Document Number: 69066 www.vishay.com
S11-1089-Rev. D, 13-Jun-11 1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
SQR50N06-07L
Vishay Siliconix
FEATURES
•Halogen-free According to IEC 61249-2-21
Definition
•TrenchFET
® Power MOSFET
• Package with Low Thermal Resistance
• 100 % Rg and UIS Tested
• AEC-Q101 Qualifiedd
• Compliant to RoHS Directive 2002/95/EC
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
PRODUCT SUMMARY
VDS (V) 60
RDS(on) () at VGS = 10 V 0.0076
RDS(on) () at VGS = 4.5 V 0.009
ID (A) 50
Configuration Single
D
G
S
N-Channel MOSFET
TO-252
Reverse Lead DPAK
Top View
Drain Connected to Tab
S
GD
ORDERING INFORMATION
Package TO-252 Reverse Lead DPAK
Lead (Pb)-free and Halogen-free SQR50N06-07L-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ± 20
Continuous Drain CurrentaTC = 25 °C ID
50
A
TC = 125 °C 50
Continuous Source Current (Diode Conduction)aIS50
Pulsed Drain CurrentbIDM 200
Single Pulse Avalanche Current L = 0.1 mH IAS 48
Single Pulse Avalanche Energy EAS 115 mJ
Maximum Power DissipationbTC = 25 °C PD
136 W
TC = 125 °C 45
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB MountcRthJA 50 °C/W
Junction-to-Case (Drain) RthJC 1.1
www.vishay.com Document Number: 69066
2S11-1089-Rev. D, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQR50N06-07L
Vishay Siliconix
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 60 - - V
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5
Gate-Source Leakage IGSS V
DS = 0 V, VGS = ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VGS = 0 V VDS = 60 V - - 1.0
μA VGS = 0 V VDS = 60 V, TJ = 125 °C - - 50
VGS = 0 V VDS = 60 V, TJ = 175 °C - - 250
On-State Drain Currenta I
D(on) V
GS = 10 V VDS5 V 50 - - A
Drain-Source On-State Resistancea R
DS(on)
VGS = 10 V ID = 20 A - 0.0064 0.0076
VGS = 10 V ID = 20 A, TJ = 125 °C - - 0.0130
VGS = 10 V ID = 20 A, TJ = 175 °C - - 0.0160
VGS = 4.5 V ID = 20 A - 0.0078 0.0090
Forward Transconductancebgfs VDS = 15 V, ID = 20 A - 82 - S
Dynamicb
Input Capacitance Ciss
VGS = 0 V VDS = 25 V, f = 1 MHz
- 4455 5570
pF Output Capacitance Coss - 407 510
Reverse Transfer Capacitance Crss - 223 280
Total Gate ChargecQg
VGS = 10 V VDS = 30 V, ID = 50 A
- 80 120
nC Gate-Source ChargecQgs - 11.1 -
Gate-Drain ChargecQgd - 15.7 -
Gate Resistance Rg f = 1 MHz 1 2 3
Turn-On Delay Timectd(on)
VDD = 30 V, RL = 0.6
ID 50 A, VGEN = 10 V, Rg = 1
-1218
ns
Rise Timectr -1320
Turn-Off Delay Timectd(off) -4263
Fall Timectf -711
Source-Drain Diode Ratings and Characteristicsb
Pulsed CurrentaISM - - 200 A
Forward Voltage VSD IF = 20 A, VGS = 0 V - 0.85 1.5 V
Document Number: 69066 www.vishay.com
S11-1089-Rev. D, 13-Jun-11 3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQR50N06-07L
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Transfer Characteristics
Transconductance
Capacitance
0
20
40
60
80
100
120
0 3 6 9 12 15
ID- Drain Current (A)
VDS-Drain-to-Source Voltage (V)
V
GS
= 10 V thru 4 V
VGS = 3 V
0.0
0.2
0.4
0.6
0.8
1.0
1.2
012345
ID- Drain Current (A)
VGS -Gate-to-Source Voltage (V)
TC= 25 °C
T
C
= 125 °CTC= - 55 °C
0.000
0.005
0.010
0.015
0.020
0.025
0 20 40 60 80 100
RDS(on) -On-Resistance (Ω)
ID-Drain Current (A)
VGS = 4.5 V
V
GS
= 10 V
0
20
40
60
80
100
120
0 1 2 3 4 5
ID- Drain Current (A)
VGS -Gate-to-Source Voltage (V)
T
= 25 °C
T
C
= 125 °CTC= - 55 °C
0
30
60
90
120
150
0 10 20 30 40 50
gfs-Transconductance (S)
ID- Drain Current (A)
TC= 25 °C
T
C
= 125 °C
TC= - 55 °C
0
1000
2000
3000
4000
5000
6000
0 10 20 30 40 50 60
C - Capacitance (pF)
VDS-Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
www.vishay.com Document Number: 69066
4S11-1089-Rev. D, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQR50N06-07L
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Gate Charge
Source Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Drain Source Breakdown vs. Junction Temperature
0
2
4
6
8
10
0 20 40 60 80 100
VGS -Gate-to-Source Voltage (V)
Qg-Total Gate Charge (nC)
ID= 50 A
V
DS
= 30 V
0.001
0.01
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS-Source Current (A)
VSD-Source-to-Drain Voltage (V)
TJ= 150 °C
TJ= 25 °C
-1.5
-1.1
-0.7
-0.3
0.1
0.5
- 50 - 25 0 25 50 75 100 125 150 175
VGS(th) Variance (V)
TJ-Temperature (°C)
I
D
= 250 μA
I
D
= 5 mA
0.5
0.8
1.1
1.4
1.7
2.0
2.3
- 50 - 25 0 25 50 75 100 125 150 175
RDS(on) -On-Resistance
(Normalized)
TJ- Junction Temperature (°C)
ID= 20 A
V
GS
= 10 V
VGS = 4.5 V
0.00
0.01
0.02
0.03
0.04
0.05
0246810
RDS(on) -On-Resistance (Ω)
VGS -Gate-to-Source Voltage (V)
TJ= 150 °C
TJ= 25 °C
60
64
68
72
76
80
- 50 - 25 0 25 50 75 100 125 150 175
VDS-Drain-to-Source Voltage (V)
TJ- Junction Temperature (°C)
ID= 10 mA
Document Number: 69066 www.vishay.com
S11-1089-Rev. D, 13-Jun-11 5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQR50N06-07L
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 100
ID- Drain Current (A)
VDS-Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specied
100 ms
Limited by R
DS(on)
*
1 ms
IDM Limited
TC= 25 °C
Single Pulse
BVDSS Limited
10 ms
100 μs
1 s, 10 s, DC
I
D
Limited
Square Wave Pulse Duration (s)
2
1
0.1
0.01
10-4 10-3 10-2 10-1 10
Normalized Effective Transient
Thermal Impedance
1000
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
1001
www.vishay.com Document Number: 69066
6S11-1089-Rev. D, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQR50N06-07L
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69066.
Square Wave Pulse Duration (s)
2
1
0.1
0.01
10 -4 10 -3 10 -2 10 -1 10
Normalized Effective Transient
Thermal Impedance
100
0.2
0.1
Duty Cycle = 0.5
1
0.02
0.05
Single Pulse
Document Number: 72206 www.vishay.com
29-Sep-08 1
Package Information
Vishay Siliconix
TO-252 REVERSE LEAD CASE OUTLINE
Note
Dimension L3 for reference only.
L2
D
L1
L3
bb1
E1
D1
E1
A1
C
gage plane
height (0.020)
e
e1
b2
EC1
A
L
H
A2
MILLIMETERS INCHES
DIM. MIN. MAX. MIN. MAX.
A 2.23 2.33 0.088 0.092
A10.64 0.89 0.025 0.035
A20.03 0.23 0.001 0.009
b 0.71 0.88 0.028 0.035
b10.76 1.14 0.030 0.045
b25.23 5.44 0.206 0.214
C 0.46 0.58 0.018 0.023
C10.46 0.58 0.018 0.023
D 5.97 6.22 0.235 0.245
D14.49 5.00 0.177 0.197
E 6.48 6.73 0.255 0.265
E14.32 - 0.170 -
e 2.28 BSC 0.090 BSC
e14.57 BSC 0.180 BSC
H 9.65 10.41 0.380 0.410
L 1.40 1.78 0.055 0.070
L12.74 BSC 0.108 BSC
L20.89 1.27 0.035 0.050
L31.15 1.52 0.040 0.060
ECN: T-08706-Rev. B, 29-Sep-08
DWG: 5894
Legal Disclaimer Notice
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Revision: 12-Mar-12 1Document Number: 91000
Disclaimer
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