2SK1623(L), 2SK1623(S) Silicon N Channel MOS FET REJ03G0958-0200 (Previous: ADE-208-1299) Rev.2.00 Sep 07, 2005 Application High speed power switching Features * Low on-resistance * High speed switching * 4 V gate drive device Can be driven from 5 V source * Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L)) RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1)) 4 4 D 1. Gate 2. Drain 3. Source 4. Drain G 1 1 2 3 Rev.2.00 Sep 07, 2005 page 1 of 7 2 3 S 2SK1623(L), 2SK1623(S) Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Symbol V(BR)DSS Ratings 100 Unit V VGSS ID 20 20 V A 80 20 A A ID(pulse) IDR *1 *2 Channel dissipation Channel temperature Pch Tch 50 150 W Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C Tstg -55 to +150 C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Symbol V(BR)DSS Min 100 Typ -- Max -- Unit V Gate to source breakdown voltage Gate to source leak current V(BR)GSS IGSS 20 -- -- -- -- 10 V A IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 Zero gate voltage drain current Gate to source cutoff voltage IDSS VGS(off) -- 1.0 -- -- 250 2.0 A V VDS = 80 V, VGS = 0 ID = 1 mA, VDS = 10 V Static drain to source on state resistance RDS(on) -- -- 0.065 0.085 0.085 0.12 ID = 10 A, VGS = 10 V * 3 ID = 10 A, VGS = 4 V * Forward transfer admittance Input capacitance |yfs| Ciss 10 -- 16 1300 -- -- S pF Output capacitance Reverse transfer capacitance Coss Crss -- -- 540 160 -- -- pF pF ID = 10 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz Turn-on delay time Rise time td(on) tr -- -- 12 100 -- -- ns ns Turn-off delay time Fall time td(off) tf -- -- 300 150 -- -- ns ns Body to drain diode forward voltage Body to drain diode reverse recovery time VDF trr -- -- 1.3 300 -- -- V ns Note: 3. Pulse test Rev.2.00 Sep 07, 2005 page 2 of 7 Test conditions ID = 10 mA, VGS = 0 3 3 ID = 10 A, VGS = 10 V, RL = 3 IF = 20 A, VGS = 0 IF = 20 A, VGS = 0, diF/dt = 50 A/s 2SK1623(L), 2SK1623(S) Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 100 Ta = 25C 10 (1 Sh ot ) ) C 25 150 Operation in this area is limited by RDS (on) 1 3 10 30 100 300 1000 Typical Output Characteristics Typical Transfer Characteristics 10 Pulse Test 6V 4V Drain Current ID (A) 16 12 3.5 V 8 3V 4 VGS = 2.5 V 4 8 12 VDS = 10 V Pulse Test 16 8 6 4 2 TC = 75C 0 20 1 25C -25C 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 2.5 Pulse Test 10 A 2.0 1.5 5A 1.0 ID = 2 A 0.5 2 4 6 8 Gate to Source Voltage VGS (V) Rev.2.00 Sep 07, 2005 page 3 of 7 10 Static Drain to Source on State Resistance RDS (on) () Drain Current ID (A) s = Drain to Source Saturation Voltage VDS (on) (V) m Drain to Source Voltage VDS (V) 10 V 0 s Case Temperature TC (C) 20 0 m (T C 100 10 1 0.1 50 1 = s 3 0.3 0 PW 0 10 n 20 s 10 40 tio ra pe O Drain Current ID (A) 30 C D Channel Dissipation Pch (W) 60 5 Pulse Test 2 1 0.5 VGS = 4 V 10 V 0.2 0.1 0.05 0.5 1 2 5 10 20 Drain Current ID (A) 50 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance vs. Temperature 0.5 ID = 10 A Pulse Test 5A 2A 0.4 10 A 5A 0.3 VGS = 4 V 2A 0.2 10 V 0.1 0 -40 0 40 80 120 160 25C 75C 2 1 0.5 0.1 0.2 0.5 5 2 1 10 10,000 Capacitance C (pF) 50 di/dt = 50 A/s VGS = 0, Ta = 25C Pulse Test 20 10 1,000 Ciss Coss 100 Crss VGS = 0 f = 1 MHz 10 0.2 0.5 1 2 5 0 10 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 200 20 160 16 VDD = 25 V 50 V 80 V 120 VGS 12 VDS 8 40 ID = 10 A VDD = 80 V 50 V 25 V 8 16 24 32 Gate Charge Qg (nc) Rev.2.00 Sep 07, 2005 page 4 of 7 4 0 40 500 Gate to Source Voltage VGS (V) Reverse Recovery Time trr (ns) Drain to Source Voltage VDS (V) 5 Typical Capacitance vs. Drain to Source Voltage 100 0 TC = -25C 10 Body to Drain Diode Reverse Recovery Time 200 80 VDS = 10 V 20 Pulse Test Drain Current ID (A) 500 5 0.1 50 Case Temperature TC (C) td (off) Switching Time t (ns) Static Drain to Source on State Resistance RDS (on) () 2SK1623(L), 2SK1623(S) 200 100 tf 50 tr 20 VGS = 10 V, PW =. 2 s duty < 1 % VDD =. 30 V 10 td (on) 5 0.2 0.5 1 2 5 Drain Current ID (A) 10 20 2SK1623(L), 2SK1623(S) Reverse Drain Current vs. Source to Drain Voltage 20 Reverse Drain Current IDR (A) Pulse Test 16 12 8 5V 4 VGS = 10 V 0, -5 V 0 0.4 0.8 1.2 1.6 2.0 Normalized Transient Thermal Impedance s (t) Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25C D=1 1.0 0.5 0.3 0.2 ch-c (t) = s (t) * ch-c ch-c = 2.5C/W, TC = 25C 0.1 0.1 0.05 0.02 0.03 0.01 10 PDM e 1 0.0 t Puls ho S 1 T 100 1m 100 m 10 m D =PW T PW 1 10 Pulse Width PW (S) Switching Time Test Circuit Waveforms Vin Monitor 90 % Vout Monitor Vin D.U.T RL Vout 50 Vin = 10 V Rev.2.00 Sep 07, 2005 page 5 of 7 . VDD =. 30 V td (on) 10 % 10 % 90 % tr 10 % 90 % td (off) tf 2SK1623(L), 2SK1623(S) Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] PRSS0004AE-A LDPAK(L) / LDPAK(L)V 1.40g 8.6 0.3 1.3 0.15 1.3 0.2 1.37 0.2 0.76 0.1 2.54 0.5 2.54 0.5 RENESAS Code Package Name PRSS0004AE-B LDPAK(S)-(1) / LDPAK(S)-(1)V 0.4 0.1 MASS[Typ.] Unit: mm 1.30g (1.5) 10.0 Rev.2.00 Sep 07, 2005 page 6 of 7 2.54 0.5 0.4 0.1 0.3 3.0 +- 0.5 2.54 0.5 0.2 0.86 +- 0.1 7.8 7.0 2.49 0.2 0.2 0.1 +- 0.1 1.37 0.2 1.3 0.2 7.8 6.6 1.3 0.15 + 0.3 - 0.5 8.6 0.3 (1.5) (1.4) 4.44 0.2 10.2 0.3 1.7 SC-83 2.49 0.2 11.0 0.5 11.3 0.5 0.3 10.0 +- 0.5 (1.4) 4.44 0.2 10.2 0.3 0.2 0.86 +- 0.1 JEITA Package Code Unit: mm 2.2 2SK1623(L), 2SK1623(S) Ordering Information Part Name 2SK1623L-E 2SK1623STL-E Quantity 500 pcs 1000 pcs Shipping Container Box (Sack) Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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