N-Channel Enhancement Mode MOSFET
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003
APM3040N
www.anpec.com.tw1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Packa ge Code
D : S OT -8 9
O perating Junc tion Tem p. Range
C : -55 to 125 C
Ha ndling Code
TR : Tape & R eel
°
APM3040N
Ha ndling Code
Temp. R ange
Packa ge Code
XXXXX - D ate Code
AP M 3040N D : APM3040N
XXXXX
Pin Description
Ordering and Marking Information
Features
Applications
• Power Management in Notebook Computer.
• Portable Equipment and Battery Powered
Systems.
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol Parameter Rating Unit
VDSS Drain-Source Voltage 30
VGSS Gate-Source Voltage ±12 V
ID Maxim um Drain Current – Continuous 4.5
IDM Maxim um Pulsed Drain Current ( pulse width ≤ 300µs) 20 A
• 30V/4.5A, RDS(ON)=31mΩ(typ.) @ VGS=10V
RDS(ON)=35mΩ(typ.) @ VGS=4.5V
RDS(ON)=55mΩ(typ.) @ VGS=2.5V
••
••
• Super High Dense Cell Design for Extremely
••
••
• High Power and Current Handling Capability
••
••
• SOT-89 Package
GDS
123
Top View of SOT-89
G
S
D
N-Channel MOSFET
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003
APM3040N
www.anpec.com.tw2
APM3040N
Symbol Parameter Test Condition
Min. Typ. Max. Unit
Static
BVDSS D rain-So urc e Br ea kdown
Vo ltage VGS=0V, IDS=250µA30 V
IDSS Zero G ate Voltage Drain
Current VDS=24V, VGS=0V
1 µA
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=250µA0.6 0.75 1.5 V
IGSS Gate Leakage Curren t VGS=±12V, VDS=0V
±100nA
VGS=10V, IDS=3A 31 40
VGS=4.5V, IDS=1.5A 35 50
RDS(ON)a Drain-Sourc e O n- s tate
Resistance VGS=2.5V, IDS=0.5A 55 70
mΩ
VSDa Diode Forward Voltage ISD=0.5A, VGS=0V 0.7 1.3 V
Dynamicb
Qg Total Gate Charge 9.2 13
Qgs Gate-Source Charge 2.5
Qgd Gate-Drain Charge
VDS=10V, VGS=4.5V,
IDS=3A
2
nC
td(ON) Turn-on Delay Time 11 22
tr Turn-on Rise Time 17 32
td(OFF) Turn-off Delay Time 37 68
tf Turn-off Fall Time
VDD=15V,ID=3 A,
VGS=10V, RG=6Ω
20 38
ns
Ciss Input Capacitance 426
Coss Output Capacitance 80
Crss Reverse Trans fe r
VGS=0V
VDS=25V
Frequency=1.0MHz
39
pF
Notes: a: Pulse test; pulse width ≤ 300µs, duty cycle ≤ 2%.
b: Guaranteed by design, not subjec t to produc tion testing.
Absolute Maximum Ratings (Cont.) (TA = 25°C unless otherwise noted)
Symbol Parameter Rating Unit
TA=25°C 1.4
PD Maximum Power Dissipation TA=100°C 0.5 W
TJ Maximum Junction Temperature 150 °C
TSTG Storage Temperature Range -55 to 150 °C
RθJA Thermal Resistance – Junction to Ambient 85 °C/W
Electrical Characteristics (TA = 25°C unless otherwise noted)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003
APM3040N
www.anpec.com.tw3
Typical Characteristics
ID-Drain Current (A)
Transfer Characteristics
VGS - Gate-to-Source Voltage (V)VDS - Drain-to-Source V oltage (V)
Output Characteristics
ID-Drain Current (A)
Threshold V oltage vs. T emperature
Tj - Junction Temperature (°C)
VGS(th)-Threshold V oltage (V)
(Normalzed)
RDS(on)-On-Resistance (Ω)
On-Resistance vs. Drain Current
ID - Drain Current (A)
-50 -25 0 25 50 75 100 125 150
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
IDS =250µA
012345678910
0
2
4
6
8
10
12
14
16
18
20
VGS=1.5V
VGS=2V
VGS=3,4,5,6,7,8,9,10V
0246810
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
VGS=10V
VGS=4.5V
VGS=2.5V
0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0
0
2
4
6
8
10
12
14
16
18
20
Tj=-55oC
Tj=25oC
Tj=125oC
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003
APM3040N
www.anpec.com.tw4
-50 -25 0 25 50 75 100 125 150
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
RON@TJ = 25°C: 31mΩ
VGS = 10V
IDS = 3A
Typical Characteristics
VGS - Gate-to-Source Voltage (V)
RDS(on)-On-Resistance (Ω)
On-Resistance vs. Gate-to-Source V oltage
RDS(on)-On-Resistance
(Normalized)
On-Resistance vs. Junction Temperature
TJ - Junction Temperature (°C)
Gate Charge
QG - Gate Charge (nC)
VGS-Gate-Source V oltage (V)
Capacitance (pF)
Capacitance
VDS - Drain-to-Source Voltage (V)
0 5 10 15 20 25 30
0
100
200
300
400
500
600 Frequency=1MHz
Crss
Coss
Ciss
012345678910
0.020
0.025
0.030
0.035
0.040
0.045
0.050
0.055 ID=3A
0246810
0
1
2
3
4
5VDS= 10 V
ID= 3 A
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003
APM3040N
www.anpec.com.tw5
Typical Characteristics
Source-Drain Diode Forward V oltage
IS-Source Current (A)
VSD -Source-to-Drain V oltage (V)
Power (W)
Single Pulse Power
Time (sec)
Normalized Thermal Transient Impedence, Junction to Ambient
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (sec)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.1
1
10
20
Tj=150oC
Tj=25oC
1E-4 1E-3 0.01 0.1 1 10 100 300
1E-3
0.01
0.1
1
2
D=0.01
PDM
t 1
t 2
D=0.02
D=0.05
D=0.1
D=0.2
Duty Cycle=0.5
SINGLE PU LS E 1.Du ty Cycle, D= t1/t2
2.Per Un it Base= R thJA=85oC/W
3.TJM-TA=PDMZthJA
4.Surface Mo unted
1E-4 1E-3 0.01 0.1 1 10 100300
0
50
100
150
200
250
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003
APM3040N
www.anpec.com.tw6
D
D1
e
B1
e1
B
123
L
HE
C
a
a
A
SOT-89 (Reference EIAJ ED-7500A Reg stration SC-62)
Millimeters Inches
Dim Min. Max. Min. Max.
A 1.40 1.60 0.055 0.063
B 0.40 0.56 0.016 0.022
B1 0.35 0.48 0.014 0.019
C 0.35 0.44 0.014 0.017
D 4.40 4.60 0.173 0.181
D1 1.35 1.83 0.053 0.072
e 1.50 BSC 0.059 BSC
e1 3.00 B SC 0.118 BSC
E 2.29 2.60 0.090 0.102
H 3.75 4.25 0.148 0.167
L 0.80 1.20 0.031 0.047
α10°10°
Package Information
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003
APM3040N
www.anpec.com.tw7
Reference JEDEC Standard J-STD-020A APRIL 1999
Reflow Condition (IR/Convection or VPR Reflow)
Physical Specifications
Pre-heat temperature
183 C
Peak temperature
Time
°
temperature
Classification Reflow Profiles
Convection or I R/
Convection VPR
Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C) 120 seconds max
Temperat ure maintaine d above 183°C60 – 150 seconds
Time within 5°C of actual peak temperature 10 –20 seconds 60 seconds
Peak tem perature range 220 +5/-0 °C or 235 +5/-0 °C 215-219°C or 235 +5/- 0°C
Ramp-down rate 6 °C /second max . 10 °C /second max.
Time 25°C to peak temp erature 6 minutes max .
Package Reflow Conditions
pkg. thickness ≥
≥≥
≥ 2.5mm
and all bgas pkg. thickness < 2.5mm and
pkg. volume ≥
≥≥
≥ 350 mm³ pkg. thickness < 2.5mm and pkg.
volume < 350mm³
Convection 220 +5/- 0 °C Convect i on 235 +5/- 0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C
Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003
APM3040N
www.anpec.com.tw8
Re lia b ility test pro g ra m
Test item M ethod Descriptio n
SOLDERABILITY MIL-STD-883D-2003 245°C , 5 SEC
HOLT MIL-STD-883D-1005.7 1000 Hrs Bias @ 125 °C
PCT JESD-22-B, A102 168 Hrs, 100 % RH , 121°C
TST MIL-STD-883D-1011.9 -65°C ~ 150°C , 200 C ycles
ESD M IL-STD-883D-3015.7 VHBM > 2KV, VM M > 200V
L a tc h-Up J E SD 78 1 0 ms , Itr > 100m A
Carrier Tape
A
J
B
T2
T1
C
t
Ao
E
W
Po P
Ko
Bo
D1
D
F
P1
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003
APM3040N
www.anpec.com.tw9
A pplication A B C J T1 T2 W P E
178 ±1 70 ± 2 13.5 ± 0.15 3 ± 0.15 14 ± 2 1.3 ± 0.3 12 + 0.3
12 - 0.1 8 ± 0.1 1.75± 0.1
F D D1 Po P1 Ao Bo Ko t
SOT-89
5.5 ± 0.05 1.5± 0.1 1.5± 0.1 4.0 ± 0.1 2.0 ± 0.1 4.8 ± 0.1 4.5± 0.1 1.80± 0.1 0.3±0.013
Application Carrier Width Cover Tape Width Devices Per Reel
SOT- 89 12 9.3 1000
Cover Tape Dimensions
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin T ien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
