PE42553
Document Category: Product Specification
UltraCMOS® SPDT RF Switch, 9 kHz–8 GHz
©2016, 2018 pSemi Corporation. All rights reserved. • Headquarters: 9369 Carroll Park Drive, San Diego, CA, 92121
Product Specification DOC-76991-2 – (11/2018)
www.psemi.com
Features
• Excellent power handling: 36 dBm CW and 38 dBm
pulsed power in 50Ω @ 8 GHz
• High linearity: IIP3 of 66 dBm
• High isolation
▪45 dB @ 3 GHz
▪41 dB @ 8 GHz
• HaRP™ technology enhanced
▪Fast settling time
▪No gate and phase lag
▪No drift in insertion loss and phase
• High ESD performance
▪2.5 kV HBM on all pins, 4 kV HBM on RF pins to
GND
▪1 kV CDM on all pins
• Packaging – 16-lead 3 × 3 mm QFN
Applications
• Test and measurement
▪Signal sources
▪Communication testers
▪Spectrum analyzers
▪Network analyzers
• Automated test equipment
• General purpose TX/RX switch
Product Description
The PE42553 is a HaRPTM technology-enhanced absorptive SPDT RF switch that supports a broad frequency
range from 9 kHz to 8 GHz. This general purpose switch maintains excellent linearity, high RF performance and
fast settling time making this device ideal for test and measurement (T&M), automated test equipment (ATE)
and other high performance wireless applications.
The PE42553 is a pin-compatible version of the PE42552 with improved power handling capability of 36 dBm
continuous wave (CW) and 38 dBm pulsed power in 50Ω at 8 GHz. No blocking capacitors are required if DC
voltage is not present on the RF ports. The PE42553 is manufactured on pSemi’s UltraCMOS® process, a
patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate.
Figure 1 • PE42553 Functional Diagram
RFC
50Ω 50Ω
CMOS Control Driver and ESD
RF2RF1
LS CTRL VSS_EXT
PE42553
SPDT RF Switch
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pSemi’s HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an
innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and
integration of conventional CMOS.
Optional External VSS
For proper operation, the VSS_EXT pin must be grounded or tied to the VSS voltage specified in Table 2. When the
VSS_EXT pin is grounded, FETs in the switch are biased with an internal negative voltage generator. For applica-
tions that require the lowest possible spur performance, VSS_EXT can be applied externally to bypass the internal
negative voltage generator.
Absolute Maximum Ratings
Exceeding absolute maximum ratings listed in Table 1 may cause permanent damage. Operation should be
restricted to the limits in Table 2. Operation between operating range maximum and absolute maximum for
extended periods may reduce reliability.
ESD Precautions
When handling this UltraCMOS device, observe the same precautions as with any other ESD-sensitive devices.
Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to
avoid exceeding the rating specified in Table 1.
Latch-up Immunity
Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up.
Table 1 • Absolute Maximum Ratings for PE42553
Parameter/Condition Min Max Unit
Supply voltage, VDD –0.3 5.5 V
Digital input voltage, CTRL –0.3 3.6 V
LS input voltage –0.3 3.6 V
RF input power, CW (RFC–RFX)(1)
9 kHz–10 MHz
>10 MHz–8 GHz
Fig. 2, Fig. 3
37
dBm
dBm
RF input power, pulsed (RFC–RFX)(2)
9 kHz–10 MHz
>10 MHz–8 GHz
Fig. 2, Fig. 3
Fig. 4, Fig. 5
dBm
dBm
RF input power into terminated ports, CW (RFX)(1)
9–800 kHz
>800 kHz–8 GHz
Fig. 2, Fig. 3
28
dBm
dBm
Maximum junction temperature +150 °C
Storage temperature range –65 +150 °C
DOC-76991-2 – (11/2018) Page 3 of 20
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PE42553
SPDT RF Switch
ESD voltage HBM(3)
RF pins to GND
All pins
4000
2500
V
V
ESD voltage MM, all pins(4) 200 V
ESD voltage CDM, all pins(5) 1000 V
Notes:
1) 100% duty cycle, all bands, 50Ω.
2) Pulsed, 5% duty cycle of 4620 μs period, 50Ω.
3) Human body model (MIL-STD 883 Method 3015).
4) Machine model (JEDEC JESD22-A115).
5) Charged device model (JEDEC JESD22-C101).
Table 1 • Absolute Maximum Ratings for PE42553
Parameter/Condition Min Max Unit
PE42553
SPDT RF Switch
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Recommended Operating Conditions
Table 2 list the recommending operating condition for PE42553. Devices should not be operated outside the
recommended operating conditions listed below.
Table 2 • Recommended Operating Condition for PE42553
Parameter Min Typ Max Unit
Normal mode (VSS_EXT = 0V)(1)
Supply voltage, VDD 2.3 5.5 V
Supply current, IDD 120 200 μA
Bypass mode (VSS_EXT = –3.4V, VDD ≥ 3.4V for full spec. compliance)(2)
Supply voltage, VDD 2.6 3.4 5.5 V
Supply current, IDD 50 80 μA
Negative supply voltage, VSS_EXT –3.6 –2.6 V
Negative supply current, ISS –40 –16 μA
Normal or Bypass mode
Digital input high, CTRL 1.17 3.6 V
Digital input low, CTRL –0.3 0.6 V
Digital input current, ICTRL 10 μA
RF input power, CW (RFC–RFX)(3)
9 kHz–10 MHz
>10 MHz–8 GHz
Fig. 2, Fig. 3
36
dBm
dBm
RF input power, pulsed (RFC–RFX)(4)
9 kHz–10 MHz
>10 MHz–8 GHz
Fig. 2, Fig. 3
Fig. 4, Fig. 5
dBm
dBm
RF input power, hot switch, CW(3)
9–300 kHz
>300 kHz–8 GHz
Fig. 2, Fig. 3
20
dBm
dBm
RF input power into terminated ports, CW (RFX)(3)
9–600 kHz
>600 kHz–8 GHz
Fig. 2, Fig. 3
26
dBm
dBm
Operating temperature range –40 +25 +85 °C
Notes:
1) Normal mode: connect VSS_EXT (pin 13) to GND (VSS_EXT = 0V) to enable internal negative voltage generator.
2) Bypass mode: use VSS_EXT (pin 13) to bypass and disable internal negative voltage generator.
3) 100% duty cycle, all bands, 50Ω.
4) Pulsed, 5% duty cycle of 4620 μs period, 50Ω.
DOC-76991-2 – (11/2018) Page 5 of 20
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PE42553
SPDT RF Switch
Electrical Specifications
Table 3 provides the PE42553 key electrical specifications at 25 °C (ZS = ZL = 50Ω), unless otherwise specified.
Normal mode(1) is at VDD = 3.3V and VSS_EXT = 0V. Bypass mode(2) is at VDD = 3.4V and VSS_EXT = –3.4V.
Table 3 • PE42553 Electrical Specifications
Parameter Path Condition Min Typ Max Unit
Operating frequency 9 kHz 8 GHz As
shown
Insertion loss RFC–RFX
9 kHz–10 MHz
10 MHz–3 GHz
3–8 GHz
0.60
0.80
0.85
0.80
1.00
1.05
dB
dB
dB
Isolation
RFX–RFX
9 kHz–10 MHz
10 MHz–3 GHz
3–8 GHz
70
46
33
90
54
36
dB
dB
dB
RFC–RFX
9 kHz–10 MHz
10 MHz–3 GHz
3–8 GHz
80
42
38
90
45
41
dB
dB
dB
Return loss (active port) RFC–RFX
9 kHz–10 MHz
10 MHz–3 GHz
3–8 GHz
23
17
15
dB
dB
dB
Return loss
(RFC port) RFC–RFX
9 kHz–10 MHz
10 MHz–3 GHz
3–8 GHz
23
17
15
dB
dB
dB
Return loss
(terminated port) RFX
9 kHz–10 MHz
10 MHz–3 GHz
3–8 GHz
32
24
19
dB
dB
dB
Input 0.1dB compression
point(3) RFC–RFX 10 MHz–8 GHz Fig. 4
Fig. 5
dBm
dBm
Input IP2 RFC–RFX 834 MHz, 1950 MHz 120 dBm
Input IP3 RFC–RFX 834 MHz, 1950 MHz and 2700 MHz 66 dBm
Settling time 50% CTRL to 0.05 dB final value 15 20 μs
Switching time 50% CTRL to 90% or 10% of RF 5.5 9.5 μs
Notes:
1) Normal mode: connect VSS_EXT (pin 29) to GND (VSS_EXT = 0V) to enable internal negative voltage generator.
2) Bypass mode: use VSS_EXT (pin 29) to bypass and disable internal negative voltage generator.
3) The input 0.1dB compression point is a linearity figure of merit. Refer to Table 2 for the RF input power (50Ω).
PE42553
SPDT RF Switch
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Switching Frequency
The PE42553 has a maximum 25 kHz switching rate
in normal mode (pin 13 tied to ground). A faster
switching rate is available in bypass mode (pin 13 tied
to VSS_EXT). The rate at which the PE42553 can be
switched is then limited to the switching time as
specified in Table 3.
Switching frequency describes the time duration
between switching events. Switching time is the time
duration between the point the control signal reached
50% of the final value and the point the output signal
reaches within 10% or 90% of its target value.
Spur-Free Performance
The typical spurious performance of the PE42553 in
normal mode is –152 dBm (pin 13 tied to ground). If
spur-free performance is desired, the internal
negative voltage generator can be disabled by
applying a negative voltage to VSS_EXT (pin 13).
Thermal Data
Psi-JT (JT), junction top-of-package, is a thermal
metric to estimate junction temperature of a device on
the customer application PCB (JEDEC JESD51-2).
JT = (TJ – TT)/P
where
JT = junction-to-top of package characterization
parameter, °C/W
TJ = die junction temperature, °C
TT = package temperature (top surface, in the
center), °C
P = power dissipated by device, Watts
Control Logic
Table 5 provides the control logic truth table for the
PE42553.
Logic Select
The Logic Select feature is used to determine the
definition for the CTRL pin.
Table 4 • Thermal Data for PE42553
Parameter Typ Unit
JT 41 °C/W
JA, junction-to-ambient thermal resistance 93 °C/W
Table 5 • Truth Table for PE42553
LS CTRL RFC–RF1 RFC–RF2
0 0 OFF ON
0 1 ON OFF
1 0 ON OFF
1 1 OFF ON
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PE42553
SPDT RF Switch
Figure 2 • Power De-rating Curve for 9 kHz–10 MHz @ 25 °C Ambient (50Ω)(*)
Note: * VSS_EXT = –VDD.
Figure 3 • Power De-rating Curve for 9 kHz–10 MHz @ 85 °C Ambient (50Ω)(*)
Note: * VSS_EXT = –VDD.
0
5
10
15
20
25
30
35
40
1 10 100 1000 10000
Input Power (dBm)
Frequency (kHz)
2.6 Vdd 2.8 Vdd 3.0 Vdd 3.2 Vdd 3.4 Vdd
0
5
10
15
20
25
30
35
40
1 10 100 1000 10000
Input Power (dBm)
Frequency (kHz)
2.6 VDD 2.8 VDD 3.0 VDD 3.2 VDD 3.4 VDD
PE42553
SPDT RF Switch
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Figure 4 • Power De-rating Curve for 10 MHz–8 GHz @ 25 °C Ambient (50Ω)(*)
Note: * Normal mode at 2.3V ≥ VDD ≥ 5.5V and VSS_EXT = 0V, Bypass mode at VDD = 3.4V and VSS_EXT = –3.4V.
Figure 5 • Power De-rating Curve for 10 MHz–8 GHz @ 85 °C Ambient (50Ω)(*)
Note: * Normal mode at 2.3V ≥ VDD ≥ 5.5V and VSS_EXT = 0V, Bypass mode at VDD = 3.4V and VSS_EXT = –3.4V.
34.5
35
35.5
36
36.5
37
37.5
38
38.5
39
39.5
40
40.5
41
41.5
012345678
Input Power (dBm)
Frequency (GHz)
P0.1dB Compression / Abs. Max. RF Input Power, Pulsed @ 25°C Ambient
Max. RF Input Power, Pulsed @ 25°C Ambient
Max. RF Input Power, CW @ 25°C Ambient
34.5
35
35.5
36
36.5
37
37.5
38
38.5
39
39.5
40
40.5
41
012345678
Input Power (dBm)
Frequency (GHz)
P0.1dB Compression / Abs. Max. RF Input Power, Pulsed @ 85°C Ambient
Max. RF Input Power, Pulsed @ 85°C Ambient
Max. RF Input Power, CW @ 85°C Ambient
DOC-76991-2 – (11/2018) Page 9 of 20
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PE42553
SPDT RF Switch
Typical Performance Data
Figure 6–Figure 17 show the typical performance data @ 25 °C and VDD = 3.4V (ZS = ZL = 50Ω), unless
otherwise specified.
Figure 6 • Insertion Loss vs Temperature (RFC–RFX)
0 1 2 3 4 5 6 7 8
Insertion Loss (dB)
Frequency (GHz)
− 4 0 ° C +25°C +85°C
−5
−4.5
−4
−3.5
−3
−2.5
−2
−1.5
−1
−0.5
0
PE42553
SPDT RF Switch
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Figure 7 • Insertion Loss vs VDD (RFC–RFX)
Figure 8 • RFC Port Return Loss vs Temperature
0 1 2 3 4 5 6 7 8
−5
−4.5
−4
−3.5
−3
−2.5
−2
−1.5
−1
−0.5
0
Insertion Loss (dB)
Frequency (GHz)
2.3V 3.4V 5.5V
0 1 2 3 4 5 6 7 8
−50
−45
−40
−35
−30
−25
−20
−15
−10
−5
0
Return Loss (dB)
Frequency (GHz)
− 4 0 ° C +25°C +85°C
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PE42553
SPDT RF Switch
Figure 9 • RFC Port Return Loss vs VDD
Figure 10 • Active Port Return Loss vs Temperature
0 1 2 3 4 5 6 7 8
−50
−45
−40
−35
−30
−25
−20
−15
−10
−5
0
Return Loss (dB)
Frequency (GHz)
2.3V 3.4V 5.5V
0 1 2 3 4 5 6 7 8
−50
−45
−40
−35
−30
−25
−20
−15
−10
−5
0
Return Loss (dB)
Frequency (GHz)
− 4 0 ° C +25°C +85°C
PE42553
SPDT RF Switch
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Figure 11 • Active Port Return Loss vs VDD
Figure 12 • Terminated Port Return Loss vs Temperature
0 1 2 3 4 5 6 7 8
−50
−45
−40
−35
−30
−25
−20
−15
−10
−5
0
Return Loss (dB)
Frequency (GHz)
2.3V 3.4V 5.5V
0 1 2 3 4 5 6 7 8
−50
−45
−40
−35
−30
−25
−20
−15
−10
−5
0
Return Loss (dB)
Frequency (GHz)
− 40C +25C +85C
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PE42553
SPDT RF Switch
Figure 13 • Terminated Port Return Loss vs VDD
Figure 14 • Isolation vs Temperature (RFX–RFX)
0 1 2 3 4 5 6 7 8
−50
−45
−40
−35
−30
−25
−20
−15
−10
−5
0
Return Loss (dB)
Frequency (GHz)
2.3V 3.4V 5.5V
0 1 2 3 4 5 6 7 8
−100
−90
−80
−70
−60
−50
−40
−30
−20
−10
0
Frequency (GHz)
Isolation (dB)
− 4 0 ° C +25°C +85°C
PE42553
SPDT RF Switch
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Figure 15 • Isolation vs VDD (RFX–RFX)
Figure 16 • Isolation vs Temperature (RFC–RFX)
0 1 2 3 4 5 6 7 8
−100
−90
−80
−70
−60
−50
−40
−30
−20
−10
0
Frequency (GHz)
Isolation (dB)
2.3V 3.4V 5.5V
0 1 2 3 4 5 6 7 8
−100
−90
−80
−70
−60
−50
−40
−30
−20
−10
0
Frequency (GHz)
Isolation (dB)
−40°C +25°C +85°C
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PE42553
SPDT RF Switch
Figure 17 • Isolation vs VDD (RFC–RFX)
0 1 2 3 4 5 6 7 8
−100
−90
−80
−70
−60
−50
−40
−30
−20
−10
0
Frequency (GHz)
Isolation (dB)
2.3V 3.4V 5.5V
PE42553
SPDT RF Switch
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Evaluation Kit
The SPDT switch evaluation board was designed to ease customer evaluation of pSemi’s PE42553. The RF
common port is connected through a 50Ω transmission line via the SMA connector, J1. RF1 and RF2 ports are
connected through 50Ω transmission lines via SMA connectors J2 and J3, respectively. A 50Ω through trans-
mission line is available via SMA connectors J5 and J6, which can be used to de-embed the loss of the PCB. J4
provides DC and digital inputs to the device.
For the true performance of the PE42553 to be realized, the PCB must be designed in such a way that RF trans-
mission lines and sensitive DC I/O traces are well isolated from one another.
Figure 18 • Evaluation Kit Layout for PE42553
DOC-76991-2 – (11/2018) Page 17 of 20
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PE42553
SPDT RF Switch
Pin Information
This section provides pinout information for the
PE42553. Figure 19 shows the pin map of this device
for the available package. Table 6 provides a
description for each pin.
Figure 19 • Pin Configuration (Top View)
Exposed
Ground Pad
GND
RF1
GND
GND
GND
GND
RFC
GND
GND
RF2
GND
GND
VDD
LS
CTRL
VSS_EXT
1
3
2
4
12
10
11
9
5
7
6
8
16
14
15
13
Pin 1 Dot
Marking
Table 6 • Pin Descriptions for PE42553
Pin No. Pin
Name Description
1, 3–6,
8–10, 12 GND Ground
2RF1(1) RF port 1
7RFC(1) RF common
11 RF2(1) RF port 2
13 VSS_EXT(2) External VSS negative voltage control
14 CTRL Digital control logic input
15 LS
Logic Select: used to determine the
definition for the CTRL pin (see
Table 5)
16 VDD Supply voltage
Pad GND Exposed pad: ground for proper oper-
ation
Notes:
1) RF pins 2, 7 and 11 must be at 0 VDC. The RF pins do not require
DC blocking capacitors for proper operation if the 0 VDC
requirement is met.
2) Use VSS_EXT (pin 13) to bypass and disable internal negative
voltage generator. Connect VSS_EXT (pin 13) to GND (VSS_EXT =
0V) to enable internal negative voltage generator.
PE42553
SPDT RF Switch
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Packaging Information
This section provides packaging data including the moisture sensitivity level, package drawing, package
marking and tape-and-reel information.
Moisture Sensitivity Level
The moisture sensitivity level rating for the PE42553 in the 16-lead 3 × 3 mm QFN package is MSL3.
Package Drawing
Top-Marking Specification
Figure 20 • Package Mechanical Drawing for 16-lead 3 × 3 × 0.85 mm QFN
Figure 21 • Package Marking Specifications for PE42553
TOP VIEW
SIDE VIEW
BOTTOM VIEW
3.00
3.00
Pin #1 Corner
1.70±0.05
0.85±0.05
0.05
0.203
RECOMMENDED LAND PATTERN
13
16
1
4
5
9
8
12
1.70±0.05
0.50
0.25±0.05
(X16)
1.50
0.30±0.05
(X16)
1.75
3.75
3.75
0.10 CAB
0.05 C
A
0.10 C
(2X)
C
0.10 C
0.05 C
SEATING PLANE
B
ALL FEATURES
0.10 C
(2X)
0.750
(X16)
0.30
(X16) 0.50
1.75
(X12)
(X12)
=
YY =
WW =
ZZZZZZ =
Pin 1 indicator
Last two digits of assembly year
Assembly work week
Assembly lot code (maximum six characters)
42553
YYWW
ZZZZZZ
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PE42553
SPDT RF Switch
Tape and Reel Specification
Figure 22 • Tape and Reel Specifications for 16-lead 3 × 3 × 0.85 mm QFN
Direction of Feed
Device Orientation in Tape
Pin 1
Ao
Bo
Ko
F
P1
W
3.30 ± 0.1
3.30 ± 0.1
1.10 ± 0.1
5.50 ± 0.05
8.00 ± 0.1
12.00 ± 0.3
Notes:
1. Measured from centerline of sprocket hole to centerline of
pocket.
2. Cumulative tolerance of 10 sprocket holes ± 0.20.
3. Measured from centerline of sprocket hole to centerline of
sprocket.
Dimensions are in millimeters unless otherwise specified.
PE42553
Product Specification www.psemi.com DOC-76991-2 – (11/2018)
Document Categories
Advance Information
The product is in a formative or design stage. The datasheet contains design target specifications for product development. Specifications and
features may change in any manner without notice.
Preliminary Specification
The datasheet contains preliminary data. Additional data may be added at a later date. pSemi reserves the right to change specifications at any
time without notice in order to supply the best possible product.
Product Specification
The datasheet contains final data. In the event pSemi decides to change the specifications, pSemi will notify customers of the intended changes by
issuing a CNF (Customer Notification Form).
Sales Contact
For additional information, contact Sales at sales@psemi.com.
Disclaimers
The information in this document is believed to be reliable. However, pSemi assumes no liability for the use of this information. Use shall be entirely
at the user’s own risk. No patent rights or licenses to any circuits described in this document are implied or granted to any third party. pSemi’s
products are not designed or intended for use in devices or systems intended for surgical implant, or in other applications intended to support or
sustain life, or in any application in which the failure of the pSemi product could create a situation in which personal injury or death might occur.
pSemi assumes no liability for damages, including consequential or incidental damages, arising out of the use of its products in such applications.
Patent Statement
pSemi products are protected under one or more of the following U.S. patents: patents.psemi.com
Copyright and Trademark
©2016, 2018 pSemi Corporation. All rights reserved. The Peregrine Semiconductor name, Peregrine Semiconductor logo and UltraCMOS are
registered trademarks and the pSemi name, pSemi logo, HaRP and DuNE are trademarks of pSemi Corporation in the U.S. and other countries.
SPDT RF Switch
Ordering Information
Table 7 lists the available ordering codes for the PE42553 as well as available shipping methods.
Table 7 • Order Codes for PE42553
Order Codes Description Packaging Shipping Method
PE42553A-Z PE42553 SPDT RF switch Green 16-lead 3 × 3 mm QFN 3000 units / T&R
PE42553B-Z PE42553 SPDT RF switch Green 16-lead 3 × 3 mm QFN 3000 units / T&R
EK42553-01 PE42553 Evaluation kit Evaluation kit 1 / Box
EK42553-02 PE42553 Evaluation kit Evaluation kit 1 / Box
