program in Progress

VCC + VPP Program

Current for 0.25 Micron

and 0.4 Micron Product 1,2,4 18 55 18 55 18 55 mA VPP =VPP 1, 2, 3

Program in Progress

10 30 10 30 10 30 mA VPP = VPP4

Program in Progress

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

3UHOLPLQDU\ 21

DC Characteristics, Continue d

NOTES:

1. All currents are in RMS unless otherwise noted. Typical values at nominal VCC, TA = +25 °C.

Sym Parameter

VCC 2.7 V–3.6 V 2.7 V–2.85 V 2.7 V–3.3 V

Unit Test ConditionsVCCQ 2.7 V–3.6 V 1.65 V–2.5 V 1.8 V–2.5 V

Note Typ Max Typ Max Typ Max

ICCE

+IPPE

VCC + VPP Erase Current

for 0.18 Micron Product 1,2,4

16 45 21 45 21 45 mA VPP = VPP1, 2, 3

Program in

Progress

16 45 16 45 16 45 mA VPP = VPP4

Program in

Progress

VCC + VPP Erase Current

for 0.25 Micron and 0.4

Micron Product 1,2,4

20 45 21 45 21 45 mA VPP = VPP1, 2, 3

Program in

Progress

16 45 16 45 16 45 mA VPP = VPP4

Program in

Progress

IPPES

IPPWS

VPP Erase Suspend

Current 1,4 50 200 50 200 50 200 µA

VPP = V P P 1, 2, 3, 4

Program or Erase

Suspend in

Progress

Sym Parameter

VCC 2.7 V–3.6 V 2.7 V–2.85 V 2.7 V–3.3 V

Unit Test ConditionsVCCQ 2.7 V–3.6 V 1.65 V–2.5 V 1.8 V–2.5 V

Note Min Max Min Max Min Max

VIL Input Low Voltage –0.4 VCC *

0.22 V –0.4 0.4 –0.4 0.4 V

VIH Input High Voltage 2.0 VCCQ

+0.3V VCCQ

–0.4V VCCQ

+0.3V VCCQ

–0.4V VCCQ

+0.3V V

VOL Output Low Voltage –0.1 0.1 -0.1 0.1 -0.1 0.1 V VCC = VCCMin

VCCQ = VCCQMin

IOL = 100 µA

VOH Output High Voltage VCCQ

–0.1V VCCQ

–0.1V V

VCC = VCCMin

VCCQ = VCCQMin

IOH = –100 µA

VPPLK VPP Lock-Out Voltage 5 1.5 1.5 1.5 V Complete Write

Protection

VPP1

VPP during Program and

Erase Operations

52.73.6 V

VPP2 5 2.7 2.85 V

VPP3 52.73.3V

VPP4 5,6 11.4 12.6 11.4 12.6 11.4 12.6 V

VLKO VCC Prog/Erase

Lock Voltage 1.5 1.5 1.5 V

VLKO2 VCCQ Prog/Erase

Lock Voltage 1.2 1.2 1.2 V

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

22 3UHOLPLQDU\

2. Since each column lists specifications for a different VCC and VCCQ voltage range combination, the test

conditions VCCMax, VCCQMax, VCCMin, and VCCQMin refer to the maximum or minimum VCC or VCCQ

voltage listed at the top of each column. VCCMax is 3.3 V on 0.25µm 32-Mbit devices.

3. Automatic Power Savings (APS) reduces ICCR to approximately standby levels in static operation.

4. Sampled, not 100% tested.

5. Erase and program are inhibited when VPP < VPPLK and not guaranteed outside the valid VPP ranges of

VPP1, V PP2, VPP3 and VPP4. For read operations or during idle time, a 5 V supply may be applied to VPP

indefinitely. However, VPP must be at valid levels for program and erase operations.

6. Applying VPP = 11.4 V–12.6 V during program /erase can only be done for a maximum of 1000 cycles on the

main blocks and 2500 cycles on the parameter blocks. VPP may be connected to 12 V for a total of 80 hours

maximum. See Section 3.4 for details. For read operations or during idle time, a 5 V supply may be applied to

VPP indefinitely. However, VPP must be at valid levels for program and erase operations.

0580_05

NOTE: AC test inputs are driven at VCCQ for a logic “1” and 0.0V for a logic “0.” Input timing begins, and output

timing ends, at VCCQ/2. Input rise and fall times (10%–90%) <10 ns. Worst case speed conditions are

when VCCQ = VCCQMin.

0580_06

NOTE: See table for component values.

NOTE: CL includes jig capacitance.

Figure 5. Input/Output Reference Waveform

TEST POINTS

INPUT OUTPUT

VCCQ

0.0

VCCQ

2VCCQ

Figure 6. Test Configuration

Out

CCQ

Device

under

Test

Test Configuration Component Values for Worst

Case Speed Conditions

Test Configuration CL (pF) R1 (Ω)R2 (Ω)

VCCQ1 Standard Test 50 25 K 25 K

VCCQ2 Standard Test 50 14.5 K 14.5 K

VCCQ3 Standard Test 50 16 K 16 K

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

3UHOLPLQDU\ 23

4.5 AC Characteristics —Read Operations

NOTES:

1. OE# may be delayed up to tELQV–tGLQV after the falling edge of CE# without impact on tELQV.

2. Sampled, but not 100% tested.

See Figure 7, “AC Waveform: Read Operations” on page 26.

See F igure 5, “Input/Output Reference W aveform” on page 22 for timing measurements and maximum allowable

input slew rate.

# Sym Parameter

Density 4/8 Mbit

Unit

Product 90 ns 110 ns

VCC 3.0 V–3.6 V 2.7 V–3.6 V 3.0 V–3.6 V 2.7 V–3.6 V

Min Max Min Max Min Max Min Max

R1 tAVAV Read Cycle Time 80 90 100 110 ns

R2 tAVQV Address to Output Delay 80 90 100 110 ns

R3 tELQV CE# to Output Delay(1) 80 90 100 110 ns

R4 tGLQV OE# to Output Delay (1) 30 30 30 30 ns

R5 tPHQV RP# to Output Delay 600 600 600 600 ns

R6 tELQX CE# to Output in Low Z(2) 00 00 ns

R7 tGLQX OE# to Output in Low Z(2) 00 00 ns

R8 tEHQZ CE# to Output in High Z(2) 25 25 25 25 ns

R9 tGHQZ OE# to Output in High Z(2) 25 25 25 25 ns

R10 tOH Output Hold from Address,

CE#, or OE# Change,

Whichever Occurs First(2) 00 00 ns

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

24 3UHOLPLQDU\

AC Characteristics, Continued

NOTES:

1. OE# may be delayed up to tELQV–tGLQV after the falling edge of CE# without impact on tELQV.

2. Sampled, but not 100% tested.

See Figure 7, “AC Waveform: Read Operations” on page 26.

See Figure 5, “Input/Output Reference Waveform” on page 22 for timing measuremen ts and maximum

allowable input slew rate.

#Sym

Para-

meter

Density 16 Mbit

Unit

Prod u ct 70 ns 80 ns 90 ns 110 ns

VCC 2.7 V–3.6 V 2.7 V–3.6 V 3.0 V–3.6 V 2.7 V–3.6 V 3.0 V–3.6 V 2.7 V–3.6 V

Min Max Min Max Min Max Min Max Min Max Min Max

R1 tAVAV Read Cycle Time 70 80 80 90 100 110 ns

R2 tAVQV Address to Output

Delay 70 80 80 90 100 110 ns

R3 tELQV CE# to Output

Delay(1) 70 80 80 90 100 110 ns

R4 tGLQV OE# to Output

Delay(1) 20 20 30 30 30 30 ns

R5 tPHQV RP# to Output Delay 150 150 600 600 600 600 ns

R6 tELQX CE# to Output in

Low Z(2) 0000 00 ns

R7 tGLQX OE# to Output in

Low Z(2) 0000 00 ns

R8 tEHQZ CE# to Output in

High Z(2) 20 20 25 25 25 25 ns

R9 tGHQZ OE# to Output in

High Z(2) 20 20 25 25 25 25 ns

R10 tOH

Output Hold from

Address, CE#, or

OE# Change,

Whichever Occurs

First(2)

0000 00 ns

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

3UHOLPLQDU\ 25

AC Characteristics, Continue d

NOTES:

1. OE# may be delayed up to tELQV–tGLQV after the falling edge of CE# without impact on tELQV.

2. Sampled, but not 100% tested.

See Figure 7, “AC Waveform: Read Operations” on page 26.

See Figure 5, “Input/Output Reference Waveform” on page 22 for timing measurements and maximum

allowable input slew rate.

#Sym

Para-

meter

Density 32 Mbit

Unit

Product 70 ns 90 ns 100 ns 110 ns

VCC 2.7 V–3.6 V 2.7 V–3.6 V 3.0 V–3.3 V 2.7 V–3.3 V 3.0 V–3.3 V 2.7 V–3.3 V

Min Max Min Max Min Max Min Max Min Max Min Max

R1 tAVAV Read Cycle Time 70 90 90 100 100 110 ns

R2 tAVQV Address to Output

Delay 70 90 90 100 100 110 ns

R3 tELQV CE# to Output

Delay(1) 70 90 90 100 100 110 ns

R4 tGLQV OE# to Output

Delay(1) 20 20 30 30 30 30 ns

R5 tPHQV RP# to Output

Delay 150 150 600 600 600 600 ns

R6 tELQX CE# to Output in

Low Z(2) 0000 00 ns

R7 tGLQX OE# to Output in

Low Z(2) 0000 00 ns

R8 tEHQZ CE# to Output in

High Z(2) 20 20 25 25 25 25 ns

R9 tGHQZ OE# to Output in

High Z(2) 20 20 25 25 25 25 ns

R10 tOH

Output Hold from

Address, CE#, or

OE# Change,

Whichever Occurs

First(2)

0000 00 ns

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

26 3UHOLPLQDU\

AC Characteristics, Continued

NOTES:

1. OE# may be delayed up to tELQV–tGLQV after the falling edge of CE# without impact on tELQV.

2. Sampled, but not 100% tested.

See Figure 7 for the AC waveform for read operations.

See Figure 5, “Input/Output Reference Waveform” on page 22 for timing measurements and maximum

allowable input slew rate.

# Sym Parameter

Density 64 Mbit

Unit

Product 90 ns 100 ns

VCC 2.7 V–3.6 V 2.7 V–3.6 V

Note Min Max Min Max

R1 tAVAV Read Cycle Time 90 100 ns

R2 tAVQV Address to Output Delay 90 100 ns

R3 tELQV CE# to Output Delay 1 90 100 ns

R4 tGLQV OE# to Output Delay 1 20 20 ns

R5 tPHQV RP# to Output Delay 150 150 ns

R6 tELQX CE# to Output in Low Z 2 0 0 ns

R7 tGLQX OE# to Output in Low Z 2 0 0 ns

R8 tEHQZ CE# to Output in High Z 2 20 20 ns

R9 tGHQZ OE# to Output in High Z 2 20 20 ns

R10 tOH Output Hold from Address, CE#, or

OE# Change, Whichever Occurs First 20 0 ns

Figure 7. AC Waveform: Read Operations

High Z

Valid Output

Address Stable

Data Valid

Device

Address Selection

Standby

ADDRESSES (A)

CE# (E)

OE# (G)

WE# (W)

DATA (D/Q)

RP# (P)

High Z

R10

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

3UHOLPLQDU\ 27

4.6 AC Characteristics —Write Operations

NOTES:

1. Refer to command definition table (Table 6) for valid AIN or DIN.

2. Write pulse widt h (tWP) is defined from CE# or WE# going low (whichever goes low last) to CE# or WE# going

high (whichever goes high first). Hence, tWP = tWLWH = tELEH = tWLEH = tELWH. Similarly, Write pulse width

high (tWPH) is defined from CE# or WE# going high (whichever goes high first) to CE# or WE# going low

(whichever goes low first). Hence, tWPH = tWHWL = tEHEL = tWHEL = tEHWL.

3. Sampled, but not 100% tested.

Read timing characteristics during program suspend and erase suspend are the same as during read-only

operations.

See Figure 5 for timing measurements and maximum allowable input slew rate.

See Figure 8, “AC Wav eform: Program and Erase Operations” on page 32.

# Sym Parameter

Density 4/8 Mbit

Unit

Product 90 ns 11 0 ns

VCC 3.0 V –

3.6 V 2.7 V –

3.6 V 3.0 V –

3.6 V 2.7 V –

3.6 V

Note Min Min Min Min

W1 tPHWL /

tPHEL RP# High Recovery to WE# (CE#) Going Low 600 600 600 600 ns

W2 tELWL /

tWLEL CE# (WE#) Setup to WE# (CE#) Going Low 0000ns

W3 tELEH /

tWLWH WE# (CE#) Pulse Width 1 70 70 70 70 ns

W4 tDVWH /

tDVEH Data Setup to WE# (CE#) Going High 2 50 50 60 60 ns

W5 tAVWH /

tAVEH Address Setup to WE# (CE#) Going High 2 70 70 70 70 ns

W6 tWHEH /

tEHWH CE# (WE#) Hold Ti me from WE# (CE#) High 0000ns

W7 tWHDX /

tEHDX Data Hold Time from WE# (CE#) High 2 0000ns

W8 tWHAX /

tEHAX Address Hold Time from WE# (CE#) High 2 0000ns

W9 tWHWL /

tEHEL WE# (CE#) Pulse Width High 1 30 30 30 30 ns

W10 tVPWH /

tVPEH VPP Setup to WE# (CE#) Going High 3 200 200 200 200 ns

W11 tQVVL VPP Hold from Valid SRD 3 0000ns

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

28 3UHOLPLQDU\

AC Characteristics—Write Operations, continued

NOTES:

1. Refer to command definition table (Table 6) for valid AIN or DIN.

2. Write pulse wid th (tWP) is defined from CE# or WE# going low (whichever goes low last) to CE# or WE# going

high (whichever goes high first). Hence, tWP = tWLWH = tELEH = tWLEH = tELWH. Similarly, Write pulse width

high (tWPH) is defined from CE# or WE# going high (whichever goes high first) to CE# or WE# going low

(whichever goes low first). Hence, tWPH = tWHWL = tEHEL = tWHEL = tEHWL.

3. Sampled, but not 100% tested.

Read timing characteristics during program suspend and erase suspend are the same as during read-only

operations.

See Figure 5 for timing measurements and maximum allowable input slew rate.

See Figure 8, “AC Waveform: Program and Erase Operations” on page 32.

# Sym Parameter

Density 16 Mbit

Unit

Product 70 ns 80 ns 90 ns 110 ns

VCC 2.7 V –

3.6 V 2.7 V –

3.6 V 3.0 V –

3.6 V 2.7 V –

3.6 V 3.0 V –

3.6 V 2.7 V –

3.6 V

Note Min Min Min Min Min Min

W1 tPHWL /

tPHEL RP# High Recovery to WE# (CE#)

Going Low 150 150 600 600 600 600 ns

W2 tELWL /

tWLEL CE# (WE#) Setup to WE# (CE# ) Going

Low 000000ns

W3 tELEH /

tWLWH WE# (CE#) Pulse Width 1 45 50 70 70 70 70 ns

W4 tDVWH /

tDVEH Data Setup to WE# (CE#) Going High 2 40 40 50 50 60 60 ns

W5 tAVWH /

tAVEH Address Setup to WE# (CE#) Going

High 2505070707070ns

W6 tWHEH /

tEHWH CE# (WE#) Hold Time from WE#

(CE#) High 000000ns

W7 tWHDX /

tEHDX Data Hold Time from WE# (CE#) High 2 0 0 0 0 0 0 ns

W8 tWHAX /

tEHAX Address Hold Time from WE# (CE#)

High 2000000ns

W9 tWHWL /

tEHEL WE# (CE#) Pulse Width High 1 25 30 30 30 30 30 ns

W10 tVPWH /

tVPEH VPP Setup to WE# (CE#) Going High 3 200 200 200 200 200 200 ns

W11 tQVVL VPP Hold from Va lid SRD 3 0 0 0 0 0 0 ns

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

3UHOLPLQDU\ 29

AC Characteristics—Write Operations, continued

NOTES:

1. Refer to command definition table (Table 6) for valid AIN or DIN.

2. Write pulse widt h (tWP) is defined from CE# or WE# going low (whichever goes low last) to CE# or WE# going

high (whichever goes high first). Hence, tWP = tWLWH = tELEH = tWLEH = tELWH. Similarly, Write pulse width

high (tWPH) is defined from CE# or WE# going high (whichever goes high first) to CE# or WE# going low

(whichever goes low first). Hence, tWPH = tWHWL = tEHEL = tWHEL = tEHWL.

3. Sampled, but not 100% tested.

Read timing characteristics during program suspend and erase suspend are the same as during read-only

operations.

See Figure 5 for timing measurements and maximum allowable input slew rate.

See Figure 8, “AC Wav eform: Program and Erase Operations” on page 32.

# Sym Parameter

Density 32 Mbit

Unit

Product 70 ns 90 ns 90 ns 110 ns

VCC 2.7 V –

3.6 V 2.7 V –

3.6 V 3.0 V –

3.3 V 2.7 V –

3.3 V 3.0 V –

3.3 V 2.7 V –

3.3 V

Note Min Min Min Min Min Min

W1 tPHWL /

tPHEL RP# High Recovery to WE# (CE#)

Going Low 150 150 600 600 600 600 ns

W2 tELWL /

tWLEL CE# (WE#) Setup to WE# (CE#) Going

Low 000000ns

W3 tELEH /

tWLWH WE# (CE#) Pulse Width 1 45 60 70 70 70 70 ns

W4 tDVWH /

tDVEH Data Setup to WE# (CE#) Going High 2 40 40 50 50 60 60 ns

W5 tAVWH /

tAVEH Address Setup to WE# (CE#) Going

High 2506070707070ns

W6 tWHEH /

tEHWH CE# (WE#) Hold T ime from WE#

(CE#) High 000000ns

W7 tWHDX /

tEHDX Data Hold Time from WE# (CE#) High 2 0 0 0 0 0 0 ns

W8 tWHAX /

tEHAX Ad dress Hold Time from WE# (CE#)

High 2000000ns

W9 tWHW L /

tEHEL WE# (CE# ) Pulse Width High 1 25 30 30 30 30 30 ns

W10 tVPWH /

tVPEH VPP Setup to WE# (CE#) Going High 3 200 200 200 200 200 200 ns

W11 tQVVL VPP Hold from Valid SRD 3 0 0 0 0 0 0 ns

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

30 3UHOLPLQDU\

AC Characteristics—Write Operations, continued

NOTES:

1. Refer to command definition table (Table 6) for valid AIN or DIN.

2. Write pulse wid th (tWP) is defined from CE# or WE# going low (whichever goes low last) to CE# or WE# going

high (whichever goes high first). Hence, tWP = tWLWH = tELEH = tWLEH = tELWH. Similarly, Write pulse width

high (tWPH) is defined from CE# or WE# going high (whichever goes high first) to CE# or WE# going low

(whichever goes low first). Hence, tWPH = tWHWL = tEHEL = tWHEL = tEHWL.

3. Sampled, but not 100% tested.

Read timing characteristics during program suspend and erase suspend are the same as during read-only

operations.

See Figure 5 for timing measurements and maximum allowable input slew rate.

See Figure 8, “AC Waveform: Program and Erase Operations” on page 32.

# Sym Parameter

Density 64 Mbit

Unit

Product 90 ns 100 ns

VCC 2.7 V –

3.6 V 2.7 V –

3.6 V

Note Min Min

W1 tPHWL /

tPHEL RP# High Recovery to WE# (CE#) Going Low 150 150 ns

W2 tELWL /

tWLEL CE# (WE#) Setup to WE# (CE#) Going Low 0 0 ns

W3 tELEH /

tWLWH WE# (CE#) Pulse Width 1 60 70 ns

W4 tDVWH /

tDVEH Data Setup to WE# (CE#) Going High 2 40 40 ns

W5 tAVWH /

tAVEH Address Setup to WE# (CE#) Going High 2 60 60 ns

W6 tWHEH /

tEHWH CE# (WE# ) Hold Time from WE# (CE#) High 0 0 ns

W7 tWHDX /

tEHDX Data Hold Time from W E# (CE#) High 2 0 0 ns

W8 tWHAX /

tEHAX Address Hold Time from WE# (CE#) High 2 0 0 ns

W9 tWHWL /

tEHEL WE# (CE#) Pulse Width High 1 30 30 ns

W10 tVPWH /

tVPEH VPP Setup to WE# (CE#) Going High 3 200 200 ns

W11 tQVVL VPP Hold from Valid SRD 3 0 0 ns

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

3UHOLPLQDU\ 31

4.7 Program and Erase Timings

NOTES:

1. Ty pical values measured at nominal voltages and TA = +25 °C.

2. Excludes external system -level overhead.

3. Sampled, not 100% tested.

4. x8 not available on 0.18 µm offerings

Symbol Parameter VPP 2.7 V–3.6 V 11.4 V–12.6 V Units

Notes Typ(1) Max Typ(1) Max

tBWPB

8-KB Paramet er Block

Program Time (Byte) 2, 3 0.16 0.48 0.08 0.24 s

4-KW Parameter Block

Program Time (Word) 2, 3 0.10 0.30 0.03 0.12 s

tBWMB

64-KB Main Block

Program Time (Byte) 2, 3, 4 1.2 3.7 0.6 1.7 s

32-KW Main Block

Program Time(Word) 2, 3 0.8 2.4 0.24 1 s

tWHQV1 / tEHQV1

Byte Program Time 2, 3, 4 17 165 8 185 µs

Word Program Time for

0.18 Micron Product 2,3 12 200 8 185 µs

Word Program Time for 0.25

Micron and 0.4 Micron Products 2, 3 22 200 8 185 µs

tWHQV2 / tEHQV2

8-KB Paramet er Block

Erase Time (By t e) 2, 3, 4 1 4 0.8 4 s

4-KW Parameter Block

Erase Time (Word) 2, 30.540.44s

tWHQV3 / tEHQV3

64-KB Main Block

Erase Time (By t e) 2, 3, 4 1 5 1 5 s

32-KW Main Block

Erase Time (Word) 2, 3 1 5 0.6 5 s

tWHRH1 / t EHRH1 Program Suspend Latency 5 10 5 10 µs

tWHRH2 / t EHRH2 Erase Suspend Latency 5 20 5 20 µs

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

32 3UHOLPLQDU\

0580_08

NOTES:

1. CE# must be toggled low when reading Status Register Data. WE# must be inactive (high) when reading

Status Register Data.

A. VCC Power-Up and Standby.

B. Write Program or Erase Setup Command.

C. Write Valid Address and Data (for Program) or Erase Confirm Command.

D. Automated Program or Erase Delay.

E. Read Status Register Data (SRD): reflects completed program/erase operation.

F.Write Read Array Command.

Figure 8. AC Waveform: Program and Erase Operations

ADDRESSES [A]

CE#(WE#) [E(W)]

OE# [ G]

WE#(CE#) [W(E)]

DATA [D/Q]

RP# [P]

AIN

Valid

SRD

High Z

V [V]

PPH

PPLK

VPPH

WP# IL

AB C D E F

W10 W11

(Note 1)

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

3UHOLPLQDU\ 33

5.0 Reset Operations

0580_09

NOTES:

1. If tPLPH is <100 ns the device may still RESET but this is not guaranteed

2. .Sampled, but not 100% tested.

3. If RP# is asserted while a block erase or word program operation is not executing, the reset will complete

within 100 ns.

Figure 9. AC Waveform: Deep Power-Down/Reset Operation

RP# (P)

PLPH

RP# (P)

PLPH

(A) Reset during Read Mode

Abort

Complete PHQV

tPHWL

tPHEL

PHQV

tPHWL

tPHEL

(B) Reset during Program or Block Erase, <

PLPH

tPLR

PLRH

RP# (P)

PLPH

Abort

Complete PHQV

tPHWL

tPHEL

PLRH

Deep

Power-

Down

PLPH

tPLRH

Reset Specifications

Symbol Parameter Notes VCC = 2.7 V–3.6 V Unit

Min Max

tPLPH RP# Low to Reset during Read

(If RP# is tied to VCC, this specification is not applicable) 1,2 100 ns

tPLRH RP# Low to Reset during Block Erase or Program 2,3 22 µs

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

34 3UHOLPLQDU\

6.0 Ordering Information

Package

TE = 40-Lead/48-Lead TSOP

GT = 48-Ball µBGA* CSP

GE = VF BGA CSP

Product line designator

for all In te l

Flash products

Access Speed (ns)

(70, 80, 90, 100, 110)

Product Family

B3 = 3 Volt Advanced Boot Block

= 2.7 V - 3.6 V

11.4 V - 12.6 V

Device Density

640 = x16 (64 Mbit)

320 = x16 (32 Mbit)

160 = x16 (16 Mbit)

800 = x16 (8 Mbit)

400 = x16 (4 Mbit)

016 = x8 (16 Mbit)

008 = x8 (8 Mbit)

004 = x8 (4 Mbit)

T =

Top Blocking

B =

Bottom Blocking

Lithography

Not Present = 0.4 µm

A = 0.25 µm

C = 0.18 µm

T E 2 8 F 3 2 0 B 3 T C 7 0

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

3UHOLPLQDU\ 35

NOTES:

1. The 48-ball µBGA package top side mark reads F160B3 [or F800B3]. This mark is identical for both x8 and

x16 products. All product shipping boxes or trays provide the correct information regarding bus architecture.

However, once the devices are removed from the shipping media, it may be difficult to dif ferentiate based on

the top side mark. The device identifier (accessible through the Device ID command: see Section 3.2.2 for

further details) enables x8 and x16 µB GA package product differentiation.

2. The second line of the 48-ball µBGA package top side mark specifies assembly codes. For samples only, the

first character signifies either “E” for engineering samples or “S” for silicon daisy chain samples. All other

assembly codes without an “E” or “S” as the first character are production units.

3. Product can be ordered in either 0.25 µm or 0.4 µm material. The “A” before the access speed specifies

0.25 µm material. For new designs, Intel recommends using 0.25 µm Advanced Boot Block devices.

Ordering Information Valid Combinations

40-Lead TSOP 48-Ball µBGA* CSP(1,2) 48-Lead TSOP 48-Ball µBGA CSP(1,2) 48-Ball VF BGA

Ext. Temp.

64 Mbit

TE28F640B3TC90 GT28F640B3TC90

TE28F640B3BC90 GT28F640B3BC90

TE28F640B3TC100 GT28F640B3TC100

TE28F640B3BC100 GT28F640B3BC100

Ext. Temp.

32 Mbit

TE28F320B3TC70 GE28F320B3TC70

TE28F320B3BC70 GE28F320B3BC70

TE28F320B3TC90 GE28F320B3TC90

TE28F320B3BC90 GE28F320B3BC90

TE28F320B3TA100 GT28F320B3TA100

TE28F320B3BA100 GT28F320B3BA100

TE28F320B3TA110 GT28F320B3TA110

TE28F320B3BA110 GT28F320B3BA110

Ext. Temp.

16 Mbit

TE28F160B3TC70 GE28F160B3TC70

TE28F160B3BC70 GE28F160B3BC70

TE28F160B3TC80 GE28F160B3TC80

TE28F160B3BC80 GE28F160B3BC80

TE28F016B3TA90(3) GT28F016B3TA90(3) TE28F160B3TA90(3) GT28F160B3TA90(3)

TE28F016B3BA90(3) GT28F016B3BA90(3) TE28F160B3BA90(3) GT28F160B3BA90(3)

TE28F016B3TA110(3) GT28F016B3TA110(3) TE28F160B3TA110(3) GT28F160B3TA110(3)

TE28F016B3BA110(3) GT28F016B3BA110(3) TE28F160B3BA110(3) GT28F160B3BA110(3)

Ext. Temp.

8 Mbit

TE28F008B3TA90(3) GT28F008B3T90 TE28F800B3TA90(3) GT28F800B3T90 GE28F800B3TA90

TE28F008B3BA90(3) GT28F008B3B90 TE28F800B3BA90(3) GT28F800B3B90 GE28F800B3BA90

TE28F008B3TA110(3) GT28F008B3T110 TE28F800B3TA110(3) GT28F800B3T110 GE28F008B3TA90

TE28F008B3BA110(3) GT28F008B3B110 TE28F800B3BA110(3) GT28F800B3B110 GE28F008B3BA90

Ext. Temp

4 Mbit

TE28F004B3T90 TE28F400B3T90

TE28F004B3B90 TE28F400B3B90

TE28F004B3T110 TE28F400B3T110

TE28F004B3B110 TE28F400B3B110

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

36 3UHOLPLQDU\

7.0 Additional Information

NOTES:

1. Please call the Intel Literature Center at (800) 548-4725 to request Intel documentation. International

customers should contact their local Intel or distribution sales office.

2. Visit Intel’s World Wide Web home page at http://www.Intel.com or http://developer.intel.com for technical

documentation and tools.

3. For the most current information on Intel Advanced and Advanced+ Boot Block Flash memory, visit our

microsite at http://developer.intel.com/design/flash/abblock.

Order Number Document/Tool

297948

3 Volt Advanced Boot Block Flash Memory Family Specification Update

292199

AP-641 Achieving Low Power with the 3 Volt Advanced Boot Block Flash Memory

292200

AP-642 Designing for Upgrade to the 3 Volt Advanced Boot Block Flash Memory

Note 2

3 Volt Advanced Boot Block

Algorithms (‘C’ and assembly)

http://developer.intel.com/design/flash/swtools

Contact your Intel Representative

Intel® Flash Data Integrator (IFDI) Software Developer ’s Kit

297874

IFDI Interactive: Play with Intel® Flash Data Integrator on Your PC

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

3UHOLPLQDU\ 37

Appendix A Write State Machine Current/Next States

Command Input (and Next State)

Current Stat e SR.7 Data

When

Read

Array

(FFH)

Program

Setup (10/

40H)

Erase

Setup

(20H)

Erase

Confirm

(D0H)

Prog/Ers

Suspend

(B0H)

Prog/Er s

Resume

(D0H)

Read

Status

(70H)

Clear

Status

(50H)

Read

Identifier.

(90H)

Read Array “1” Array Read

Array Program

Setup Erase

Setup Read Arra y Read

Status Read

Array Read

Identifier

Read Status “1” Status Read

Array Program

Setup Erase

Setup Read Arra y Read

Status Read

Array Read

Identifier

Read

Identifier “1” Identifier Read

Array Program

Setup Erase

Setup Read Arra y Read

Status Read

Array Read

Identifier

Prog. Setup “1” Status Program (Command Input = Data to be Programmed)

Program

(continue) “0” Status Program (continue) Prog. Susp.

to Rd.

Status Program (continue)

Progra m

Suspend to

Read Status “1” Status Prog.

Sus. to

Read

Array

Program Suspend

to Read Arra y Program

(continue) Program

Susp. to

Read Array Program

(continue)

Prog.

Susp. to

Read

Status

Prog.

Sus. to

Read

Array

Prog.

Susp. to

Read

Identifier

Progra m

Suspend to

Read Array “1” Array Prog.

Susp. to

Read

Array

Program Suspend

to Read Arra y Program

(continue) Program

Susp. to

Read Array Program

(continue)

Prog.

Susp. to

Read

Status

Prog.

Sus. to

Read

Array

Prog.

Susp. to

Read

Identifier

Prog. Susp. to

Read

Identifier “1” Identifier Prog.

Susp. to

Read

Array

Program Suspend

to Read Array Program

(continue) Program

Susp. to

Read Array Program

(continue)

Prog.

Susp. to

Read

Status

Prog.

Sus. to

Read

Array

Prog.

Susp. to

Read

Identifier

Program

(complete) “1” Status Read

Array Program

Setup Erase

Setup Read Arra y Read

Status Read

Array Read

Identifier

Erase Setup “1” Status Erase Command Error Erase

(continue) Erase

Cmd. Error Erase

(continue) Erase Command Error

Eras e Cmd.

Error “1” Status Read

Array Program

Setup Erase

Setup Read Arra y Read

Status Read

Array Read

Identifier

Erase

(continue) “0” Status Erase (co ntinu e) Erase Sus.

to Read

Status Erase (continue)

Erase

Suspend to

Status “1” Status Erase

Susp. to

Read

Array

Program

Setup

Erase

Susp. to

Read

Array Erase Erase

Susp. to

Read Array Erase Erase

Susp. to

Read

Status

Erase

Susp. to

Read

Array

Ers. Susp.

to Read

Identifier

Erase Susp.

to Read

Array “1” Array Erase

Susp. to

Read

Array

Program

Setup

Erase

Susp. to

Read

Array Erase Erase

Susp. to

Read Array Erase Erase

Susp. to

Read

Status

Erase

Susp. to

Read

Array

Ers. Susp.

to Read

Identifier

Erase Susp.

to Read

Identifier “1” Identifier Erase

Susp. to

Read

Array

Program

Setup

Erase

Susp. to

Read

Array Erase Erase

Susp. to

Read Array Erase Erase

Susp. to

Read

Status

Erase

Susp. to

Read

Array

Ers. Susp.

to Read

Identifier

Erase

(complete) “1” Status Read

Array Program

Setup Erase

Setup Read Arra y Read

Status Read

Array Read

Identifier

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

38 3UHOLPLQDU\

Appendix B Architecture Block Diagram

0580-C1

Output

Multiplexer

4-KWord

Parameter Block

32-KWord

Main Block

32-KWord

Main Block

4-KWord

Parameter Block

Y-Gating/Sensing Write State

Machine Program/Erase

Voltage Switch

Data

Comparator

Status

Identifier

Data

I/O Logic

Address

Latch

Address

Counter

X-Decoder

Y-Decoder

Power

Reduction

Control

Input Buffer

Output Buffer

GND

CE#

WE#

OE#

RP#

Command

User

Interface

Input Buffer

-A

-DQ

CCQ

WP#

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

3UHOLPLQDU\ 39

Appendix C Word-Wide Memory Map Diagrams

16-Mbit and 32-Mbit Word-Wide Memory Addressing

Top Boot Bottom Boot

Size

(KW) 16 Mbit 32 Mbit Size

(KW) 8 Mbit 16 Mbit 32 Mbit

4FF000-FFFFF 1FF000-1FFFFF 32 1F8000-1FFFFF

4FE000-FEFFF 1FE000-1FEFFF 32 1F0000-1F7FFF

4FD000-FDFFF 1FD000-1FDFFF 32 1E8000-1EFFFF

4FC000-FCFFF 1FC000-1FCFFF 32 1E0000-1E7FFF

4FB000-FBFFF 1FB000-1FBFFF 32 1D8000-1DFFFF

4FA000-FAFFF 1FA000-1FAFFF 32 1D0000-1D7FFF

4F9000-F9FFF 1F9000-1F9FFF 32 1C8000-1CFFFF

4F8000-F8FFF 1F8000-1F8FFF 32 1C0000-1C7FFF

32 F0000-F7FFF 1F0000-1F7FFF 32 1B8000-1BFFFF

32 E8000-EFFFF 1E8000-1EFFFF 32 1B0000-1B7FFF

32 E0000-E7FFF 1E0000-1E7FFF 32 1A8000-1AFFFF

32 D8000-DFFFF 1D8000-1DFFFF 32 1A0000-1A7FFF

32 D0000-D7FFF 1D0000-1D7FFF 32 198000-19FFFF

32 C8000-CFFFF 1C8000-1CFFFF 32 190000-197FFF

32 C0000-C7FFF 1C0000-1C7FFF 32 188000-18FFFF

32 B8000-BFFFF 1B8000-1BFFFF 32 180000-187FFF

32 B0000-B7FFF 1B0000-1B7FFF 32 178000-17FFFF

32 A8000-AFFFF 1A8000-1AFFFF 32 170000-177FFF

32 A0000-A7FFF 1A0000-1A7FFF 32 168000-16FFFF

32 98000-9FFFF 198000-19FFFF 32 160000-167FFF

32 90000-97FFF 190000-197FFF 32 158000-15FFFF

32 88000-8FFFF 188000-18FFFF 32 150000-157FFF

32 80000-87FFF 180000-187FFF 32 148000-14FFFF

32 78000-7FFFF 178000-17FFFF 32 140000-147FFF

32 70000-77FFF 170000-177FFF 32 138000-13FFFF

32 68000-6FFFF 168000-16FFFF 32 130000-137FFF

32 60000-67FFF 160000-167FFF 32 128000-12FFFF

32 58000-5FFFF 158000-15FFFF 32 120000-127FFF

32 50000-57FFF 150000-157FFF 32 118000-11FFFF

32 48000-4FFFF 148000-14FFFF 32 110000-117FFF

32 40000-47FFF 140000-147FFF 32 108000-10FFFF

32 38000-3FFFF 138000-13FFFF 32 100000-107FFF

32 30000-37FFF 130000-137FFF 32 F8000-FFFFF 0F8000-0FFFFF

32 28000-2FFFF 128000-12FFFF 32 F0000-F7FFF 0F0000-0F7FFF

32 20000-27FFF 120000-127FFF 32 E8000-EFFFF 0E8000-0EFFFF

32 18000-1FFFF 118000-11FFFF 32 E0000-E7FFF 0E0000-0E7FFF

32 10000-17FFF 110000-117FFF 32 D8000-DFFFF 0D8000-0DFFFF

32 08000-0FFFF 108000-10FFFF 32 D0000-D7FFF 0D0000-0D7FFF

32 00000-07FFF 100000-107FFF 32 C8000-CFFFF 0C8000-0CFFFF

This column continues on next page This column continues on next page

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

40 3UHOLPLQDU\

16-Mbit and 32-Mbit Word-Wide Memory Addressing (Continued)

Top Boot Botto m Boot

Size

(KW) 16 Mbit 32 Mbit Size

(KW) 16 Mbit 32 Mbit

32 0F8000-0FFFFF 32 C0000-C7FFF 0C0000-0C7FFF

32 0F0000-0F7FFF 32 B8000-BFFFF 0B8000-0BFFFF

32 0E8000-0EFFFF 32 B0000-B7FFF 0B0000-0B7FFF

32 0E0000-0E7FFF 32 A8000-AFFFF 0A8000-0AFFFF

32 0D8000-0DFFFF 32 A0000-A7FFF 0A0000-0A7FFF

32 0D0000-0D7FFF 32 98000-9FFFF 098000-09FFFF

32 0C8000-0CFFFF 32 90000-97FFF 090000-097FFF

32 0C0000-0C7FFF 32 88000-8FFFF 088000-08FFFF

32 0B8000-0BFFFF 32 80000-87FFF 080000-087FFF

32 0B0000-0B7FFF 32 78000-7FFFF 78000-7FFFF

32 0A8000-0AFFFF 32 70000-77FFF 70000-77FFF

32 0A0000-0A7FFF 32 68000-6FFFF 68000-6FFFF

32 098000-09FFFF 32 60000-67FFF 60000-67FFF

32 090000-097FFF 32 58000-5FFFF 58000-5FFFF

32 088000-08FFFF 32 50000-57FFF 50000-57FFF

32 080000-087FFF 32 48000-4FFFF 48000-4FFFF

32 078000-07FFFF 32 40000-47FFF 40000-47FFF

32 070000-077FFF 32 38000-3FFFF 38000-3FFFF

32 068000-06FFFF 32 30000-37FFF 30000-37FFF

32 060000-067FFF 32 28000-2FFFF 28000-2FFFF

32 058000-05FFFF 32 20000-27FFF 20000-27FFF

32 050000-057FFF 32 18000-1FFFF 18000-1FFFF

32 048000-04FFFF 32 10000-17FFF 10000-17FFF

32 040000-047FFF 32 08000-0FFFF 08000-0FFFF

32 038000-03FFFF 4 07000-07FFF 07000-07FFF

32 030000-037FFF 4 06000-06FFF 06000-06FFF

32 028000-02FFFF 4 05000-05FFF 05000-05FFF

32 020000-027FFF 4 04000-04FFF 04000-04FFF

32 018000-01FFFF 4 03000-03FFF 03000-03FFF

32 010000-017FFF 4 02000-02FFF 02000-02FFF

32 008000-00FFFF 4 01000-01FFF 01000-01FFF

32 000000-007FFF 4 00000-00FFF 00000-00FFF

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

3UHOLPLQDU\ 41

4-Mbit and 8-Mbit Word-Wide Memory Addressing

Top Boot Bottom Boot

Size

(KW) 4 Mbit Size

(KW) 4 Mbit 8 Mbit

3F000-3FFFF 7F000-7FFFF 32 78000-7FFFF

3E000-3EFFF 7E000-7EFFF 32 70000-77FFF

3D000-3DFFF 7D000-7DFFF 32 68000-6FFFF

3C000-3CFFF 7C000-7CFFF 32 60000-67FFF

3B000-3BFFF 7B000-7BFFF 32 58000-5FFFF

3A000-3AFFF 7A000-7AFFF 32 50000-57FFF

39000-39FFF 79000-79FFF 32 48000-4FFFF

38000-38FFF 78000-78FFF 32 40000-47FFF

4 30000-37FFF 70000-77FFF 32 38000-3FFFF 38000-3FFFF

4 28000-2FFFF 68000-6FFFF 32 30000-37FFF 30000-37FFF

4 20000-27FFF 60000-67FFF 32 28000-2FFFF 28000-2FFFF

4 18000-1FFFF 58000-5FFFF 32 20000-27FFF 20000-27FFF

4 10000-17FFF 50000-57FFF 32 18000-1FFFF 18000-1FFFF

4 08000-0FFFF 48000-4FFFF 32 10000-17FFF 10000-17FFF

4 00000-07FFF 40000-47FFF 32 08000-0FFFF 08000-0FFFF

438000-3FFFF 4 07000-07FFF 07000-07FFF

32 30000-37FFF 4 06000-06FFF 06000-06FFF

32 28000-2FFFF 4 05000-05FFF 05000-05FFF

32 20000-27FFF 4 04000-04FFF 04000-04FFF

32 18000-1FFFF 4 03000-03FFF 03000-03FFF

32 10000-17FFF 4 02000-02FFF 02000-02FFF

32 08000-0FFFF 4 01000-01FFF 01000-01FFF

32 00000-07FFF 4 00000-00FFF 00000-00FFF

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

42 3UHOLPLQDU\

16-Mbit, 32-Mbit, and 64-Mbit Word-Wide Memory Addressing

Top Boot Bottom Boot

Size

(KW) 16 Mbit 32 Mbit 64 Mbit Size

(KW) 16 Mbit 32 Mbit 64 Mbit

4 FF000-FFFFF 1FF000-1FFFFF 3FF000-3FFFFF 32 3F8000-3FFFFF

4 FE000-FEFFF 1FE000-1FEFFF 3FE000-3FEFFF 32 3F0000-3F7FFF

4 FD000-FDFFF 1FD000-1FDFFF 3FD000-3FDFFF 32 3E8000-3EFFFF

4 FC000-FCFFF 1FC000-1FCFFF 3FC000-3FCFFF 32 3E0000-3E7FFF

4 FB000-FBFFF 1FB000-1FBFFF 3FB000-3FBFFF 32 3D8000-3DFFFF

4 FA000-FAFFF 1FA000-1FAFFF 3FA000-3FAFFF 32 3D0000-3D7FFF

4 F9000-F9FFF 1F9000-1F9FFF 3F9000-3F9FFF 32 3C8000-3CFFFF

4 F8000-F8FFF 1F8000-1F8FFF 3F8000-3F8FFF 32 3C0000-3C7FFF

32 F0000-F7FFF 1F0000-1F7FFF 3F0000-3F7FFF 32 3B8000-3BFFFF

32 E8000-EFFFF 1E8000-1EFFFF 3E8000-3EFFFF 32 3B0000-3B7FFF

32 E0000-E7FFF 1E0000-1E7FFF 3E0000-3E7FFF 32 3A8000-3AFFFF

32 D8000-DFFFF 1D8000-1DFFFF 3D8000-3DFFFF 32 3A0000-3A7FFF

32 D0000-D7FFF 1D0000-1D7FFF 3D0000-3D7FFF 32 398000-39FFFF

32 C8000-CFFFF 1C8000-1CFFFF 3C8000-3CFFFF 32 390000-397FFF

32 C0000-C7FFF 1C0000-1C7FFF 3C0000-3C7FFF 32 388000-38FFFF

32 B8000-BFFFF 1B8000-1BFFFF 3B8000-3BFFFF 32 380000-387FFF

32 B0000-B7FFF 1B0000-1B7FFF 3B0000-3B7FFF 32 378000-37FFFF

32 A8000-AFFFF 1A8000-1AFFFF 3A8000-3AFFFF 32 370000-377FFF

32 A0000-A7FFF 1A0000-1A7FFF 3A0000-3A7FFF 32 368000-36FFFF

32 98000-9FFFF 198000-19FFFF 398000-39FFFF 32 360000-367FFF

32 90000-97FFF 190000-197FFF 390000-397FFF 32 358000-35FFFF

32 88000-8FFFF 188000-18FFFF 388000-38FFFF 32 350000-357FFF

32 80000-87FFF 180000-187FFF 380000-387FFF 32 348000-34FFFF

32 78000-7FFFF 178000-17FFFF 378000-37FFFF 32 340000-347FFF

32 70000-77FFF 170000-177FFF 370000-377FFF 32 338000-33FFFF

32 68000-6FFFF 168000-16FFFF 368000-36FFFF 32 330000-337FFF

32 60000-67FFF 160000-167FFF 360000-367FFF 32 328000-32FFFF

32 58000-5FFFF 158000-15FFFF 358000-35FFFF 32 320000-327FFF

32 50000-57FFF 150000-157FFF 350000-357FFF 32 318000-31FFFF

32 48000-4FFFF 148000-14FFFF 348000-34FFFF 32 310000-317FFF

32 40000-47FFF 140000-147FFF 340000-347FFF 32 308000-30FFFF

32 38000-3FFFF 138000-13FFFF 338000-33FFFF 32 300000-307FFF

32 30000-37FFF 130000-137FFF 330000-337FFF 32 2F8000-2FFFFF

32 28000-2FFFF 128000-12FFFF 328000-32FFFF 32 2F0000-2F7FFF

32 20000-27FFF 120000-127FFF 320000-327FFF 32 2E8000-2EFFFF

32 18000-1FFFF 118000-11FFFF 318000-31FFFF 32 2E0000-2E7FFF

32 10000-17FFF 110000-117FFF 310000-317FFF 32 2D8000-2DFFFF

32 08000-0FFFF 108000-10FFFF 308000-30FFFF 32 2D0000-2D7FFF

32 00000-07FFF 100000-107FFF 300000-307FFF 32 2C8000-2CFFFF

32 0F8000-0FFFFF 2F8000-2FFFFF 32 2C0000-2C7FFF

32 0F0000-0F7FFF 2F0000-2F7FFF 32 2B8000-2BFFFF

32 0E8000-0EFFFF 2E8000-2EFFFF 32 2B0000-2B7FFF

32 0E0000-0E7FFF 2E0000-2E7FFF 32 2A8000-2AFFFF

32 0D8000-0DFFFF 2D8000-2DFFFF 32 2A0000-2A7FFF

32 0D0000-0D7FFF 2D0000-2D7FFF 32 298000-29FFFF

32 0C8000-0CFFFF 2C8000-2CFFFF 32 290000-297FFF

32 0C0000-0C7FFF 2C0000-2C7FFF 32 288000-28FFFF

32 0B8000-0BFFFF 2B8000-2BFFFF 32 280000-287FFF

32 0B0000-0B7FFF 2B0000-2B7FFF 32 278000-27FFFF

This column continues on next page This column continues on next page

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

3UHOLPLQDU\ 43

16-Mbit, 32-Mbit, and 64-Mbit Word-Wide Memory Addressing (Continued)

Top Boot Bottom Boot

Size

(KW) 16 Mbit 32 Mbit 64 Mbit Size

(KW) 16 Mbit 32 Mbit 64 Mbit

32 0A8000-0AFFFF 2A8000-2AFFFF 32 270000-277FFF

32 0A0000-0A7FFF 2A0000-2A7FFF 32 268000-26FFFF

32 098000-09FFFF 298000-29FFFF 32 260000-267FFF

32 090000-097FFF 290000-297FFF 32 258000-25FFFF

32 088000-08FFFF 288000-28FFFF 32 250000-257FFF

32 080000-087FFF 280000-287FFF 32 248000-24FFFF

32 078000-07FFFF 278000-27FFFF 32 240000-247FFF

32 070000-077FFF 270000-277FFF 32 238000-23FFFF

32 068000-06FFFF 268000-26FFFF 32 230000-237FFF

32 060000-067FFF 260000-267FFF 32 228000-22FFFF

32 058000-05FFFF 258000-25FFFF 32 220000-227FFF

32 050000-057FFF 250000-257FFF 32 218000-21FFFF

32 048000-04FFFF 248000-24FFFF 32 210000-217FFF

32 040000-047FFF 240000-247FFF 32 208000-20FFFF

32 038000-03FFFF 238000-23FFFF 32 200000-207FFF

32 030000-037FFF 230000-237FFF 32 1F8000-1FFFFF 1F8000-1FFFFF

32 028000-02FFFF 228000-22FFFF 32 1F0000-1F7FFF 1F0000-1F7FFF

32 020000-027FFF 220000-227FFF 32 1E8000-1EFFFF 1E8000-1EFFFF

32 018000-01FFFF 218000-21FFFF 32 1E0000-1E7FFF 1E0000-1E7FFF

32 010000-017FFF 210000-217FFF 32 1D8000-1DFFFF 1D8000-1DFFFF

32 008000-00FFFF 208000-21FFFF 32 1D0000-1D7FFF 1D0000-1D7FFF

32 000000-007FFF 200000-207FFF 32 1C8000-1CFFFF 1C8000-1CFFFF

32 1F8000-1FFFFF 32 1C0000-1C7FFF 1C0000-1C7FFF

32 1F0000-1F7FFF 32 1B8000-1BFFFF 1B8000-1BFFFF

32 1E8000-1EFFFF 32 1B0000-1B7FFF 1B0000-1B7FFF

32 1E0000-1E7FFF 32 1A8000-1AFFFF 1A8000-1AFFFF

32 1D8000-1DFFFF 32 1A0000-1A7FFF 1A0000-1A7FFF

32 1D0000-1D7FFF 32 198000-19FFFF 198000-19FFFF

32 1C8000-1CFFFF 32 190000-197FFF 190000-197FFF

32 1C0000-1C7FFF 32 188000-18FFFF 188000-18FFFF

32 1B8000-1BFFFF 32 180000-187FFF 180000-187FFF

32 1B0000-1B7FFF 32 178000-17FFFF 178000-17FFFF

32 1A8000-1AFFFF 32 170000-177FFF 170000-177FFF

32 1A0000-1A7FFF 32 168000-16FFFF 168000-16FFFF

32 198000-19FFFF 32 160000-167FFF 160000-167FFF

32 190000-197FFF 32 158000-15FFFF 158000-15FFFF

32 188000-18FFFF 32 150000-157FFF 150000-157FFF

32 180000-187FFF 32 148000-14FFFF 148000-14FFFF

32 178000-17FFFF 32 140000-147FFF 140000-147FFF

32 170000-177FFF 32 138000-13FFFF 138000-13FFFF

32 168000-16FFFF 32 130000-137FFF 130000-137FFF

32 160000-167FFF 32 128000-12FFFF 128000-12FFFF

32 158000-15FFFF 32 120000-127FFF 120000-127FFF

32 150000-157FFF 32 118000-11FFFF 118000-11FFFF

32 148000-14FFFF 32 110000-117FFF 110000-117FFF

32 140000-147FFF 32 108000-10FFFF 108000-10FFFF

32 138000-13FFFF 32 100000-107FFF 100000-107FFF

32 130000-137FFF 32 F8000-FFFFF F8000-FFFFF F8000-FFFFF

32 128000-12FFFF 32 F0000-F7FFF F0000-F7FFF F0000-F7FFF

32 120000-127FFF 32 E8000-EFFFF E8000-EFFFF E8000-EFFFF

32 118000-11FFFF 32 E0000-E7FFF E0000-E7FFF E0000-E7FFF

32 110000-117FFF 32 D8000-DFFFF D8000-DFFFF D8000-DFFFF

32 108000-10FFFF 32 D0000-D7FFF D0000-D7FFF D0000-D7FFF

32 100000-107FFF 32 C8000-CFFFF C8000-CFFFF C8000-CFFFF

This column continues on next page This column continues on next page

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

44 3UHOLPLQDU\

16-Mbit, 32-Mbit, and 64-Mbit Word-Wide Memory Addressing (Continued)

Top Boot Bottom Boot

Size

(KW) 16 Mbit 32 Mbit 64 Mbit Size

(KW) 16 Mbit 32 Mbit 64 Mbit

32 0F8000-0FFFFF 32 C0000-C7FFF C0000-C7FFF C0000-C7FFF

32 0F0000-0F7FFF 32 B8000-BFFFF B8000-BFFFF B8000-BFFFF

32 0E8000-0EFFFF 32 B0000-B7FFF B0000-B7FFF B0000-B7FFF

32 0E0000-0E7FFF 32 A8000-AFFFF A8000-AFFFF A8000-AFFFF

32 0D8000-0DFFFF 32 A0000-A7FFF A0000-A7FFF A0000-A7FFF

32 0D0000-0D7FFF 32 98000-9FFFF 98000-9FFFF 98000-9FFFF

32 0C8000-0CFFFF 32 90000-97FFF 90000-97FFF 90000-97FFF

32 0C0000-0C7FFF 32 88000-8FFFF 88000-8FFFF 88000-8FFFF

32 0B8000-0BFFFF 32 80000-87FFF 80000-87FFF 80000-87FFF

32 0B0000-0B7FFF 32 78000-7FFFF 78000-7FFFF 78000-7FFFF

32 0A8000-0AFFFF 32 70000-77FFF 70000-77FFF 70000-77FFF

32 0A0000-0A7FFF 32 68000-6FFFF 68000-6FFFF 68000-6FFFF

32 098000-09FFFF 32 60000-67FFF 60000-67FFF 60000-67FFF

32 090000-097FFF 32 58000-5FFFF 58000-5FFFF 58000-5FFFF

32 088000-08FFFF 32 50000-57FFF 50000-57FFF 50000-57FFF

32 080000-087FFF 32 48000-4FFFF 48000-4FFFF 48000-4FFFF

32 078000-07FFFF 32 40000-47FFF 40000-47FFF 40000-47FFF

32 070000-077FFF 32 38000-3FFFF 38000-3FFFF 38000-3FFFF

32 068000-06FFFF 32 30000-37FFF 30000-37FFF 30000-37FFF

32 060000-067FFF 32 28000-2FFFF 28000-2FFFF 28000-2FFFF

32 058000-05FFFF 32 20000-27FFF 20000-27FFF 20000-27FFF

32 050000-057FFF 32 18000-1FFFF 18000-1FFFF 18000-1FFFF

32 048000-04FFFF 32 10000-17FFF 10000-17FFF 10000-17FFF

32 040000-047FFF 32 08000-0FFFF 08000-0FFFF 08000-0FFFF

32 038000-03FFFF 4 07000-07FFF 07000-07FFF 07000-07FFF

32 030000-037FFF 4 06000-06FFF 06000-06FFF 06000-06FFF

32 028000-02FFFF 4 05000-05FFF 05000-05FFF 05000-05FFF

32 020000-027FFF 4 04000-04FFF 04000-04FFF 04000-04FFF

32 018000-01FFFF 4 03000-03FFF 03000-03FFF 03000-03FFF

32 010000-017FFF 4 02000-02FFF 02000-02FFF 02000-02FFF

32 008000-00FFFF 4 01000-01FFF 01000-01FFF 01000-01FFF

32 000000-007FFF 4 00000-00FFF 00000-00FFF 00000-00FFF

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

3UHOLPLQDU\ 45

Appendix D Byte-Wide Memory Map Diagrams

8-Mbit and 16-Mbit Byte-Wide Byte-Wide Memory Addressing

Top Boot Bottom Boot

Size (KB) 8 Mbit 16 Mbit Size (KB) 8 Mbit 16 Mbit

8 FE000-FFFFF 1FE000-1FFFFF 64

8 FC000-FDFFF 1FC000-1FDFFF 64

8 FA000-FBFFF 1FA000-1FBFFF 64

8 F8000-F9FFF 1F8000-1F9FFF 64

8 F6000-F7FFF 1F6000-1F7FFF 64

8 F4000-F5FFF 1F4000-1F5FFF 64

8 F2000-F3FFF 1F2000-1F3FFF 64

8 F0000-F1FFF 1F0000-1F1FFF 64

64 E0000-EFFFF 1E0000-1EFFFF 64

64 D0000-DFFFF 1D0000-1DFFFF 64

64 C0000-CFFFF 1C0000-1CFFFF 64

64 B0000-BFFFF 1B0000-1BFFFF 64

64 A0000-AFFFF 1A0000-1AFFFF 64

64 90000-9FFFF 190000-19FFFF 64

64 80000-8FFFF 180000-18FFFF 64

64 70000-7FFFF 170000-17FFFF 64

64 60000-6FFFF 160000-16FFFF 64

64 50000-5FFFF 150000-15FFFF 64

64 40000-4FFFF 140000-14FFFF 64

64 30000-3FFFF 130000-13FFFF 64

64 20000-2FFFF 120000-12FFFF 64

64 10000-1FFFF 110000-11FFFF 64

64 00000-0FFFF 100000-10FFFF 64

64 0F0000-0FFFFF 64

64 0E0000-0EFFFF 64

64 0D0000-0DFFFF 64

64 0C0000-0CFFFF 64

64 0B0000-0BFFFF 64

64 0A0000-0AFFFF 64

64 090000-09FFFF 64

64 080000-08FFFF 64

64 070000-07FFFF 64

64 060000-06FFFF 64 1F0000-1FFFFF

64 050000-05FFFF 64 1E0000-1EFFFF

64 040000-04FFFF 64 1D0000-1DFFFF

64 030000-03FFFF 64 1C0000-1CFFFF

64 020000-02FFFF 64 1B0000-1BFFFF

64 010000-01FFFF 64 1A0000-1AFFFF

64 000000-00FFFF 64 190000-19FFFF

This column continues on next page This column continues on next page

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46 3UHOLPLQDU\

8-Mbit and 16-Mbit Byte-Wide Memory Addressing (Continued)

Top Boot Bottom Boot

Size (KB) 8 Mbit 16 Mbit Size (KB) 8 Mbit 16 Mbit

64 64 180000-18FFFF

64 64 170000-17FFFF

64 64 160000-16FFFF

64 64 150000-15FFFF

64 64 140000-14FFFF

64 64 130000-13FFFF

64 64 120000-12FFFF

64 64 110000-11FFFF

64 64 100000-10FFFF

64 64 F0000-FFFFF 0F0000-0FFFFF

64 64 E0000-EFFFF 0E0000-0EFFFF

64 64 D0000-DFFFF 0D0000-0DFFFF

64 64 C0000-CFFFF 0C0000-0CFFFF

64 64 B0000-BFFFF 0B0000-0BFFFF

64 64 A0000-AFFFF 0A0000-0AFFFF

64 64 90000-9FFFF 090000-09FFFF

64 64 80000-8FFFF 080000-08FFFF

64 64 70000-7FFFF 070000-07FFFF

64 64 60000-6FFFF 060000-06FFFF

64 64 50000-5FFFF 050000-05FFFF

64 64 40000-4FFFF 040000-04FFFF

64 64 30000-3FFFF 030000-03FFFF

64 64 20000-2FFFF 020000-02FFFF

64 64 10000-1FFFF 010000-01FFFF

64 8 0E000-0FFFF 00E000-00FFFF

64 8 0C000-0DFFF 00C000-00DFFF

64 8 0A000-0BFFF 00A000-00BFFF

64 8 08000-09FFF 008000-009FFF

64 8 06000-07FFF 006000-007FFF

64 8 04000-05FFF 004000-005FFF

64 8 02000-03FFF 002000-003FFF

64 8 00000-01FFF 000000-001FFF

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

3UHOLPLQDU\ 47

4-Mbit Byte-Wide Memory Addressing

Top Boot Bottom Boot

Size

(KB) 4 Mbit Size

(KB) 4 Mbit

8 7E000-7FFFF 64 70000-7FFFF

8 7C000-7DFFF 64 60000-6FFFF

8 7A000-7BFFF 64 50000-5FFFF

8 78000-79FFF 64 40000-4FFFF

8 76000-77FFF 64 30000-3FFFF

8 74000-75FFF 64 20000-2FFFF

8 72000-73FFF 64 10000-1FFFF

8 70000-71FFF 8 0E000-0FFFF

64 60000-6FFFF 8 0C000-0DFFF

64 50000-5FFFF 8 0A000-0BFFF

64 40000-4FFFF 8 08000-09FFF

64 30000-3FFFF 8 06000-07FFF

64 20000-2FFFF 8 04000-05FFF

64 10000-1FFFF 8 02000-03FFF

64 00000-0FFFF 8 00000-01FFF

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

48 3UHOLPLQDU\

Appendix E Program and Erase Flowcharts

0580_E1

Figure 10. Program Flowchart

Start

Write 40H

Program Address/Data

Read Status Register

SR.7 = 1?

Full Status

Check if Desired

Program Complete

Read Status Register

Data (See Above)

Range Error

Programming Error

Attempted Program to

Locked Block - Aborted

Program Successful

SR.3 =

SR.4 =

SR.1 =

FULL STATUS CHECK PROCEDURE

Bus Operation

Write

Standby

Repeat for subsequent programming operations.

SR Full Status Check can be done after each program or after a sequence of

program operations.

Write FFH after the last program operation to reset device to read array mode.

Bus Operation

Standby

SR.3 MUST be cleared, if set during a program attempt, before further

attempts are allowed by the Write State Machine.

SR.1, SR.3 and SR.4 are only cleared by the Clear Staus Register Command,

in cases where multiple bytes are programmed before full status is checked.

If an error is detected, clear the status register before attempting retry or other

error recovery.

Yes

Command

Program Setup

Program

Comments

Data = 40H

Data = Data to Program

Addr = Location to Program

Check SR.7

1 = WSM Ready

0 = WSM Busy

Command Comments

Check SR.3

1 = V

Low Detect

Check SR.1

1 = Attempted Program to

Locked Block - Program

Aborted

Read Status Register Data Toggle

CE# or OE# to Update Status

Standby Check SR.4

1 = V

Program Error

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

3UHOLPLQDU\ 49

0580_E2

Figure 11. Program Suspend/Resume Flowchart

Start

Write B0H

Read Status Register

Comments

Data = 70H

Addr = X

Data = FFH

Addr = X

SR.7 =

SR.2 =

Write FFH

Read Array Data

Program Completed

Done

Reading

Yes

Write FFHWrite D0H

Program Resumed Read Array Data

Read array data from block

other than the one being

programmed.

Status Register Data Toggle

CE# or OE# to Update Status

Addr = X

Check SR.7

1 = WSM Ready

0 = WSM Busy

Check SR.2

1 = Program Suspended

0 = Program Completed

Data = D0H

Addr = X

Bus

Operation

Write

Read

Standby

Write

Command

Read Status

Read Array

Program

Resume

Write 70H

Data = B0H

Addr = X

Write Program

Suspend

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

50 3UHOLPLQDU\

0580_E3

Figure 12. Block Erase Flowchart

Start

Write 20H

Write D0H and

Block Address

Read Status Register

SR.7 =

Full Status

Check if Desired

Block Erase Complete

FULL STATUS CHECK PROCEDURE

Bus Operation

Write

Standby

Repeat for subsequent block erasures.

Full Status Check can be done after each block erase or after a sequence of

block erasures.

Write FFH after the last write operation to reset device to read array mode.

Bus Operation

Standby

SR. 1 and 3 MUST be cleared, if set during an erase attempt, before further

attempts are allowed by the Write State Machine.

SR.1, 3, 4, 5 are only cleared by the Clear Staus Register Command, in cases

where multiple bytes are erased before full status is checked.

If an error is detected, clear the status register before attempting retry or other

error recovery.

No Yes

Suspend Erase

Suspend

Erase Loop

Standby

Command

Erase Setup

Erase Confirm

Comments

Data = 20H

Addr = Within Block to Be

Erased

Data = D0H

Addr = Within Block to Be

Erased

Check SR.7

1 = WSM Ready

0 = WSM Busy

Command Comments

Check SR.3

1 = V

Low Detect

Check SR.4,5

Both 1 = Command Sequence

Error

Read Status Register

Data (See Above)

Range Error

Command Sequence

Error

Block Erase

Successful

SR.3 =

SR.4,5 =

Block Erase ErrorSR.5 = 1

Attempted Erase of

Locked Block - Aborted

SR.1 = 1

Read Status Register Data Toggle

CE# or OE# to Update Status

Standby Check SR.5

1 = Block Erase Error

Standby Check SR.1

1 = Attempted Erase of

Locked Block - Erase Aborted

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

3UHOLPLQDU\ 51

0580_E4

Figure 13. Erase Suspend/Resume Flowchart

Start

Write B0H

Read Status Register

Bus Operation

Write

Command

Erase Suspend

Read Array

Comments

Data = B0H

Addr = X

Data = FFH

Addr = X

SR.7 =

SR.6 =

Write FFH

Read Array Data

Erase Completed

Done

Reading

Yes

Write FFHWrite D0H

Erase Resumed Read Array Data

Read Read array data from block

other than the one being

erased.

Read

Status Register Data Toggle

CE# or OE# to Update Status

Addr = X

Standby Check SR.7

1 = WSM Ready

0 = WSM Busy

Standby Check SR.6

1 = Erase Suspended

0 = Erase Completed

Write Erase Resume Data = D0H

Addr = X

Write Read Status Data = 70H

Addr = X

Write 70H