DSEP 60-12A HiPerFREDTM Epitaxial Diode IFAV = 60 A VRRM = 1200 V trr = 40 ns with soft recovery VRSM VRRM V V 1200 1200 Type A C TO-247 AD C DSEP 60-12A A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 90C; rectangular, d = 0.5 IFSM TVJ = 45C; tp = 10 ms (50 Hz), sine EAS 70 60 A A 500 A TVJ = 25C; non-repetitive IAS = 14.5 A; L = 180 H 23 mJ VA = 1.25*VR typ.; f = 10 kHz; repetitive 1.5 A -55...+175 175 -55...+150 C C C 230 W Features IAR TVJ TVJM Tstg Ptot TC = 25C Md mounting torque Weight typical 0.8...1.2 6 Nm g Applications Symbol IR VF Conditions Characteristic Values typ. max. TVJ = 25C VR = VRRM TVJ = 150C VR = VRRM 650 2.5 mA mA IF = 60 A; 1.74 2.66 V V 0.65 K/W K/W TVJ = 150C TVJ = 25C RthJC RthCH 0.25 trr IF = 1 A; -di/dt = 300 A/ms; VR = 30 V; TVJ = 25C 40 IRM VR = 100 V; IF = 130 A; -diF/dt = 100 A/ms TVJ = 100C 7 ns A Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Pulse Width = 300 ms, Duty Cycle < 2.0 % Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages 14.3 International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see outlines.pdf IXYS reserves the right to change limits, test conditions and dimensions. (c) 2000 IXYS All rights reserved 008 Data according to IEC 60747 and per diode unless otherwise specified 1-2 http://store.iiic.cc/ DSEP 60-12A 100 10 A mC 80 Qr IF TVJ=150C TVJ=100C TVJ= 25C 60 100 TVJ= 100C VR = 600V 8 80 IRM IF= 120A IF= 60A IF= 30A 6 60 40 4 40 20 2 20 0 0 1 2 VF V 0 100 3 Fig. 1 Forward current IF versus VF 2.0 TVJ= 100C VR = 600V A IF= 120A IF= 60A IF= 30A 0 A/ms 1000 -diF/dt 0 200 400 ms 1000 600 A/ 800 -diF/dt Fig. 2 Reverse recovery charge Qr versus -diF/dt Fig. 3 Peak reverse current IRM versus -diF/dt 280 120 TVJ= 100C VR = 600V ns 1.2 TVJ= 100C IF = 60A V VFR trr 1.5 Kf 240 1.0 I RM 200 0.5 tfr tfr 80 IF= 120A IF= 60A IF= 30A s 0.8 V FR 40 0.4 Qr 0.0 160 0 40 80 120 C 160 0 TVJ 200 400 800 A/ ms 1000 600 0 0 200 400 -diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ Fig. 5 Recovery time trr versus -diF/dt 1 0.0 ms 1000 600 A/ 800 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i ZthJC 1 2 3 Rthi (K/W) ti (s) 0.324 0.125 0.201 0.0052 0.0003 0.038 0.1 0.01 0.0001 DSEP 60-12A 0.001 0.01 0.1 s 1 10 t 914 Fig. 7 Transient thermal resistance junction to case NOTE: Fig. 2 to Fig. 6 shows typical values (c) 2000 IXYS All rights reserved 2-2 http://store.iiic.cc/