MRF8P18265HR6 MRF8P18265HSR6
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA and multicarrier base station applications with
frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for
all typical cellular base station modulation formats.
!Typical Doherty Single--Carrier W--CDMA Performance: VDD =30Volts,
IDQA = 800 mA, VGSB =1.3V,P
out = 72 Watts Avg., IQ Magnitude Clipping,
Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
Frequency
Gps
(dB)
"D
(%)
Output PAR
(dB)
ACPR
(dBc)
1805 MHz 15.9 44.8 6.9 --31.7
1840 MHz 16.1 43.4 7.0 --31.7
1880 MHz 16.0 43.7 6.7 --32.2
!Capable of Handling 10:1 VSWR, @ 32 Vdc, 1840 MHz, 280 Watts CW
Output Power (2 dB Input Overdrive from Rated Pout)
!Typical Pout @ 3 dB Compression Point ≃280 Watts CW
Features
!Production Tested in a Symmetrical Doherty Configuration
!100% PAR Tested for Guaranteed Output Power Capability
!Characterized with Large--Signal Load--Pull Parameters and Common Source
S--Parameters
!Internally Matched for Ease of Use
!Integrated ESD Protection
!Greater Negative Gate--Source Voltage Range for Improved Class C Operation
!Designed for Digital Predistortion Error Correction Systems
!In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +65 Vdc
Gate--Source Voltage VGS --6.0, +10 Vdc
Operating Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg --65 to +150 #C
Case Operating Temperature TC150 #C
Operating Junction Temperature (1,2) TJ225 #C
CW Operation @ TC=25#C
Derate above 25#C
CW 446
4.5
W
W/#C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
Case Temperature 74#C, 72.5 W CW, 30 Vdc, IDQA = 800 mA, VGSB = 1.3 V, 1880 MHz
Case Temperature 90#C, 260 W CW(4),30Vdc,I
DQA = 800 mA, VGSB = 1.3 V, 1880 MHz
R$JC
0.27
0.25
#C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
Document Number: MRF8P18265H
Rev. 1, 2/2012
Freescale Semiconductor
Technical Data
1805--1880 MHz, 72 W AVG., 30 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
MRF8P18265HR6
MRF8P18265HSR6
CASE 375I--04
NI--1230--8
MRF8P18265HR6
CASE 375J--03
NI--1230S--8
MRF8P18265HSR6
(Top View)
RFoutA/VDSA
Figure 1. Pin Connections
RFoutB/VDSB
RFinA/VGSA
RFinB/VGSB
VBWA
N.C.
VBWB
18
45
27
36
N.C.
%Freescale Semiconductor, Inc., 2010, 2012.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor, Inc.
MRF8P18265HR6 MRF8P18265HSR6
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2
Machine Model (per EIA/JESD22--A115) A
Charge Device Model (per JESD22--C101) IV
Table 4. Electrical Characteristics (TA=25#C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics (1)
Zero Gate Voltage Drain Leakage Current
(VDS =65Vdc,V
GS =0Vdc)
IDSS — — 10 &Adc
Zero Gate Voltage Drain Leakage Current
(VDS =30Vdc,V
GS =0Vdc)
IDSS — — 1 &Adc
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 1 &Adc
On Characteristics (1)
Gate Threshold Voltage
(VDS =10Vdc,I
D= 200 &Adc)
VGS(th) 1.1 1.9 2.6 Vdc
Gate Quiescent Voltage
(VDD =30Vdc,I
DA = 800 mAdc, Measured in Functional Test)
VGS(Q) 1.8 2.6 3.3 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=2Adc)
VDS(on) 0.1 0.15 0.3 Vdc
Functional Tests (2,3) (In Freescale Doherty Test Fixture, 50 ohm system) VDD =30Vdc,I
DQA = 800 mA, VGSB =1.3V,P
out =72WAvg.,
f = 1880 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured
in 3.84 MHz Channel Bandwidth @ '5MHzOffset.
Power Gain Gps 13.8 16.0 17.0 dB
Drain Efficiency "D41.0 43.7 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 6.0 6.7 —dB
Adjacent Channel Power Ratio ACPR —--32.2 --28.0 dBc
Typical Broadband Performance (3) (In Freescale Doherty Test Fixture, 50 ohm system) VDD =30Vdc,I
DQA = 800 mA, VGSB =1.3V,
Pout = 72 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR
measured in 3.84 MHz Channel Bandwidth @ '5MHzOffset.
Frequency
Gps
(dB)
"D
(%)
Output PAR
(dB)
ACPR
(dBc)
1805 MHz 15.9 44.8 6.9 --31.7
1840 MHz 16.1 43.4 7.0 --31.7
1880 MHz 16.0 43.7 6.7 --32.2
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in a symmetrical Doherty configuration.
(continued)
MRF8P18265HR6 MRF8P18265HSR6
3
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA=25#C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Typical Performance (1) (In Freescale Doherty Test Fixture, 50 ohm system) VDD =30Vdc, I
DQA = 800 mA, VGSB = 1.3 V, 1805--1880 MHz
Bandwidth
Pout @ 1 dB Compression Point, CW P1dB —224 — W
Pout @ 3 dB Compression Point, CW P3dB —280 — W
IMD Symmetry @ 17 W PEP, Pout where IMD Third Order
Intermodulation 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
—72 —
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres —88 —MHz
Gain Flatness in 75 MHz Bandwidth @ Pout =72WAvg. GF—0.4 —dB
Gain Variation over Temperature
(--30#Cto+85#C)
(G — 0.01 —dB/#C
Output Power Variation over Temperature
(--30#Cto+85#C) (2)
(P1dB —0.005 —dB/#C
1. Measurement made with device in a symmetrical Doherty configuration.
2. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
4
RF Device Data
Freescale Semiconductor, Inc.
MRF8P18265HR6 MRF8P18265HSR6
Figure 2. MRF8P18265HR6(HSR6) Test Circuit Component Layout
C7
VGSA
MRF8P18265H
Rev. 3
CUT OUT AREA
C5 C3
R2
C1
C2
Z1
R1
C4
R3
C6
C8
VGSB
C15
C16
C13
C14
C17
C18
C19
C20
C11
C12
C22
C21
C9
C10
C23
C24
C25
VDSB
C
P
VDSA
Table 5. MRF8P18265HR6(HSR6) Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1, C2, C3, C4, C13, C14,
C23, C24
15 pF Chip Capacitors ATC600F150JT250XT ATC
C5, C6, C11, C12 10 &F, 50 V Chip Capacitors GRM55DR61H106KA88L Murata
C7, C8 100 &F, 50 V Chip Capacitors MCGPR50V107M8X11 Multicomp
C9, C10 470 &F, 63 V Chip Capacitors MCGPR63V477M13X26--RH Multicomp
C15, C16 6.8 &F Chip Capacitors C4532X7RIH685KT TDK
C17, C18 2.2 pF Chip Capacitors ATC600F2R2BT250XT ATC
C19, C20 0.8 pF Chip Capacitors ATC600F0R8BT250XT ATC
C21, C22 0.3 pF Chip Capacitors ATC600F0R3BT250XT ATC
C25 0.1 pF Chip Capacitor ATC600F0R1BT250XT ATC
R1 50 ), 4 W Chip Resistor CW12010T0050GBK ATC
R2, R3 10 ), 1/4 W Chip Resistors CRCW120610R0FKEA Vishay
Z1 1900 MHz Band 90#, 3 dB Chip Hybrid Coupler GCS351--HYB1900 Soshin
PCB 0.020*,+r=3.5 RF--35 Taconic
MRF8P18265HR6 MRF8P18265HSR6
5
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
IRL, INPUT RETURN LOSS (dB)
1760
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 3. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 72 Watts Avg.
-- 2 2
-- 1 0
-- 1 3
-- 1 6
-- 1 9
14.8
16.8
16.6
16.4
-- 3 3
47
46
45
44
-- 2 8
-- 2 9
-- 3 0
-- 3 1
Gps, POWER GAIN (dB)
16.2
16
15.8
15.6
15.4
15.2
15
1780 1800 1820 1840 1860 1880 1900 1920
43
-- 3 2
-- 2 5
PARC
PARC (dB)
-- 3 . 6
-- 2
-- 2 . 4
-- 2 . 8
-- 3 . 2
-- 4
ACPR (dBc)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
TWO--TONE SPACING (MHz)
10
-- 7 0
-- 2 0
-- 3 0
-- 4 0
-- 6 0
1 100
IMD, INTERMODULATION DISTORTION (dBc)
-- 5 0
IM5--U IM5--L
IM7--U
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
-- 1
-- 3
-- 5
45
0
-- 2
-- 4
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
25 65 85 125
0
60
50
40
30
20
10
-- 3 d B = 7 2 W
105
ACPR
PARC
ACPR (dBc)
-- 3 7
-- 2 5
-- 2 7
-- 2 9
-- 3 3
-- 3 1
-- 3 5
17.5
Gps, POWER GAIN (dB)
17
16.5
16
15.5
15
14.5
Gps
-- 2 d B = 5 2 W
-- 1 d B = 3 6 W
IM3--L
"D
"D, DRAIN
EFFICIENCY (%)
"D,DRAIN EFFICIENCY (%)
"D
Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF
VDD =30Vdc,P
out =72W(Avg.),I
DQA = 800 mA, VGSB =1.3Vdc
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF
VDD =30Vdc,I
DQA = 800 mA, VGSB =1.3Vdc
f = 1840 MHz, Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth
VDD =30Vdc,P
out = 17 W (PEP)
IDQA = 800 mA, VGSB =1.3Vdc
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1840 MHz
IM3--U
IM7--L
6
RF Device Data
Freescale Semiconductor, Inc.
MRF8P18265HR6 MRF8P18265HSR6
TYPICAL CHARACTERISTICS
1
Gps
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
-- 1 0
-- 2 0
11
17
0
60
50
40
30
20
Gps, POWER GAIN (dB)
16
15
10 300
10
-- 6 0
ACPR (dBc)
14
13
12
0
-- 3 0
-- 4 0
-- 5 0
Figure 7. Broadband Frequency Response
0
18
1700
f, FREQUENCY (MHz)
12
9
6
1750
GAIN (dB)
15 Gain
1800 1850 1900 1950 2000
IRL
-- 5 0
10
0
-- 1 0
-- 2 0
-- 3 0
IRL (dB)
3--40
1805 MHz 1840 MHz
1880 MHz
Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
VDD =30Vdc
Pin =0dBm
IDQA = 800 mA
VGSB =1.3Vdc
"D,DRAIN EFFICIENCY (%)
"D
100
ACPR
1880 MHz
1840 MHz
1805 MHz
VDD =30Vd
IDQA = 800 mA
VGSB =1.3Vdc
1880 MHz
1840 MHz
1805 MHz
W--CDMA TEST SIGNAL
10
0.0001
100
0
PEAK--TO--AVERAGE (dB)
Figure 8. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
1
0.1
0.01
0.001
2468
PROBABILITY (%)
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ '5MHzOffset.
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
Input Signal
12
-- 6 0
--100
10
(dB)
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 7 0
-- 8 0
-- 9 0
3.84 MHz
Channel BW
7.21.8 5.43.60-- 1 . 8-- 3 . 6-- 5 . 4-- 9 9
f, FREQUENCY (MHz)
Figure 9. Single--Carrier W--CDMA Spectrum
-- 7 . 2
--ACPR in 3.84 MHz
Integrated BW
+ACPRin3.84MHz
Integrated BW
-- 1 0
0
MRF8P18265HR6 MRF8P18265HSR6
7
RF Device Data
Freescale Semiconductor, Inc.
VDD =30Vdc,I
DQA = 800 mA
f
MHz
Max Pout (1) Zsource
)
Zload
)
Watts dBm
1805 195 52.9 2.38 -- j6.43 1.31 -- j2.51
1840 195 52.9 3.70 -- j7.13 1.21 -- j2.50
1880 190 52.8 4.23 -- j7.74 1.24 -- j2.51
(1) Maximum output power measurement reflects pulsed 1 dB gain compression.
Zsource = Test circuit impedance as measured from gate contact to ground.
Zload = Test circuit impedance as measured from drain contact to ground.
Figure 10. Carrier Side Load Pull Performance — Maximum P1dB Tuning
Zsource Zload
Input
Load Pull
Tuner
Device
Under
Test
Output
Load Pull
Tuner
VDD =30Vdc,I
DQA = 800 mA
f
MHz
Max Eff. (1)
%
Zsource
)
Zload
)
1805 69.3 2.38 -- j6.43 3.10 -- j1.22
1840 68.9 3.70 -- j7.13 2.59 -- j1.37
1880 68.3 4.23 -- j7.74 2.47 -- j1.17
(1) Maximum output power measurement reflects pulsed 1 dB gain compression.
Zsource = Test circuit impedance as measured from gate contact to ground.
Zload = Test circuit impedance as measured from drain contact to ground.
Figure 11. Carrier Side Load Pull Performance — Maximum Efficiency Tuning
Zsource Zload
Device
Under
Test
Output
Load Pull
Tuner
Input
Load Pull
Tuner
8
RF Device Data
Freescale Semiconductor, Inc.
MRF8P18265HR6 MRF8P18265HSR6
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD =30Vdc,I
DQA = 800 mA, Pulsed CW, 10 &sec(on), 10% Duty Cycle
Ideal
Actual
1805 MHz
34
Pin, INPUT POWER (dBm)
54
52
50
35
55
53
47
Pout, OUTPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 30 V
51
56
58
3331 393029
57
49
48
28 32 36 37 38
1880 MHz
1845 MHz
1805 MHz
1880 MHz
1845 MHz
f
(MHz)
P1dB P3dB
Watts dBm Watts dBm
1805 197 52.9 226 53.5
1845 194 52.9 223 53.5
1880 190 52.8 226 53.5
Test Impedances per Compression Level
f
(MHz)
Zsource
)
Zload
)
1805 P1dB 2.38 -- j6.43 1.30 -- j2.46
1845 P1dB 3.70 -- j7.13 1.40 -- j2.51
1880 P1dB 4.23 -- j7.74 1.27 -- j2.55
Figure 12. Pulsed CW Output Power
versus Input Power @ 30 V
NOTE: Measurement made on the Class AB, carrier side of the device.
MRF8P18265HR6 MRF8P18265HSR6
9
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
10
RF Device Data
Freescale Semiconductor, Inc.
MRF8P18265HR6 MRF8P18265HSR6
MRF8P18265HR6 MRF8P18265HSR6
11
RF Device Data
Freescale Semiconductor, Inc.
12
RF Device Data
Freescale Semiconductor, Inc.
MRF8P18265HR6 MRF8P18265HSR6
MRF8P18265HR6 MRF8P18265HSR6
13
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
!AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
!EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
!Electromigration MTTF Calculator
!RF High Power Model
!.s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Aug. 2010 !Initial Release of Data Sheet
1Feb. 2012 !Table 3, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD
ratings are characterized during new product development but are not 100% tested during production. ESD
ratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitive
devices, p. 2
!Removed Fig. 5, Possible Circuit Topologies, and renumbered all subsequent figures, p. 5--8
!Replaced Case Outline 375I--03, Issue B with 375I--04, Issue C, p. 1, 9, 10. On Sheet 2, changed
dimension F in mm from 0.1--0.18 to 0.10--0.18, changed dimension U in mm from 0.89--1.02 to 0.89--1.14,
changed dimension W3 in mm from 12.47--12.72 to 12.47--12.73.
!Replaced Case Outline 375J--02, Issue A with 375J--03, Issue B, p. 1, 11, 12. On Sheet 2, changed
dimension A in mm from 32.13--32.38 to 32.13--32.39, changed dimension F in mm from 0.1--0.18 to
0.10--0.18, changed dimension U in mm from 8.89--11.43 to 0.89--1.14.
14
RF Device Data
Freescale Semiconductor, Inc.
MRF8P18265HR6 MRF8P18265HSR6
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Document Number: MRF8P18265H
Rev. 1, 2/2012
