Rev.2.00 Sep 07, 2005 page 1 of 7
2SK1623(L), 2SK1623(S)
Silicon N Channel MOS FET REJ03G0958-0200
(Previous : AD E-208- 1 299)
Rev.2.00
Sep 07, 2005
Application
High speed power swit ching
Features
• Low on-resistance
• High speed switching
• 4 V gate drive device
Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid dr ive
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK(L))
1. Gate
2. Drain
3. Source
4. Drain
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1))
D
G
S
123
4
123
4
2SK1623(L) , 2SK 162 3( S)
Rev.2.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V(BR)DSS 100 V
Gate to source voltage VGSS ±20 V
Drain current ID 20 A
Drain peak current ID(pulse)*1 80 A
Body to drain diode reverse drain current IDR 20 A
Channel dissipation Pch*2 50 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown voltage V(BR)DSS 100 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0
Zero gate voltage drain current IDSS — — 250 µA VDS = 80 V, VGS = 0
Gate to source cutoff volta ge VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V
— 0.065 0.085 Ω I
D = 10 A, VGS = 10 V *3 Static drain to source on state
resistance RDS(on) — 0.085 0.12 Ω I
D = 10 A, VGS = 4 V *3
Forward transfer admittance |yfs| 10 16 — S ID = 10 A, VDS = 10 V *3
Input capacitan ce Ciss — 1300 — pF
Output capacitance Coss — 540 — pF
Reverse transfer capacitance Crss — 160 — pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time td(on) — 12 — ns
Rise time tr — 100 — ns
Turn-off delay time td(off) — 300 — ns
Fall time tf — 150 — ns
ID = 10 A, VGS = 10 V,
RL = 3 Ω
Body to drain diode forward voltage VDF — 1.3 — V IF = 20 A, VGS = 0
Body to drain diode reverse recovery
time trr — 300 — ns IF = 20 A, VGS = 0,
diF/dt = 50 A/µs
Note: 3. Pulse test
2SK1623(L) , 2SK 162 3( S)
Rev.2.00 Sep 07, 2005 page 3 of 7
Main Characteristics
Maximum Safe Operation Area
Drain Current ID (A)
300100303
100
10
0.3
1
30
0.1
Drain to Source Voltage V
DS
(V)
10 1000
3
1
100 µs
1 ms
Ta = 25
°
C
10 µs
DC Operation (T
C
= 25
°
C)
PW = 10 ms (1 Shot)
Operation in this area
is limited by RDS (on)
Typical Output Characteristics
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
20161284
20
16
12
8
4
0
VGS = 2.5 V
Pulse Test
6 V
3 V
3.5 V
10 V
4 V
Typical Transfer Characteristics
3
Gate to Source Voltage V
GS
(V)
42105
2
4
6
8
10
0
Drain Current I
D
(A)
VDS = 10 V
Pulse Test
25
°
C
–25
°
C
TC = 75
°
C
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
6
Gate to Source Voltage V
GS
(V)
842010
1.0
1.5
2.0
2.5
0
0.5
Drain to Source Saturation Voltage
V
DS (on)
(V)
Pulse Test
ID = 2 A
5 A
10 A
5
Drain Current I
D
(A)
102150
0.2
0.5
1
2
5
0.5
0.1
0.05
20
Static Drain to Source on State
Resistance vs. Drain Current
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
VGS = 4 V 10 V
Pulse Test
60
40
20
0 50 100 150
Case Temperature TC (°C)
Power vs. Temperature Derating
Channel Dissipation Pch (W)
2SK1623(L) , 2SK 162 3( S)
Rev.2.00 Sep 07, 2005 page 4 of 7
80
Case Temperature TC (°C)
120400
0.1
0.2
0.3
0.4
0.5
–40
0
160
Static Drain to Source on State
Resistance vs. Temperature
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
I
D
= 10 A
Pulse Test
V
GS
= 4 V
10 V
2 A
5 A
2 A
10 A
5 A
Forward Transfer Admittance
vs. Drain Current
50
20
10
5
2
1
0.1 0.2 0.5 1210
Drain Current ID (A)
5
Forward Transfer Admittance yfs (S)
0.5
T
C
= –25
°
C
V
DS
= 10 V
Pulse Test
25
°
C
75
°
C
500
200
100
50
20
10
5
0.1 0.2 1 10
Reverse Drain Current IDR (A)
2
0.5 5
Body to Drain Diode Reverse
Recovery Time
Reverse Recovery Time trr (ns)
di/dt = 50 A/µs
V
GS
= 0, Ta = 25
°
C
Pulse Test
Typical Capacitance vs.
Drain to Source Voltage
10,000
1,000
100
10
Capacitance C (pF)
01020 50
Drain to Source Voltage VDS (V)
30 40
V
GS
= 0
f = 1 MHz
Ciss
Coss
Crss
200
160
120
80
40
0824
32
Gate Charge Qg (nc)
16
20
16
12
8
4
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
40
0
V
DS
V
GS
V
DD
= 25 V
50 V
80 V
I
D
= 10 A
V
DD
= 80 V
50 V
25 V
Switching Characteristics
500
200
100
50
10
5
0.2 0.5 2 20
Drain Current ID (A)
5
110
Switching Time t (ns)
20
t
d
(off)
t
d (on)
t
f
t
r
V
GS
= 10 V, PW = 2 µs
duty < 1 % V
DD
=
..30 V
2SK1623(L) , 2SK 162 3( S)
Rev.2.00 Sep 07, 2005 page 5 of 7
20
16
12
8
4
00.4 1.2
1.6 2.0
Source to Drain Voltage V
SD
(V)
0.8
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current I
DR
(A)
0, –5 V
Pulse Test
V
GS
= 10 V
5 V
3
1.0
0.3
0.1
0.03
0.01
10 µ1 m 10 m 100 m
Pulse Width PW (S)
100 µ110
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance γs (t)
θch–c
(t) = γs
(t) • θch–c
θch–c = 2.5°C/W, T
C
= 25°C
PW
D =
PW
T
T
T
C
= 25°C
P
DM
D = 1
0.5
0.05
1 Shot Pulse
0.2
0.1
0.02
0.01
Vin Monitor
Vout Monitor
R
L
50 Ω
Vin = 10 V
D.U.T
.
V
DD
= 30 V
.
Switching Time Test Circuit
Vin 10 %
90 %
90 %
90 %
10 %
td (on) td (off)
trtf
Vout 10 %
Waveforms
2SK1623(L) , 2SK 162 3( S)
Rev.2.00 Sep 07, 2005 page 6 of 7
Package Dimensions
10.2 ± 0.3
0.86
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
+ 0.2
– 0.1
1.3 ± 0.2
4.44 ± 0.2
1.3 ± 0.15
2.49 ± 0.2
0.4 ± 0.1
11.0 ± 0.5
8.6 ± 0.3
10.0
11.3 ± 0.5
+ 0.3
– 0.5
(1.4)
1.37 ± 0.2
Package Name
PRSS0004AE-A LDPAK(L) / LDPAK(L)V
MASS[Typ.]
1.40g
RENESAS CodeJEITA Package Code
Unit: mm
10.2 ± 0.3
1.37 ± 0.2
(1.5)
(1.4)
8.6 ± 0.3
10.0
+ 0.3
– 0.5
4.44 ± 0.2
1.3 ± 0.15
0.1
+ 0.2
– 0.1
0.4 ± 0.1
2.49 ± 0.2
0.86
+ 0.2
– 0.1
2.54 ± 0.5
2.54 ± 0.5
1.3 ± 0.2
3.0
+ 0.3
– 0.5
(1.5)
7.8
6.6
2.2
1.7
7.8
7.0
SC-83 1.30g
MASS[Typ.]
LDPAK(S)-(1) / LDPAK(S)-(1)V
PRSS0004AE-B
RENESAS CodeJEITA Package Code Package Name
Unit: mm
2SK1623(L) , 2SK 162 3( S)
Rev.2.00 Sep 07, 2005 page 7 of 7
Ordering Information
Part Name Quantity Shipping Container
2SK1623L-E 500 pcs Box (Sack)
2SK1623STL-E 1000 pcs Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
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