LESHAN RADIO COMPANY, LTD.
G24–1/2
1
3
2
MMBD7000LT1
MAXIMUM RATINGS(EACH DIODE)
Rating Symbol Value Unit
Reverse Voltage V R100 Vdc
Forward Current I F200 mAdc
Peak Forward Surge Current I FM(surge) 500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board (1) P D 225 mW
T A = 25°C
Derate abo ve 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R θ JA 556 °C/W
Total Device Dissipation P D300 mW
Alumina Substrate, (2) T A = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R θ JA 417 °C/W
Junction and Storage Temperature T J , T stg –55 to +150 °C
DEVICE MARKING
MMBD7000L T1 = M5C
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)(EACH DIODE)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage V (BR) 100 — Vdc
(I (BR) = 100 µAdc)
Reverse Voltage Leakage Current µAdc
(V R = 50 Vdc) I R— 1.0
(V R = 100 Vdc) I R2 — 3.0
(V R = 50 Vdc,125°C) I R3 — 100
Forward Voltage V F Vdc
(I F = 1.0 mAdc) 0.55 0.7
(I F = 10 mAdc) 0.67 0.82
(I F = 100 mAdc) 0.75 1.1
Reverse Recovery Time t rr — 4.0 ns
(I F = I R = 10 mAdc) (Figure 1)
Capacitance(VR=0V) C — 1.5 pF
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Dual Switching Diode
CASE 318–08, STYLE11
SOT– 23 (TO–236AB)
3
CATHODE/ANODE
1
ANODE
2
CATHODE