M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories Features Supply voltage - VDD = 2.7 V to 3.6 V for program, erase and read - VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers - VPP = 12 V for fast program (optional) High performance - Access times: 70, 80 ns - 56 MHz effective zero wait-state burst read - Synchronous burst read - Asynchronous page read PQFP80 (T) Hardware block protection - WP pin for write protect of the 2 outermost parameter blocks and all main blocks - RP pin for write protect of all blocks LBGA Optimized for FDI drivers - Fast program / erase suspend latency time < 6 s - Common Flash interface LBGA80 10 x 12 mm Memory blocks - 8 parameters blocks (top or bottom) - 31 main blocks RoHS packages available Low power consumption - 5 A typical deep power-down - 60 A typical standby for M58BW016DT/B 150 A typical standby for M58BW016FT/B - Automatic standby after asynchronous read Electronic signature - Manufacturer code: 20h - Top device code: 8836h - Bottom device code: 8835h 100 K write/erase cycling + 20 years data retention (minimum) High reliability level with over 1 M write/erase cycling sustained July 2011 Rev 18 1/70 www.numonyx.com 1 Contents M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 1.1 2 3 Signal descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2.1 Address inputs (A0-A18) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2.2 Data inputs/outputs (DQ0-DQ31) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2.3 Chip Enable (E) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2.4 Output Enable (G) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2.5 Output Disable (GD) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2.6 Write Enable (W) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2.7 Reset/Power-down (RP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2.8 Latch Enable (L) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2.9 Burst Clock (K) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2.10 Burst Address Advance (B) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2.11 Valid Data Ready (R) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2.12 Write Protect (WP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2.13 Supply voltage (VDD) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2.14 Output supply voltage (VDDQ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2.15 Input supply voltage (VDDQIN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2.16 Program/erase supply voltage (VPP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2.17 Ground (VSS and VSSQ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2.18 Don't use (DU) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2.19 Not connected (NC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 3.1 2/70 Block protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 Asynchronous bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 3.1.1 Asynchronous bus read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 3.1.2 Asynchronous latch controlled bus read . . . . . . . . . . . . . . . . . . . . . . . . 18 3.1.3 Asynchronous page read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 3.1.4 Asynchronous bus write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 3.1.5 Asynchronous latch controlled bus write . . . . . . . . . . . . . . . . . . . . . . . . 19 3.1.6 Output Disable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB 3.2 3.3 4 5 Contents 3.1.7 Standby mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 3.1.8 Automatic low power mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 3.1.9 Power-down mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 3.1.10 Electronic signature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Synchronous bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 3.2.1 Synchronous burst read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 3.2.2 Synchronous burst read suspend . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Burst configuration register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 3.3.1 Read select bit (M15) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 3.3.2 X-Latency bits (M14-M11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 3.3.3 Y-Latency bit (M9) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 3.3.4 Valid data ready bit (M8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 3.3.5 Burst type bit (M7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 3.3.6 Valid clock edge bit (M6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 3.3.7 Wrap burst bit (M3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 3.3.8 Burst length bit (M2-M0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Command interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 4.1 Read Memory Array command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 4.2 Read Electronic Signature command . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 4.3 Read Query command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 4.4 Read Status Register command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 4.5 Clear Status Register command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 4.6 Block Erase command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 4.7 Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 4.8 Program/Erase Suspend command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 4.9 Program/Erase Resume command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 4.10 Set Burst Configuration Register command . . . . . . . . . . . . . . . . . . . . . . . 32 Status register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 5.1 Program/erase controller status (bit 7) . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 5.2 Erase suspend status (bit 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 5.3 Erase status (bit 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 5.4 Program status (bit 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 5.5 VPP status (bit 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 3/70 Contents M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB 5.6 Program suspend status (bit 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 5.7 Block protection status (bit 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 6 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 7 DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 8 Package mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52 9 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 Appendix A Common Flash interface (CFI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56 Appendix B Flowcharts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59 10 4/70 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68 M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB List of tables List of tables Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Table 10. Table 11. Table 12. Table 13. Table 14. Table 15. Table 16. Table 17. Table 18. Table 19. Table 20. Table 21. Table 22. Table 23. Table 24. Table 25. Table 26. Table 27. Table 28. Table 29. Table 30. Table 31. Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 M58BW016DT and M58BW016FT top boot block addresses . . . . . . . . . . . . . . . . . . . . . . 12 M58BW016DB and M58BW016FB bottom boot block addresses . . . . . . . . . . . . . . . . . . . 13 Asynchronous bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Asynchronous read electronic signature operation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Synchronous burst read bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Burst configuration register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Burst type definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Program, erase times and program, erase endurance cycles . . . . . . . . . . . . . . . . . . . . . . 33 Status register bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 Operating and AC measurement conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 Device capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 DC characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 Asynchronous bus read AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 Asynchronous latch controlled bus read AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . 42 Asynchronous page read AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 Asynchronous write and latch controlled write AC characteristics . . . . . . . . . . . . . . . . . . . 46 Synchronous burst read AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48 Power supply AC and DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 Reset, power-down and power-up AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 PQFP80 - 80 lead plastic quad flat pack, package mechanical data . . . . . . . . . . . . . . . . . 53 LBGA80 10 x 12 mm - 8 x 10 active ball array, 1 mm pitch, package mechanical data . . 54 Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 Query structure overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56 CFI - query address and data output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56 CFI - device voltage and timing specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57 Device geometry definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57 Extended query information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58 Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68 5/70 List of figures M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB List of figures Figure 1. Figure 2. Figure 3. Figure 4. Figure 5. Figure 6. Figure 7. Figure 8. Figure 9. Figure 10. Figure 11. Figure 12. Figure 13. Figure 14. Figure 15. Figure 16. Figure 17. Figure 18. Figure 19. Figure 20. Figure 21. Figure 22. Figure 23. Figure 24. Figure 25. Figure 26. Figure 27. Figure 28. Figure 29. Figure 30. 6/70 Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 PQFP connections (top view through package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 LBGA connections (top view through package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Example burst configuration X-1-1-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Example burst configuration X-2-2-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 AC measurement input/output waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 AC measurement load circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 Asynchronous bus read AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 Asynchronous latch controlled bus read AC waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . 42 Asynchronous page read AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 Asynchronous write AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 Asynchronous latch controlled write AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 Synchronous burst read (data valid from `n' clock rising edge) . . . . . . . . . . . . . . . . . . . . . 47 Synchronous burst read (data valid from `n' clock rising edge) . . . . . . . . . . . . . . . . . . . . . 48 Synchronous burst read - continuous - valid data ready output . . . . . . . . . . . . . . . . . . . . . 49 Synchronous burst read - burst address advance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 Reset, power-down and power-up AC waveforms - control pins low . . . . . . . . . . . . . . . . . 50 Reset, power-down and power-up AC waveforms - control pins toggling . . . . . . . . . . . . . 50 Power supply slope specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 PQFP80 - 80 lead plastic quad flat pack, package outline . . . . . . . . . . . . . . . . . . . . . . . . . 52 LBGA80 10 x 12 mm - 8 x 10 active ball array, 1 mm pitch, package outline . . . . . . . . . . 54 Program flowchart and pseudocode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59 Program suspend & resume flowchart and pseudocode . . . . . . . . . . . . . . . . . . . . . . . . . . 60 Block erase flowchart and pseudocode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61 Erase suspend & resume flowchart and pseudocode . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62 Power-up sequence followed by synchronous burst read . . . . . . . . . . . . . . . . . . . . . . . . . 63 Command interface and program/erase controller flowchart (a). . . . . . . . . . . . . . . . . . . . . 64 Command interface and program/erase controller flowchart (b). . . . . . . . . . . . . . . . . . . . . 65 Command interface and program/erase controller flowchart (c). . . . . . . . . . . . . . . . . . . . . 66 Command interface and program/erase controller flowchart (d). . . . . . . . . . . . . . . . . . . . . 67 Important Notes and Warnings Important Notes and Warnings Micron Technology, Inc. ("Micron") reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions. This document supersedes and replaces all information supplied prior to the publication hereof. You may not rely on any information set forth in this document if you obtain the product described herein from any unauthorized distributor or other source not authorized by Micron. Automotive Applications. Products are not designed or intended for use in automotive applications unless specifically designated by Micron as automotive-grade by their respective data sheets. Distributor and customer/distributor shall assume the sole risk and liability for and shall indemnify and hold Micron harmless against all claims, costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of product liability, personal injury, death, or property damage resulting directly or indirectly from any use of nonautomotive-grade products in automotive applications. Customer/distributor shall ensure that the terms and conditions of sale between customer/distributor and any customer of distributor/customer (1) state that Micron products are not designed or intended for use in automotive applications unless specifically designated by Micron as automotive-grade by their respective data sheets and (2) require such customer of distributor/customer to indemnify and hold Micron harmless against all claims, costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of product liability, personal injury, death, or property damage resulting from any use of non-automotive-grade products in automotive applications. Critical Applications. Products are not authorized for use in applications in which failure of the Micron component could result, directly or indirectly in death, personal injury, or severe property or environmental damage ("Critical Applications"). Customer must protect against death, personal injury, and severe property and environmental damage by incorporating safety design measures into customer's applications to ensure that failure of the Micron component will not result in such harms. Should customer or distributor purchase, use, or sell any Micron component for any critical application, customer and distributor shall indemnify and hold harmless Micron and its subsidiaries, subcontractors, and affiliates and the directors, officers, and employees of each against all claims, costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of product liability, personal injury, or death arising in any way out of such critical application, whether or not Micron or its subsidiaries, subcontractors, or affiliates were negligent in the design, manufacture, or warning of the Micron product. Customer Responsibility. Customers are responsible for the design, manufacture, and operation of their systems, applications, and products using Micron products. ALL SEMICONDUCTOR PRODUCTS HAVE INHERENT FAILURE RATES AND LIMITED USEFUL LIVES. IT IS THE CUSTOMER'S SOLE RESPONSIBILITY TO DETERMINE WHETHER THE MICRON PRODUCT IS SUITABLE AND FIT FOR THE CUSTOMER'S SYSTEM, APPLICATION, OR PRODUCT. Customers must ensure that adequate design, manufacturing, and operating safeguards are included in customer's applications and products to eliminate the risk that personal injury, death, or severe property or environmental damages will result from failure of any semiconductor component. Limited Warranty. In no event shall Micron be liable for any indirect, incidental, punitive, special or consequential damages (including without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort, warranty, breach of contract or other legal theory, unless explicitly stated in a written agreement executed by Micron's duly authorized representative. M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB 1 Description Description The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16-Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the input and output buffers. Optionally a 12 V VPP supply can be used to provide fast program and erase for a limited time and number of program/erase cycles. The devices support asynchronous (latch controlled and page read) and synchronous bus operations. The synchronous burst read interface allows a high data transfer rate controlled by the burst clock, K, signal. It is capable of bursting fixed or unlimited lengths of data. The burst type, latency and length can be configured and can be easily adapted to a large variety of system clock frequencies and microprocessors. All writes are asynchronous. On power-up the memory defaults to read mode with an asynchronous bus. The devices have a boot block architecture with an array of 8 parameter blocks of 64 Kbits each and 31 main blocks of 512 Kbits each. In the M58BW016DT and M58BW016FT the parameter blocks are located at the top of the address space whereas in the M58BW016DB and M58BW016FB, they are located at the bottom. Program and erase commands are written to the command interface of the memory. An onchip program/erase controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified in the status register. The command set required to control the memory is consistent with JEDEC standards. Erase can be suspended in order to perform either read or program in any other block and then resumed. Program can be suspended to read data in any other block and then resumed. Each block can be programmed and erased over 100,000 cycles. All blocks are protected during power-up. The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB feature two different levels of block protection to avoid unwanted program/erase operations: The WP pin offers an hardware protection on two of the parameter blocks and all of the main blocks All program or erase operations are blocked when Reset, RP, is held Low. A reset/power-down mode is entered when the RP input is Low. In this mode the power consumption is lower than in the normal standby mode, the device is write protected and both the status and the burst configuration registers are cleared. A recovery time is required when the RP input goes High. The memory is offered in a PQFP80 (14 x 20 mm) and LBGA80 (10 x 12 mm) package. The memories are supplied with all the bits erased (set to '1'). In the present document, M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB will be referred to as M58BW016 unless otherwise specified. 7/70 Description M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Figure 1. Logic diagram VDD VDDQ VDDQIN VPP DQ0-DQ31 A0-A18 K L E RP G M58BW016DT M58BW016DB M58BW016FT M58BW016FB R GD W WP B VSS 8/70 VSSQ AI11201b M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Table 1. Description Signal names Signal A0-A18 Description Address inputs Direction Inputs DQ0-DQ7 Data input/output, command input I/O DQ8-DQ15 Data input/output, Burst Configuration Register I/O DQ16-DQ31 Data input/output I/O B Burst Address Advance Input E Chip Enable Input G Output Enable Input K Burst Clock Input L Latch Enable Input R Valid Data Ready (open drain output) Output RP Reset/Power-down Input W Write Enable Input GD Output Disable Input WP Write Protect Input VDD Supply voltage Supply Power supply for output buffers Supply Power supply for input buffers only Supply VPP Optional supply voltage for fast program and fast erase operations Supply VSS Ground - VSSQ Input/output ground - NC Not connected internally - DU Don't use as internally connected - VDDQ VDDQIN 9/70 Description M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB PQFP connections (top view through package) 1 64 53 40 41 VSS VPP VDD A9 A10 A11 A12 A13 A14 A15 25 24 32 M58BW016DT M58BW016DB M58BW016FT M58BW016FB 12 A3 A4 A5 A6 A7 A8 DQ16 DQ17 DQ18 DQ19 VDDQ VSSQ DQ20 DQ21 DQ22 DQ23 DQ24 DQ25 DQ26 DQ27 VDDQ VSSQ DQ28 DQ29 DQ30 DQ31 DU A0 A1 A2 65 80 73 DU R GD WP W G E VDD B VSS L NC NC K RP VDDQIN Figure 2. AI11202b 10/70 DQ15 DQ14 DQ13 DQ12 VSSQ VDDQ DQ11 DQ10 DQ9 DQ8 DQ7 DQ6 DQ5 DQ4 VSSQ VDDQ DQ3 DQ2 DQ1 DQ0 NC A18 A17 A16 M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Figure 3. Description LBGA connections (top view through package) 1 2 3 4 5 6 7 8 A A15 A14 VDD VPP VSS A6 A3 A2 B A16 A13 A12 A9 A8 A5 A4 A1 C A17 A18 A11 A10 NC A7 NC A0 D DQ3 DQ0 NC NC NC DQ31 DQ30 DQ29 E VDDQ DQ4 DQ2 DQ1 DQ27 DQ28 DQ26 VDDQ F VSSQ DQ7 DQ6 DQ5 NC DQ25 DQ24 VSSQ G VDDQ DQ8 DQ10 DQ9 DQ22 DQ21 DQ23 VDDQ H DQ13 DQ12 DQ11 WP DQ17 DQ19 DQ18 DQ20 I DQ15 DQ14 L B E G R DQ16 J VDDQIN RP K VSS VDD W GD NC AI04151C 1.1 Block protection The M58BW016 feature two different levels of block protection. Write protect pin, WP - When WP is Low, VIL, all the lockable parameter blocks (two upper (top) or lower (bottom)) and all the main blocks are protected. When WP is High (VIH) all the lockable parameter blocks and all the main blocks are unprotected Reset/power-down pin, RP - If the device is held in reset mode (RP at VIL), no program or erase operations can be performed on any block. After a device reset the first two kinds of block protection (WP, RP) can be combined to give a flexible block protection. 11/70 Description M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Table 2. 12/70 M58BW016DT and M58BW016FT top boot block addresses # Size (Kbit) Address range 38 64 7F800h-7FFFFh 37 64 7F000h-7F7FFh 36 64 7E800h-7EFFFh 35 64 7E000h-7E7FFh 34 64 7D800h-7DFFFh 33 64 7D000h-7D7FFh 32 64 7C800h-7CFFFh 31 64 7C000h-7C7FFh 30 512 78000h-7BFFFh 29 512 74000h-77FFFh 28 512 70000h-73FFFh 27 512 6C000h-6FFFFh 26 512 68000h-6BFFFh 25 512 64000h-67FFFh 24 512 60000h-63FFFh 23 512 5C000h-5FFFFh 22 512 58000h-5BFFFh 21 512 54000h-57FFFh 20 512 50000h-53FFFh 19 512 4C000h-4FFFFh 18 512 48000h-4BFFFh 17 512 44000h-47FFFh 16 512 40000h-43FFFh 15 512 3C000h-3FFFFh 14 512 38000h-3BFFFh 13 512 34000h-37FFFh 12 512 30000h-33FFFh 11 512 2C000h-2FFFFh 10 512 28000h-2BFFFh 9 512 24000h-27FFFh 8 512 20000h-23FFFh 7 512 1C000h-1FFFFh 6 512 18000h-1BFFFh 5 512 14000h-17FFFh 4 512 10000h-13FFFh 3 512 0C000h-0FFFFh 2 512 08000h-0BFFFh 1 512 04000h-07FFFh 0 512 00000h-03FFFh M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Table 3. Description M58BW016DB and M58BW016FB bottom boot block addresses # Size (Kbit) Address range 38 512 7C000h-7FFFFh 37 512 78000h-7BFFFh 36 512 74000h-77FFFh 35 512 70000h-73FFFh 34 512 6C000h-6FFFFh 33 512 68000h-6BFFFh 32 512 64000h-67FFFh 31 512 60000h-63FFFh 30 512 5C000h-5FFFFh 29 512 58000h-5BFFFh 28 512 54000h-57FFFh 27 512 50000h-53FFFh 26 512 4C000h-4FFFFh 25 512 48000h-4BFFFh 24 512 44000h-47FFFh 23 512 40000h-43FFFh 22 512 3C000h-3FFFFh 21 512 38000h-3BFFFh 20 512 34000h-37FFFh 19 512 30000h-33FFFh 18 512 2C000h-2FFFFh 17 512 28000h-2BFFFh 16 512 24000h-27FFFh 15 512 20000h-23FFFh 14 512 1C000h-1FFFFh 13 512 18000h-1BFFFh 12 512 14000h-17FFFh 11 512 10000h-13FFFh 10 512 0C000h-0FFFFh 9 512 08000h-0BFFFh 8 512 04000h-07FFFh 7 64 03800h-03FFFh 6 64 03000h-037FFh 5 64 02800h-02FFFh 4 64 02000h-027FFh 3 64 01800h-01FFFh 2 64 01000h-017FFh 1 64 00800h-00FFFh 0 64 00000h-007FFh 13/70 Signal descriptions 2 M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Signal descriptions See Figure 1: Logic diagram, and Table 1: Signal names for a brief overview of the signals connected to this device. 2.1 Address inputs (A0-A18) The address inputs are used to select the cells to access in the memory array during bus operations either to read or to program data. During bus write operations they control the commands sent to the command interface of the program/erase controller. Chip Enable must be Low when selecting the addresses. The address inputs are latched on the rising edge of Latch Enable L or Burst Clock K, whichever occurs first, in a read operation.The address inputs are latched on the rising edge of Chip Enable, Write Enable or Latch Enable, whichever occurs first in a write operation. The address latch is transparent when Latch Enable is Low, VIL. The address is internally latched in an erase or program operation. 2.2 Data inputs/outputs (DQ0-DQ31) The data inputs/outputs output the data stored at the selected address during a bus read operation, or are used to input the data during a program operation. During bus write operations they represent the commands sent to the command interface of the program/erase controller. When used to input data or write commands they are latched on the rising edge of Write Enable or Chip Enable, whichever occurs first. When Chip Enable and Output Enable are both Low, VIL, and Output Disable is at VIH, the data bus outputs data from the memory array, the electronic signature, the CFI information or the contents of the status register. The data bus is high impedance when the device is deselected with Chip Enable at VIH, Output Enable at VIH, Output Disable at VIL or Reset/Power-down at VIL. The status register content is output on DQ0-DQ7 and DQ8DQ31 are at VIL. 2.3 Chip Enable (E) The Chip Enable, E, input activates the memory control logic, input buffers, decoders and sense amplifiers. Chip Enable, E, at VIH deselects the memory and reduces the power consumption to the standby level. 2.4 Output Enable (G) The Output Enable, G, gates the outputs through the data output buffers during a read operation, when Output Disable GD is at VIH. When Output Enable G is at VIH, the outputs are high impedance independently of Output Disable. 14/70 M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB 2.5 Signal descriptions Output Disable (GD) The Output Disable, GD, deactivates the data output buffers. When Output Disable, GD, is at VIH, the outputs are driven by the Output Enable. When Output Disable, GD, is at VIL, the outputs are high impedance independently of Output Enable. The Output Disable pin must be connected to an external pull-up resistor as there is no internal pull-up resistor to drive the pin. 2.6 Write Enable (W) The Write Enable, W, input controls writing to the command interface, Address inputs and Data latches. Both addresses and data can be latched on the rising edge of Write Enable (also see Latch Enable, L). 2.7 Reset/Power-down (RP) The Reset/Power-down, RP, is used to apply a hardware reset to the memory. A hardware reset is achieved by holding Reset/Power-down Low, VIL, for at least tPLPH. Writing is inhibited to protect data, the command interface and the program/erase controller are reset. The status register information is cleared and power consumption is reduced to deep power-down level. The device acts as deselected, that is the data outputs are high impedance. After Reset/Power-down goes High, VIH, the memory will be ready for bus read operations after a delay of tPHEL or bus write operations after tPHWL. If Reset/Power-down goes Low, VIL, during a Block Erase, or a Program the operation is aborted, in a time of tPLRH maximum, and data is altered and may be corrupted. During power-up power should be applied simultaneously to VDD and VDDQ(IN) with RP held at VIL. When the supplies are stable RP is taken to VIH. Output Enable, G, Chip Enable, E, and Write Enable, W, should be held at VIH during power-up. In an application, it is recommended to associate reset/power-down pin, RP, with the reset signal of the microprocessor. Otherwise, if a reset operation occurs while the memory is performing an erase or program operation, the memory may output the status register information instead of being initialized to the default asynchronous random read. See Table 22: Reset, power-down and power-up AC characteristics and Figure 17: Reset, power-down and power-up AC waveforms - control pins low, for more details. 2.8 Latch Enable (L) The bus interface can be configured to latch the address inputs on the rising edge of Latch Enable, L, for asynchronous latch enable controlled read or write or synchronous burst read operations. In synchronous burst read operations the address is latched on the active edge of the Clock when Latch Enable is Low, VIL. Once latched, the addresses may change without affecting the address used by the memory. When Latch Enable is Low, VIL, the latch is transparent. Latch Enable, L, can remain at VIL for asynchronous random read and write operations. 15/70 Signal descriptions 2.9 M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Burst Clock (K) The Burst Clock, K, is used to synchronize the memory with the external bus during synchronous burst read operations. Bus signals are latched on the active edge of the Clock. The Clock can be configured to have an active rising or falling edge. In synchronous burst read mode the address is latched on the first active clock edge when Latch Enable is Low, VIL, or on the rising edge of Latch Enable, whichever occurs first. During asynchronous bus operations the Clock is not used. 2.10 Burst Address Advance (B) The Burst Address Advance, B, controls the advancing of the address by the internal address counter during synchronous burst read operations. Burst Address Advance, B, is only sampled on the active clock edge of the Clock when the X-latency time has expired. If Burst Address Advance is Low, VIL, the internal address counter advances. If Burst Address Advance is High, VIH, the internal address counter does not change; the same data remains on the data inputs/outputs and Burst Address Advance is not sampled until the Y-latency expires. The Burst Address Advance, B, may be tied to VIL. 2.11 Valid Data Ready (R) The Valid Data Ready output, R, is an open drain output that can be used, during synchronous burst read operations, to identify if the memory is ready to output data or not. The Valid Data Ready output can be configured to be active on the clock edge of the invalid data read cycle or one cycle before. Valid Data Ready, at VIH, indicates that new data is or will be available. When Valid Data Ready is Low, VIL, the previous data outputs remain active. In all asynchronous operations, Valid Data Ready is high impedance. It may be tied to other components with the same Valid Data Ready signal to create a unique system Ready signal. The Valid Data Ready output has an internal pull-up resistor of around 1 M powered from VDDQ, designers should use an external pull-up resistor of the correct value to meet the external timing requirements for Valid Data Ready going to VIH. 2.12 Write Protect (WP) The Write Protect, WP, provides protection against program or erase operations. When Write Protect, WP, is at VIL the first two (in the bottom configuration) or last two (in the top configuration) parameter blocks and all main blocks are locked. When Write Protect WP is at VIH all the blocks can be programmed or erased, if no other protection is used. 2.13 Supply voltage (VDD) The supply voltage, VDD, is the core power supply. All internal circuits draw their current from the VDD pin, including the program/erase controller. 16/70 M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB 2.14 Signal descriptions Output supply voltage (VDDQ) The output supply voltage, VDDQ, is the output buffer power supply for all operations (read, program and erase) used for DQ0-DQ31 when used as outputs. 2.15 Input supply voltage (VDDQIN) The input supply voltage, VDDIN, is the power supply for all input signal. Input signals are: K, B, L, W, GD, G, E, A0-A18 and DQ0-DQ31, when used as inputs. 2.16 Program/erase supply voltage (VPP) The program/erase supply voltage, VPP, is used for program and erase operations. The memory normally executes program and erase operations at VPP1 voltage levels. In a manufacturing environment, programming may be speeded up by applying a higher voltage level, VPPH, to the VPP pin. The voltage level VPPH may be applied for a total of 80 hours over a maximum of 1000 cycles. Stressing the device beyond these limits could damage the device. 2.17 Ground (VSS and VSSQ) The ground VSS is the reference for the internal supply voltage VDD. The ground VSSQ is the reference for the output and input supplies VDDQ, and VDDQIN. It is essential to connect VSS and VSSQ together. Note: A 0.1 F capacitor should be connected between the supply voltages, VDD, VDDQ and VDDIN and the grounds, VSS and VSSQ to decouple the current surges from the power supply. The PCB track widths must be sufficient to carry the currents required during all operations of the parts, see Table 15: DC characteristics, for maximum current supply requirements. 2.18 Don't use (DU) This pin should not be used as it is internally connected. Its voltage level can be between VSS and VDDQ or leave it unconnected. 2.19 Not connected (NC) This pin is not physically connected to the device. 17/70 Bus operations 3 M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Bus operations Each bus operation that controls the memory is described in this section, see Table 4, Table 5 and Table 6 Bus operations, for a summary. The bus operation is selected through the burst configuration register; the bits in this register are described at the end of this section. On power-up or after a hardware reset the memory defaults to asynchronous bus read and asynchronous bus write, no other bus operation can be performed until the burst control register has been configured. The electronic signature, CFI or status register will be read in asynchronous mode regardless of the burst control register settings. Typically glitches of less than 5 ns on Chip Enable or Write Enable are ignored by the memory and do not affect bus operations. 3.1 Asynchronous bus operations For asynchronous bus operations refer to Table 4 together with the following text. 3.1.1 Asynchronous bus read Asynchronous bus read operations read from the memory cells, or specific registers (electronic signature, status register, CFI and burst configuration register) in the command interface. A valid bus operation involves setting the desired address on the address inputs, applying a Low signal, VIL, to Chip Enable and Output Enable and keeping Write Enable and Output Disable High, VIH. The data inputs/outputs will output the value, see Figure 8: Asynchronous bus read AC waveforms, and Table 16: Asynchronous bus read AC characteristics, for details of when the output becomes valid. Asynchronous read is the default read mode which the device enters on power-up or on return from reset/power-down. 3.1.2 Asynchronous latch controlled bus read Asynchronous latch controlled bus read operations read from the memory cells or specific registers in the command interface. The address is latched in the memory before the value is output on the data bus, allowing the address to change during the cycle without affecting the address that the memory uses. A valid bus operation involves setting the desired address on the address inputs, setting Chip Enable and Latch Enable Low, VIL and keeping Write Enable High, VIH; the address is latched on the rising edge of Latch Enable. Once latched, the address inputs can change. Set Output Enable Low, VIL, to read the data on the data inputs/outputs; see Figure 9: Asynchronous latch controlled bus read AC waveforms, and Table 17: Asynchronous latch controlled bus read AC characteristics, for details on when the output becomes valid. Note that, since the Latch Enable input is transparent when set Low, VIL, asynchronous bus read operations can be performed when the memory is configured for asynchronous latch enable bus operations by holding Latch Enable Low, VIL throughout the bus operation. 18/70 M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB 3.1.3 Bus operations Asynchronous page read Asynchronous page read operations are used to read from several addresses within the same memory page. Each memory page is 4 double-words and is addressed by the address inputs A0 and A1. Data is read internally and stored in the page buffer. Valid bus operations are the same as asynchronous bus read operations but with different timings. The first read operation within the page has identical timings, subsequent reads within the same page have much shorter access times. If the page changes then the normal, longer timings apply again. Page read does not support latched controlled read. See Figure 10: Asynchronous page read AC waveforms, and Table 18: Asynchronous page read AC characteristics, for details on when the outputs become valid. 3.1.4 Asynchronous bus write Asynchronous bus write operations write to the command interface to send commands to the memory or to latch addresses and input data to program. Bus write operations are asynchronous, the clock, K, is don't care during bus write operations. A valid asynchronous bus write operation begins by setting the desired address on the address inputs, and setting Chip Enable, Write Enable and Latch Enable Low, VIL, and Output Enable High, VIH, or Output Disable Low, VIL. The address inputs are latched by the command interface on the rising edge of Chip Enable or Write Enable, whichever occurs first. Commands and input data are latched on the rising edge of Chip Enable, E, or Write Enable, W, whichever occurs first. Output Enable must remain High, and Output Disable Low, during the whole asynchronous bus write operation. See Figure 11: Asynchronous write AC waveforms, and Table 19: Asynchronous write and latch controlled write AC characteristics, for details of the timing requirements. 3.1.5 Asynchronous latch controlled bus write Asynchronous latch controlled bus write operations write to the command interface to send commands to the memory or to latch addresses and input data to program. Bus write operations are asynchronous, the clock, K, is don't care during bus write operations. A valid asynchronous latch controlled bus write operation begins by setting the desired address on the address inputs and pulsing Latch Enable Low, VIL. The address inputs are latched by the command interface on the rising edge of Latch Enable, Write Enable or Chip Enable, whichever occurs first. Commands and input data are latched on the rising edge of Chip Enable, E, or Write Enable, W, whichever occurs first. Output Enable must remain High, and Output Disable Low, during the whole asynchronous bus write operation. See Figure 12: Asynchronous latch controlled write AC waveforms, and Table 19: Asynchronous write and latch controlled write AC characteristics, for details of the timing requirements. 3.1.6 Output Disable The data outputs are high impedance when the Output Enable, G, is at VIH or Output Disable, GD, is at VIL. 19/70 Bus operations 3.1.7 M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Standby mode When Chip Enable is High, VIH, and the Program/Erase controller is idle, the memory enters Standby mode, the power consumption is reduced to the standby level and the Data inputs/outputs pins are placed in the high impedance state regardless of Output Enable, Write Enable or Output Disable inputs. 3.1.8 Automatic low power mode If there is no change in the state of the bus for a short period of time during asynchronous bus read operations the memory enters auto low power mode where the internal supply current is reduced to the auto-standby supply current. The data inputs/outputs will still output data if a bus read operation is in progress. Automatic low power is only available in asynchronous read modes. 3.1.9 Power-down mode The memory is in power-down when Reset/Power-down, RP, is at VIL. The power consumption is reduced to the power-down level and the outputs are high impedance, independent of the Chip Enable, E, Output Enable, G, Output Disable, GD, or Write Enable, W, inputs. 3.1.10 Electronic signature Two codes identifying the manufacturer and the device can be read from the memory allowing programming equipment or applications to automatically match their interface to the characteristics of the memory. The electronic signature is output by giving the Read Electronic Signature command. The manufacturer code is output when all the address inputs are at VIL. The device code is output when A1 is at VIH and all the other address pins are at VIL (see Table 5: Asynchronous read electronic signature operation). Issue a Read Memory Array command to return to read mode. Table 4. Asynchronous bus operations(1) Bus operation Step E G GD W RP L VIL VIL VIH VIH VIH VIL Address Data output Address Latch VIL VIH VIH VIL VIH VIL Address High-Z Read VIL VIL VIH VIH VIH VIH X Data output Asynchronous page read VIL VIL VIH VIH VIH X Asynchronous bus write VIL VIH X VIL VIH VIL Address Data input Address Latch VIL VIL VIH VIH VIH VIL Address High-Z Write VIL VIH X VIL VIH VIH X Data input Output Enable, G VIL VIH VIH VIH VIH X X High-Z Output Disable, GD VIL VIL VIL VIH VIH X X High-Z Standby VIH X X X VIH X X High-Z X X X X VIL X X High-Z Asynchronous bus read Asynchronous latch controlled bus read Asynchronous latch controlled bus write Reset/power-down 1. X = don't care. 20/70 A0-A18 DQ0-DQ31 Address Data output M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Table 5. Bus operations Asynchronous read electronic signature operation Code Device E G GD W A18-A0 DQ31-DQ0 Manufacturer All VIL VIL VIH VIH 00000h 00000020h M58BW016DT M58BW016FT VIL VIL VIH VIH 00001h 00008836h M58BW016DB M58BW016FB VIL VIL VIH VIH 00001h 00008835h VIL VIL VIH VIH 00005h BCR(1) Device Burst configuration register 1. BCR = Burst configuration register. 3.2 Synchronous bus operations For synchronous bus operations refer to Table 6 together with the following text. 3.2.1 Synchronous burst read Synchronous burst read operations are used to read from the memory at specific times synchronized to an external reference clock. In the M58BW016FT and M58BW016FB only, once the memory is configured in burst mode, it is mandatory to have an active clock signal since the switching of the output buffer data bus is synchronized to the active edge of the clock. In the absence of clock, no data is output. Caution: The M58BW016DT and M58BW016DB are not concerned by the paragraph above. The burst type, length and latency can be configured. The different configurations for synchronous burst read operations are described in Section 3.3: Burst configuration register. Refer to Figure 4 and Figure 5 for examples of synchronous burst operations. In continuous burst read, one burst read operation can access the entire memory sequentially by keeping the Burst Address Advance B at VIL for the appropriate number of clock cycles. At the end of the memory address space the burst read restarts from the beginning at address 000000h. A valid synchronous burst read operation begins when the Burst Clock is active and Chip Enable and Latch Enable are Low, VIL. The burst start address is latched and loaded into the internal burst address counter on the valid Burst Clock K edge (rising or falling depending on the value of M6) or on the rising edge of Latch Enable, whichever occurs first. After an initial memory latency time, the memory outputs data each clock cycle (or two clock cycles depending on the value of M9). The Burst Address Advance B input controls the memory burst output. The second burst output is on the next clock valid edge after the Burst Address Advance B has been pulled Low. Valid Data Ready, R, monitors if the memory burst boundary is exceeded and the burst controller of the microprocessor needs to insert wait states. When Valid Data Ready is Low on the active clock edge, no new data is available and the memory does not increment the internal address counter at the active clock edge even if Burst Address Advance, B, is Low. 21/70 Bus operations M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Valid Data Ready may be configured (by bit M8 of burst configuration register) to be valid immediately at the valid clock edge or one data cycle before the valid clock edge. Synchronous burst read will be suspended if Burst Address Advance, B, goes High, VIH. If Output Enable is at VIL and Output Disable is at VIH, the last data is still valid. If Output Enable, G, is at VIH or Output Disable, GD, is at VIL, but the Burst Address Advance, B, is at VIL the internal Burst Address counter is incremented at each Burst Clock K valid edge. The synchronous burst read timing diagrams and AC characteristics are described in the AC and DC parameters section. See Figure 13, Figure 14, Figure 15 and Figure 16, and Table 20. 3.2.2 Synchronous burst read suspend During a synchronous burst read operation it is possible to suspend the operation, freeing the data bus for other higher priority devices. A valid synchronous burst read operation is suspended when both Output Enable and Burst Address Advance are High, VIH. The Burst Address Advance going High, VIH, stops the burst counter and the Output Enable going High, VIH, inhibits the data outputs. The synchronous burst read operation can be resumed by setting Output Enable Low. Table 6. Synchronous burst read bus operations(1)(2) Bus operation Synchronous burst read Step L B A0-A18 DQ0-DQ31 T VIL X Address input VIH T VIH VIL Data output X VIH X VIH VIH High-Z VIL VIH VIH T VIH VIL Data output VIL VIH X VIH T VIH VIL High-Z VIH X X VIH X X X High-Z X X X VIL X X X High-Z RP K(3) E G GD Address Latch VIL VIH X VIH Read VIL VIL VIH Read Suspend VIL VIH Read Resume VIL Burst Address Advance Read Abort, E Read Abort, RP 1. X = don't care, VIL or VIH. 2. M15 = 0, bit M15 is in the burst configuration register. 3. T = transition, see M6 in the burst configuration register for details on the active edge of K. 22/70 M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB 3.3 Bus operations Burst configuration register The burst configuration register is used to configure the type of bus access that the memory will perform. The burst configuration register is set through the command interface and will retain its information until it is re-configured, the device is reset, or the device goes into reset/powerdown mode. The burst configuration register bits are described in Table 7. They specify the selection of the burst length, burst type, burst X and Y latencies and the read operation. Refer to Figure 4 and Figure 5 for examples of synchronous burst configurations. 3.3.1 Read select bit (M15) The read select bit, M15, is used to switch between asynchronous and synchronous bus read operations. When the read select bit is set to '1', bus read operations are asynchronous; when the read select bit is set to '0', bus read operations are synchronous. On reset or power-up the read select bit is set to'1' for asynchronous accesses. 3.3.2 X-Latency bits (M14-M11) The X-Latency bits are used during synchronous bus read operations to set the number of clock cycles between the address being latched and the first data becoming available. For correct operation the X-Latency bits can only assume the values in Table 7: Burst configuration register. The X-Latency bits should also be selected in conjunction with Table 8: Burst type definition to ensure valid settings. 3.3.3 Y-Latency bit (M9) The Y-Latency bit is used during synchronous bus read operations to set the number of clock cycles between consecutive reads. The Y-Latency value depends on both the XLatency value and the setting in M9. When the Y-Latency is `1' the data changes each clock cycle; when the Y-Latency is `2' the data changes every second clock cycle. See Table 7: Burst configuration register, and Table 8: Burst type definition for valid combinations of the Y-Latency, the X-Latency and the clock frequency. 3.3.4 Valid data ready bit (M8) The valid data ready bit controls the timing of the valid data ready output pin, R. When the valid data ready bit is '0' the valid data ready output pin is driven Low for the active clock edge when invalid data is output on the bus. When the valid data ready bit is '1' the valid data ready output pin is driven Low one clock cycle prior to invalid data being output on the bus. 3.3.5 Burst type bit (M7) The burst type bit is used to configure the sequence of addresses read as sequential or interleaved. When the burst type bit is '0' the memory outputs from interleaved addresses; when the burst type bit is '1' the memory outputs from sequential addresses. See Table 8: Burst type definition, for the sequence of addresses output from a given starting address in each mode. 23/70 Bus operations 3.3.6 M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Valid clock edge bit (M6) The valid clock edge bit, M6, is used to configure the active edge of the Clock, K, during synchronous burst read operations. When the valid clock edge bit is '0' the falling edge of the clock is the active edge; when the valid clock edge bit is '1' the rising edge of the clock is active. 3.3.7 Wrap burst bit (M3) The burst reads can be confined inside the 4 or 8 double-word boundary (wrap) or overcome the boundary (no wrap). The wrap burst bit is used to select between wrap and no wrap. When the wrap burst bit is set to `0' the burst read wraps; when it is set to `1' the burst read does not wrap. 3.3.8 Burst length bit (M2-M0) The burst length bits set the maximum number of double-words that can be output during a synchronous burst read operation before the address wraps. Burst lengths of 4 or 8 are available for both the sequential and interleaved burst types, and a continuous burst is available for the sequential type. Table 7: Burst configuration register gives the valid combinations of the burst length bits that the memory accepts; Table 8: Burst type definition, gives the sequence of addresses output from a given starting address for each length. If either a continuous or a no wrap burst read has been initiated the device will output data synchronously. Depending on the starting address, the device activates the valid data ready output to indicate that a delay is necessary before the data is output. If the starting address is aligned to an 8 double-word boundary, the continuous burst mode will run without activating the valid data ready output. If the starting address is not aligned to an 8 doubleword boundary, valid data ready is activated to indicate that the device needs an internal delay to read the successive words in the array. M10, M5 and M4 are reserved for future use. 24/70 M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Table 7. Burst configuration register Bit Description M15 Read select M14 M13-M11 X-Latency(1) M10 M9 Y-Latency(4) M8 Valid data ready M7 M6 Burst type Valid clock edge M5-M4 M3 M2-M0 Bus operations Wrapping Burst length Value Description 0 Synchronous burst read 1 Asynchronous read (default at power-on) 0 Reserved (default value) 000 Reserved (default value) 001 Reserved 010 4, 4-1-1-1(2) 011 5(3), 5-1-1-1, 5-2-2-2 100 6(3), 6-1-1-1, 6-2-2-2 101 7(3), 7-1-1-1, 7-2-2-2 110 8(3), 8-1-1-1, 8-2-2-2 111 Reserved 0 Reserved (default value) 0 One burst clock cycle (default value) 1 Two burst clock cycles 0 R valid Low during valid burst clock edge (default value) 1 R valid Low 1 data cycle before valid burst clock edge 0 Interleaved (default value) 1 Sequential 0 Falling burst clock edge (default value) 1 Rising burst clock edge 00 Reserved (default value) 01 Reserved 10 Reserved 11 Reserved 0 Wrap (default value) 1 No wrap 000 Reserved (default value) 001 4 double-words 010 8 double-words 011 Reserved 100 Reserved 101 Reserved 110 Reserved 111 Continuous 1. X latencies can be calculated as: (tAVQV - tLLKH + tQVKH) + tSYSTEM MARGIN < (X -1) tK. (X is an integer number from 4 to 8, tK is the clock period and tSYSTEM MARGIN is the time margin required for the calculation). 2. This feature is available for the M58BW016F version up to the full operative frequency of 56 MHz, and for the M58BW016D version only if the operative frequency is below 45 MHz. 3. The M58BW016F version has a maximum operative frequency of 66 MHz, fully factory tested. 4. Y latencies can be calculated as: tKHQV + tSYSTEM MARGIN + tQVKH < Y tK. 25/70 Bus operations Table 8. M3 M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Burst type definition Starting x4 x4 address sequential interleaved x8 sequential x8 interleaved Continuous 0 0 0-1-2-3 0-1-2-3 0-1-2-3-4-5-6-7 0-1-2-3-4-5-6-7 0-1-2-3-4-5-6-7-8-9-10.. 0 1 1-2-3-0 1-0-3-2 1-2-3-4-5-6-7-0 1-0-3-2-5-4-7-6 1-2-3-4-5-6-7-8-9-10-11.. 0 2 2-3-0-1 2-3-0-1 2-3-4-5-6-7-0-1 2-3-0-1-6-7-4-5 2-3-4-5-6-7-8-9-10-11-12.. 0 3 3-0-1-2 3-2-1-0 3-4-5-6-7-0-1-2 3-2-1-0-7-6-5-4 3-4-5-6-7-8-9-10-11-12-13.. 0 4 - - 4-5-6-7-0-1-2-3 4-5-6-7-0-1-2-3 4-5-6-7-8-9-10-11-2-13-14.. 0 5 - - 5-6-7-0-1-2-3-4 5-4-7-6-1-0-3-2 5-6-7-8-9-10-11-12-13-14.. 0 6 - - 6-7-0-1-2-3-4-5 6-7-4-5-2-3-0-1 6-7-8-9-10-11-12-13-14-15.. 0 7 - - 7-0-1-2-3-4-5-6 7-6-5-4-3-2-1-0 7-8-9-10-11-12-13-14-15-16.. 0 8 - - - - 8-9-10-11-12-13-14-15-16-17.. 1 0 0-1-2-3 - 0-1-2-3-4-5-6-7 - 0-1-2-3-4-5-6-7-8-9-10.. 1 1 1-2-3-4 - 1-2-3-4-5-6-7-8 - 1-2-3-4-5-6-7-8-9-10-11.. 1 2 2-3-4-5 - 2-3-4-5-6-7-8-9 - 2-3-4-5-6-7-8-9-10-11-12.. 1 3 3-4-5-6 - 3-4-5-6-7-8-9-10 - 3-4-5-6-7-8-9-10-11-12-13.. 1 4 4-5-6-7 - 4-5-6-7-8-9-10-11 - 4-5-6-7-8-9-10-11-12-13-14.. 1 5 5-6-7-8 - 5-6-7-8-9-10-11-12 - 5-6-7-8-9-10-11-12-13-14.. 1 6 6-7-8-9 - 6-7-8-9-10-11-12-13 - 6-7-8-9-10-11-12-13-14-15.. 1 7 7-8-9-10 - 7-8-9-10-11-12-13-14 - 7-8-9-10-11-12-13-14-15-16.. 1 8 8-9-10-11 - 8-9-10-11-12-13-14-15 - 8-9-10-11-12-13-14-15-16-17.. 26/70 M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Figure 4. Bus operations Example burst configuration X-1-1-1 0 1 2 3 4 5 6 7 8 9 K ADD VALID L DQ VALID 4-1-1-1 DQ DQ DQ DQ 5-1-1-1 VALID VALID VALID VALID VALID VALID VALID VALID VALID VALID VALID VALID VALID VALID VALID VALID VALID VALID VALID 6-1-1-1 7-1-1-1 8-1-1-1 AI03841 Figure 5. Example burst configuration X-2-2-2 0 1 2 3 4 5 6 7 8 9 K ADD VALID L DQ DQ DQ DQ NV 5-2-2-2 6-2-2-2 VALID NV VALID NV VALID NV VALID NV VALID NV NV VALID NV VALID NV VALID NV 7-2-2-2 8-2-2-2 NV=NOT VALID AI04406b 27/70 Command interface 4 M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Command interface All bus write operations to the memory are interpreted by the command interface. Commands consist of one or more sequential bus write operations. The commands are summarized in Table 9: Commands. Refer to Table 9 in conjunction with the text descriptions below. 4.1 Read Memory Array command The Read Memory Array command returns the memory to read mode. One bus write cycle is required to issue the Read Memory Array command and return the memory to read mode. Subsequent read operations will output the addressed memory array data. Once the command is issued the memory remains in read mode until another command is issued. From read mode bus read commands will access the memory array. 4.2 Read Electronic Signature command The Read Electronic Signature command is used to read the manufacturer code, the device code or the burst configuration register. One bus write cycle is required to issue the Read Electronic Signature command. Once the command is issued subsequent bus read operations, depending on the address specified, read the manufacturer code, the device code or the burst configuration register until another command is issued; see Table 5: Asynchronous read electronic signature operation. 4.3 Read Query command The Read Query command is used to read data from the common Flash interface (CFI) memory area. One bus write cycle is required to issue the Read Query command. Once the command is issued subsequent bus read operations, depending on the address specified, read from the common Flash interface memory area. See Appendix A: Common Flash interface (CFI), Table 26, Table 27, Table 28, Table 29 and Table 30 for details on the information contained in the common Flash interface (CFI) memory area. 28/70 M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB 4.4 Command interface Read Status Register command The Read Status Register command is used to read the status register. One bus write cycle is required to issue the Read Status Register command. Once the command is issued subsequent bus read operations read the status register until another command is issued. The status register information is present on the output data bus (DQ1-DQ7) when Chip Enable E and Output Enable G are at VIL and Output Disable is at VIH. An interactive update of the status register bits is possible by toggling Output Enable or Output Disable. It is also possible during a program or erase operation, by deactivating the device with Chip Enable at VIH and then reactivating it with Chip Enable and Output Enable at VIL and Output Disable at VIH. The content of the status register may also be read at the completion of a program, erase or suspend operation. During a Block Erase or Program command, DQ7 indicates the program/erase controller status. It is valid until the operation is completed or suspended. See the section on the status register and Table 11 for details on the definitions of the status register bits. 4.5 Clear Status Register command The Clear Status Register command can be used to reset bits 1, 3, 4 and 5 in the status register to `0'. One bus write is required to issue the Clear Status Register command. Once the command is issued the memory returns to its previous mode, subsequent bus read operations continue to output the same data. The bits in the status register are sticky and do not automatically return to `0' when a new Program or Erase command is issued. If any error occurs then it is essential to clear any error bits in the status register by issuing the Clear Status Register command before attempting a new Program, Erase or Resume command. 29/70 Command interface 4.6 M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Block Erase command The Block Erase command can be used to erase a block. It sets all of the bits in the block to `1'. All previous data in the block is lost. If the block is protected then the erase operation will abort, the data in the block will not be changed and the status register will output the error. Two bus write operations are required to issue the command; the first write cycle sets up the Block Erase command, the second write cycle confirms the Block Erase command and latches the block address in the program/erase controller and starts it. The sequence is aborted if the Confirm command is not given and the device will output the status register data with bits 4 and 5 set to '1'. Once the command is issued subsequent bus read operations read the status register. See the section on the status register for details on the definitions of the status register bits. During the erase operation the memory will only accept the Read Status Register command and the Program/Erase Suspend command. All other commands will be ignored. The command can be executed using either VDD (for a normal erase operation) or VPP (for a fast erase operation). If VPP is in the VPPH range when the command is issued then a fast erase operation will be executed, otherwise the operation will use VDD. If VPP goes below the VPP lockout voltage, VPPLK, during a fast erase the operation aborts, the status register VPP status bit is set to `1' and the command must be re-issued. Typical erase times are given in Table 10. See Appendix B: Flowcharts, Figure 24: Block erase flowchart and pseudocode, for a suggested flowchart on using the Block Erase command. 4.7 Program command The Program command is used to program the memory array. Two bus write operations are required to issue the command; the first write cycle sets up the Program command, the second write cycle latches the address and data to be programmed in the program/erase controller and starts it. A program operation can be aborted by writing FFFFFFFFh to any address after the program set-up command has been given. Once the command is issued subsequent bus read operations read the status register. See the section on the status register for details on the definitions of the status register bits. During the program operation the memory will only accept the Read Status Register command and the Program/Erase Suspend command. All other commands will be ignored. If Reset/Power-down, RP, falls to VIL during programming the operation will be aborted. The command can be executed using either VDD (for a normal program operation) or VPP (for a fast program operation). If VPP is in the VPPH range when the command is issued then a fast program operation will be executed, otherwise the operation will use VDD. If VPP goes below the VPP lockout voltage, VPPLK, during a fast program the operation aborts and the status register VPP status bit is set to `1'. As data integrity cannot be guaranteed when the program operation is aborted, the memory block must be erased and reprogrammed. See Appendix B: Flowcharts on page 59, Figure 22: Program flowchart and pseudocode, for a suggested flowchart on using the Program command. 30/70 M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB 4.8 Command interface Program/Erase Suspend command The Program/Erase Suspend command is used to pause a program or erase operation. The command will only be accepted during a program or erase operation. It can be issued at any time during a program or erase operation. The command is ignored if the device is already in suspend mode. One bus write cycle is required to issue the Program/Erase Suspend command and pause the program/erase controller. Once the command is issued it is necessary to poll the program/erase controller status bit (bit 7) to find out when the program/erase controller has paused; no other commands will be accepted until the program/erase controller has paused. After the program/erase controller has paused, the memory will continue to output the status register until another command is issued. During the polling period between issuing the Program/Erase Suspend command and the program/erase controller pausing it is possible for the operation to complete. Once the program/erase controller status bit (bit 7) indicates that the program/erase controller is no longer active, the program suspend status bit (bit 2) or the erase suspend status bit (bit 6) can be used to determine if the operation has completed or is suspended. For timing on the delay between issuing the Program/Erase Suspend command and the program/erase controller pausing see Table 10. During Program/Erase Suspend the Read Memory Array, Read Status Register, Read Electronic Signature, Read Query and Program/Erase Resume commands will be accepted by the command interface. Additionally, if the suspended operation was erase then the Program and the Program Suspend commands will also be accepted. When a program operation is completed inside a Block Erase Suspend the Read Memory Array command must be issued to reset the device in read mode, then the Erase Resume command can be issued to complete the whole sequence. Only the blocks not being erased may be read or programmed correctly. See Appendix B: Flowcharts, Figure 23: Program suspend & resume flowchart and pseudocode, and Figure 25: Erase suspend & resume flowchart and pseudocode, for suggested flowcharts on using the Program/Erase Suspend command. 4.9 Program/Erase Resume command The Program/Erase Resume command can be used to restart the program/erase controller after a program/erase suspend operation has paused it. One bus write cycle is required to issue the Program/Erase Resume command. See Appendix B: Flowcharts, Figure 23: Program suspend & resume flowchart and pseudocode, and Figure 25: Erase suspend & resume flowchart and pseudocode, for suggested flowcharts on using the Program/Erase Resume command. 31/70 Command interface 4.10 M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Set Burst Configuration Register command The Set Burst Configuration Register command is used to write a new value to the burst configuration control register which defines the burst length, type, X and Y latencies, synchronous/asynchronous read mode and the valid clock edge configuration. Two bus write cycles are required to issue the Set Burst Configuration Register command. The first cycle writes the setup command and the address corresponding to the set burst configuration register content. The second cycle writes the burst configuration register data and the confirm command. Once the command is issued the memory returns to read mode as if a Read Memory Array command had been issued. The value for the burst configuration register is always presented on A0-A15. M0 is on A0, M1 on A1, etc.; the other address bits are ignored. Commands(1) Table 9. Command Cycles Bus operations 1st cycle 2nd cycle Op. Addr. Data Op. Addr. Data Read Memory Array 2 Write X FFh Read RA RD Read Electronic Signature (manufacturer code) 2 Write X 90h Read 00000h 20h Read Electronic Signature (device code) 2 Write X 90h Read 00001h IDh Read Electronic Signature (burst configuration register) 2 Write X 90h Read 00005h BCRh 2 Write X 70h Read X SRDh 2 Write X 98h Read QAh QDh Clear Status Register 1 Write X 50h Block Erase 2 Write X 20h Write BAh D0h Program 2 Write X 40h 10h Write PA PD Program/Erase Suspend 1 Write X B0h Program/Erase Resume 1 Write X D0h Set Burst Configuration Register 2 Write X 60h Write BCRh 03h Read Status Register Read Query 1. X = Don't care; RA = Read Address, RD = Read Data, ID = Device Code, SRD = Status Register Data, PA = Program Address; PD = Program Data, QA = Query Address, QD = Query Data, BA = Any address in the Block, BCR = Burst Configuration Register value. 32/70 M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Table 10. Command interface Program, erase times and program, erase endurance cycles(1) M58BW016 Parameters Typ Max Unit Min VPP = VDD VPP = 12 V VPP = VDD VPP = 12 V Parameter Block (64 Kbits) Program 0.030 0.016 0.060 0.032 s Main Block (512 Kbits) Program 0.23 0.13 0.46 0.26 s Parameter Block Erase 0.8 0.64 1.8 1.5 s Main Block Erase 1.5 0.9 3 1.8 s Program Suspend Latency time 3 10 s Erase Suspend Latency time 10 30 s Program/Erase cycles (per block) 100,000 cycles 1. TA = -40 to 125 C, VDD = 2.7 V to 3.6 V, VDDQ = 2.4 V to VDD. 33/70 Status register 5 M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Status register The Status register provides information on the current or previous program or erase operation. The various bits in the status register convey information and errors on the operation. They are output on DQ7-DQ0. To read the status register the Read Status Register command can be issued. The status register is automatically read after Program, Erase or Program/Erase Resume commands. The status register can be read from any address. The contents of the status register can be updated during an erase or program operation by toggling the Output Enable or Output Disable pins or by deactivating (Chip Enable, VIH) and then reactivating (Chip Enable and Output Enable, VIL, and Output Disable, VIH.) the device. The status register bits are summarized in Table 11: Status register bits. Refer to Table 11 in conjunction with the following text descriptions. 5.1 Program/erase controller status (bit 7) The Program/erase controller status bit indicates whether the program/erase controller is active or inactive. When the program/erase controller status bit is set to `0', the program/erase controller is active; when bit7 is set to `1', the program/erase controller is inactive. The program/erase controller status is set to `0' immediately after a Program/Erase Suspend command is issued until the program/erase controller pauses. After the program/erase controller pauses the bit is set to `1'. During program and erase operations the program/erase controller status bit can be polled to find the end of the operation. The other bits in the status register should not be tested until the program/erase controller completes the operation and the bit is set to `1'. After the program/erase controller completes its operation the erase status (bit5), program status bits should be tested for errors. 5.2 Erase suspend status (bit 6) The erase suspend status bit indicates that an erase operation has been suspended and is waiting to be resumed. The erase suspend status should only be considered valid when the program/erase controller status bit is set to `1' (program/erase controller inactive); after a Program/Erase Suspend command is issued the memory may still complete the operation rather than entering the suspend mode. When the erase suspend status bit is set to `0', the program/erase controller is active or has completed its operation; when the bit is set to `1', a Program/Erase Suspend command has been issued and the memory is waiting for a Program/Erase Resume command. When a Program/Erase Resume command is issued the erase suspend status bit returns to `0'. 34/70 M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB 5.3 Status register Erase status (bit 5) The erase status bit can be used to identify if the memory has failed to verify that the block has erased correctly. The erase status bit should be read once the program/erase controller status bit is High (program/erase controller inactive). When the erase status bit is set to `0', the memory has successfully verified that the block has erased correctly. When the erase status bit is set to `1', the program/erase controller has applied the maximum number of pulses to the block and still failed to verify that the block has erased correctly. Once set to `1', the erase status bit can only be reset to `0' by a Clear Status Register command or a hardware reset. If set to `1' it should be reset before a new Program or Erase command is issued, otherwise the new command will appear to fail. 5.4 Program status (bit 4) The program status bit is used to identify a program failure. Bit4 should be read once the program/erase controller status bit is High (program/erase controller inactive). When bit4 is set to `0' the memory has successfully verified that the device has programmed correctly. When bit4 is set to `1' the device has failed to verify that the data has been programmed correctly. Once set to 1', the program status bit can only be reset to `0' by a Clear Status Register command or a hardware reset. If set to `1' it should be reset before a new Program or Erase command is issued, otherwise the new command will appear to fail. 5.5 VPP status (bit 3) The VPP status bit can be used to identify an invalid voltage on the VPP pin during fast program and erase operations. The VPP pin is only sampled at the beginning of a program or erase operation. Indeterminate results can occur if VPP becomes invalid during a fast program or erase operation. When the VPP status bit is set to `0', the voltage on the VPP pin was sampled at a valid voltage; when the VPP status bit is set to `1', the VPP pin has a voltage that is below the VPP lockout voltage, VPPLK. Once set to `1', the VPP status bit can only be reset to `0' by a Clear Status Register command or a hardware reset. If set to `1' it should be reset before a new Program or Erase command is issued, otherwise the new command will appear to fail. 35/70 Status register 5.6 M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Program suspend status (bit 2) The program suspend status bit indicates that a program operation has been suspended and is waiting to be resumed. The program suspend status should only be considered valid when the program/erase controller status bit is set to `1' (program/erase controller inactive); after a Program/Erase Suspend command is issued the memory may still complete the operation rather than entering the suspend mode. When the program suspend status bit is set to `0', the program/erase controller is active or has completed its operation; when the bit is set to `1', a Program/Erase Suspend command has been issued and the memory is waiting for a Program/Erase Resume command. When a Program/Erase Resume command is issued the program suspend status bit returns to `0'. 5.7 Block protection status (bit 1) The block protection status bit can be used to identify if a program or erase operation has tried to modify the contents of a protected block. When the block protection status bit is set to `0', no program or erase operations have been attempted to protected blocks since the last Clear Status Register command or hardware reset; when the block protection status bit is set to `1', a program or erase operation has been attempted on a protected block. Once set to `1', the block protection status bit can only be reset Low by a Clear Status Register command or a hardware reset. If set to `1' it should be reset before a new Program or Erase command is issued, otherwise the new command will appear to fail. All others bits are reserved. Table 11. Status register bits Bit Name 7 Program/erase controller status 6 Erase suspend status 5 Erase status 4 Program status, 3 2 1 VPP status Program suspend status Erase/program in a protected block Other bits reserved 36/70 Logic level Definition '1' Ready '0' Busy '1' Suspended '0' In progress or completed '1' Erase error '0' Erase success '1' Program error '0' Program success '1' VPP invalid, abort '0' VPP OK '1' Suspended '0' In progress or completed '1' Program/erase on protected block, abort '0' No operations to protected sectors M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB 6 Maximum ratings Maximum ratings Stressing the device above the ratings listed in Table 12: Absolute maximum ratings, may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Refer also to the Numonyx SURE Program and other relevant quality documents. Table 12. Absolute maximum ratings Value Symbol Parameter Unit Min Max TBIAS Temperature under bias -40 125 C TSTG Storage temperature -55 155 C Input or output voltage -0.6 VDDQ + 0.6 VDDQIN + 0.6 V Supply voltage -0.6 4.2 V VIO VDD, VDDQ, VDDQIN VPP Program voltage -0.6 13.5 (1) V 1. Cumulative time at a high voltage level of 13.5 V should not exceed 80 hours on VPP pin. 37/70 DC and AC parameters 7 M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB DC and AC parameters This section summarizes the operating and measurement conditions, and the DC and AC characteristics of the device. The parameters in the DC and AC characteristics tables that follow, are derived from tests performed under the measurement conditions summarized in Table 13: Operating and AC measurement conditions. Designers should check that the operating conditions in their circuit match the measurement conditions when relying on the quoted parameters. Table 13. Operating and AC measurement conditions Value Parameter Units Min Max Supply voltage (VDD) 2.7 3.6 V Input/output supply voltage (VDDQ) 2.4 VDD V Grade 6 -40 90 C Grade 3 -40 125 C Ambient temperature (TA) Load capacitance (CL) 30 Clock rise and fall times 4 ns Input rise and fall times 4 ns Input pulses voltages Input and output timing ref. voltages Figure 6. 0 to VDDQ V VDDQ/2 V AC measurement input/output waveform VDDQ VDDQIN VDDQ/2 VDDQIN/2 0V AI04153 1. VDD = VDDQ. 38/70 pF M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Figure 7. DC and AC parameters AC measurement load circuit 1.3 V 1N914 3.3 k DEVICE UNDER TEST OUT CL CL includes JIG capacitance Table 14. Symbol CIN COUT AI04154 Device capacitance(1)(2) Parameter Input capacitance Output capacitance Test condition Typ Max Unit VIN = 0 V 6 8 pF VOUT = 0 V 8 12 pF 1. TA = 25 C, f = 1 MHz. 2. Sampled only, not 100% tested. 39/70 DC and AC parameters Table 15. Symbol M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB DC characteristics Parameter Test condition Min Max Unit 1 A A ILI Input Leakage current 0 V VIN VDDQ ILO Output Leakage current 0 V VOUT VDDQ 5 E = VIL, G = VIH, M58BW016DT/B fadd = 6 MHz M58BW016FT/B 20 IDD Supply current (Random Read) IDDP-UP(1) Supply current (Power-up) IDDB Supply current (Burst Read) Supply current (Standby) 25 mA applies only to M58BW016FT/B 20 mA E = VIL, G = VIH, M58BW016DT/B fclock = 40 MHz M58BW016FT/B 30 mA E = VIH E = VIL, G = VIH, M58BW016DT/B fclock = 56 MHz M58BW016FT/B E = RP = VDD M58BW016DT/B 0.2 V M58BW016FT/B 30 mA 40 mA 60 A 150 A Supply current (Auto Low-Power) E = VSS 0.2 V, RP = VDD 0.2 V 60 A IDD2 Supply current (Reset/Power-down) RP = VSS 0.2 V 60 A IDD3 Supply current (Program or Erase, Set Lock bit, Erase Lock bit) Program, Block Erase in progress 30 mA IDD4 Supply current (Erase/Program Suspend) M58BW016DT/B 40 A 150 A IPP Program current (Read or Standby) VPP VPP1 30 A IPP1 Program current (Read or Standby) VPP VPP1 30 A IPP2 Program current (Power-down) RP = VIL 5 A IPP3 Program current (Program) Program in progress IPP4 Program current (Erase) Erase in progress VIL Input Low voltage VIH IDD1 E = VIH M58BW016FT/B VPP = VPP1 200 A VPP = VPPH 20 mA VPP = VPP1 200 A VPP = VPPH 20 mA 0.2VDDQIN V Input High voltage (for DQ lines) 0.8VDDQIN VDDQ+0.3 V VIH Input High voltage (for input only lines) 0.8VDDQIN VOL Output Low voltage VOH Output High voltage CMOS VPP1 Program voltage (program or erase operations) 2.7 3.6 V VPPH Program voltage (program or erase operations) 11.4 12.6 V VLKO VDD supply voltage (erase and program lockout) 2.2 V VPPLK VPP supply voltage (erase and program lockout) 11.4 V -0.5 IOL = 100 A IOH = -100 A 3.6 V 0.1 V VDDQ-0.1 V 1. IDDP-UP is defined only during the power-up phase of the M58BW016FT/B, from the moment current is applied with RP Low to the moment when the supply voltage has become stable and RP is brought to High. 40/70 M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Figure 8. DC and AC parameters Asynchronous bus read AC waveforms tAVAV A0-A18 VALID tAVQV tEHLX tLLEL L tELQX tELQV tAXQX E tGLQX tGLQV tEHQX tEHQZ G GD tGHQX tGHQZ DQ0-DQ31 OUTPUT See also Page Read AI04407C . Table 16. Asynchronous bus read AC characteristics M58BW016 Symbol Parameter Test condition Unit 70 80 tAVAV Address Valid to Address Valid E = VIL, G = VIL Min 70 80 ns tAVQV Address Valid to Output Valid E = VIL, G = VIL Max 70 80 ns tAXQX Address Transition to Output Transition E = VIL, G = VIL Min 0 0 ns tEHLX Chip Enable High to Latch Enable Transition Min 0 0 ns tEHQX Chip Enable High to Output Transition G = VIL Min 0 0 ns tEHQZ Chip Enable High to Output Hi-Z G = VIL Max 20 20 ns tELQV(1) Chip Enable Low to Output Valid G = VIL Max 70 80 ns tELQX Chip Enable Low to Output Transition G = VIL Min 0 0 ns tGHQX Output Enable High to Output Transition E = VIL Min 0 0 ns tGHQZ Output Enable High to Output Hi-Z E = VIL Max 15 15 ns tGLQV Output Enable Low to Output Valid E = VIL Max 25 25 ns tGLQX Output Enable to Output Transition E = VIL Min 0 0 ns tLLEL Latch Enable Low to Chip Enable Low Min 0 0 ns 1. Output Enable G may be delayed up to tELQV - tGLQV after the falling edge of Chip Enable E without increasing tELQV. 41/70 DC and AC parameters Figure 9. M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Asynchronous latch controlled bus read AC waveforms A0-A18 VALID tAVLL L tLHAX tLHLL tLLLH tEHLX tELLL E tEHQX tEHQZ tGLQX tGLQV G tLLQX tLLQV tGHQX GHQZ DQ0-DQ31 OUTPUT See also Page Read AI03645 Table 17. Asynchronous latch controlled bus read AC characteristics M58BW016 Symbol 42/70 Parameter Test condition E = VIL Unit 70 80 Min 0 0 ns Min 0 0 ns tAVLL Address Valid to Latch Enable Low tEHLX Chip Enable High to Latch Enable Transition tEHQX Chip Enable High to Output Transition G = VIL Min 0 0 ns tEHQZ Chip Enable High to Output Hi-Z G = VIL Max 20 20 ns tELLL Chip Enable Low to Latch Enable Low Min 0 0 ns tGHQX Output Enable High to Output Transition E = VIL Min 0 0 ns tGHQZ Output Enable High to Output Hi-Z E = VIL Max 15 15 ns tGLQV Output Enable Low to Output Valid E = VIL Max 25 25 ns tGLQX Output Enable Low to Output Transition E = VIL Min 0 0 ns tLHAX Latch Enable High to Address Transition E = VIL Min 5 5 ns tLHLL Latch Enable High to Latch Enable Low Min 10 10 ns tLLLH Latch Enable Low to Latch Enable High Min 10 10 ns tLLQV Latch Enable Low to Output Valid E = VIL, G = VIL Max 70 80 ns tLLQX Latch Enable Low to Output Transition E = VIL, G = VIL Min 0 0 ns E = VIL M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB DC and AC parameters Figure 10. Asynchronous page read AC waveforms A0-A1 A0 and/or A1 tAVQV1 tAXQX OUTPUT + 1 OUTPUT DQ0-DQ31 AI03646 Table 18. Asynchronous page read AC characteristics(1) M58BW016 Symbol Parameter Test condition Unit 70 80 tAVQV1 Address Valid to Output Valid E = VIL, G = VIL Max 25 25 ns tAXQX E = VIL, G = VIL Min 6 6 ns Address Transition to Output Transition 1. For other timings see Table 16: Asynchronous bus read AC characteristics. 43/70 44/70 RP VPP DQ0-DQ31 W G tAVLL tWHEH INPUT tDVWH tWHDX tWHWL tWHAX tWLWH Write Cycle tELWL tAVWH VALID INPUT RP = VHH Write Cycle tPHWH tVPHWH VALID tWHQV tWHGL VALID Read Status Register RP = VDD tQVPL tQVVPL VALID SR AI03651 Figure 11. E=L A0-A18 DC and AC parameters M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Asynchronous write AC waveforms RP VPP DQ0-DQ31 W G E L A0-A18 tAVLL tLLLH tWHDX Write Cycle tWLWH tELWL tAVWH tLHAX INPUT tLLWH tELLL tAVLH VALID tDVWH tVPHWH tWHWL tWHEH tWHAX VALID Write Cycle RP = VHH INPUT tWHQV tWHGL VALID Read Status Register AI03652 RP = VDD tQVPL tQVVPL VALID SR M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB DC and AC parameters Figure 12. Asynchronous latch controlled write AC waveforms 45/70 DC and AC parameters Table 19. M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Asynchronous write and latch controlled write AC characteristics M58BW016 Symbol Parameter Test condition 80 Min 0 0 ns tAVLL Address Valid to Latch Enable Low tAVWH Address Valid to Write Enable High E = VIL Min 50 50 ns tDVWH Data Input Valid to Write Enable High E = VIL Min 50 50 ns tELLL Chip Enable Low to Latch Enable Low Min 0 0 ns tELWL Chip Enable Low to Write Enable Low Min 0 0 ns tLHAX Latch Enable High to Address Transition Min 5 5 ns tLLLH Latch Enable Low to Latch Enable High Min 10 10 ns tLLWH latch Enable Low to Write Enable High Min 50 50 ns tQVVPL Output Valid to VPP Low Min 0 0 ns Min 0 0 ns E = VIL tVPHWH VPP High to Write Enable High 46/70 Unit 70 tWHAX Write Enable High to Address Transition E = VIL Min 0 0 ns tWHDX Write Enable High to Input Transition E = VIL Min 0 0 ns tWHEH Write Enable High to Chip Enable High Min 0 0 ns tWHGL Write Enable High to Output Enable Low Min 150 150 ns tWHQV Write Enable High to Output Valid Min 175 175 ns tWHWL Write Enable High to Write Enable Low Min 20 20 ns tWLWH Write Enable Low to Write Enable High Min 60 60 ns tQVPL Output Valid to Reset/Power-down Low Min 0 0 ns E = VIL M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB DC and AC parameters OUTPUT Setup Note: n depends on Burst X-Latency. tELLL DQ0-DQ31 G E tLLKH L A0-A18 K tKHLL 0 VALID 1 tAVLL tKHLX tKHAX tAVQV tGLQV tKHQV n tQVKH n+1 n+2 tEHQX tEHQZ tGHQX tGHQZ AI04409 Figure 13. Synchronous burst read (data valid from `n' clock rising edge) 1. The M58BW016F first data output is synchronized with the clock's active edge, while the M58BW016D first data output is not synchronized with the clock's active edge. 2. In the M58BW016F devices the right access time depends on the clock frequency. 3. For further details, please refer to the section 3.2 Clock signal in burst mode in the application note AN2461. 47/70 DC and AC parameters Table 20. M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Synchronous burst read AC characteristics(1) M58BW016 Symbol Parameter Test condition tAVLL Address Valid to Latch Enable Low tBHKH Unit 70 80 E = VIL Min 0 0 ns Burst Address Advance High to Valid Clock Edge E = VIL, G = VIL, L = VIH Min 8 8 ns tBLKH Burst Address Advance Low to Valid Clock Edge E = VIL, G = VIL, L = VIH Min 8 8 ns tELLL Chip Enable Low to Latch Enable Low Min 0 0 ns tGLQV Output Enable Low to Output Valid E = VIL, L = VIH Min 25 25 ns tKHAX Valid Clock Edge to Address Transition E = VIL Min 5 5 ns tKHLL Valid Clock Edge to Latch Enable Low E = VIL Min 0 0 ns tKHLX Valid Clock Edge to Latch Enable Transition E = VIL Min 0 0 ns E = VIL, M58BW016DT/B Min Valid Clock Edge to Output Transition G = VIL, L = VIH M58BW016FT/B Min 3 3 ns tKHQX 3 3 ns M58BW016DT/B Min 6 6 ns tLLKH Latch Enable Low to Valid Clock Edge E = VIL M58BW016FT/B Min 5 5 ns tQVKH(2) Output Valid to Valid Clock Edge E = VIL, G = VIL, L = VIH Min 6 6 ns tRLKH Valid Data Ready Low to Valid Clock Edge E = VIL, G = VIL, L = VIH Min 6 6 ns tKHQV Valid Clock Edge to Output Valid E = VIL, G = VIL, L = VIH Max 11 11 ns 1. For other timings see Table 16: Asynchronous bus read AC characteristics. 2. Data output should be read on the valid clock edge. Figure 14. Synchronous burst read (data valid from `n' clock rising edge) n n+1 n+2 n+3 n+4 n+5 K tKHQV tQVKH Q0 DQ0-DQ31 Q1 Q2 Q3 Q4 Q5 tKHQX SETUP Burst Read Q0 to Q3 Note: n depends on Burst X-Latency AI04408b 1. For set up signals and timings see synchronous burst read. 48/70 M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB DC and AC parameters Figure 15. Synchronous burst read - continuous - valid data ready output K Output (1) V V V V V tRLKH R (2) AI03649 1. Valid Data Ready = Valid Low during valid clock edge. 2. V= Valid output. 3. R is an open drain output with an internal pull up resistor of 1 M. The internal timing of R follows DQ. An external resistor, typically 300 k. for a single memory on the R bus, should be used to give the data valid set up time required to recognize that valid data is available on the next valid clock edge. Figure 16. Synchronous burst read - burst address advance K ADD VALID L ADD Q0 Q1 Q2 tGLQV G tBLKH tBHKH B AI03650 49/70 DC and AC parameters M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Figure 17. Reset, power-down and power-up AC waveforms - control pins low W, G, E L tPHLL tPHWL tPHEL tPHGL tPLRZ Hi-Z Hi-Z R tPHWL tPHEL tPHGL tPHRH RP tVDHPH tPLPH VDD, VDDQ Power-up Reset AI14240 Figure 18. Reset, power-down and power-up AC waveforms - control pins toggling tWLRH tGLRH tELRH tLLRH W, G, E L tPHLL tPHWL tPHEL tPHGL Hi-Z Hi-Z R tPLRZ tPHRH tPHRH RP tVDHPH tPLPH VDD, VDDQ Power-up Reset AI14241 50/70 M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB DC and AC parameters Figure 19. Power supply slope specification Voltage VDHH VDH Time tVDH AI14230b 1. Please refer to the application note AN2601. Table 21. Power supply AC and DC characteristics Symbol Description Min VDH Minimum value of power supply VDHH Maximum value of power supply tVDH Time required from power supply to reach the VDH value Max 2.7 Table 22. Reset, power-down and power-up AC characteristics Symbol Parameter 50 Unit V 3.6 V 50000 s Min tPHEL Reset/Power-down High to Chip Enable Low 50 tPHLL Reset/Power-down High to Latch Enable Low 50 tPHQV(1) Reset/Power-down High to Output Valid Max Unit ns ns 95 ns tPHWL Reset/Power-down High to Write Enable Low 50 ns tPHGL Reset/Power-down High to Output Enable Low 50 ns tPLPH Reset/Power-down Low to Reset/Power-down High 100 ns tPHRH(1) Reset/Power-down High to Valid Data Ready High tVDHPH Supply voltages High to Reset/Power-down High 95 M58BW016DT/B 10 M58BW016FT/B 50 s s tPLRZ Reset/Power-down Low to Data Ready High Impedance tWLRH Write Enable Low to Data Ready High Impedance 80 ns tGLRH Output Enable Low to Data Ready High Impedance 80 ns tELRH Chip Enable Low to Data Ready High Impedance 80 ns tLLRH Latch Enable Low to Data Ready High Impedance 80 ns tPLRH Reset/PowerDown Low to Flash Ready 30 s 80 ns 1. This time is tPHEL + tAVQV or tPHEL + tELQV. 51/70 Package mechanical 8 M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Package mechanical In order to meet environmental requirements, Numonyx offers these devices in RoHS packages, which are lead-free. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. Figure 20. PQFP80 - 80 lead plastic quad flat pack, package outline Ne A2 N 1 e D2 D1 D Nd b E2 A E1 CP L1 E c QFP-B 1. Drawing is not to scale. 52/70 A1 L M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Table 23. Package mechanical PQFP80 - 80 lead plastic quad flat pack, package mechanical data millimeters inches Symbol Typ Min A Typ Min 3.40 A1 A2 Max 0.134 0.25 2.80 b c Max 0.010 2.55 3.05 0.30 0.45 0.13 0.23 D 23.20 22.95 23.45 D1 20.00 19.90 D2 18.40 - e 0.80 - 0.110 0.100 0.120 0.012 0.018 0.005 0.009 0.913 0.903 0.923 20.10 0.787 0.783 0.791 - 0.724 - - - 0.031 - - E 17.20 16.95 17.45 0.677 0.667 0.687 E1 14.00 13.90 14.10 0.551 0.547 0.555 E2 12.00 - - 0.472 - - L 0.80 0.65 0.95 0.031 0.026 0.037 L1 1.60 - - 0.063 - - 7 0 7 a 0 N 80 80 Nd 24 24 Ne 16 16 53/70 Package mechanical M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Figure 21. LBGA80 10 x 12 mm - 8 x 10 active ball array, 1 mm pitch, package outline D D1 FD FE SD SE E E1 BALL "A1" ddd e e b A A2 A1 JE_ME 1. Drawing is not to scale. Table 24. LBGA80 10 x 12 mm - 8 x 10 active ball array, 1 mm pitch, package mechanical data millimeters inches Symbol Typ Min A Typ Min 1.60 A1 Max 0.063 0.40 A2 0.016 1.05 0.041 b 0.60 0.024 D 10.00 - - 0.394 - - D1 7.00 - - 0.276 - - ddd 0.15 0.006 E 12.00 - - 0.472 - - E1 9.00 - - 0.354 - - e 54/70 Max 1.00 0.039 FD 1.50 - - 0.059 - - FE 1.50 - - 0.059 - - SD 0.50 0.020 SE 0.50 0.020 M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB 9 Ordering information Ordering information Table 25. Ordering information scheme Example: M58 BW016D T 8 T 3 F T Device type M58 Architecture B = Burst mode Operating voltage W = VDD = 2.7 V to 3.6 V; VDDQ = VDDQIN = 2.4 to VDD Device function 016D = 16-Mbit (x 32), boot block, burst, 0.15 m 016F = 16-Mbit (x 32), boot block, burst, 0.11 m Array matrix T = Top boot B = Bottom boot Speed 7 = 70 ns 8 = 80 ns (only available in the M58BW016D devices) Package T = PQFP80 ZA = LBGA 10 x 12 mm Temperature range 3 = automotive grade certified(1), -40 to 125 C Version F = silicon version F (only available in the M58BW016D devices) Option T = Tape and reel packing F = RoHS package, tape and reel packing 1. Qualified & characterized according to AEC Q100 & Q003 or equivalent, advanced screening according to AEC Q001 & Q002 or equivalent. Note: Devices are shipped from the factory with the memory content bits erased to '1'. For a list of available options (speed, package, etc.) or for further information on any aspect of this device, please contact the Numonyx Sales Office nearest to you. 55/70 Common Flash interface (CFI) Appendix A M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Common Flash interface (CFI) The common Flash interface is a JEDEC approved, standardized data structure that can be read from the Flash memory device. It allows a system software to query the device to determine various electrical and timing parameters, density information and functions supported by the memory. The system can interface easily with the device, enabling the software to upgrade itself when necessary. When the CFI Query command (RCFI) is issued the device enters CFI query mode and the data structure is read from the memory. Table 26, Table 27, Table 28, Table 29 and Table 30 show the addresses used to retrieve the data. Table 26. Query structure overview Offset Sub-section name Description 00h Manufacturer code 01h Device code 10h CFI Query identification string Command set ID and algorithm data offset 1Bh System interface information Device timing and voltage information 27h Device geometry definition Flash memory layout P(h)(1) Primary algorithm-specific extended query table Additional information specific to the primary algorithm (optional) A(h)(2) Alternate algorithm-specific extended query table Additional information specific to the alternate algorithm (optional) 1. Offset 15h defines P which points to the primary algorithm extended query address table. 2. Offset 19h defines A which points to the alternate algorithm extended query address table. Table 27. CFI - query address and data output(1)(2) Address A0-A18 Data Instruction 10h 51h "Q" 11h 52h "R" 12h 59h "Y" 13h 03h 14h 00h 15h 35h 16h 00h 17h 00h 18h 00h 19h 00h 1Ah 00h 51h; `Q' Query ASCII String 52h; `R' 59h; `Y' Primary vendor: Command set and control interface ID code Primary algorithm extended query address table: P(h) Alternate vendor: Command Set and Control interface ID code Alternate algorithm extended query address table 1. The x 8 or byte address and the x 16 or word address mode are not available. 2. Query data are always presented on DQ7-DQ0. DQ31-DQ8 are set to '0'. 56/70 M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Table 28. Common Flash interface (CFI) CFI - device voltage and timing specification Address A0-A18 Data Description 1Bh 27h (1) VDD min, 2.7 V 1Ch 36h(1) VDD max, 3.6 V 1Dh B4h(2) VPP min 1Eh C6h(2) VPP max 1Fh 04h 2n ms typical time-out for Word, DWord prog - not available 20h 00h 2n ms, typical time-out for max buffer write - not available 21h 0Ah 2n ms, typical time-out for Erase Block 22h 00h 2n ms, typical time-out for chip erase - not available 23h-24h Reserved 25h 04h 2n x typical for individual block erase time-out maximum 26h 00h 2n x typical for chip erase max time-out - not available 1. Bits are coded in binary code decimal, bit7 to bit4 are scaled in Volts and bit3 to bit0 in mV. 2. Bit7 to bit4 are coded in hexadecimal and scaled in Volts while bit3 to bit0 are in binary code decimal and scaled in 100 mV. Table 29. Device geometry definition Address A0-A18 Data Description n 27h 15h 2 number of bytes memory size 28h 03h Device interface sync./async. 29h 00h Organization sync./async. 2Ah 00h 2Bh 00h 2Ch 02h 2Dh 1Eh 2Eh 00h 2Fh 00h 30h 01h 31h 07h 32h 00h 33h 20h 34h 00h Page size in bytes, 2n Bit7-0 = number of erase block regions in device Number (n-1) of blocks of identical size; n=31 Erase block region information x 256 bytes per erase block (64 Kbytes) Number (n-1) of blocks of identical size; n=8 Erase block region information x 256 bytes per erase block (8 Kbytes) 57/70 Common Flash interface (CFI) Table 30. Extended query information Address Address offset A18-A0 58/70 M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Data (Hex) Description (P)h 35h 50h "P" (P+1)h 36h 52h "R" (P+2)h 37h 49h "Y" (P+3)h 38h 31h Major version number (P+4)h 39h 31h Minor version number Optional feature: (1=yes, 0=no) bit0, Chip Erase supported (0=no) bit1, Suspend Erase supported (1=yes) bit2, Suspend Program supported (1=yes) bit3, Lock/Unlock supported (1=yes) bit4, Queue Erase supported (0=no) bit 31-5 reserved for future use (P+5)h 3Ah 86h (P+6)h 3Bh 01h (P+7)h 3Ch 00h (P+8)h 3Dh 00h (P+9)h 3Eh 01h (P+A)h 3Fh Reserved Query ASCII string - extended table Optional features: synchronous read supported Function allowed after suspend: Program allowed after Erase Suspend (1=yes) Bit 7-1 reserved for future use M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Appendix B Flowcharts Flowcharts Figure 22. Program flowchart and pseudocode Start Program Command: - write 40h - write Address & Data (memory enters read status state after the Program command) Write 40h Write Address & Data do: - read status register (E or G must be toggled) Read Status Register b7 = 1 NO while b7 = 0 YES b3 = 0 NO VPP Invalid Error (1) NO Program Error (1) NO Program to Protect Block Error If b3 = 1, VPP invalid error: - error handler YES b4 = 0 If b4 = 1, Program error: - error handler YES b1 = 0 If b1 = 1, Program to Protected Block Error: - error handler YES End AI03850b 1. If an error is found, the status register must be cleared before further program/erase operations. 59/70 Flowcharts M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Figure 23. Program suspend & resume flowchart and pseudocode Start Write B0h Program/Erase Suspend Command: - write B0h - write 70h Write 70h do: - read status register Read Status Register b7 = 1 NO while b7 = 0 YES b2 = 1 NO Program Complete If b2 = 0, Program completed YES Read Memory Array Command: - write FFh - one or more data reads from other blocks Write FFh Read data from another block Write D0h Write FFh Program Continues Read Data Program Erase Resume Command: - write D0h to resume erasure - if the program operation completed then this is not necessary. The device returns to Read Array as normal (as if the Program/Erase Suspend command was not issued). AI00612b 60/70 M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Flowcharts Figure 24. Block erase flowchart and pseudocode Start Erase Command: - write 20h - write Block Address (A11-A18) & D0h (memory enters read status state after the Erase command) Write 20h Write Block Address & D0h NO Read Status Register Suspend b7 = 1 YES NO Suspend Loop do: - read status register (E or G must be toggled) if Erase command given execute suspend erase loop while b7 = 0 YES b3 = 0 NO VPP Invalid Error (1) YES Command Sequence Error NO Erase Error (1) NO Erase to Protected Block Error If b3 = 1, VPP invalid error: - error handler YES b4 and b5 =1 If b4, b5 = 1, Command Sequence error: - error handler NO b5 = 0 If b5 = 1, Erase error: - error handler YES b1 = 0 If b1 = 1, Erase to Protected Block Error: - error handler YES End AI03851b 1. If an error is found, the status register must be cleared before further program/erase operations. 61/70 Flowcharts M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Figure 25. Erase suspend & resume flowchart and pseudocode Start Write B0h Program/Erase Suspend Command: - write B0h - write 70h Write 70h do: - read status register Read Status Register b7 = 1 NO while b7 = 0 YES b6 = 1 NO Erase Complete If b6 = 0, Erase completed YES Read Memory Array command: - write FFh - one or more data reads from other blocks Write FFh Read data from another block or Program Write D0h Write FFh Erase Continues Read Data Program/Erase Resume command: - write D0h to resume the Erase operation - if the Erase operation completed then this is not necessary. The device returns to Read mode as normal (as if the Program/Erase suspend was not issued). AI00615b 62/70 M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Flowcharts Figure 26. Power-up sequence followed by synchronous burst read Power-up or Reset Asynchronous Read Write 60h command BCR bit 15 = '1' Set Burst Configuration Register Command: - write 60h - write 03h and BCR on A15-A0 Write 03h with A15-A0 BCR inputs Synchronous Read BCR bit 15 = '0' AI03834b 63/70 Flowcharts M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Figure 27. Command interface and program/erase controller flowchart (a) WAIT FOR COMMAND WRITE 90h READ ARRAY NO YES READ ELEC. SIGNATURE 98h NO D YES READ CFI 70h NO YES READ STATUS 20h NO YES ERASE SET-UP 40h NO YES ERASE COMMAND ERROR NO D0h PROGRAM SET-UP 50h YES A YES C NO E CLEAR STATUS D READ STATUS B AI03835 64/70 M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Flowcharts Figure 28. Command interface and program/erase controller flowchart (b) E 60h NO YES FFh SET BCR SET_UP 03h NO YES NO YES D AI03836b 65/70 Flowcharts M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Figure 29. Command interface and program/erase controller flowchart (c) A B ERASE YES READY NO NO B0h READ STATUS YES ERASE SUSPEND YES READY NO NO ERASE SUSPENDED READ STATUS YES READ STATUS YES 70h NO 40h YES PROGRAM SET_UP NO READ ARRAY NO D0h C YES READ STATUS AI03837 66/70 M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Flowcharts Figure 30. Command interface and program/erase controller flowchart (d) C B PROGRAM YES READY NO B0h NO READ STATUS YES PROGRAM SUSPEND YES READY NO NO PROGRAM SUSPENDED READ STATUS YES READ STATUS YES 70h NO READ ARRAY NO D0h YES READ STATUS AI03838 67/70 Revision history 10 M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Revision history Table 31. 68/70 Document revision history Date Version Changes January-2001 01 First Issue. 05-Jun-2001 02 Major rewrite and restructure. 15-Jun-2001 03 Nd and Ne values changed in PQFP80 package mechanical table. 17-Jul-2001 04 PQFP80 package outline drawing and mechanical data table updated. 17-Dec-2001 05 tLEAD removed from absolute maximum ratings (Table 12). 80, 90 and 100 ns speed classes defined (Table 16, Table 17, Table 18, Table 19 and Table 20 clarified accordingly). Figure 13, Figure 14, Figure 15 and Figure 16 clarified. Temperature range 3 and 6 added. Table 13, Table 14, Table 15, Table 22 and CFI Table 27, Table 28, Table 29, Table 30 clarified. Document status changed from Product Preview to Preliminary Data. 17-Jan-2002 06 DC characteristics IPP, IPP1 and IDD1 clarified. AC Bus Read characteristics timing tGHQZ clarified. 30-Aug-2002 6.1 Revision numbering modified: a minor revision will be indicated by incrementing the tenths digit, and a major revision, by incrementing the units digit of the previous version (e.g. revision version 06 becomes 6.0). References of VPP pin used for block protection purposes removed. Figure 8 modified. 4-Sep-2002 7.0 Datasheet status changed from Preliminary Data to full Datasheet. tWLWH parameter modified in Table 19: Asynchronous write and latch controlled write AC characteristics. 13-May-2003 7.1 Revision history moved to end of document. VPP clarified in Program and Block Erase commands and Status Register, VPP Status bit. VPPLK added to DC characteristics table. Timing tKHQV modified. 16-Oct-2003 7.2 Silicon Version added to Ordering Information Scheme. 03-Mar-2005 8 Tuning block protection feature removed from the whole document and root part numbers M58BW016BT/B have been removed. Figure 22, Figure 23, Figure 24, Figure 25, Figure 26 and Figure 28 updated. LBGA80 package (ZA) removed. Lead-free option added. 90 and 100 ns access times removed and 70 ns added. Temperature rage 6 removed from Table 25: Ordering information scheme. 06-Sep-2005 9 Load capacitance updated in Table 13: Operating and AC measurement conditions. 3-Mar-2006 10 Updated Table 25: Ordering information scheme on page 55 and Disclaimer information. Converted document to new template. 16-Jun-2006 11 M58BW016FT and M58BW016FB part numbers added. Small text changes. M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Table 31. Revision history Document revision history (continued) Date Version Changes 09-Nov-2006 12 LBGA80 package added (see Figure 21 and Table 24). M58BW016FT and M58BW016FB behavior in Burst mode specified under Section 3.2.1: Synchronous burst read. IDDB, IDD1 and IDD4 current values specified for M58BW016FT and M58BW016FB in Table 15: DC characteristics, IDD5 added. tVDHPH specified for M58BW016FT and M58BW016FB in Table 22: Reset, power-down and power-up AC characteristics. tKHQX specified for M58BW016FT and M58BW016FB in Table 20: Synchronous burst read AC characteristics. 23h-24h reserved in Table 28: CFI - device voltage and timing specification. 3Fh reserved in Table 30: Extended query information. 24-Nov-2006 13 IDD current specified for M58BW016DT/B and M58BW016FT/B in Table 15: DC characteristics. 14 Table 7: Burst configuration register and Table 22: Reset, power-down and power-up AC characteristics updated. Modified values for tLLKH in Table 20: Synchronous burst read AC characteristics. Figure 17: Reset, power-down and power-up AC waveforms - control pins low updated and Figure 18: Reset, power-down and power-up AC waveforms - control pins toggling added. Small text changes. 15 Added: Figure 19: Power supply slope specification and Table 21: Power supply AC and DC characteristics. Changed mechanical data of the LBGA package and the description for the 010 value of M13 M11 bits in Table 7: Burst configuration register. Minor text changes. 12-Mar-2008 16 Added: information on data retention and reliability level on page 1, note 3 below Table 7: Burst configuration register, and note 1, 2, 3 below Figure 13: Synchronous burst read (data valid from `n' clock rising edge). Modified: note 2 below Table 7: Burst configuration register and Table 25: Ordering information scheme. Minor text changes. 26-Mar-2008 17 Applied Numonyx branding. 18 On cover page, revised from "WP pin for write protect of the 4 outermost parameter blocks and all main blocks" to "WP pin for write protect of the 2 outermost parameter blocks and all main blocks" In Table 20.: Synchronous burst read AC characteristics, revised tKHQX (M58BW016FT/B) values from 2 to 3. In Table 21.: Power supply AC and DC characteristics, revised tVDH value from 300 to 50 In Table 22.: Reset, power-down and power-up AC characteristics, added tPLRH. 05-Oct-2007 16-Jan-2008 8-July-2011 69/70 M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Please Read Carefully: INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH NUMONYXTM PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. 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Numonyx StrataFlash is a trademark or registered trademark of Numonyx or its subsidiaries in the United States and other countries. *Other names and brands may be claimed as the property of others. Copyright (c) 11/5/7, Numonyx, B.V., All Rights Reserved. 70/70