IRKH105-12 - International Rectifier

Parameters IRK.105 Units

IT(AV) or IF(AV)

@ 85°C

IO(RMS) (*) 235 A

ITSM @ 50Hz 1785 A

IFSM @ 60Hz 1870 A

I2t @ 50Hz 15.91 KA2s

@ 60Hz 14.52 KA2s

I2√t 159.1 KA2√s

VRRM range 400 to 1600 V

TSTG - 40 to 150 oC

TJ- 40 to130 oC

(*) As AC switch.

105 A

Major Ratings and Characteristics

105 A

ADD-A-pakTM GEN V Power Modules

THYRISTOR/ DIODE and

THYRISTOR/ THYRISTOR

IRK.105 SERIES

Bulletin I27133 rev. H 10/02

www.irf.com

Features

High Voltage

Industrial Standard Package

Thick Al metal die and double stick bonding

Thick copper baseplate

UL E78996 approved

3500VRMS isolating voltage

Benefits

Up to 1600V

Full compatible TO-240AA

High Surge capability

Easy Mounting on heatsink

Al203 DBC insulator

Heatsink grounded

Mechanical Description

The Generation V of Add-A-pak module combine the

excellent thermal performance obtained by the usage of

Direct Bonded Copper substrate with superior

mechanical ruggedness, thanks to the insertion of a

solid Copper baseplate at the bottom side of the device.

The Cu baseplate allow an easier mounting on the

majority of heatsink with increased tolerance of surface

roughness and improve thermal spread.

The Generation V of AAP module is manufactured

without hard mold, eliminating in this way any possible

direct stress on the leads.

Electrical Description

These modules are intended for general purpose high

voltage applications such as high voltage regulated power

supplies, lighting circuits, temperature and motor speed

control circuits, UPS and battery charger.

The electrical terminals are secured against axial pull-out:

they are fixed to the module housing via a click-stop

feature already tested and proved as reliable on other IR

modules.

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IRK.105 Series

Bulletin I27133 rev. H 10/02

www.irf.com

IT(AV) Max. average on-state

current (Thyristors) 180o conduction, half sine wave,

IF(AV) Max. average forward TC = 85oC

current (Diodes)

IO(RMS)Max. continuous RMS

on-state current.

As AC switch

ITSM Max. peak, one cycle 1785 t =10ms No voltage

or non-repetitive on-state 1870 t =8.3ms reapplied

IFSM or forward current 1500 t =10ms 100% VRRM

1570 t =8.3ms reapplied

2000 t =10ms TJ = 25oC,

2100 t =8.3ms no voltage reapplied

I2t Max. I2t for fusing 15.91 t =10ms No voltage

14.52 t =8.3ms reapplied

11.25 t =10ms 100% VRRM

10.27 t =8.3ms reapplied

20.00 t =10ms TJ = 25oC,

18.30 t =8.3ms no voltage reapplied

I2√t Max. I2√t for fusing (1) 159.1 K A2√s t = 0.1 to 10ms, no voltage reappl. TJ =TJ max

VT(TO) Max. value of threshold 0.80 Low level (3)

voltage (2) 0.85 High level (4)

rtMax. value of on-state 2.37 Low level (3)

slope resistance (2) 2.25 High level (4)

VTM Max. peak on-state or ITM = p x IT(AV)

VFM forward voltage IFM = p x IF(AV)

di/dt Max. non-repetitive rate TJ = 25oC, from 0.67 VDRM,

of rise of turned on 150 A/µs ITM =p x IT(AV), Ig = 500mA,

current tr < 0.5 µs, tp > 6 µs

IHMax. holding current 200 TJ = 25oC, anode supply = 6V,

mA resistive load, gate open circuit

ILMax. latching current 400 T J = 25oC, anode supply = 6V, resistive load

Parameters IRK.105 Units Conditions

235

On-state Conduction

Initial TJ = TJ max.

KA2s

mΩ

1.64 V

I(RMS) I(RMS)

ELECTRICAL SPECIFICATIONS

Voltage Ratings

Type number

VRRM , maximum VRSM , maximum VDRM , max. repetitive IRRM

Voltage repetitive non-repetitive peak off-state voltage, IDRM

Code peak reverse voltage peak reverse voltage gate open circuit 130°C

-V V VmA

04 400 500 400

06 600 700 600

08 800 900 800

IRK.105 10 1000 1100 1000 20

12 1200 1300 1200

14 1400 1500 1400

16 1600 1700 1600

Sinusoidal

half wave,

Initial TJ = TJ max.

105

TJ = TJ max

TJ = 25°C

(1) I2t for time tx = I2√t x √tx(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2(3) 16.7% x p x IAV < I < p x IAV

(4) I > p x IAV

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IRK.105 Series

Bulletin I27133 rev. H 10/02

www.irf.com

TJJunction operating

temperature range

Tstg Storage temp. range - 40 to 150

RthJC Max. internal thermal

resistance, junction 0.135 Per module, DC operation

to case

RthCS Typical thermal resistance

case to heatsink

T Mounting torque ± 10%

to heatsink

busbar 3

wt Approximate weight 110 (4) gr (oz)

Case style TO-240AA JEDEC

Thermal and Mechanical Specifications

Parameters IRK.105 Units Conditions

- 40 to 130

0.1

(5) Available with dv/dt = 1000V/ms, to complete code add S90 i.e. IRKT105/16AS90.

°C

K/W

Mounting surface flat, smooth and greased

IRRM Max. peak reverse and

IDRM off-state leakage current 20 mA TJ = 130oC, gate open circuit

at VRRM, VDRM

VINS RMS isolation voltage 2500 (1 min) 50 Hz, circuit to base, all terminals

3500 (1 sec) shorted

dv/dt Max. critical rate of rise TJ = 130oC, linear to 0.67 VDRM,

of off-state voltage (5) gate open circuit

500 V/µs

Triggering

Blocking

PGM Max. peak gate power 12

PG(AV) Max. average gate power 3

IGM Max. peak gate current 3 A

-VGM Max. peak negative

gate voltage

VGT Max. gate voltage 4.0 TJ = - 40°C

required to trigger 2.5 TJ = 25°C

1.7 TJ = 125°C

IGT Max. gate current 270 TJ = - 40°C

required to trigger 150 mA TJ = 25°C

80 TJ = 125°C

VGD Max. gate voltage

that will not trigger

IGD Max. gate current

that will not trigger

0.25 V

6mA

Anode supply = 6V

resistive load

Anode supply = 6V

resistive load

TJ = 125oC,

rated VDRM applied

TJ = 125oC,

rated VDRM applied

Parameters IRK. 105 Units Conditions

A mounting compound is recommended

and the torque should be rechecked after

a period of 3 hours to allow for the spread

of the compound

Parameters IRK.105 Units Conditions

Sine half wave conduction Rect. wave conduction

Devices Units

180o120o90o60o30o180o120o90o60o30o

IRK.105 0.04 0.05 0.06 0.08 0.12 0.03 0.05 0.06 0.08 0.12 °C/ W

∆R Conduction (per Junction)

(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)

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IRK.105 Series

Bulletin I27133 rev. H 10/02

www.irf.com

Outline Table

Dimensions are in millimeters and [inches]

NOTE: To order the Optional Hardware see Bulletin I27900

IRK T 105 / 16 A S90

Device Code

12 3 45

Ordering Information Table

* * Available with no auxiliary cathode.

To specify change: 105 to 106

e.g. : IRKT106/16A etc.

IRK.106 types

With no auxiliary cathode

1- Module type

2- Circuit configuration (See Circuit Configuration table below)

3- Current code * *

4- Voltage code (See Voltage Ratings table)

5- A : Gen V

6- dv/dt code: S90 = dv/dt 1000 V/µs

No letter = dv/dt 500 Vµs

K2 G2

K1G1

(1)

(2)

(3)

(4) (5) (7) (6)

(1)

(2)

(3)

(4) (5)

(1)

(2)

(3)

(7)

(6)

IRKT IRKH IRKL IRKN

(1)

(2)

(3)

(4) (5)

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IRK.105 Series

Bulletin I27133 rev. H 10/02

www.irf.com

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

100

110

120

130

0 20 40 60 80 100 120

30° 60° 90° 120° 180°

A verage On-state Curren t (A)

Maximum Allowable Cas e Tempe rature (°C)

Conduction Angle

IRK.105.. Series

R (DC) = 0 .27 K/W

thJC

100

110

120

130

0 20 40 60 80 100 120 140 160 180

30° 60°

90°120° 180°

Average On-state Current (A)

Maximum A ll o wable Case Temperature (°C)

Conduction Period

IRK.105.. Series

R (DC) = 0.27 K/W

thJC

Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics

Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current

100

120

140

160

180

200

0 20 40 60 80 100 120 140 160 180

180°

120°

90°

60°

30°

RMS Limit

Conduction Period

Maximum Average On-state Power Loss (W)

Average On-state Current (A )

IRK.105.. Series

Per Junction

T = 130°C

100

120

140

160

0 20 40 60 80 100 120

RMS Limit

Maximum Average On-state Power Loss (W)

Aver a ge O n- s ta te Cu rr ent (A)

180°

120°

90°

60°

30°

Con duc ti on A ng le

IRK.105.. Series

Per Junction

T = 130°C

700

800

900

1000

1100

1200

1300

1400

1500

1600

1 10 100

Number Of Equal A mplitu de Half Cycle C u rr en t Puls e s (N)

Peak Half Sine Wave On-state Cur rent (A)

Initial T = 130°C

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s

At Any Rated Load Condition And With

Rated V Applied Following Surge.

RRM

IRK.105.. Series

Pe r Junc tion 600

800

1000

1200

1400

1600

1800

0.01 0.1 1

Peak Half Sine Wave On-state Current (A)

Pulse Train Duration (s)

Maximum Non Repetitive Surge Current

Versus Pulse Train Duration. Control

Initial T = 130°C

No Voltage Reapplied

Rated V Reapplied

Of Conduction May Not Be Maintained.

RRM

IR K.105. . Seri e s

Pe r Junction

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IRK.105 Series

Bulletin I27133 rev. H 10/02

www.irf.com

Fig. 9 - On-state Power Loss Characteristics

Fig. 8 - On-state Power Loss Characteristics

0 20 40 60 80 100 120 140

Maximum Allo wa ble Ambient Temperature (°C)

0.5 K/W

0.3 K/W

R = 0.1 K/W - Delta R

thSA

0.2 K/W

0.7 K/W

1 K/W

2 K/W

100

200

300

400

500

600

0 40 80 120 160 200

Total Outpu t Curr ent (A)

Maximum Total Power Loss (W)

180°

(Sine)

180°

(Rect)

2 x IRK.105.. Series

Sin gle Ph ase Bridge

Connected

T = 130°C

0 20 40 60 80 100 120 140

Maximum Allowable Ambient Temperature (°C)

1 K/W

0.5 K/W

0.3 K/W

R = 0.1 K/W - Delta R

0.2 K/W

thSA

100

200

300

400

500

600

700

800

900

0 40 80 120 160 200 240 280

Total Outpu t Curr ent (A)

Maximum Total Power Loss (W)

120°

(Rect)

3 x IRK.105.. Series

Th ree Ph a s e Bri d g e

Connected

T = 130°C

Fig. 7 - On-state Power Loss Characteristics

0 20 40 60 80 100 120 140

Maximum Allowable Ambient Temperature (°C)

2 K/W

1 K/W

0.7 K/W

0.5 K/W

0.3 K/W

R = 0.1 K/W - Delta R

thSA

0.2 K/W

100

150

200

250

300

350

0 40 80 120 160 200 240

180°

120°

90°

60°

30°

Total RMS Output Current (A)

Maximum Total On-state Power Loss (W)

Conduction Angle

IRK.105.. Series

Per Module

T = 130°C

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IRK.105 Series

Bulletin I27133 rev. H 10/02

www.irf.com

Fig. 10 - On-state Voltage Drop Characteristics

100

1000

0 0.5 1 1.5 2 2.5 3 3.5

T = 25°C

Ins ta ntaneous On-state Cur r e nt (A)

Instantaneous On-state Voltage (V)

T = 130°C

IRK.105.. Series

Per Junct ion

Fig. 13 - Thermal Impedance ZthJC Characteristics

Fig. 11 - Recovery Charge Characteristics Fig. 12 - Recovery Current Characteristics

100

120

140

10 20 30 40 50 60 70 80 90 100

Maxi mum Reve rse Recove ry Cu rrent - Irr (A)

Rate Of Fall O f Forward Current - di/dt (A/µs)

100 A

50 A

I = 200 A

20 A

10 A

IRK.105.. Series

T = 125 °C

0.01

0.1

0.001 0.01 0.1 1 10

Sq u a re Wa v e Puls e Du ra ti o n (s )

thJC

Tra nsie nt Thermal Im pedanc e Z (K/W)

IRK.105.. Series

Per Junction

Steady Sta te Value:

R = 0.27 K/W

(DC Op eration)

thJC

100

200

300

400

500

600

700

10 20 30 40 50 60 70 80 90 100

100 A

50 A

Rate Of Fa ll Of On-sta te Current - di/dt (A/ µs)

Maximum Reverse Rec o very Cha rg e - Qrr (µC)

I = 200 A

20 A

10 A

IRK.105.. Series

T = 125 °C

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IRK.105 Series

Bulletin I27133 rev. H 10/02

www.irf.com

Fig. 14- Gate Characteristics

0.1

100

0.001 0.01 0.1 1 10 100 1000

(b)

(a)

(4) (3) (2) (1)

Instantaneous Gate Current (A)

Ins tantaneous Gate Voltage (V)

TJ = -40 °C

TJ = 25 °C

TJ = 125 °C

a)Recommended load line for

b)Recommended load line for

VGD IGD Freq uency Limited by PG(AV)

(1) PGM = 200 W, tp = 300 µs

(2) PGM = 60 W, tp = 1 ms

(3) PGM = 30 W, tp = 2 ms

(4) PGM = 12 W, tp = 5 ms

<= 30% rated di/dt: 15 V, 40 ohms

tr = 1 µs, tp >= 6 µs

rated di/dt: 2 0 V, 20 ohms

tr = 0.5 µs, tp >= 6 µs

Rectangular gate pulse

IRK.105.. Series

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7309

Visit us at www.irf.com for sales contact information. 10/02

Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial Level.

Qualification Standards can be found on IR's Web site.

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