1C3D10060G Rev. F
C3D10060G
Silicon Carbide Schottky Diode
Z-Rec® RectifieR
Features
• 600-VoltSchottkyRectier
• ZeroReverseRecoveryCurrent
• ZeroForwardRecoveryVoltage
• High-FrequencyOperation
• Temperature-IndependentSwitchingBehavior
• ExtremelyFastSwitching
• PositiveTemperatureCoefcientonVF
Benets
• ReplaceBipolarwithUnipolarRectiers
• EssentiallyNoSwitchingLosses
• HigherEfciency
• ReductionofHeatSinkRequirements
• ParallelDevicesWithoutThermalRunaway
• AEC-Q101QualiedandPPAPCapable
Applications
• SwitchModePowerSupplies
• PowerFactorCorrection
-TypicalPFCPout:1000W-2000W
• MotorDrives
-TypicalPower:3HP-5HP
Package
TO-263-2
PIN1
PIN2 CASE
Part Number Package Marking
C3D10060G TO-263-2 C3D10060
Maximum Ratings (TC=25˚Cunlessotherwisespecied)
Symbol Parameter Value Unit Test Conditions Note
VRRM RepetitivePeakReverseVoltage 600 V
VRSM SurgePeakReverseVoltage 600 V
VDC DCBlockingVoltage 600 V
IFContinuousForwardCurrent
29.5
14
10
A
TC=25˚C
TC=135˚C
TC=152˚C
IFRM RepetitivePeakForwardSurgeCurrent 67
44 ATC=25˚C,tP=10ms,HalfSineWave,D=0.3
TC=110˚C,tP=10ms,HalfSineWave,D=0.3
IFSM Non-RepetitivePeakForwardSurgeCurrent 90
71 ATC=25˚C,tP=10ms,HalfSineWave,D=0.3
TC=110˚C,tP=10ms,HalfSineWave,D=0.3
IFSM Non-RepetitivePeakForwardSurgeCurrent 250 A TC=25˚C,tP=10µs,Pulse
Ptot PowerDissipation 136
59 WTC=25˚C
TC=110˚C
TJ,Tstg OperatingJunctionandStorageTemperature -55to
+175 ˚C
VRRM = 600 V
IF (TC=135˚C) =14A
Qc = 25nC