AOW11N60
600V,11A N-Channel MOSFET
General Description Product Summary
V
DS
I
D
(at V
GS
=10V) 11A
R
DS(ON)
(at V
GS
=10V) < 0.7Ω
100% UIS Tested
100% R
g
Tested
The AOW11N60 has been fabricated using an advanced
high voltage MOSFET process that is designed to deliver
high levels of performance and robustness in popular AC-
DC applications.By providing low R
DS(on)
, C
iss
and C
rss
along with guaranteed avalanche capability this device
can be adopted quickly into new and existing offline power
supply designs.
700V@150℃
G
D
S
Top View
TO-262
Bottom View
G
D
S
GD
S
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
E
AS
Peak diode recovery dv/dt dv/dt
T
J
, T
STG
T
L
Symbol
R
θ
JA
R
θCS
R
θJC
W/
o
C
Junction and Storage Temperature Range
Avalanche Current
C
5
Single plused avalanche energy
mJ
V/ns
Derate above 25
o
C
272
Repetitive avalanche energy
C
0.46
Units
°C/W65
0.5
AOW11N60
°C/W
°C/W
Parameter
2.2
VGate-Source Voltage
T
C
=100°C A
Pulsed Drain Current
C
Continuous Drain
Current
T
C
=25°C I
D
11
8.0
-55 to 150
300
A
mJ
V
UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Drain-Source Voltage
AOW11N60
600
Maximum Case-to-sink
A
Maximum Junction-to-Case
±30
4.8
39
345
690
Maximum Junction-to-Ambient
A,D
Power Dissipation
B
P
D
T
C
=25°C
Thermal Characteristics
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds °C
°C
W
AOW11N60
Rev 0: Jan 2012
www.aosmd.com Page 1 of 5
AOW11N60
Symbol Min Typ Max Units
600
700
BV
DSS
/∆TJ 0.67 V/
o
C
1
10
I
GSS
Gate-Body leakage current ±100 nΑ
V
GS(th)
Gate Threshold Voltage 3.3 3.9 4.5 V
R
DS(ON)
0.6 0.7 Ω
g
FS
12 S
V
SD
0.73 1 V
I
S
Maximum Body-Diode Continuous Current 11 A
I
SM
39 A
C
iss
1320 1656 1990 pF
C
oss
100 146 195 pF
C
rss
6.5 11.2 16 pF
R
g
1.7 3.5 5.3 Ω
Q
g
24 30.6 37 nC
Q
gs
9.6 nC
Q
gd
9.6 nC
t
D(on)
39 ns
t
r
58 ns
t
D(off)
92
ns
I
D
=250µA, V
GS
=0V, T
J
=25°C
I
D
=250µA, V
GS
=0V, T
J
=150°C
Gate Drain Charge
Total Gate Charge
V
GS
=10V, V
DS
=480V, I
D
=11A
Gate Source Charge
Static Drain-Source On-Resistance V
GS
=10V, I
D
=5.5A
Maximum Body-Diode Pulsed Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-Off DelayTime
V
GS
=10V, V
DS
=300V, I
D
=11A,
R
G
=25
Ω
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Turn-On Rise Time
Reverse Transfer Capacitance
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
V
DS
=5V
I
D
=250µA
V
DS
=480V, T
J
=125°C
Breakdown Voltage Temperature
Coefficient
I
DSS
Zero Gate Voltage Drain Current V
DS
=600V, V
GS
=0V
BV
DSS
I
D
=250µA, V
GS
=0V
µA
V
DS
=0V, V
GS
=±30V
V
Drain-Source Breakdown Voltage
V
GS
=0V, V
DS
=25V, f=1MHz
SWITCHING PARAMETERS
I
S
=1A,V
GS
=0V
V
DS
=40V, I
D
=5.5A
Forward Transconductance
Diode Forward Voltage
t
D(off)
92
ns
t
f
42 ns
t
rr
400 500 600 ns
Q
rr
4.7 5.9 7.1 µC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge I
F
=11A,dI/dt=100A/µs,V
DS
=100V
Turn-Off DelayTime
R
G
=25
Ω
Turn-Off Fall Time
Body Diode Reverse Recovery Time I
F
=11A,dI/dt=100A/µs,V
DS
=100V
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PDis based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ=25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=4.8A, VDD=150V, RG=25Ω, Starting TJ=25°C
Rev0: Jan 2012 www.aosmd.com Page 2 of 5
AOW11N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
4
8
12
16
20
0 5 10 15 20 25 30
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics
VGS=5.5V
6V
10V
6.5V
0.1
1
10
100
2 4 6 8 10
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics
-
55
°
C
V
DS
=40V
25°C
125
°
C
0.4
0.6
0.8
1.0
1.2
1.4
0 4 8 12 16 20 24
RDS(ON) (Ω)
ID(A)
Figure 3: On
-
Resistance vs. Drain Current and Gate
VGS=10V
0
0.5
1
1.5
2
2.5
3
-100 -50 0 50 100 150 200
Normalized On-Resistance
Temperature (°C)
Figure 4: On
-
Resistance vs. Junction Temperature
VGS=10V
ID=5.5A
40
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
Figure 3: On
-
Resistance vs. Drain Current and Gate
Voltage
Figure 4: On
-
Resistance vs. Junction Temperature
0.8
0.9
1
1.1
1.2
-100 -50 0 50 100 150 200
BVDSS (Normalized)
TJ (°C)
Figure 5:Break Down vs. Junction Temperature
Rev0: Jan 2012 www.aosmd.com Page 3 of 5
AOW11N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
3
6
9
12
15
0 10 20 30 40 50
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
VDS=480V
ID=11A
1
10
100
1000
10000
0.1 1 10 100
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
C
rss
0.01
0.1
1
10
100
1 10 100 1000
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area for AOW11N60 (Note F)
10
µ
s
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
TC=25°C
100µs
0
2
4
6
8
10
12
0 25 50 75 100 125 150
Current rating ID(A)
TCASE (°C)
Figure 10: Current De-rating (Note B)
Operating Area for AOW11N60 (Note F)
0.001
0.01
0.1
1
10
1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10
ZθJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOW11N60(Note F)
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.46°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Ton
T
P
D
Single Pulse
Rev0: Jan 2012 www.aosmd.com Page 4 of 5
AOW11N60
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Vdd
Vgs
Id
+
VDC
L
Vgs
Vds
BV
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
AR
DSS
2
E = 1/2 LI
AR
AR
Vdd
Vgs
Vgs
Rg
DUT
-
VDC
Id
Vgs
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
Rev0: Jan 2012 www.aosmd.com Page 5 of 5