D a t a B o o k , J a n. 20 0 1 GaAs Components N e v e r s t o p t h i n k i n g . Edition 2001-01-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 Munchen, Germany (c) Infineon Technologies AG 2001. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide. Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Da ta B oo k, J an . 2 00 1 GaAs Data Book GaAs Components N e v e r s t o p t h i n k i n g . GaAs Data Book Revision History: 2001-01-01 V1.0 Previous Version: Page Subjects (major changes since last revision) For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies Companies and Representatives worldwide: see our webpage at http://www.infineon.com GaAs Components Table of Contents Page 1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 Selection Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.7.1 3.7.2 3.7.2.1 3.7.2.2 3.8 3.9 3.9.1 3.9.2 3.9.3 3.10 3.11 Technical Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Type Designation in Accordance with Pro Electron . . . . . . . . . . . . . . . . . . Notation of the Symbols and Terms Used (DIN 41 785) . . . . . . . . . . . . . . Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Alphanumerical List of the Symbols Used . . . . . . . . . . . . . . . . . . . . . . . . . Explanation of the Symbols and Terms Used . . . . . . . . . . . . . . . . . . . . . . Technical Explanations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Basic Transistor Configurations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Explanations of Important Electrical Characteristics . . . . . . . . . . . . . . . DC Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . RF Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . RF and AF Transistors and Diodes in SMD Packages . . . . . . . . . . . . . . . Temperature Measuring of Components Leads . . . . . . . . . . . . . . . . . . Permissible Total Power Dissipation in DC Operation . . . . . . . . . . . . . . Permissible Total Power Dissipation in Pulse Operation . . . . . . . . . . . . ESD (Electrostatic Discharge Sensitive Device) . . . . . . . . . . . . . . . . . . . . Standards . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 4.1 4.2 Quality Management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 Quality Assurance Agreements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 5 Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 6 Notes on Processing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 7 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70 8 Application Notes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80 9 Data Sheets: GaAs RF-Transistors, MMICs and Modules . . . . . . . . . .169 10 Data Sheets: Microwave Semiconductors . . . . . . . . . . . . . . . . . . . . . . .662 11 HiRel Discretes and Microwave Semiconductors . . . . . . . . . . . . . . . 713 12 Alphanumeric Type Index/Addresses. . . . . . . . . . . . . . . . . . . . . . . . . . .737 Data Book 1 12 12 13 14 14 18 25 25 25 27 27 29 30 31 33 33 34 35 35 V1.0, 2001-01-01 GaAs Components Introduction 1 Introduction Since 1975 Infineon Technologies (former Siemens Semiconductors) has been engaged in research and development of III-V semiconductor components and circuits. The world's first commercially available GaAs MMIC was created by Infineon Technologies in 1981. Continuing activities include development of materials, processes, models and circuits on the base of MESFET, HEMT and HBT active devices with 0.8, 0.5, 0.18 and 0.13 m gate lengths. Infineon Technologies has successfully designed discretes with fT up to 110 GHz and MMICs from 0.04 to 80 GHz operating frequency. Applications examples are L-band tuners, mobile communications, X-band TVSat and K-band radio links. Furthermore automotive, military and space applications like C-band phased array radar, X-band synthetic aperture radar or W-band cruise control systems and several general purpose broadband designs have been realized. Besides a family of discrete devices the GaAs group has designed low-noise amplifiers, power amplifiers, variable gain amplifiers, distributed amplifiers, phase shifters, SPDT switches, mixers, broadband tuners, oscillators, and more and more combinations of them up to multifunctional MMICs like complete receiver-, transmitter and transceivercircuits. Infineon Technologies investments into progressive technology equipment, software and hardware tools and state-of-the-art measuring equipment are optimum prerequisites for successful products resulting from in-house projects as well as from foundry customer inputs. The annual production rate for GaAs discrete devices and MMICs has reached a volume of 80 million (mostly SMD packaged) devices in 1999 and is driven by the commercial success especially of the DIOM (Double Implantation One Metallization) MESFET products. Beginning of 1999 the transfer from a 4" to a 6" wafer production line was started. Full 6" production was started in September 2000. The quality assurance for Infineon Technologies GaAs production is completely embedded in the Infineon Technologies semiconductor quality system. The TQM (Total Quality Management) philosophy introduced in 1991 targets the work towards total customer satisfaction with defined corporate objectives. The GaAs wafer line is qualified to internal and external standards (IS09001). Quality assurance for GaAs products is applied throughout the complete production chain. Qualified wafers from internally qualified suppliers are processed. The main processes and equipment are under SPC (Statistical Process Control). The quality of the products is checked by various standard process controls on wafer comprising DC test at different fabrication steps and including also HTS (High Temperature Storage) for all wafers. The process lines are thus under permanent process control. Data Book 2 V1.0, 2001-01-01 GaAs Components Introduction Besides the high volume markets where low-cost plastic packages are used, Infineon Technologies also offers the possibility to assemble the semiconductor dies in hermetically sealed packages to give HiRel standard products for professional applications. HiRel components are mainly provided for highly professional applications like radio links, military applications, sea cables, naval, air and space systems. Nevertheless, these components take full advantage of the mass production of wafers for the consumer and commercial markets. Infineon Technologies GaAs wafer fab and HiRel assembly line are ISO9001 qualified. Infineon Technologies discrete HEMTs and a range of other components are already available in space quality (ESA/SCC). Thus, the Infineon Technologies quality assurance system provides best quality not only for high volume devices but also for lower volume applications and customer runs. This edition of our data book provides the major electrical and mechanical specifications of our current GaAs Semiconductor product range. Further information on our product range is quickly available through the following resources: * through the Internet at: http://www.infineon.com/cgi/ecrm.dll/ecrm/scripts/prod_cat.jsp?oid=-8150 * on the Infineon products CD-ROM These media will be updated regularly and will provide you with further and more detailed information about new products, applications, Spice parameters and quality of our devices. For direct inquiries regarding technology, pricing, availability and export approval, please contact your nearest Infineon Technologies office or one of our distributors near you. Addresses are listed at the back of this data book. Data Book 3 V1.0, 2001-01-01 GaAs Components Selection Guide 2 Selection Guide GaAs RF-Transistors, MMICs and Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 AIGaAs/InGaAs HEMTs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 GaAs Power FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 GaAs Broadband Amplifiers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Low Noise Preamplifiers for Mobile Communications . . . . . . . . . . . . . . . . . . . . . . . . . 7 Integrated Power Amplifiers for Mobile Communications . . . . . . . . . . . . . . . . . . . . . . . 8 Variable Gain Driver Amplifiers for Mobile Communications . . . . . . . . . . . . . . . . . . . . 9 Power Amplifier Modules for Mobile Communications . . . . . . . . . . . . . . . . . . . . . . . . . .9 Peripheral Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 Mixer + Receiver ICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 RF-Switches . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Data Book 4 V1.0, 2001-01-01 GaAs Components Selection Guide GaAs RF-Transistors, MMICs and Modules Table 1 Type Dual-Gate GaAs FETs Characteristics (TA = 25 C) Description Package IDS VDS f NF GPS mA V GHz dB dB CF 739 N-channel Dual-Gate GaAs MESFET 10 10 5 5 1.75 0.8 1.8 1.1 17 22 SOT-143 CF 750 Biased Dual-Gate GaAs FET for frequencies from 400 MHz to 3 GHz 2 2 3.8 3.8 1.8 0.9 1.9 1.6 10 11 SOT-143 Table 2 Type GaAs FETs Characteristics (TA = 25 C) Description Package IDS VDS f gm NF GA mA V GHz mS dB dB CFY 30 Low Noise, High Gain GaAs FET 15 15 3.5 3.5 4 6 30 30 1.4 2.0 11.5 8.9 SOT-143 CFY 35-20 Low Noise, High Gain GaAs FET 10 2.5 12 30 1.9 8.5 MW-4 CFY 35-23 Low Noise, High Gain GaAs FET 10 2.5 12 30 2.2 8.5 MW-4 Table 3 Type AIGaAs/InGaAs HEMTs Characteristics (TA = 25 C) Description Package IDS VDS f gm NF GA mA V GHz mS dB dB CFH 120-08 Low Noise pseudomorphic HEMT with high associated gain 10 2 12 60 0.65 12 MW-4 CFH 120-10 Low Noise pseudomorphic HEMT with high associated gain 10 2 12 60 0.85 11 MW-4 CFH 400 Low Noise, High Gain P-HEMT 10 15 3 3 1.8 1.8 100 100 0.55 0.53 15.7 16.2 SOT-343 CFH 400T Low Noise, High Gain P-HEMT 10 15 3 3 1.8 1.8 100 100 0.55 0.55 15.8 16.2 TSFP-4 Data Book 5 V1.0, 2001-01-01 GaAs Components Selection Guide Table 3 Type AIGaAs/InGaAs HEMTs (cont'd) Characteristics (TA = 25 C) Description Package IDS VDS f gm NF GA mA V GHz mS dB dB CFH 800 Low Noise, High Gain P-HEMT 10 30 3 3 1.8 1.8 200 200 0.58 0.50 12.8 15.3 SOT-343 CFH 800T Low Noise, High Gain P-HEMT 10 30 3 3 1.8 1.8 200 200 0.58 0.50 13.8 14.8 TSFP-4 New type Table 4 Type GaAs Power FETs Characteristics (TA = 25 C) Description Package IDS VDS f GP P- 1dB mA V GHz dB dBm CLY 2 Power Ampl. for frequencies up to 3 GHz 180 3 1.8 14.5 23.5 MW-6 CLY 5 Power Ampl. for 350 frequencies up to 2.5 GHz 3 1.8 9.5 26.5 SOT-223 CLY 10 Power Ampl. for 700 frequencies up to 2.5 GHz 3 1.8 8 28.5 SOT-223 CLY 151) Power Ampl. for 1400 frequencies up to 2.5 GHz 3 0.9 12 31.5 SOT-223 1) Pulsed operation Data Book 6 V1.0, 2001-01-01 GaAs Components Selection Guide Table 5 Type GaAs Broadband Amplifiers Characteristics (TA = 25 C) VDS = 4.5 V Description ID f G mA MHz dB Package G dB NF P- 1 dB dB dBm CGY 50 Single stage MMIC amplifier 100 MHz to 3 GHz 200 ... 1000 10.0 800 ... 1800 8.5 0.4 1.1 3.0 3.0 16 16 SOT-143 CGY 62 Two stage MMIC amplifier 130 200 ... 1800 19.0 2500 15.0 2.0 - 3.5 - 17.5 - MW-6 CGY 63 Two stage MMIC amplifier 100 800 ... 2500 20.0 1.0 3.0 21 SCT-595 60 New type Table 6 Type Low Noise Preamplifiers for Mobile Communications Characteristics (TA = 25 C) VDS = 3 V Description ID f mA MHz Package GP NF IP3INPUT P- 1 dB dB dB dBm dBm CGY 59W Single stage MMIC 6 amplifier 100 MHz to 3 GHz 950 1850 16.5 12.0 1.3 1.7 -4 1 5 4 SOT-363 CGY 60 Single stage MMIC 6 amplifier 100 MHz to 3 GHz with internal match to 50 at 1.7 ... 2 GHz 950 1850 15.5 12.5 1.35 1.9 - 3.0 0 5 5 MW-6 Data Book 7 V1.0, 2001-01-01 GaAs Components Selection Guide Table 7 Type Integrated Power Amplifiers for Mobile Communications Characteristics (TA = 25 C) Description Package ID VD f / Mode GP POUT PAE A V GHz dB dBm % HBT PA for 800 MHz 0.770 AMPS, CDMA and TDMA portable cellular phones 0.675 3.7 28 30 35 28 30 40 0.855 3.7 0.8 / cell. CDMA 0.8 / cell. TDMA 0.8 / AMPS 26 32 50 HBT PA for 1900 MHz 0.770 CDMA, TDMA and WCDMA portable cellular 0.845 phones 3.7 1.9/PCS- 28 CDMA 1.9/PCS- 28 TDMA 29 35 29 32 PA for BT, WLL 0.125 3.2 2.45 20 23.0 50 TSSOP-10 CGY 96 PA for GSM class 4 phones 1.8 3.5 0.88 0.915 33 35 50 MW-16 CGY 98 Broadband AMPS/GSM PA for GSM, AMPS or PCN 1.6 3.5 0.88 0.915 20 35 55 SCT-595 PCN 1.6 3.5 1.71 1.785 19 34 45 GSM - 3.5 0.88 0.915 30 35 55 PCN/ DCS - 3.5 1.71 1.785 29 34 45 27 35 MW-12 CGB 91 CGB 191 CGB 240 CGY 99 Broadband 3-stage PA for GSM, AMPS, PCN, PCS 3.7 3.7 VQFN-24-3 VQFN-24-3 TSSOP10-2 CGY 180 PA for DECT, PHS, WLL applications 0.45 3.0 1.89 27 CGY 195 Multiband PA for cordless 0.33 applications 3.3 1.89 23.5 26.5 42 SCT-595 CGY 196 PA for cordless applications 0.30 3.0 1.89 26 45 SCT-598 CGY 197 Multiband PA for cordless 0.29 applications 2.1 2.40 24.3 24.3 44 SCT-598 CGY 353 3-stage PA for 3.5 GHz 7 3.5 21 15 MW-16 1.2 26 31 New type Data Book 8 V1.0, 2001-01-01 GaAs Components Selection Guide Table 8 Type Variable Gain Driver Amplifiers for Mobile Communications Characteristics (TA = 25 C) Description Package ID VDS f Gmax G P- 1dB mA V GHz dB dB dBm CGY 121A Variable gain amplifier for GSM/PCN/CDMA applications 45 45 3 3 0.9 1.8 19 18.5 54 53 14 14 MW-6 CGY 121B Variable gain amplifier for GSM/PCN/CDMA applications 70 70 3 3 0.9 1.8 20.5 19.5 54 53 15 15 MW-6 Table 9 Type CGM 20G CGM 800C Power Amplifier Modules for Mobile Communications Characteristics (TA = 25 C) Description ID VD f / Mode GP POUT PAE A V dB dBm % Dual Band PA Module for GPRS class 12 900/1800 MHz 1.68 3.2 800 - 915/ 31.3 34.3 GSM 3.2 1710 - 1785/ 29.5 32.5 PCN 50 HBT PA Module for 800 MHz AMPS, CDMA and TDMA portable cellular phones 0.770 3.7 824 - 849/ cell. CDMA 3.7 824 - 849/ cell. TDMA 3.7 824 - 849/ AMPS 1.29 0.675 0.855 CGM 1900C HBT PA Module for 1900 MHz CDMA and TDMA portable cellular phones Table 10 Type Package 0.770 0.845 MHz C-MMAxx-y 43 28 30 35 28 30 40 26 32 50 3.7 1850 - 1910/ 28 PCS-CDMA 3.7 1850 - 1910/ 28 PCS-TDMA 29 35 29 32 LTCCModule LTCCModule Peripheral Devices Characteristics (TA = 25 C) Description VIN VOUT IOUT V V Package Ino-load supply A PAE % mA BGV 503 Negative Voltage Generator 3.0 - 2.5 3.0 76 0.4 TSSOP10-1 BGV 903 Negative Voltage Generator 3.0 - 4.1 3.0 72 0.9 TSSOP10-1 New type Data Book 9 V1.0, 2001-01-01 GaAs Components Selection Guide Table 11 Type Mixer and Receiver ICs Characteristics (TA = 25 C) Description Package IOP VD PLO Freq. Range / Mode GC IP3INPUT NF mA V dB dBm dBm MHz dB CMH 0819 High-linearity 17 integrated receiver for Tri-mode CDMA applications 13 2.7 - 7 fRF = 869 - 894 26.51) - 9.81) fLO = 919 - 1144 fIF = 50 - 250 / cell. CDMA 2.7 - 7 fRF = 869 - 894 fLO = 919 - 1144 fIF = 50 - 250 / AMPS 20.51) - 6.81) 2.41) 17 2.7 - 7 fRF = 1930 - 1990 26.51) - 9.81) fLO = 1980 - 2240 fIF = 50 - 250 / PCS CDMA 1.81) High-linearity integrated receiver for cellular CDMA/ AMPS applications 22 2.7 - 7 fRF = 869 - 894 24.01) - 4.61) fLO = 919 - 1144 fIF = 50 - 250 / cell. CDMA 1.81) VQFN-20 16 2.7 - 7 fRF = 869 - 894 fLO = 919 - 1144 fIF = 50 - 250 / AMPS 20.31) - 5.11) 2.01) High-linearity integrated receiver for PCS CDMA applications 22 2.7 - 7 fRF = 1930 - 1990 fLO = 1980 - 2240 fIF = 50 - 250 / 24.01) - 4.61) 1.81) VQFN-20 Integrated receiver for cellular CDMA applications 14 3.0 - 10 fRF = 600 - 1000 22.51) - 2.51) fLO = 500 - 1500 fIF = 45 - 250 / cell. CDMA CMY 91 Mixer with integrated IFamplifilter 2.5 3.0 - 3 fRF = 500 - 2500 fLO = 500 - 2500 fIF = 50 - 200 / PDC 7.5 CMY 200 Ultralinear down converter for tuner applications 50 5.0 - 5 fRF = 1000 - 1400 fLO = 1000 - 1400 fIF = 30 - 100 CMY 210 Ultralinear general purpose mixer 6.0 3.0 0 CMY 211 Ultralinear general purpose mixer 2.5 CMY 212 Ultralinear mixer with integrated IFamplifier CMY 213 Ultralinear mixer with integrated IFamplifier CMH 82 CMH 192 CMY 82 1) 1.81) VQFN24-3 PCS CDMA 2.5 VQFN24-3 0 9.5 MW-6 8.0 21.5 8.0 MW-6 fRF = 500 - 2500 fLO = 500 - 2500 fIF = 50 - 250 - 5.7 24 6.0 MW-6 3.0 0 fRF = 500 - 3500 fLO = 500 - 3500 fIF = 50 - 250 - 6.0 17.5 6.0 MW-6 11 3.0 - 4 fRF = 500 - 2500 fLO = 500 - 2500 fIF = 50 - 250 10.0 10.0 8.0 SCT598-8-1 8.0 3.0 - 5 fRF = 500 - 2500 fLO = 500 - 2500 fIF = 50 - 250 9.5 10.0 8.0 SCT598-8-1 cascaded performance incl. SAW-Filter between LNA and mixer (2.5 dB loss assumed) New type Data Book 10 V1.0, 2001-01-01 GaAs Components Selection Guide Table 12 Type RF-Switches Characteristics (TA = 25 C) Description f P- 1dB Package Insertion Loss dB Isolation dB GHz TX/RX- and diversity switch for mobile communications 0.5 - 1.0 1.0 - 2.0 0.3 0.5 20 20 22 3.0 SOT-363 CSH 210P TX/RX- and diversity switch for mobile communications 0.5 - 1.0 1.0 - 2.0 0.4 0.6 20 15 34 3.0 SOT-363 CSH 210 dBm VD V CSH 410 SP4T for GSM Mobile 1.0 Phones 2.0 0.6 0.8 25 21 38 4.5 VQFN-16-2 CSH 510 SP5T for GSM Mobile 1.0 Phones 2.0 0.7 0.9 25 21 38 4.5 VQFN-16-2 CSY 210 RF-SPDT switch for 0.9 mobile communication 1.8 applications 0.6 0.9 17 12 36 3.0 SCT-598 New type Data Book 11 V1.0, 2001-01-01 GaAs Components Technical Information 3 Technical Information 3.1 Type Designation in Accordance with Pro Electron This type designation applies to small-signal semiconductor components - in contrast to integrated circuits, multiples of these components and semiconductor chips. The number of the basic type consists of: two letters and a three-digit code. First Letter gives information about the material. A. B. C. R. Germanium or other material with a band gap of 0.6 ... 1.0 eV Silicon or other material with a band gap of 1.0 ... 1.3 eV Gallium-arsenide or other material with a band gap of 1.3 eV Compound material, e.g. cadmium-sulfide Second Letter Indicates the function for which the device is primarily designed. A. B. C. D. E. F. G. H. L. N. P. Q. R. S. T. U. X. Y. Z. Diode: signal, low power Diode: variable capacitance Transistor: low power, audio frequency Transistor: power, audio frequency Diode: tunnel diode Transistor: low power, high frequency Multiple of dissimilar devices; miscellaneous devices (e.g. oscillator) Diode: magnetic sensitive Transistor: power, high frequency Optocoupler Radiation-sensitive semiconductor component Radiation-emitting semiconductor component Control or switching device: low power (e.g. thyristor) Transistor: low power, switching Control or switching device: power (e.g. thyristor) Transistor: power switching Diode: multiplier, e.g. varactor, step recovery Diode: rectifier, booster Diode: voltage reference or regulator; transient voltage suppressor diode The three-digit code of the type designation consists of: - a three-digit number, running from 100 to 999, for devices primarily intended for consumer equipment etc. - one letter and a two-digit number for devices primarily intended for industrial/ professional equipment. This letter has no fixed meaning. Data Book 12 V1.0, 2001-01-01 GaAs Components Technical Information 3.2 Notation of the Symbols and Terms Used (DIN 41 785) The current, voltage, power (AC, DC, or average values) and resistance types (AC or DC values) are indicated by using capital and small letters for the symbols. Symbols The instantaneous data of values varying with time are indicated by small letters. Examples: i, v, p Capital letters are used for DC, average, rms, and peak values of periodical functions of the current, the voltage, and the power - i.e. for constant quantities. Examples: I, V, P Subscripts for the Symbols The following subscripts are used: E, e B, b C, c F, f R, r M, m av Emitter Base Collector Forward direction (diode operated in forward direction) Reverse direction (diode operated in reverse direction) Peak value Average value The subscripts for peak and average values may be omitted provided that a confusion with other values is impossible. Total values (instantaneous values, DC values, average, rms, and peak values) referred to a zero point are indicated by subscripts with capital letters. Examples: iC, IC, vBE, VBE, pC, PC Subscripts with small letters are used for the values of variable components (e.g. for instantaneous values, peak, and rms values referred to an average value). Examples: ic, Ic, vbe, Vbe, pc, Pc To distinguish between peak, average, and rms values, further subscripts may be added. The following abbreviations are recommended: Peak values M, m Average values Av, av Examples: ICM, ICAV, Icm, Icav Peak values may also be indicated by placing the symbol "" over the letter. Examples: IC, Ic Data Book 13 V1.0, 2001-01-01 GaAs Components Technical Information 3.3 Maximum Ratings The maximum ratings specified are absolute ratings which, if exceeded, may result in the destruction or permanent functional impairment of the component. When testing the component, as for example in respect to breakdown voltages, or during application, protection is to be provided in order to reliably ensure that maximum ratings are not exceeded. 3.4 Characteristics Typical characteristics describe the component behavior at defined operating conditions. The numerical values and diagrams pertain to the component type and shall not be considered as characteristics of an individual component. The minimum and maximum ratings stated for reasons of essential quality and application requirements describe the actual spread of the characteristics, whereas spread curves in diagrams usually specify the spread range which is to be expected. Electrical values are grouped into "static" DC values and "dynamic" AC values. The thermal resistance is closely related to the maximum ratings and, constituting the upper spread value, comes immediately after the maximum ratings. The component's case data is defined by reference to standard sheets and dimensional drawings. C iC Collector current c, crms ^ cm, c 0 cav C ic ^ CM, C CAV, CO CRMS iC 0 Time No signal With signal EHA07107 Figure 1 IC ICAV ICM, IC ICRMS DC value, no signal Average value of the total current (referred to zero) Peak value of the total current (referred to zero) RMS value of the total current (referred to zero) Data Book 14 V1.0, 2001-01-01 GaAs Components Technical Information Icav Average value of the variable component superimposed on the closed-circuit direct current IC (referred to the DC no-signal value IC) Ic, Icrms RMS value of the variable component (referred to the average value ICAV) Icm, Ic Peak value of the variable component (referred to the average value ICAV) iC Instantaneous total value (referred to zero) ic Instantaneous value of the variable component (referred to the average value ICAV) The following relations apply to the values indicated in the above-mentioned diagram: ICAV = IC + Icav ICM = IC = ICAV + Icm I CRMS = 2 2 I CAV + I crms IC = ICAV + iC Basic Symbol Chart The following chart illustrates the application of capital and small letter symbols. Table 13 Symbols e b i, v , p I , V, P Instantaneous value of the variable component RMS, average, and peak value of the variable component Instantaneous total value (as referred to zero) DC value, average, rms, and peak value (as referred to zero) c Subscripts f r m av E B C F R M AV Data Book 15 V1.0, 2001-01-01 GaAs Components Technical Information Instructions for the Subscript Sequence Voltages As a rule, two subscripts are used to indicate the points between which the voltage is measured. Positive numerical values of the voltages correspond to positive potentials on the point indicated by the first subscript as referred to the point indicated by the second subscript (point of reference). The second subscript may be omitted if this cannot lead to confusion or misunderstandings. A supply voltage may be indicated by repeating the subscript of the terminal concerned. Examples: VEEB, VBBC, VCCE Currents As a rule, at least one subscript is used. Positive numerical values of the current correspond to positive currents entering the component at the terminal indicated by the first subscript. Subscripts for Terminals In the case of components having more than one terminal of the same type, the subscripts for the terminals may be modified by suffixing a number to them. Subscript and suffix must be written on the same line. Example: VB2-E (voltage between second base terminal and emitter) If several components form an assembly, the subscripts for the terminals may be modified by prefixing a number to them, subscript and prefix having to be written on the same line. Example: V1B-2B (voltage between the base of the first component and the base of the second component) Admittances, Resistances, Four-Pole Network Coefficients, etc. Symbols Small letters with appropriate subscripts are used for four-pole network coefficients, as well as resistances, admittances, capacitances, inductances, etc., which describe the features of the component. Examples: h11b, h11e, z21b, y22c Data Book 16 V1.0, 2001-01-01 GaAs Components Technical Information Capital letters with appropriate subscripts are used for four-pole network coefficients, as well as resistances, admittances, capacitances, inductances, etc. of external network or of networks in which the component forms just a part. Examples: H11b, H11e, Z21b, Y22c Capital-letter subscripts are used for DC values (including large-signal values) of fourpole network coefficients, as well as, of resistances, admittances, etc. The DC value is the slope of the straight line from the origin of the coordinate system to the operating point on the characteristic of the component. Examples: rB, h11B, hFE Small-letter subscripts are used for AC values (small-signal values) of four-pole network coefficients, as well as of resistances, admittances, capacitances, inductances, etc. Examples: rbb, h11b, hfe The first subscript or the first pair of subscripts written in the manner customary for matrix elements is used for determining the elements of a four-pole network matrix. 11 (or i) 22 (or o) 21 (or f) = input = output = forward transfer 12 (or r) = reverse transfer Examples: V1 = h11 x I1 + h12 x V2 I2 = h21 x I1 + h22 x V2 Note When written in matrix representation (or as elements of matrixes) the voltage and current symbols are supplemented by a subscript consisting of a single numeral. Subscript 1 = input Subscript 2 = output The second subscript or the subscript following the pair of numerals indicates the basic circuit. If the common terminal is self-evident, the second subscript may be omitted. e = common emitter configuration b = common base configuration c = common collector configuration Examples: (common base configuration) I1 = y11b x V1b + y12b x V1b I2 = y21b x V1b + y22b x V2b If the transistor is described with a four-pole characteristic, it is recommended to fix the direction arrows for the input and output currents in the direction of the four-pole network. Data Book 17 V1.0, 2001-01-01 GaAs Components Technical Information 3.5 a A A b b11 b12 b21 b22 B, b C, c C Cb'c Cb'e Cc Ccase Ccb CCBO Cc'b Cce Cdg1 Cdss Ceb CEBO Ce'b Cg1ss Cg2ss Cib CL Cob Cth CT CT1/CT28 CT/CT C11 Data Book Alphanumerical List of the Symbols Used On-off base current ratio Anode Static current gain in common base configuration Dynamic short-circuit current gain in common base configuration Imaginary part of y-parameters Imaginary part of the short-circuit input admittance (of parameter y11) Imaginary part of the short-circuit reverse transfer admittance (of parameter y12) Imaginary part of the short-circuit forward transfer admittance (of parameter y21) Imaginary part of the short-circuit output admittance (of parameter y22) Base terminal Collector terminal Capacitance Intrinsic base collector capacitance Intrinsic base emitter capacitance Collector junction capacitance (in general) Case capacitance (in general) Collector base capacitance Collector base capacitance (including case capacitance) with open emitter (IE = 0) Intrinsic collector base capacitance Collector-emitter capacitance Reverse transfer capacitance Output capacitance Emitter-base capacitance Emitter-base capacitance (including case capacitance) with collector open (IC = 0) Intrinsic emitter base capacitance Gate1 input capacitance Gate2 input capacitance Input capacitance Load capacitance Output capacitance Thermal capacity (disregarding of heat dissipation to the environment) Diode capacitance Capacitance ratio (CT (VR = 1 V) / CT (VR = 28 V)) Capacitance matching Capacitance of the short-circuit input admittance (of parameter y11) 18 V1.0, 2001-01-01 GaAs Components Technical Information C12 C22 Capacitance of the short-circuit reverse transfer admittance (of parameter y12) Capacitance of the short-circuit forward transfer admittance (of parameter y21) Capacitance of the short-circuit output admittance (of parameter y22) D Duty cycle D = tp / T E, e Emitter terminal f Frequency difference Frequency Cutoff frequency Cutoff frequency of the short-circuit small signal current gain in common base configuration Cutoff frequency of the short-circuit small signal current gain in common emitter configuration Frequency at which hfe = 1 Maximum frequency of oscillation Transition frequency (Current gain-bandwidth product) Noise figure C21 f fC fhfb fhfe fhfe1 fmax fT F g g gb'c gb'e gce gm; gfs gth gthJC g11 g12 g21 g22 G G Ga Gg GL Data Book Real part of the y-parameters Conductance (instantaneous value) Intrinsic base collector conductance Intrinsic base emitter conductance Collector emitter conductance Transconductance Coefficient of thermal conductivity (instantaneous total value) Coefficient of thermal conductivity (total instantaneous value) between heat source and case, with infinitely good heat dissipation from the case (Tcase = Tamb) Real component of the short-circuit input admittance (of parameter y11) Real component of the short-circuit reverse transconductance (of parameter y12) Real component of the short-circuit forward transconductance (of parameter y21) Real component of the short-circuit output admittance (of parameter y22) Conductance (DC or average value) Gain flatness Associated gain Internal conductance of generator Load conductance 19 V1.0, 2001-01-01 GaAs Components Technical Information Gma Gms G p Gp Gpb Gpe Gpopt Gpbinv Gpbopt Gpeopt Gth GthA GV Power gain (Maximum available gain) Power gain (Maximum stable gain) Gain control range Power gain Power gain in common base configuration Power gain in common emitter configuration Power gain, optimum Reverse power loss (feedback damping) Power gain in common base configuration, optimum Power gain in common emitter configuration, optimum Coefficient of thermal conductivity (thermal conduction constant) Coefficient of thermal conductivity (thermal conduction constant) between heat source and static ambient air when using a cooling plate of defined size Coefficient of thermal conductivity (thermal conduction constant) between heat source and static ambient air. Coefficient of thermal conductivity (thermal conduction constant) between heat source and case, with infinitely good heat dissipation from the case (Tcase = Tamb) Voltage gain opt Reflection coefficient for minimum noise h h11 h12 h21 h22 hFE Parameter of the hybrid-matrix (h-matrix) Short-circuit input impedance Open-circuit reverse voltage transfer ratio (voltage feedback ratio hre) Short-circuit forward current transfer ratio (small signal current gain) Open-circuit output admittance DC current gain in common emitter configuration (static forward current transfer ratio) Small-signal current gain in common emitter configuration ( = h21 e) Small-signal current gain in common emitter configuration at f = 1 kHz (Dynamic short-circuit forward current transfer ratio in common emitter configuration) GthJA GthJC hfe hfeo i1 i2 IB IB1 IB2 IBM IC ICBO Data Book Input AC current Output AC current (in general) Base current (DC or average value) Control current, base-one current (UJT) Turn-off base current, on-off base current (UJT) Peak base current Collector current (DC or average value) Collector cutoff current with open emitter (IE = 0) 20 V1.0, 2001-01-01 GaAs Components Technical Information ICEO ICER ICES ICEV ICM ID IDSS IE IEBO IEM IF IFM IFS IG IG1SS IG2SS IK Io IR IP3 k Collector cutoff current with open base (IB = 0) Collector cutoff current with RBE = R (with a resistance RBE between base and emitter) Collector cutoff current with short-circulated emitter diode (VBE = 0) Collector cutoff current with reverse emitter diode Peak collector current Drain current Drain source saturation current Emitter current (DC or average value) Emitter cutoff current with open collector (IC = 0) Peak emitter current Forward current Peak forward current Surge current, maximum 1 sec Gate leakage current Gate1-source leakage current Gate2-source leakage current Short-circuit current Rectified current Reverse current Third order intercept point K Stability factor Cathode L Ls Inductance Series inductance m In a subscript: maximum (peak value) Degree of modulation In a subscript: maximum (e.g. upper scattering limit) in a subscript: minimum (e.g. Iower scattering limit) in a subscript: maximum (peak value) m max min M NF, F Noise figure NFmin, Fmin Minimum noise figure NF50, F50 Noise figure 50 -System P; p PAE Pp Ptot P- 1dB Data Book Power dissipation Power added efficiency Pulse power dissipation Total power dissipation RF output power at 1 dB compression point 21 V1.0, 2001-01-01 GaAs Components Technical Information 11 12 21 22 Phase of y-parameters Phase of the short-circuit input admittance (of parameter y11) Phase of the short-circuit reverse transfer admittance (of parameter y12) Phase of the short-circuit forward transfer admittance (of parameter y21) Phase of the short-circuit output admittance (of parameter y22) Q Q factor (Quality factor) r rbb' rbb' Cb'c rcc reb rf R RBE Rg RL RN rN Rs Rth Rthc RthJA RthJS RthJT Resistance (instantaneous value) Base intrinsic resistance Feedback time constant Collector intrinsic resistance Emitter intrinsic resistance Forward resistance of diodes Resistance (DC or average value) Resistance between base and emitter Internal resistance of generator Load resistance Equivalent noise resistance Normalized equivalent noise resistance Series resistance Thermal resistance Thermal resistance of a chassis plate (cooling plate, no heat sink) Thermal resistance between junction (heat source) and static ambient air Thermal resistance between junction and soldering point Thermal resistance between junction and Chip base (Chip thermal resistance) Thermal resistance between chip base and soldering point (package / alloy layer) Thermal resistance between soldering point and ambient (substrate thermal resistance) Thermal resistance between junction (heat source) and case at infinitely good heat dissipation from the case (Tcase = Tamb) Differential resistance RthTS RthSA RthJC RO S212 S11 S21 S12 S22 t td Data Book Power gain in 50 -system Input reflection coefficient in 50 -system Forward transmission coefficient in 50 -system Reverse transmission coefficient in 50 -system Output reflection coefficient in 50 -system Time Delay time 22 V1.0, 2001-01-01 GaAs Components Technical Information tf tgt tgq Fall time Gate controlled turn-on time Gate controlled turn-off time In a subscript: thermal Turn-off time (toff = tS + tf) Turn-on time (ton = td + tr) Pulse duration Circuit commutated turn-off time Rise time Reverse recovery time Storage time Temperature Period duration Ambient temperature Case temperature Channel temperature Junction temperature Abbreviation for "transistor" Soldering point temperature Storage temperature Charge carrier life time v vFM vRF vRM vRS v1 v2 V Vbatt VBB VBE V(BR) ... V(BR) DS V(BR) G1SS V(BR) G2SS - VG1S(P) - VG2S(P) VCB VCBO VCC VDS Voltage (instantaneous value) Peak forward voltage Input RF voltage Peak reverse voltage Maximum surge voltage, 1 sec Input AC voltage Output AC voltage Voltage Battery voltage Base supply voltage Base emitter voltage Breakdown voltage Drain-Source-breakdown voltage Gate1-Source-breakdown voltage Gate2-Source-breakdown voltage Gate1-Source Pinch-off voltage Gate2-Source Pinch-off voltage Collector base voltage Collector-base voltage with open emitter (IE = 0) Collector supply voltage Drain-source voltage th tOFF tON tP tq tr trr ts T T Tamb Tcase TCh Tj Tr TS Tstg Data Book 23 V1.0, 2001-01-01 GaAs Components Technical Information VDG VGS VCE VCEO VCER VCES VCEsat VCEV VlN VEBO VF VGS(P), VP VO VOUT Vt Drain-gate voltage Gate-source voltage Collector emitter voltage Collector-emitter (reverse) voltage base open (IB = 0) Collector-emitter (reverse) voltage with a resistor between base and emitter Collector-emitter voltage with short-circulated emitter diode (VBE = 0) Collector-emitter saturation voltage Collector-emitter (reverse) voltage with reverse base emitter diode Input voltage Emitter-base voltage with open collector (IC = 0) Forward voltage Pinch-off voltage Open-circuit voltage Output voltage Tuning voltage Y Y11 Y12 Y21 Y22 Parameter of the admittance matrix (y-matrix) Short-circuit input admittance Short-circuit reverse transfer admittance Short-circuit forward transfer admittance Short-circuit output admittance z12 Z1 Z2 Reverse impedance with open input Input impedance (general) Output impedance (general) Collector or drain efficiency Angular frequency = 2 x x f Data Book 24 V1.0, 2001-01-01 GaAs Components Technical Information 3.6 Explanation of the Symbols and Terms Used This section contains brief explanations of the symbols and terms used in the data sheets for transistors. In order to distinguish between the different voltages and currents of the transistor, suffix letters are used. The letters provide information on the connection mode of the transistor terminals. The order on which they are indicated together with the sign (+ or -) indicates the direction of the voltage or current. The technical concept of current flow applies (current flow from + to -). The three transistor terminals are denoted as follows: Emitter E Base B Collector C In order to characterize the cutoff currents and reverse voltages a third suffix letter is used. This letter provides information on the connection mode of the third terminal which is otherwise not mentioned. Following abbreviations are used: O R S V The third, unmentioned terminal is open. Ohmic resistance between the terminal mentioned in the second place and the unmentioned terminal. Short circuit between the terminal mentioned in the second place and the unmentioned terminal. Reverse bias voltage between the terminal mentioned in the second place and the unmentioned terminal. 3.7 Technical Explanations 3.7.1 Basic Transistor Configurations C B V CE V BE EHA07108 Figure 2 Data Book Common Emitter Configuration 25 V1.0, 2001-01-01 GaAs Components Technical Information E C V EB V CB EHA07109 Figure 3 Common Base Configuration E B V EC V BC EHA07110 Figure 4 Common Collector Configuration Table 14 Characteristics of the Basic Configurations Common Emitter Common Base Configuration Configuration Common Collector Configuration Input impedance medium low high Z1 Z1e Output impedance high very high low Z2 Z2e <1 high Small-signal current gain high hfe Voltage gain high high <1 Power gain very high high medium low high low Cutoff frequency fhfe Data Book 26 V1.0, 2001-01-01 GaAs Components Technical Information 3.7.2 Explanations of Important Electrical Characteristics 3.7.2.1 DC Parameters CER V CER + _ R BE EHA07111 Figure 5 VCER (ICER) Collector-emitter reverse voltage (collector-emitter cutoff current) with a resistor between base and emitter. The maximum permissible resistance value RBE is specified in the data sheets. The reverse voltage VCEO applies to higher values of RBE. + _ V CBO CBO EHA07112 Figure 6 VCBO (ICBO) Collector-base reverse voltage (collector-base cutoff current) with emitter open: IE = 0. Data Book 27 V1.0, 2001-01-01 GaAs Components Technical Information _ + EBO V EBO EHA07113 Figure 7 VEBO (IEBO) Emitter-base reverse voltage (emitter-base cutoff current) with collector open: IC = 0. CEO V CEO + _ EHA07114 Figure 8 VCEO (ICEO) Collector-emitter reverse voltage (collector-emitter cutoff current) with base open: IB = 0. The state IB = 0 may also occur for a short while, e.g. in operation as a switch, with a resistance interposed between base and emitter. CEV V CEV _ + + _ V BE EHA07115 Figure 9 VCEV (ICEV) Collector-emitter reverse voltage (collector emitter cutoff current) with blocked emitter diode, i.e., reverse bias voltage between base and emitter. Data Book 28 V1.0, 2001-01-01 GaAs Components Technical Information CES + _ V CES EHA07116 Figure 10 VCES (ICES) Collector-emitter reverse voltage (collector-emitter cutoff current) with shorted emitter diode: VBE = 0. 3.7.2.2 RF Parameters S21 G ms = ------S12 2 S 21 G ma = ------- x (k - k - 1) S 12 2 2 2 1 - S 11 - S 22 + S 11 S 22 - S12 S21 k = -----------------------------------------------------------------------------------------------2 S12 S21 Gma, Gms Maximum available gain if k 1 Maximum stable gain if k < 1 k Stability factor 2 ( S 21 ) dB = 10 x log S21 2 2 S21 Insertion power gain in a 50 system without matching at input and output. f T = h 21 x f T Transition frequency, determined by S-parameter measurement and calculation. h21 Current gain f Measurement frequency Data Book 29 V1.0, 2001-01-01 GaAs Components Technical Information P P RF, OUT PAE = ---------------------------------P RF, IN + P DC RF, OUT = --------------------- P DC PAE Power Added Efficiency Efficiency (collector- or drain-efficiency) B C cb C eb C C ce E EHA07504 Ccb Collector-base capacitance Cce Collector-emitter capacitance Ceb Emitter-base capacitance 3.8 Thermal Resistance The heat caused by the power loss Ptot in the active semiconductor region during operation results in an increased temperature of the component. The heat is dissipated from its source (junction J or channel Ch) via the chip, the case and the substrate (pc board) to the heat sink (ambient A). The junction temperature TJ at an ambient temperature TA is determined by the thermal resistance RthJA and the power dissipation Ptot: TJ = TA + Ptot x RthJA (with RthJA in K/W or C/W) Tab(T) Junction(J) Soldering point(S) Substrate Ambient(A) EHA07034 Figure 11 Data Book 30 V1.0, 2001-01-01 GaAs Components Technical Information 3.9 RF and AF Transistors and Diodes in SMD Packages In SMD packages the heat is primarily dissipated via the pins. The total thermal resistance in this case is made up of the following components: RthJA = RthJT + RthTS + RthSA RthJS = RthJT + RthTS RthJA RthJS RthJT RthTS RthSA thermal resistance between junction and ambient (total thermal resistance) thermal resistance between junction and soldering point thermal resistance between junction and chip base (chip thermal resistance) thermal resistance between chip base and soldering point (package/alloy layer) thermal resistance between soldering point and ambient (substrate thermal resistance) RthJS contains all type-dependent quantities. For a given power dissipation Ptot it is possible to use it to precisely determine the component temperature if the temperature TS of the warmest soldering point is measured (for bipolar transistors typically the collector, for FETs the source lead). TJ = TS + Ptot x RthJS The temperature of the soldering point TS is determined by the application, i.e. by the substrate, heat produced by external components and the ambient temperature TA. These components combine to form the substrate thermal resistance RthSA that is circuitdependent and can be influenced by heat dissipation measures. TS = TA + Ptot x RthSA If measurement of the temperature of the soldering point TS is not possible, or if estimation of the junction temperature is sufficient, RthSA can be read from diagrams below. Here we give an approximate value of the thermal resistance RthSA between the soldering point on an epoxy or ceramic substrate and still air as a function of the area of the collector mounting or ceramic. The parameter is the dissipated power, i.e. the heat TS - TA of the pc board. So in this case for the operating temperature: TJ = TA + Ptot x (RthJS + RthSA) Data Book 31 V1.0, 2001-01-01 GaAs Components Technical Information In the data sheets RthJS is stated as a thermal reference quantity of the heat dissipation. The total thermal resistance RthJA is stated for comparison purposes. Depending on the typical component application, substrates of the following kinds are used for reference: * AF applications epoxy circuit board: collector mounting area in cm2 Cu (see data sheets), thickness 35 m Cu. * RF applications ceramic substrate: 15 mm x 16.7 mm x 0.7 mm (alumina) or epoxy circuit board with collector mounting area corresponding to 80 K/W. The two diagrams below show, to an approximation, the thermal resistance as a function of the substrate area, assuming that the test device is located in the center of a virtually square substrate. EHA07035 10 3 EHA07036 10 3 R thSA R thSA K/W K/W T = 25 C TS = 50 C TA = 25 C T = 50 C TS = 75 C TA = 25 C 10 2 10 2 T = 75 C TS = 100 C TA = 25 C ref.substr. 2.5 cm 2 T =100 C TS =125 C TA = 25 C 10 1 10 -1 10 0 cm 2 Area of the collector mounting pad 10 1 10 1 10 0 cm 2 10 1 Substrate area Heat Dissipation from Al2O3-Substrate to Ambient Air (substrate in still air, vertical 0.6 mm thick) Heat Dissipation from PC Board to Ambient Air (mounting pad Cu 35 m/ substrate: epoxy 1.5 mm) Data Book 10 -1 32 V1.0, 2001-01-01 GaAs Components Technical Information 3.9.1 Temperature Measuring of Components Leads Measuring with temperature indicators (e.g. thermopaper) Temperature indicators do not cause heat dissipation and thus allow an almost exact determination of temperature. A certain degree of deviations can only result from roughgrade indication of the temperature indicators. This method is quite easy and provides sufficient accuracy. It is particularly suitable for measurement on pc boards. Measuring with thermocouple elements Measurement with thermocouple elements is not advisable because the functioning of the circuit can be influenced by the electrical conduction and the heat dissipation by the soldering point. This corrupts the results of the measurement, unless measurement is carried out with appropriate effort. 3.9.2 Permissible Total Power Dissipation in DC Operation The total power dissipation Ptot defines the maximum thermal gradient in the component. As a result of the heating of components, the maximum total power dissipation Ptot max stated in the data sheets is only permissible up to limits of TS max or TA max. These critical temperatures describe the point at which the maximum permissible junction temperature TJ max is reached. The maximum permissible ambient or soldering-point temperature is calculated as follows: TS max = TJ max - Ptot max x RthJS TA ax = TJ max - Ptot max x RthJA In diodes the power dissipation is for the most part caused by internal resistance. So the diagram has to be translated into the form IF = f (TS; TA), resulting in the bent shape of the curve. For RthJA the appropriate standard substrate was taken in each case. The diagrams shown here are intended as examples. For the application the curve given in the data sheet is to be taken. Exceeding the thermal max. ratings is not permissible because this could mean lasting degradation of the component's characteristics or even its destruction. Data Book 33 V1.0, 2001-01-01 GaAs Components Technical Information EHA07038 700 EHA07039 300 Ptot mW 600 f mA 500 200 400 TS TA 300 TA 100 TS 200 100 0 0 50 100 C 0 150 0 50 Total Power Dissipation 1) C 150 TA ; TS TA ; TS Ptot = f 100 Forward Current IF = f (TS; TA1)) (TS; TA1)) Al2O 3-Substrate 15 mm x 16.7 mm x 0.7 mm / Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm 3.9.3 Permissible Total Power Dissipation in Pulse Operation In pulse operation, under certain circumstances, higher total power dissipation than in DC operation can be permitted. This will be the case when the pulse duration tp, i.e. the length of time that power is applied, is small compared to the thermal time constant of the system. This time constant, i.e. the time until the final temperature is reached, depends on the thermal capacitances and resistances of the components chip, case and substrate. The thermal capacitance utilized in the component is a function of the pulse duration. Here we describe this through the transient thermal resistance. The pulse-load thermal resistance, or the permissible increase in Ptot that can be derived from it, is shown by way of examples in the following curves. For the application the particular data sheet should be taken. Ptot max / Ptot DC = f (tp) The duty factor tp /T is given as a parameter for periodic pulse load with a period of T. For long pulse durations the factor Ptot max/Ptot DC approaches a value of 1, i.e. Ptot in pulsed operation can be equated with the DC value. At extremely short pulse widths, on Data Book 34 V1.0, 2001-01-01 GaAs Components Technical Information the other hand, the increase in temperature as a result of the pulse (residual ripple) becomes negligible and a mean temperature is created in the system that corresponds to DC operation with average pulse power. EHA07040 10 2 R thJS tp K/W D= EHA07041 10 3 P totmax P totDC tp T tp T 10 10 2 D= 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 0 10 -5 10 -4 10 -3 10 -2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 s 10 tp 10 0 10-6 0 Permissible Pulse Load RthJS = f (tp) 3.10 tp T T 1 10 -1 10-6 D= 10-5 10-4 10-3 10-2 s 100 tp Permissible Pulse Load Ptot max / Ptot DC = f (tp) ESD (Electrostatic Discharge Sensitive Device) ESD-sensitive components are supplied in anti-static packaging. The attached warning label calls your attention to the necessity of protecting the components against electrostatic discharge, beginning with the opening of the package. 3.11 Standards For detailed information please refer to the following DIN literature: DIN 41 782: Diodes DIN 41 785: Maximum Ratings DIN 41 791: General Instructions DIN 41 852: Semiconductor Technology DIN 41 853: Terms Relating to Diodes DIN 41 854: Terms Relating to Bipolar Transistors Data Book 35 V1.0, 2001-01-01 GaAs Components Quality Management 4 Quality Management In order to achieve full customer satisfaction the Business Unit Wireless Products (WS) pursues the strategy of continuous improvement of delivery quality and reliability of the products. To this end we have strongly invested into automation of fabrication, computer aided statistical process control (SPC) and a twofold 100% inspection of all components. In addition, quality of the products is monitored continuously by standard spot checks based on MIL standards. An essential prerequisite for this strategy is a high-volume production of technologically similar components. WS assembles several billion SMD (Si + GaAs) components per year. Figure 12 shows the various quality management activities in the process flow. Production is based exclusively on released and documented instructions. Materials, parts and auxiliary materials which have to be procured regularly for production are subjected to thorough incoming inspections. A great variety of TQM activities accompany and support these tasks. Data Book 36 V1.0, 2001-01-01 GaAs Components Quality Management TQM Activities Process Flow Quality Supporting Actions Supplier QM Incomming Inspection/ Supplier SPC Data Store Environmental Control Wafer Fabrication Process Control/SPC/Audits Executive Steering Commitee TQM Groups Wafer Testing TQM Targets and Incentives QM Visual Inspection Sawing Training Assembly QM Statistical Expertise Working Group Assembly Clearance / SPC 100% Testing/Sorting Final Clearance 100% Testing/Marking/Packing QM Spot-Check QM Reliability Monitoring & Failure Analysis Finished Products Documentation Control Store Customer Support Delivery Quality Audits EHA07470sw Figure 12 Data Book Quality Management in the Production Flow 37 V1.0, 2001-01-01 GaAs Components Quality Management Customer Information Milestone Development Customer Requirements Acceptance of Product Idea Product Description Concept Release Target Specifications Project Release PREPARATION System Simulations Realisation Concept Release Circuit Development Completed System Tuning Prelim. Data Sheet Production Release Preliminary Errata Sheet Sample Release Sample Delivery Shipment Contract DEMONSTRATION Product Development Release Documentation Data Sheet Delivery Release Customer Release MONITORING EHA07471sw Figure 13 Data Book Approval Procedure 38 V1.0, 2001-01-01 GaAs Components Quality Management Using a thorough approval procedure we ensure that only fully developed products are phased into production (cf. Figure 13). Together with a highly sophisticated process monitoring the delivery quality has reached a level of only a few dpm (defects per million) for both electrical and mechanical failures. Of course our uppermost goal is to still improve these outstanding values in the future. Our customers obtain several substantial benefits from that low dpm level, such as * the incoming inspection can be reduced or even cancelled * cost reduction by less rework in the device production * cost reduction by less repairs during the device lifetime The continuous statistical process control in the wafer fab and in the assembly ensures a constant quality level and therefore a just in time delivery to the customer. 4.1 Reliability A high component reliability is achieved by * structural and technological measures using well-known design rules for the development of rugged chips with practicable process tolerances (cf. Figure 14). Gold Metallization (Front) Interconnection Metallization 2. Passivation 1. Passivation n+ n n+ n n+ Ohmic Contact Selective Ion Implantation Gate Figure 14 Data Book EHT09135 Chip Structure: Cross Section of a GaAs FET 39 V1.0, 2001-01-01 GaAs Components Quality Management Table 15 Layer Major Protective Function Silicon nitride passivation Protection against scratches, corrosion, uncontrolled charge accumulation Gold front metallization Protection against corrosion and electromigration Gate metallization with tungsten barrier Prevents ion diffusion and channel degradation at high junction temperatures * Prior to their realization improvements are tested in detailed experiments (cf. Figure 13). * Derivation of improvements from results which stem from various reliabiliy tests. The reliability of our components is ensured by a series of accelerated life tests. A socalled Periodic Monitoring is performed in order to detect possible reliability problems in an early stage and to be able to prove the reliability of our products at any time. Socalled pilot chips are monitored as representatives of a whole chip family. In planning monitoring, care was taken that all packages used in the Discrete and RF Semiconductors' line of products were included. On the whole, this procedure results in coverage of both chip-specific and package-specific manufacturing risks within the affected chip family. International foundation for all tests are MIL standards, CECC and IEC specifications. Our production sites in Munich, Regensburg and Malacca (Malaysia) are certified in accordance with the QS 9000 standards. 4.2 Quality Assurance Agreements More and more customers enter into so-called Quality Assurance Agreements (QAA). Such agreements regulate, e.g., AQL levels (Acceptable Quality Level), failure criteria, handling of customer concerns or mutual duty of information. A further example of agreements with customers are so-called ship-to-stock agreements. Data Book 40 V1.0, 2001-01-01 GaAs Components Package Information 5 Package Information Discrete and RF Semiconductors Packages Marking Layout SOT-143, MW-4, SCT-595, SCT-598 EH S 46 Manufacturer Date code (Year/Month) Type code EH S 46 Example 1994, June BCW 66 H Marking Layout SC-75, SOT-343, SOT-363, P-TSFP-4 Manufacturer WH S Type code Example WH S BCR 108 W Data Book 41 V1.0, 2001-01-01 GaAs Components Package Information Marking Layout for SOT-223, MW-7 and MW-12 Manufacturer Date code (Year/Calendarweek) S 94 24 1 6 BCP 5 2 Type code Example 1994, 24. Calendarweek (June) S 94 24 1 6 BCP 5 2 BCP 52-16 Data Book 42 V1.0, 2001-01-01 GaAs Components Package Information Marking Layout SOT-89 Type code GA S4 6 Date code (Year/Month) Manufacturer Example BAW78A GA S4 6 1994, June Data Book 43 V1.0, 2001-01-01 GaAs Components Package Information Marking Layout for MW-6 RBG-Production MAL-Production Month Year Infineon Type 12 12 EHT09289 Marking Layout for MW-16 Texts marked center justified 12345678 12345678 EHT09290 Marking Layout for TSSOP-10-2 1234 12B Ass. Site Code RBG = "B" MAL = "E" EHT09291 Marking Layout for VQFN-24-3 12345 12345 XX Lot Code EHT09292 Data Book 44 V1.0, 2001-01-01 GaAs Components Package Information Tape and Reel (DIN IEC 286-3) 34 5 Please consult your nearest Infineon sales offices (see list of addresses) if you have any queries relating to additional dimensions, dimensional tolerances or variations. 345 Data Book 45 V1.0, 2001-01-01 GaAs Components Package Information Role/Reel 180 mm and 330 mm Carrier tape width: 8, 12, 16 mm Gurtoberseite / Top Abwickelrichtung / Direction of unreeling Etikett (abziehbar und in dieser Lage lesbar ) Label (removable and readable in this position) Fixing on the Tape Carrier tape width: 12 mm 30 10 mm Carrier tape width: > 12 mm Data Book 46 V1.0, 2001-01-01 GaAs Components Package Information Richtung des Gurtbandes Direction of unreeling Trailer (empty) Leader (empty) 1x Circumference/Hub 1x Circumference/Reel Barcode Label (Reel o180) (Reel o330) STS-Label STS = Ship to stock We use removable labels. Please assist us in our recycling efforts and use removable labels as well. Thank you. Data Book 47 V1.0, 2001-01-01 GaAs Components Package Information Package Pieces/Reel O Reel P-TSFP-4 3.000/10.000 180*/330* Tape 0.2 P-TSFP-4 0.7 CPXG9326 1.55 8 1.4 4 SC-75 3.000/10.000 180*/330* Tape 0.2 max SCT-75 0.9 CPWG9095 1.9 8 4 * Supplementary Code 180 mm = E 6327 (standard tape loading orientation) 330 mm = E 6433 (standard tape loading orientation) Data Book 48 V1.0, 2001-01-01 GaAs Components Package Information Package Pieces/Reel O Reel SOT-343 3.000/10.000 180*/330* SOT-3631) 3.000/10.000 180*/330* Tape 0.2 4 8 2.3 SOT 343 2.15 CSOG5902 1.1 SOT 363 1) 180 mm = E 6727 (180 rotated tape loading orientation) SOT-143 3.000/10.000 180*/330* Tape 0.2 SOT-143 3.15 1.15 CSOG5812 8 2.6 4 * Supplementary Code 180 mm = E 6327 (standard tape loading orientation) 330 mm = E 6433 (standard tape loading orientation) Data Book 49 V1.0, 2001-01-01 GaAs Components Package Information Package Pieces/Reel O Reel SOT-89 1.000/4.000 180*/330* Tape 8 1.6 1.000/4.000 CSOG5813 4.3 SOT-89 SOT-223 12 4.6 0.2 180*/330* Tape 0.3 max 6.8 1.75 CSOG5903 SOT-223 12 7.55 8 * Supplementary Code 180 mm = E 6327 (standard tape loading orientation) 330 mm = E 6433 (standard tape loading orientation) Data Book 50 V1.0, 2001-01-01 GaAs Components Package Information Package Pieces/Reel O Reel SCT-595 3.000/10.000 180*/330* Tape 0.2 3.15 1.15 CPWG9319 SCT 595 2.6 8 4 SCT-598 3.000/10.000 180*/330* SCT-598-8-1 3.000/10.000 180*/330* Tape 0.2 3.15 1.15 CPWG9194 SCT-598 2.6 8 4 * Supplementary Code 180 mm = E 6327 (standard tape loading orientation) 330 mm = E 6433 (standard tape loading orientation) Data Book 51 V1.0, 2001-01-01 GaAs Components Package Information Package Pieces/Reel O Reel MW-4 3.000/10.000 180*/330* Tape 0.2 3.15 1.15 CPWG9321 MW-4 2.6 8 4 MW-6 3.000/10.000 180*/330* Tape 0.2 3.15 1.15 CPWG5899 MW-6 2.6 8 4 * Supplementary Code 180 mm = E 6327 (standard tape loading orientation) 330 mm = E 6433 (standard tape loading orientation) Data Book 52 V1.0, 2001-01-01 GaAs Components Package Information Package Pieces/Reel O Reel MW-7 1.000/4.000 180*/330* MW-12 1.000/4.000 180*/330* Tape 0.3 max 8 5:1 1.75 6.8 MW-12 MW-16 3.000/10.000 CPWG5900 12 7.55 MW-7 180*/330* Tape 0.3 16 7.5 12 9.5 2.5 CPWG9093 MW-16 * Supplementary Code 180 mm = E 6327 (standard tape loading orientation) 330 mm = E 6433 (standard tape loading orientation) Data Book 53 V1.0, 2001-01-01 GaAs Components Package Information Package Pieces/Reel O Reel P-TSSOP-10-2 5000 330* Tape 0.3 12 3.2 8 P-TSSOP-10-2 1.4 CPSG9365 5.2 P-VQFN-24-3 4000 330* Tape CVQG9344 P-VQFN-24-3 * Supplementary Code 180 mm = E 6327 (standard tape loading orientation) 330 mm = E 6433 (standard tape loading orientation) Data Book 54 V1.0, 2001-01-01 GaAs Components Notes on Processing 6 Notes on Processing Component Placement The ability to place semiconductors depends very much on the type involved. Up to a pitch size of 1.27 mm, mechanical centering by tools of an automatic component placement machine suffices, e.g. jaws and centering units. Multiple-pin ICs have to be placed accurately according to their geometry. As a guide, a maximum offset of 30% between the pin of the SMD and the pad is permitted (see Figure 15). SMD-Anschlu SMD pin Leiterplatten-Anschlu Pad Figure 15 HLG0 5414 Versatz offset Permissible Offset between Pin of an SMD and Pad Component Solderability The sufficiently thick SnPb surface of most semiconductors assures good solderability, even after a long storage time. Note that the cut edges of the pins should be ignored in any assessment of solderability. Test criterias for solderability of SMDs please see Table 16. The components are immersed in a solder bath, after which the pins are assessed optically. (As a minimum, 95% of the surface must be wetted). Data Book 55 V1.0, 2001-01-01 GaAs Components Notes on Processing Table 16 Solderability Test to Infineon Standard Test Criterion Solder Bath Temperature Dwell Time in Bath C s Components for wave and reflow soldering Wetting 215 3 3 0.3 Dewetting and leaching 260 5 30 1 Components for reflow soldering only Wetting 215 3 3 0.3 Dewetting 260 5 5 0.5 Leaching Not applicable Not applicable Resistance to Soldering Heat Each semiconductor component is affected if the admissible barrier layer temperature is exceeded. Resistance to soldering heat indicates the maximum thermal load to which a component may be subjected. But since thermal absorption may occur in many different ways, it is practical to take the standard soldering methods as a basis, e.g. CECC 00802 (see Figure 16 to Figure 18), whereby the temperature is measured on the package pin. 300 10 s Temperatur / Temperature C 260 C 250 ca. / approx. 245 C T <6K/s t 215 C 200 183 C 160 130 C 10 s ca. / approx. 90 s 100 2K/s 0 0 Figure 16 Data Book 50 100 150 200 s Zeit / Time 250 HLG0 5409 Normalkurven / Standard curves Grenzkurven / Limit curves 50 Soldering Profile for Infrared Soldering 56 V1.0, 2001-01-01 GaAs Components Notes on Processing 300 250 235 C bis / to 260 C 2. Welle / 2nd wave 1. Welle / 1st wave 200 5K / s atwa / apprax. 200K / s 2K / s 150 100 C bis / to 130 C 100 0 0 Figure 17 50 100 150 250 Soldering Profile for Dual Wave 300 Normalkurven / Standard curves Grenzkurven / Limit curve C Temperatur / Temperature 200 s Zeit / Time HLG0 5411 Zwangskuhlung Forced air cooling 50 20 bis / to 60 s 250 215 C 200 180 C 150 externe Vorheizung external preheating 100 Figure 18 Data Book Zwangskuhlung Forced air cooling 100 C interne Vorheizung / internal preheating z. B. Infrarot max. 2 K / s / e. g. infrared max. 2 K / s T <2K/s t 50 0 T <6K/s t 130 C 0 50 100 150 200 s Zeit / Time 250 HLG0 5410 Temperatur / Temperature Normalkurven / Standard curves Grenzkurven / Limit curves 10 s C Soldering Profile for Vapor Phase-Soldering 57 V1.0, 2001-01-01 GaAs Components Notes on Processing Classes of Resistance to Soldering Heat of Infineon Discrete Semiconductors acc. to CECC 00802 The components are subdivided into a number of classes according to their suitability; these classes correspond to the allocation to soldering methods. Class A, for example, includes all the values contained in the limit curves of the soldering profiles. The resistance to soldering heat is tested after immersing the components in liquid solder under the conditions specified in Table 17. Allocation of Classes of Resistance to Soldering Heat to Soldering Processes Table 17 Class Test Conditions Soldering Process A 260 C/10 s and1) 215 C/40 s Dual wave, Infrared2), Vapor phase A1 260 C/5 s and1) 215 C/40 s Single wave, Infrared2), Vapor phase B 215 C/40 s Vapor phase, Infrared2) C 260 C/10 s Dual wave, Infrared 2) C1 260 C/5 s Single wave 1) Not in direct succession in tests on the same specimen 2) Infrared soldering is included, provided the temperature load during soldering does not exceed the thermal compatibility of a component, which is only assured up to the conditions tested here. The classes shown in Table 18 are guaranteed for our packages. Resistance to soldering heat in no way indicates whether a component may indeed be soldered by a specific method. The unsuitability of many SMDs for wave soldering is typical. Data Book 58 V1.0, 2001-01-01 GaAs Components Notes on Processing Table 18 Classes of Resistance to Soldering Heat of Infineon Components according to CECC 00802 SOT-143 SOT-223 Class A SC-75 SCT-595 SCT-598 SOT-89 SOT-343 SOT-363 TSFP-4 MW-4 MW-7 MW-12 MW-16 Class B Soldering Discrete Semiconductors With regard to soldering discrete semiconductors the following is recommended: Table 19 Recommendation for Soldering Method Packages SOT-143 SOT-223 SOT-343 SOT-363 SC-75 SCT-595 SCT-598 MW-4 MW-6 MW-7 MW-12 MW-16 TSFP-4 TSSOP-10-2 VQFN-24-3 SOT-89 Wave soldering - O Reflow soldering + + + soldering method suitable O soldering method unsuitable - soldering method not allowed Note: There may be product specific deviations from this table, please refer to the product specific soldering recommendation. Data Book 59 V1.0, 2001-01-01 GaAs Components Notes on Processing Recommended Landing Pattern Layout P-TSFP-4 0.35 0.5 0.5 0.9 HLG09268 0.45 Reflow soldering SC-75 0.65 0.4 0.4 0.5 0.5 0.65 HLG05999 1.15 Reflow soldering Data Book 60 V1.0, 2001-01-01 GaAs Components Notes on Processing SOT-343 1.15 0.9 0.6 1.6 HLG05824 0.8 Reflow soldering 0.65 SOT-363 0.3 1.6 HLG05826 0.65 0.7 Reflow soldering Data Book 61 V1.0, 2001-01-01 GaAs Components Notes on Processing SOT-143 1.2 0.8 0.9 1.1 0.9 0.8 0.8 0.8 HLG05514 1.2 Reflow soldering SOT-143 0.8 1.3 0.6 1.3 1.5 HLG05515 1.5 1.0 1.5 1.3 Wave soldering Data Book 62 V1.0, 2001-01-01 GaAs Components Notes on Processing 0.8 0.7 2.0 0.8 SOT-89 2.5 1.2 HLG05522 1.0 Reflow soldering 1.2 1.1 3.5 SOT-223 4.8 Reflow soldering Data Book 1.4 HLG05518 1.4 63 V1.0, 2001-01-01 GaAs Components Notes on Processing SOT-223 Transportrichtung der Leiterplatte fur Wellenloten 1.4 0.9 4.0 Direction of pcb transportation for wavesoldering 4.8 Wave soldering Data Book 1.7 HLG05519 1.7 64 V1.0, 2001-01-01 GaAs Components Notes on Processing SCT-595 2.9 1.9 1.3 0.4 0.75 HLG09053 0.95 Reflow soldering SCT-598 SCT-598-8-1 0.3 1.9 2.9 0.6 0.75 0.6 HLG09183 2.1 Reflow soldering Data Book 65 V1.0, 2001-01-01 GaAs Components Notes on Processing 0.9 1.2 MW-4 0.7 0.6 HLG05516 0.9 Reflow soldering MW-6 2.9 0.75 1.9 0.4 HLG05818 0.95 Reflow soldering Data Book 66 V1.0, 2001-01-01 GaAs Components Notes on Processing 0.8 0.8 0.47 0.505 2.0 0.505 MW-7 5.6 1.2 HLG05520 1.2 Reflow soldering MW-12 2.3 0.9 HLG05819 0.4 Reflow soldering Data Book 8.4 5.4 0.5 67 V1.0, 2001-01-01 GaAs Components Notes on Processing MW-16 0.8 0.5 1.6 o5 HLG09056 8.7 Reflow soldering B e P-TSSOP-10-2 L e P-TSSOP-10-2 0.50 A L B 4.50 1.00 0.30 Reflow soldering Data Book 68 HLG05506 A V1.0, 2001-01-01 GaAs Components Notes on Processing P-VQFN-24-3 e e Ay B L L B HLG05507 Ax Reflow soldering Data Book 69 V1.0, 2001-01-01 GaAs Components Package Outlines Package Outlines 0.59 max. 1.4 0.1 0.2 +0.1 -0.05 1 2 0.8 0.1 3 1.2 0.1 4 A 10 max. 7 0.15 0.05 P-TSFP-4 0.5 0.5 0.1 M 0.2 M A 4x P-TSFP-41) 1.6 0.2 0.2 +0.1 -0.05 SCT-75 10max 0.8 0.1 +0.2 acc. to DIN 6784 10max A 1.6 0.2 0.1 max 0.7 0.1 0.2 +0.1 -0.05 0.15 0.1 0.5 0.5 0.10 0.20 M M A SC-751) 1) All dimensions in mm, unless otherwise specified Data Book 70 V1.0, 2001-01-01 GaAs Components Package Outlines 2 0.2 0.9 0.1 B 1.3 0.1 0.20 M 0.1 max B 1 2 +0.2 acc. to DIN 6784 2.10.1 3 1.25 0.1 A 4 SOT 343 0.15 +0.1 -0.05 0.3 +0.1 0.6 +0.1 0.20 M A SOT-3431) 2 0.2 0.9 0.1 B 0.2 +0.1 0.1 max SOT 363 4 1 2 3 +0.2 acc. to DIN 6784 2.10.1 5 1.25 0.1 A 6 0.15 +0.1 -0.05 0.65 0.05 1.3 0.1 0.20 M B 0.20 M A SOT-3631) 1) All dimensions in mm, unless otherwise specified Data Book 71 V1.0, 2001-01-01 GaAs Components Package Outlines 1.1 max 2.9 0.1 B 1.9 0.1 max 0.3 0.1 4 SOT-143 +0.1 0.8 -0.05 +0.2 acc. to DIN 6784 3 1 2 10 max 1.3 0.1 A 2.6 max 10 max 0.7 0.2 0.55 -0.1 0.4 +0.1 -0.05 0.08...0.15 1.7 0.25 M 2... 30 B 0.20 M A SOT-1431) B 0.15 SOT-89 10 max 1.6 0.2 4 0.25 2.5 0.1 +0.2 acc. to DIN 6784 1.5 0.1 M 0.45 +0.2 -0.1 B 2.75 +0.1 -0.15 0.15 0.25 0.5 1.0 0.2 4.5 45 0.35 0.1 1.5 3 0.2 B SOT-891) 1) All dimensions in mm, unless otherwise specified Data Book 72 V1.0, 2001-01-01 GaAs Components Package Outlines 1.6 0.1 6.5 0.2 0.1 max 4 1 2 0.5 min +0.2 acc. to DIN 6784 3 SOT-223 3.5 0.2 B 7 0.3 3 0.1 15max A 0.28 0.04 2.3 0.7 0.1 4.6 0.25 M 0.25 A M B SOT-2231) 2.9 0.2 B (2.2) 1.2 +0.1 -0.05 1.1 max (0.3) 1) 1 2 3 10max +0.2 acc. to DIN 6784 4 (0.23) (0.13) 5 10max 1.6 0.1 0.1 max 2.6 max 0.25 min (0.4) 1) 0.3 +0.1 -0.05 SCT 595 0.15 +0.1 -0.06 0.6 +0.1 -0.05 0.20 0.95 1.9 0.25 M 1) B M A A Contour of slot depends on profile of gull-wing lead form SCT-5951) 1) All dimensions in mm, unless otherwise specified Data Book 73 V1.0, 2001-01-01 GaAs Components Package Outlines 2.9 0.2 1.1 max. 0.75 0.6 1 2 3 4 +0.2 acc.to DIN 6784 0.2 +0.1 -0.05 SCT-598 0.15 0.5 +0.1 -0.05 M 2.6 max. 0.25 min. 7 6 5 M A 0.1 max. B 0.20 2.1 0.15 10 max. 8 10 max . 0.15 +0.1 -0.06 1.6 + 0.1 B M A B SCT-5981) 2.9 + 0.2 0.75 0.6 2 1 3 VPW05982 4 1 2 3 4 +0.2 n. DIN 6784 +0.1 0.2 -0.05 0.1 max. 0.5 +0.1 -0.05 2.1 0.25 M 1.6 + 0.1 7 6 5 . 8 10 max 7 A 5 10 max. 8 6 1.1 max. 0.15 +0.1 -0.05 2.6 max. 0.25 min. B 0.20 M A B SCT-598-8-11) 1) All dimensions in mm, unless otherwise specified Data Book 74 V1.0, 2001-01-01 GaAs Components Package Outlines 2.9 0.1 B 0.5 1.1 max 0.1 max MW-4 0.7 +0.1 -0.05 4 3 1 2 +0.2 acc. to DIN 6784 10max 1.3 0.1 A 2.6 max 10max 0.65 0.08...0.15 0.4 +0.1 -0.05 2... 30 0.25 M B 0.20 A M MW-41) 1.1 max 2.9 0.1 B 0.6 +0.1 -0.05 MW-6 0.3 +0.1 -0.05 6 5 4 1 2 3 +0.2 acc. to DIN 6784 10max 1.3 0.1 A 2.6 max 10max 0.1 max 0.08...0.15 1.9 0.25 M 2... 30 B 0.20 M A MW-61) 1) All dimensions in mm, unless otherwise specified Data Book 75 V1.0, 2001-01-01 GaAs Components Package Outlines 1.6 0.1 6.5 0.2 A +0.1 1.87 -0.05 5:1 MW-7 1 3 4 2 +0.2 acc. to DIN 6784 3.5 0.2 5 15max 6 0.5 min 7 7 0.3 B 0.1 max 0.60 +0.1 -0.05 0.280.04 1.27 3.81 0.25 M A 0.25 M B MW-71) 1.6 0.1 6.5 0.2 0.1 max 2.2 0.1 9 8 0.5 min +0.2 acc. to DIN 6784 3.5 0.2 10 7 0.3 12 11 B 15max A MW-12 0.4 +0.1 -0.05 1 2 3 4 5 6 0.280.04 7 6 x 0.9 5.4 0.25 M 0.25 A M B MW-121) 1) All dimensions in mm, unless otherwise specified Data Book 76 V1.0, 2001-01-01 GaAs Components Package Outlines MW-16 1.6 max 7 0.1 max 0.2 7 x 0.8 = 5.6 1.4 0.1 A-B D C 0.350.05 B H 7 9 D M 4x 0.2 A-B D H 16x 0.2 D +0.05 0.15 -0. 06 0...7 16x 0.1 C A 0.8 Exposed solderable heatsink o4.57 0.05 C MW-161) 1) All dimensions in mm, unless otherwise specified Data Book 77 V1.0, 2001-01-01 GaAs Components 0.5 0.1 A A 0.22 0.05 0.08 M 6 max. 0.42 +0.15 -0.1 ABC 4.9 2.4 B +0.08 0.125 -0.05 3 0.1 H 0.09 0.15 max. 0.85 0.1 1.1 max. Package Outlines 0.25 A B C 1.6 P-TSSOP-10-2 3 0.1 C Index Marking P-TSSOP-10-21) P-VQFN-20-3 P-VQFN-201) 1) All dimensions in mm, unless otherwise specified Data Book 78 V1.0, 2001-01-01 GaAs Components Package Outlines P-VQFN-24-3 P-VQFN-24-31) 1) All dimensions in mm, unless otherwise specified Data Book 79 V1.0, 2001-01-01 GaAs Components Application Notes 8 Application Notes CGY 180 - 3 V 500 mW RF Power Amplifier Solution for DECT . . . . . . . . . . . . . . . . .81 15 GHz GaAs-FET Buffered Oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .85 CMY 210 - 173 MHz to 824 - 849 MHz Up-Converter . . . . . . . . . . . . . . . . . . . . . . . . .89 CMY 210 - 233 MHz to 1.9 GHz Up-Converter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .95 CMY 210 - 1960 MHz to 110 MHz Down-Converter. . . . . . . . . . . . . . . . . . . . . . . . . .101 CMY 210 - 880 MHz to 85 MHz Down-Converter. . . . . . . . . . . . . . . . . . . . . . . . . . . .107 CMY 91 Down-Converter Application Circuit for PHP Systems . . . . . . . . . . . . . . . . .113 CF 750 - 1850 MHz to 350 MHz Down-Converter . . . . . . . . . . . . . . . . . . . . . . . . . . .117 CF 750 - 1500 MHz to 130 MHz Down-Converter . . . . . . . . . . . . . . . . . . . . . . . . . . .120 CF 750 - 950 MHz to 75 MHz Down-Converter . . . . . . . . . . . . . . . . . . . . . . . . . . . . .124 CF 750 - 250 MHz to 1900 MHz Up-Converter . . . . . . . . . . . . . . . . . . . . . . . . . . . . .127 CF 750 - 50 MHz to 865 MHz Up-Converter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .130 CSY 240 - Bidirectional GaAs SPDT Switch with Positive 3 V (5 V) Switching Supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .133 CGY 98 GSM/PCN Dual Band Power Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . .138 Data Book 80 V1.0, 2001-01-01 CGY 180 - 3 V 500 mW RF Power Amplifier Solution for DECT Application Note No. 004 Abstract In the following content a high efficiency GaAs MMIC power amplifier application for DECT is presented. The CGY 180 is characterized on a cost effective and easy to use epoxy PCB. Measurement conditions (biasing, handling) and additional hints are given to achieve optimum performance. MW-12 The DECT MMIC CGY 180 The CGY 180 is a fully integrated three stage amplifier in a small MW12-package (SOT223-size). VTR 1 VG VD1 VD2 2 8 9 VD3 11 Control Circuit PIN 7 11 P OUT 6 GND1 3, 4, 5, 10 GND2 EHT08640 Figure 1 Pin # Name Pin # Name 1 7 RF IN 2 VTR VG 8 3 GND2 9 VD1 VD2 4 GND2 10 GND2 5 GND2 11 VD3, POUT 6 GND1 12 N.C. Data Book 81 V1.0, 2001-01-01 GaAs Components Application Note No. 004 The PA delivers more than 27 dBm saturated power in to a 50 load at 3 V, 1.89 GHz with a PAE1) of typ. 35%. The output (pin #4) requires a small shunt capacitor for optimum load match. The input pin (pin #12) is DC-decoupled and matched to 50 (Mag S11 > 10 dB). The supply voltage to each stage is connected via the pins #1, #2 and #4. The circuit is characterized at 3 V-operation with very little performance degradation at the 2.7 V "end of life" condition. CGY 180 can also be used up to 6 V. An internal control circuit is responsible for setting the optimum operating current for each amplifier stage in transmit mode. In receive mode all stages are switched off by the control circuit. Handling of the CGY 180 Application Board A negative voltage between - 4 V to - 6 V (stabilization is not necessary, VGmax = - 10 V) has to be connected first to the VG-pin, a positive supply voltage has to be applied to the VD-pins. The VTR-pin has to switched to 0 V (GND) during transmit operation. The MMIC CGY 180 is self-biased, the operating current is adjusted by the internal control circuit. In receive mode the VTR-pin is not connected (shut-off mode). The size of the PCB is 25 mm x 20 mm! 1 nF VG DECT VTR IN CGY 180 CGY 180 6.8 pF 1.5 pF 1 nF 1 nF VD 1 nF DL 4 MDR 68 pF OUT GND 4.7 F EHT08652 Figure 2 1) PAE = Power Added Efficiency = PRFout / (PDC + PRFin) Data Book 82 V1.0, 2001-01-01 GaAs Components Application Note No. 004 In the following figure the Gain and the PAE of the CGY 180 application at 3 V-operation at 1.89 GHz is shown. The RF-test was performed as a pulsed measurement with tON = 1 ms and a duty cycle of 10%. . EHT09036 30 dBm POUT 28 50 % 45 PAE 26 40 24 35 22 30 20 25 18 20 16 15 14 10 12 5 10 -15 -10 -5 0 dBm 5 0 PIN Data Book 83 V1.0, 2001-01-01 GaAs Components Application Note No. 004 The following figure demonstrates the input return loss (S11) and the Gain (S21) calculated from a S-parameter measurement. The S-parameters were measured in a pulsed configuration (tON = 1 ms, 10% duty). The input power was 0 dBm. EHT09037 30 0 DB [S21] DB [S11] 20 10 1500 -10 1750 MHz f -20 2000 Application Hints If a special operation point of the CGY 180 is necessary, a simple solution exists. Don't use the VTR-pin (#6). Apply a negative voltage (0 ... - 4 V) to the VG-pin (#7) and choose the desired operating current. The shut off during receive mode can be done, by connecting a voltage of < - 3.8 V to the VG-pin. If the self adjusted operating current is to high for the desired application (usage of the internal control circuit), but the usage of the VTR-pin is desirable, one cheap chip resistor will help. Connect a series resistor (100 < RS < 1 k) in the VTR-line and this will result in a reduced quiescent current of the circuit. Data Book 84 V1.0, 2001-01-01 15 GHz GaAs-FET Buffered Oscillator Application Note No. 010 A buffered stable oscillator has been developed using a parallel feedback circuit, two CFY 35 GaAs-field effect transistors and a dielectric resonator. In addition a spacer for a high resonator quality-factor is added. The design goals for this oscillator are high output power > 10 dBm, low phase noise < - 95 dBc/Hz at 100 kHz offset and high stability versus load impedance variations and versus temperature. The emphasis has been also on small size and high reliability (Figure 1). Dielectric Resonator LN95 / 5011 MA 2129 f r = 14.1 GHz Spacer h = 0.5 mm 100 12 pF CFY35 / Buffer RF-Out 22 pF CFY35 100 82 100 Ioh 2.2 F Plasted through hole +5 V / 37 mA 100 pF 23 mm 28 mm Ioh Scale 1:1 EHT09040 Figure 1 The Buffered Oscillator Circuit on a Teflon Board (r = 2.4, h = 0.38 mm and t = 17.5 m Cu) consists of several surface mounted devices and plated thru holes. The resistors and capacitors used have dimensions of 2 mm x 1.27 mm. The CFY 35 transistors are housed in a MW-4 package. By turning on the DC-bias, the oscillator starts up from noise to a power level, that depends on the load impedance i.e. the input reflection coefficient of the buffer amplifier circuit. Therefore the capacitance 12 pF can be used to optimize the tuning range and Data Book 85 V1.0, 2001-01-01 GaAs Components Application Note No. 010 the output power of the parallel feedback oscillator circuit. A microstrip tuning stub and the capacitor 22 pF at the output of the buffer amplifier provide high gain values. The code below and Figure 2 show the small signal simulation of the oscillator. The output MAG S11 can be maximized up to 40 by the variation of the microstrip lines. Though Microwave Harmonica 6.0 offers a DR-model, a RLC-circuit and two ideal transformer (trf) simplify the simulation. BLK trl 1 2 w=1.1mm P=5.12mm open 1 w=1.1mm trf 2 3 4 5 n=1 cap 3 5 c=81.4pf ind 3 5 l=1.375pH res 3 5 r=165 trf 3 7 5 8 n=-1 trl 7 9 w=1.1mm p=2.5mm open 9 w=1.1mm trl 4 10 w=1.1mm p=2mm trl 8 11 p=1mm sub w=1.1mm tee 11 15 13 w1=1.1mm w2=1.1mm w3=1.1mm trl 15 18 w=1.1mm p=3mm two 10 18 0 b2 trl 13 16 w=1.1mm p=3mm dro:1por 16 END FREQ step 14.95ghz 15.05ghz 2mhz END OUT pri dro sk END DATA sub:ms er=2.4 h=0.380mm met1=cu 0.125mil tand=0.0001 b2:d1 file=c:\6compact\loh\10901n1.s2p END Data Book 86 sub sub sub sub sub sub sub sub V1.0, 2001-01-01 GaAs Components Application Note No. 010 9 7 8 11 5 3 13 16 RF OUT 15 5 3 18 S2P 1 2 10 4 EHT09038 EHT09039 40 V 0 30 20 10 0 14.95 GHz 15.05 f Figure 2 Small Signal Analysis of the Oscillator without Buffer Amplifier The two circuits - oscillator and buffer amplifier - both operate in a saturation current mode. The operating current without oscillation (IDSS, VG = 0) will be reduced by self biasing effects after start up. Table 1 shows the typical characteristics of the circuit housed in a metal cavity. Cavity oscillation effects can be avoided by the use of absorber material or optimized cavity dimensions. Data Book 87 V1.0, 2001-01-01 GaAs Components Application Note No. 010 Table 1 Typical Characteristics of the Buffered Oscillator Parameter Value Operating frequency 14.5 to 15.3 GHz Operating temperature range - 40 C to + 120 C Output power 12 dBm Power variation with temperature (- 40 C to + 120 C) 1 dB Load impedance 50 Frequency stability versus temp. (- 40 C to + 120 C) - 2 MHz to + 7 MHz Frequency pushing versus bias voltage 3 MHz/V Phase noise at 100 kHz offset < - 95 dBc/Hz Bias voltage +5V Bias current 37 mA References 1. R. Soares: GaAs-MesFET Circuit Design, Artech House, Inc., 1988. 2. G. Gonzales: Microwave Transistor amplifiers - Analysis and Design, Prentice-Hall, Inc., 1984. 3. Application Note No.002: Silicon Bipolar-Dielectric Resonator Oscillator (DRO) at 10 GHz 4. G. Lohninger, "Oszillatordesign in der Hochfrequenztechnik", Elektronik, Heft 03/95. Data Book 88 V1.0, 2001-01-01 CMY 210 - 173 MHz to 824 - 849 MHz Up-Converter Application Note No. 035 The CMY 210 is a ultralinear mixer with integrated LO-buffer for frequencies up to and exceeding 2.5 GHz. A low LO-input power of typically 0 dBm is sufficient to provide a very high input intercept point of typically 25 dBm at 3 V. The input and output ports are 50 W matched. The device can be used as up- and downconverter. Application Circuit L2 C1 L1 RF OUT C2 1 CMY210 C3 L3 LO IN IF IN 1) 6 3 2, 5 4 L4 C4 R1 VDD Figure 1 Application Circuit Table 1 List of Components L1 L2 L3 15 nH Coilcraft 0805 L4 12 nH Coilcraft 0805 (tune for minimum power consumption) C1 2.7 pF 0805 1) 15 nH Coilcraft 0805 6.8 nH Coilcraft 0805 (tune for minimum power consumption) EHT09041 C2 C3 C4 2.2 pF 0805 R1 Not required in this application 33 pF 0805 33 pF 0805 Tune L2, C2 for maximum reflection (f = fRf) at IF-port Data Book 89 V1.0, 2001-01-01 GaAs Components Application Note No. 035 Setup 1. In order to optimize power consumption, L4 can be modified for minimum drain current: Switch on local oscillator at required LO-frequency and check the drain current. Adjust the LO-frequency to find the minimum current. If the minimum is detected at a lower frequency than the required LO-frequency, choose a lower value inductor for L4; if detected at a higher frequency, choose a higher value. 2. Matching of IF- and RF-filters L2 RF 50 L1 C1 C5 IF 50 C2 CMY210 LO IN EHT09042 Figure 2 CMY 210 External Matching Circuit IF PLO = 0 dBm RF RF 50 PLO = 0 dBm IF-matching setup IF 50 RF-matching setup EHT09043 Figure 3 IF-Matching Setup and RF-Matching Setup Usually both resonance filters (L1, C1 and L2, C2) are tuned to the RF-frequency. Filter L1, C1 passes the RF-frequency and reflects the IF-signal. Filter L2, C2 suppresses the RF-band and passes IF. An appropriate adjustment of the filters is the prerequisite to achieve a lower conversion loss. According to Figure 2 the resonance frequency of the IF-filter L2, C2 ( f re s = 1 ( 2 L 2 x C 2 ) ) can be adjusted to maximum reflection at fRF by choosing appropriate inductors and capacitors. Correspondingly, the L1, C1 resonance frequency of RF-filter can be matched with minor modification of these values according to Figure 2. Since the IF- and RF-filters are connected with the ohmic resistor of the switching FET, matching of either filter might influence the matching parameters of the other filter. Data Book 90 V1.0, 2001-01-01 GaAs Components Application Note No. 035 3. At higher LO-frequencies (> 2 GHz) the gain of the LO buffer amplifier is already decreasing, causing a slightly lower IP3IN and higher operating current. 4. The IP3IN remains very constant with changes in operating voltage. A supply voltage of less than 2 V however will decrease the intermodulation performance. Please refer to the following figure. The conversion losses LC are independent of the operating voltage as long as the switch transistor is not pinched off. The losses are mainly determined by the quality of IF- and RF-filters as mentioned in 2. IP3IN, LC vs. Operation Voltage fRF = 835 MHz, PRF = 2x-3 dBm, fLO = 1008 MHz, PLO = 0 dBm EHT09044 25 dBm IP3 IN IP3 10 dB 20 9 15 8 10 7 LC LC 5 0 6 0 1 2 3 4 5 V 6 5 VB Data Book 91 V1.0, 2001-01-01 GaAs Components Application Note No. 035 5. The figure below shows the operating current over LO-frequency. A current minimum at approximately 1010 MHz has been obtained by tuning the circuit for this LOfrequency as described in 2. Operating Current vs. LO-Frequency VD = 3 V, PLO = 0 dBm IOP EHT09045 12 mA 10 8 6 4 2 0 740 Data Book 940 1140 MHz 1440 f LO 92 V1.0, 2001-01-01 GaAs Components Application Note No. 035 6. The operation current over the operating voltage at a fixed fLO = 1008 MHz is shown in the following figure. Operation Current vs. Operation Voltage at fLO = 1008 MHz EHT09046 9.0 mA IOP 8.5 8.0 7.5 7.0 6.5 6.0 5.5 5.0 4.5 4.0 0 1 2 3 4 5 V 6 VB Data Book 93 V1.0, 2001-01-01 GaAs Components Application Note No. 035 Layout of 173 MHz to 824 - 849 MHz Up-Converter Application Board VB + 33 pF 1 nF 12 nH 2.2 pF LO 33 pF Vb + 6.8 nH CMY 210 IF RF 2.7 pF IF LO 15 nH EHT08983 15 nH Actual size 20 mm x 20 mm RF EHT09051 Figure 4 Layout of Application Board PCB - data: Glass fiber epoxy board (double sided), r = 4.8, thickness = 1.0 mm Keydata of 173 MHz to 824 - 849 MHz Up-Converter (Test conditions: VD = 3.0 V; fRF = 835 MHz; fLO = 1008 MHz; PLO = 0 dBm; fIF = 173 MHz; ZO = 50 ; TA = 25 C; unless otherwise specified) Parameter Symbol Value Operating current 5.4 mA 3rd Order Input Intercept Point IOP LC IP3IN P-1dBout (835 MHz) - > 7.5 dBm (PLO = 0 dBm) IF- /RF-Input Return Loss - > 10 dB Conversion Loss Data Book 94 6.0 dB + 23.3 dBm V1.0, 2001-01-01 CMY 210 - 233 MHz to 1.9 GHz Up-Converter Application Note No. 036 The CMY 210 is a ultralinear mixer with integrated LO-buffer for frequencies up to and exceeding 2.5 GHz. A low LO-input power of typically 0 dBm is sufficient to provide a very high input intercept point of typically 25 dBm at 3 V. The input and output ports are 50 matched. The device can be used as up- and downconverter. Application Circuit L2 C1 L1 RF 50 C5 C2 1 CMY 210 C3 L3 LO IN IF 50 6 3 4 C4 2, 5 L4 R1 VDD Figure 1 Application Circuit Table 1 List of Components L1 L2 L3 3.3 nH Coilcraft 0805 L4 C1 EHT09053 C2 C3 C4 1.5 pF 0603 3.3 nH Coilcraft 0805 (tune for minimum power consumption) C5 100 pF 0603 1.8 pF 0603 R1 Not required in this application. 3.3 nH Coilcraft 0805 3.3 nH Coilcraft 0805 (tune for minimum power consumption) Data Book 95 18 pF 0603 18 pF 0603 parallel to 1nF 0805 V1.0, 2001-01-01 GaAs Components Application Note No. 036 Setup 1. In order to optimize power consumption, L4 can be modified for minimum drain current: Switch on local oscillator at required LO-frequency and check the drain current. Adjust the LO-frequency to find the minimum current. If the minimum is detected at a lower frequency than the required LO-frequency, choose a lower value inductor for L4; if detected at a higher frequency, choose a higher value. 2. Matching of IF- and RF-filters L2 RF 50 L1 C1 C5 IF 50 C2 CMY210 LO IN EHT09042 Figure 2 CMY 210 External Matching Circuit IF PLO = 0 dBm RF RF 50 PLO = 0 dBm IF-matching setup IF 50 RF-matching setup EHT09043 Figure 3 IF-Matching Setup and RF-Matching Setup Usually both resonance filters (L1, C1 and L2, C2) are tuned to the RF-frequency. Filter L1, C1 passes the RF-frequency and reflects the IF-signal. Filter L2, C2 suppresses the RF-band and passes IF. An appropriate adjustment of the filters is the prerequisite to achieve a lower conversion loss. According to Figure 2 the resonance frequency of the IF-filter L2, C2 ( f re s = 1 ( 2 L 2 x C 2 ) ) can be adjusted to maximum reflection at fRF by choosing appropriate inductors and capacitors. Correspondingly, the L1, C1 resonance frequency of RF-filter can be matched with minor modification of these values according to Figure 2. Since the IF- and RF-filters are connected with the ohmic resistor of the switching FET, matching of either filter might influence the matching parameters of the other filter. Data Book 96 V1.0, 2001-01-01 GaAs Components Application Note No. 036 3. At higher LO-frequencies (> 2 GHz) the gain of the LO buffer amplifier is already decreasing, causing a slightly lower IP3IN and higher operating current. 4. The IP3IN remains very constant with changes in operating voltage. A supply voltage of less than 2 V however will decrease the intermodulation performance. Please refer to the following figure. The conversion losses LC are independent of the operating voltage as long as the switch transistor is not pinched off. The losses are mainly determined by the quality of IF- and RF-filters as mentioned in 2. IP3IN, LC vs. Operation Voltage fRF = 1900 MHz, PRF = 2x-3 dBm, fLO = 1670 MHz, PLO = 0 dBm EHT09054 25 dBm IP3 IN 10 dB LC IP3 20 9 15 8 10 7 LC 5 0 6 0 1 2 3 4 5 V 6 5 VB Data Book 97 V1.0, 2001-01-01 GaAs Components Application Note No. 036 5. The figure below shows the operating current over LO-frequency. A current minimum at approximately 1670 MHz has been obtained by tuning the circuit for this LOfrequency as described in 2. Operating Current vs. LO-Frequency VD = 3 V, PLO = 0 dBm IOP EHT09055 16 mA 14 12 10 8 6 4 2 0 1400 Data Book 1600 1800 MHz 2100 f LO 98 V1.0, 2001-01-01 GaAs Components Application Note No. 036 6. The operation current over the operating voltage at a fixed fLO = 1670 MHz is shown in the following figure. Operation Current vs. Operation Voltage at fLO = 1670 MHz EHT09056 11.0 mA IOP 10.0 9.5 9.0 8.5 8.0 7.5 7.0 6.5 6.0 0 1 2 3 4 5 V 6 VB Data Book 99 V1.0, 2001-01-01 GaAs Components Application Note No. 036 Layout of 233 MHz to 1.9 GHz Up-Converter Application Board VB + 18 pF LO 18 pF Vb + LO 1 nF 3.3 nH IF 1.5 pF 100 pF 3.3 nH IF CMY 210 RF 1.8 pF EHT08983 3.3 nH 3.3 nH Actual size 20 mm x 20 mm RF EHT09057 Figure 4 Layout of Application Board PCB - data: Glass fiber epoxy board (double sided), r = 4.8, thickness = 1.0 mm Keydata of 233 MHz to 1.9 GHz Up-Converter (Test conditions: VD = 3.0 V; fRF = 1.9 GHz; fLO = 1.67 GHz; PLO = 0 dBm; fIF = 233 MHz; TA = 25 C) Parameter Symbol Value Unit Operating current IOP LC IP3IN 7.7 mA 6.0 dB + 22 dBm Conversion Loss 3rd Order Input Intercept Point Data Book 100 V1.0, 2001-01-01 CMY 210 - 1960 MHz to 110 MHz Down-Converter Application Note No. 037 The CMY 210 is a ultralinear mixer with integrated LO-buffer for frequencies up to and exceeding 2.5 GHz. A low LO-input power of typically 0 dBm is sufficient to provide a very high input intercept point of typically + 25 dBm at 3 V. The input and output ports are 50 matched. The device can be used as up- and downconverter. Application Circuit L2 C1 L1 C5 RF IN C2 1 CMY 210 C3 L3 LO IN 6 3 4 C6 C4 2, 5 L4 R1 VDD Figure 1 Application Circuit Table 1 List of Components L1 L2 L3 IF OUT EHT09047 C3 3.3 nH Coilcraft 0805 C4 2.2 - 2.7 nH or printed coil (tune for C5 3.3 nH Coilcraft 0805 12 pF 0805 12 pF 0805 parallel to 0.47 F 150 pF 0805 minimum power consumption) L4 3.3 nH Coilcraft 0805 (tune for minimum power consumption) C6 Not required in this application C1 C2 1.8 pF 0805 R1 Not required in this application 1.2 pF 0805 Data Book 101 V1.0, 2001-01-01 GaAs Components Application Note No. 037 Setup 1. In order to optimize power consumption, L4 can be modified for minimum drain current: Switch on local oscillator at required LO-frequency and check the drain current. Adjust the LO-frequency to find the minimum current. If the minimum is detected at a lower frequency than the required LO-frequency, choose a lower value inductor for L4; if detected at a higher frequency, choose a higher value. 2. Matching of IF- and RF-filters L2 RF 50 L1 C1 C5 IF 50 C2 CMY210 LO IN EHT09042 Figure 2 CMY 210 External Matching Circuit IF PLO = 0 dBm RF RF 50 PLO = 0 dBm IF-matching setup IF 50 RF-matching setup EHT09043 Figure 3 IF-Matching Setup and RF-Matching Setup Usually both resonance filters (L1, C1 and L2, C2) are tuned to the RF-frequency. Filter L1, C1 passes the RF-frequency and reflects the IF-signal. Filter L2, C2 suppresses the RF-band and passes IF. An appropriate adjustment of the filters is the prerequisite to achieve a lower conversion loss. According to Figure 2 the resonance frequency of the IF-filter L2, C2 ( f re s = 1 ( 2 L 2 x C 2 ) ) can be adjusted to maximum reflection at fRF by choosing appropriate inductors and capacitors. Correspondingly, the L1, C1 resonance frequency of RF-filter can be matched with minor modification of these values according to Figure 2. Since the IF- and RF-filters are connected with the ohmic resistor of the switching FET, matching of either filter might influence the matching parameters of the other filter. Data Book 102 V1.0, 2001-01-01 GaAs Components Application Note No. 037 3. At higher LO-frequencies (> 2 GHz) the gain of the LO buffer amplifier is already decreasing, causing a slightly lower IP3IN and higher operating current. 4. The IP3IN remains very constant with changes in operating voltage. A supply voltage of less than 2 V however will decrease the intermodulation performance. Please refer to the following figure. The conversion losses LC are independent of the operating voltage as long as the switch transistor is not pinched off. The losses are mainly determined by the quality of IF- and RF-filters as mentioned in 2. IP3IN, LC vs. Operation Voltage fRF = 1960 MHz, PRF = 2x-3 dBm, fLO = 2070 MHz, PLO = 0 dBm EHT09058 25 dBm IP3 IN 10 dB IP3 20 9 15 8 10 7 LC LC 5 0 6 0 1 2 3 4 5 V 6 5 VB Data Book 103 V1.0, 2001-01-01 GaAs Components Application Note No. 037 5. The figure below shows the operating current over LO-frequency. A current minimum at approximately 2070 MHz has been obtained by tuning the circuit for this LOfrequency as described in 2. Operating Current vs. LO-Frequency VD = 3 V, PLO = 0 dBm IOP EHT09059 16 mA 14 12 10 8 6 4 2 0 1800 Data Book 2000 2200 MHz 2500 f LO 104 V1.0, 2001-01-01 GaAs Components Application Note No. 037 6. The operation current over the operating voltage at a fixed fLO = 2070 MHz is shown in the following figure. Operation Current vs. Operation Voltage at fLO = 2070 MHz EHT09060 11.0 mA IOP 10.0 9.5 9.0 8.5 8.0 7.5 7.0 6.5 6.0 0 1 2 3 4 5 V 6 VB Data Book 105 V1.0, 2001-01-01 GaAs Components Application Note No. 037 Layout of 1960 MHz to 110 MHz Down-Converter VB + LO Vb + 12 pF LO 1.2 pF 2.2-2.7 nH 1.2 pF 3.3 nH IF CMY 210 RF 1.8 pF IF EHT08983 3.3 nH 3.3 nH Actual size 20 mm x 20 mm RF EHT09061 Figure 4 Layout of Application Board PCB - data: Glass fiber epoxy board (double sided), r = 4.8, thickness = 1.0 mm Keydata of 1960 MHz to 110 MHz Down-Converter (Test conditions: VD = 3.0 V; fRF = 1960 MHz 0.5 MHz; PRF = 2 x - 3 dBm; fLO = 2070 MHz; PLO = 0 dBm; fIF = 110 MHz; TA = 25 C) Parameter Symbol Value Unit Operating current 8.1 mA 5.9 dB 3rd Order Input Intercept Point IOP LC IP3IN + 22.6 dBm RF- /IF-Input Return Loss IRL > 12 dB Conversion Loss 2nd order intermodulation (Test conditions: fRF = 1960 MHz; PRF = - 3 dBm; fLO = 2070 MHz; PLO = 0 dBm) Data Book 106 V1.0, 2001-01-01 CMY 210 - 880 MHz to 85 MHz Down-Converter Application Note No. 038 The CMY 210 is a ultralinear mixer with integrated LO-buffer for frequencies up to and exceeding 2.5 GHz. A low LO-input power of typically 0 dBm is sufficient to provide a very high input intercept point of typically 25 dBm at 3 V. The input and output ports are 50 matched. The device can be used as up- and downconverter. Application Circuit The mixer CMY 210 itself consists of a GaAs-FET used as a passive switch in parallel to the signal path. The LO-input power is amplified by a controlled amplifier which improves the overall performance. L2 C1 L1 C5 RF IN IF OUT C2 1 CMY 210 C3 L3 LO IN 6 3 4 C6 C4 2, 5 L4 R1 VDD Figure 1 Application Circuit Table 1 List of Components L1 L2 L3 L4 C1 8.2 nH Coilcraft 0805 8.2 nH Coilcraft 0805 6.8 nH Coilcraft 0805 15 nH Coilcraft 0805 3.9 pF 0603 Data Book C2 C3 C4 C5, C6 R1 EHT09047 3.9 pF 0603 33 pF 0603 33 pF 0603 parallel to 1 nF 0805 and 1 F Not required in this application Not required in this application 107 V1.0, 2001-01-01 GaAs Components Application Note No. 038 Setup 1. In order to optimize power consumption, L4 can be modified for minimum drain current: Switch on the local oscillator at the required LO-frequency and check the drain current. Adjust the LO-frequency to find the minimum current. If the minimum is detected at a lower frequency than the required LO-frequency, choose a lower value inductor for L4; if detected at a higher frequency, choose a higher value. 2. Matching of IF- and RF-filters L2 RF 50 L1 C1 C5 IF 50 C2 CMY210 LO IN EHT09042 Figure 2 CMY 210 External Matching Circuit IF PLO = 0 dBm RF RF 50 PLO = 0 dBm IF-matching setup IF 50 RF-matching setup EHT09043 Figure 3 IF-Matching Setup and RF-Matching Setup Usually both resonance filters (L1, C1 and L2, C2) are tuned to the RF-frequency. Filter L1, C1 passes the RF-frequency and reflects the IF-signal. Filter L2, C2 suppresses the RF-band and passes IF. An appropriate adjustment of the filters is the prerequisite to achieve a lower conversion loss. According to Figure 2 the resonance frequency of the IF-filter L2, C2 ( f re s = 1 ( 2 L 2 x C 2 ) ) can be adjusted to maximum reflection at fRF by choosing appropriate inductors and capacitors. Correspondingly, the L1, C1 resonance frequency of RF-filter can be matched with minor modification of these values according to Figure 2. Since the IF- and RF-filters are connected with the ohmic resistor of the switching FET, matching of either filter might influence the matching parameters of the other filter. Data Book 108 V1.0, 2001-01-01 GaAs Components Application Note No. 038 3. At higher LO-frequencies (> 2 GHz) the gain of the LO buffer amplifier is already decreasing, causing a slightly lower IP3IN and higher operating current. 4. The IP3IN remains very constant with changes in operating voltage. A supply voltage of less than 2 V however will decrease the intermodulation performance. Please refer to the following figure. The conversion losses LC are independent of the operating voltage as long as the switch transistor is not pinched off. The losses are mainly determined by the quality of IF- and RF-filters as mentioned in 2. IP3IN, LC vs. Operation Voltage fRF = 880 MHz, PRF = 2x-3 dBm, fLO = 965 MHz, PLO = 0 dBm EHT09048 25 dBm IP3 IP3 IN 10 dB 20 9 15 8 10 7 5 0 6 LC 0 1 LC 2 3 4 5 V 6 5 VB Data Book 109 V1.0, 2001-01-01 GaAs Components Application Note No. 038 5. The figure below shows the operating current over LO-frequency. A current minimum at approximately 965 MHz has been obtained by tuning the circuit for this LOfrequency as described in 2. Operating Current vs. LO-Frequency VD = 3 V, PLO = 0 dBm IOP EHT09049 12 mA 10 8 6 4 2 0 665 Data Book 865 1065 MHz 1365 f LO 110 V1.0, 2001-01-01 GaAs Components Application Note No. 038 6. The operation current over the operating voltage at a fixed fLO = 965 MHz is shown in the following figure. Operation Current vs. Operation Voltage at fLO = 965 MHz IOP EHT09050 7.5 mA 7.0 6.5 6.0 5.5 5.0 4.5 4.0 0 1 2 3 4 5 V 6 VB Data Book 111 V1.0, 2001-01-01 GaAs Components Application Note No. 038 Layout of 880 MHz to 85 MHz Down-Converter Application Board VB + 33 pF 15 nH LO 33 pF Vb + LO 6.8 nH 3.3 pF IF CMY 210 RF 3.9 pF IF EHT08983 8.2 nH 8.2 nH Actual size 20 mm x 20 mm RF EHT09052 Figure 4 Layout of Application Board PCB - data: Glass fiber epoxy board (double sided), r = 4.8, thickness = 1.0 mm Characteristics of 880 MHz to 85 MHz Down-Converter Application Board (Test conditions: VD = 3.0 V; fRF = 880 MHz; fLO = 965 MHz; PLO = 0 dBm; fIF = 85 MHz; TA = 25 C; ZO = 50 ) Parameter Symbol Value Unit Operating current 4.9 mA 5.5 dB 3rd Order Input Intercept Point IOP LC IP3IN + 23.8 dBm Return Loss (RF- /IF-Port) RL > 12 dB Data Book 112 Conversion Loss V1.0, 2001-01-01 CMY 91 - Down-Converter Application Circuit for PHP Systems Application Note No. 040 The PHP cordless telephone standard operates in the 1900 MHz band. This application note describes the use of the CMY 91 as a first down conversion mixer of a PHP receiver. The CMY 91 is packaged in a SOT-23 sized package, operates from a single positive 3 V supply and has a low power consumption. Application Circuit The CMY 91 consists of a mixer (GaAs-FET), followed by a IF amplifier in series with the signal path. The resulting IF signal is then amplified by a selfbiased amplifier to give an overall conversion gain of typically 7 dB. RF IN 1906.55 MHz 100 pF VDC = 3 V 5 nH or Printed Inductor 1) 390 2) RF IN 6 1 nF CAP(1) CMY 91 1 3 IF OUT 4 68 nH 3) 1 nF 6.8 pF 10 pF 2, 5 GND LO IN 12 nH or Printed Inductor 1) IF OUT 243.95 MHz LO IN 1662.6 MHz EHT09065 Figure 1 1) 2) Serial resonance circuits: Tune for optimum input return loss. Optional resistor. This increases the IF-amplifier operating current, improving conversion gain and intermodulation performance 3) SIMID 01-coil; Ordering code: B82412-A3680-M Data Book 113 V1.0, 2001-01-01 GaAs Components Application Note No. 040 Setup 1. The input RF filter consists of a serial resonance circuit made up of a capacitor and a printed inductor. Matching to the RF input frequency can be performed by changing the layout of the printed inductor or by changing the capacitor value. 2. For the IF port the resonance transformer has to be matched for IF frequency either by modifying the inductor or the ratio of capacitances. 3. The LO port can be used broadband or can be matched to the LO-frequency by adjusting the length of the printed inductor depending on the particular application. 4. As described in annotation 2 above, an optional resistor at pin 1 can be used to increase the IF-amplifier operating current to improve conversion gain and intermodulation performance. PHP - Application Board CMY 91 LO CMY 91 LO 68 nH 6.8 pF 1 nF 10 pF IF RF 100 pF 390 EHT09067 IF Actual size 20 mm x 20 mm RF Soldered shorting line for tuning the RF-match EHT09066 Figure 2 Layout of Application Board CMY 91 PCB-data: Glass fiber epoxy board; r = 4.8; thickness = 1 mm Data Book 114 V1.0, 2001-01-01 GaAs Components Application Note No. 040 Characteristics of PHP - Application Board (fRF = 1.90655 GHz; fLO = 1.6626 GHz; fIF = 243.95 MHz; TA = 25 C; ID = 2.7 mA, R = 390 ) Conversion Gain GC PLO GC @ VD = 3.0 V GC @ VD = 2.7 V - 13 dBm 0.7 dB 0.4 dB - 10 dBm 2.8 dB 2.5 dB - 7 dBm 4.2 dB 3.9 dB - 3 dBm 5.2 dB 4.9 dB 0 dBm 5.4 dB 5.3 dB 3 dBm 5.7 dB 5.4 dB 7 dBm 6.4 dB 5.9 dB 10 dBm 5.0 dB 2.0 dB 3rd Order Input Intercept Point IP3IN PLO IP3IN @ VD = 3.0 V IP3IN @ VD = 2.7 V - 13 dBm - 2.4 dBm - 2.3 dBm - 10 dBm - 1.2 dBm - 1.2 dBm - 7 dBm 1.5 dBm 1.4 dBm - 3 dBm 5.5 dBm 5.8 dBm 0 dBm 7.3 dBm 6.9 dBm 3 dBm 5.1 dBm 5.3 dBm 7 dBm 3.5 dBm 3 dBm 10 dBm - 0.5 dBm - 3.95 dBm Single Sideband Noise Figure FSSB PLO FSSB @ VD = 3.0 V FSSB @ VD = 2.7 V - 13 dBm 13.6 dB 13.6 dB - 10 dBm 11.3 dB 11.3 dB - 7 dBm 9.7 dB 9.9 dB - 3 dBm 9.0 dB 8.9 dB 0 dBm 8.5 dB 8.5 dB 3 dBm 8.5 dB 8.5 dB 7 dBm 9.4 dB 9.0 dB 10 dBm 10.6 dB 10.7 dB Data Book 115 V1.0, 2001-01-01 GaAs Components Application Note No. 040 Characteristics of PHP - Application Board (cont'd) (fRF = 1.90655 GHz; fLO = 1.6626 GHz; fIF = 243.95 MHz; TA = 25 C; ID = 2.7 mA, R = 390 ) LO - RF Isolation PLO ISO @ VD = 3.0 V ISO @ VD = 2.7 V - 13 dBm 13.2 dB 13.3 dB - 10 dBm 13.7 dB 13.4 dB - 7 dBm 13.9 dB 13.5 dB - 3 dBm 14.3 dB 13.7 dB 0 dBm 14.5 dB 13.9 dB 3 dBm 14.8 dB 14.2 dB 7 dBm 14.6 dB 14.3 dB 10 dBm 14.3 dB 14.1 dB Data Book 116 V1.0, 2001-01-01 CF 750 - 1850 MHz to 350 MHz Down-Converter Application Note No. 041 CF 750 is a GaAs-MMIC for amplifier and mixer applications for frequencies up to 3 GHz. It is suitable for use in handheld equipment with low power consumption requirements. Since the CF 750 is not matched to 50 the following design rules have to be considered. Application Circuit VB 1 F 100 pF 12 pF 56 nH CF 750 1) 3.3 pF IF OUT 350 MHz 2 D G 3 4 S 1.5 pF RF IN 1850 MHz Printed Coil 100 pF LO IN 1500 MHz 3.3 pF 2.2 pF 1 Printed Coil GND EHT09068 Figure 1 1) Coil series SIMID 01; Ordering code: B82412-A3560-M Setup LO-port (Source): The LO signal must be matched to the high impedance of the LO-port. This matching circuit should also present a short to ground for IF frequencies to avoid a negative feedback of the IF signal by the source resistor. Most of the problems with low conversion gain are a result of insufficient IF-grounding of the source. RF-port (Gate): For frequencies up to 3 GHz the input impedance of a GaAs FET is capacitive with a negligible (very high) real part. The easiest way to transform from 50 to the gate impedance is by using a parallel resonant circuit; note, however, that the input capacitance of the FET should be subtracted from the capacitor value used in this circuit. The mixing mechanism of the CF 750 uses the source-gate1 region and the Schottky contact as mixing element, which means that the gate transforming circuit should ideally Data Book 117 V1.0, 2001-01-01 GaAs Components Application Note No. 041 be as low impedance as possible for the LO frequency. This also increases the LO-RF isolation. IF-port (Drain): The IF output signal is superimposed on the supply current of the device. The easiest way, therefore, of decoupling the IF signal is a 4:1 (turns ratio) transformer at the drain port, which can either be broadband (ferrite toroid transformer) or resonant. Optimum performance is achieved by using a resonant transformer for the IF frequency. For the LO and RF frequencies this transformer (especially the capacitor) and the following blocking capacitor should present a short circuit to ground. With suitable input matching the single sideband noise figure of the mixer can be optimized to values better than 7 dB in the 1900 MHz region. Layout of 1850 MHz to 350 MHz Down-Converter Application Board Soldered shorting line for tuning the RF-match VB RF 12 pF IF CF 750 RF 3.3 pF IF LO EHT09070 1.5 pF CF 750 Actual size 20 mm x 20 mm 2.2 pF LO Soldered shorting line for tuning the LO-match EHT09069 Figure 2 Layout of Application Board PCB-data: Glass fiber epoxy board; r = 4.8; thickness = 1 mm Data Book 118 V1.0, 2001-01-01 GaAs Components Application Note No. 041 Characteristics of 1850 MHz to 350 MHz Down-Converter Application Board (fRF = 1850 MHz; fLO = 1500 MHz; fIF = 350 MHz; VD = 4.5 V; TA = 25 C) Parameter Symbol Value Unit Condition Drain Current ID 2.9 mA 3.0 mA 3.2 mA 12.7 dB 12.5 dB 12.0 dB - 3.5 dBm -1 dBm + 1.5 dBm 6.0 dB 5.9 dB 6.0 dB PLO = - 3 dBm PLO = 0 dBm PLO = + 3 dBm PLO = - 3 dBm PLO = 0 dBm PLO = + 3 dBm PLO = - 3 dBm PLO = 0 dBm PLO = + 3 dBm PLO = - 3 dBm PLO = 0 dBm PLO = + 3 dBm Conversion Gain 3rd Order Input Intercept Point Single Sideband Noise Figure Data Book GC IP3IN FSSB 119 V1.0, 2001-01-01 CF 750 - 1500 MHz to 130 MHz Down-Converter Application Note No. 042 CF 750 is a GaAs-MMIC for amplifier and mixer applications for frequencies up to 3 GHz. It is suitable for use in handheld equipment with low power consumption requirements. Since the CF 750 is not matched to 50 the following design rules have to be considered. Application Circuit VB 1 nF 33 pF 220 nH CF 750 1) 6.8 pF IF OUT 130 MHz 2 D G 3 4 S 1.2 pF RF IN 1489 MHz Printed Coil 100 pF LO IN 1359 MHz 3.9 pF 4.7 pF 1 Printed Coil GND EHT09071 Figure 1 1) SIMID 01-coil; Ordering code: B82412-A3221-K Setup LO-port (Source): The LO signal must be matched to the high impedance of the LO-port. This matching circuit should also present a short to ground for IF frequencies to avoid a negative feedback of the IF signal by the source resistor. Most of the problems with low conversion gain are a result of insufficient IF-grounding of the source. RF-port (Gate): For frequencies up to 3 GHz the input impedance of a GaAs FET is capacitive with a negligible (very high) real part. The easiest way to transform from 50 to the gate impedance is by using a parallel resonant circuit; note, however, that the input capacitance of the FET should be subtracted from the capacitor value used in this circuit. The mixing mechanism of the CF 750 uses the source-gate1 region and the Schottky contact as mixing element, which means that the gate transforming circuit should ideally Data Book 120 V1.0, 2001-01-01 GaAs Components Application Note No. 042 be as low impedance as possible for the LO frequency. This also increases the LO-RF isolation. IF-port (Drain): The IF output signal is superimposed on the supply current of the device. The easiest way, therefore, of decoupling the IF signal is a 4:1 (turns ratio) transformer at the drain port, which can either be broadband (ferrite toroid transformer) or resonant. Optimum performance is achieved by using a resonant transformer for the IF frequency. For the LO and RF frequencies this transformer (especially the capacitor) and the following blocking capacitor should present a short circuit to ground. With suitable input matching the single sideband noise figure of the mixer can be optimized to values better than 7 dB in the 1500 MHz region. Layout of 1500 MHz to 130 MHz Down-Converter Application Board Soldered shorting line for tuning the RF-match VB RF IF 33 pF CF 750 RF LO 6.8 pF IF 1.2 pF EHT09073 Actual size 20 mm x 20 mm CF 750 4.7 pF LO Soldered shorting line for tuning the LO-match EHT09072 Figure 2 Layout of Application Board PCB-data: Glass fiber epoxy board; r = 4.8; thickness = 1 mm Data Book 121 V1.0, 2001-01-01 GaAs Components Application Note No. 042 Characteristics of 1500 MHz to 130 MHz Down-Converter Application Board (fRF = 1489 MHz; fLO = 1359 MHz; fIF = 130 MHz; TA = 25 C) Table 1 PLO Drain Current ID ID @ VD = 2.7 ... 3.0 V [dBm] [mA] - 10 2.4 -9 2.4 -8 2.45 -7 2.5 -6 2.5 -3 2.6 Table 2 Conversion Gain GC PLO [dBm] GC @ VD = 2.7 V [dB] GC @ VD = 3.0 V GC @ VD = 3.3 V - 10 11.7 11.9 12.0 -9 12.5 12.7 12.8 -8 13.3 13.5 13.7 -7 13.8 14.0 14.2 -6 14.4 14.6 14.6 -3 15.0 15.2 15.2 Table 3 [dB] [dB] 3rd Order Input Intercept Point IP3IN PLO IP3IN @ VD = 2.7 V [dBm] [dBm] [dBm] - 10 - 9.1 - 7.8 - 7.6 -9 - 10.8 - 8.7 - 8.3 -8 - 11.8 - 9.0 - 8.8 -7 - 12.2 - 9.4 - 8.6 -6 - 12.5 - 9.7 - 8.1 -3 - 14.0 - 10.2 - 6.4 [dBm] Data Book IP3IN @ VD = 3.0 V 122 IP3IN @ VD = 3.3 V V1.0, 2001-01-01 GaAs Components Application Note No. 042 Table 4 Single Sideband Noise Figure FSSB PLO FSSB @ VD = 2.7 V FSSB @ VD = 3.0 V FSSB @ VD = 3.3 V - 10 7.10 7.05 7.05 -9 6.65 6.60 6.60 -8 6.25 6.25 6.20 -7 6.05 6.00 6.00 -6 5.90 5.85 5.85 -3 5.75 5.70 5.70 [dBm] Data Book [dB] [dB] 123 [dB] V1.0, 2001-01-01 CF 750 - 950 MHz to 75 MHz Down-Converter Application Note No. 043 CF 750 is a GaAs-MMIC for amplifier and mixer applications for frequencies up to 3 GHz. It is suitable for use in handheld equipment with low power consumption requirements. Since the CF 750 is not matched to 50 the following design rules have to be considered. Application Circuit VB 10 nF 1 nF 47 pF 390 nH CF 750 1) 15 pF IF OUT 74.4 MHz 2 D G 3 4 S 1.5 pF RF IN 947.95 MHz Printed Coil 100 pF LO IN 873.55 MHz 4.7 pF 6.8 pF 1 Printed Coil GND EHT09074 Figure 1 1) SIMID 01-coil; Ordering code: B82412-A3391-M Setup LO-port (Source): The LO signal must be matched to the high impedance of the LO-port. This matching circuit should also present a short to ground for IF frequencies to avoid a negative feedback of the IF signal by the source resistor. Most of the problems with low conversion gain are a result of insufficient IF-grounding of the source. RF-port (Gate): For frequencies up to 3 GHz the input impedance of a GaAs FET is capacitive with a negligible (very high) real part. The easiest way to transform from 50 to the gate impedance is by using a parallel resonant circuit; note, however, that the input capacitance of the FET should be subtracted from the capacitor value used in this circuit. The mixing mechanism of the CF 750 uses the source-gate1 region and the Schottky contact as mixing element, which means that the gate transforming circuit should ideally Data Book 124 V1.0, 2001-01-01 GaAs Components Application Note No. 043 be as low impedance as possible for the LO frequency. This also increases the LO-RF isolation. IF-port (Drain): The IF output signal is superimposed on the supply current of the device. The easiest way, therefore, of decoupling the IF signal is a 4:1 (turns ratio) transformer at the drain port, which can either be broadband (ferrite toroid transformer) or resonant. Optimum performance is achieved by using a resonant transformer for the IF frequency. For the LO and RF frequencies this transformer (especially the capacitor) and the following blocking capacitor should present a short circuit to ground. With suitable input matching the single sideband noise figure of the mixer can be optimized to values better than 6 dB in the 900 MHz region. Layout of 950 MHz to 75 MHz Down-Converter Application Board Shorting line for tuning the RF-match VB RF IF CF 750 47 pF LO RF EHT09076 15 pF 1.5 pF IF Actual size 20 mm x 20 mm CF 750 6.8 pF LO EHT09075 Figure 2 Layout of Application Board PCB-data: Glass fiber epoxy board; r = 4.8; thickness = 1 mm Data Book 125 V1.0, 2001-01-01 GaAs Components Application Note No. 043 Characteristics of 950 MHz to 75 MHz Down-Converter Application Board (fRF = 947.95 MHz; fLO = 873.55 MHz; fIF = 74.4 MHz; TA = 25 C) Drain Current ID PLO = 0 dBm PLO = - 8 dBm VD = 2.7 ... 5 V VD = 2.7 ... 5 V ID = 3.1 mA ID = 2.7 mA Conversion Gain GC PLO = 0 dBm VD = 2.7 V VD = 3.2 V VD = 3.8 V VD = 5.0 V PLO = - 8 dBm VD = 2.7 V VD = 3.2 V VD = 3.8 V VD = 5.0 V 3rd Order Input Intercept Point IP3IN PLO = 0 dBm VD = 2.7 V VD = 3.2 V VD = 3.8 V VD = 5.0 V PLO = - 8 dBm VD = 2.7 V VD = 3.2 V VD = 3.8 V VD = 5.0 V Single Sideband Noise Figure FSSB PLO = 0 dBm VD = 2.7 ... 5 V PLO = - 8 dBm VD = 2.7 ... 5 V Data Book 126 GC = 15.2 dB GC = 16.3 dB GC = 16.8 dB GC = 17.0 dB GC = 13.8 dB GC = 14.2 dB GC = 14.3 dB GC = 14.5 dB IP3IN = - 11 dBm IP3IN = - 9 dBm IP3IN = - 7 dBm IP3IN = - 6.5 dBm IP3IN = - 10.5 dBm IP3IN = - 9.5 dBm IP3IN = - 9 dBm IP3IN = - 9 dBm FSSB = 4.6 dB FSSB = 5.4 dB V1.0, 2001-01-01 CF 750 - 250 MHz to 1900 MHz Up-Converter Application Note No. 044 CF 750 is a GaAs-MMIC for amplifier and mixer applications for frequencies up to 3 GHz. It is suitable for use in handheld equipment with low power consumption requirements. Since the CF 750 is not matched to 50 the following design rules have to be considered. Application Circuit IF OUT 1900 MHz VB 1 nF 12 pF Printed Coil 12 pF CF 750 3.9 pF 6.5 nH 1) 2 D G 3 4 S 4.7 pF RF IN 250 MHz 18 pF 82 nH 2) 27 pF 1 pF 1 LO IN 1650 MHz Printed Coil GND EHT09077 Figure 1 1) 2) Spiral inductor. Tune for optimum IF - match SIMID 01-coil; Ordering code: B82412-A3820-K Setup LO-port (Source): The LO signal must be matched to the high impedance of the LO-port. This matching circuit should also present a short to ground for IF frequencies to avoid a negative feedback of the IF signal by the source resistor. Most of the problems with low conversion gain are a result of insufficient IF-grounding of the source. RF-port (Gate): For frequencies up to 3 GHz the input impedance of a GaAs FET is capacitive with a negligible (very high) real part. The easiest way to transform from 50 to the gate impedance is by using a parallel resonant circuit; note, however, that the input Data Book 127 V1.0, 2001-01-01 GaAs Components Application Note No. 044 capacitance of the FET should be subtracted from the capacitor value used in this circuit. The mixing mechanism of the CF 750 uses the source-gate1 region and the Schottky contact as mixing element, which means that the gate transforming circuit should ideally be as low impedance as possible for the LO frequency. This also increases the LO-RF isolation. IF-port (Drain): The IF output signal is superimposed on the supply current of the device. The easiest way, therefore, of decoupling the IF signal is a 4:1 (turns ratio) transformer at the drain port, which can either be broadband (ferrite toroid transformer) or resonant. Optimum performance is achieved by using a resonant transformer for the IF frequency. For the LO and RF frequencies this transformer (especially the capacitor) and the following blocking capacitor should present a short circuit to ground. With suitable input matching the single sideband noise figure of the mixer can be optimized to values better than 7 dB in the 1900 MHz region. Up-Converter Application Circuit 1 nF 12 pF VB IF 27 pF 6.5 nH RF 12 pF IF RF LO 3.9 pF 4.7 pF EHT09079 Actual size 20 mm x 20 mm 18 pF 1 pF LO CF 750UP CF 750UP EHT09078 Figure 2 Layout of Application Board PCB-data: Glass fiber epoxy board; r = 4.8; thickness = 1 mm Data Book 128 V1.0, 2001-01-01 GaAs Components Application Note No. 044 Characteristics of 250 MHz to 1900 MHz Up-Converter Application Board (fRF = 250 MHz; fLO = 1650 MHz; fIF = 1900 MHz; TA = 25 C) Drain Current Id PLO = 0 dBm PLO = - 10 dBm VD = 2.7 ... 3.3 V VD = 2.7 ... 3.3 V ID = 2.3 mA ID = 2.0 mA Conversion Gain GC PLO = 0 dBm VD = 2.7 V VD = 3.0 V VD = 3.3 V PLO = - 10 dBm VD = 2.7 V VD = 3.0 V VD = 3.3 V 3rd Order Input Intercept Point IP3IN PLO = 0 dBm VD = 2.7 V VD = 3.0 V VD = 3.3 V PLO = - 10 dBm VD = 2.7 V VD = 3.0 V VD = 3.3 V GC = 17.2 dB GC = 19.4 dB GC = 19.4 dB GC = 15.2 dB GC = 15.3 dB GC = 15.2 dB IP3IN = - 6.8 dBm IP3IN = - 6.0 dBm IP3IN = - 5.5 dBm IP3IN = - 9 dBm IP3IN = - 3 dBm IP3IN = 1 dBm Output Power at 1dB Gain Compression P-1db PLO = 0 dBm PLO = - 10 dBm Data Book VD = 2.7 V VD = 3.0 V VD = 3.3 V VD = 2.7 V VD = 3.0 V VD = 3.3 V P-1dB = - 14 dBm P-1dB = - 10.5 dBm P-1dB = - 6 dBm P-1dB = - 12.5 dBm P-1dB = - 10.5 dBm P-1dB = - 9.5 dBm 129 V1.0, 2001-01-01 CF 750 - 50 MHz to 865 MHz Up-Converter Application Note No. 045 CF 750 is a GaAs-MMIC for amplifier and mixer applications for frequencies up to 3 GHz. It is suitable for use in handheld equipment with low power consumption requirements. Since the CF 750 is not matched to 50 the following design rules have to be considered. Application Circuit IF OUT 865 MHz VB 1 nF 27 pF 27 pF 47 nH 1) CF 750 2.2 pF 33 nH 2) 2 D 10 pF + 3.3 pF Parallel RF IN 50 MHz G 3 270 4 S 27 pF VC 100 pF 820 nH 3) 68 pF 3.3 pF 1 LO IN 815 MHz Printed Coil GND EHT09080 Figure 1 1) 2) 3) Surface mount inductor 47 nH; Coilcraft ordering code 0805CS-470-XMBC Surface mount inductor 33 nH; Coilcraft ordering code 0805CS-330-XMBC Surface mount inductor 820 nH; Series SIMID 01; Ordering code: B82412-A3820-K Data Book 130 V1.0, 2001-01-01 GaAs Components Application Note No. 045 Setup LO-port (Source): The LO signal must be matched to the high impedance of the LO-port. This matching circuit should also present a short to ground for IF frequencies to avoid a negative feedback of the IF signal by the source resistor. Most of the problems with low conversion gain are a result of insufficient IF-grounding of the source. RF-port (Gate): For frequencies up to 3 GHz the input impedance of a GaAs FET is capacitive with a negligible (very high) real part. The easiest way to transform from 50 to the gate impedance is by using a parallel resonant circuit; note, however, that the input capacitance of the FET should be subtracted from the capacitor value used in this circuit. The mixing mechanism of the CF 750 uses the source-gate1 region and the Schottky contact as mixing element, which means that the gate transforming circuit should ideally be as low impedance as possible for the LO frequency. This also increases the LO-RF isolation. IF-port (Drain): The IF output signal is superimposed on the supply current of the device. The easiest way, therefore, of decoupling the IF signal is a 4:1 (turns ratio) transformer at the drain port, which can either be broadband (ferrite toroid transformer) or resonant. Optimum performance is achieved by using a resonant transformer for the IF frequency. For the LO and RF frequencies this transformer (especially the capacitor) and the following blocking capacitor should present a short circuit to ground. With suitable input matching the single sideband noise figure of the mixer can be optimized to values better than 6 dB in the 900 MHz region. Layout of 50 MHz to 865 MHz Up-Converter Application Circuit 1 nF 27 pF VB 13.3 pF 1) VB 820 nH 33 nH 47 nH 100 pF IF RF 68 pF 2.2 pF 270 LO CF 750UP EHT09082 3.3 pF 27 pF Actual size 20 mm x 20 mm CF 750UP EHT09081 1) 10 pF + 3.3 pF parallel Figure 2 Layout of Application Circuit PCB-data: glass fiber epoxy board; r = 4.8; thickness = 1 mm Data Book 131 V1.0, 2001-01-01 GaAs Components Application Note No. 045 Characteristics of 50 MHz to 865 MHz Up-Converter Application Board (fRF = 50 MHz; fLO = 815 MHz; fIF = 865 MHz; TA = 25 C) (No control voltage applied unless otherwise specified!) Drain Current Id PLO = 0 dBm PLO = - 3 dBm VD = 2.7 ... 3.3 V VD = 2.7 ... 3.3 V ID = 2.3 mA ID = 2.2 mA Conversion Gain Gc PLO = 0 dBm VD = 2.7 V VD = 3.0 V VD = 3.3 V PLO = - 3 dBm VD = 2.7 V VD = 3.0 V VD = 3.3 V 3rd Order Input Intercept Point IP3o PLO = 0 dBm VD = 2.7 V VD = 3.0 V VD = 3.3 V PLO = - 3 dBm VD = 2.7 V VD = 3.0 V VD = 3.3 V GC = 14.2 dB GC = 15.8 dB GC = 15.5 dB GC = 15.2 dB GC = 15.0 dB GC = 14.5 dB IP3o = - 2.1 dBm IP3o = - 1.7 dBm IP3o = - 1.8 dBm IP3o = - 4.5 dBm IP3o = - 0.83 dBm IP3o = 1.33 dBm Output Power at 1dB Gain Compression P-1db PLO = 0 dBm VD = 3.0 V P-1dB = - 8.7 dBm VD = 3.0 V VC = 0 ... 3 V GC > 65 dB VD = 3.0 V VC = 3 V ICmax = 4.4 mA Control Dynamic Range PLO = 0 dBm Control Current PLO = 0 dBm Data Book 132 V1.0, 2001-01-01 CSY 240 - Bidirectional GaAs SPDT Switch with Positive 3 V (5 V) Switching Supply Application Note No. 046 With its low insertion loss, high Tx/Rx-isolation and high input power capabiltiy in the 0.5 - 3.5 GHz range the CSY 240 is a fast GaAs-switch for Tx/Rx- and diversity switch applications in mobile communications and 2.45 GHz - WLAN applications. The device can be switched with a + 3 V (+ 5 V) / 0 V positive supply. Switch Control / VC2 4 CSY240 Tx 1) 3 6 Rx / VC1 Antenna 1 MW-6 2, 5 VD EHT09083 Figure 1 1) MW-6 package, dimensions of plastic body according to SOT 23 with 6 leads Table 1 Maximum Ratings Parameter Symbol Value Unit Supply voltage range VD VC1 / VC2 TCh Tstg Ptot 0...7 V 0...7 V 150 C - 55 ... + 150 C t.b.d. mW Control voltage range Channel temperature Storage temperature range Total power dissipation (TS t.b.d. C)1) 1) Please care for sufficient heat dissipation on the pcb! Table 2 Thermal Resistance Parameter Symbol Value Unit Channel-soldering point (GND) RthChS RthChA t.b.d. K/W < t.b.d. K/W Channel-ambient1) 1) Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm Data Book 133 V1.0, 2001-01-01 GaAs Components Application Note No. 046 Test and Application Circuit Switch Control / VC2 4 CSY240 CC Tx 3 Tx 6 Antenna CC CC Ant Rx / VC1 1 Rx 4.7 k 2, 5 VD VC1 CG GND EHT09084 Figure 2 Switching Path VC1 Ant-Rx 0V VC2 VD Tx-Ant VD 0V Layout of Application Board VC2 Tx VC2 Tx VD VD CC CG ANT CG VC1 ANT 4.7 k CC Rx EHT09086 CC Actual size 20 mm x 20 mm VC1 Rx EHT09085 Figure 3 Layout of Application Board PCB-data: Glass fiber teflon board (double sided) TACONIC TLX-9-0150-CH/CH, r = 2.45, thickness = 0.4 mm Data Book 134 V1.0, 2001-01-01 GaAs Components Application Note No. 046 Electrical Characteristics for 900 MHz - 1800 MHz Applications TA = 25 C, RS = RL = 50 , PIN = 10 dBm, unless otherwise specified CC = 56 pF, CG = 82 pF, all data are typical values Parameter Symbol Insertion Loss Tx - Path VC1 = VD; VC2 = 0 V f = 900 MHz f = 1.8 GHz ILTx Insertion Loss Rx - Path VC1 = 0 V; VC2 = VD f = 900 MHz f = 1.8 GHz ILRx Input-/Output return Loss Tx - Path VC1 = VD; VC2 = 0 V f = 900 MHz f = 1.8 GHz RLTx Input-/Output return Loss Rx - Path VC1 = 0 V; VC2 = VD f = 900 MHz f = 1.8 GHz RLRx Tx-/Rx-Isolation1) VC1 = VD; VC2 = 0 V ISOTxRx dB 0.35 0.85 0.35 0.75 dB 0.55 0.90 0.50 0.80 dB 21.5 21.0 22.0 23.0 dB 13.5 15.0 f = 900 MHz f = 1.8 GHz Ant/Rx-Isolation1) VC1 = VD; VC2 = 0 V VD = 3 V VD = 5 V Unit 14.0 15.5 dB 27.0 18.5 27.5 19.0 ISOAntRx f = 900 MHz f = 1.8 GHz Tx-/Ant-Isolation1) VC1 = 0 V; VC2 = VD dB 24.0 17.0 24.5 17.5 ISOTxAnt f = 900 MHz f = 1.8 GHz dB 27.5 20.5 28.5 21.0 Output power at 1 dB gain compression (Tx- Path) VC1 = 3 V; VC2 = 0 V; f = 1800 MHz P-1dB 22.5 28.0 dBm Input power at 1 dB gain compression (Rx- Path) VC1 = 0 V; VC2 = 3 V; f = 1800 MHz P-1dBin 24.8 30.1 dBm 1) see Page 137 for definition Data Book 135 V1.0, 2001-01-01 GaAs Components Application Note No. 046 Electrical Characteristics for 2.5 GHz - 3.5 GHz Applications TA = 25 C, RS = RL = 50 , PIN = 10 dBm, unless otherwise specified CC = 3.9 pF, CG = 5.6 pF, all data are typical values Parameter Symbol Insertion Loss Tx - Path VC1 = VD; VC2 = 0 V f = 2.5 GHz f = 3.5 GHz ILTx Insertion Loss Rx - Path VC1 = 0 V; VC2 = VD f = 2.5 GHz f = 3.5 GHz ILRx Input-/Output return Loss Tx - Path VC1 = VD; VC2 = 0 V f = 2.5 GHz f = 3.5 GHz RLTx Input-/Output return Loss Rx - Path VC1 = 0 V; VC2 = VD f = 2.5 GHz f = 3.5 GHz RLRx Tx-/Rx-Isolation1) VC1 = VD; VC2 = 0 V ISOTxRx dB 1.2 1.7 1.0 1.6 dB 1.3 2.1 1.2 1.8 dB 15.5 17.0 16.0 18.5 dB 11.5 14.0 f = 2.5 GHz f = 3.5 GHz Ant/Rx-Isolation1) VC1 = VD; VC2 = 0 V VD = 3 V VD = 5 V Unit 12.0 15.0 dB 17.5 13.0 18.0 13.5 ISOAntRx f = 2.5 GHz f = 3.5 GHz Tx-/Ant-Isolation1) VC1 = 0 V; VC2 = VD dB 15.0 11.5 15.5 11.5 ISOTxAnt f = 2.5 GHz f = 3.5 GHz dB 18.5 14.5 19.5 15.0 Output power at 1 dB gain compression (Tx- Path) VC1 = 3 V; VC2 = 0 V; f = 2.5 GHz P-1dB 24.3 28.7 dBm Input power at 1 dB gain compression (Rx- Path) VC1 = 0 V; VC2 = 3 V; f = 2.5 GHz P-1dBin 26.8 31.3 dBm 1) see Page 137 for definition Data Book 136 V1.0, 2001-01-01 GaAs Components Application Note No. 046 Test Conditions for Isolation Measurements Switch Control / VC2 4 CSY240 Tx 3 PIN 6 Antenna Rx / VC1 1 POUT 50 2, 5 GND EHT09087 Figure 4 Tx / Rx Isolation Switch Control / VC2 50 4 CSY240 Tx 3 6 Antenna Rx / VC1 1 POUT 2, 5 GND Figure 5 PIN EHT09088 Ant / Rx Isolation Switch Control / VC2 4 CSY240 Tx 3 PIN 6 Antenna POUT Rx / VC1 1 50 Figure 6 Data Book 2, 5 GND EHT09089 Tx / Ant Isolation 137 V1.0, 2001-01-01 CGY 98 GSM/PCN Dual Band Power Amplifier 1 Schematic of the CGY 98 PA Application 1.1 Application Board V1.2 Application Note No. 053 Two independent amplifier chains are implemented on the dual band amplifier board V1.2. Each one uses a BFP 420 SIEGET transistor for first-stage amplification, and the CGY 98 GaAs MMIC for the final two stages. The amplifier chains can be powered-up and controlled independently via a DC connector mounted on the board. In addition a negative voltage generator is included on the board to provide the necessary negative voltage for the GaAs MESFETs. Antenna GSM PA Harmonic Filter GSM VCO ~ PCN PA PCN VCO Tx/Rx Switch Bandselect Switch ~ EHT09097 Figure 1 1.2 Dual Band PA Application Picture of the V1.2 Application Board Figure 2 Data Book 138 V1.0, 2001-01-01 Data Book VCC J2 11 22 33 44 55 11 22 33 44 55 VCC 1 C1 1 nF C22 2 2 139 Input X7 Final Stage PCN Signal 1 nF C26 2 1 10 nH 1 2 1 2 C7 1 2 10 nH 1 1 nF 2 C11 1 2 1 6 pF 0 R6 C24 1 2 Switch C0603 1 nF C30 2 L7 1 VDrain PCN 2.7 nH 1 L8 C12 1 nF 2 1 2 1 Gate Control PCN 1 nF 2 R 11 56 C 3 B V4 BFP420 1 2 4 E1 E2 2.2 k R 12 Prestage 2 C 3 B V3 BFP420 1 2 4 E1 E2 2.2 k R5 Switch C0603 1 nF L4 2 C29 2 56 R8 Gate Control GSM VDrain GSM 1 k 1 R4 2 1 k 1 R3 2 C5 1 10 nH L6 1 1 nF 2 2 10 nF C2 1 1 C3 2 2 GND1 3 VD1 1 RFIn/VG IC2 8 pF 1 2 1 nF 2 C18 2 GND1 3 VD1 1 RFIn/VG IC1 R 15 0 1 2 1 2 CGY 98 PA 2 PCN CGY 98 PA 1 (GSM) C8 1 1 C14 2 RF OUT/VD2 4 GND2 5 1 nF 1 4.7 F 2 C27 RF OUT/VD2 4 GND2 5 4.7 F 2 + X5 1 Input X6 Final Stage GSM Signal C X2 1 4 2 Input GSM Signal 1 nF 1 Prestage 1 2 1 1 2 2 BAS40-04 3 3 V2 + Input PCN Signal 10 H L1 1 20 k C 3 1 nF C X1 1 21 2 1 B V1 Signal BFR93AW 1 2 15 pF E 2 R2 6.8 k 1 R1 2 NVG VCC C6 1 nF C10 2 C16 2 1 2 EHT09098 1 nF C17 Output PCN Signal X4 C15 1 3 pF HQ 1 38 nH Aircoll L5 2 2.2 pF HQ 1 38 nH Aircoll L3 C9 5.6 pF HQ 1 1 nF 2 2 1 10 pF 0603 HQ 1 C25 2 Output GSM Signal X3 1.3 GND Gate Control GSM Gate Control PCN Enable NVG GND VDrain GSM VDrain PCN VNegative J1 GaAs Components Application Note No. 053 Circuit Diagram of the V1.2 Application Board Figure 3 V1.0, 2001-01-01 GaAs Components Application Note No. 053 1.4 PCB Layout and Component Placement X6 INFINEON HK2 Dual Band PA V1.2 B R8 C29 C5 X3 IC1 C9 C 25 L8 C12 R3 L4 R5 C7 R15 X2 V3 C4 C10 L3 C8 C6 C30 X4 L7 R11 C3 C15 IC2 R6 R4 C18 C16 C24 R12 C 11 C17 L6 X5 V4 C26 L5 C 27 C14 R1 C21 C2 C1 C22 X1 R2 X7 V1 L1 GND En VNeg PCN GSM VDr VDr VCC Gate GSM Gate PCN J1 GND J2 EHT09099 Figure 4 Data Book 140 V1.0, 2001-01-01 GaAs Components Application Note No. 053 Table 1 List of Components L1 L3, L5 10 H muRata 0805 LQG21N 33 nH Aircoil Horst David GmbH D-85375 Neufahrn Germany L4, L6, L7 C9 C15 C16 C25 IC1, IC2 V3, V4 V1 V2 C7, C11 other Cs all Rs 10 nH Toko 0402 LL1005 5.6 pF AVX 0402 ACCU P 2.2 pF AVX 0402 ACCU P 3.0 pF AVX 0402 ACCU P 10 pF AVX 0603 ACCU P CGY 98 Infineon Technologies BFP 420 Infineon Technologies BFR 93 Infineon Technologies BAS 40-04W Infineon Technologies 1 nF 0603 - 0402 - 0402 Data Book 141 V1.0, 2001-01-01 GaAs Components Application Note No. 053 1.5 Application Key Data Parameter Symbol Limit Values Unit Test Condition min. typ. max. VD VCtrl 2.7 3.5 5.0 V - - 4.0 - - 1.0 V - Frequency Range f 880 902 915 MHz - Input Impedance ZI ZO PIN POUT xfO - 50 - - - 50 - - 2 5 8 dBm - 34.5 35.0 35.2 dBm - - - 35 dBc - - VD = 3.5 V; Tj = 25 C POUT = 35 dBm POUT = 35 dBm - 75 - 81 dBm dBm RBW = 100 kHz Supply Voltage Control Voltage Range GSM 900 Amplifier Output Impedance Input Power Output Power Harmonics Rx noise Power 925 - 935 MHz 935 - 960 MHz Efficiency PAE 52 55 58 % POUT = 35 dBm GSM 1800 Amplifier Frequency Range f 1710 1750 1785 MHz - Input Impedance ZI ZO PIN POUT xfO - 50 - - - 50 - - 2 5 8 dBm - 32.5 33.0 33.5 dBm - - - 35 dBc - - - 75 dBm VD = 3.5 V; Tj = 25 C POUT = 32.5 dBm POUT = 32.5 dBm Output Impedance Input Power Output Power Harmonics Rx noise Power 1805 - 1880 MHz Efficiency Data Book RBW = 100 kHz PAE 44 46 142 50 % Pout = 32.5 dBm V1.0, 2001-01-01 GaAs Components Application Note No. 053 1.6 Application Board V1.3 and Future Developments On the V1.3 Application Board the Band Select Logic and Drain Switches have been included. The power control circuit in Figure 5 with power control loop will be included in future projects. VBattery Power_ON Bandselect Antenna Drainswitch BCP 72 BFP 420 CGY 98 Output 50 Matching GSM VCO ~ BSW, Rx/Tx Switch Negative Voltage Generator VBattery Power_ON Bandselect Drainswitch BCP 72 BFP 420 PCN VCO Power Detector Power Control Circuit CGY 98 Output 50 Matching ~ Power Ramp Detected Output Power EHT09100 Figure 5 Data Book Dual Band PA Application with Power Control Loop 143 V1.0, 2001-01-01 Figure 6 Data Book 144 X4 X5 Input Final Stage PCN Signal Input PCN Signal Input X3 Final Stage GSM Signal B 1 2.2 k 1 nF C7 B 1 2.2 k R5 Prestage PCN 1 nF C5 R3 Prestage GSM Gate Control GSM Bandselect Gate Control PCN PA_ON VCC VNegative Battery X2 Input GSM Signal 1 2 3 4 5 1 2 3 4 5 X1 C 3 V4 BFP420 E1 E2 2 4 10 nH L3 56 R6 C 3 V3 BFP420 2 4 E1 E2 10 nH L2 56 R4 Clock Signal R1 1 nF C8 Switch 6 pF R 8 8 pF 1 k 1 nF C15 C19 Gate Control PCN C16 2.7 nH L4 1 nF C9 C6 1 nF R 7 1 nF 1 k 1 nF Switch Gate Control GSM 2 GND1 3 VD1 1 RFIn/VG IC2 10 nH 1 nF C17 2 GND1 3 VD1 1 RFIn/VG L8 1 2 1 1 BAS40-04 3 V2 IC1 R 17 0 C 3 1 nF B V1 BFR93AW 1 E 2 C11 R2 6.8 k 20 k C3 1 nF C2 C10 15 pF C1 L1 10 H VCC 2 CGY 98 + GND2 5 1 nF C13 RF OUT/VD2 4 GND2 5 1 nF C18 3 pF HQ C24 38 nH Aircoll_22x4 L7 68 R 16 R 15 1 k 5.6 pF HQ C21 100 nF C20 E 3.1 B V8 BCP72 C 5.2 L6 R 10 68 R9 1 k 38 nH Aircoll_22x4 100 nF C14 E 3.1 B V5 BCP72 C 5.2 10 F C27 RF OUT/VD2 4 Battery PA 2 (GSM) 2 CGY 98 PA 1 (GSM) 10 nF C4 VNegative Battery Tp bat R2 2.2 pF HQ C25 R1 R2 R1 R1 TR1 R2 X7 Output Signal PCN C2 3 B1 2 E1 1 R2 R1 B 1 Tp PA_ON R 11 1 k C 3 V7 BCR155W E 2 C2 3 B1 2 E1 1 X6 Output GSM Signal TR2 1 nF R1 TR1 TR2 C26 R2 BCR??S 4 E2 5 B2 6 C1 V9 10 pF 0603 HQ C22 1 nF C29 BCR155S 4 E2 5 B2 6 C1 V6 Tp bs EHT09101 PA_ON Bandselect 1.7 J2 J1 Negative Voltage Generator NVG GaAs Components Application Note No. 053 Circuit Diagram of the V1.3 Application Board Circuit Diagram of the V1.3 Application Board The RF part of the circuit is identical as on the V1.2 Application Board. V1.0, 2001-01-01 GaAs Components Application Note No. 053 2 Operation of the Board 2.1 Switching On Procedure To operate the board one of the following start up sequences should be carried out * * * * Connect the RF connections to the appropriate SMA connectors Connect the two DC connectors Connect the GND pin Set the appropriate Control Voltage (Gate GSM or Gate PCN) to the desired negative voltage (Range: - 4 V ... - 1 V) * Pulse the Supply Voltage (VDR GSM or VDR PCN) with max 25% Duty Cycle. Second way of operation * * * * Connect the RF connections to the appropriate SMA connectors Connect the two DC connectors Connect the GND pin Pulse the appropriate Control Voltage (Gate GSM or Gate PCN) with max 25% Duty Cycle. The voltage should be pulsed between - 4 V for Power off and the desired value (Range: - 4 V... - 1 V) * Supply the Drain Voltage (VDR GSM or VDR PCN) Operation of the Negative Voltage Generator * Connect the 13 MHz System Clock to the SMA Connector * Turn VCC Supply Voltage on * Set the enable Pin (en) to high Data Book 145 V1.0, 2001-01-01 GaAs Components Application Note No. 053 3 Measurements The following measurements show the performance of V1.2 Application Boards (without Drain Switch). 3.1 GSM Band 3.1.1 Output Power vs. Control Voltage The measurements of the Output Power POUT, Power Added Efficiency PAE and the Drain Current ID over Gate Voltage can be seen in the following figure. Dual Band PA, Application Board V1.2 VD = 3.5 V, PIN = 5 dBm, f = 902 MHz, duty cycle = 12.5%, tBurst = 577 s, T = 35 C EHT09102 60 dBm, % POUT , PAE 50 40 1800 mA I 1600 D 1400 30 1200 POUT PAE ID 20 1000 10 800 0 600 -10 400 -20 200 -30 -5 -4 -3 -2 -1 V 0 0 VGate Data Book 146 V1.0, 2001-01-01 GaAs Components Application Note No. 053 3.1.2 Control Voltage vs. Frequency In the following figure the output power is fixed to 34.5 dBm. The control voltage is measured over the GSM bandwidth. Dual Band PA, Application Board V1.2 VD = 3.5 V, PIN = 5 dBm, POUT = 34.5 dBm, duty cycle = 12.5%, fBurst = 217 Hz, tBurst = 577 s, T = 35 C VGate 0 V -0.2 EHT09103 PAE 60 % 54 PAE -0.4 48 -0.6 42 -0.8 36 -1.0 30 -1.2 24 -1.4 VGate 18 -1.6 12 -1.8 6 -2.0 0 880 885 890 895 900 905 MHz 915 f 3.1.3 Output Power @ VD = 2.8 V Operation under extreme conditions: VD = 2.8 V, PIN = 2 dBm (except: TAmbient = + 35 C) VG POUT ID 880 - 1.1 32.7 1420 902 - 1.1 32.7 1420 915 - 1.2 32.6 1380 f [MHz] Data Book [V] [dBm] 147 [mA] V1.0, 2001-01-01 GaAs Components Application Note No. 053 3.1.4 Output Power vs. Input Power Dual Band PA, Application Board V1.2 VDrain = 3.5 V, VGate = - 1.2 V, PIN = 5 dBm POUT = 34.75 dBm, f = 902 MHz, duty cycle = 12.5%, fBurst = 217 Hz, tBurst = 577 s, T = 25 C EHT09104 60 dBm, % POUT , PAE 50 45 2400 mA 2000 ID 1800 40 1600 35 1400 30 1200 25 20 ID POUT 1000 PAE 800 15 600 10 400 5 200 0 0 -60 -50 -40 -30 -20 -10 dBm 10 PIN Data Book 148 V1.0, 2001-01-01 GaAs Components Application Note No. 053 3.1.5 Harmonics POUT = 34.75 dBm, VD = 3.5 V, duty cycle = 12.5%, tBurst = 577 s Delta 1 [T1] Ref Lvl -35.31 dB 36.6 dBm 923.64729459 MHz 40 36.6 dB Offset 1 30 RBW VBW SWT 3 MHz RF At1 10 dB 10 MHz 5 ms Unit dBm A SGL GAT 20 10 1 0 1AP -10 -20 -30 -40 -50 -60 -70 Center 3.5 GHz Date: Figure 7 Data Book 22.JUL.98 700 MHz/ 9:48:26 SPAN 7 GHz EHT09105 Harmonics better 35 dBc 149 V1.0, 2001-01-01 GaAs Components Application Note No. 053 3.1.6 Measurements over Temperature 3.1.6.1 Output Power vs. Control Voltage GSM: POUT = f(VGate) over Temperature VDrain = 3.5 V, PIN = 5 dBm, duty cycle = 12.5%, tBurst = 577 s EHT09106 40 dBm POUT 30 25 +85 C +65 C +25 C -25 C 20 15 10 5 0 -5 -10 -15 -20 -25 -4.5 -4 -3.5 -3 -2.5 -2 -1.5 V -0.5 VGate Data Book 150 V1.0, 2001-01-01 GaAs Components Application Note No. 053 3.1.6.2 PAE vs. Control Voltage GSM: PAE = f(VGate) over Temperature VDrain = 3.5 V, PIN = 5 dBm, duty cycle = 12.5%, tBurst = 577 s EHT09107 60 % PAE 50 45 40 35 30 +85 C +65 C +25 C -25 C 25 20 15 10 5 0 -4.5 -4 -3.5 -3 -2.5 -2 -1.5 V -0.5 VGate Data Book 151 V1.0, 2001-01-01 GaAs Components Application Note No. 053 ID vs. Control Voltage GSM: ID = f(VGate) over Temperature VDrain = 3.5 V, PIN = 5 dBm, duty cycle = 12.5%, tBurst = 577 s 3.1.6.3 EHT09108 2000 mA ID 1800 1600 1400 1200 +85 C +65 C +25 C -25 C 1000 800 600 400 200 0 -4.5 -4 -3.5 -3 -2.5 -2 -1.5 V -0.5 VGate Data Book 152 V1.0, 2001-01-01 GaAs Components Application Note No. 053 3.1.6.4 Output Power vs. Input Power GSM: POUT = f(PIN) over Temperature VDrain = 3.5 V, PIN = 5 dBm, duty cycle = 12.5%, tBurst = 577 s 40 dBm EHT09109 POUT 30 25 20 15 10 5 0 -5 -10 -25 C, VG = -1.417 V +25 C, VG = -1.369 V +65 C, VG = -1.725 V +85 C, VG = -1.695 V -15 -20 -25 -30 -60 -50 -40 -30 -20 -10 0 dBm 20 PIN Data Book 153 V1.0, 2001-01-01 GaAs Components Application Note No. 053 3.1.7 Transducer Gain CGY 98 With bypassed prestage the following measurement shows the performance of the CGY 98 over frequency with GSM matching. VD = 3.5 V, PIN = 15 dBm, VGate = - 1.6 V CH3 S21 50 dB DB MAG 10 dB/ REF 0 dB 1: 19.54 dB 880 MHz 3: 19.75 dB 916 MHz 13 CAL OFS PCO 0 dB a1 10 dB/ TRG EXT FIL 10 k -50 dB 200 MHz/ Date: CENTER 1.3 GHz 4.AUG.98 13:51:46 SPAN 2.4 GHz EHT09110 Figure 8 Data Book 154 V1.0, 2001-01-01 GaAs Components Application Note No. 053 3.1.8 Output Matching Circuit Impedance The following measurement shows the impedance of the output matching circuit. The reference plane is directly located at the CGY 98 RF output pad. 1: 2.093 CH3 S11 1 0.5 2 2 3 -j36.35 m 899.5 MHz 2: 891.5 m -j14.76 1.74775 GHz 3: 1.671 -j13.36 2.70325 GHz 5 0.2 OFS 1 0 CAL 0.2 0.5 1 2 5 -0.2 -5 FIL 10 k -2 -0.5 TRG EXT -1 START Date: 100 MHz 23.JUL.98 STOP 4 GHz 11:23:57 EHT09111 Figure 9 Simulation results: Marker 1: 900 MHz, Marker 2: 1800 MHz, Marker 3: 2700 MHz Data Book 155 V1.0, 2001-01-01 GaAs Components Application Note No. 053 08/05/98 Compact Software Inc.-Microwave Harmonica 7.0 C:\Daten\modul\cgy98gsm\fr4gsm1\fr4gsm1.ckt 120 130 140 110 100 90 80 70 1 11:19:10 60 50 2 0.5 40 30 150 160 0.2 20 5 10 170 180 0.2 0 0.5 1 2 0 5 1 -170 -10 -0.2 -160 -5 -20 -30 -150 -40 -2 -140 -0.5 -50 -130 -1 -60 -120 -70 -110 -100 -90 -80 1.0 0.0 1.0 EHT09112 Figure 10 Data Book 156 V1.0, 2001-01-01 GaAs Components Application Note No. 053 3.2 PCN Band 3.2.1 Output Power vs. Control Voltage The measurements of the Output Power POUT, Power Added Efficiency PAE and the Drain Current ID over Gate Voltage can be seen in the following figure. Dual Band PA, Application Board V1.2 VD = 3.5 V, PIN = 5 dBm, f = 1750 MHz, duty cycle = 12.5%, tBurst = 577 s, T = 25 C EHT09113 50 dBm, % POUT , PAE 40 30 1600 mA ID 1400 1200 POUT 20 1000 PAE ID 10 800 0 600 -10 400 -20 200 -30 -5 -4 -3 -2 -1 V 0 0 VGate Data Book 157 V1.0, 2001-01-01 GaAs Components Application Note No. 053 3.2.2 Control Voltage vs. Frequency Dual Band PA, Application Board V1.2 VD = 3.5 V, PIN = 5 dBm, POUT = 32.5 dBm, duty cycle = 12.5%, fBurst = 217 Hz, tBurst = 577 s, T = 25 C VGate EHT09114 0 V -0.2 PAE 50 % 45 PAE -0.4 40 -0.6 35 -0.8 30 -1.0 25 VGate -1.2 20 -1.4 15 -1.6 10 -1.8 5 -2.0 1710 3.2.3 1730 1750 0 MHz 1785 f Output Power @ VD = 2.8 V Operation under extreme conditions: VD = 2.8 V, PIN = 2 dBm (except: TAmbient = + 35 C) VG POUT ID 1710 - 0.98 32.0 1460 1750 - 1.00 32.0 1380 1785 - 1.00 31.6 1340 f [MHz] Data Book [V] [dBm] 158 [mA] V1.0, 2001-01-01 GaAs Components Application Note No. 053 3.2.4 Output Power vs. Input Power Dual Band PA, Application Board V1.2 VDrain = 3.5 V, VGate = - 1.66 V, PIN = 5 dBm POUT = 32.5 dBm, f = 1750 MHz, duty cycle = 12.5%, fBurst = 217 Hz, tBurst = 577 s, T = 25 C EHT09115 50 dBm, % POUT , PAE 40 30 20 10 1500 mA ID 1300 1100 900 POUT PAE 700 ID 0 500 -10 300 -20 100 -30 -100 -60 -50 -40 -30 -20 -10 dBm 10 PIN Data Book 159 V1.0, 2001-01-01 GaAs Components Application Note No. 053 3.2.5 Harmonics POUT = 32.5 dBm, VD = 3.5 V, duty cycle = 12.5%, tBurst = 577 s Delta 1 [T1] Ref Lvl -43.51 dB 36.8 dBm 1.74299198 GHz 40 36.8 dB Offset 1 30 RBW VBW SWT 10 MHz RF At1 10 dB 10 MHz 5 ms Unit dBm A 20 GAT 10 1AP 0 -10 1 -20 -30 -40 -50 -60 Center 3.5 GHz Date: Figure 11 Data Book 22.JUL.98 700 MHz/ 11:10:12 SPAN 7 GHz EHT09116 Harmonics better 43 dBc 160 V1.0, 2001-01-01 GaAs Components Application Note No. 053 3.2.6 Measurements over Temperature 3.2.6.1 Output Power vs. Control Voltage PCN: POUT = f(VGate) over Temperature VDrain = 3.5 V, PIN = 5 dBm, duty cycle = 12.5%, tBurst = 577 s EHT09117 40 dBm POUT 30 25 20 15 10 5 0 +85 C +65 C +25 C -25 C -5 -10 -15 -20 -25 -30 -4.5 -4 -3.5 -3 -2.5 -2 -1.5 V -0.5 VGate Data Book 161 V1.0, 2001-01-01 GaAs Components Application Note No. 053 3.2.6.2 PAE vs. Control Voltage PCN: PAE = f(VGate) over Temperature VDrain = 3.5 V, PIN = 5 dBm, duty cycle = 12.5%, tBurst = 577 s EHT09118 60 % PAE 50 45 40 35 30 25 20 +85 C +65 C +25 C -25 C 15 10 5 0 -4.5 -4 -3.5 -3 -2.5 -2 -1.5 V -0.5 VGate Data Book 162 V1.0, 2001-01-01 GaAs Components Application Note No. 053 ID vs. Control Voltage PCN: ID = f(VGate) over Temperature VDrain = 3.5 V, PIN = 5 dBm, duty cycle = 12.5%, tBurst = 577 s 3.2.6.3 EHT09119 2000 mA ID 1800 1600 1400 1200 1000 800 600 +85 C +65 C +25 C -25 C 400 200 0 -4.5 -4 -3.5 -3 -2.5 -2 -1.5 V -0.5 VGate Data Book 163 V1.0, 2001-01-01 GaAs Components Application Note No. 053 3.2.6.4 Output Power vs. Input Power PCN: POUT = f(PIN) over Temperature VDrain = 3.5 V, PIN = 5 dBm, duty cycle = 12.5%, tBurst = 577 s 40 dBm EHT09120 POUT 25 15 5 -5 -15 -25 -35 -25 C, VG = -1.671 V +25 C, VG = -1.734 V +85 C, VG = -1.8 V +65 C, VG = -1.8 V -45 -60 -50 -40 -30 -20 -10 0 dBm 20 PIN Data Book 164 V1.0, 2001-01-01 GaAs Components Application Note No. 053 3.2.7 Transducer Gain CGY 98 With bypassed prestage the following measurement shows the performance of the CGY 98 over frequency with PCN matching. VD = 3.5 V, PIN = 15 dBm, VGate = - 1.1 V CH3 S21 50 dB DB MAG 10 dB/ REF 0 dB 2: 18.30 dB 1.7926 GHz 1: 18.90 dB 1.699 GHz 12 CAL OFS PCO 0 dB a1 10 dB/ TRG EXT FIL 10 k -50 dB START 100 MHz Date: 500 MHz/ 13.AUG.98 13:45:23 STOP 4 GHz EHT09121 Figure 12 Data Book 165 V1.0, 2001-01-01 GaAs Components Application Note No. 053 3.2.8 Output Matching Circuit Impedance The following measurement shows the impedance of the output matching circuit. The reference plane is directly located at the CGY 98 RF output pad. CH3 S11 1 0.5 2 5 0.2 0 2: 11.96 -j12.95 1.9096 GHz 1: 14.76 -j14.21 1.7068 GHz 0.2 0.5 1 2 CAL OFS PC a1 5 2 1 -0.2 -5 FIL 10 k -2 -0.5 TRG EXT -1 CENTER 2.05 GHz Date: 6.AUG.98 SPAN 3.9 GHz 14:57:03 EHT09122 Figure 13 In the following simulation of the output matching, Marker 1 is at 1.75 GHz and Marker 2 is at 3.5 GHz. Data Book 166 V1.0, 2001-01-01 GaAs Components Application Note No. 053 08/05/98 Compact Software Inc.-Microwave Harmonica 7.0 C:\Daten\modul\cgy98gsm\fr4pcn1\fr4pcn1.ckt 120 130 140 110 100 90 80 70 1 10:47:53 60 50 2 0.5 40 30 150 160 0.2 20 5 10 170 180 0.2 0 0.5 1 2 0 5 1 -170 -10 -0.2 -160 -5 -20 -30 -150 -40 -2 -140 -0.5 -50 -130 -1 -60 -120 -70 -110 -100 -90 -80 1.0 0.0 1.0 EHT09123 Figure 14 Data Book 167 V1.0, 2001-01-01 GaAs Components Application Note No. 053 3.3 Spurious due to NVG Test conditions: The PCN amplifier is working with an output power of 32.5 dBm at 1750 MHz. The NVG is pulsed by the system clock at 13 MHz. The output of the NVG is - 4 V at INEG = 2 mA. The spurious due to the NVG are better 80 dBc. RBW 100 kHz RF At1 10 dB Marker 2 [T1] Ref Lvl 31.94 dBm VBW 3 kHz dBm 36.8 dBm 1.75003006 GHz SWT 250 ms Unit 40 36.8 dB Offset A 30 20 GAT 10 0 1AP -10 -20 -30 -40 -50 -60 -70 -80 Center 1.75 GHz Date: 22.JUL.98 3 MHz/ 15:34:36 SPAN 30 MHz EHT09124 Figure 15 Data Book 168 V1.0, 2001-01-01 Data Sheets: GaAs RF-Transistors, MMICs and Modules GaAs Support IC BGV 503/BGV 903 Preliminary Data Sheet Negative Voltage Generator for biasing GaAs FET and Power Amplifier Support chips - BGV 503, BGV 903 - for cellular phones * BGV 503: one-stage charge-pump with additional regulator for biasing GaAs-FET's * BGV 903: two-stage charge-pump without regulator * Operating Voltage Range: + 2.2 V ... 5.0 V * Typical Output Voltage: - 2.5 V (BGV 503) (VCC = 3.0 V; IOUT = 3 mA) - 5.1 V (BGV 903) * Output Current: 3 mA * p-p Output Voltage Ripple: 25 mV ... 40 mV@ COUT = 1 F; IOUT = 3 mA * Integrated Oscillator fOSZ: 230 kHz * Standby Supply Current: < 5 A * Logic-Level Shutdown Mode * Bare Chip Dimensions: 1.2 x 2.0 mm2 P-TSSOP-10-1 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (taped) Package BGV 503 BGV 503 Q62702-L0132 P-TSSOP-10-1 BGV 903 BGV 903 Q62702-L0131 P-TSSOP-10-1 Data Book 170 V1.0, 2001-01-01 GaAs Components BGV 503/BGV 903 BGV 503 (one-stage charge-pump with regulator) Characteristics Limit Values Unit Test Conditions min. typ. max. Input Voltage Range 2.7 - 5.0 V - Ground (VSS) - 0 - V - Output Voltage - - 2.1 - 1.4 V VCC = 2.7 V; IOUT = 3 mA - - 2.5 - 1.7 V VCC = 3.0 V; IOUT = 3 mA - - 4.6 - 3.9 V VCC = 5.0 V; IOUT = 3 mA Power Efficiency - 76 - % VCC = 3.0 V; Rload = 1 k Output Voltage Ripple1) - 20 - mV VCC = 3.0 V; IOUT = 0 mA - 100 - mV VCC = 3.0 V; IOUT = 3 mA No-Load Supply Current - 0.4 2.0 mA VCC = 3.0 V Voltage Conversion Efficiency - 99.6 - % IOUT = 0 mA Shutdown/Enable Input Bias - Current - 1 A - Shutdown Input Supply Current - - 5 A - Turn On Time - 51 - s - Temperature Range - 25 - 100 C - 1) COUT = 100 nF Data Book 171 V1.0, 2001-01-01 GaAs Components BGV 503/BGV 903 BGV 903 (two-stage charge-pump) Characteristics Limit Values Unit Test Conditions min. typ. max. Input Voltage Range 2.7 - 5.0 V - Ground (VSS) - 0 - V - Output Voltage - - 4.4 - 3.3 V VCC = 2.7 V; IOUT = 3 mA - - 5.1 - 4.0 V VCC = 3.0 V; IOUT = 3 mA - - 9.2 - 8.2 V VCC = 5.0 V; IOUT = 3 mA Power Efficiency - 72 - % VCC = 3.0 V; RLoad = 1 k Output Voltage Ripple1) - 30 - mV VCC = 3.0 V; IOUT = 0 mA - 100 - mV VCC = 3.0 V; IOUT = 3 mA No-Load Supply Current - 0.9 2.0 mA VCC = 3.0 V Voltage Conversion Efficiency - 98.2 - % IOUT = 0 mA Shutdown/Enable Input Bias - Current - 1 A - Shutdown Input Supply Current - - 5 A - Turn On Time - 77 - s - Temperature Range - 25 - 100 C - 1) COUT = 100 nF Data Book 172 V1.0, 2001-01-01 GaAs Components BGV 503/BGV 903 Bare Chip Characteristics Limit Values Unit Test Conditions min. typ. max. Input Voltage Range 2.7 - 5.0 V - Ground (VSS) - 0 - V - Output Voltage1) - - 4.4 - 3.3 V VCC = 2.7 V; IOUT = 3 mA - - 5.0 - 4.0 V VCC = 3.0 V; IOUT = 3 mA - - 9.2 - 8.2 V VCC = 5.0 V; IOUT = 3 mA Power Efficiency1) - 73 - % VCC = 3.0 V; RLoad = 1 k Output Voltage Ripple2) - 30 - mV VCC = 3.0 V; IOUT = 0 mA - 100 - mV VCC = 3.0 V; IOUT = 3 mA No-Load Supply Current1) - 1.0 2.0 mA VCC = 3.0 V Output Voltage3) - - 3.6 - V VCC = 2.7 V; IOUT = 3 mA - - 4.3 - V VCC = 3.0 V; IOUT = 3 mA - - 8.5 - V VCC = 5.0 V; IOUT = 3 mA Power Efficiency3) - 63 - % VCC = 3.0 V; IOUT = 3 mA Output Voltage Ripple3) - 10 - mV VCC = 3 V; IOUT = 3 mA Shutdown/Enable Input Bias - Current - 1 A - Shutdown Input Supply Current - - 5 A - Turn On Time1) - 77 - s - Temperature Range - 25 - 100 C - 1) 2) 3) without lowpass-filter COUT = 100 nF with lowpass-filter COUT = 100 nF; CFilt = 100 nF Note: Typical values are measured at TA = 25 C Max- and Min-values are over the whole temperature-range of - 25 C < TA < 100 C Data Book 173 V1.0, 2001-01-01 GaAs Components BGV 503/BGV 903 Functional Block Diagram The applied supply voltage (VCC) is inverted (BGV 503) and additionally doubled (BGV 903) to a negative output voltage (nv). Regarding the Bare-Chip you have two alternatives: Either you prefer an output voltage that is only inverted (capacitor between c1d and c2p) or one that is inverted and doubled (capacitors between c1d-c1p and c2d-c2p). The switching frequency (clk) of the charge-pump is determined by the integrated oscillator and is between 100 kHz and 400 kHz. It is possible to stop the operating of the IC by connecting disq to a voltage lower than 1 V (shutdown mode). The driver (drive) ensures that the MOS-switches of the charge-pump are operated at the correct time. To reduce the ripple in the output voltage the low pass filter can be used in the Bare-ChipSolution connecting an external filter-capacitor between pin cfilt and VSS. This filtered voltage can be taken out at pin fnv. The regulator can be used to control the biasing of GaAs-FET current-mirrors (see Figure 5). VCC C1P C1D C2P C2D NVG VDISQ Oscillator CLK Drive G1 G1D G2ON G2OFF Charge Pump NV Low Pass Filter VCON f NV Regulator VNEG CFILT V REF R REF Figure 1 Data Book VSS EHT08500 Block Diagram of the Negative Voltage Generator 174 V1.0, 2001-01-01 GaAs Components BGV 503/BGV 903 Pin Configuration of Packaged Devices BGV 503/BGV 903 Package: P-TSSOP-10-1 R REF 1 10 C2P VREF 2 9 C1D NV 3 8 VNEG VSS 4 7 VCON VCC 5 6 VDISQ BGV 503 EHT08501 Figure 2 BGV 503 One-stage Charge Pump with Regulator R REF 1 10 C2D VREF 2 9 C2P NV 3 8 C1D VSS 4 7 C1P VCC 5 6 VDISQ BGV 903 EHT08502 Figure 3 Data Book BGV 903 Two-stage Charge Pump without Regulator 175 V1.0, 2001-01-01 GaAs Components BGV 503/BGV 903 Pin Configuration Pin No. BGV 503 BGV 903 1 RREF RREF (n.c.) Reference resistor of the regulator 2 VREF VREF (n.c.) Reference voltage of the regulator 3 NV NV Negative output-voltage 4 VSS VSS Ground connection 5 VCC VCC Positive supply voltage 6 VDISQ VDISQ Enable (TTL compatible) 7 VCON - C1P Control-voltage of the regulator Pump-capacitor 1 - - C1D Negative supply-voltage of the regulator Pump-capacitor 1 9 C1D - - C2P Pump-capacitor 1 Pump-capacitor 2 10 C2P - - C2D Pump-capacitor 1 Pump-capacitor 2 - 8 Data Book VNEG Configuration 176 V1.0, 2001-01-01 GaAs Components BGV 503/BGV 903 FNV 1 14 C2D FNV R REF 2 13 C2P R REF VREF 3 12 C1D VREF 5 10 VNEG C FILT 6 9 VCON C FILT VCC 7 8 VDISQ VCC VSS C2D NV C2D 4 C1D VNEG VSS 2 Bare-Chip C2P 11 NV C2D VCON VDISQ 1.2 EHT08503 Figure 4 Pad Definition and Top View of the Bare-Chip with Lateral Dimensions Pin Configuration Bare-Chip Pin No. Bare-chip Configuration 1 FNV Filtered negative output voltage 2 RREF Reference resistor of the regulator 3 VREF Reference voltage of the regulator 4 NV Negative output-voltage 5 VSS Ground connection 6 CFILT Filter-capacitor 7 VCC Positive supply voltage 8 VDISQ Disable, active low (enable) 9 VCON Control-voltage of the regulator 10 VNEG Negative supply-voltage of the regulator 11 C1P Pump-capacitor 1 12 C1D Pump-capacitor 1 13 C2P Pump-capacitor 2 14 C2D Pump-capacitor 2 Data Book 177 V1.0, 2001-01-01 GaAs Components BGV 503/BGV 903 Typical Applications For all applications use capacitors with low effective series resistance (ESR) to maintain a low dropout voltage and a low p-p voltage ripple. An additional capacitor in the supply line (between VCC and VSS) is useful to reduce both the AC input impedance and, as a consequence, the spikes in the supply voltage, resulting from the current peaks when the IC is switching. The value of this capacitance depends on the circuit configuration; 1 F is regarded as sufficient. BGV 503 R1 +3 V 1 1 k 2 3 OUT 4 5 C1 100 nF GND R REF C2P VREF NV C1D BGV 503 VNEG 10 9 100 nF 8 VSS VCON 7 VCC 6 VDISQ C2 VCON R2 3 k Enable GaAs-FET C3 GND +5 V R3 18 k 33 nF GND EHT08505 Figure 5 BGV 503; One-Stage-Inverting Charge-Pump with GaAs-FET Regulator BGV 903 N.C. N.C. 1 2 3 OUT C1 R REF C2D VREF NV 4 VSS 5 VCC C2P BGV 903 C1D C1P 10 9 8 7 VDISQ 6 C3 100 nF C2 100 nF Enable 100 nF EHT08506 GND Figure 6 Data Book GND +5 V BGV 903; Two-Stage-Inverting Charge-Pump 178 V1.0, 2001-01-01 GaAs Components BGV 503/BGV 903 OUT N.C. N.C. 1 R REF C2P 3 VREF C1D 5 6 7 C4 100 nF 100 nF C2D 2 4 C1 f NV NV Bare Chip C1P 14 13 12 11 VNEG 10 VSS CFILT VCC VCON 9 VDISQ 8 C3 100 nF C2 100 nF N.C. N.C. Enable EHT08507 GND Figure 7 GND GND +5 V Bare-Chip-Solution; Two-Stage Inverting Charge-Pump with Integrated Lowpass-Filter Typical Operating Characteristics (external configuration see Figure 5, Figure 6, Figure 7). Operating conditions: VCC = 3 V, VDISQ = 2 V, TA = 25 C, C1 = C2 = C3 = C4 = 100 nF, unless otherwise noted. Data Book 179 V1.0, 2001-01-01 GaAs Components BGV 503/BGV 903 BGV 903: Supply Current vs. Temperature @ IOUT = 0 mA BGV 503: Supply Current vs. Temperature @ IOUT = 0 mA EHT08513 0.001 EHT08508 0.003 ISUP A ISUP A VCC = 5 V 0.002 0.0007 0.0006 VCC = 5 V 0.0015 0.0005 0.001 3V 0.0004 3V 2.7 V 0.0005 0.0003 2.7 V 0.0002 -40 -20 0 20 40 60 80 0 -40 -20 C 120 0 20 40 60 80 T T BGV 503: Oscillator Frequency vs. Temperature @ IOUT = 3 mA BGV 903: Oscillator Frequency vs. Temperature @ IOUT = 3 mA EHT08512 350 kHz f 330 310 VCC = 5 V 290 290 270 EHT08511 350 kHz f 330 VCC = 5 V 310 C 120 270 3V 250 250 230 230 3V 2.7 V 210 210 190 190 170 170 150 -40 -20 0 20 40 60 80 150 -40 -20 C 120 0 20 40 60 80 C 120 T T Data Book 2.7 V 180 V1.0, 2001-01-01 GaAs Components BGV 503/BGV 903 BGV 503: Output Voltage vs. Load Current EHT08510 -1.5 NV BGV 903: Output Voltage vs. Load Current V VCC = 2.7 V -2.0 EHT08509 -3 NV V VCC = 2.7 V -4 3V 3V -2.5 -5 -3.0 -6 4V 4V -3.5 -7 -8 -4.0 5V 5V -4.5 -5.0 0 0.001 0.002 0.003 0.004 -9 -10 A 0.006 0 0.001 0.002 0.003 0.004 BGV 503: Power Efficiency vs. Load Current PAE BGV 903: Power Efficiency vs. Load Current EHT08519 80 % PAE EHT08518 80 % 75 75 70 70 VCC = VCC = 2.7 V 3V 4V 5V 65 60 55 55 0 0.001 0.002 0.003 0.004 50 A 0.006 IOUT Data Book 2.7 V 3V 4V 5V 65 60 50 A 0.006 IOUT IOUT 0 0.001 0.002 0.003 0.004 A 0.006 IOUT 181 V1.0, 2001-01-01 GaAs Components BGV 503/BGV 903 BGV 503: Ripple vs. Output-Capacity @ IOUT = 3 mA BGV 903: Ripple vs. Output-Capacity @ IOUT = 3 mA EHT08516 250 EHT08517 300 mV VRipplemV VRipple 250 200 200 150 150 100 VCC = 5 V 100 VCC = 5 V 4V 50 50 4V 3V 0 1 10 10 2 10 3 3V 0 1 10 nF 10 4 10 2 10 3 COUT BGV 503/903: Output Voltage vs. Supply Voltage @ IOUT = 3 mA NV COUT Output Ripple vs. Input Voltage @ IOUT = 3 mA EHT08515 -1 V VRipple -3 EHT08514 180 mV BGV 503 140 -4 -5 BGV 903 120 -6 100 BGV 903 -7 BGV 503 80 -8 -9 60 -10 40 -11 20 -12 -13 nF 10 4 2 2.5 3 3.5 4 4.5 5 5.5 0 V 6.5 VCC Data Book Bare Chip with Filter 2 2.5 3 3.5 4 4.5 5 5.5 V 6.5 VCC 182 V1.0, 2001-01-01 GaAs Components BGV 503/BGV 903 EHT08520 C2 Pk-Pk 12.8 mV 2 Ch2 10.0 mV Figure 8 B W M 1.00 s BGV 503: Output Voltage, AC-coupled, VCC = 3 V, IOUT = 0 mA, COUT = 100 nF EHT08521 C2 Pk-Pk 88.0 mV 2 Ch2 20.0 mV Figure 9 Data Book B W M 1.00 s BGV 503: Output Voltage, AC-coupled, VCC = 3 V, IOUT = 3 mA, COUT = 100 nF 183 V1.0, 2001-01-01 GaAs Components BGV 503/BGV 903 EHT08522 C2 Pk-Pk 95.2 mV C2 Freq 236.12 kHz 2 Ch2 20.0 mV Figure 10 B W M 1.00 s BGV 903: Output Voltage, AC-coupled, VCC = 3 V, IOUT = 3 mA, COUT = 100 nF EHT08523 C2 Pk-Pk 20.8 mV 2 Ch2 10.0 mV Figure 11 Data Book B W M 1.00 s BGV 903: Output Voltage, AC-coupled, VCC = 3 V, IOUT = 0 mA, COUT = 100 nF 184 V1.0, 2001-01-01 GaAs Components BGV 503/BGV 903 EHT08524 C2 Min -5.16 V C2 Fall 92.7 s Ch1 2.00 V Figure 12 Ch2 1.00 V Ch4 2.00 V B M 50.0 s W BGV 903: Startup from Shutdown VCC = 3 V, RLoad = 1.7 k, COUT = 100 nF EHT08525 C2 Min -5.08 V C2 Fall 84.68 s Ch1 2.00 V Figure 13 Data Book Ch2 1.00 V Ch4 2.00 V B W M 20 s BGV 903: Startup from Shutdown VCC = 3 V, RLoad = 1.7 k, COUT = 100 nF 185 V1.0, 2001-01-01 GaAs Components BGV 503/BGV 903 EHT08526 C4 Mean -1.44 mV C4 Pk-Pk 8.4 mV C2 Mean -1.76 mV C2 Pk-Pk 89.2 mV Ch2 20.0 mV Ch4 20.0 mV Figure 14 B B W M 5.00 s W BGV 903: Output Voltage and Filtered Output Voltage, VCC = 3 V, IOUT = 3 mA, COUT = 100 nF Note: Bandwidth of oscilloscope is 20 MHz. Data Book 186 V1.0, 2001-01-01 GaAs Components BGV 503/BGV 903 Package Outlines 0.5 0.1 A A 0.22 0.05 0.08 M 6 max. 0.42 +0.15 -0.1 ABC 4.9 3 0.1 C +0.08 0.125 -0.05 3 0.1 H 0.09 0.1 max. 0.85 0.1 1.05 max. P-TSSOP-10-1 (Plastic Thin Shrink Small Outline Package) 0.25 A B C B GPS09184 Index Marking Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Book 187 Dimensions in mm V1.0, 2001-01-01 GaAs FET CF 739 Data Sheet * * N-channel dual-gate GaAs MESFET Depletion mode transistor for tuned small-signal applications up to 2 GHz, e.g. VHF, UHF, Sat-TV tuners * Low noise * High gain * Low input capacitance ESD: Electrostatic discharge sensitive device, observe handling precautions! Type CF 739 Marking Ordering Code MSs Q62702-F1215 SOT-143 Pin Configuration 1 2 3 4 S D G2 G1 Package P-SOT143-4-1 Maximum Ratings Parameter Symbol Value Unit Drain-source voltage VDS 10 V Gate1-source voltage - VG1S 6 V Gate2-source voltage - VG2S 6 V Drain current ID 80 mA Gate1-source peak current + IG1SM 1 mA Gate2-source peak current + IG2SM 1 mA Total power dissipat. (TS 66 C) Ptot 240 mW Channel temperature TCh 150 C Storage temperature Tstg - 55 ... + 150 C Parameter Symbol Value Unit Channel-soldering point1) RthChS 350 K/W Thermal Resistance 1) TS is measured on the collector lead at the soldering point to the pcb. Data Book 188 V1.0, 2001-01-01 GaAs Components CF 739 Electrical Characteristics TA = 25 C, unless otherwise specified Parameter Symbol Limit Values min. typ. max. Unit Test Conditions DC Characteristics Drain-Source Breakdown Voltage V(BR)DS 10 - - V ID = 100 A, - VG1S = - VG2S = 4 V Gate 1 leakage current - IG1SS - - 20 A - VG1S = 5 V; VG2S = VDS = 0 Gate 2 leakage current - IG2SS - - 20 A - VG2S = 5 V; VG1S = VDS = 0 Drain Current IDSS 6 - 60 mA VG1S = 0, VG2S = 0, VDS = 3 V Gate 1-source pinchoff voltage - VG1S(P) - - 2.5 V VG2S = 0, VDS = 5 V, ID = 200 A Gate 2-source pinchoff voltage - VG2S(P) - - 2.5 V VG1S = 0, VDS = 5 V, ID = 200 A Data Book 189 V1.0, 2001-01-01 GaAs Components CF 739 Electrical Characteristics (cont'd) TA = 25 C, unless otherwise specified Parameter Symbol Limit Values min. typ. max. Unit Test Conditions AC Characteristics Forward transconductance gFS - 25 - mS VDS = 5 V, VG2S = 2 V, ID = 10 mA, f = 1 kHz Gate 1 input capacitance CGFSS - 0.95 - pF VG2S = 2 V, VDS = 5 V, ID = 10 mA, f = 1 MHz Output capacitance CDSS - 0.5 - pF VG2S = 2 V, VDS = 5 V, ID = 10 mA, f = 1 MHz Noise figure f = 1.75 GHz f = 800 MHz F dB VG2S = 2 V, VDS = 5 V, ID = 10 mA Power gain f = 1.75 GHz f = 800 MHz GPS dB VG2S = 2 V, VDS = 5 V, ID = 10 mA Control range GPSC dB VG2S = 2V...-3V Data Book - - 1.8 1.1 - - - - 17 22 - - - 50 - 190 V1.0, 2001-01-01 GaAs Components CF 739 Common Source Emitter S-Parameters G2 RF-grounded, VDS = 5 V, VG2S = 2 V, ID = 10 mA, Z0 = 50 f S11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.06 0.999 - 2.4 3.21 176.9 0.001 81.8 0.963 -1 0.08 0.998 - 3.2 3.21 175.5 0.001 85.8 0.963 - 1.4 0.1 0.998 - 4.1 3.21 174.3 0.001 90.8 0.962 - 1.7 0.15 0.997 -6 3.22 171.4 0.002 84.2 0.962 - 2.5 0.2 0.993 -8 3.22 168.4 0.002 88.1 0.962 - 3.4 0.25 0.989 - 10.1 3.21 165.5 0.003 84.4 0.962 - 4.3 0.3 0.987 - 12.1 3.21 162.5 0.003 83.3 0.962 - 5.2 0.4 0.975 - 16 3.18 156.6 0.004 79.6 0.961 - 6.8 0.5 0.965 - 19.9 3.15 150.7 0.005 78.6 0.96 - 8.5 0.6 0.951 - 23.8 3.12 145 0.006 78 0.96 - 10.3 0.7 0.935 - 27.5 3.09 139.3 0.007 76.6 0.961 - 12 0.8 0.918 - 31.4 3.05 134 0.008 73.3 0.958 - 13.7 0.9 0.9 - 35.2 3.03 128.5 0.009 70.4 0.956 - 15.4 1 0.877 - 39 3.02 122.9 0.009 69.5 0.955 - 17 1.2 0.883 - 46.6 2.96 111.4 0.01 66.4 0.953 - 20.6 1.4 0.773 - 53.7 2.85 99.7 0.011 59.9 0.949 - 24.3 1.5 0.744 - 56.8 2.77 94.4 0.012 59.9 0.949 - 26.2 1.6 0.72 - 60.1 2.74 89.2 0.012 57.5 0.949 - 27.9 1.8 0.666 - 66.2 2.64 78.9 0.012 54.1 0.948 - 31.5 2 0.614 - 72.8 2.59 68.6 0.012 49.2 0.945 - 35.3 2.2 0.556 - 80.3 2.53 57.4 0.012 43.7 0.941 - 39.4 2.4 0.497 - 87.2 2.45 45.6 0.01 39.4 0.937 - 44.4 2.5 0.466 - 90.2 2.38 40 0.009 35.2 0.936 - 47 2.6 0.449 - 92.8 2.34 34.5 0.008 32.2 0.936 - 49.6 2.8 0.408 - 97.1 2.24 23.6 0.005 25.1 0.937 - 54.6 3 0.375 - 101.7 2.17 12.2 0.002 - 25 0.934 - 59.1 Data Book 191 V1.0, 2001-01-01 GaAs Components CF 739 Output Characteristics ID = f(VDS); VG2S = 2 V Total Power Dissipation Ptot = f(TA1), TS); CF 739 300 Ptot EHT07317 CF 739 50 mW D EHT07318 mA VG1S = 0 V 40 200 -0.25 V 30 TS TA 20 -0.50 V 100 10 -0.75 V -1.0 V 0 0 50 100 C 0 150 0 2 4 6 Gate 1 Forward Transconductance gFS1 = f(VG1S); VDS = 5 V, f = 1 kHz CF 739 g fs1 Gate 1 Forward Transconductance gFS1 = f(VG2S); VDS = 5 V, f = 1 kHz EHT07319 VG2S = 2.0 V mS 8 VDS TA; TS 50 V 50 1.0 V g fs1 40 CF 739 EHT07320 mS 40 VG1S = -0.25 V 30 0V 0.25 V 30 0.5 V 20 20 10 10 0V -1.0 V 0 -2 -1 -0.5 V 0 V 0 1 V G1S 1) -2 -1 0 1 V 2 V G2S Package mounted on pcb. Data Book 192 V1.0, 2001-01-01 GaAs Components CF 739 Drain Current ID = f(VG2S); VDS = 5 V Drain Current ID = f(VG1S); VDS = 5 V CF 739 80 EHT07321 VG2S = 2 V D mA CF 739 80 EHT07322 VG1S = 0.5 V D mA 1V 60 60 0V 40 40 0V 20 -0.5 V 20 -1.0 V -1 V 0 -2 -1 0 V 0 1 -2 -1 0 1 V VG1S V G2S Gate 1 Input Capacitance CG1SS = f(ID); VG2S = 2 V, VDS = 5 V, f = 0.1 ... 1 GHz CF 739 1.5 Output Capacitance CDSS = f(VDS); VG2S = 2 V, ID = 10 mA, f = 0.1 ... 1 GHz EHT07323 3 pF Cdss Cg1ss 2 0.5 1 0 10 20 mA 0 30 D Data Book CF 739 EHT07324 pF 1.0 0.0 2 0 2 4 6 8 V 10 V DS 193 V1.0, 2001-01-01 GaAs Components CF 739 Common Source Admittance Parameters (G2 RF grounded) Gate 1 Input Admittance y11S VDS = 5 V, VG2S = 2 V, ID = 10 mA CF 739 14 Gate 1 Forward Transfer Admit. y21S VDS = 5 V, VG2S = 2 V, ID = 10 mA EHT07325 0 CF 739 EHT07326 f = 100 MHz f = 2000 MHz mS b 11s 1800 MHz 12 200 MHz b 21s mS 400 MHz 1600 MHz 10 -10 600 MHz 1400 MHz 800 MHz 1200 MHz 8 1000 MHz -20 1000 MHz 1200 MHz 6 800 MHz 1400 MHz 600 MHz 4 -30 1600 MHz 400 MHz 2 1800 MHz 200 MHz 100 MHz 0 0 1 2 3 4 5 6 mS -40 8 g 11s 2000 MHz 0 10 20 30 mS 40 g 21s Output Admittance y22S VDS = 5 V, VG2S = 2 V, ID = 10 mA 7 CF 739 EHT07327 mS b 22s f = 2000 MHz 6 1800 MHz 5 1600 MHz 1400 MHz 4 1200 MHz 3 1000 MHz 800 MHz 2 600 MHz 400 MHz 1 200 MHz 0 100 MHz 0 0.1 0.2 0.3 0.4 mS 0.5 g 22s Data Book 194 V1.0, 2001-01-01 GaAs Components CF 739 + j 50 + j 100 + j 25 + j 250 + j 10 0 10 25 50 100 3 GHz - j 10 f 2 S 11 f 3 GHz - j 25 0.1 0.1 250 0.5 1 0.5 - j 250 1 2 S22 - j 100 - j 50 Figure 1 EHT07328 S11, S22 = f(f), Z-Plane VDS = 5 V, VG2S = 2 V, ID = 10 mA, Z0 = 50 90 45 135 f 1 2 S 21 0.5 f 0.1 180 4 S 21 2 1 0.1 2 S 12 3 GHz 0.02 3 GHz 0.04 S 12 -45 -135 -90 Figure 2 Data Book 0 EHT07329 S12, S21 = f(f) VDS = 5 V, VG2S = 2 V, ID = 10 mA, Z0 = 50 195 V1.0, 2001-01-01 GaAs Components CF 739 Package Outlines P-SOT143-4-1 (Small Outline Transistor) 1.1 max 2.9 0.1 1.9 0.1 max 0.3 0.1 +0.1 0.8 -0.05 +0.2 acc. to DIN 6784 3 1 2 10 max 1.3 0.1 4 2.6 max 10 max 0.7 0.2 A 0.55 -0.1 0.4 +0.1 -0.05 0.08...0.15 1.7 0.25 M 2... 30 B 0.20 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Book 196 M A GPS05559 B Dimensions in mm V1.0, 2001-01-01 GaAs MMIC CF 750 Data Sheet * * * * * * Biased Dual Gate GaAs FET For frequencies from 400 MHz to 3 GHz For mixer and amplifier applications, i.e LNA- and buffer stages in handheld equipment Low power consumption, 2 mA operating current typ. Operating voltage range: 3 to 6 V Ion-implanted planar structure SOT-143 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type CF 750 1) Marking Ordering Code (taped) 1 2 3 4 MX GND D G S Q62702-F1391 Pin Configuration Package1) P-SOT143-4-1 For detailed dimensions see Page 205. Maximum Ratings Parameter Symbol Value Unit Drain-source voltage VDS 8 V Gate-source voltage - VGS 5 V Drain current ID 80 mA Gate-source peak current + IGSM 2 mA Channel temperature TCh 150 C Storage temperature range Tstg - 55 ... + 150 C Total power dissipat. (TS < 48 C)1) Ptot 300 mW Parameter Symbol Value Unit Channel-soldering point (GND) RthChGND 340 K/W Data Book 197 1) TS: Temperature measured at soldering point Thermal Resistance V1.0, 2001-01-01 GaAs Components CF 750 20 k D G S 5 k 10 pF 500 EHT08527 Figure 1 Circuit Diagram Electrical Characteristics TA = 25 C, unless otherwise specified DC Characteristics Symbol Limit Values min. typ. max. Unit Test Conditions Drain-Source Breakdown Voltage VDS(BR) 8 - - V ID = 500 A, - VGS = 4 V Drain Current S-pin not connected IDSS,P 1.6 2 2.8 mA VGGND = 0 V, VDS = 3.8 V Drain Current S-pin connected to GND IDSS - 50 - mA VGS = 0 V, VDS = 3.8 V Transconductance S-pin connected to GND gm - 25 - mS ID = 10 mA, VDS = 3.8 V Data Book 198 V1.0, 2001-01-01 GaAs Components CF 750 Electrical Characteristics of CF 750 in Amplifier Application TA = 25 C, VDGND = 3.8 V, RS = RL = 50 , unless otherwise specified. Amplifier Application Symbol Power Gain Limit Values Unit Test Conditions min. typ. max. GPS - 11 - dB ID = 2 mA, f = 900 MHz Noise Figure NF - 1.6 - dB ID = 2 mA, f = 900 MHz 3rd Order Intermodulation IPIP3 - -1 - dBm ID = 2 mA, f = 900 MHz 3rd Order Intermodulation OPIP3 - 10 - dBm ID = 2 mA, f = 900 MHz Power Gain GPS - 10 - dB ID = 2 mA, f = 1.8 GHz Noise Figure F - 1.9 - dB ID = 2 mA, f = 1.8 GHz 3rd Order Intermodulation IPIP3 - -1 - dBm ID = 2 mA, f = 1.8 GHz 3rd Order Intermodulation OPIP3 - 9 - dBm ID = 2 mA, f = 1.8 GHz Data Book 199 V1.0, 2001-01-01 GaAs Components CF 750 Electrical Characteristics of CF 750 in Mixer Application TA = 25 C, VDGND = 3.8 V, RS = RL = 50 , unless otherwise specified. Mixer Application Symbol Limit Values min. typ. max. Unit Test Conditions Single Sideband Noise Figure FSSB - 4.5 - dB fRF = 945 MHz, fLO = 900 MHz fIF = 45 MHz, PLO = 3 dBm Conversion Gain GA - 15 - dB fRF = 945 MHz, fLO = 900 MHz fIF = 45 MHz, PLO = 3 dBm 3rd Order Intermodulation IPIP3 - -5 - dBm fRF = 945 MHz, fLO = 900 MHz fIF = 45 MHz, PLO = 3 dBm 3rd Order Intermodulation OPIP3 - 10 - dBm fRF = 945 MHz, fLO = 900 MHz fIF = 45 MHz, PLO = 3 dBm Data Book 200 V1.0, 2001-01-01 GaAs Components CF 750 Typical Common Source S-Parameters Bias conditions: VDGND = 3.8 V, ID = 2 mA Source-Pad RF-grounded by capacitor with low inductance (< 0.5 nH)! f S11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.01 0.97 -1 1.78 179 0.002 89 0.98 -1 0.1 0.97 -3 1.78 175 0.008 84 0.98 -2 0.25 0.96 -8 1.76 169 0.015 78 0.97 -6 0.5 0.94 - 16 1.73 155 0.027 75 0.95 - 11 0.75 0.91 - 26 1.70 141 0.039 71 0.93 - 16 1.00 0.87 - 34 1.68 127 0.046 64 0.91 - 22 1.25 0.83 - 42 1.65 118 0.052 62 0.89 - 26 1.5 0.87 - 49 1.62 108 0.061 57 0.88 - 30 1.75 0.72 - 57 1.59 95 0.066 55 0.87 - 34 2.00 0.66 - 65 1.54 82 0.069 52 0.86 - 38 2.25 0.61 - 73 1.51 71 0.071 54 0.85 - 43 2.5 0.56 - 81 1.47 60 0.073 60 0.84 - 48 2.75 0.52 - 87 1.45 52 0.074 63 0.83 - 52 3.00 0.49 - 93 1.42 45 0.075 66 0.82 - 56 Data Book 201 V1.0, 2001-01-01 GaAs Components CF 750 Typical Common Source Noise Parameters Bias conditions: VD = 3 V, ID = 2 mA, Z = 50 opt (F) f Rn Rn/50 Fmin MHz MAG ANG - dB 200 0.80 5 75 1.50 1.2 450 0.79 12 60 1.20 1.2 800 0.68 23 51 1.02 1.5 900 0.63 26 49 0.98 1.6 1200 0.58 34 45 0.90 1.7 1500 0.54 42 40 0.80 1.8 1800 0.52 51 36 0.72 1.9 1900 0.50 53 35 0.70 1.9 Data Book 202 V1.0, 2001-01-01 GaAs Components CF 750 Output Characteristics ID = f(VDGND); at Nominal Operating Point; S not Connected Output Characteristics ID = f(VDS); S Connected to GND EHT08528 2.5 ID mA EHT08529 50 ID mA VGGND = 0 V VGS = 0 V 40 2.0 -0.2 V -0.4 V 1.5 -0.2 V 30 -0.6 V 1.0 -0.4 V 20 -0.8 V -1 V -0.6 V 10 0.5 -0.8 V -1 V 0 0 1 2 3 4 5 6 0 7 V 8 Data Book 0 1 2 3 4 5 6 7 V 8 VDS VDGND 203 V1.0, 2001-01-01 GaAs Components CF 750 3.8 V IF 1 nF CF 750 D G S RF 1 nF LO * GND Figure 2 EHT08530 Mixer Measurement and Application Circuit (No. 1) * must be high capacitance to ensure good IF grounding at source 3.8 V RF 100 pF CF 750 D G S RF 100 pF GND EHT08531 Figure 3 Amplifier Measurement and Application Circuit (No. 2) Data Book 204 V1.0, 2001-01-01 GaAs Components CF 750 Package Outlines P-SOT143-4-1 (Small Outline Transistor) 1.1 max 2.9 0.1 1.9 0.1 max 0.3 0.1 4 +0.1 0.8 -0.05 +0.2 acc. to DIN 6784 3 1 2 10 max 1.3 0.1 A 2.6 max 10 max 0.7 0.2 0.55 -0.1 0.4 +0.1 -0.05 0.08...0.15 1.7 0.25 M 2... 30 B 0.20 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Book 205 M A GPS05559 B Dimensions in mm V1.0, 2001-01-01 GaAs HEMT CFH 120 Preliminary Data Sheet * * * * * Low noise pseudomorphic HEMT with high associated gain Low cost plastic package For low noise front end amplifiers up to 20 GHz For DBS down-converters Fully RF tested at 12 GHz 3 2 4 1 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (taped) Package1) CFH 120-08 H3s Q62705-K0603 MW-4 CFH 120-10 H4s Q62705-K0604 MW-4 1) Dimensions see Page 212. Maximum Ratings Parameter Symbol Value Unit Drain-source voltage VDS 3.0 V Drain-gate voltage VDG 4.0 V Gate-source voltage VGS - 2.0 V Drain current ID 40 mA Channel temperature TCh 150 C Storage temperature range Tstg - 65 ... + 150 C Total power dissipation (TS 51 C)1) Ptot 180 mW Parameter Symbol Value Unit Channel-soldering point source RthChS t.b.d. K/W 1) TS: Temperature measured at soldering point. Thermal Resistance Data Book 206 V1.0, 2001-01-01 GaAs Components CFH 120 Electrical Characteristics at TA = 25 C, Testconditions at DBS frequencies: VDD = 2 V, fRF = 12.0 GHz, ZS = opt, ZL = S221); unless otherwise specified Characteristics Symbol Limit Values min. typ. max. Unit Test Conditions Drain-source saturation current IDSS 0 15 35 mA VDS = 2 V VGS = 0 V Pinch-off voltage VGS(P) - 0.9 - 0.5 0.0 V VDS = 2 V ID = 120 A Gate leakage current IG - 0.05 2 A VDS = 2 V ID = 10 mA Transconductance gm - 60 - mS VDS = 2 V ID = 10 mA Noise figure1) CFH 120-08 CFH 120-10 F dB VDS = 2 V ID = 10 mA f = 12 GHz Associated gain1) CFH 120-08 CFH 120-10 GA dB VDS = 2 V ID = 10 mA f = 12 GHz 1) - - 0.65 0.85 11.5 10.5 12.0 11.0 0.8 1.0 - - Important Note: During production, the DC and RF parameters of all devices are tested according to the specification table above. Data Book 207 V1.0, 2001-01-01 GaAs Components CFH 120 Typical Common Source S-Parameters @ 2 V; 10 mA; ZO = 50 S11 f S21 S12 S22 GHz MAG Phase MAG Phase MAG Phase MAG Phase 1 0.9867 - 18.3 5.0019 162.4 0.0243 67.6 0.6473 - 13.2 1.5 0.9731 - 25.3 4.9891 156.1 0.0321 65.9 0.6362 - 18.6 2 0.9567 - 34.6 5.0098 147.9 0.0418 57.7 0.62 - 26.1 2.5 0.9388 - 44.2 5.0426 139.6 0.0569 53.7 0.6004 - 33.8 3 0.9216 - 54.7 5.0744 130.7 0.0671 49.9 0.5749 - 42.1 3.5 0.8958 - 66.2 5.0635 121 0.0767 43.2 0.5441 - 50.9 4 0.8648 - 78.1 4.9727 111.5 0.0857 35 0.5125 - 59.5 4.5 0.8368 - 89.5 4.8439 102.3 0.0927 27.7 0.4834 - 68.4 5 0.8118 - 100 4.7007 93.7 0.0995 21.7 0.4549 - 77.2 5.5 0.788 - 109.9 4.5557 85.6 0.1014 16.5 0.4277 - 85.3 6 0.7652 - 119.4 4.4351 77.8 0.1048 9.9 0.4002 - 92.8 6.5 0.7391 - 129.8 4.3539 69.5 0.1153 5 0.3652 - 101.4 7 0.7068 - 141.8 4.2413 60.7 0.1163 - 1.4 0.3239 - 112.5 7.5 0.6762 - 154.4 4.0755 51.9 0.1167 - 8.8 0.2855 - 125.9 8 0.6582 - 167 3.9131 43.5 0.1147 - 13 0.2632 - 142.2 8.5 0.6552 - 179.4 3.7588 34.8 0.112 - 18.8 0.256 - 159.4 9 0.6507 169.4 3.5656 26.4 0.1096 - 25.7 0.2585 - 173.5 9.5 0.6418 159.6 3.36 18.9 0.1075 - 31.1 0.2631 176.1 10 0.6397 150.8 3.1835 12 0.1055 - 34.7 0.2706 167 10.5 0.6407 141.8 3.0196 4.9 0.1024 - 37.3 0.2781 156.7 11 0.6429 132.9 2.8601 - 1.8 0.0935 - 41.6 0.2832 146.6 11.5 0.6612 125.3 2.7424 - 8.1 0.0915 - 42.9 0.3011 138.6 12 0.6858 117.9 2.6307 - 15.7 0.0903 - 45.9 0.3285 130.6 12.5 0.6965 111.2 2.4562 - 23 0.0848 - 48.8 0.3532 123.3 13 0.6924 106.9 2.2614 - 28.6 0.081 - 49.5 0.3746 118 13.5 0.6954 104.2 2.1392 - 33 0.0785 - 50.4 0.4004 113.7 Data Book 208 V1.0, 2001-01-01 GaAs Components CFH 120 Typical Common Source S-Parameters (cont'd) @ 2 V; 10 mA; ZO = 50 S11 f S21 S12 S22 GHz MAG Phase MAG Phase MAG Phase MAG Phase 14 0.7127 100.7 2.0661 - 38.3 0.0745 - 52.8 0.4294 109 14.5 0.7221 95.7 1.9757 - 44.3 0.0731 - 53.6 0.4493 104 15 0.7184 90.4 1.8797 - 49.2 0.0727 - 53 0.4635 100.3 15.5 0.7251 84.8 1.8219 - 54 0.0739 - 52.2 0.4902 96.8 16 0.7352 78.2 1.7571 - 60.1 0.0745 - 53.7 0.5236 91.5 16.5 0.7265 72.2 1.6396 - 65.6 0.0751 - 55.5 0.5405 85.3 17 0.7176 69.6 1.5537 - 68.4 0.0734 - 55.5 0.539 81.5 17.5 0.7383 68.9 1.5699 - 71.6 0.0737 - 55 0.5494 80.4 18 0.772 67.2 1.6188 - 76 0.078 - 56.3 0.5744 79.3 Typical Common Source Noise Parameters @ 2 V; 10 mA; ZO = 50 opt [deg] f Fmin GA GHz dB dB MAG Phase 8.0 0.48 14.6 0.329 159 0.20 10.0 0.57 13.0 0.367 - 162 0.13 12.0 0.68 12.0 0.443 - 135 0.12 14.0 0.75 11.1 0.556 - 104 0.10 Data Book 209 RN/50 V1.0, 2001-01-01 GaAs Components CFH 120 Typical Common Source S-Parameters @ 0 V; 0 mA; ZO = 50 S11 f S21 S12 S22 GHz MAG Phase MAG Phase MAG Phase MAG Phase 1 0.9957 - 13.8 0.0447 133.1 0.0293 63.6 0.2783 160.4 1.5 0.989 - 19.2 0.0494 119.3 0.0311 74.9 0.2879 154.6 2 0.9819 - 26.2 0.0589 106.4 0.0438 70.4 0.3009 148.1 2.5 0.978 - 33.4 0.0698 95.9 0.054 65.6 0.3129 141.9 3 0.9767 - 41.4 0.0812 86.3 0.0672 63.4 0.3259 136.5 3.5 0.9749 - 50.5 0.0949 78.3 0.0785 57.5 0.3397 131.1 4 0.9669 - 60.1 0.1058 69.8 0.0877 48.1 0.3529 126.4 4.5 0.9571 - 69.7 0.1152 60.7 0.0975 42.6 0.3632 122.2 5 0.9521 - 78.9 0.1254 53 0.1057 37.7 0.3723 117.4 5.5 0.9482 - 87.6 0.1352 45.8 0.1168 32.4 0.3801 112.1 6 0.9439 - 96 0.1459 39.2 0.1274 26.4 0.3919 105.9 6.5 0.9373 - 104.7 0.157 32.1 0.137 21.2 0.4106 99.8 7 0.9227 - 114.9 0.1657 24.6 0.1445 15.6 0.4339 94.6 7.5 0.901 - 126 0.1727 17.2 0.1503 8.3 0.4588 90.6 8 0.8858 - 137.7 0.1791 10 0.1596 2 0.4814 87.9 8.5 0.8882 - 149.7 0.1845 2.7 0.1627 - 4.7 0.4995 85.7 9 0.892 - 161.6 0.1879 - 4.5 0.1682 - 12.1 0.5131 83.7 9.5 0.8875 - 172.8 0.1881 - 11.3 0.1711 - 17.7 0.5253 81.1 10 0.8828 176.6 0.1878 - 17.4 0.1697 - 23.4 0.5342 77.5 10.5 0.8761 166 0.1865 - 23.3 0.1667 - 29.3 0.5404 73.4 11 0.8691 155.4 0.1833 - 28.7 0.1651 - 34.8 0.5475 69.9 11.5 0.8793 145.6 0.1846 - 34 0.1661 - 40.3 0.5585 67.3 12 0.8985 136.2 0.1824 - 40.2 0.1622 - 44.6 0.572 65 12.5 0.9004 127.2 0.1767 - 46.2 0.1573 - 50.2 0.5851 63.1 13 0.884 120.6 0.1671 - 50.2 0.1519 - 53.6 0.5935 61.6 13.5 0.8772 116.2 0.1607 - 53.1 0.1493 - 57.6 0.6024 59.5 Data Book 210 V1.0, 2001-01-01 GaAs Components CFH 120 Typical Common Source S-Parameters (cont'd) @ 0 V; 0 mA; ZO = 50 S11 f S21 S12 S22 GHz MAG Phase MAG Phase MAG Phase MAG Phase 14 0.893 111.6 0.1589 - 56.5 0.1449 - 62.7 0.6127 56.9 14.5 0.9016 105.5 0.1561 - 60.4 0.1379 - 64.3 0.6143 54.7 15 0.8926 99.1 0.1538 - 63.6 0.1357 - 65.3 0.6229 53.1 15.5 0.8926 92.6 0.1531 - 67.1 0.1404 - 68.5 0.6501 50.3 16 0.8943 85 0.1507 - 72.1 0.143 - 74.7 0.6688 45.3 16.5 0.8729 78 0.1441 - 76 0.1347 - 79.2 0.6557 40.8 17 0.8493 74.6 0.1416 - 77.7 0.1283 - 81 0.6359 39.3 17.5 0.8681 73 0.1459 - 80.6 0.1326 - 83.8 0.6392 38.8 18 0.9068 70.6 0.1528 - 84.7 0.137 - 89.6 0.652 37.3 Data Book 211 V1.0, 2001-01-01 GaAs Components CFH 120 Package Outlines MW-4 (Special Package) 2.9 0.1 B 0.5 1.1 max 0.1 max 0.7 +0.1 -0.05 4 3 1 2 +0.2 acc. to DIN 6784 10max 1.3 0.1 A 2.6 max 10max 0.65 0.08...0.15 0.4 +0.1 -0.05 2... 30 0.25 M B 0.20 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Book A GSO05553 Pin assignment: 1 = Source 2 = Drain 3 = Source 4 = Gate M 212 Dimensions in mm V1.0, 2001-01-01 P-HEMT CFH 400 Preliminary Data Sheet * Low noise figure and high associated gain for high IP3 receiver stages up to 4 GHz (F = 0.55 dB; GA = 15.7 dB @ 3 V; 10 mA; f = 1.8 GHz) * Suitable for PCS CDMA and UMTS applications * Low cost miniature package P-SOT343-4-1 * LG = 0.4 m; WG = 400 m * Tape and Reel packaging ESD: Electrostatic discharge sensitive device, observe handling precautions! SOT 343 Type Marking Ordering Code (taped) Package1) CFH 400 N4s Q62702-G0116 P-SOT343-4-1 1) Dimensions see Page 219. Maximum Ratings Parameter Symbol Value Unit Drain-source voltage VDS 5.5 V Drain-gate voltage VDG 6.5 V Gate-source voltage VGS - 2.0 V Drain current ID 80 mA Channel temperature TCh 150 C Storage temperature range Tstg - 65 ... + 150 C Total power dissipation (TS = 110 C)1) Ptot 150 mW Parameter Symbol Value Unit Channel-soldering point source RthChS 260 K/W 1) TS: Temperature measured at soldering point. Thermal Resistance Data Book 213 V1.0, 2001-01-01 GaAs Components CFH 400 Electrical Characteristics TA = 25 C, unless otherwise specified Characteristics Symbol Limit Values min. typ. max. 70 Unit Test Conditions mA VDS = 3 V, VGS = 0 V Drain-source saturation current IDSS 0 40 Pinch-off voltage VGS(P) - 0.7 - 0.25 0 V VDS = 3 V, ID = 1 mA Gate leakage current IG - - 40 A VDS = 3 V, ID = 15 mA Transconductance gm 70 100 - mS VDS = 3 V, ID = 15 mA Noise figure1) F - 0.55 - dB VDS = 3 V, ID = 10 mA, f = 1.8 GHz - 0.53 - dB VDS = 3 V ID = 15 mA f = 1.8 GHz - 15.7 - dB VDS = 3 V, ID = 10 mA, f = 1.8 GHz - 16.2 - dB VDS = 3 V, ID = 15 mA, f = 1.8 GHz - 6 - dBm VDS = 3 V, ID = 10 mA, f = 1.8 GHz - 8.5 - dBm VDS = 3 V, ID = 15 mA, f = 1.8 GHz Associated gain1) IIP31) 1) GA IIP3 Parameters are measured for input impedance for minimum noise figure and output impedance for maximum gain. Data Book 214 V1.0, 2001-01-01 GaAs Components CFH 400 Typical Common Source S-Parameters @ 3 V; 10 mA; ZO = 50 [GHz] S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang 0.2 0.9818 - 6.3 8.2506 174.6 0.0128 110.7 0.7321 - 5.3 0.3 0.9947 - 11.8 8.3347 170.2 0.0198 91.2 0.7148 - 10.4 0.4 0.9826 - 17.9 8.166 164.2 0.0288 95 0.7114 - 15.5 0.5 0.9696 - 23.8 8.1183 159.5 0.041 72 0.6999 - 20.6 0.6 0.9525 - 30.1 8.0562 154.2 0.0512 71.1 0.6835 - 26.1 0.7 0.9312 - 36 7.9081 149.9 0.0596 66.2 0.6651 - 30.8 0.8 0.9159 - 41.8 7.7814 144.7 0.0666 62.8 0.6434 - 36 0.9 0.8956 - 47.6 7.6295 140 0.0724 58.3 0.6203 - 41.1 1 0.8702 - 52.9 7.4436 135 0.0799 55.5 0.5925 - 46.3 1.1 0.8444 - 58.7 7.2593 130.8 0.0889 51.7 0.574 - 51.8 1.2 0.8144 - 64.8 7.0517 126.4 0.0938 50.1 0.5488 - 57.4 1.3 0.7919 - 70.7 6.8482 121.8 0.0994 45.4 0.5257 - 62.9 1.4 0.7663 - 76 6.7195 117.8 0.1056 42.3 0.5006 - 68.4 1.5 0.7438 - 81.9 6.4735 114 0.1097 40.4 0.477 - 73.9 1.6 0.7208 - 87 6.2591 109.9 0.1124 37.2 0.4587 - 79.1 1.7 0.6956 - 92 6.0662 106.2 0.1158 33.9 0.4444 - 85 1.8 0.6788 - 97.3 5.8346 102.3 0.1195 31.6 0.4217 - 90.5 1.9 0.6579 - 102.6 5.6395 98.9 0.1225 30.6 0.4055 - 95.2 2 0.6396 - 107.5 5.4822 95.5 0.1248 27 0.3913 - 101.5 2.1 0.6214 - 111.8 5.3077 92.2 0.1245 24.7 0.3843 - 106.5 2.2 0.6048 - 116.9 5.0469 89 0.1274 23.4 0.3738 - 111.7 2.3 0.5949 - 121 4.8822 86.2 0.1306 21.4 0.3663 - 117.1 2.4 0.5831 - 125.4 4.7575 83.1 0.1313 19.1 0.3644 - 121 2.5 0.5724 - 129.4 4.607 80.5 0.1323 18 0.355 - 126.8 3 0.5315 - 147.8 3.9289 67.4 0.1364 11.5 0.3447 - 145.9 3.5 0.5065 - 163.5 3.4181 56 0.1396 7 0.3463 - 159.9 f Data Book 215 V1.0, 2001-01-01 GaAs Components CFH 400 Typical Common Source S-Parameters (cont'd) @ 3 V; 10 mA; ZO = 50 [GHz] S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang 4 0.4948 - 176.1 3.0368 45.5 0.1397 1.6 0.3449 - 171.5 4.5 0.4889 171.3 2.7496 35.3 0.1439 - 1.8 0.3429 178 5 0.491 159.7 2.5187 25.1 0.1494 - 5.7 0.3405 166.8 f Typical Common Source Noise Parameters @ 3 V; 10 mA; ZO = 50 opt [deg] f Fmin GA GHz dB dB MAG Phase 0.9 0.42 19.9 0.73 13 0.20 1.8 0.55 15.7 0.57 35 0.16 2.4 0.60 13.7 0.45 51 0.17 3.0 0.67 12.7 0.35 72 0.13 4.0 0.70 10.7 0.33 107 0.10 Data Book 216 RN/50 V1.0, 2001-01-01 GaAs Components CFH 400 Typical Common Source S-Parameters @ 3 V; 15 mA; ZO = 50 [GHz] S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang 0.2 0.9995 - 4.3 9.9975 174.5 0.0168 128.9 0.6751 - 6.1 0.3 0.9933 - 13.3 10.0492 168.8 0.02 93.3 0.6764 - 11.2 0.4 0.9788 - 20.1 9.8365 163 0.0259 84.5 0.67 - 16.9 0.5 0.9604 - 26.7 9.7307 157.4 0.038 71.5 0.6521 - 23.4 0.6 0.9348 - 33.6 9.6242 151.7 0.047 68.3 0.6349 - 28.9 0.7 0.9115 - 40.1 9.412 147.2 0.0503 65.5 0.6091 - 34.2 0.8 0.8924 - 46.6 9.1204 141.8 0.0596 60.5 0.5844 - 40.2 0.9 0.8721 - 52.6 8.9181 136.5 0.0715 56.7 0.5641 - 45.9 1 0.8457 - 59 8.569 131.6 0.0769 52.3 0.5325 - 51.9 1.1 0.8144 - 65.1 8.3702 127.2 0.0817 49.6 0.5124 - 57.4 1.2 0.788 - 71.2 8.0757 122.3 0.0869 46 0.4814 - 62.7 1.3 0.7555 - 77.2 7.821 117.9 0.0903 44.2 0.4603 - 69.1 1.4 0.7317 - 83.5 7.548 114.3 0.0971 41.1 0.4369 - 74.5 1.5 0.7136 - 89.2 7.2741 110.1 0.1005 37.8 0.4155 - 80.9 1.6 0.6862 - 94.7 6.9825 106.5 0.1027 37.1 0.3947 - 86.4 1.7 0.6595 - 100.1 6.69 103 0.1054 34.3 0.3836 - 93.2 1.8 0.6437 - 105.3 6.4121 98.9 0.108 31.8 0.368 - 99 1.9 0.6195 - 110.4 6.1979 95.4 0.1108 29.3 0.351 - 104.6 2 0.6053 - 115.3 5.9347 92.5 0.1135 28.8 0.3428 - 110 2.1 0.5946 - 120.1 5.7644 89.3 0.1144 26.5 0.334 - 116.1 2.2 0.5814 - 124.6 5.5403 86 0.1146 24.6 0.3294 - 121.3 2.3 0.5675 - 129 5.3237 83.2 0.1167 23.6 0.3265 - 125.8 2.4 0.5583 - 133.5 5.1687 80.5 0.1179 22.6 0.3213 - 130.9 2.5 0.5487 - 137.4 4.918 78 0.1177 20.9 0.3168 - 135.6 3 0.5182 - 155.5 4.2195 65.3 0.125 15.1 0.3195 - 154.7 3.5 0.4985 - 170.8 3.6443 54.2 0.1279 10.8 0.3212 - 168.6 f Data Book 217 V1.0, 2001-01-01 GaAs Components CFH 400 Typical Common Source S-Parameters (cont'd) @ 3 V; 15 mA; ZO = 50 [GHz] S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang 4 0.4876 176.6 3.2225 44.4 0.1328 6.9 0.3248 - 178.3 4.5 0.4873 165.8 2.9196 34.6 0.1377 3.3 0.3252 171.5 5 0.4795 153.7 2.6297 24.4 0.1436 0.5 0.3221 159.9 f Typical Common Source Noise Parameters @ 3 V; 15 mA; ZO = 50 opt [deg] f Fmin GA GHz dB dB MAG Phase 0.9 0.40 20.4 0.74 13 0.18 1.8 0.53 16.2 0.57 30 0.15 2.4 0.58 14.3 0.39 52 0.14 3.0 0.63 13.0 0.31 78 0.12 4.0 0.68 11.0 0.29 109 0.10 Data Book 218 RN/50 V1.0, 2001-01-01 GaAs Components CFH 400 Package Outlines P-SOT343-4-1 (Small Outline Transistor) 2 0.2 0.9 0.1 B 1.3 0.1 0.20 M 0.1 max B 1 2 +0.2 acc. to DIN 6784 2.10.1 3 1.25 0.1 A 4 0.15 +0.1 -0.05 0.3 +0.1 0.6 +0.1 0.20 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Book A GPS05605 Pin assignment: 1 = Gate 2 = Source 3 = Drain 4 = Source M 219 Dimensions in mm V1.0, 2001-01-01 P-HEMT CFH 400T Preliminary Data Sheet * Low noise figure and high associated gain for high IP3 receiver stages up to 4 GHz (F = 0.55 dB; GA = 15.8 dB @ 3 V; 10 mA; f = 1.8 GHz) * Suitable for PCS CDMA and UMTS applications * Low cost ultra miniature package P-TSFP-4 * LG = 0.4 m; WG = 400 m * Tape and Reel packaging ESD: Electrostatic discharge sensitive device, observe handling precautions! P-TSFP-4 Type Marking Ordering Code (taped) Package1) CFH 400T N4s on request P-TSFP-4 1) Dimensions see Page 226. Maximum Ratings Parameter Symbol Value Unit Drain-source voltage VDS 5.5 V Drain-gate voltage VDG 6.5 V Gate-source voltage VGS - 2.0 V Drain current ID 80 mA Channel temperature TCh 150 C Storage temperature range Tstg - 65 ... + 150 C Total power dissipation (TS = 115 C)1) Ptot 150 mW Parameter Symbol Value Unit Channel-soldering point source RthChS 235 K/W 1) TS: Temperature measured at soldering point. Thermal Resistance Data Book 220 V1.0, 2001-01-01 GaAs Components CFH 400T Electrical Characteristics TA = 25 C, unless otherwise specified Characteristics Symbol Limit Values min. typ. max. 70 Unit Test Conditions mA VDS = 3 V, VGS = 0 V Drain-source saturation current IDSS 0 40 Pinch-off voltage VGS(P) - 0.7 - 0.25 0 V VDS = 3 V, ID = 1 mA Gate leakage current IG - - 40 A VDS = 3 V, ID = 15 mA Transconductance gm 70 100 - mS VDS = 3 V, ID = 15 mA Noise figure1) F - 0.55 - dB VDS = 3 V, ID = 10 mA, f = 1.8 GHz - 0.55 - dB VDS = 3 V ID = 15 mA f = 1.8 GHz - 15.8 - dB VDS = 3 V, ID = 10 mA, f = 1.8 GHz - 16.2 - dB VDS = 3 V, ID = 15 mA, f = 1.8 GHz - 5 - dBm VDS = 3 V, ID = 10 mA, f = 1.8 GHz - 8 - dBm VDS = 3 V, ID = 15 mA, f = 1.8 GHz Associated gain1) IIP31) 1) GA IIP3 Parameters are measured for input impedance for minimum noise figure and output impedance for maximum gain. Data Book 221 V1.0, 2001-01-01 GaAs Components CFH 400T Typical Common Source S-Parameters @ 3 V; 10 mA; ZO = 50 [GHz] S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang 0.2 0.9882 - 10.3 8.1793 170 0.018 87 0.7774 - 7.8 0.3 0.9849 - 15.4 8.0851 165.7 0.0322 81.3 0.7808 - 10.8 0.4 0.973 - 20.6 8.0564 161.3 0.0331 81.3 0.7574 - 14.6 0.5 0.9565 - 25.1 7.9929 157.6 0.0404 68.2 0.7433 - 18.3 0.6 0.938 - 29.5 7.8227 152.6 0.0459 68.2 0.7362 - 22.4 0.7 0.9129 - 34.8 7.633 148.9 0.0518 67.7 0.7113 - 25.1 0.8 0.8942 - 40.5 7.4996 143.8 0.0606 67.7 0.6892 - 28.7 0.9 0.8704 - 44.7 7.3406 139.7 0.0654 62.4 0.6743 - 31.9 1 0.8371 - 49.2 7.1202 136.2 0.0727 60.4 0.652 - 35.2 1.1 0.8113 - 53.7 6.9491 132.4 0.0786 58.2 0.6313 - 38.2 1.2 0.7879 - 57.3 6.7398 129.3 0.0828 56.7 0.6067 - 41.1 1.3 0.7649 - 62.3 6.529 125.6 0.0836 55.5 0.5847 - 43.8 1.4 0.7402 - 66.3 6.3846 122.1 0.093 51.6 0.5635 - 46.5 1.5 0.7139 - 70.1 6.1464 119.1 0.0945 51.5 0.5455 - 49.5 1.6 0.6899 - 73.9 5.9603 116.1 0.0963 49.6 0.5225 - 52.3 1.7 0.6673 - 78.7 5.8313 112.9 0.1021 49.3 0.5029 - 54.8 1.8 0.6436 - 82.1 5.5804 109.9 0.1046 46.4 0.485 - 57.2 1.9 0.627 - 86.2 5.4604 107 0.1079 44.5 0.4657 - 59.9 2 0.6068 - 90.3 5.285 104.8 0.1083 43.5 0.4469 - 62.9 2.1 0.59 - 93.7 5.0909 101.8 0.1116 42.3 0.4318 - 65 2.2 0.5695 - 97.2 4.9979 99.2 0.1137 42.3 0.4157 - 67.4 2.3 0.5567 - 100.6 4.8266 96.7 0.1154 41.6 0.4016 - 69.6 2.4 0.5415 - 103.9 4.6904 94.3 0.1165 40.9 0.3871 - 72 2.5 0.5334 - 108 4.5208 92 0.1176 39.5 0.3753 - 74.2 3 0.4789 - 122.9 4.0015 82.7 0.1267 35.8 0.3272 - 84 3.5 0.4453 - 135.8 3.4942 73.4 0.1363 33.9 0.3022 - 93.7 f Data Book 222 V1.0, 2001-01-01 GaAs Components CFH 400T Typical Common Source S-Parameters (cont'd) @ 3 V; 10 mA; ZO = 50 [GHz] S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang 4 0.4189 - 146.5 3.1487 65.2 0.1416 33.4 0.284 - 101.4 4.5 0.4051 - 156.4 2.8501 57.4 0.1512 31.9 0.2703 - 109.6 5 0.3903 - 166.1 2.6245 50.3 0.1581 32.4 0.2622 - 115.3 f Typical Common Source Noise Parameters @ 3 V; 10 mA; ZO = 50 opt [deg] f Fmin GA GHz dB dB MAG Phase 0.9 0.42 19.6 0.62 14 0.24 1.8 0.55 15.8 0.49 30 0.19 2.4 0.60 14.0 0.41 37 0.17 3.0 0.67 12.8 0.35 65 0.15 4.0 0.70 10.9 0.32 96 0.12 Data Book 223 RN/50 V1.0, 2001-01-01 GaAs Components CFH 400T Typical Common Source S-Parameters @ 3 V; 15 mA; ZO = 50 [GHz] S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang 0.2 0.9875 - 11.2 9.5847 169.2 0.0224 106.6 0.744 -8 0.3 0.975 - 17.1 9.4708 165 0.023 80.5 0.7376 - 12.2 0.4 0.9644 - 22.5 9.3024 159.5 0.0314 81.1 0.7103 - 16.1 0.5 0.9508 - 27.4 9.2356 156 0.034 72.6 0.6965 - 20.2 0.6 0.9241 - 32.4 9.0177 150 0.0468 66.3 0.6849 - 23.9 0.7 0.8921 - 38.2 8.7658 145.9 0.0524 67 0.6608 - 27.1 0.8 0.8724 - 43.8 8.5765 141 0.0573 62.8 0.6458 - 31.2 0.9 0.8419 - 48.7 8.3393 137.2 0.0622 62.7 0.6233 - 33.9 1 0.8061 - 53.2 8.0412 133.1 0.0675 62 0.5998 - 37.4 1.1 0.7742 - 57.9 7.7619 129.5 0.0738 56.4 0.5753 - 40.1 1.2 0.7535 - 62.5 7.4923 125.9 0.0721 58 0.5511 - 43 1.3 0.7252 - 66.9 7.2482 122.8 0.0801 55.6 0.5287 - 45.5 1.4 0.6969 - 71.5 7.0485 119.2 0.0841 53.2 0.5057 - 48.9 1.5 0.6769 - 75.2 6.7813 116.1 0.0885 51.4 0.4892 - 51.1 1.6 0.6484 - 79.8 6.5493 112.8 0.0912 51.5 0.4664 - 54.1 1.7 0.623 - 83.8 6.3189 109.7 0.0945 48.2 0.4483 - 56.7 1.8 0.6032 - 88.2 6.1007 106.8 0.0966 48 0.4322 - 59.3 1.9 0.5834 - 91.8 5.9087 104.6 0.0999 46.8 0.4119 - 61.9 2 0.5701 - 95.3 5.7293 101.3 0.1001 45.7 0.3932 - 64.5 2.1 0.5448 - 99.3 5.4741 99.5 0.1053 44.7 0.3819 - 66.9 2.2 0.538 - 103.1 5.3657 96.8 0.1072 43.5 0.3682 - 69.1 2.3 0.522 - 106.2 5.169 94.2 0.1085 42.6 0.3536 - 71.7 2.4 0.5066 - 109.8 5.0268 92.2 0.1111 43.5 0.3395 - 73.6 2.5 0.4967 - 112.7 4.878 89.8 0.1119 41.6 0.3298 - 75.7 3 0.4504 - 128.4 4.2346 80.6 0.1221 38.5 0.287 - 85.9 3.5 0.4206 - 141.4 3.6709 71.9 0.1278 37.8 0.2622 - 95.2 f Data Book 224 V1.0, 2001-01-01 GaAs Components CFH 400T Typical Common Source S-Parameters (cont'd) @ 3 V; 15 mA; ZO = 50 [GHz] S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang 4 0.398 - 151.8 3.295 64.3 0.138 37.6 0.2494 - 103.3 4.5 0.3862 - 161.5 2.9891 56.6 0.1502 35.8 0.237 - 110.4 5 0.3747 - 170.6 2.7394 49.6 0.1615 35.4 0.2339 - 116.4 f Typical Common Source Noise Parameters @ 3 V; 15 mA; ZO = 50 opt [deg] f Fmin GA GHz dB dB MAG Phase 0.9 0.40 20.4 0.62 18 0.2 1.8 0.53 16.2 0.45 29 0.17 2.4 0.58 14.1 0.38 39 0.17 3.0 0.63 13.0 0.34 66 0.14 4.0 0.68 11.2 0.28 102 0.11 Data Book 225 RN/50 V1.0, 2001-01-01 GaAs Components CFH 400T Package Outlines P-TSFP-4 (Special Package) 0.59 max. 1.4 0.1 0.2 +0.1 -0.05 2 0.15 0.05 0.5 0.5 1) 0.1 M 0.2 M A 4x Preproduction samples are marked on the bottom at the drainside of the device (Pin 3). Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Book 226 GPX09267 Pin assignment:1) 1 = Gate 2 = Source 3 = Drain 4 = Source 0.8 0.1 1 10 max. 3 1.2 0.1 4 A Dimensions in mm V1.0, 2001-01-01 P-HEMT CFH 800 Preliminary Data Sheet * Low noise figure and high associated gain for high IP3 receiver stages up to 4 GHz * Suitable for PCS CDMA and UMTS applications (F = 0.52 dB; GA = 15.2 dB @ 3 V; 20 mA; f = 1.8 GHz) * Low cost miniature package P-SOT343-4-1 * LG = 0.4 m; WG = 800 m * Tape and Reel packaging ESD: Electrostatic discharge sensitive device, observe handling precautions! SOT 343 Type Marking Ordering Code (taped) Package1) CFH 800 N8s on request P-SOT343-4-1 1) Dimensions see Page 235. Maximum Ratings Parameter Symbol Value Unit Drain-source voltage VDS 5.5 V Drain-gate voltage VDG 6.5 V Gate-source voltage VGS - 2.0 V Drain current ID 160 mA Channel temperature TCh 150 C Storage temperature range Tstg - 65 ... + 150 C Total power dissipation (TS 80 C)1) Ptot 350 mW Parameter Symbol Value Unit Channel-soldering point source RthChS 198 K/W 1) TS: Temperature measured at soldering point. Thermal Resistance Data Book 227 V1.0, 2001-01-01 GaAs Components CFH 800 Electrical Characteristics TA = 25 C, unless otherwise specified Characteristics Symbol Limit Values min. typ. max. 140 Unit Test Conditions mA VDS = 3 V, VGS = 0 V Drain-source saturation current IDSS 0 80 Pinch-off voltage VGS(P) - 0.7 - 0.25 0.0 V VDS = 3 V, ID = 1 mA Gate leakage current IG - - 80 A VDS = 3 V, ID = 30 mA Transconductance gm - 200 - mS VDS = 3 V, ID = 30 mA Noise figure1) F - 0.58 - dB VDS = 3 V, ID = 10 mA, f = 1.8 GHz - 0.50 - dB VDS = 3 V ID = 30 mA f = 1.8 GHz - 12.8 - dB VDS = 3 V, ID = 10 mA, f = 1.8 GHz - 15.3 - dB VDS = 3 V, ID = 30 mA, f = 1.8 GHz - 8.5 - dBm VDS = 3 V, ID = 10 mA, f = 1.8 GHz - 13 - dBm VDS = 3 V, ID = 30 mA, f = 1.8 GHz Associated gain1) IIP31) 1) GA IIP3 Parameters are measured for input impedance for minimum noise figure and output impedance for maximum gain. Data Book 228 V1.0, 2001-01-01 GaAs Components CFH 800 Typical Common Source S-Parameters @ 3 V; 10 mA; ZO = 50 [GHz] S11 Mag S11 Ang S21 Mag S12 Mag S12 Ang S22 Mag S22 Ang 0.2 0.9875 - 10.3 11.1553 170.4 0.0182 11.1 0.6686 - 10.6 0.3 0.9689 - 25 10.9524 161.7 0.0339 73.4 0.6608 - 22.7 0.4 0.9356 - 36.4 10.3938 152.1 0.0463 66.2 0.636 - 34.2 0.5 0.901 - 47.8 9.9833 144 0.0628 58.3 0.6046 - 46.5 0.6 0.8625 - 59.1 9.502 135.9 0.0782 52 0.5701 - 56.4 0.7 0.8191 - 68.7 8.9574 129.3 0.0876 49.9 0.5374 - 66.5 0.8 0.781 - 78.7 8.3831 122.6 0.0962 43.2 0.5076 - 76.5 0.9 0.7522 - 87.7 7.8624 116 0.0999 41.1 0.4797 - 85.4 1 0.7152 - 96.4 7.3406 110.7 0.1082 36.2 0.4536 - 94 1.1 0.6894 - 104.6 6.8461 105.6 0.1097 32.2 0.436 - 103.1 1.2 0.6665 - 111.8 6.4391 100.7 0.1123 28.9 0.4147 - 111.1 1.3 0.6421 - 119.1 6.0146 96.2 0.1171 27.8 0.4046 - 119.6 1.4 0.628 - 125.6 5.6846 92.3 0.1172 25.4 0.397 - 127.3 1.5 0.6205 - 132 5.3653 88.3 0.1194 22.7 0.3839 - 133.4 1.6 0.6027 - 137.6 5.0728 84.7 0.1226 20.5 0.3863 - 139.8 1.7 0.592 - 142.8 4.7463 80.7 0.1229 18.4 0.3818 - 145.3 1.8 0.5839 - 147.8 4.5226 77.7 0.1223 17.5 0.3843 - 151.5 1.9 0.5755 - 152.7 4.2789 74.7 0.1247 16.6 0.3849 - 156 2 0.5718 - 157 4.0588 71.1 0.1247 13.7 0.3891 - 160.7 2.1 0.5696 - 161 3.8702 68.9 0.1247 12.8 0.3953 - 164.5 2.2 0.5658 - 165.1 3.6661 66.4 0.1253 11.8 0.3978 - 168 2.3 0.5641 - 168.6 3.5132 63.1 0.1263 11.2 0.4016 - 171.4 2.4 0.5624 - 172 3.3779 61.4 0.1257 10.8 0.4074 - 174.4 2.5 0.5632 - 175.2 3.2166 58.3 0.1255 9.5 0.4136 - 177.7 3 0.5678 171.1 2.669 47 0.1286 7.5 0.434 171.4 3.5 0.5701 159.8 2.2745 36.1 0.1331 5.8 0.4495 162.8 f Data Book S21 Ang 229 V1.0, 2001-01-01 GaAs Components CFH 800 Typical Common Source S-Parameters (cont'd) @ 3 V; 10 mA; ZO = 50 [GHz] S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang 4 0.5736 150.3 2.0162 26.6 0.1381 4 0.462 155.5 4.5 0.5926 140.5 1.8073 16.8 0.1453 2.1 0.4707 147.9 5 0.6011 131.3 1.6283 5.8 0.151 - 0.5 0.4819 138.9 f Typical Common Source Noise Parameters @ 3 V; 10 mA; ZO = 50 opt [deg] f Fmin GA GHz dB dB MAG Phase 0.9 0.46 16.8 0.58 28 0.14 1.8 0.58 12.8 0.43 74 0.10 2.4 0.65 10.5 0.31 105 0.10 3.0 0.75 8.8 0.34 143 0.06 4.0 0.78 6.5 0.39 - 176 0.06 Data Book 230 RN/50 V1.0, 2001-01-01 GaAs Components CFH 800 Typical Common Source S-Parameters @ 3 V; 20 mA; ZO = 50 [GHz] S11 Mag S11 Ang S21 Mag S12 Mag S12 Ang S22 Mag S22 Ang 0.2 0.9827 - 14.6 15.8408 168.7 0.0237 99.6 0.5621 - 18 0.3 0.9625 - 32.2 15.4256 157.3 0.0289 67.2 0.5317 - 32 0.4 0.9126 - 45.9 14.2167 146.5 0.0455 66.3 0.503 - 46.8 0.5 0.8586 - 59.8 13.2874 137.5 0.0563 55.2 0.4742 - 62.1 0.6 0.8072 - 72.5 12.3024 128.8 0.0648 48.7 0.4455 - 74.3 0.7 0.7684 - 84.2 11.2504 122.4 0.0728 44 0.4176 - 86.6 0.8 0.7262 - 93.9 10.3085 115 0.0755 42.8 0.399 - 98.2 0.9 0.6998 - 103.2 9.5389 109.1 0.0795 37.6 0.38 - 108.2 1 0.6642 - 112.4 8.6665 104.1 0.0832 34.8 0.3672 - 117.7 1.1 0.6472 - 120.6 8.1027 99.5 0.0906 34.9 0.3658 - 127.6 1.2 0.6278 - 127.3 7.4665 95.4 0.0888 32.5 0.3573 - 134.8 1.3 0.615 - 134.3 6.9433 90.6 0.095 30.7 0.3574 - 142.8 1.4 0.6047 - 140.6 6.4905 87.7 0.0938 27.3 0.3555 - 150 1.5 0.5979 - 146.3 6.0842 83.7 0.0957 27.5 0.3611 - 155.9 1.6 0.5882 - 151.4 5.6939 80.9 0.0989 26.9 0.3648 - 160.9 1.7 0.5827 - 156.4 5.3218 77.9 0.0987 24.2 0.3698 - 166.4 1.8 0.5794 - 160.9 5.0216 74.9 0.1011 24.1 0.3754 - 170.5 1.9 0.5775 - 165.2 4.7842 71.6 0.1034 23.2 0.383 - 174.2 2 0.5731 - 169 4.4871 69.6 0.1024 23.4 0.3875 - 177.7 2.1 0.5793 - 172.8 4.2754 66.6 0.1031 21.9 0.3945 179 2.2 0.5738 - 176.4 4.0851 64.5 0.1058 21.7 0.4028 176.4 2.3 0.5775 - 179.2 3.8946 61.7 0.1078 21.4 0.4091 173.8 2.4 0.5751 177.6 3.7309 60 0.1095 21.3 0.4153 171.6 2.5 0.5793 174.5 3.5565 57.4 0.1095 21.6 0.42 169 3 0.5797 163.2 2.9449 46.8 0.1194 18.8 0.4435 160.3 3.5 0.5897 152 2.5077 36.8 0.1281 16.4 0.4595 153.2 f Data Book S21 Ang 231 V1.0, 2001-01-01 GaAs Components CFH 800 Typical Common Source S-Parameters (cont'd) @ 3 V; 20 mA; ZO = 50 [GHz] S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang 4 0.5939 143.3 2.2133 27.9 0.1387 14.2 0.4652 146.4 4.5 0.6008 135.2 1.9881 18.2 0.1505 11.2 0.472 139.5 5 0.6111 126 1.7922 8.5 0.1627 6.9 0.4855 131.2 f Typical Common Source Noise Parameters @ 3 V; 20 mA; ZO = 50 opt [deg] f Fmin GA GHz dB dB MAG Phase 0.9 0.41 19.2 0.55 26 0.11 1.8 0.52 15.2 0.26 84 0.09 2.4 0.59 12.9 0.26 108 0.08 3.0 0.65 11.4 0.29 154 0.06 4.0 0.68 9.4 0.34 - 169 0.05 Data Book 232 RN/50 V1.0, 2001-01-01 GaAs Components CFH 800 Typical Common Source S-Parameters @ 3 V; 30 mA; ZO = 50 [GHz] S11 Mag S11 Ang S21 Mag S12 Mag S12 Ang S22 Mag S22 Ang 0.2 0.9801 - 18.5 18.4328 167.2 0.0162 74.7 0.4721 - 20.5 0.3 0.9428 - 35.4 17.7612 155 0.0307 70.1 0.4668 - 38.4 0.4 0.8911 - 51.2 16.1747 143.3 0.0456 58.9 0.4425 - 54.7 0.5 0.8333 - 65.8 14.8546 134.3 0.0503 55 0.4129 - 71.5 0.6 0.7789 - 79.6 13.5629 125.4 0.059 53.1 0.3879 - 85.5 0.7 0.7374 - 91.3 12.3137 118.8 0.0645 46.5 0.3712 - 98.9 0.8 0.6962 - 101 11.1673 112.3 0.0661 43.8 0.3541 - 111 0.9 0.6719 - 110.6 10.1519 106.3 0.0752 38.2 0.3491 - 121.9 1 0.6531 - 119.4 9.2385 101 0.0764 36.4 0.3469 - 130.6 1.1 0.6303 - 127.7 8.578 97 0.0808 36.3 0.3433 - 139.8 1.2 0.6188 - 134.3 7.8882 92.7 0.0789 33.5 0.3444 - 147.1 1.3 0.6008 - 141.1 7.3348 89.2 0.082 31.6 0.3476 - 154.4 1.4 0.5973 - 146.7 6.7981 85.5 0.0826 33.4 0.3541 - 160.5 1.5 0.5931 - 152.2 6.3407 81.8 0.0871 30.1 0.3606 - 165.6 1.6 0.5892 - 157.2 5.914 79.3 0.0895 30.7 0.367 - 170.7 1.7 0.5842 - 161.9 5.5086 76.1 0.0911 29.9 0.3773 - 174.5 1.8 0.5815 - 166.1 5.2483 73.1 0.0932 29.8 0.3796 - 178.1 1.9 0.5809 - 170.2 4.973 71.1 0.0946 29.1 0.3861 178.1 2 0.5819 - 173.9 4.6601 68.1 0.0977 26.7 0.3958 174.9 2.1 0.5806 - 177.3 4.455 65.6 0.0982 27.1 0.4024 172.5 2.2 0.5829 179.4 4.236 63.7 0.0994 26.4 0.4127 170 2.3 0.5834 176.6 4.0352 61 0.1033 26.4 0.4172 168.1 2.4 0.5831 173.5 3.8723 58.9 0.1029 25 0.4221 165.8 2.5 0.5858 171.3 3.6965 57 0.1058 24.7 0.4273 163.4 3 0.5918 159.3 3.048 46.9 0.117 24 0.4508 156 3.5 0.5971 149.1 2.6066 37.5 0.1285 21.4 0.4637 149.6 f Data Book S21 Ang 233 V1.0, 2001-01-01 GaAs Components CFH 800 Typical Common Source S-Parameters (cont'd) @ 3 V; 30 mA; ZO = 50 [GHz] S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang 4 0.606 140.3 2.2927 28.2 0.1419 17.8 0.4735 143.1 4.5 0.6094 132.7 2.0513 19.3 0.1539 14.3 0.479 136.2 5 0.6205 123.4 1.8372 9.4 0.1691 9.7 0.4862 127.9 f Typical Common Source Noise Parameters @ 3 V; 30 mA; ZO = 50 opt [deg] f Fmin GA GHz dB dB MAG Phase 0.9 0.38 19.6 0.55 28 0.09 1.8 0.50 15.3 0.21 77 0.08 2.4 0.57 13.1 0.24 111 0.07 3.0 0.63 11.7 0.28 161 0.06 4.0 0.66 9.7 0.36 - 166 0.05 Data Book 234 RN/50 V1.0, 2001-01-01 GaAs Components CFH 800 Package Outlines P-SOT343-4-1 (Small Outline Transistor) 2 0.2 0.9 0.1 B 1.3 0.1 0.20 M 0.1 max B 1 2 +0.2 acc. to DIN 6784 2.10.1 3 1.25 0.1 A 4 0.15 +0.1 -0.05 0.3 +0.1 0.6 +0.1 0.20 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Book A GPS05605 Pin assignment: 1 = Gate 2 = Source 3 = Drain 4 = Source M 235 Dimensions in mm V1.0, 2001-01-01 P-HEMT CFH 800T Preliminary Data Sheet * Low noise figure and high associated gain for high IP3 receiver stages up to 4 GHz * Suitable for PCS CDMA and UMTS applications (F = 0.52 dB; GA = 14.5 dB @ 3 V; 20 mA; f = 1.8 GHz) * Low cost ultra miniature package P-TSFP-4 * LG = 0.4 m; WG = 800 m * Tape and Reel packaging ESD: Electrostatic discharge sensitive device, observe handling precautions! P-TSFP-4 Type Marking Ordering Code (taped) Package1) CFH 800T N8s on request P-TSFP-4 1) Dimensions see Page 244. Maximum Ratings Parameter Symbol Value Unit Drain-source voltage VDS 5.5 V Drain-gate voltage VDG 6.5 V Gate-source voltage VGS - 2.0 V Drain current ID 160 mA Channel temperature TCh 150 C Storage temperature range Tstg - 65 ... + 150 C Total power dissipation (TS = 90 C)1) Ptot 350 mW Parameter Symbol Value Unit Channel-soldering point source RthChS 173 K/W 1) TS: Temperature measured at soldering point. Thermal Resistance Data Book 236 V1.0, 2001-01-01 GaAs Components CFH 800T Electrical Characteristics TA = 25 C, unless otherwise specified Characteristics Symbol Limit Values min. typ. max. 140 Unit Test Conditions mA VDS = 3 V, VGS = 0 V Drain-source saturation current IDSS 0 80 Pinch-off voltage VGS(P) - 0.7 - 0.25 0.0 V VDS = 3 V, ID = 1 mA Gate leakage current IG - - 80 A VDS = 3 V, ID = 30 mA Transconductance gm - 200 - mS VDS = 3 V, ID = 30 mA Noise figure1) F - 0.58 - dB VDS = 3 V, ID = 10 mA, f = 1.8 GHz - 0.50 - dB VDS = 3 V ID = 30 mA f = 1.8 GHz - 13.8 - dB VDS = 3 V, ID = 10 mA, f = 1.8 GHz - 14.8 - dB VDS = 3 V, ID = 30 mA, f = 1.8 GHz - 8.5 - dBm VDS = 3 V, ID = 10 mA, f = 1.8 GHz - 13 - dBm VDS = 3 V, ID = 30 mA, f = 1.8 GHz Associated gain1) IIP31) 1) GA IIP3 Parameters are measured for input impedance for minimum noise figure and output impedance for maximum gain. Data Book 237 V1.0, 2001-01-01 GaAs Components CFH 800T Typical Common Source S-Parameters @ 3 V; 10 mA; ZO = 50 [GHz] S11 Mag S11 Ang S21 Mag S12 Mag S12 Ang S22 Mag S22 Ang 0.2 0.9685 - 23 10.8519 162.3 0.0371 68 0.6714 - 19.5 0.3 0.9446 - 33.2 10.4928 155 0.0478 75.4 0.6511 - 28.4 0.4 0.904 - 43.1 9.9926 146.3 0.0528 67 0.6097 - 36.8 0.5 0.8685 - 52.5 9.5743 140.4 0.0647 59.5 0.5794 - 45.3 0.6 0.8232 - 60.8 9.0295 133 0.0741 57.7 0.5495 - 52.7 0.7 0.7818 - 70.1 8.4834 127.5 0.0858 53.1 0.5133 - 59.4 0.8 0.7388 - 78.6 7.913 121.7 0.0883 47.3 0.4822 - 66.9 0.9 0.7197 - 85.5 7.4791 116.7 0.092 46.3 0.4603 - 72.5 1 0.6714 - 92.2 6.9966 112.2 0.0963 43.5 0.4311 - 78.6 1.1 0.6425 - 99 6.5833 108.2 0.1011 40.4 0.4095 - 84 1.2 0.6236 - 105.1 6.2 104.7 0.1049 39.3 0.3902 - 90.1 1.3 0.6048 - 111 5.8636 101 0.1072 38.1 0.3708 - 95 1.4 0.5917 - 116.5 5.5307 97.4 0.1092 35.9 0.3555 - 99.7 1.5 0.577 - 121 5.2255 94.8 0.1104 34.1 0.3458 - 104.7 1.6 0.558 - 126.1 4.9793 91.4 0.1132 35.4 0.3309 - 109.3 1.7 0.5521 - 131 4.7395 88.9 0.1145 33.1 0.326 - 113.7 1.8 0.5372 - 135.5 4.4973 85.8 0.1165 32.1 0.3175 - 118.3 1.9 0.5324 - 139.8 4.2827 83 0.1175 32.6 0.3099 - 122.5 2 0.53 - 143.4 4.1137 80.9 0.1189 31.7 0.3083 - 126.1 2.1 0.5275 - 147.6 3.9254 78.3 0.1204 29.7 0.305 - 129.7 2.2 0.5241 - 150.4 3.7795 76.2 0.1231 31.5 0.3016 - 133 2.3 0.52 - 153.8 3.6349 74.1 0.1204 31.4 0.3017 - 136.4 2.4 0.5179 - 157.1 3.4967 72.1 0.1215 31.2 0.2995 - 139.6 2.5 0.5169 - 159.5 3.3602 69.7 0.1254 30.8 0.3001 - 142.2 3 0.5151 - 172 2.8637 61.2 0.1332 29.4 0.3066 - 152.5 3.5 0.5201 178.1 2.4462 52.7 0.143 31.9 0.3197 - 160.8 f Data Book S21 Ang 238 V1.0, 2001-01-01 GaAs Components CFH 800T Typical Common Source S-Parameters (cont'd) @ 3 V; 10 mA; ZO = 50 [GHz] S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang 4 0.5165 169.6 2.1939 44.4 0.153 31.5 0.3335 - 167.1 4.5 0.523 161.7 1.9843 36.5 0.1679 31.2 0.3457 - 173.2 5 0.5299 153.6 1.8016 29.4 0.1822 31.5 0.3562 - 178.7 f Typical Common Source Noise Parameters @ 3 V; 10 mA; ZO = 50 opt [deg] f Fmin GA GHz dB dB MAG Phase 0.9 0.46 17.4 0.64 30 0.13 1.8 0.58 13.8 0.33 65 0.11 2.4 0.65 12.1 0.27 104 0.09 3.0 0.75 10.8 0.29 135 0.07 4.0 0.78 9.0 0.4 169 0.05 Data Book 239 RN/50 V1.0, 2001-01-01 GaAs Components CFH 800T Typical Common Source S-Parameters @ 3 V; 20 mA; ZO = 50 [GHz] S11 Mag S11 Ang S21 Mag S12 Mag S12 Ang S22 Mag S22 Ang 0.2 0.9564 - 28.7 14.9526 158.5 0.0308 75.5 0.5363 - 25.1 0.3 0.9163 - 41 14.1681 149.5 0.0392 71.8 0.524 - 36.8 0.4 0.8595 - 52.7 13.1503 140.7 0.0469 67.1 0.4807 - 47.3 0.5 0.8136 - 63.9 12.3162 133.7 0.057 60.6 0.4428 - 57.6 0.6 0.763 - 73.1 11.3768 126.3 0.0612 52.6 0.4184 - 67 0.7 0.7205 - 83.2 10.4459 121 0.0691 49.8 0.3898 - 75.1 0.8 0.6795 - 91.4 9.5991 115.2 0.0724 48.6 0.3631 - 83.1 0.9 0.6448 - 99.7 8.9428 110.5 0.0755 48.9 0.3434 - 90.1 1 0.612 - 106.1 8.2514 106.9 0.0812 46.6 0.3274 - 96.5 1.1 0.5883 - 112.6 7.6772 103 0.0833 44.1 0.3119 - 103.4 1.2 0.5724 - 119 7.2005 99.6 0.0882 42.6 0.2988 - 109.5 1.3 0.5545 - 124.5 6.6892 95.9 0.09 41.9 0.2887 - 114.6 1.4 0.5491 - 129.6 6.3199 93.4 0.0933 41 0.2811 - 120.4 1.5 0.5362 - 134.5 5.9572 91 0.0956 41.8 0.2721 - 125.3 1.6 0.5252 - 139.5 5.6518 87.9 0.0984 41.3 0.2701 - 130.7 1.7 0.5206 - 143.5 5.3485 85.3 0.1007 41 0.2675 - 134.2 1.8 0.5135 - 147.9 5.0503 83.1 0.1005 41.2 0.2687 - 138.6 1.9 0.5118 - 152.1 4.7655 80.2 0.1058 41 0.2691 - 142.8 2 0.5106 - 155.5 4.6026 78.1 0.1067 40.6 0.2677 - 146.8 2.1 0.5058 - 158.2 4.3387 76.7 0.1079 40.9 0.2677 - 150.1 2.2 0.5075 - 161.5 4.1754 74.1 0.1109 40.7 0.2711 - 152.4 2.3 0.5076 - 164.4 4.0155 72.5 0.113 40.6 0.2736 - 155.9 2.4 0.5046 - 167.3 3.8586 69.8 0.1156 40.4 0.2747 - 157.9 2.5 0.5073 - 169.8 3.7014 68.2 0.1172 40.3 0.2786 - 160.5 3 0.5088 179.4 3.1251 60.4 0.1335 40.3 0.2908 - 168.5 3.5 0.5158 170.1 2.6854 52.6 0.1458 39.6 0.304 - 175.2 f Data Book S21 Ang 240 V1.0, 2001-01-01 GaAs Components CFH 800T Typical Common Source S-Parameters (cont'd) @ 3 V; 20 mA; ZO = 50 [GHz] S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang 4 0.5155 161.9 2.3928 45.3 0.1615 38.8 0.3169 - 179.6 4.5 0.5158 155.2 2.1701 37.7 0.1803 36.9 0.329 174.8 5 0.5218 148.3 1.9708 31.1 0.1974 36 0.3358 170.5 f Typical Common Source Noise Parameters @ 3 V; 20 mA; ZO = 50 opt [deg] f Fmin GA GHz dB dB MAG Phase 0.9 0.41 18.8 0.60 30 0.10 1.8 0.52 14.5 0.26 63 0.09 2.4 0.59 12.8 0.25 104 0.07 3.0 0.65 11.3 0.25 148 0.06 4.0 0.68 9.4 0.36 180 0.05 Data Book 241 RN/50 V1.0, 2001-01-01 GaAs Components CFH 800T Typical Common Source S-Parameters @ 3 V; 30 mA; ZO = 50 [GHz] S11 Mag S11 Ang S21 Mag S12 Mag S12 Ang S22 Mag S22 Ang 0.2 0.9496 - 31.4 17.3575 156.4 0.0207 60.7 0.4634 - 29.1 0.3 0.9038 - 45 16.0516 146.5 0.038 61.3 0.4471 - 42.5 0.4 0.8388 - 58.1 14.8002 137.9 0.0459 62.5 0.4107 - 55.5 0.5 0.7777 - 69.5 13.6048 130.6 0.0519 55.8 0.3744 - 65.8 0.6 0.7304 - 79.2 12.4362 123.1 0.0581 53.1 0.3484 - 76.1 0.7 0.6837 - 89.1 11.3533 118 0.0626 52.6 0.329 - 84.6 0.8 0.6507 - 97.8 10.296 112.5 0.066 52.4 0.307 - 92.8 0.9 0.6221 - 105.7 9.5278 107.5 0.0699 50.4 0.2947 - 100.6 1 0.5918 - 112.9 8.8153 104 0.0739 48.9 0.2829 - 108.2 1.1 0.5586 - 119.4 8.1505 100.3 0.0762 46.8 0.2706 - 114.2 1.2 0.5544 - 125.2 7.5898 97.4 0.0789 47.4 0.2654 - 121.7 1.3 0.5393 - 131.2 7.0646 94.3 0.0829 46.2 0.2603 - 125.9 1.4 0.5317 - 136 6.6651 91.4 0.0866 45.2 0.2548 - 131.7 1.5 0.524 - 140.5 6.2916 88.7 0.0869 45.8 0.2542 - 137 1.6 0.5136 - 145.2 5.892 86.3 0.0899 46.4 0.2546 - 142 1.7 0.5092 - 149.4 5.5885 84 0.0942 45.1 0.2562 - 145.9 1.8 0.5074 - 152.9 5.2413 81.9 0.0974 44.5 0.2565 - 149.3 1.9 0.5051 - 157.1 4.9939 79.7 0.0993 44.5 0.2586 - 153 2 0.5048 - 160.2 4.7848 77 0.1027 45 0.2609 - 156.2 2.1 0.5027 - 163.3 4.5154 75.2 0.1041 45.5 0.2621 - 159.4 2.2 0.503 - 166 4.3472 73.1 0.1094 45.3 0.2646 - 161.6 2.3 0.5031 - 169 4.2031 71.7 0.1107 44.9 0.2703 - 164.7 2.4 0.5021 - 171.7 4.0007 69.7 0.1115 44.5 0.2737 - 166.8 2.5 0.5059 - 174 3.8495 67.9 0.1174 44.5 0.2746 - 168.7 3 0.5101 175.5 3.2739 60.3 0.1316 44.4 0.2905 - 175.4 3.5 0.5182 166.8 2.7706 53 0.15 43.4 0.3032 178.9 f Data Book S21 Ang 242 V1.0, 2001-01-01 GaAs Components CFH 800T Typical Common Source S-Parameters (cont'd) @ 3 V; 30 mA; ZO = 50 [GHz] S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang 4 0.5186 159.5 2.4912 45.5 0.1661 42.1 0.3161 173.9 4.5 0.5174 152.9 2.2495 38 0.1878 39.2 0.3278 169.7 5 0.5117 145.7 2.0364 31.5 0.2034 37.7 0.334 165.6 f Typical Common Source Noise Parameters @ 3 V; 30 mA; ZO = 50 opt [deg] f Fmin GA GHz dB dB MAG Phase 0.9 0.38 18.8 0.57 30 0.10 1.8 0.50 14.8 0.25 69 0.08 2.4 0.57 13.1 0.22 120 0.07 3.0 0.63 11.6 0.25 153 0.06 4.0 0.66 9.6 0.34 185 0.06 Data Book 243 RN/50 V1.0, 2001-01-01 GaAs Components CFH 800T Package Outlines P-TSFP-4 (Special Package) 0.59 max. 1.4 0.1 0.2 +0.1 -0.05 2 0.15 0.05 0.5 0.5 Pin assignment: 1 = Gate 2 = Source 3 = Drain 4 = Source 1) 0.1 M 0.2 M A 4x Preproduction samples are marked on the bottom at the drainside of the device (Pin 3). Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Book 244 GPX09267 1) 0.8 0.1 1 10 max. 3 1.2 0.1 4 A Dimensions in mm V1.0, 2001-01-01 GaAs FET CFY 30 Data Sheet * Low noise (Fmin = 1.4 dB @ 4 GHz) * High gain (11.5 dB typ. @ 4 GHz) * For oscillators up to 12 GHz * For amplifiers up to 6 GHz * Ion implanted planar structure * Chip all gold metallization * Chip nitride passivation ESD: Electrostatic discharge sensitive device, observe handling precautions! Type CFY 30 1) Marking A2 Ordering Code (tape and reel) Q62703-F97 SOT-143 Pin Configuration 1 2 3 4 S D S G Package1) P-SOT143-4-1 Dimensions see Page 252. Maximum Ratings Parameter Symbol Value Unit Drain-source voltage VDS 5 V Drain-gate voltage VDG 7 V Gate-source voltage VGS - 4 ... + 0.5 V Drain current ID 80 mA Channel temperature TCh 150 C Storage temperature range Tstg - 40 ... + 150 C Total power dissipat. (TS 48 C)1) Ptot 250 mW 1) TS is measured on the source 1 lead at the soldering point to the PCB. Thermal Resistance Parameter Symbol Value Unit Channel-soldering point1) RthChS < 320 K/W 1) TS is measured on the source 1 lead at the soldering point to the PCB. Data Book 245 V1.0, 2001-01-01 GaAs Components CFY 30 Electrical Characteristics TA = 25 C, unless otherwise specified Characteristics Symbol Limit Values min. typ. max. Unit Test Conditions Drain-source saturation current IDSS 20 50 80 mA VDS = 3.5 V VGS = 0 V Pinch-off voltage VGS(P) - 0.5 - 1.3 - 4.0 V VDS = 3.5 V ID = 1 mA Transconductance gm 20 30 - mS VDS = 3.5 V ID = 15 mA Gate leakage current IG - 0.1 2 A VDS = 3.5 V ID = 15 mA Noise figure f = 4 GHz f = 6 GHz NF dB VDS = 3.5 V ID = 15 mA Associated gain f = 4 GHz f = 6 GHz GA dB VDS = 3.5 V ID = 15 mA - - 1.4 2.0 1.6 - 10 - 11.5 8.9 - - Maximum available gain MAG - 11.2 - dB VDS = 3.5 V ID = 15 mA f = 6 GHz Maximum stable gain MSG - 14.4 - dB VDS = 3.5 V ID = 15 mA f = 4 GHz Power output at 1 dB compression P- 1 dB - 16 - dBm VDS = 4 V ID = 30 mA f = 6 GHz Data Book 246 V1.0, 2001-01-01 GaAs Components CFY 30 Typical Common Source Noise Parameters ID = 15 mA, VDS = 3 V, Z0 = 50 opt f Fmin GA GHz dB dB MAG 2 1.0 15.5 4 1.4 6 RN N F50 G(F50 ) ANG - dB dB 0.72 27 49 0.17 2.9 10.0 11.5 0.64 61 29 0.17 2.7 9.3 2.0 8.9 0.46 101 19 0.30 2.8 7.5 8 2.5 7.1 0.31 153 9 0.31 2.8 6.4 10 3.0 5.8 0.34 - 133 14 0.38 3.4 4.2 12 3.5 5.0 0.41 - 93 28 0.42 4.1 2.9 Data Book 247 V1.0, 2001-01-01 GaAs Components CFY 30 Output Characteristics ID = f (VDS) Total Power Dissipation Ptot = f (TS; TA) EHT08533 200 mW Ptot 180 ID 160 EHT08534 50 mA VGS = 0 V 40 -0.2 V 30 -0.4 V 140 TA TS 120 100 -0.6 V 20 80 -0.8 V 60 -1 V 10 40 -1.2 V 20 0 -1.4 V 0 50 100 0 C 150 Data Book 0 1 2 3 4 V 5 VDS TA ; TS 248 V1.0, 2001-01-01 GaAs Components CFY 30 Typical Common Source S-Parameters ID = 15 mA, VD = 3.5 V, Z0 = 50 f S11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.1 1.00 -1 2.43 178 0.003 87 0.70 -1 0.4 1.00 -6 2.43 171 0.010 23 0.69 -5 0.8 0.99 - 14 2.43 162 0.020 78 0.68 - 11 1.2 0.98 - 21 2.43 154 0.030 72 0.67 - 15 1.6 0.97 - 28 2.44 145 0.040 66 0.66 - 20 2.0 0.96 - 36 2.45 137 0.050 60 0.65 - 26 2.4 0.93 - 44 2.47 129 0.058 55 0.64 - 30 2.8 0.90 - 53 2.49 120 0.066 50 0.62 - 35 3.2 0.87 - 62 2.50 111 0.074 45 0.60 - 41 3.6 0.83 - 72 2.50 102 0.082 39 0.57 - 47 4.0 0.80 - 82 2.50 93 0.090 32 0.54 - 54 4.4 0.77 - 92 2.51 83 0.097 25 0.50 - 61 4.8 0.74 - 104 2.49 73 0.103 18 0.46 - 67 5.2 0.70 - 115 2.45 64 0.108 12 0.43 - 73 5.6 0.66 - 127 2.41 54 0.112 6 0.40 - 80 6.0 0.63 - 139 2.36 45 0.114 0 0.36 - 88 6.4 0.60 - 150 2.30 37 0.115 -6 0.31 - 98 6.8 0.57 - 162 2.24 27 0.116 - 11 0.27 - 110 7.2 0.55 - 174 2.19 17 0.116 - 17 0.24 - 122 7.6 0.54 172 2.14 8 0.116 - 22 0.21 - 137 8.0 0.53 160 2.08 -2 0.115 - 27 0.19 - 154 8.4 0.54 147 2.00 - 11 0.113 - 32 0.18 - 173 8.8 0.55 135 1.92 - 21 0.111 - 37 0.18 171 9.2 0.56 124 1.83 - 30 0.109 - 42 0.19 155 9.6 0.57 114 1.72 - 40 0.107 - 46 0.21 141 10.0 0.58 106 1.61 - 48 0.104 - 50 0.23 128 Data Book 249 V1.0, 2001-01-01 GaAs Components CFY 30 Typical Common Source S-Parameters (cont'd) ID = 15 mA, VD = 3.5 V, Z0 = 50 f S11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG 10.4 0.59 98 1.51 - 56 0.102 - 53 0.26 118 10.8 0.60 91 1.42 - 62 0.101 - 56 0.29 108 11.2 0.61 85 1.35 - 69 0.099 - 58 0.32 100 11.6 0.62 79 1.30 - 75 0.098 - 60 0.34 93 12.0 0.62 74 1.25 - 81 0.096 - 63 0.36 85 Typical Common Source S-Parameters ID = 30 mA, VD = 3.5 V, Z0 = 50 f S11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.1 1.00 -2 3.23 178 0.002 85 0.71 -1 0.4 1.00 -8 3.21 171 0.009 79 0.70 -6 0.8 0.99 - 16 3.19 162 0.017 73 0.69 - 11 1.2 0.97 - 24 3.18 153 0.025 70 0.67 - 16 1.6 0.95 - 32 3.17 143 0.034 65 0.66 - 21 2.0 0.92 - 40 3.17 135 0.042 61 0.65 - 26 2.4 0.90 - 48 3.17 127 0.051 56 0.63 - 31 2.8 0.87 - 58 3.17 119 0.059 50 0.61 - 36 3.2 0.83 - 68 3.16 109 0.067 45 0.58 - 42 3.6 0.79 - 79 3.12 99 0.073 40 0.55 - 48 4.0 0.75 - 91 3.08 88 0.079 34 0.52 - 54 4.4 0.71 - 102 3.04 78 0.084 28 0.50 - 60 4.8 0.67 - 114 3.00 68 0.089 21 0.47 - 66 5.2 0.63 - 126 2.95 58 0.092 15 0.43 - 73 5.6 0.60 - 138 2.87 49 0.094 10 0.38 - 81 6.0 0.57 - 150 2.77 40 0.096 4 0.34 - 89 Data Book 250 V1.0, 2001-01-01 GaAs Components CFY 30 Typical Common Source S-Parameters (cont'd) ID = 30 mA, VD = 3.5 V, Z0 = 50 f S11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG 6.4 0.54 - 162 2.68 31 0.097 -1 0.30 - 99 6.8 0.52 - 174 2.58 22 0.098 -6 0.27 - 109 7.2 0.51 173 2.50 14 0.099 - 11 0.24 - 121 7.6 0.50 160 2.43 5 0.099 - 16 0.21 - 134 8.0 0.50 147 2.36 -4 0.099 - 20 0.18 - 148 8.4 0.51 135 2.26 - 13 0.099 - 24 0.16 - 164 8.8 0.52 125 2.15 - 22 0.099 - 29 0.16 176 9.2 0.54 115 2.04 - 30 0.099 - 33 0.17 158 9.6 0.55 107 1.93 - 39 0.099 - 37 0.19 142 10.0 0.57 99 1.82 - 47 0.099 - 41 0.22 128 10.4 0.59 91 1.71 - 54 0.100 - 44 0.25 118 10.8 0.60 85 1.60 - 62 0.101 - 47 0.27 109 11.2 0.61 79 1.51 - 69 0.102 - 49 0.30 100 11.6 0.62 73 1.44 - 75 0.103 - 52 0.32 92 12.0 0.62 68 1.38 - 82 0.104 - 55 0.34 85 Data Book 251 V1.0, 2001-01-01 GaAs Components CFY 30 Package Outlines P-SOT143-4-1 (Small Outline Transistor) 1.1 max 2.9 0.1 1.9 0.1 max 0.3 0.1 4 +0.1 0.8 -0.05 +0.2 acc. to DIN 6784 3 1 2 10 max 1.3 0.1 A 2.6 max 10 max 0.7 0.2 0.55 -0.1 0.4 +0.1 -0.05 0.08...0.15 1.7 0.25 M 2... 30 B 0.20 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Book 252 M A GPS05559 B Dimensions in mm V1.0, 2001-01-01 GaAs FET CFY 35 Data Sheet * * * * Low noise High gain For low-noise front end amplifiers For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (tape and reel) CFY 35-20 NA Q62702-F1393 CFY 35-23 NB Q62702-F1394 1) MW-4 Pin Configuration 1 2 3 4 S D S G Package1) MW-4 MW-4 Dimensions see Page 257. Maximum Ratings Parameter Symbol Value Unit Drain-source voltage VDS 5 V Drain-gate voltage VDG 6 V Gate-source voltage VGS -4...0 V Drain current ID 60 mA Channel temperature TCh 150 C Storage temperature range Tstg - 40 ... + 150 C Total power dissipation (TS 53 C)1) Ptot 250 mW 1) TS is measured on the source 1 lead at the soldering point to the PCB. Thermal Resistance Parameter Symbol Value Unit Channel-soldering point1) RthChS 540 K/W 1) TS is measured on the source 1 lead at the soldering point to the PCB. Data Book 253 V1.0, 2001-01-01 GaAs Components CFY 35 Electrical Characteristics TA = 25 C, unless otherwise specified Characteristics Symbol Limit Values min. typ. max. Unit Test Conditions Drain-source saturation current IDSS 10 25 45 mA VDS = 2.5 V, VGS = 0 V Pinch-off voltage VGS(P) - 0.2 - 1.2 - 2.5 V VDS = 2.5 V ID = 1 mA Transconductance gm 20 30 - mS VDS = 2.5 V ID = 10 mA Gate leakage current IG - 0.1 2 A VDS = 2.5 V ID = 10 mA Noise figure CFY 35-20 CFY 35-23 F dB VDS = 2.5 V ID = 10 mA f = 12 GHz Associated gain GA dB VDS = 2.5 V ID = 10 mA f = 12 GHz - - 1.9 2.2 2.0 2.3 8 8.5 - Typical Common Source Noise Parameters ID = 10 mA, VDS = 2.5 V, Z0 = 50 opt f Fmin GA RN rN N F50 G(F50 ) GHz dB dB MAG ANG - - dB dB 2 0.60 17.6 0.82 32 35 0.7 0.08 2.35 12.9 4 0.83 14.2 0.73 65 25 0.5 0.11 2.30 11.2 6 1.10 11.8 0.65 105 14 0.28 0.14 2.35 9.5 8 1.38 10.5 0.60 146 5.5 0.11 0.19 2.55 7.8 10 1.64 9.4 0.58 - 177 3 0.06 0.22 2.80 6.5 12 1.90 8.5 0.61 - 139 10 0.2 0.28 3.50 4.9 14 2.15 7.9 0.62 - 110 26 0.52 0.33 3.95 3.8 Data Book 254 V1.0, 2001-01-01 GaAs Components CFY 35 Total Power Dissipation Ptot = f (TS; TA), package mounted on aluminium Ptot EHT08535 300 mW 200 TA TS 100 0 0 50 100 C 150 TA ; TS Typical Common Source S-Parameters ID = 10 mA, VD = 2.5 V, Z0 = 50 f S11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.5 0.99 - 9.3 2.930 170.9 0.014 82.6 0.76 - 6.1 1.0 0.98 - 19.1 2.938 161.8 0.026 75.9 0.76 - 12.6 1.5 0.97 - 29.2 2.948 152.4 0.039 67.8 0.75 - 19.4 2.0 0.95 - 39.8 2.936 142.7 0.051 60.3 0.73 - 26.5 2.5 0.93 - 50.5 2.904 133.0 0.062 52.7 0.71 - 33.5 3.0 0.91 - 60.8 2.859 123.7 0.072 45.7 0.69 - 40.0 3.5 0.89 - 70.9 2.818 114.8 0.082 39.0 0.67 - 46.2 4.0 0.87 - 81.2 2.791 105.9 0.090 32.6 0.64 - 52.5 4.5 0.85 - 91.9 2.770 96.7 0.098 26.1 0.61 - 59.1 5.0 0.82 - 103.2 2.736 87.1 0.104 18.9 0.58 - 66.5 5.5 0.79 - 114.9 2.672 77.4 0.108 11.8 0.54 - 74.6 Data Book 255 V1.0, 2001-01-01 GaAs Components CFY 35 Typical Common Source S-Parameters (cont'd) ID = 10 mA, VD = 2.5 V, Z0 = 50 f S11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG 6.0 0.77 - 126.2 2.586 68.0 0.111 5.3 0.51 - 83.0 6.5 0.75 - 136.8 2.489 59.0 0.111 - 0.9 0.48 - 91.6 7.0 0.74 - 146.7 2.392 50.4 0.110 - 6.5 0.46 - 100.0 7.5 0.73 - 155.7 2.299 42.1 0.108 - 11.3 0.45 - 107.8 8.0 0.72 - 164.1 2.211 34.2 0.106 - 15.5 0.44 - 114.9 8.5 0.71 - 172.1 2.133 26.7 0.104 - 19.1 0.42 - 121.7 9.0 0.70 180.0 2.065 19.3 0.101 - 22.4 0.41 - 128.8 9.5 0.70 172.1 2.007 12.1 0.099 - 25.2 0.39 - 136.7 10.0 0.70 163.8 1.960 4.5 0.096 - 27.3 0.37 - 146.1 10.5 0.70 155.0 1.907 - 3.6 0.094 - 29.5 0.36 - 157.2 11.0 0.70 146.3 1.837 - 11.9 0.092 - 31.7 0.36 - 169.1 11.5 0.70 138.1 1.751 - 19.8 0.088 - 33.2 0.36 179.0 12.0 0.70 130.9 1.664 - 26.9 0.085 - 33.2 0.37 168.0 12.5 0.72 124.9 1.589 - 33.5 0.084 - 32.3 0.39 158.6 13.0 0.73 118.8 1.526 - 40.2 0.085 - 31.1 0.41 150.2 13.5 0.74 112.3 1.462 - 47.1 0.086 - 30.5 0.43 142.3 14.0 0.75 106.0 1.399 - 54.0 0.089 - 31.3 0.44 134.1 14.5 0.76 100.0 1.339 - 60.7 0.093 - 32.0 0.46 125.7 15.0 0.77 94.3 1.275 - 67.1 0.096 - 32.6 0.47 116.8 15.5 0.78 89.3 1.209 - 73.2 0.099 - 33.2 0.49 108.3 16.0 0.80 85.3 1.156 - 78.7 0.103 - 34.1 0.52 101.3 16.5 0.82 81.4 1.113 - 84.3 0.107 - 35.6 0.55 95.5 17.0 0.82 77.4 1.073 - 90.1 0.114 - 37.9 0.57 90.1 17.5 0.82 72.5 1.036 - 96.0 0.120 - 40.6 0.58 84.1 18.0 0.82 69.9 1.010 - 99.4 0.129 - 41.2 0.58 80.3 Data Book 256 V1.0, 2001-01-01 GaAs Components CFY 35 Package Outlines MW-4 (Special Package) 2.9 0.1 B 0.5 1.1 max 0.1 max 3 1 2 +0.2 acc. to DIN 6784 10max 1.3 0.1 0.7 +0.1 -0.05 4 2.6 max 10max 0.65 A 0.08...0.15 0.4 +0.1 -0.05 2... 30 M B 0.20 M A GSO05553 0.25 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Book 257 Dimensions in mm V1.0, 2001-01-01 GaAs MMIC CGB 91 Target Data Sheet * * * * * HBT power amplifier for 800 MHz AMPS, CDMA and TDMA portable cellular phones Integrated temperature compensated bias circuit Power down control CMOS- switchable high/low-power mode Internal input match P-VQFN-24-3 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (taped) Package CGB 91 CGB 91 on request P-VQFN-24-3 Maximum Ratings Parameter Symbol Max. Value Unit Positive supply voltage VC t.b.d. V Supply current IC t.b.d. A Channel temperature TCh 150 C Storage temperature Tstg - 55 ... + 150 C Pulse peak power dissipation PPulse t.b.d. W Total power dissipation (TS 80 C) TS: Temperature at soldering point Ptot t.b.d. W Thermal Resistance Parameter Symbol Value Unit Channel-soldering point RthChS t.b.d. K/W Data Book 258 V1.0, 2001-01-01 GaAs Components CGB 91 Functional Block Diagram VREF When this voltage is 2.8 V, all circuits are in normal operation-mode. When VREF = low, all circuits are shut off. VMODE A digital CMOS-signal is used to set the PA quiescent current in high mode (VMODE = 0 V, IQ = 150 mA) and in low mode (VMODE = 3 V, IQ = 60 mA). High mode should be used for best linearity in CDMA/TDMA operation at high output power levels. Low mode should be used for best efficiency in AMPS and low power CDMA/TDMA operation. VCB VMODE VREF1 VREF2 Control Circuit RF IN I/P Match VC1 IM VC2 O/P Match RF OUT EHT09190 Figure 1 Data Book Block Diagram 259 V1.0, 2001-01-01 GaAs Components CGB 91 Pin Configuration Pin No. Symbol Configuration 3 RF IN RF input 5 IM Interstage match 8 VREF1 Reference voltage for BIAS stage 1 11 VREF2 Reference voltage for BIAS stage 2 12 VMODE Voltage for High-/low idle current mode 13 VCB Supply voltage for BIAS circuitry 14 H2 2nd harmonic trap 16 RF OUT RF output 17 RF OUT RF output 18 RF OUT RF output 20 VC2 Supply voltage for 2nd stage 22 VC1 Supply voltage for 1nd stage 1, 2, 4, 6, 7, GND 9, 10, 15, 19, 21, 23, 24 Data Book Ground 260 V1.0, 2001-01-01 GaAs Components CGB 91 Electrical Characteristics (TA = 25 C, ZS = ZL = 50 , VC = 3.7 V, VREF = 2.8 V, VMODE 0.5 V, unless otherwise specified) Characteristics Symbol Limit Values Unit Test Conditions min. typ. max. Operating frequency f range 824 - 849 MHz - Receive band noise Prx power - - - 136 dBm/ Hz 869 MHz < f < 894 MHz Stability (all spuriVSWR ous below - 70 dBc) - - - - 5 20 - In band Out of band Harmonics - - - 30 dBc POUT < 32 dBm AMPS output power POUT 32 - - dBm POUT = 32 dBm; VC = 3.2 V Gain G - 26 - dB POUT = 32 dBm; VC = 3.2 V Efficiency PAE - 50 - % POUT = 32 dBm; VC = 3.2 V TDMA output power POUT 30 - - dBm - Gain 25 - 28 20 - - dB PStep < POUT 30 dBm POUT PStep - 16 - dBm - dBc POUT 29 dBm; VC = 3.2 V POUT 30 dBm; VC = 3.7 V % POUT = 30 dBm VC = 3.7 V Overall H2, H3 ... Analog Mode AMPS Digital Mode TDMA G Maximum linear out- PStep put power in low mode operation Adj. channel power rejection Offset = 30 kHz Offset = 60 kHz ACPR ALPR 29 48 - - - - Efficiency PAE - 40 - Data Book 261 V1.0, 2001-01-01 GaAs Components CGB 91 Electrical Characteristics (cont'd) (TA = 25 C, ZS = ZL = 50 , VC = 3.7 V, VREF = 2.8 V, VMODE 0.5 V, unless otherwise specified) Characteristics Symbol Limit Values Unit Test Conditions min. typ. max. CDMA output power POUT 30 - - dBm - Gain 25 - 28 20 - - dB PStep < POUT 30 dBm POUT PStep - 16 - dBm - dBc POUT 29 dBm; VC = 3.2 V POUT 30 dBm; VC = 3.7 V % VC = 3.7 V; Digital Mode CDMA G Maximum linear out- PStep put power in low mode operation Adj. channel power rejection Offset = 885 kHz ACPR Offset = 1.98 MHz ALPR Efficiency POUT = 30 dBm; POUT = PStep 44 56 - - - - PAE - - 35 7 - - Power Supply Power supply voltage VCC 3.2 3.7 4.2 V - Reference voltage VREF - 2.8 - V Imax = 10 mA Idle current IQ - - 150 60 - - mA VMODE = low VMODE = high; Imax = 1.5 mA Turn On/Off time tON/tOFF - - 6 s - - - 10 A - - 30 - + 110 C - Power down current IPD Case operating temperature Data Book TCase 262 V1.0, 2001-01-01 GaAs Components CGB 91 Package Outlines GVQ09253 P-VQFN-24-3 (Plastic Very Thin Profile Quad Flat Non Leaded Package) Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Book 263 Dimensions in mm V1.0, 2001-01-01 GaAs MMIC CGB 191 Target Data Sheet * * * * * HBT power amplifier for 1900 MHz CDMA, TDMA and WCDMA portable cellular phones Integrated temperature compensated bias circuit Power down control CMOS- switchable high/low-power mode Internal input match P-VQFN-24-3 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (taped) Package CGB 191 CGB 191 Q62702-G0131 P-VQFN-24-3 Maximum Ratings Parameter Symbol Max. Value Unit Positive supply voltage VC t.b.d. V Supply current IC t.b.d. A Channel temperature TCh 150 C Storage temperature Tstg - 55 ... + 150 C Pulse peak power dissipation PPulse t.b.d. W Total power dissipation (TS 80 C) TS: Temperature at soldering point Ptot t.b.d. W Thermal Resistance Parameter Symbol Value Unit Channel-soldering point RthChS t.b.d. K/W Data Book 264 V1.0, 2001-01-01 GaAs Components CGB 191 Functional Block Diagram VREF When this voltage is 2.8 V, all circuits are in normal operation-mode. When VREF = low, all circuits are shut off. VMODE A digital CMOS-signal is used to set the PA quiescent current in high mode (VMODE = 0 V, IQ = 150 mA) and in low mode (VMODE = 3 V, IQ = 75 mA). High mode should be used for best linearity at full output power. Low mode should be used to increase efficiency at reduced output power levels. VC VMODE VREF1/2 , VREF3 VC1 VC2 VC3 Control Circuit RF IN RF OUT EHT09191 Figure 1 Block Diagram Pin Configuration Pin No. Symbol Configuration 3 Vc1 Supply voltage for 1st stage 6 RF IN RF input 8 VREF1/2 Reference voltage for BIAS stage 1/2 11 VREF3 Reference voltage for BIAS stage 3 12 VMODE Voltage for high-/low idle current mode 14 VC Supply voltage for BIAS circuitry 15 H2 2nd harmonic trap Data Book 265 V1.0, 2001-01-01 GaAs Components CGB 191 Pin Configuration (cont'd) Pin No. Symbol Configuration 16 OT Output match 17 RF OUT RF output 18 RF OUT RF output 19 VC3 Supply voltage for 3rd stage 22, 23 VC2 Supply voltage for 2nd stage 1, 2, 4, 5, GND 7, 9, 10, 13, 20, 21, 24 Ground Electrical Characteristics (TA = 25 C, ZS = ZL = 50 , VC = 3.7 V, VREF = 2.8 V, VMODE = 2.5 V, unless otherwise specified) Characteristics Symbol Limit Values Unit Test Conditions min. typ. max. Operating frequency f range 1850 - 1910 MHz - Receive band noise power - - - 139 dBm/ Hz 1930 MHz < f < 1990 MHz - - 5 10 - In band Out of band H2, H3 ... - - - 30 dBc POUT < 29 dBm Overall Prx Stability (all spurious VSWR below - 70 dBc) Harmonics Data Book 266 V1.0, 2001-01-01 GaAs Components CGB 191 Electrical Characteristics (cont'd) (TA = 25 C, ZS = ZL = 50 , VC = 3.7 V, VREF = 2.8 V, VMODE = 2.5 V, unless otherwise specified) Characteristics Symbol Limit Values min. typ. max. Unit Test Conditions Digital Mode CDMA CDMA output power POUT 29 - - dBm - Gain G 24 28 - dB - Adj. channel power rejection ACPR ALPR 44 56 - - - - dBc Offset = 1.25 MHz Offset = 2.25 MHz POUT = 29 dBm Efficiency PAE - 35 - % POUT = 29 dBm VC = 3.7 V TDMA output power POUT 29 - - dBm - Gain G 24 28 - dB - Adj. channel power rejection ACPR ALPR 29 48 - - - - dBc - Efficiency PAE - 32 - % POUT = 29 dBm VC = 3.7 V Power supply voltage VCC 3.2 3.7 4.2 V - Reference voltage VREF - 2.8 - V - Idle current IQ - - 150 75 - - mA VMODE = low VMODE = high Turn On/Off time tON/tOFF - - 6 s - Power down current IPD - - 10 A - Case operating temperature TCase - 30 - + 110 C - Digital Mode TDMA Power Supply Data Book 267 V1.0, 2001-01-01 GaAs Components CGB 191 Package Outlines GVQ09253 P-VQFN-24-3 (Plastic Very Thin Profile Quad Flat Non Leaded Package) Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Book 268 Dimensions in mm V1.0, 2001-01-01 GaAs MMIC CGB 240 Preliminary Data Sheet * 2 stages Bluetooth InGaP HBT-Power Amplifier * Single Voltage Supply * Operating voltage range: 2.0 to 6 V * POUT = 23 dBm at VD = 3.2 V * Overall power added efficiency up to 50% * 4 Power Steps (Analog Power Control) * High PAE at Low Power Mode 16 dBm/30% * High harmonic suppression typ. 35 dBc * Easy external matching ESD: Electrostatic discharge sensitive device, observe handling precautions! Applications: Bluetooth WLAN Home-RF Cordless Phones IEEE802.11 ISM-band spread spectrum P-TSSOP-10-2 Type Marking Ordering Code (taped) Package CGB 240 CGB 240 Q62702-G0174 P-TSSOP-10-2 Maximum Ratings Parameter Symbol Max. Value Unit Positive supply voltage VCC 6 V Supply current ICC 0.5 A Maximum input power PIN max 10 dBm Channel temperature TCh 150 C Storage temperature Tstg - 55 ... + 150 C Total power dissipation (TS 80 C) TS: Temperature at soldering point Ptot 0.7 W Pulse peak power PPulse 2.0 W Data Book 269 V1.0, 2001-01-01 GaAs Components CGB 240 Thermal Resistance Parameter Symbol Value Unit Channel-soldering point RthChS 100 K/W Functional Block Diagram VC1 VCtrl1 VCtrl2 6 7 1, 2 RF IN 3 8, 9 11 GND Figure 1 11 GND RF OUT / VC2 EHT09153 Block Diagram Pin Configuration Pin No. Symbol Configuration 1 VC1 Supply voltage for 1st stage/Interstage match 2 VC1 Supply voltage for 1st stage 3 RF IN RF input 4 N.C. - 5 N.C. - 6 VCtrl1 Control 1st stage 7 VCtrl2 Control 2nd stage 8, 9 VC2 Supply 2nd stage/RF output 10 N.C. - 11 GND Package RF and DC ground Data Book 270 V1.0, 2001-01-01 GaAs Components CGB 240 Electrical Characteristics (Bluetooth-Application) (TA = 25 C, f = 2.4 ... 2.5 GHz, ZS = ZL = 50 , unless otherwise specified) Characteristics Symbol Limit Values min. typ. max. Unit Test Conditions Supply current ICC 100 130 150 mA VCC = 3.2 V; PIN = - 10 dBm; VCON = 2.5 V Gain G 23 25 28 dB VCC = 3.2 V; PIN = - 10 dBm; VCON = 2.5 V Output Power PO 22.0 23.0 24.0 dBm VCC = 3.2 V; PIN = + 3 dBm; VCON = 2.5 V 40 50 - % VCC = 3.0 V; PIN = + 3 dBm; VCON = 2.5 V Overall Power added PAE Efficiency Output Power PO - 17 - dBm VCC = 3.2 V; PIN = + 3 dBm; VCON = 1.5 V Supply current ICC - 52 - mA VCC = 3.2 V; PIN = + 3 dBm; VCON = 1.5 V - 32 - % VCC = 3.2 V; PIN = + 3 dBm; VCON = 1.5 V Overall Power added PAE Efficiency Output Power PO - 12 - dBm VCC = 3.2 V; PIN = + 3 dBm; VCON = 1.3 V Supply current ICC - 25 - mA VCC = 3.2 V; PIN = + 3 dBm; VCON = 1.3 V - 20 - % VCC = 3.2 V; PIN = + 3 dBm; VCON = 1.3 V - 7 - dBm VCC = 3.2 V; PIN = + 3 dBm; VCON = 1.2 V Overall Power added PAE Efficiency Output Power Data Book PO 271 V1.0, 2001-01-01 GaAs Components CGB 240 Electrical Characteristics (Bluetooth-Application) (cont'd) (TA = 25 C, f = 2.4 ... 2.5 GHz, ZS = ZL = 50 , unless otherwise specified) Characteristics Supply current Symbol ICC Overall Power added PAE Efficiency Limit Values typ. max. - 15 - mA VD = 3.2 V; PIN = + 3 dBm; VCON = 1.2 V - 10 - % VD = 3.2 V; PIN = + 3 dBm; VCON = 1.2 V - - 10 A VCC = 4.8 V; ICO Off Isolation S21 - Stability - Data Book Test Conditions min. Leakage current (no input power) Stability Unit Txon = 0 V - 26 dB Txon = 0 V; PIN = 3 dBm; VCON = 0 V All spurious output more than 70 dB below desired signal level. - PIN = 3 dBm, VD = 3.6 V, ZS = 50 All spurious output more than 70 dB below desired signal level. - 272 - Load VSWR = 6:1 for all phase PIN = 5 dBm, VD = 5.0 V, ZS = 50 Load VSWR = 6:1 for all phase V1.0, 2001-01-01 GaAs Components CGB 240 Bluetooth Measurements VC1, VC2 = 3.2 V; PIN = 3 dBm; VCtrl1 = VCtrl2 = 2.5 V; f = 2.45 GHz; TA = 25 C; ZS = ZL = 50 POUT, PAE vs. VCtrl, PIN = 3 dBm, f = 2.45 GHz POUT vs. VCtrl @ VCC = 3.2 V PIN = 0/3 dBm, f = 2.45 GHz EHT09154 25 dBm POUT 20 90 % 80 PAE POUT @ PIN = 3 dBm 15 70 10 60 30 dBm POUT 25 EHT09155 20 15 10 PAE 5 50 5 0 40 POUT @ PIN = 0 dBm POUT @ PIN = 3 dBm 0 -5 30 -10 20 -10 -15 10 -15 -20 1 1.2 1.4 1.6 1.8 2 2.2 2.4 -5 0 V 2.8 -20 V 2.8 VCtrl VCtrl Data Book 1 1.2 1.4 1.6 1.8 2 2.2 2.4 273 V1.0, 2001-01-01 GaAs Components CGB 240 Evaluation Board Schematic VCC R1 C1 TRL1 Input 22 pF TRL2 10 pF 50 C4 2.2 pF 50 10 C5 1 2 3 4 5 C6 IC1 10 RF IN N.C. N.C. TRL3 8 RF OUT1 VCtrl2 7 6 1 nF C2 Output C3 22 pF 0.8 pF R3 C7 22 nH 50 VCtrl1 CGB 240 1 F L1 N.C. I-Match 9 VC1 RF OUT2 3.9 k VCtrl R2 820 EHT09156 Figure 2 Data Book 274 V1.0, 2001-01-01 GaAs Components R1 CGB 240 CGB 240 Bluetooth PA C6 C2 GND R3 R2 C1 C4 RF IN C3 RF OUT L1 C5 C7 VCtrl Infineon Technologies AG Figure 3 VCC EHT09157 Assembly Drawing Board material: Epoxy; r = 4.8; h = 0.5 mm Evaluation Board Parts List Part Type Position Description Manufacturer Part Number Capacitor C1 22 pF 0402 Murata COG - Capacitor C2 22 pF 0402 Murata COG - Capacitor C3 1.0 pF 0402 AVX/KYOCERA 04023J0R8BBW Capacitor C4 2.2 pF 0402 Murata COG - Capacitor C5 10 pF 0402 Murata COG - Capacitor C6 1 F 0603 Murata X7R - Capacitor C7 1 nF 0402 Murata X7R - Inductor L1 22 nH 0603 TOKO LL1608-FS Resistor R1 10 0402 Mira - Resistor R2 820 0402 Mira - Resistor R3 3.9 k 0402 Mira - Microstripline TRL1 L = 4.0 mm, W = 0.35 mm r = 4.8, d = 0.2 mm ZL = 50 Microstripline TRL2 L = 0.8 mm, W = 0.35 mm r = 4.8, d = 0.2 mm ZL = 50 Microstripline TRL3 L = 5.0 mm, W = 0.35 mm r = 4.8, d = 0.2 mm ZL = 50 Data Book 275 V1.0, 2001-01-01 GaAs Components CGB 240 Package Outlines 0.5 0.1 A A 0.22 0.05 0.08 M 6 max. 0.42 +0.15 -0.1 ABC 4.9 0.25 A B C 1.6 2.4 B +0.08 0.125 -0.05 3 0.1 H 0.09 0.15 max. 0.85 0.1 1.1 max. P-TSSOP-10-2 (Plastic Thin Shrink Small Outline Package) C GPS09230 3 0.1 Index Marking Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Book 276 Dimensions in mm V1.0, 2001-01-01 GSM PA-Module CGM 20G Target Data Sheet Release 2.8 * * * * * * * * * * Dual Band Power Amplifier Module 900/1800 MHz GSM and PCN Operating Voltage Range: 2.7 to 5.0 V POUT = 34.3/32.5 dBm at VBat = 3.2 V Overall Power Added Efficiency 50%/43% 50 In- and Outputs Positive Power Control Voltage 0 V to 2.1 V GPRS Class 12 (4 TX-Slots) Low input power required (3 dBm) Metal cap for improved shielding ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (taped) Package CGM 20G on request Q62702-G0104 C-MMA-xx-y Maximum Ratings Parameter Symbol Value Unit Positive supply voltage VBat 7.0 V Auxiliary supply voltage VCC 3.5 V Supply current IBat 4.0 A Input power PIN 15 dBm Maximum operating temperature Tmax + 80 C Storage temperature Tstg - 30 ... + 100 C APC Voltage Range VAPC 0 ... + 4.3 V Data Book 277 V1.0, 2001-01-01 GaAs Components CGM 20G Maximum Ratings (cont'd) Parameter Symbol Value Unit Total Power Dissipation (GSM) TS < 80 C; TS = Temperature at soldering point PtotGSM 4.0 W Total Power Dissipation (PCN) TS < 80 C; TS = Temperature at soldering point PtotPCN 2.5 W Pulse peak power (dissipated, GSM) TON (pulsed mode) < 1 ms 1 ms < TON (pulsed mode) < 2.5 ms GPRS class 12 (TS < 80 C) GPRS class 12 (TS < 100 C) PPulse Pulse peak power (dissipated, PCN) TON (pulsed mode) < 1 ms 1 ms < TON (pulsed mode) < 2.5 ms GPRS class 12 (TS < 80 C) GPRS class 12 (TS < 100 C) PPulse W 10.0 8.0 5.5 4.0 W 7.0 5.0 3.5 2.5 Thermal Resistance Parameter Symbol Value Unit Junction solder point GSM RthJ-SGSM 18 K/W Junction solder point PCN RthJ-SPCN 28 K/W Data Book 278 V1.0, 2001-01-01 GaAs Components CGM 20G VBand GND 19 GND PIN PCN VAPC GND 18 17 VNEG_ON 16 15 1 14 GND 2 13 POUT PCN 12 GND 11 POUT GSM 10 GND VCtrl - Logic GND 3 Drain-Switch R ON = 40 m PIN GSM GND 5 6 VBat Figure 1 Data Book NVG f = 230 kHz 4 7 8 9 N.C. VCC GND_NVG EHT09192 Functional Block Diagram 279 V1.0, 2001-01-01 GaAs Components CGM 20G Pin Configuration Pin No. Function Configuration 1 GND RF and DC ground 2 PIN PCN RF Input 1800 MHz 3 GND DC-Supply RF and DC Ground 4 PIN GSM RF Input for 900 MHz 5 GND RF and DC Ground 6 VBat DC-Supply-Amplifier 7 GND RF and DC Ground 8 VCC DC-Supply 2.8 V 9 GND_NVG Ground NVG 10 GND RF and DC Ground 11 POUT GSM RF Output 900 MHz 12 GND RF and DC Ground 13 POUT PCN RF Output 1800 MHz 14 GND RF and DC Ground 15 VNEG_ON Enable Negative Voltage Generator Off = 0 ... 0.5 V; On = 1.5 ... 2.8 V 16 VAPC Power Control Voltage 17 GND RF and DC Ground 18 VBand Band Select GSM: 0 ... 0.5 V; PCN: 1.5 ... 2.8 V 19 - 24 GND RF and DC Ground (Heatsink) Data Book 280 V1.0, 2001-01-01 GaAs Components CGM 20G DC Characteristics Electrical Characteristics (On GSM Application Board) TA = 25 C, ZS = ZL = 50 , duty cycle 12.5%, tON = 577 s; unless otherwise specified Characteristics Symbol Limit Values min. typ. max. Unit Quiescent current IQBat - - 100 A Logic input current (VBand, VNEG_ON) IImax - - 25 A VAPC input current IVapcmax - - 25 A Logic threshold low (VBand, VNEG_ON) Vth-l - - 0.5 V Logic threshold high (VBand, VNEG_ON) Vth-h 1.5 - - V VCC input current peak during start-up (VNEG_ON = high) II_Vcc_pk - < 50 60 mA VCC input current average (VNEG_ON = high) II_Vcc_avg - < 10 15 mA GSM-Operation Electrical Characteristics (On GSM Application Board) TA = 25 C, ZS = ZL = 50 , duty cycle 12.5%, tON = 577 s; unless otherwise specified Characteristics Symbol Limit Values min. typ. max. Unit Test Conditions Frequency Range F 880 - 915 MHz - Supply Current IBat - 1.7 - A VBat = 3.2 V; PIN = + 3 dBm Input Power for nominal POUT PIN 3 5 7 dBm - Power Gain G - 31.3 - dB VBat = 3.2 V; PIN = + 3 dBm Output Power POUT - 33.1 - dBm VBat = 2.8 V; PIN = + 3 dBm Data Book 281 V1.0, 2001-01-01 GaAs Components CGM 20G Electrical Characteristics (On GSM Application Board) (cont'd) TA = 25 C, ZS = ZL = 50 , duty cycle 12.5%, tON = 577 s; unless otherwise specified Characteristics Symbol Limit Values min. typ. max. Unit Test Conditions Output Power POUT - 34.3 - dBm VBat = 3.2 V; PIN = + 3 dBm Output Power POUT - 34.8 - dBm VBat = 3.5 V; PIN = + 3 dBm Overall Power Added Efficiency PAE 45 50 - % VBat = 3.2 V; PIN = + 5 dBm Harmonics 2 f0 3 f0 > 3 f0 - dBm - APC Voltage Range VAPC V - Dynamic Range - dB VAPC = - - - -6 -6 < - 10 - - - + 0.2 ... + 2.1 - 60 - POUT + 0.2 ... + 2.1 V Slope POUT/VAPC - - - 200 dB/V - Carrier Switching Time trGSM - - 3 s - Rx Noise Power PN - - - 72 dBm POUT < 34.3 dBm; f = 925 ... 935 MHz; RBW = 100 kHz Rx Noise Power PN - - - 84 dBm POUT < 34.3 dBm; f = 935 ... 960 MHz; RBW = 100 kHz Input VSWR - - - 2.4:1 - Z0 = 50 Isolation POUTisol - - 30 - 25 dBm PIN = 7 dBm; VAPC = 0.2 V Data Book 282 V1.0, 2001-01-01 GaAs Components CGM 20G Electrical Characteristics (On GSM Application Board) (cont'd) TA = 25 C, ZS = ZL = 50 , duty cycle 12.5%, tON = 577 s; unless otherwise specified Characteristics Symbol Cross-Isolation GSM-PCN measured output power at PCN output POUTPCNl Load mismatch - Limit Values min. typ. max. - - - 25 Unit Test Conditions dBm POUT GSM > 34.0 dBm; terminated with 50 No module damage for 10 s - PIN = 5 dBm, VBat 4.6 V, ZS = 50 Load VSWR = 10:1 for all phase Stability - No Parasitic Oscillation > - 36 dBm - PIN = 5 dBm, VBat 4.6 V, ZS = 50 Load VSWR = 6:1 for all phase Remark: Output power at GPRS mode up to 50% dutycycle shows less then 0.1 dB deviation in average power measurement. Data Book 283 V1.0, 2001-01-01 GaAs Components CGM 20G PCN(DCS1800)-Operation Electrical Characteristics (On PCN Application Board) TA = 25 C, ZS = ZL = 50 , duty cycle 12.5%, tON = 577 s; unless otherwise specified Characteristics Symbol Limit Values min. typ. max. Unit Test Conditions Frequency Range f 1710 - 1785 MHz - Supply Current IBat - 1.2 - A VBat = 3.2 V; PIN = + 3 dBm Input Power PIN 3 5 7 dBm - Power Gain G - 29 - dB VBat = 3.2 V; PIN = + 3 dBm Output Power POUT - 31.5 - dBm VBat = 2.8 V; PIN = + 3 dBm Output Power POUT - 32.5 - dBm VBat = 3.2 V; PIN = + 3 dBm Output Power POUT - 33.3 - dBm VBat = 3.5 V; PIN = + 3 dBm Overall Power Added Efficiency PAE 38 43 - % VBat = 3.2 V; PIN = + 3 dBm Harmonics 2 f0 3 f0 > 3 f0 - dBm - APC Voltage Range VAPC V - Dynamic Range - dB VAPC = - - - -6 -6 < - 10 - - - + 0.2 ... + 2.1 - 60 - POUT + 0.2 ... + 2.1 V Slope POUT/VAPC - - - 200 dB/V - Carrier Switching Time trPCN - - 3 s - Rx Noise Power PN - - - 82 dBm POUT < 32.5 dBm; f = 1805 - 1880 MHz; RBW = 100 kHz Data Book 284 V1.0, 2001-01-01 GaAs Components CGM 20G Electrical Characteristics (On PCN Application Board) (cont'd) TA = 25 C, ZS = ZL = 50 , duty cycle 12.5%, tON = 577 s; unless otherwise specified Characteristics Symbol Limit Values min. typ. max. Unit Test Conditions Input VSWR - - - 2:1 - Z0 = 50 Isolation POUTIsol - - 40 - dBm PIN = 7 dBm; VAPC = 0.2 V Load mismatch - No module damage for 10 s - PIN = 5 dBm, VBat 4.6 V, ZS = 50 , Load VSWR = 10:1 for all phase Stability - No Parasitic Oscillation > - 36 dBm - PIN = 5 dBm, VBat 4.6 V, ZS = 50 , Load VSWR = 6:1 for all phase Determination of Permissible Total Power Dissipation for Continuous and Pulse Operation The dissipated power is the power which remains in the chip and heats the device. It does not contain RF signals which are coupled out consistently. a) Continuous Wave/DC Operation For the determination of the permissible total power dissipation Ptot-DC from the diagram below it is necessary to obtain the temperature of the soldering point TS first. There are two cases: * When RthSA (soldering point to ambient) is not known: Measure TS with a temperature sensor at the leads where the heat is transferred from the device to the board (normally at the widest source or ground lead for GaAs). Use a small sensor of low heat transport, for example a thermoelement (< 1 mm) with thin wires or a temperature indicating paper while the device is operating. * When RthSA is already known: TS = PDiss x RthSA + TA Data Book 285 V1.0, 2001-01-01 GaAs Components CGM 20G Permissible Total Power Dissipation in DC Operation EHT09202 5000 mW Ptot DC 4000 3500 3000 2500 2000 1500 1000 500 0 0 25 50 75 100 125 C 175 TS Temperature of soldering point, TS Data Book 286 V1.0, 2001-01-01 GaAs Components CGM 20G b) Pulsed Operation For the calculation of the permissible pulse load Ptot-max the following formula is applicable: Ptot-max = Ptot-DC x Pulse factor = Ptot-DC x (Ptot-max/Ptot-DC) Use the values for Ptot-DC as derived from the above diagram and for the pulse factor = Ptot-max/Ptot-DC from the following diagram to get a specific value. Pulse Factor EHT09203 5 tp Ptot max Ptot DC tp D=T T 4 D= 0.005 0.01 0.02 0.05 0.1 0.2 0.5 3 2 1 10-5 10-4 10-3 10-2 10-1 s 100 tp Ptot-max should not exceed the absolute maximum rating for the dissipated power PPulse = "Pulse peak power" = 10 W. c) Reliability Considerations This procedure yields the upper limit for the power dissipation for continuous wave (cw) and pulse applications which corresponds to the maximum allowed channel temperature. For best reliability keep the channel temperature low. The following formula allows to track the individual contributions which determine the channel temperature. TCh = (PDiss x Channel temperature (= junction temperature) Power dissipated in the Rth of device from Temperature of chip. It does not contain channel to soldering soldering point, point decoupled RF-power. measured or calculated Data Book RthChS) + 287 TS V1.0, 2001-01-01 GaAs Components CGM 20G Top view CAP 1.6 0.2 Cavity 12 + + + + + + + 10 Marking + + + + + + + (0.8) 10 11 20 23 12 19 24 13 14 18 16 17 15 (0.85) (2.75) (0.85) (1.05) (2.95) (1.05) 0.65 0.55 (1.05) (0.75) (0.8) (0.8) 1.65 3.05 8.95 Data Book (0.8) Pin 1 1 (1.05) 22 (2.2) 21 (0.8) Figure 2 (0.8) 9 (0.55) (0.7) (0.3) (0.8) 8 7 (3.5) 2 (1.05) (2) (0.85) 6 (0.3) (1.6) (0.8) (2) 3 (0.8) (0.8) (2.2) 4 (0.85) (0.8) 5 0.55 0.65 (2.95) (2.75) (1.05) 1.2 3 (1.05) 7 8.8 (0.8) (0.8) (1.05) Bottom view EHT09204 C-MMA-xx-y (Low Temperature Cofired Ceramic) 288 V1.0, 2001-01-01 GaAs Module CGM 800C Target Data Sheet * * * * * * HBT power amplifier module for 800 MHz AMPS and CDMA portable cellular phones Integrated temperature compensated bias circuit Power down control CMOS-switchable high/low-power mode Input and output matched to 50 6 x 6 mm2 LTCC-Module ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (taped) Package CGM 800C CGM 800C on request LTCC-Module Maximum Ratings Parameter Symbol Value Unit Positive supply voltage VCC t.b.d. V Supply current IC t.b.d. A Channel temperature TCh 150 C Storage temperature Tstg - 55 ... + 150 C Pulse peak power dissipation PPulse t.b.d. W Total power dissipation (TS 80 C) TS: Temperature at soldering point Ptot t.b.d. W Parameter Symbol Value Unit Channel-soldering point RthChS t.b.d. K/W Thermal Resistance Data Book 289 V1.0, 2001-01-01 GaAs Components CGM 800C Functional Block Diagram VREF When this voltage is 2.8 V, all circuits are in normal operation-mode. When VREF = low, all circuits are shut off. VMODE A digital CMOS-signal is used to set the PA quiescent current in high mode (VMODE = 0 V, IQ = 150 mA) and in low mode (VMODE = 3 V, IQ = 60 mA). High mode should be used for best linearity in CDMA operation at high output power levels. Low mode should be used for best efficiency in AMPS and low power CDMA operation. VCC VMODE VREF VCC Control Circuit RF IN I/P Match I/S Match O/P Match RF OUT EHT09193 Figure 1 Functional Block Diagram Pin Configuration Pin No. Symbol 1 VCC 2 RF IN 3 VREF 4 VMODE 5 VCC 6 RF OUT 7 GND Data Book 290 V1.0, 2001-01-01 GaAs Components CGM 800C Electrical Characteristics TA = 25 C, ZS = ZL = 50 , VCC = 3.7 V, VREF = 2.8 V, VMODE 0.5 V; unless otherwise specified Parameter Symbol Limit Values min. typ. max. Unit Test Conditions MHz - Overall Operating frequency range f 824 - 849 Receive band noise power Prx - - - 136 dBm/ 869 MHz < f < 894 MHz Hz Stability (All spurious below - 70 dBc) VSWR - - - - 5 20 - In band Out of band Harmonics H2, H3 - ... - - 30 dBc POUT < 32 dBm AMPS output power POUT 32 - - dBm POUT = 32 dBm, VCC = 3.2 V Gain G - 26 - dB POUT = 32 dBm, VCC = 3.2 V Efficiency PAE - 50 - % POUT = 32 dBm, VCC = 3.2 V CDMA output power POUT 30 - - dBm - Gain G - - 28 20 - - dB PStep < POUT 30 dBm POUT PStep Maximum linear output power in low mode operation PStep - 16 - dBm - dBc POUT 29 dBm, VCC = 3.2 V/ POUT 30 dBm, VCC = 3.7 V Analog Mode AMPS Digital Mode CDMA Adj. channel power rejection Offset = 885 kHz Offset = 1.98 MHz Data Book ACPR ALPR 44 56 - - - - 291 V1.0, 2001-01-01 GaAs Components CGM 800C Electrical Characteristics (cont'd) TA = 25 C, ZS = ZL = 50 , VCC = 3.7 V, VREF = 2.8 V, VMODE 0.5 V; unless otherwise specified Parameter Symbol Limit Values Unit Test Conditions min. typ. max. PAE - - 35 7 - - % POUT = 30 dBm, VCC = 3.7 V POUT = PStep, VCC = 3.7 V Power supply voltage VCC 3.2 3.7 4.1 V - Reference voltage VREF - 2.8 - V - Idle current IQ - - 150 60 - - mA mA VMODE = low VMode = high Turn On/Off time tON/ tOFF - - 6 s - Power down current IPD - - 10 A - Case operating temperature TCase - 30 - 110 C - Efficiency Power Supply Data Book 292 V1.0, 2001-01-01 GaAs Components CGM 800C Mechanical Dimensions (top view) 0.1 3 Pin 1 7 2 6 6 4.39 1.7 0.8 0.8 1.7 GND (heat sink) 4 5 0.1 3 0.6 6 Height of the module = 1.5 mm Figure 2 Data Book EHT09232 LTCC-Module (Low Temperature Cofired Ceramic) 293 V1.0, 2001-01-01 GaAs Module CGM 1900C Target Data Sheet * * * * * * HBT power amplifier module for 1900 MHz CDMA and TDMA portable cellular phones Integrated temperature compensated bias circuit Power down control CMOS-switchable high/low-power mode Input and output matched to 50 6 x 6 mm2 LTCC-Module ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (taped) Package CGM 1900C CGM 1900C on request LTCC-Module Maximum Ratings Parameter Symbol Value Unit Positive supply voltage VCC t.b.d. V Supply current IC t.b.d. A Channel temperature TCh 150 C Storage temperature Tstg - 55 ... + 150 C Pulse peak power dissipation PPulse t.b.d. W Total power dissipation (TS 80 C) TS: Temperature at soldering point Ptot t.b.d. W Parameter Symbol Value Unit Channel-soldering point RthChS t.b.d. K/W Thermal Resistance Data Book 294 V1.0, 2001-01-01 GaAs Components CGM 1900C Functional Block Diagram VREF When this voltage is 2.8 V, all circuits are in normal operation-mode. When VREF = low, all circuits are shut off. VMODE A digital CMOS-signal is used to set the PA quiescent current in high mode (VMODE = 0 V, IQ = 150 mA) and in low mode (VMODE = 3 V, IQ = 60 mA). High mode should be used for best linearity at high output power levels. Low mode should be used to increase efficiency at reduced output power levels. VC VMODE VPD1/D2 VC1 VC2 VC3 Control Circuit RF IN RF OUT EHT09194 Figure 1 Functional Block Diagram Pin Configuration Pin No. Symbol 1 VCC 2 RF IN 3 VREF 4 VMODE 5 VCC 6 RF OUT 7 GND Data Book 295 V1.0, 2001-01-01 GaAs Components CGM 1900C Electrical Characteristics TA = 25 C, ZS = ZL = 50 , VCC = 3.7 V, VREF = 2.8 V, VMODE 0.5 V; unless otherwise specified Parameter Symbol Limit Values Unit Test Conditions min. typ. max. 1850 - 1910 - - - 139 dBm/ f = 1930 MHz Hz Stability (All spurious below - 70 dBc) VSWR - - - - 5 10 - In band Out of band Harmonics H2, H3 - ... - - 30 dBc POUT < 29 dBm CDMA output power POUT 29 - - dBm - Gain G - - 28 20 - - dB Maximum linear output power in low mode operation PStep - 16 - dBm - Overall Operating frequency range f Receive band noise Prx power MHz - Digital Mode CDMA Adj. channel power rejection Offset = 1.25 MHz ACPR Offset = 2.25 MHz ALPR Efficiency Data Book PAE 44 56 - - - - - - 35 7 - - 296 PStep < POUT 29 dBm, POUT PStep dBc POUT 28 dBm, VCC = 3.2 V/ POUT 29 dBm, VCC = 3.7 V % POUT = 29 dBm, VCC = 3.7 V POUT = PStep, VCC = 3.7 V V1.0, 2001-01-01 GaAs Components CGM 1900C Electrical Characteristics (cont'd) TA = 25 C, ZS = ZL = 50 , VCC = 3.7 V, VREF = 2.8 V, VMODE 0.5 V; unless otherwise specified Parameter Symbol Limit Values Unit Test Conditions min. typ. max. 29 - - dBm - Digital Mode TDMA TDMA output power POUT PStep < POUT 29 dBm, POUT PStep Gain G - - 28 20 - - dB Maximum linear output power in low mode operation PStep - 16 - dBm - dBc POUT 28 dBm, VCC = 3.2 V/ POUT 29 dBm, VCC = 3.7 V - - % POUT = 29 dBm, VCC = 3.7 V POUT = PStep, VCC = 3.7 V 3.7 4.1 V - - 2.8 - V - IQ - - 150 75 - - mA mA VMODE = low VMODE = high tON/ tOFF - - 6 s - - - 10 A - 110 C - Adj. channel power rejection Offset = 30 kHz Offset = 60 kHz ACPR ALPR 29 50 - - - - Efficiency PAE - - 35 7 Power supply voltage VCC 3.2 Reference voltage VREF Idle current Turn On/Off time Power Supply Power down current IPD Case operating temperature Data Book TCase - 30 - 297 V1.0, 2001-01-01 GaAs Components CGM 1900C Mechanical Dimensions (top view) 0.1 3 Pin 1 7 2 6 6 4.39 1.7 0.8 0.8 1.7 GND (heat sink) 4 5 0.1 3 0.6 6 Height of the module = 1.5 mm Figure 2 Data Book EHT09233 LTCC-Module (Low Temperature Cofired Ceramic) 298 V1.0, 2001-01-01 GaAs MMIC CGY 50 Data Sheet * Single-stage monolithic microwave IC (MMIC-amplifier) * Cascadable 50 gain block * Application range: 100 MHz to 3 GHz * IP3 30 dBm typ. @ 1.8 GHz * Gain 8.5 dB typ. @ 1.8 GHz * Low noise figure: 3.0 dB typ @ 1.8 GHz * Gain control dynamic range 20 dB ESD: Electrostatic discharge sensitive device, observe handling precautions! SOT-143 Type Marking Ordering Code (tape and reel) Package1) CGY 50 G2 Q68000-A8370 P-SOT143-4-1 1) Dimensions see Page 305. Maximum Ratings Parameter Symbol Value Unit Drain-voltage VD 5.5 V Peak drain-voltage VDP 7.5 V Current control gate voltage VG -3...0 V Drain-gate voltage VDG 7.5 V Input power1) PIN 16 dBm Channel temperature TCh 150 C Storage temperature range Tstg - 55 ... + 150 C Total power dissipation (TS 82 C)2) Ptot 400 mW 1) 2) See application circuit. TS is measured on the source 1 lead at the soldering point to the PCB. Data Book 299 V1.0, 2001-01-01 GaAs Components CGY 50 Thermal Resistance Parameter Symbol Value Unit Channel-soldering point1) RthChS < 170 K/W 1) TS is measured on the source 1 lead at the soldering point to the PCB. Note Exceeding any of the max. ratings may cause permanent damage to the device. Appropriate handling is required to protect the electrostatic sensitive MMIC against degradation due to excess current spikes. Proper ground connection of leads 1 and 3 (with minimum inductance) is required to achieve the guaranteed RF performance, stable operating conditions and adequate tuning. OUT/D 2 IN/G 4 4 k typ. 1, 3 S EHT08787 Figure 1 Data Book Circuit Diagram (Pin Configuration) 300 V1.0, 2001-01-01 GaAs Components CGY 50 Electrical Characteristics TA = 25 C, VG = 0 V, VD = 4.5 V, RS = RL = 50 , unless otherwise specified. For application circuit see Page 302. Characteristics Symbol Drain current ID Power gain f = 200 MHz f = 1800 MHz G Limit Values min. typ. max. - 60 75 - 7.5 Gain flatness G f = 200 to 1000 MHz f = 800 to 1800 MHz 10.0 8.5 Unit Test Conditions mA - dB - dB - - - - - 0.4 1.1 - 2 Noise figure F - 3.0 4.0 dB f = 200 to 1800 MHz Input return loss RLIN 9.5 12 - dB f = 200 to 1800 MHz Output return loss RLOUT 9.5 12 - dB f = 200 to 1800 MHz 3rd intercept point Two tone intermodulation test IP3 29 31 - dBm f1 = 806 MHz, f2 = 810 MHz, P0 = 10 dBm (both carriers) 1 dB gain compression P1 dB - 16 - dBm f = 200 to 1800 MHz Gain control dynamic range G - 20 - dB f = 200 to 1800 MHz Data Book 301 V1.0, 2001-01-01 GaAs Components CGY 50 D1 VG VD C3 C4 L1 C1 Input 50 L2 CGY 50 3 4 2 C2 Output 50 1 50 Microstripline Figure 2 EHT08788 Application Circuit (f = 800 ... 1800 MHz) Legend of Components C1, C2 C3, C4 Chip capacitors 100 pF Chip capacitors 1 nF L1 , L2 Discrete inductor 1 mH or printed microstrip inductor D1 Z diode 5.6 V (type BZW 22 C5 V 6) Note Operating conditions for PIN, max: RG = RL = 50 , C1, max = 220 pF, VD = 4.5 V, VG current limited < 2 mA. Data Book 302 V1.0, 2001-01-01 GaAs Components CGY 50 Total Power Dissipation Ptot = f (TS; TA) EHT08789 500 Ptot mW 400 TA TS 300 200 100 0 0 50 100 C 150 TA ; TS Data Book 303 V1.0, 2001-01-01 GaAs Components CGY 50 Typical Common Source S-Parameters VG = 0 V, VD = 4.5 V, Z0 = 50 S11 f S21 S12 S22 GHZ MAG ANG MAG ANG MAG ANG MAG ANG 0.2 0.25 - 31 3.30 164 0.14 5.0 0.05 - 144 0.4 0.27 - 34 3.20 158 0.14 0.0 0.05 - 133 0.6 0.21 - 44 3.17 150 0.13 - 2.0 0.08 105 0.8 0.20 - 54 3.09 142 0.13 - 3.0 0.10 91 1.0 0.19 - 65 3.00 134 0.13 - 4.0 0.12 81 1.2 0.18 - 77 2.90 126 0.13 - 5.0 0.14 74 1.4 0.18 - 93 2.81 118 0.13 - 5.0 0.16 68 1.6 0.17 - 103 2.70 111 0.13 - 6.0 0.17 62 1.8 0.17 - 119 2.60 103 0.13 - 5.0 0.18 56 2.0 0.17 - 130 2.50 96 0.12 - 5.0 0.19 51 2.2 0.18 - 141 2.42 94 0.12 - 4.0 0.20 46 2.4 0.18 - 152 2.33 83 0.12 - 4.0 0.21 42 2.6 0.19 - 163 2.24 77 0.12 - 3.0 0.21 39 2.8 0.20 - 172 2.16 71 0.13 - 3.0 0.21 36 3.0 0.21 179 2.07 65 0.13 - 2.0 0.21 33 3.2 0.22 172 2.01 60 0.13 - 2.0 0.21 30 3.4 0.23 162 1.94 54 0.13 - 2.0 0.21 29 3.6 0.24 153 1.87 49 0.14 - 1.0 0.21 28 3.8 0.26 148 1.81 43 0.14 - 1.0 0.21 27 4.0 0.28 142 1.75 38 0.15 - 1.0 0.20 27 Data Book 304 V1.0, 2001-01-01 GaAs Components CGY 50 Package Outlines P-SOT143-4-1 (Small Outline Transistor) 1.1 max 2.9 0.1 1.9 0.1 max 0.3 0.1 +0.1 0.8 -0.05 +0.2 acc. to DIN 6784 3 1 2 10 max 1.3 0.1 4 2.6 max 10 max 0.7 0.2 A 0.55 -0.1 0.4 +0.1 -0.05 0.08...0.15 1.7 0.25 M 2... 30 B 0.20 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Book 305 M A GPS05559 B Dimensions in mm V1.0, 2001-01-01 GaAs MMIC CGY 59W Data Sheet * Low noise preamplifier for mobile communication (PCN, DECT, GSM) in 2.7 V to 6 V systems * Biased monolithic microwave IC (MMIC) * Easily matchable to 50 * No bias coil needed * Single positive supply voltage * Low noise figure and high gain NF = 1.3 dB, G = 16.5 dB @ 3 V, 950 MHz (typ.) NF = 1.7 dB, G = 12 dB @ 3 V, 1.85 GHz (typ.) * Low power consumption * Frequency range 200 MHz ... 2.5 GHz * Miniature package P-SOT363-6-1 ESD: Electrostatic discharge sensitive device, observe handling precautions! SOT 363 Type Marking Ordering Code (taped) Package CGY 59W Y5s Q62702 - G69 P-SOT363-6-1 Maximum Ratings Parameter Symbol Value Unit Drain voltage VD 8 V Channel temperature TCh 150 C Storage temperature range Tstg - 55 ... + 150 C Total power dissipation (TS t.b.d. C)1) Ptot 80 mW 1) Please care for sufficient heat dissipation on the pcb! Data Book 306 V1.0, 2001-01-01 GaAs Components CGY 59W Thermal Resistance Parameter Symbol Value Unit Channel-soldering point (GND) RthChS t.b.d. K/W Junction-ambient1) RthJA < t.b.d. K/W 1) Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm. Electrical Characteristics of CGY 59W in 1850 MHz Application Circuit TA = 25 C, f = 1850 MHz, RS = RL = 50 , unless otherwise specified Characteristics Symbol Drain current ID Power Gain VD = 3 V VD = 5 V G Noise figure VD = 3 V VD = 5 V F Input return loss VD = 3 V VD = 5 V RLIN Output return loss VD = 3 V VD = 5 V RLOUT Third order input intercept point two-tone intermodulation test f1 = 1850 MHz, f2 = 1851 MHz PIN = - 20 dBm (both carriers) VD = 3 V VD = 5 V IP3 Input power at 1 dB gain compression VD = 3 V VD = 5 V P- 1 dB Data Book Limit Values min. typ. max. - 6 - mA dB - - 12 13 - - dB - - 1.70 1.65 - - dB - - 12 12 - - dB - - 13 13 - - dBm - - 1 2 - - dBm - - 307 Unit -8 -6 - - V1.0, 2001-01-01 GaAs Components CGY 59W Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device Top View 6 5 4 W1s Position in tape: pin 1 opposite of feed hole side 1 2 3 Direction of Unreeling EHA07193 Figure 1 100 pF 1 nF VD Input 50 15 pF CGY 59 3 5 6.8 nH 6 4 15 pF Output 50 1 2 100 pF EHT08793 Figure 2 Data Book 1850 MHz Application (PCN, DECT) 308 V1.0, 2001-01-01 GaAs Components CGY 59W VD 1 nF VD 100 pF 6.8 nH 15 pF 15 pF OUT IN OUT 100 pF CGY 59 SOT 363 IN EHT08795 Actual size (20 x 20 mm) CGY 59 SOT 363 EHT08794 Figure 3 PCB - Layouts for Application Circuits 1850 MHz PCN -, DECT - application board PCB - data: Glass fiber teflon board (double sided) TACONIC TLX-9-0150-CH/CH, r = 2.45, thickness = 0.4 mm Data Book 309 V1.0, 2001-01-01 GaAs Components CGY 59W Typical S- and Noise-Parameters VD = 3 V, Z0 = 50 S11 f S21 S12 S22 GHZ MAG ANG MAG ANG MAG ANG MAG ANG 0.1 0.999 -4 4.30 - 177 0.006 - 75 0.261 - 17 0.2 0.998 - 6.6 4.32 - 173 0.011 97.6 0.251 - 10 0.3 0.997 - 10 4.30 - 167 0.010 94 0.247 - 11 0.4 0.982 - 14 4.26 161 0.016 76 0.238 - 12 0.5 0.970 - 18 4.24 156 0.019 78 0.232 - 13 0.6 0.958 - 21 4.16 151 0.020 78 0.226 - 15 0.7 0.940 - 24 4.13 146 0.023 73 0.221 - 16 0.8 0.918 - 27 4.02 141 0.026 79 0.218 - 18 0.9 0.889 - 32 3.91 136 0.031 79 0.209 - 22 1.0 0.870 - 34 3.82 132 0.033 76 0.195 - 21 1.1 0.845 - 37 3.76 128 0.036 75 0.189 - 23 1.2 0.829 - 39 3.63 123 0.039 73 0.186 - 24 1.3 0.806 - 42 3.58 119 0.041 72 0.177 - 24 1.4 0.789 - 45 3.47 115 0.043 71 0.173 - 24 1.5 0.765 - 47 3.39 111 0.046 71 0.166 - 24 1.6 0.748 - 50 3.29 107 0.046 72 0.159 - 24 1.7 0.725 - 52 3.21 104 0.051 71 0.154 - 22 1.8 0.703 - 54 3.14 100 0.051 71 0.147 - 21 1.9 0.695 - 56 3.08 97 0.055 69 0.140 - 18 2.0 0.664 - 58 2.98 93 0.056 71 0.135 - 15 2.1 0.644 - 59 2.86 90 0.059 70 0.129 - 13 2.2 0.631 - 61 2.83 86 0.062 69 0.123 - 9.6 2.3 0.605 - 63 2.79 83 0.063 69 0.114 - 3.4 2.4 0.590 - 65 2.70 80 0.064 69 0.109 2.7 2.5 0.570 - 67 2.65 76 0.065 70 0.106 9.2 Data Book 310 V1.0, 2001-01-01 GaAs Components CGY 59W f opt Fmin MAG ANG RN GHz dB - deg 0.8 1.15 0.77 19 59.7 1.0 1.19 0.74 22 56.4 1.2 1.24 0.72 27 54.0 1.4 1.31 0.71 32 51.8 1.6 1.39 0.70 36 49.6 1.8 1.49 0.68 39 47.3 2.0 1.62 0.66 43 43.9 S- and noise-parameters are also available on CD-ROM. Typical S- and Noise-Parameters VD = 5 V, Z0 = 50 S11 f S21 S12 S22 GHZ MAG ANG MAG ANG MAG ANG MAG ANG 0.1 0.998 - 3.4 4.99 - 177 0.007 - 73 0.366 - 15 0.2 0.997 - 6.8 4.97 - 173 0.008 30 0.331 - 8.8 0.3 0.995 - 10 4.99 - 167 0.012 96 0.328 - 9.2 0.4 0.976 - 14 4.98 161 0.012 82 0.316 - 11 0.5 0.963 - 17 4.91 156 0.014 89 0.318 - 12 0.6 0.957 - 21 4.81 151 0.020 77 0.306 - 14 0.7 0.942 - 24 4.76 146 0.022 83 0.302 - 16 0.8 0.920 - 27 4.63 141 0.027 79 0.297 - 17 0.9 0.887 - 31 4.50 136 0.031 79 0.289 - 21 1.0 0.871 - 33 4.40 132 0.033 75 0.276 - 21 1.1 0.846 - 36 4.31 128 0.035 75 0.269 - 22 1.2 0.826 - 39 4.16 123 0.037 75 0.263 - 22 1.3 0.807 - 41 4.12 119 0.039 70 0.256 - 24 1.4 0.788 - 44 4.01 116 0.042 73 0.246 - 24 Data Book 311 V1.0, 2001-01-01 GaAs Components CGY 59W Typical S- and Noise-Parameters (cont'd) VD = 5 V, Z0 = 50 S11 f S21 S12 S22 GHZ MAG ANG MAG ANG MAG ANG MAG ANG 1.5 0.762 - 46 3.91 112 0.043 72 0.240 - 24 1.6 0.744 - 49 3.77 108 0.047 71 0.234 - 25 1.7 0.723 - 51 3.69 105 0.048 71 0.229 - 24 1.8 0.703 - 53 3.60 101 0.051 70 0.221 - 23 1.9 0.687 - 55 3.50 98 0.052 71 0.215 - 22 2.0 0.665 - 57 3.42 94 0.054 72 0.208 - 21 2.1 0.647 - 58 3.28 91 0.057 72 0.203 - 20 2.2 0.636 - 60 3.25 88 0.058 70 0.193 - 59 2.3 0.611 - 62 3.20 84 0.060 69 0.184 - 17 2.4 0.595 - 63 3.14 82 0.062 70 0.176 - 14 2.5 0.573 - 66 3.06 78 0.063 71 0.172 - 11 f Fmin opt MAG ANG RN GHz dB - deg 0.8 1.13 0.76 18 58.5 1.0 1.16 0.74 21 56.3 1.2 1.21 0.73 27 52.7 1.4 1.26 0.72 30 49.1 1.6 1.33 0.70 34 48.5 1.8 1.42 0.68 38 45.2 2.0 1.55 0.66 42 43.4 S- and noise-parameters are also available on CD-ROM. Data Book 312 V1.0, 2001-01-01 GaAs Components CGY 59W VD 1 nF 100 pF CGY 59 3 5 6 Input 1) Reference Plane 4 1 2 Output 1) Reference Plane 100 pF 50 Microstripline Figure 4 1) EHT08796 Application Circuit for Measuring S-Parameters f = 200 MHz to 2.5 GHz Caution! DC - decoupling capacitors are not integrated in device Data Book 313 V1.0, 2001-01-01 GaAs Components CGY 59W Package Outlines P-SOT363-6-1 (Small Outline Transistor) 2 0.2 0.9 0.1 B 0.2 +0.1 0.1 max 4 1 2 3 +0.2 acc. to DIN 6784 2.10.1 5 1.25 0.1 A 6 0.15 +0.1 -0.05 0.65 0.05 0.20 M B 0.20 M A GPS05604 1.3 0.1 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Book 314 Dimensions in mm V1.0, 2001-01-01 GaAs MMIC CGY 60 Data Sheet * Low noise preamplifier for mobile communication (PCN, DECT, GSM) in 2.7 V to 6 V systems * Biased monolithic microwave IC (MMIC) matched to 50 for 1.7 to 2 GHz * Easily matchable to 50 for lower frequencies (i.e. GSM-application) * No bias coil needed * Low noise figure and high gain (typ. NF = 1.9 dB, G = 12.5 dB @ 3 V, 1.85 GHz) * Low power consumption * Frequency range 200 MHz ... 2.5 GHz ESD: Electrostatic discharge sensitive device, observe handling precautions! MW-6 Type Marking Ordering Code (taped) Package1) CGY 60 Y7s Q62702-G39 MW-6 1) Dimensions see Page 324. Maximum Ratings Parameter Symbol Value Unit Drain voltage VD 8 V Channel temperature TCh 150 C Storage temperature range Tstg - 55 ... + 150 C Total power dissipation (TS 132 C)1) Ptot 80 mW 1) Please care for sufficient heat dissipation on the pcb! Thermal Resistance Parameter Symbol Value Unit Channel-soldering point (GND) RthChS 220 K/W Channel-ambient1) RthChA < 300 K/W 1) Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm. Data Book 315 V1.0, 2001-01-01 GaAs Components CGY 60 Electrical Characteristics of CGY 60 in GSM Application Circuit TA = 25 C, f = 950 MHz, RS = RL = 50 , unless otherwise specified. Characteristics Symbol Drain current ID Power Gain VD = 3 V VD = 5 V G Noise figure VD = 3 V VD = 5 V F Input return loss VD = 3 V VD = 5 V RLIN Output return loss VD = 3 V VD = 5 V RLOUT Third order input intercept point two-tone intermodulation test f1 = 950 MHz, f2 = 951 MHz PIN = - 20 dBm (both carriers) VD = 3 V VD = 5 V IP3 Input power at 1 dB gain compression VD = 3 V VD = 5 V P- 1 dB Data Book Limit Values Unit min. typ. max. - 6 9 mA dB - - 15.5 17 - - dB - - 1.35 1.30 - - dB - - 10 10 - - dB - - 11 11 - - dBm - - - - dBm - - 316 -3 -1 - 10 -8 - - V1.0, 2001-01-01 GaAs Components CGY 60 Electrical Characteristics in PCN-, DECT-Application Circuit TA = 25 C, f = 1850 MHz, RS = RL = 50 , unless otherwise specified. Characteristics Symbol Drain current ID Power Gain VD = 3 V VD = 5 V G Noise figure VD = 3 V VD = 5 V F Input return loss VD = 3 V VD = 5 V RLIN Output return loss VD = 3 V VD = 5 V RLOUT Third order input intercept point two-tone intermodulation test f1 = 1850 MHz, f2 = 1851 MHz PIN = - 20 dBm (both carriers) VD = 3 V VD = 5 V IP3 Input power at 1 dB gain compression VD = 3 V VD = 5 V P- 1 dB Data Book Limit Values Unit min. typ. max. - 6 9 mA dB - - 12.5 13.5 - - dB - - 1.90 1.85 - - dB - - 14.5 14.5 - - dB - - 14 14 - - dBm - - - - dBm - - 317 0 2 -7 -5 - - V1.0, 2001-01-01 GaAs Components CGY 60 VD 1 nF 100 pF 6 5 CGY 60 3 Input 50 1) 4 Output 50 1 2 100 pF 1) 50 Microstripline Figure 1 1) EHT08797 Application Circuit for Measuring S- and Noise-Parameters f = 200 MHz to 2 GHz Use 12 to 15 pF for DECT - or PCN - applications. 27 pF 1 nF l = 4.1 mm1) VD V l = 6.8 mm1) CGY 60 6 5 L Input 50 4 V 3 l = 5 mm1) Output 50 1 2 V Open Stub l = 4.1 mm1) V 27 pF 50 Microstripline 120 Microstripline L : Discrete inductor 15 nH, type SIMID01, Ord. No: B82412-A3150-M 1 V= reff Figure 2 Data Book EHT08798 900 MHz Application (GSM) 318 V1.0, 2001-01-01 GaAs Components CGY 60 PCB - Layouts for Application Circuits VD 1 nF 1 nF 15 pF 15 pF 15 pF VD 15 pF IN OUT IN OUT CGY 60 1800 MHz EHT08800 actual size (20 x 20 mm) CGY 60 1800 MHz EHT08799 Figure 3 PCN -, DECT - Application Board VD 1 nF 1 nF 27 pF 27 pF 27 pF VD 27 pF IN OUT 15 nH OUT IN CGY 60 900 MHz EHT08802 actual size ( 20 x 20 mm) CGY 60 900 MHz EHT08801 Figure 4 GSM - Application Board PCB - data: Glass fiber teflon board (double sided) TACONIC TLX-9-0150-CH/CH. r = 2.45, thickness = 0.4 mm Data Book 319 V1.0, 2001-01-01 GaAs Components CGY 60 Typical S- and Noise-Parameters VD = 3 V, Z0 = 50 S11 f S21 S12 S22 GHZ MAG ANG MAG ANG MAG ANG MAG ANG 0.1 0.97 -5 2.98 - 135 0.005 80 0.74 - 34 0.2 0.97 -9 3.85 - 162 0.009 77 0.51 - 44 0.3 0.96 - 14 4.13 - 177 0.013 74 0.41 - 47 0.4 0.94 - 19 4.27 172 0.017 73 0.35 - 48 0.5 0.93 - 23 4.35 163 0.021 71 0.33 - 49 0.6 0.91 - 29 4.40 155 0.026 67 0.31 - 51 0.7 0.88 - 34 4.45 148 0.029 65 0.30 - 54 0.8 0.85 - 40 4.48 140 0.033 63 0.29 - 58 0.9 0.81 - 46 4.51 132 0.037 60 0.29 - 63 1.0 0.76 - 52 4.55 125 0.042 54 0.28 - 69 1.1 0.71 - 59 4.60 117 0.045 50 0.27 - 74 1.2 0.64 - 66 4.62 110 0.048 46 0.26 - 80 1.3 0.58 - 74 4.63 102 0.051 41 0.26 - 86 1.4 0.51 - 83 4.61 94 0.053 36 0.25 - 93 1.5 0.43 - 93 4.58 85 0.054 31 0.24 - 101 1.6 0.34 - 106 4.51 77 0.055 26 0.23 - 109 1.7 0.26 - 122 4.40 69 0.055 20 0.22 - 118 1.8 0.19 - 149 4.30 60 0.054 15 0.21 - 128 1.9 0.15 172 4.13 51 0.051 11 0.20 - 140 2.0 0.18 131 3.94 43 0.049 5 0.19 - 151 2.1 0.24 106 3.73 35 0.046 2.5 0.18 - 163 2.2 0.32 90 3.56 27 0.043 -5 0.18 177 2.3 0.39 78 3.33 20 0.038 -9 0.18 170 2.4 0.46 69 3.09 13 0.033 - 11 0.18 160 2.5 0.52 61 2.87 5 0.028 - 12 0.19 151 Data Book 320 V1.0, 2001-01-01 GaAs Components CGY 60 f opt Fmin RN MAG ANG GHz dB - deg 0.9 1.27 0.70 27 47.8 1.3 1.35 0.63 39 32.7 1.8 1.50 0.42 59 18.2 2.0 1.60 0.30 62 15.0 Typical S- and Noise-Parameters VD = 3 V, Z0 = 50 S11 f S21 S12 S22 GHZ MAG ANG MAG ANG MAG ANG MAG ANG 0.1 0.97 -4 3.58 - 137 0.005 74 0.72 - 31 0.2 0.97 -9 4.49 - 164 0.009 75 0.52 - 37 0.3 0.96 - 14 4.78 - 178 0.013 74 0.44 - 38 0.4 0.94 - 18 4.91 171 0.017 71 0.39 - 39 0.5 0.93 - 23 4.96 163 0.021 70 0.37 - 40 0.6 0.90 - 28 5.02 154 0.024 67 0.36 - 42 0.7 0.88 - 34 5.09 147 0.028 64 0.35 - 45 0.8 0.85 - 39 5.11 139 0.032 62 0.34 - 50 0.9 0.81 - 45 5.14 132 0.036 60 0.34 - 54 1.0 0.76 - 51 5.16 125 0.041 55 0.33 - 59 1.1 0.71 - 58 5.23 118 0.044 50 0.32 - 64 1.2 0.65 - 65 5.25 110 0.046 45 0.31 - 70 1.3 0.59 - 72 5.25 102 0.049 42 0.30 - 75 1.4 0.52 - 81 5.25 95 0.050 37 0.29 - 81 1.5 0.44 - 90 5.21 87 0.052 32 0.27 - 88 1.6 0.36 - 103 5.15 78 0.052 27 0.26 - 95 1.7 0.28 - 118 5.05 70 0.052 23 0.24 - 102 Data Book 321 V1.0, 2001-01-01 GaAs Components CGY 60 Typical S- and Noise-Parameters (cont'd) VD = 3 V, Z0 = 50 S11 f S21 S12 S22 GHZ MAG ANG MAG ANG MAG ANG MAG ANG 1.8 0.20 - 140 4.93 62 0.051 17 0.22 - 111 1.9 0.16 - 176 4.77 53 0.050 13 0.20 - 121 2.0 0.17 141 4.57 45 0.047 8 0.18 - 131 2.1 0.23 113 4.36 37 0.045 5 0.17 - 142 2.2 0.31 95 4.18 29 0.042 -2 0.16 - 158 2.3 0.38 82 3.92 21 0.037 -6 0.14 - 173 2.4 0.45 72 3.66 14 0.032 -8 0.14 174 2.5 0.52 64 3.39 7 0.027 -9 0.14 162 f opt Fmin MAG ANG RN GHz dB - deg 0.9 1.23 0.69 26 47.7 1.3 1.32 0.67 39 33.3 1.8 1.45 0.45 55 18.6 2.0 1.53 0.32 60 15.2 Data Book 322 V1.0, 2001-01-01 GaAs Components CGY 60 Package Parameters Dim. min. nom. max. Gradient Remark A - - 1.1 - - A1 - - 0.1 - - A2 - - 1.0 - - b - 0.3 - - - b1 - 0.6 - - - c 0.08 - 0.15 - - D 2.8 - 3.0 - - E 1.2 - 1.4 - - |e| - 0.95 - - - |e1| - 1.9 - - - HE - - 2.6 - - LE - - 0.6 - - a - - - max 10 1) q - - - 2 ... 30 - 1) Applicable on all case top sides. Data Book 323 V1.0, 2001-01-01 GaAs Components CGY 60 Package Outlines MW-6 (Special Package) 1.1 max 2.9 0.1 B 0.6 +0.1 -0.05 5 4 1 2 3 +0.2 acc. to DIN 6784 10max 1.3 0.1 0.3 +0.1 -0.05 6 2.6 max 10max A 0.1 max 0.08...0.15 1.9 M 2... 30 B 0.20 M A GPW05794 0.25 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Book 324 Dimensions in mm V1.0, 2001-01-01 GaAs MMIC CGY 62 Data Sheet * * * * * Two-stage microwave broadband amplifier IC 50 input/output Operating voltage range: 2.7 to 5 V High gain and output power (typ.: G = 20 dB, P- 1 dB = 17.5 dBm @ 4.5 V, 1 GHz) Frequency range 200 MHz ... 2.5 GHz MW-6 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (taped) Package1) CGY 62 Y6s Q68000-A8797 MW-6 1) Dimensions see Page 331. Maximum Ratings Parameter Symbol Value Unit Drain voltage VD 6 V Channel temperature TCh 150 C Storage temperature range Tstg - 55 ... + 150 C Total power dissipation (TS 70 C)1) Ptot 800 1) mW Please care for sufficient heat dissipation on the pcb! Thermal Resistance Parameter Symbol Value Unit Channel-soldering point (GND) RthChS 100 K/W Junction-ambient1) RthJA < 180 K/W 1) Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm. Data Book 325 V1.0, 2001-01-01 GaAs Components CGY 62 Electrical Characteristics TA = 25 C, VD = 4.5 V, RS = RL = 50 , unless otherwise specified. Characteristics Symbol Drain current ID Power Gain f = 200 MHz to 1800 MHz f = 2500 MHz G Gain flatness f = 200 MHz to 1800 MHz Limit Values Unit min. typ. max. - 130 175 mA dB 18 - 19 15 - - G - 2 3.5 dB Noise figure f = 200 MHz to 1800 MHz F - 3.5 4.0 dB Input return loss f = 200 MHz to 500 MHz f = 500 MHz to 2500 MHz RLIN Output return loss f = 200 MHz to 2500 MHz dB - 10 8 15 - - RLOUT 10 13 - dB Third order intercept point two-tone intermodulation test f1 = 806 MHz, f2 = 810 MHz PO = - 10 dBm (both carriers) IP3 - 30 - dBm Output power at 1 dB gain compression f = 200 MHz to 1800 MHz P- 1 dB - 17.5 - dBm Data Book 326 V1.0, 2001-01-01 GaAs Components CGY 62 Electrical Characteristics at TA = 25 C, VD = 4.5 V, RS = RL = 50 , unless otherwise specified. Noise Figure F = f(f) Power Gain G = f(f) VS = 4.5 V VS = 4.5 V EHT08803 5 EHT08804 24 G dB F dB typ. 20 4 typ. 16 3 12 2 8 1 0 0.1 4 0.6 1.1 1.6 0 0.1 GHz 2.6 f Data Book 0.6 1.1 1.6 GHz 2.6 f 327 V1.0, 2001-01-01 GaAs Components CGY 62 Typical S-Parameters VD = 4.5 V, VG = 0 V, Z0 = 50 S11 f S21 S12 S22 GHZ MAG ANG MAG ANG MAG ANG MAG ANG 0.1 0.81 - 42 6.64 48 0.006 107.0 0.29 - 19 0.3 0.41 - 84 10.06 4 0.010 40.0 0.21 - 31 0.5 0.28 - 105 10.75 - 19 0.011 30.0 0.18 - 34 0.7 0.21 - 118 10.82 - 38 0.011 31.0 0.17 - 32 0.9 0.17 - 124 10.66 - 54 0.012 30.0 0.17 - 32 1.1 0.13 - 128 10.37 - 71 0.013 31.0 0.17 - 29 1.3 0.11 - 129 9.95 - 86 0.013 33.0 0.16 - 24 1.5 0.08 - 131 9.41 - 101 0.014 33.0 0.16 - 17 1.7 0.06 - 134 8.80 - 116 0.015 34.0 0.17 -9 1.9 0.04 - 141 8.10 - 130 0.015 33.0 0.19 -2 2.1 0.03 - 141 7.29 - 143 0.015 39.0 0.20 -3 2.3 0.05 - 172 6.61 - 155 0.016 42.0 0.20 0 2.5 0.07 163 6.04 - 166 0.018 44.0 0.19 3 2.7 0.09 152 5.46 - 178 0.019 44.0 0.19 4 2.9 0.11 149 4.92 172 0.021 45.0 0.18 4 3.1 0.14 149 4.45 161 0.022 45.0 0.17 1 3.3 0.16 150 4.00 152 0.024 45.0 0.16 -4 3.5 0.18 150 3.61 142 0.026 44.0 0.15 - 10 3.7 0.18 151 3.21 132 0.027 44.0 0.16 - 17 3.9 0.19 156 2.84 126 0.028 43.0 0.17 - 29 Data Book 328 V1.0, 2001-01-01 GaAs Components CGY 62 Application Circuit f = 800 MHz to 1800 MHz 1 nF VS 27 nH 39 nH Interstage CGY 62 3 100 pF Input 50 4 IN 1 OUT 100 pF Output 50 2, 5, 6 EHT08805 Figure 1 50 Microstripline Pin Assignment Pin 1 Pin 2 Pin 3 Pin 4 Pin 5 Pin 6 OUT GND Interstage IN GND GND Data Book 329 V1.0, 2001-01-01 GaAs Components CGY 62 Package Parameters Dim. min. nom. max. Gradient Remark A - - 1.1 - - A1 - - 0.1 - - A2 - - 1.0 - - b - 0.3 - - - b1 - 0.6 - - - c 0.08 - 0.15 - - D 2.8 - 3.0 - - E 1.2 - 1.4 - - |e| - 0.95 - - - |e1| - 1.9 - - - HE - - 2.6 - - LE - - 0.6 - - a - - - max 10 1) q - - - 2 ... 30 - 1) Applicable on all case top sides. Data Book 330 V1.0, 2001-01-01 GaAs Components CGY 62 Package Outlines MW-6 (Special Package) 1.1 max 2.9 0.1 B 0.6 +0.1 -0.05 5 4 1 2 3 +0.2 acc. to DIN 6784 10max 1.3 0.1 0.3 +0.1 -0.05 6 2.6 max 10max A 0.1 max 0.08...0.15 1.9 M 2... 30 B 0.20 M A GPW05794 0.25 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Book 331 Dimensions in mm V1.0, 2001-01-01 GaAs MMIC CGY 63 Preliminary Data Sheet * Broadband Driver Amplifier (800 ... 2500 MHz) * Bluetooth, ISM450, ISM900, ISM2400 * Base Station Driver Amplifier * Single Voltage Supply: 2.7 to 6 V * POUT = 20.0 dBm at VD = 3.2 V (CW) * POUT = 22.0 dBm at VD = 5.0 V (CW) * Easy external matching ESD: Electrostatic discharge sensitive device, observe handling precautions! Type CGY 63 Marking Y8s Ordering Code (taped) Q62702-G0115 SCT 595 Pin Configuration 1 2 3 VD2 GND VG Package 4 5 VD1 GND SCT-595 Maximum Ratings Parameter Symbol max. Value Unit Positive supply voltage VD 7 V Supply current ID 0.3 A Maximum input power PIN, max 15 dBm Channel temperature TCh 150 C Storage temperature Tstg - 55 ... + 150 C Total power dissipation (TS 81 C) TS: Temperature at soldering point Ptot 0.6 W Pulse peak power PPulse 1.0 W Parameter Symbol Value Unit Channel-soldering point RthChS 120 K/W Thermal Resistance Data Book 332 V1.0, 2001-01-01 GaAs Components CGY 63 VD1 4 RF IN / VG 3 1 2, 5 GND Figure 1 RF OUT / VD2 2, 5 GND EHT09207 Functional Block Diagram Pin Configuration Pin No. Symbol Configuration 1 RF OUT/VD2 RF output power/Pos. drain voltage of the 2nd stage 2 GND RF and DC ground 3 RF IN/VG RF input power + Gate voltage (0 V internal) 4 VD1 Pos. drain voltage of the 1st stage 5 GND RF and DC ground DC Characteristics Characteristics Drain current Symbol Unit Test Conditions min. typ. max. stage 1 IDSS1 stage 2 - 25 - mA VD1 = 3 V IDSS2 - 75 - mA VD2 = 3 V GFS1 - 50 - mS VD = 3 V, ID = 25 mA GFS2 - 150 - mS VD = 3 V, ID = 75 mA VP - - 1.1 - V VD = 3 V, ID < 50 A Transconductance Pinch off voltage Limit Values (all stages) Data Book 333 V1.0, 2001-01-01 GaAs Components CGY 63 Electrical Characteristics Broadband Application (f = 0.8 ... 2.4 GHz) TA = 25 C, f = 0.8 ... 2.5 GHz, ZS = ZL = 50 , unless otherwise specified. Characteristics Symbol Limit Values min. typ. max. Unit Test Conditions Supply current IDD - 90 - mA VD = 3.2 V, PIN = + 3 dBm Supply current IDD - 100 - mA VD = 3.2 V, PIN = - 10 dBm Gain G - 20 - dB VD = 3.2 V, PIN = - 10 dBm - 19 - dBm VD = 3.2 V Output power at 1 dB gain P- 1 dB compression Output Power PO - 20 - dBm VD = 3.2 V, PIN = + 3 dBm 3rd order intercept point two-tone intermodulation test IP3 - 29 - dBm VD = 3.2 V, f1 = 1406 MHz, f2 = 1410 MHz PO = - 10 dBm (both carriers) Overall Power added Efficiency PAE - 25 - % VD = 3.2 V, POUT = P- 1 dB Gain Flatness G - 2 - dB VD = 3.2 V, PIN = - 10 dBm 0.8 ... 1.9 GHz Gain Flatness G - 1 - dB VD = 3.2 V, PIN = 0 dBm 0.8 ... 1.9 GHz Noise figure F - 3.0 - dB VD = 3.2 V Supply current IDD - 95 - mA VD = 5.0 V, PIN = 6 dBm Supply current IDD - 100 - mA VD = 5.0 V, PIN = - 10 dBm Gain G - 20 - dB VD = 5.0 V, PIN = - 10 dBm Data Book 334 V1.0, 2001-01-01 GaAs Components CGY 63 Electrical Characteristics Broadband Application (f = 0.8 ... 2.4 GHz) (cont'd) TA = 25 C, f = 0.8 ... 2.5 GHz, ZS = ZL = 50 , unless otherwise specified. Characteristics Symbol Limit Values Unit Test Conditions min. typ. max. - 22 - dBm VD = 5.0 V, PIN = 6 dBm Output power at 1 dB gain P- 1 dB compression - 21 - dBm VD = 5.0 V 3rd order intercept point two-tone intermodulation test IP3 - 31 - dBm VD = 5.0 V f1 = 1406 MHz, f2 = 1410 MHz PO = - 10 dBm (both carriers) Gain Flatness G - 2 - dB PO Output Power VD = 5.0 V, PIN = - 10 dBm 0.8 ... 1.9 GHz G Gain Flatness - 1 - dB VD = 5.0 V, PIN = 3 dBm 0.8 ... 1.9 GHz Overall Power added Efficiency PAE - 25 - % VD = 5.0 V, PIN = POUT = P- 1 dB Noise figure F - 3.0 - dB VD = 5.0 V Off Isolation -S21 - 35 - dB VD = 0 V, PIN = 3 dBm Harmonics 2 f0 3 f0 - - - - t.b.m. t.b.m. - - dBc PIN = + 3 dBm, VD = 3.0 V Harmonics 2 f0 3 f0 - - - - t.b.m. t.b.m. - - dBc PIN = + 6 dBm, VD = 5.0 V - - 2:1 - - VD = 3.2 V or VD = 5.0 V Input/Output VSWR Data Book 335 V1.0, 2001-01-01 GaAs Components CGY 63 Electrical Characteristics Broadband Application (f = 0.8 ... 2.4 GHz) (cont'd) TA = 25 C, f = 0.8 ... 2.5 GHz, ZS = ZL = 50 , unless otherwise specified. Characteristics Symbol Limit Values min. typ. max. Unit Test Conditions Load mismatch - Load VSWR = 20:1 for all phase No module damage for - 10 s PIN = 3 dBm, VD 3.0 V, ZS = 50 Load mismatch - Load VSWR = 20:1 for all phase No module damage for - 10 s PIN = 6 dBm, VD 5 V, ZS = 50 Stability - Load VSWR = 10:1 for all phase All spurious output - more than 70 dB below desired signal level PIN = 3 dBm, VD = 3.2 V, ZS = 50 Stability - Load VSWR = 10:1 for all phase All spurious output - more than 70 dB below desired signal level PIN = 5 dBm, VD = 5.0 V, ZS = 50 Data Book 336 V1.0, 2001-01-01 GaAs Components CGY 63 Ansoft Corporation - Microwave Harmonica (tm) v7.5 02/08/00 15:29:30 mess Y1 dB(S11(ckt=mess)) 25.00 25.00 20.00 23.00 15.00 21.00 10.00 19.00 5.00 17.00 0.00 Y2 Y1 C:\SPAR_ku.CKT Y1 mess dB(S22(ckt=mess)) mess Y2 dB(S21(ckt=mess)) 15.00 -5.00 13.00 -10.00 11.00 -15.00 9.00 -20.00 7.00 -25.00 5.00 0.10 0.50 0.90 1.30 1.70 2.10 2.50 2.90 3.30 3.70 4.10 FREQ [GHz] EHT09243 Figure 2 Broadband Application (f = 0.8 ... 2.4 GHz), S-Parameter, VD = 3.2 V, PIN = - 10 dBm Ansoft Corporation - Microwave Harmonica (tm) v7.5 02/08/00 15:32:15 Y1 mess dB(S11(ckt=mess)) 25.00 25.00 20.00 23.00 15.00 21.00 10.00 19.00 5.00 17.00 0.00 Y2 Y1 C:\SPAR_ku.CKT Y1 mess dB(S22(ckt=mess)) mess Y2 dB(S21(ckt=mess)) 15.00 -5.00 13.00 -10.00 11.00 -15.00 9.00 -20.00 7.00 -25.00 5.00 0.10 0.50 0.90 1.30 1.70 2.10 2.50 2.90 3.30 3.70 4.10 FREQ [GHz] EHT09244 Figure 3 Data Book Broadband Application (f = 0.8 ... 2.4 GHz), S-Parameter, VD = 3.2 V, PIN = 0 dBm 337 V1.0, 2001-01-01 GaAs Components CGY 63 Ansoft Corporation - Microwave Harmonica (tm) v7.5 02/08/00 15:33:32 Y1 mess dB(S11(ckt=mess)) 25.00 25.00 20.00 23.00 15.00 21.00 10.00 19.00 5.00 17.00 0.00 Y2 Y1 C:\SPAR_ku.CKT Y1 mess dB(S22(ckt=mess)) mess Y2 dB(S21(ckt=mess)) 15.00 -5.00 13.00 -10.00 11.00 -15.00 9.00 -20.00 7.00 -25.00 5.00 0.10 0.50 0.90 1.30 1.70 2.10 2.50 2.90 3.30 3.70 4.10 FREQ [GHz] EHT09262 Figure 4 Broadband Application (f = 0.8 ... 2.4 GHz), S-Parameter, VD = 3.2 V, PIN = 3 dBm Ansoft Corporation - Microwave Harmonica (tm) v7.5 02/08/00 15:36:02 Y1 mess dB(S11(ckt=mess)) 25.00 25.00 20.00 23.00 15.00 21.00 10.00 19.00 5.00 17.00 0.00 Y2 Y1 C:\SPAR_ku.CKT Y1 mess dB(S22(ckt=mess)) mess Y2 dB(S21(ckt=mess)) 15.00 -5.00 13.00 -10.00 11.00 -15.00 9.00 -20.00 7.00 -25.00 5.00 0.10 0.50 0.90 1.30 1.70 2.10 2.50 2.90 3.30 3.70 4.10 FREQ [GHz] EHT09263 Figure 5 Data Book Broadband Application (f = 0.8 ... 2.4 GHz), S-Parameter, VD = 3.2 V, PIN = 5 dBm 338 V1.0, 2001-01-01 GaAs Components CGY 63 Ansoft Corporation - Microwave Harmonica (tm) v7.5 02/08/00 16:13:46 Y1 mess dB(S11(ckt=mess)) 25.00 25.00 20.00 23.00 15.00 21.00 10.00 19.00 5.00 17.00 0.00 Y2 Y1 C:\SPAR_ku.CKT Y1 mess dB(S22(ckt=mess)) mess Y2 dB(S21(ckt=mess)) 15.00 -5.00 13.00 -10.00 11.00 -15.00 9.00 -20.00 7.00 -25.00 5.00 0.10 0.50 0.90 1.30 1.70 2.10 2.50 2.90 3.30 3.70 4.10 FREQ [GHz] EHT09264 Figure 6 Broadband Application (f = 0.8 ... 2.4 GHz), S-Parameter, VD = 5.0 V, PIN = - 10 dBm Ansoft Corporation - Microwave Harmonica (tm) v7.5 02/08/00 16:14:59 Y1 mess dB(S11(ckt=mess)) 25.00 25.00 20.00 23.00 15.00 21.00 10.00 19.00 5.00 17.00 0.00 Y2 Y1 C:\SPAR_ku.CKT Y1 mess dB(S22(ckt=mess)) mess Y2 dB(S21(ckt=mess)) 15.00 -5.00 13.00 -10.00 11.00 -15.00 9.00 -20.00 7.00 -25.00 5.00 0.10 0.50 0.90 1.30 1.70 2.10 2.50 2.90 3.30 3.70 4.10 FREQ [GHz] EHT09265 Figure 7 Data Book Broadband Application (f = 0.8 ... 2.4 GHz), S-Parameter, VD = 5.0 V, PIN = 0 dBm 339 V1.0, 2001-01-01 GaAs Components CGY 63 Ansoft Corporation - Microwave Harmonica (tm) v7.5 02/08/00 16:16:29 Y1 mess dB(S11(ckt=mess)) 25.00 25.00 20.00 23.00 15.00 21.00 10.00 19.00 5.00 17.00 0.00 Y2 Y1 C:\SPAR_ku.CKT Y1 mess dB(S22(ckt=mess)) mess Y2 dB(S21(ckt=mess)) 15.00 -5.00 13.00 -10.00 11.00 -15.00 9.00 -20.00 7.00 -25.00 5.00 0.10 0.50 0.90 1.30 1.70 2.10 2.50 2.90 3.30 3.70 4.10 FREQ [GHz] EHT09266 Figure 8 Broadband Application (f = 0.8 ... 2.4 GHz), S-Parameter, VD = 5.0 V, PIN = 3 dBm Ansoft Corporation - Microwave Harmonica (tm) v7.5 02/08/00 16:17:45 Y1 mess dB(S11(ckt=mess)) 25.00 25.00 20.00 23.00 15.00 21.00 10.00 19.00 5.00 17.00 0.00 Y2 Y1 C:\SPAR_ku.CKT Y1 mess dB(S22(ckt=mess)) mess Y2 dB(S21(ckt=mess)) 15.00 -5.00 13.00 -10.00 11.00 -15.00 9.00 -20.00 7.00 -25.00 5.00 0.10 0.50 0.90 1.30 1.70 2.10 2.50 2.90 3.30 3.70 4.10 FREQ [GHz] EHT09267 Figure 9 Data Book Broadband Application (f = 0.8 ... 2.4 GHz), S-Parameter, VD = 5.0 V, PIN = 5 dBm 340 V1.0, 2001-01-01 GaAs Components CGY 63 Broadband Application (f = 0.8 ... 2.4 GHz), POUT, PAE = f(PIN), VD = 5.0 V Broadband Application (f = 0.8 ... 2.4 GHz), POUT, PAE = f(PIN), VD = 3.2 V EHT09268 25 dBm POUT 60 % POUT PAE 20 POUT 15 900 MHz 1.4 GHz 1.9 GHz 10 5 EHT09269 25 dBm PAE POUT 50 20 40 15 30 10 30 20 5 20 0 -5 -10 -5 0 dBm 5 40 PAE 10 0 0 -5 -10 PIN Data Book 50 900 MHz 1.4 GHz 1.9 GHz PAE 900 MHz 1.4 GHz 1.9 GHz 60 % 900 MHz 1.4 GHz 1.9 GHz -5 0 dBm 5 10 0 PIN 341 V1.0, 2001-01-01 GaAs Components CGY 63 Broadband Application (f = 0.8 ... 2.4 GHz) Infineon C1 CGY 63 V1.0 C2 L2 L1 CGY 63 R2 C3 GND R1 C4 VD EHT09270 Figure 10 Testboard Parts List C1, C2, C3 1 nF C4 47 pF L1 4.7 nH L2 15 nH R1 2.7 R2 15 Data Book 342 V1.0, 2001-01-01 GaAs Components CGY 63 Electrical Characteristics, ISM2400/Bluetooth Application TA = 25 C, f = 900 MHz, ZS = ZL = 50 , unless otherwise specified. Characteristics Symbol Limit Values min. typ. max. Unit Test Conditions Supply current IDD - 100 - mA VD = 3.2 V, PIN = + 0 dBm Supply current IDD - 100 - mA VD = 3.2 V, PIN = - 20 dBm Gain G - 19 - dB VD = 3.2 V, PIN = - 20 dBm Output power at 1 dB gain compression P- 1 dB - 19 - dBm VD = 3.2 V Output power at 3 dB gain compression P- 3 dB - 20 - dBm VD = 3.2 V Overall Power added Efficiency PAE - 33 - % VD = 3.2 V, PIN = + 4 dBm Noise figure F - t.b.m. - dB - Data Book 343 V1.0, 2001-01-01 GaAs Components CGY 63 Ansoft Corporation - Microwave Harmonica (tm) v7.5 02/09/00 12:52:52 Y1 mess dB(S11(ckt=mess)) 25.00 25.00 20.00 23.00 15.00 21.00 10.00 19.00 5.00 17.00 0.00 Y2 Y1 C:\SPAR_ku.CKT Y1 mess dB(S22(ckt=mess)) mess Y2 dB(S21(ckt=mess)) 15.00 -5.00 13.00 -10.00 11.00 -15.00 9.00 -20.00 7.00 -25.00 5.00 0.00 0.40 0.80 1.20 1.60 2.00 2.40 2.80 3.20 3.60 4.00 FREQ [GHz] EHT09271 Figure 11 ISM2400/Bluetooth Application, S-Parameter, VD = 3.2 V, PIN = - 10 dBm Ansoft Corporation - Microwave Harmonica (tm) v7.5 02/09/00 12:50:52 Y1 mess dB(S11(ckt=mess)) 25.00 25.00 20.00 23.00 15.00 21.00 10.00 19.00 5.00 17.00 0.00 Y2 Y1 C:\SPAR_ku.CKT Y1 mess dB(S22(ckt=mess)) mess Y2 dB(S21(ckt=mess)) 15.00 -5.00 13.00 -10.00 11.00 -15.00 9.00 -20.00 7.00 -25.00 5.00 0.00 0.40 0.80 1.20 1.60 2.00 2.40 2.80 3.20 3.60 4.00 FREQ [GHz] EHT09272 Figure 12 Data Book ISM2400/Bluetooth Application, S-Parameter, VD = 3.2 V, PIN = 0 dBm 344 V1.0, 2001-01-01 GaAs Components CGY 63 Ansoft Corporation - Microwave Harmonica (tm) v7.5 02/09/00 12:48:24 Y1 mess dB(S11(ckt=mess)) C:\SPAR_ku.CKT 20.00 23.00 15.00 21.00 10.00 19.00 5.00 17.00 0.00 Y2 25.00 Y1 25.00 Y1 mess dB(S22(ckt=mess)) mess Y2 dB(S21(ckt=mess)) 15.00 -5.00 13.00 -10.00 11.00 -15.00 9.00 -20.00 7.00 -25.00 5.00 0.00 0.40 0.80 1.20 1.60 2.00 2.40 2.80 3.20 3.60 4.00 FREQ [GHz] EHT09273 Figure 13 ISM2400/Bluetooth Application, S-Parameter, VD = 3.2 V, PIN = 3 dBm Bluetooth Application, POUT = f(PIN), f = 2.45 GHz, VD = 3.2 V, IDSS = 130 mA EHT09274 25 dBm POUT 50 % PAE 20 40 POUT 15 30 10 20 PAE 5 0 -10 -8 -6 -4 -2 0 10 2 4 0 dBm 10 PIN Data Book 345 V1.0, 2001-01-01 GaAs Components CGY 63 ISM2400/Bluetooth Application CGY 63 V1.0 C5 Infineon C2 L1 C1 CGY 63 C C3 4 GND R1 VD EHT09275 Figure 14 Testboard Parts List C1, C2, C3 1 nF C4 6.8 pF C5 1 pF L1 15 nH R1 2.7 Data Book 346 V1.0, 2001-01-01 GaAs Components CGY 63 Electrical Characteristics, ISM900 Application TA = 25 C, f = 900 MHz, ZS = ZL = 50 , unless otherwise specified. Characteristics Symbol Limit Values min. typ. max. Unit Test Conditions Supply current IDD - 100 - mA VD = 3.2 V, PIN = - 20 dBm Gain G - 25 - dB VD = 3.2 V, PIN = - 20 dBm Output power at 1 dB gain compression P- 1 dB - 19 - dBm VD = 3.2 V Output Power PO - 20 - dBm PIN = + 0 dBm Overall Power added Efficiency PAE - 40 - % VD = 3.2 V, PIN = + 0 dBm Supply current IDD - 100 - mA VD = 5.0 V, PIN = - 20 dBm Gain G - 25 - dB VD = 5.0 V, PIN = - 20 dBm Output Power PO - 22 - dBm VD = 5.0 V, PIN = 3 dBm Output power at 1dB gain compression P- 1 dB - 21 - dBm VD = 5.0 V Overall Power added Efficiency PAE - 40 - % VD = 5.0 V, PIN = 3 dBm Data Book 347 V1.0, 2001-01-01 GaAs Components CGY 63 Ansoft Corporation - Microwave Harmonica (tm) v7.5 02/09/00 16:04:21 Y1 mess dB(S11(ckt=mess)) 25.00 26.00 20.00 24.00 15.00 22.00 10.00 20.00 5.00 18.00 0.00 Y2 Y1 C:\SPAR_ku.CKT Y1 mess dB(S22(ckt=mess)) mess Y2 dB(S21(ckt=mess)) 16.00 -5.00 14.00 -10.00 12.00 -15.00 10.00 -20.00 8.00 -25.00 6.00 0.10 0.50 0.90 1.30 1.70 2.10 2.50 2.90 3.30 3.70 4.10 FREQ [GHz] EHT09276 Figure 15 ISM900 Application S-Parameter, VD = 5.0 V, PIN = - 10 dBm Ansoft Corporation - Microwave Harmonica (tm) v7.5 02/09/00 16:06:44 Y1 mess dB(S11(ckt=mess)) 25.00 26.00 20.00 24.00 15.00 22.00 10.00 20.00 5.00 18.00 0.00 Y2 Y1 C:\SPAR_ku.CKT Y1 mess dB(S22(ckt=mess)) mess Y2 dB(S21(ckt=mess)) 16.00 -5.00 14.00 -10.00 12.00 -15.00 10.00 -20.00 8.00 -25.00 6.00 0.10 0.50 0.90 1.30 1.70 2.10 2.50 2.90 3.30 3.70 4.10 FREQ [GHz] EHT09277 Figure 16 Data Book ISM900 Application S-Parameter, VD = 5.0 V, PIN = 0 dBm 348 V1.0, 2001-01-01 GaAs Components CGY 63 Ansoft Corporation - Microwave Harmonica (tm) v7.5 02/09/00 16:09:09 Y1 mess dB(S11(ckt=mess)) 25.00 26.00 20.00 24.00 15.00 22.00 10.00 20.00 5.00 18.00 0.00 Y2 Y1 C:\SPAR_ku.CKT Y1 mess dB(S22(ckt=mess)) mess Y2 dB(S21(ckt=mess)) 16.00 -5.00 14.00 -10.00 12.00 -15.00 10.00 -20.00 8.00 -25.00 6.00 0.10 0.50 0.90 1.30 1.70 2.10 2.50 2.90 3.30 3.70 4.10 FREQ [GHz] EHT09278 Figure 17 ISM900 Application S-Parameter, VD = 5.0 V, PIN = 3 dBm Ansoft Corporation - Microwave Harmonica (tm) v7.5 02/14/00 10:26:41 Y1 mess dB(S11(ckt=mess)) 25.00 26.00 20.00 24.00 15.00 22.00 10.00 20.00 5.00 18.00 0.00 Y2 Y1 C:\SPAR_ku.CKT Y1 mess dB(S22(ckt=mess)) mess Y2 dB(S21(ckt=mess)) 16.00 -5.00 14.00 -10.00 12.00 -15.00 10.00 -20.00 8.00 -25.00 6.00 0.10 0.50 0.90 1.30 1.70 2.10 2.50 2.90 3.30 3.70 4.10 FREQ [GHz] EHT09279 Figure 18 Data Book ISM900 Application S-Parameter, VD = 3.2 V, PIN = - 10 dBm 349 V1.0, 2001-01-01 GaAs Components CGY 63 Ansoft Corporation - Microwave Harmonica (tm) v7.5 02/14/00 10:29:40 Y1 mess dB(S11(ckt=mess)) 25.00 26.00 20.00 24.00 15.00 22.00 10.00 20.00 5.00 18.00 0.00 Y2 Y1 C:\SPAR_ku.CKT Y1 mess dB(S22(ckt=mess)) mess Y2 dB(S21(ckt=mess)) 16.00 -5.00 14.00 -10.00 12.00 -15.00 10.00 -20.00 8.00 -25.00 6.00 0.10 0.50 0.90 1.30 1.70 2.10 2.50 2.90 3.30 3.70 4.10 FREQ [GHz] EHT09280 Figure 19 ISM900 Application S-Parameter, VD = 3.2 V, PIN = 0 dBm Ansoft Corporation - Microwave Harmonica (tm) v7.5 02/14/00 10:30:35 Y1 mess dB(S11(ckt=mess)) 25.00 26.00 20.00 24.00 15.00 22.00 10.00 20.00 5.00 18.00 0.00 Y2 Y1 C:\SPAR_ku.CKT Y1 mess dB(S22(ckt=mess)) mess Y2 dB(S21(ckt=mess)) 16.00 -5.00 14.00 -10.00 12.00 -15.00 10.00 -20.00 8.00 -25.00 6.00 0.10 0.50 0.90 1.30 1.70 2.10 2.50 2.90 3.30 3.70 4.10 FREQ [GHz] EHT09281 Figure 20 Data Book ISM900 Application S-Parameter, VD = 3.2 V, PIN = 3 dBm 350 V1.0, 2001-01-01 GaAs Components CGY 63 ISM900 Application, POUT, PAE = f(PIN) EHT09282 25 dBm POUT 20 60 % PAE POUT 50 3.2 V 5.0 V 40 15 PAE 30 10 3.2 V 5.0 V 5 20 0 -5 -10 10 -5 0 dBm 5 0 PIN Data Book 351 V1.0, 2001-01-01 GaAs Components CGY 63 ISM900 Application Infineon CGY 63 V1.0 C2 L2 C1 CGY 63 C3 GND L1 R1 VD EHT09283 Figure 21 Testboard Parts List C1, C2, C3 1 nF L1 , L2 15 nH R1 2.7 Data Book 352 V1.0, 2001-01-01 GaAs Components CGY 63 Package Outlines SCT-595 (Special Package) 2.9 0.2 B (2.2) 1.2 +0.1 -0.05 1.1 max (0.3) 1) 1 2 3 10max +0.2 acc. to DIN 6784 4 (0.23) (0.13) 5 10max 1.6 0.1 0.1 max 2.6 max 0.25 min (0.4) 1) 0.3 +0.1 -0.05 0.15 +0.1 -0.06 0.6 +0.1 -0.05 0.20 0.95 1.9 M B A Contour of slot depends on profile of gull-wing lead form GPW05997 0.25 1) M A Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Book 353 Dimensions in mm V1.0, 2001-01-01 GaAs MMIC CGY 96 Data Sheet * * * * * * Power amplifier for GSM class 4 phones 3.2 W (35 dBm) output power at 3.5 V Overall power added efficiency 50% Fully integrated 3 stage amplifier Power ramp control Input matched to 50 , simple output match MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (taped) Package CGY 96 CGY 96 Q62702-G63 MW-16 Maximum Ratings Parameter Symbol Value Unit Positive supply voltage VD 9 V Supply current ID 4 A Channel temperature TCh 150 C Storage temperature Tstg - 55 ... + 150 C Pulse peak power dissipation PPulse 17 W Total power dissipation (TC 83 C) TC: Temperature on case Ptot 9.5 W Parameter Symbol Value Unit Junction-Case RthJCh 7.0 K/W Thermal Resistance Data Book 354 V1.0, 2001-01-01 GaAs Components CGY 96 VControl 8 VNEG 13 RF IN VD1 VD2 1 2 CGY 96 Current Control Circuit 16 4, 5, 6 14, 15 GND1 VD3 / RF OUT 17 GND2 EHT09158 Figure 1 Functional Block Diagram Pin Configuration Pin No. Name Configuration 1 VD1 Drain voltage 1st stage 2 VD2 Drain voltage 2nd stage 3 N.C. - 4, 5, 6 VD3/RF OUT Drain 3rd stage and RF-output 7 N.C. - 8 VControl Control voltage for power ramping 9, 10, 11, 12 N.C. - 13 VNEG Negative voltage for current control circuit 14, 15 GND1 Ground pin 1st stage 16 RF IN RF Input (17) GND2 Ground (backside of MW-16 package) Data Book 355 V1.0, 2001-01-01 GaAs Components CGY 96 Electrical Characteristics TA = 25 C, VD = 3.5 V, VNEG = - 5 V, VControl = 2.2 V; duty cycle 12.5%, tON = 577 s Parameters Symbol Limit Values min. typ. max. Unit Test Conditions Frequency range f 880 - 915 MHz - Supply current ID - 1.8 2.2 A PIN = 2 dBm Gain (small signal) G 35 38 - dB - Power gain GP 32.5 33 - dB PIN = 2 dBm Output Power POUT 34.5 35 - dBm PIN = 2 dBm, VControl = 2.0 ... 2.5 V Overall Power added Efficiency 44 50 - % PIN = 2 dBm Dynamic range output - power 75 80 - dB VControl = 0.2 ... 2.2 V Harmonics H (2 f0) H (3 f0) H (4 f0)) 35 35 35 - 40 - 43 - 44 - - - dBc PIN = 2 dBm Noise Power in RX (935 - 960 MHz) NRX - - 81 - 70 dBm PIN = 2 dBm, POUT = 35 dBm, 100 kHz RBW Stability - - 10:1 - - all spurious outputs < - 60 dBc, VSWR load, all phase angles Input VSWR - 3:1 1.7:1 - - - Data Book 356 V1.0, 2001-01-01 GaAs Components CGY 96 Output Power and PAE vs. Input Power VD = 3.5 V, VControl = 2.2 V, f = 900 MHz, duty cycle 12.5%, tON = 577 s EHT09159 39 dBm POUT 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 -16 POUT PAE -12 -8 -4 0 dBm 6 Output Power and PAE vs. Control Voltage VD = 3.5 V, PIN = 0 dBm, f = 900 MHz, duty cycle 12.5%, tON = 577 s 80 % 70 65 60 55 50 45 40 35 30 25 20 15 10 5 0 PAE POUT 100 % 90 PAE 20 80 10 70 0 60 -10 50 -20 40 PAE -30 30 -40 20 -50 10 -60 0 0.4 0.8 1.2 1.6 2 2.4 V 3 0 VCON PIN Data Book EHT09160 40 dBm POUT 30 357 V1.0, 2001-01-01 GaAs Components CGY 96 Power Gain and Input Return Loss vs. Frequency VD = 3.5 V, VControl = 2.2 V, PIN = 5 dBm, duty cycle 12.5%, tON = 577 s EHT09161 dB 40 dBm POT 39 33 38 32 37 31 36 30 35 29 34 28 33 27 32 26 31 35 Power Gain Output Power vs. Drain Voltage matched for VD = 3.5 V, VControl = 2.2 V, PIN = 0 dBm, duty cycle 12.5%, tON = 577 s 25 0.88 0.89 0.9 30 2.2 2.6 GHz 0.915 f REQ EHT09163 3 3.4 3.8 4.2 4.6 V 5.2 VD EHT09162 -10.0 dB Input Return Loss -11.0 -11.5 -12.0 -12.5 -13.0 -13.5 -14.0 -14.5 -15.0 0.88 Data Book 0.89 0.9 GHz 0.915 f REQ 358 V1.0, 2001-01-01 GaAs Components CGY 96 Output Power at Different Temperatures VD = 3.5 V, VControl = 2.2 V, f = 900 MHz, duty cycle 12.5%, tON = 577 s EHT09164 36 dBm POUT PAE at Different Temperatures VD = 3.5 V, VControl = 2.2 V, f = 900 MHz, duty cycle 12.5%, tON = 577 s EHT09165 55 % PAE 50 35 45 34 40 35 33 32 -20 C 20 C 70 C 30 25 31 20 30 15 -20 C 20 C 70 C 10 29 28 -11 -9 -7 -5 -3 -1 1 3 5 0 -11 -9 -7 -5 -3 -1 1 3 5 dBm 9 PIN Data Book 5 dBm 9 PIN 359 V1.0, 2001-01-01 GaAs Components CGY 96 R11 VAUX R12 T1 L11 CLK VCON C11 GND C14 C12 D1 C13 C3 C4 CGY 96 OUT IN L3 C2 L1 L2 C1 Infineon C5 R1 GSM POWER AMPLIFIER VD CGY 96 EHT09166 Figure 2 CGY 96 Evaluation Board Layout size is 34 mm x 27 mm. Connections * VD 2.7 to 6 VDC, pulsed (GSM: 12.5% duty cycle, tON= 0.577 ms) * VAUX 2.7 to 6 VDC * VControl 0.2 to 2.2 VDC (0.2 V: min. POUT, 2.2 V: max. POUT) * CLK Data Book 5 MHz to 15 MHz (with a 10 H inductor) or 150 kHz to 250 kHz (with a 100 H inductor instead of the 10 H) (rectangular signal, 50% duty, 0 V to VD voltage level) 360 V1.0, 2001-01-01 GaAs Components CGY 96 Power on Sequence 1. continuous clock (CLK) on 2. turn on VAUX ==> check negative voltage at pin#13 (- 5 ... - 10 V) 3. turn on VControl (may be at the same time as 2) turn on Drain voltage VD turn on Input Power Operation without using the Negative Voltage Generator Operation without using the on-board negative voltage generator is possible. In that case apply - 5 ... - 8 V directly at pin#13 (VNEG-pin). The devices in front of pin 13 are not necessary in that case. VAUX C14 L 11 C12 D1.2 R 11 (VNEG) D1.1 C13 C11 CLK T1 VControl VD R 12 CGY 96 VNEG RF IN GND1 GND1 RF IN VCON C5 L3 RF OUT RF OUT RF OUT RF OUT C3 VD2 VD1 1 C4 C2 L1 R1 L2 C1 EHT09167 Figure 3 Data Book Application Circuit 361 V1.0, 2001-01-01 GaAs Components CGY 96 Part List CGY 96 Negative Voltage Generator L1 33 nH D1 BAS 40-04W L2 33 nH T1 BC 848B L3 33 nH1) L11 10 H C1 1 nF C11 1 nF C2 12 pF C12 1 nF C3 10 pF2) C13 47 nF C4 2.2 pF2) C14 1 nF C5 1 nF R11 3.8 k R1 3.3 R12 680 1) 2) 33 nH SMD-Inductor for drain3: Part number BV1250 distributed by Horst David GmbH, 85375 Neufarn, Germany, Phone-No. +49-8165/9548-0, Fax-No. +49-8165/9548-28 for maximum efficiency use high quality capacitors for the output matching: Part-number ACCU-P0603 distributed by AVX GmbH, 85757 Karlsfeld, Germany, Phone-No. +49-8131/9004-0 Data Book 362 V1.0, 2001-01-01 GaAs Components CGY 96 Determination of Permissible Total Power Dissipation for Continuous and Pulse Operation The purpose of the following procedure is to prevent the junction temperature Tj from exceeding the maximum allowed data sheet value. Tj is determined by the dissipated power and the thermal properties of the device and board. The dissipated power is the power which remains in the chip and heats the device and junction. It does not contain RF signals which are coupled out consistently. This is a two step approach: For a pulsed condition both steps are needed. For CW and DC step one is sufficient. Step 1: Continuous Wave / DC Operation For the determination of the permissible total power dissipation Ptot-DC from the diagram below it is necessary to obtain the temperature of the case TC first. Because the MW-16 heat sink is not easily accessible to a temperature measurement the thermal resistance is defined as RthJC using the case temperature TC. There are two cases: * When RthCA (case to ambient) is not known: Measure TC in operation of device and board at the upper side of the case where the temperature is highest. Small thermoelements (< 1 mm, thin wires, thermopaste) or thermopapers with low heat dissipation are well suited. Thermoelement for TCASE Case (C) Junction (J) Soldered Heatsink PCB Ambient (A) EHT09168 Figure 4 Data Book Measurement of Case Temperature TC 363 V1.0, 2001-01-01 GaAs Components CGY 96 * When RthCA is already known. Calculate the case temperature as TC = PDiss x RthCA + TA Graph for Ptot-DC [mW] EHT09169 10000 mW Ptot DC 8000 7000 6000 5000 4000 3000 2000 1000 0 0 20 40 60 80 100 120 C 160 TC Step 2: Pulsed Operation For the calculation of the permissible pulse load Ptot-max the following formula is applicable: Ptot-max = Ptot-DC x Pulse Factor = Ptot-DC x (Ptot-max/Ptot-DC) Use the values for Ptot-DC as derived from the above diagram and for the Pulse Factor = Ptot-max/Ptot-DC from the following diagram to get a specific value. Data Book 364 V1.0, 2001-01-01 GaAs Components CGY 96 Pulse Factor Ptot-max/Ptot-DC = f(tP) EHT09170 10 Ptot max Ptot DC tp tp D= T T D= 5 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 10-6 10-5 10-4 10-3 10-2 10-1 s 100 tp Ptot-max should not exceed the absolute maximum rating for the dissipated power PPulse = "Pulse peak power" Reliability Considerations The above procedure yields the upper limit for the power dissipation for continuous wave (cw) and pulse applications which correspond to the maximum allowed junction temperature. For best reliability keep the junction temperature low. The following formula allows to track the individual contributions which determine the junction temperature. Tj = (Ptot-Diss/Pulse Factor x Junction temperature (= channel temperature) Power dissipated in the chip, Rth of device from junction divided by the applicable pulse factor (= 1 for DC and to case CW). It does not contain decoupled RF- power Data Book 365 RthJC) + TC Temperature of the case, measured or calculated, device and board operating V1.0, 2001-01-01 GaAs Components CGY 96 Package Outlines MW-16 (Special Package) 1.6 max 7 0.1 max 7 x 0.8 = 5.6 1.4 0.1 D M A-B D C 0.350.05 B H 7 4x 0.2 A-B D H 16x 0.2 D +0.05 0.15 -0. 06 0...7 16x 0.1 C C Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Book A 0.8 Exposed solderable heatsink o4.57 0.05 GPW05969 9 0.2 366 Dimensions in mm V1.0, 2001-01-01 GaAs MMIC CGY 98 Data Sheet * Broadband power amplifier (800 ... 2000 MHz) * GSM, AMPS or PCN * Operating voltage range: 2.7 to 5.0 V * POUT = 35.0 dBm at VD = 3.5 V * Overall power added efficiency 55% * Easy external matching ESD: Electrostatic discharge sensitive device, observe handling precautions! SCT 595 Type Marking Ordering Code (taped) Package CGY 98 G8s Q62702-G0079 SCT-595 Maximum Ratings Parameter Symbol Value Unit Positive supply voltage VD 6 V Supply current stage 1 ID 0.6 A Supply current stage 2 ID 1.8 A Channel temperature TCh 150 C Storage temperature Tstg - 55 ... + 150 C Total power dissipation (TS 70 C) TS: Temperature at soldering point Ptot 2.0 W Pulse peak power (dissipated) tON (pulsed mode) 2 ms PPulse 4.5 W tON (pulsed mode) 2 ms < 10 ms PPulse 2.5 W tON (switching mode) 10 ms and if accumulated PPulse 1.6 W number of on/of switching cycles > 1 x 10 5 Data Book 367 V1.0, 2001-01-01 GaAs Components CGY 98 Thermal Resistance Parameter Symbol Value Unit Channel-soldering point RthChS 40 K/W VD1 3 RF IN / VG 1 4 2, 5 GND Figure 1 RF OUT / VD2 2, 5 GND EHT09171 Functional Block Diagram Pin Configuration Pin No. Name Configuration 1 RF IN/VG RF input power and Gate voltage 2 GND RF and DC ground 3 VD1 Pos. drain voltage 1st stage 4 RF OUT/VD2 RF output power / pos. drain voltage 2nd stage 5 GND Data Book RF and DC ground 368 V1.0, 2001-01-01 GaAs Components CGY 98 GSM-Operation Electrical Characteristics on GSM Application Board TA = 25 C, ZS = ZL = 50 , duty cycle 12.5%, tON = 577 s unless otherwise specified Parameters Symbol Limit Values min. typ. max. Unit Test Conditions Frequency range f 880 - 915 MHz - Supply current IDD - 1.6 - A VD = 3.5 V, PIN = + 15 dBm Power gain G - 20 - dB VD = 3.5 V, PIN = + 15 dBm Output Power PO - 33.2 - dBm VD = 2.8 V, PIN = + 15 dBm Output Power PO - 34.4 - dBm VD = 3.2 V, PIN = + 15 dBm Output Power PO - 35.0 - dBm VD = 3.5 V, PIN = + 15 dBm Overall Power added Efficiency PAE - 55 - % VD = 3.5 V, PIN = + 15 dBm - - - - - 36 - 36 - - dBc - Input VSWR - - 2:1 - - VD = 3.5 V or VD = 4.8 V Load mismatch - No module damage for 10 s - PIN = 10 dBm, VD 4.6 V, ZS = 50 , Harmonics 2 f0 3 f0 Load VSWR = 20:1 for all phase Stability Data Book - All spurious output more than 70 dB below desired signal level 369 - PIN = 10 dBm, VD = 4.6 V, ZS = 50 , Load VSWR = 5:1 for all phase V1.0, 2001-01-01 GaAs Components CGY 98 Output Power and PAE vs. Input Power VD = 3.5 V, VG = - 1.5 V, f = 900 MHz EHT09172 40 dBm POUT 35 Output Power and PAE vs. Input Power VD = 3.2 V, VG = - 1.5 V, f = 900 MHz 70 EHT09173 40 dBm 80 % POUT PAE 35 80 % 70 POUT POUT 30 60 30 60 25 50 25 50 20 40 20 40 15 30 15 30 10 20 10 20 5 10 5 10 PAE PAE 0 -10 -6 -2 2 PAE 6 10 0 -10 0 dBm 18 -6 -2 2 6 10 0 dBm 18 PIN PIN Output Power and PAE vs. Input Power VD = 2.8 V, VG = - 1.5 V, f = 900 MHz EHT09174 40 dBm POUT 80 % 70 35 PAE POUT 30 60 25 50 20 40 15 30 PAE 10 20 5 10 0 -10 -6 -2 2 6 10 0 dBm 18 PIN Data Book 370 V1.0, 2001-01-01 GaAs Components CGY 98 Output Power and PAE vs. Frequency VG = - 1.5 V, PIN = 15 dBm, VD = 3.5 V EHT09175 36.5 dBm POUT Output Power and PAE vs. VG VD = 3.5 V, PIN = 15 dBm, f = 900 MHz POUT PAE PAE EHT09176 40 dBm 60 % 35 70 PAE 55 36.0 30 35.5 45 34.5 40 34.0 35 33.5 30 880 885 890 895 900 905 MHz 915 f Output Power and PAE vs. VD VG = - 1.5 V, PIN = 15 dBm, f = 900 MHz EHT09177 40 dBm POUT 38 POUT 36 90 % 80 PAE PAE 50 20 40 15 30 10 20 5 10 Temperature Characteristics GSM VD = 3.5 V, f = 900 MHz, VG = - 1.5 V 32 60 26 50 24 40 22 30 40 28 30 26 20 20 24 10 18 0 16 -12 -8 Data Book 70 28 30 VD 100 % 90 PAE 80 POUT /-20 C POUT /25 C POUT /80 C 30 60 V 5 EHT09178 36 dBm POUT 34 50 2 2.5 3 3.5 4 0 V -0.5 VG 32 1 1.5 PAE 25 0 -4 -3.5 -3 -2.5 -2 -1.5 70 34 60 POUT 50 POUT 35.0 22 80 % PAE/-20 C PAE/25 C PAE/80 C -4 0 4 8 20 10 0 12 dBm 20 PIN 371 V1.0, 2001-01-01 GaAs Components CGY 98 PCN(DCS1800)-Operation Electrical Characteristics on PCN Application Board TA = 25 C, ZS = ZL = 50 , duty cycle 12.5%, tON = 577 s unless otherwise specified Parameters Symbol Limit Values min. typ. max. Unit Test Conditions Frequency range f 1710 - 1785 MHz - Supply current IDD - 1.6 - A VD = 3.5 V, PIN = + 15 dBm Power gain G - 19 - dB VD = 3.5 V, PIN = + 15 dBm Output Power PO - 32.1 - dBm VD = 2.8 V, PIN = + 15 dBm Output Power PO - 33.4 - dBm VD = 3.2 V, PIN = + 15 dBm Output Power PO - 34.0 - dBm VD = 3.5 V, PIN = + 15 dBm Overall Power added Efficiency PAE - 45 - % VD = 3.5 V, PIN = + 15 dBm - - - - - 36 - 36 - - dBc - Input VSWR - - 2:1 - - VD = 3.5 V or VD = 4.8 V Load mismatch - No module damage for 10 s - PIN = 10 dBm, VD 4.6 V, ZS = 50 , Harmonics 2 f0 3 f0 Load VSWR = 20:1 for all phase Stability Data Book - All spurious output more than 70 dB below desired signal level 372 - PIN = 10 dBm, VD = 4.6 V, ZS = 50 , Load VSWR = 5:1 for all phase V1.0, 2001-01-01 GaAs Components CGY 98 Output Power and PAE vs. Input Power VD = 3.5 V, VG = - 1.7 V, f = 1750 MHz EHT09179 40 dBm POUT 35 80 % 70 30 Output Power and PAE vs. Input Power VD = 3.2 V, VG = - 1.8 V, f = 1750 MHz EHT09180 40 dBm POUT PAE 60 35 80 % 70 30 60 POUT POUT 25 50 25 50 20 40 20 40 15 30 15 30 10 20 10 20 5 10 5 10 PAE 0 -10 -6 -2 PAE 2 PAE 6 10 0 dBm 18 0 -10 PIN -6 -2 2 6 10 0 dBm 18 PIN Output Power and PAE vs. Input Power VD = 2.8 V, VG = - 1.9 V, f = 1750 MHz EHT09181 40 dBm POUT 35 80 % 70 30 PAE 60 POUT 25 50 20 40 15 30 PAE 10 20 5 10 0 -10 -6 -2 2 6 10 0 dBm 18 PIN Data Book 373 V1.0, 2001-01-01 GaAs Components CGY 98 Output Power and PAE vs. Frequency VG = - 1.7 V, PIN = 15 dBm, VD = 3.5 V EHT09182 36.5 dBm POUT Output Power and PAE vs. VG VD = 3.5 V, PIN = 15 dBm, f = 1750 MHz EHT09183 40 dBm 60 % POUT PAE 60 % PAE 36.0 55 30 50 35.5 50 20 40 POUT PAE 35.0 34.5 POUT 34.0 33.5 1710 1725 45 10 30 40 0 20 35 -10 10 30 MHz 1785 f 1740 1755 -20 -4 -3.5 -3 -2.5 -2 -1.5 POUT Temperature Characteristics PCN VD = 3.5 V, f = 1750 MHz, VG = - 1.7 V EHT09184 80 % 36 70 34 60 POUT 32 PAE PAE 40 28 30 26 20 24 10 1 1.5 2 2.5 3 3.5 4 V 5 0 100 % 90 PAE 31 80 29 27 POUT /-20 C 70 POUT /25 C POUT /80 C 60 25 50 23 40 21 30 19 PAE/-20 C 20 PAE/25 C PAE/80 C 10 17 15 -12 -8 VD Data Book EHT09185 35 dBm POUT 33 50 30 22 0 V -0.5 VG Output Power and PAE vs. VD VG = - 1.7 V, PIN = 15 dBm, f = 1750 MHz 38 dBm PAE -4 0 4 8 0 12 dBm 20 PIN 374 V1.0, 2001-01-01 GaAs Components CGY 98 VG C1 R1 C7 CGY 98 RF IN CGY 98 V1.0 R2 C4 C5 C6 RF OUT C2 L1 BS GND VD C3 VC EHT09186 Figure 2 CGY 98 GSM Application Board Board material: FR4 / 0.2 mm; Boardsize: 49 mm x 30 mm Part List Element Value Part Type Element Value Part Type L1 33 nH 1) C5 12 pF 06032) C1 1 nF 0603 C6 6.8 pF 06032) C2 1 nF 0603 C7 6.8 pF 0603 C3 100 nF 0603 R1 150 0603 C4 1 nF 0603 R2 6.8 0603 1) 2) 33 nH SMD-Inductor for drain3: Part number BV1250 distributed by Horst David GmbH, 85375 Neufarn, Germany, Phone-No. +49-8165/9548-0, Fax-No. +49-8165/9548-28 For maximum efficiency use high quality capacitors for the output matching: Part-number ACCU-P0603 distributed by AVX GmbH, 85757 Karlsfeld, Germany, Phone-No. +49-8131/9004-0 Data Book 375 V1.0, 2001-01-01 GaAs Components CGY 98 VG CGY 98 V1.0 C7 C1 CGY 98 R1 RF IN R2 C 4 RF OUT C5 C6 C2 L1 BS L2 GND VD C3 VC EHT09187 Figure 3 CGY 98 PCN Application Board Board material: FR4 / 0.2 mm; Boardsize: 4.9 mm x 3.0 mm Part List Element Value Part Type Element Value Part Type L1 33 nH 1) C5 3 pF 06032) L2 33 nH TOKO 0603 - LL 1608 C6 3 pF 06032) C1 1 nF 0603 C7 5.5 pF 0603 C2 1 nF 0603 R1 150 0603 C3 100 nF 0603 C4 8 pF 0402 1) 2) 33 nH SMD-Inductor for drain3: Part number BV1250 distributed by Horst David GmbH, 85375 Neufarn, Germany, Phone-No. +49-8165/9548-0, Fax-No. +49-8165/9548-28 For maximum efficiency use high quality capacitors for the output matching: Part-number ACCU-P0603 distributed by AVX GmbH, 85757 Karlsfeld, Germany, Phone-No. +49-8131/9004-0 Data Book 376 V1.0, 2001-01-01 GaAs Components CGY 98 Determination of Permissible Total Power Dissipation for Continuous and Pulse Operation The dissipated power is the power which remains in the chip and heats the device. It does not contain RF signals which are coupled out consistently. a) Continuous Wave / DC Operation For the determination of the permissible total power dissipation Ptot-DC from the diagram below it is necessary to obtain the temperature of the soldering point TS first. There are two cases: * When RthSA (soldering point to ambient) is not known: Measure TS with a temperature sensor at the leads were the heat is transferred from the device to the board (normally at the widest source or ground lead for GaAs). Use a small sensor of low heat transport, for example a thermoelement (< 1 mm) with thin wires or a temperature indicating paper while the device is operating. * When RthSA is already known: TS = PDiss x RthSA + TA Permissible Total Power Dissipation in DC Operation EHT09188 2400 mW Ptot DC 2000 1800 1600 1400 1200 1000 800 600 400 200 0 0 40 80 120 C 180 TS Temperature of soldering point, TS Data Book 377 V1.0, 2001-01-01 GaAs Components CGY 98 b) Pulsed Operation For the calculation of the permissible pulse load Ptot-max the following formula is applicable: Ptot-max = Ptot-DC x Pulse Factor = Ptot-DC x (Ptot-max/Ptot-DC) Use the values for Ptot-DC as derived from the above diagram and for the Pulse Factor = Ptot-max/Ptot-DC from the following diagram to get a specific value. Pulse Factor Ptot-max/Ptot-DC = f(tp) EHT09189 10 tp Ptot max Ptot DC tp D= T T D= 0.01 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 5 1 10-5 10-4 10-3 10-2 10-1 s 100 tp Ptot-max should not exceed the absolute maximum rating for the dissipated power PPulse = "Pulse peak power" Data Book 378 V1.0, 2001-01-01 GaAs Components CGY 98 Reliability Considerations The above procedure yields the upper limit for the power dissipation for continuous wave (cw) and pulse applications which corresponds to the maximum allowed channel temperature. For best reliability keep the channel temperature low. The following formula allows to track the individual contributions which determine the channel temperature. TCh = (PDiss/Pulse Factor x RthChS) + TS Channel temperature (= junction temperature) Power dissipated in the chip, divided by the applicable pulse factor (= 1 for DC and CW). It does not contain decoupled RF- power Rth of device Temperature of soldering point, measured or calculated Data Book 379 from channel to soldering point V1.0, 2001-01-01 GaAs Components CGY 98 Soldering Recommendation * Foot Print Drawing C63060-A2120-A001-01-0027 * Soldering Wave soldering: unsuitable Reflow soldering: suitable, max. 3 times (IR or VPR) Soldering profile: Ramp-up preheating Ramp-up peak Exposure to molten solder Typ. solder temperature Peak temperature Ramp-down Temperature gradient: max. + 2 K/s Time at 100 - 150 C: min. 90 s Temperature gradient: max. + 6 K/s Above 183 C max. 150 s Typ. 215 - 245 C max. 30 s Max. peak 260 C max. 10 s Temperature gradient: min. - 6 C/s (see also soldering standard profile of data book "Package information") Comments Slow ramp-up, long preheating phase and low max. temperature recommended * Solder Paste Thickness 150 - 200 m * Control of Soldering (voids) - Visual inspection - Cross sectioning - Measurement of case temperature / thermal resistance case to ambient * JEDEC A-112A Level 1 * IPC-9501 (IPC-4202) Level 111 storage floor life at 30 C / 60% unlimited IR/Convection; max. 245 C; < 6 K/s Data Book 380 storage floor life at 30 C / 90% unlimited V1.0, 2001-01-01 GaAs Components CGY 98 Package Outlines SCT-595 (Special Package) 2.9 0.2 B (2.2) 1.2 +0.1 -0.05 1.1 max (0.3) 1) 1 2 3 10max +0.2 acc. to DIN 6784 4 (0.23) (0.13) 5 10max 1.6 0.1 0.1 max 2.6 max 0.25 min (0.4) 1) 0.3 +0.1 -0.05 0.15 +0.1 -0.06 0.6 +0.1 -0.05 0.20 0.95 1.9 M B A Contour of slot depends on profile of gull-wing lead form GPW05997 0.25 1) M A Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Book 381 Dimensions in mm V1.0, 2001-01-01 GaAs MMIC CGY 99 Preliminary Data Sheet * * * * * * Broadband 3-stage Power Amplifier (800 ... 2400 MHz) GSM, AMPS, PCN, PCS Operating voltage range: 2.7 to 6.0 V POUT = 35.0 dBm at VD = 3.5 V Overall power added efficiency 55% Easy external matching P-TSSOP-10-2 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (taped) Package CGY 99 CGY 99 Q62702-G0128 P-TSSOP-10-2 Maximum Ratings Parameter Symbol Value Unit Positive supply voltage VD 6 V Channel temperature TCh 150 C Storage temperature Tstg - 55 ... + 150 C Total power dissipation (TS 81 C) TS: Temperature at soldering point Ptot 4.0 W Pulse peak power duty cycle 12.5%, tON = 0.577 ms PPulse 10.0 W Parameter Symbol Value Unit Channel-soldering point RthChS 12 K/W Thermal Resistance Data Book 382 V1.0, 2001-01-01 GaAs Components CGY 99 VD1 VD2 3 RF IN / VG 1, 2 4 7, 8, 9 RF OUT / VD3 6, 10 11 GND1 Figure 1 CGY 99 11 GND EHT08924 Functional Block Diagram Pin Configuration Pin No. Name Configuration 1, 2 VD2 Drain voltage 2nd stage 3 VD1 Drain voltage 1st stage 4 RF IN/VG RF input/gate voltage 5 N.C. - 6, 7, 8, 9, 10 VD3/RF OUT RF output/drain voltage 3rd stage 11 GND Ground 2nd and 3rd stage (backside of P-TSSOP-10-2 package) Data Book 383 V1.0, 2001-01-01 GaAs Components CGY 99 GSM-Operation Electrical Characteristics (On GSM Application Board) TA = 25 C, ZS = ZL = 50 , duty cycle 12.5%, tON = 577 s, unless otherwise specified. Parameters Symbol Limit Values min. typ. max. Unit Test Conditions Frequency range f 880 - 915 MHz - Supply current IDD - 1.6 - A VD = 3.5 V, PIN = + 5 dBm Power Gain G - 30 - dB VD = 3.5 V, PIN = + 5 dBm Output Power PO - 33.2 - dBm VD = 2.8 V, PIN = + 5 dBm Output Power PO - 34.4 - dBm VD = 3.2 V, PIN = + 5 dBm Output Power PO - 35.0 - dBm VD = 3.5 V, PIN = + 5 dBm Overall Power added Efficiency PAE - 55 - % VD = 3.5 V, PIN = + 5 dBm Harmonics 2 f0 3 f0 - dBc - Input VSWR - - VD = 3.5 V or VD = 4.8 V - - - 40 - 40 - - - 2:1 - Load mismatch - Load VSWR = 20 : 1 for all phase No module damage for 10 s. - PIN = 5 dBm, VD 4.6 V, ZS = 50 Stability Load VSWR = 5 : 1 for all phase All spurious output more - than 70 dB below desired signal level PIN = 5 dBm, VD = 4.6 V, ZS = 50 Data Book - 384 V1.0, 2001-01-01 GaAs Components CGY 99 GSM-Measurements Output Power and PAE vs. Input Power f = 900 MHz, VD = 3.5 V, VG = - 0.9 V EHT08925 36 dBm POUT 35 34 Output Power and PAE vs. VD f = 900 MHz, PIN = 5 dBm, VG = - 0.9 V 70 32 60 PAE 36 40 34 35 33 30 10 32 25 0 31 30 30 29 20 28 2 4 dBm 8 2.4 2.8 3.2 3.6 4 4.4 V 5 20 VD PIN Data Book 45 POUT 35 40 0 60 % PAE 55 50 50 31 27 -10 -8 -6 -4 -2 PAE 37 POUT 33 EHT08926 39 dBm POUT 38 90 % 80 PAE 385 V1.0, 2001-01-01 GaAs Components CGY 99 PCN(DCS1800)-Operation Electrical Characteristics (On GSM Application Board) TA = 25 C, ZS = ZL = 50 , duty cycle 12.5%, tON = 577 s, unless otherwise specified. Parameters Symbol Limit Values min. typ. max. Unit Test Conditions Frequency range f 1710 - 1785 MHz - Supply current IDD - 1.6 - A VD = 3.5 V, PIN = + 5 dBm Power Gain G - 29 - dB VD = 3.5 V, PIN = + 5 dBm Output Power PO - 32.1 - dBm VD = 2.8 V, PIN = + 5 dBm Output Power PO - 33.4 - dBm VD = 3.2 V, PIN = + 5 dBm Output Power PO - 34.0 - dBm VD = 3.5 V, PIN = + 5 dBm Overall Power added Efficiency PAE - 45 - % VD = 3.5 V, PIN = + 5 dBm Harmonics 2 f0 3 f0 - dBc - Input VSWR - - VD = 3.5 V or VD = 4.8 V - - - 40 - 40 - - - 2:1 - Load mismatch - Load VSWR = 20 : 1 for all phase No module damage for 10 s. - PIN = 5 dBm, VD 4.6 V, ZS = 50 Stability Load VSWR = 5 : 1 for all phase All spurious output more - than 70 dB below desired signal level. PIN = 5dBm, VD = 4.6 V, ZS = 50 Data Book - 386 V1.0, 2001-01-01 GaAs Components CGY 99 PCN-Measurements (Board Matched for Maximum Output Power) Output Power and PAE vs. Input Power f = 1750 MHz, VG = - 0.58 V, VD = 3.15 V EHT08927 36 dBm POUT 34 Output Power and PAE vs. VD f = 1750 MHz, PIN = 5 dBm, VG = - 0.58 V 80 % PAE 70 EHT08928 38 dBm POUT PAE 37 60 32 30 POUT 40 20 22 10 20 -10 -8 -6 -4 -2 0 35 30 34 20 33 10 30 PAE 24 2 4 0 6 dBm 10 32 PIN Data Book 40 50 28 26 PAE 50 POUT 36 60 % 2.6 3 3.4 3.8 4.2 4.6 V 5 0 VD 387 V1.0, 2001-01-01 GaAs Components CGY 99 PCN-Measurements (Board Matched for Reduced Output Power) Output Power and PAE vs. Input Power f = 1750 MHz, VG = - 0.58 V, VD = 3.15 V EHT08929 36 dBm POUT 34 32 30 POUT 28 Output Power and PAE vs. VD f = 1750 MHz, PIN = 5 dBm, VG = - 0.58 V 80 % PAE 70 EHT08930 38 dBm POUT 37 60 36 50 35 40 34 80 % PAE 70 60 PAE 50 40 POUT PAE 26 30 33 30 24 20 32 20 22 10 31 10 20 -10 -8 -6 -4 -2 0 2 4 0 6 dBm 10 30 PIN Data Book 2.4 2.8 3.2 3.6 4 4.4 V 5 0 VD 388 V1.0, 2001-01-01 GaAs Components CGY 99 VD VG L1 C2 GND L2 C4 C3 L3 R1 C5 CGY 99 C1 C6 C7 RF OUT RF IN BS CGY 99 V1.0 EHT08931 Figure 2 CGY 99 GSM Application Board Boardmaterial: FR4/0.2 mm Boardsize: 38 mm x 19 mm Part List Element Value Part Type Element Value Part Type L1 1.5 nH 0603 C5 12 pF 06031) L2 39 nH 0603 C6 8.2 pF 06031) L3 33 nH 2) C7 1 nF 0603 C1 1 nF 0603 R1 150 0603 C2 1 nF 0603 - - - C3 1 nF 0603 - - - C4 100 nF 0603 - - - 1) 2) 33 nH SMD-Inductor for drain3: Part Number BV1250, distribution by Horst David GmbH, 85375 Neufarn, Germany Phone-No. +49-8165/9548-0, Fax-No. +49-8165/9548-28 For maximum efficiency use high quality capacitors for the output matching: Part Number ACCU-P0603, distribution by AVX GmbH, 85757 Karlsfeld, Germany Phone-No. +49-8131/9004-0 Data Book 389 V1.0, 2001-01-01 GaAs Components CGY 99 VD VG L1 GND L2 C4 C3 L3 C2 R1 C5 CGY 99 C1 C6 C7 RF OUT RF IN BS CGY 99 V1.0 EHT08932 Figure 3 CGY 99 PCN Application Board Boardmaterial: FR4/0.2 mm Boardsize: 38 mm x 19 mm Part List Element Value Part Type Element Value Part Type L1 22 nH 0603 C5 4.7 pF 06031) L2 22 nH 0603 C6 2.0 pF 06031) L3 33 nH 2) C7 1 nF 0603 C1 1 nF 0603 R1 150 0603 C2 56 pF 0603 - - - C3 4.7 pF 06031) - - - C4 100 nF 0603 - - - 1) 2) 33 nH SMD-Inductor for drain3: Part Number BV1250, distribution by Horst David GmbH, 85375 Neufarn, Germany Phone-No. +49-8165/9548-0, Fax-No. +49-8165/9548-28 For maximum efficiency use high quality capacitors for the output matching: Part Number ACCU-P0603, distribution by AVX GmbH, 85757 Karlsfeld, Germany Phone-No. +49-8131/9004-0 Data Book 390 V1.0, 2001-01-01 GaAs Components CGY 99 Package Outlines 0.5 0.1 A A 0.22 0.05 0.08 M 6 max. 0.42 +0.15 -0.1 ABC 4.9 0.25 A B C 1.6 2.4 B +0.08 0.125 -0.05 3 0.1 H 0.09 0.15 max. 0.85 0.1 1.1 max. P-TSSOP-10-2 (Plastic Thin Shrink Small Outline Package) C GPS09230 3 0.1 Index Marking Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Book 391 Dimensions in mm V1.0, 2001-01-01 GaAs MMIC CGY 121 A Data Sheet * * * * * * * Variable gain amplifier (MMIC-Amplifier) for mobile communication Typical Gain Control range over 50 dB Positive Control Voltage 50 input and output matched Low power consumption Operating voltage range: 2.7 to 6 V Frequency range 800 MHz ... 2.5 GHz MW-6 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (taped) Package1) CGY 121 A Y9S Q62702-G66 MW-6 1) Dimensions see Page 402. Maximum Ratings Parameter Symbol Value Unit Drain voltage VD 8 V Neg. supply voltage VG -8 V Pos. control voltage VCON 4 V Channel temperature TCh 150 C Storage temperature range Tstg - 55 ... + 150 C Total power dissipation (TS 81 C)1) Ptot 550 mW 1) Please care for sufficient heat dissipation on the pcb! Thermal Resistance Parameter Symbol Value Unit Channel-soldering point (GND) RthChS 125 K/W Data Book 392 V1.0, 2001-01-01 GaAs Components CGY 121 A Functional Block Diagram VD1 VD2 3 1 1 PIN / -VG 4 POUT VCON 6 Control Circuit 2, 5 GND EHT08626 Figure 1 Pin Configuration Pin No. Symbol Configuration 1 VD2/POUT Drain voltage 2nd stage/RF-0utput 2 RF-GND - 3 VD1 Drain voltage 1st stage 4 VG/PIN Negative voltage at current control circuit (- 4 V)/RF-Input 5 RF-GND - 6 VControl Positive voltage for gain control (0 V ... 3 V) Data Book 393 V1.0, 2001-01-01 GaAs Components CGY 121 A Electrical Characteristics TA = 25 C, f = 900 MHz, VG = - 4 V, RS = RL = 50 ; unless otherwise specified Characteristics Symbol Limit Values min. typ. max. Unit Test Conditions Power Gain G 17 19 - dB VD = 3 V; VCON = 3 V Input return loss RLIN - 11 - dB VD = 3 V; VCON = 3 V Output return loss RLOUT - 10 - dB VD = 3 V; VCON = 3 V Gain Control Range dG 48 54 - dB VCON = 3 V ... 0 V; VD = 3 V 1 dB gain compression P1dB OUT - 14 - dBm VD = 3 V; VCON = 3 V Electrical Characteristics TA = 25 C, f = 1800 MHz, VG = - 4 V, RS = RL = 50 ; unless otherwise specified Characteristics Symbol Limit Values min. typ. max. Unit Test Conditions Power Gain G 16.5 18.5 - dB VD = 3 V; VCON = 3 V Input return loss RLIN - 10 - dB VD = 3 V; VCON = 3 V Output return loss RLOUT - 9.0 - dB VD = 3 V; VCON = 3 V Gain Control Range dG 48 53 - dB VCON = 3 V ... 0 V; VD = 3 V 1 dB gain compression P1dB OUT - 14 - dBm VD = 3 V; VCON = 3 V Data Book 394 V1.0, 2001-01-01 GaAs Components CGY 121 A DC Characteristics Characteristics Symbol Limit Values min. typ. max. Unit Test Conditions Gate current (Pin 4) IG - 1.0 - mA VD = 3 V, VG = - 4 V Control current (Pin 6) IC - 0.5 - mA VD = 3 V, VG = - 4 V, VCON = 0 V ... 3 V Supply current ID - 45 - mA VD = 3 V, VG = - 4 V, VCON = 3 V Electrical Characteristics TA = 25 C, f = 900 MHz, VG = - 4 V, RS = RL = 50 ; unless otherwise specified Characteristics Symbol Limit Values min. typ. max. Unit Test Conditions Power Gain G 17.5 20 - dB VD = 5 V; VCON = 3 V Input return loss RLIN - 11 - dB VD = 5 V; VCON = 3 V Output return loss RLOUT - 10 - dB VD = 5 V; VCON = 3 V Gain Control Range dG 48 54 - dB VCON = 3 V ... 0 V; VD = 5 V 1 dB gain compression P1dB OUT - 15 - dBm VD = 5 V; VCON = 3 V Data Book 395 V1.0, 2001-01-01 GaAs Components CGY 121 A Electrical Characteristics TA = 25 C, f = 1800 MHz, VG = - 4 V, RS = RL = 50 ; unless otherwise specified Characteristics Symbol Limit Values min. typ. max. Unit Test Conditions Power Gain G 17.0 19 - dB VD = 5 V; VCON = 3 V Input return loss RLIN - 10 - dB VD = 5 V; VCON = 3 V Output return loss RLOUT - 8.5 - dB VD = 5 V; VCON = 3 V Gain Control Range dG 48 53 - dB VCON = 3 V ... 0 V; VD = 5 V 1 dB gain compression P1dB OUT - 15 - dBm VD = 5 V; VCON = 3 V Unit Test Conditions DC Characteristics Characteristics Symbol Limit Values min. typ. max. Gate current (Pin 4) IG - 1.3 - mA VD = 5 V, VG = - 4 V Control current (Pin 6) IC - 0.8 - mA VD = 5 V, VG = - 4 V, VCON = 0 V ... 3 V Supply current ID - 48 - mA VD = 5 V, VG = - 4 V, VCON = 3 V Data Book 396 V1.0, 2001-01-01 GaAs Components CGY 121 A VD C3 Input 50 CGY 121 C1 R2 R3 L1 L2 3 2, 5 C2 1 4 C4 Output 50 6 R1 C5 VG Figure 2 GND VControl EHT08627 Application Circuit (f = 900 MHz) Parts List (Frequency: 900 MHz) C1, C2 22 pF L2 27 nH C3, C4 100 nF R1 270 C5 47 nF R2 12 L1 15 nH R3 6.8 Data Book 397 V1.0, 2001-01-01 GaAs Components Input CGY 121 A VG CGY 121 V C1 D R1 C3 CGY 121 L1 C5 R2 L2 VCONTROL R3 C2 Output C4 EHT08628 Figure 3 L1 Coilcraft 0805CS-150XKBC C1 ... C5 Epcos Size 0603 L2 Coilcraft 0805CS-270XMBC R1 Epcos B 54102-A1271-J60 R2 Epcos B 54102-A1120-J60 R3 Epcos Size 0805 Data Book 398 V1.0, 2001-01-01 GaAs Components CGY 121 A VD R2 C3 R3 C4 L1 C6 Input 50 CGY 121 C1 3 2, 5 C2 1 4 Output 50 6 R1 C5 VG Figure 4 GND VControl EHT08629 Application Circuit (f = 1800 MHz) Parts List (Frequency: 1900 MHz) C1, C2 12 pF L1 15 nH C3, C4 100 nF R1 270 C5 47 nF R2 12 C6 1.2 pF R3 2.7 Data Book 399 V1.0, 2001-01-01 GaAs Components Input CGY 121 A VG CGY 121 C1 VD C6 R1 C3 R2 CGY 121 C5 L2 VCONTROL R3 C2 ver 2.2 Output C4 EHT08630 Figure 5 L1 Coilcraft 0805CS-150XKBC R2 Epcos B 54102-A1120-J60 C1 ... C6 Epcos size 0603 R3 Epcos Size 0805 R1 Epcos B 54102-A1271-J60 Data Book 400 V1.0, 2001-01-01 GaAs Components CGY 121 A Gain vs. VControl, Operating Conditions: VD = 3 V, VG = - 4 V, f = 1.9 GHz, PIN = - 10 dBm EHT08631 20 Gain Total Power Dissipation Ptot = f(TS) EHT08632 700 dB Ptot mW 10 600 Ptot max 500 0 400 -10 300 -20 200 -30 -40 100 0 0.5 1 1.5 2 0 2.5 V 3 VCON Data Book 0 50 100 C 150 TS 401 V1.0, 2001-01-01 GaAs Components CGY 121 A Package Outlines MW-6 (Special Package) 1.1 max 2.9 0.1 B 0.6 +0.1 -0.05 5 4 1 2 3 +0.2 acc. to DIN 6784 10max 1.3 0.1 0.3 +0.1 -0.05 6 2.6 max 10max A 0.1 max 0.08...0.15 1.9 M 2... 30 B 0.20 M A GPW05794 0.25 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Book 402 Dimensions in mm V1.0, 2001-01-01 GaAs MMIC CGY 121 B Data Sheet * * * * * * * Variable gain amplifier (MMIC-Amplifier) for mobile communication Gain Control range over 50 dB Positive Control Voltage 50 input and output matched Low power consumption Operating voltage range: 2.7 to 6 V Frequency range 800 MHz ... 2.5 GHz MW-6 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (taped) Package1) CGY 121 B Y0S Q62702-G0071 MW-6 1) Dimensions see Page 413. Maximum Ratings Parameter Symbol Value Unit Drain voltage VD 8 V Neg. supply voltage VG -8 V Pos. control voltage VCON 4 V Channel temperature TCh 150 C Storage temperature range Tstg - 55 ... + 150 C Total power dissipation (TS 81 C)1) Ptot 550 mW 1) Please care for sufficient heat dissipation on the pcb! Thermal Resistance Parameter Symbol Value Unit Channel-soldering point (GND) RthChS 125 K/W Data Book 403 V1.0, 2001-01-01 GaAs Components CGY 121 B Functional Block Diagram VD1 VD2 3 1 1 PIN / -VG 4 POUT VCON 6 Control Circuit 2, 5 GND EHT08626 Figure 1 Pin Configuration Pin No. Symbol Configuration 1 VD2/POUT Drain voltage 2nd stage/RF-0utput 2 RF-GND - 3 VD1 Drain voltage 1st stage 4 VG/PIN Negative voltage at current control circuit (- 4 V)/RF-Input 5 RF-GND - 6 VControl Positive voltage for gain control (0 V ... 3 V) Data Book 404 V1.0, 2001-01-01 GaAs Components CGY 121 B Electrical Characteristics TA = 25 C, f = 900 MHz, VG = - 4 V, RS = RL = 50 ; unless otherwise specified Characteristics Symbol Limit Values min. typ. max. Unit Test Conditions Power Gain G - 20.5 - dB VD = 3 V; VCON = 3 V Input return loss RLIN - 13 - dB VD = 3 V; VCON = 3 V Output return loss RLOUT - 11 - dB VD = 3 V; VCON = 3 V Gain Control Range dG - 54 - dB VCON = 3 V ... 0 V; VD = 3 V 1 dB gain compression P1dB OUT - 15 - dBm VD = 3 V; VCON = 3 V Electrical Characteristics TA = 25 C, f = 1800 MHz, VG = - 4 V, RS = RL = 50 ; unless otherwise specified Characteristics Symbol Limit Values min. typ. max. Unit Test Conditions Power Gain G - 19.5 - dB VD = 3 V; VCON = 3 V Input return loss RLIN - 10 - dB VD = 3 V; VCON = 3 V Output return loss RLOUT - 9 - dB VD = 3 V; VCON = 3 V Gain Control Range dG - 53 - dB VCON = 3 V ... 0 V; VD = 3 V 1 dB gain compression P1dB OUT - 15 - dBm VD = 3 V; VCON = 3 V Data Book 405 V1.0, 2001-01-01 GaAs Components CGY 121 B DC Characteristics Characteristics Symbol Limit Values min. typ. max. Unit Test Conditions Gate current (Pin 4) IG - 1.0 - mA VD = 3 V, VG = - 4 V Control current (Pin 6) IC - 0.5 - mA VD = 3 V, VG = - 4 V, VCON = 0 V ... 3 V Supply current ID - 70 - mA VD = 3 V, VG = - 4 V, VCON = 3 V Electrical Characteristics TA = 25 C, f = 900 MHz, VG = - 4 V, RS = RL = 50 ; unless otherwise specified Characteristics Symbol Limit Values min. typ. max. Unit Test Conditions Power Gain G - 21 - dB VD = 5 V; VCON = 3 V Input return loss RLIN - 13 - dB VD = 5 V; VCON = 3 V Output return loss RLOUT - 11 - dB VD = 5 V; VCON = 3 V Gain Control Range dG - 54 - dB VCON = 3 V ... 0 V; VD = 5 V 1 dB gain compression P1dB OUT - 16 - dBm VD = 5 V; VCON = 3 V Data Book 406 V1.0, 2001-01-01 GaAs Components CGY 121 B Electrical Characteristics TA = 25 C, f = 1800 MHz, VG = - 4 V, RS = RL = 50 ; unless otherwise specified Characteristics Symbol Limit Values min. typ. max. Unit Test Conditions Power Gain G - 20 - dB VD = 5 V; VCON = 3 V Input return loss RLIN - 10 - dB VD = 5 V; VCON = 3 V Output return loss RLOUT - 9 - dB VD = 5 V; VCON = 3 V Gain Control Range dG - 54 - dB VCON = 3 V ... 0 V; VD = 5 V 1 dB gain compression P1dB OUT - 16 - dBm VD = 5 V; VCON = 3 V Unit Test Conditions DC Characteristics Characteristics Symbol Limit Values min. typ. max. Gate current (Pin 4) IG - 1.3 - mA VD = 5 V, VG = - 4 V Control current (Pin 6) IC - 0.8 - mA VD = 5 V, VG = - 4 V, VCON = 0 V ... 3 V Supply current ID - 75 - mA VD = 5 V, VG = - 4 V, VCON = 3 V Data Book 407 V1.0, 2001-01-01 GaAs Components CGY 121 B VD C3 Input 50 CGY 121 C1 R2 R3 L1 L2 3 2, 5 C2 1 4 C4 Output 50 6 R1 C5 VG Figure 2 GND VControl EHT08627 Application Circuit: f = 900 MHz Parts List (f = 900 MHz) C1, C2 22 pF C3, C4 100 nF C5 47 nF L1 15 nH Coilcraft 0805CS-150XKBC L2 27 nH Coilcraft 0805CS-270XMBC R1 270 Epcos B 54102-A1271-J60 R2 12 Epcos B 54102-A1120-J60 R3 6.8 Epcos Size 0805 Data Book C1 ... C5 Epcos Size 0603 408 V1.0, 2001-01-01 GaAs Components Input CGY 121 B VG C1 CGY 121 V D R1 C3 CGY 121 L1 C5 R2 L2 VCONTROL R3 C2 Output C4 EHT08628 Figure 3 Data Book 409 V1.0, 2001-01-01 GaAs Components CGY 121 B VD R2 C3 R3 C4 L1 C6 Input 50 CGY 121 C1 3 2, 5 C2 1 4 Output 50 6 R1 C5 VG Figure 4 GND VControl EHT08629 Application Circuit: f = 1800 MHz Parts List (f = 1800 MHz) C1, C2 12 pF C3, C4 100 nF C5 47 nF C6 1.2 pF L1 15 nH L1 Coilcraft 0805CS-270XKBC R1 270 R1 Epcos B 54102-A1271-J60 R2 12 R2 Epcos B 54102-A1120-J60 R3 6.8 R3 Epcos Size 0805 Data Book C1 ... C6 Epcos size 0603 410 V1.0, 2001-01-01 GaAs Components Input CGY 121 B VG CGY 121 C1 VD C6 R1 C3 R2 CGY 121 C5 L2 VCONTROL R3 C2 ver 2.2 Output C4 EHT08630 Figure 5 Data Book 411 V1.0, 2001-01-01 GaAs Components CGY 121 B Gain vs. VControl, Operating Conditions: VD = 3 V, VG = - 4 V, f = 900 MHz, PIN = - 10 dBm EHT08638 30 Gain Total Power Dissipation Ptot = f(TS) dB Ptot mW 20 600 10 500 0 400 -10 300 -20 200 -30 100 -40 0 0.5 1 1.5 2 0 2.5 V 3 VCON Data Book EHT08632 700 Ptot max 0 50 100 C 150 TS 412 V1.0, 2001-01-01 GaAs Components CGY 121 B Package Outlines MW-6 (Special Package) 1.1 max 2.9 0.1 B 0.6 +0.1 -0.05 5 4 1 2 3 +0.2 acc. to DIN 6784 10max 1.3 0.1 0.3 +0.1 -0.05 6 2.6 max 10max A 0.1 max 0.08...0.15 1.9 M 2... 30 B 0.20 M A GPW05794 0.25 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Book 413 Dimensions in mm V1.0, 2001-01-01 GaAs MMIC CGY 180 Data Sheet * Power amplifier for DECT, PHS, WLL applications * Fully integrated 3 stage amplifier * Operating voltage range: 2.7 to 6 V * Overall power added efficiency 35% * Easy external matching ESD: Electrostatic discharge sensitive device, observe handling precautions! MW-12 Type Marking Ordering Code (taped) Package1) CGY 180 CGY 180 Q68000-A8882 MW-12 1) Plastic body identical to P-SOT-223, dimensions see Page 430. Maximum Ratings Parameter Symbol Value Unit Positive supply voltage VD 8 V Negative supply voltage1) VG -8 V Supply current ID 1.2 A Maximum input power PIN,max 10 dBm Channel temperature TCh 150 C Storage temperature Tstg - 55 ... + 150 C Total power dissipation (TS 81 C) TS: Temperature at soldering point Ptot 2.3 W Pulse peak power PPulse 6.0 W 1) VG = - 8 V only in combination with VTR = 0 V; VG = - 6 V while VTR 0 V Thermal Resistance Parameter Symbol Value Unit Channel-soldering point RthChS 30 K/W Data Book 414 V1.0, 2001-01-01 GaAs Components CGY 180 VTR 1 VG VD1 VD2 2 8 9 VD3 11 Control Circuit PIN 7 11 P OUT 6 GND1 Figure 1 3, 4, 5, 10 GND2 EHT08640 Functional Block Diagram Pin Configuration Pin No. Symbol Configuration 1 VTR Control voltage for transmit (0 V)/receive (open) mode 2 VG Negative voltage at control circuit (- 4 V ... - 8 V) 3 GND2 RF and DC ground of the 2nd and 3rd stage 4 GND2 RF and DC ground of the 2nd and 3rd stage 5 GND2 RF and DC ground of the 2nd and 3rd stage 6 GND1 RF and DC ground of the 1st stage 7 RF IN RF input power 8 VD1 Pos. drain voltage of the 1st stage 9 VD2 Pos. drain voltage of the 2nd stage 10 GND2 RF and DC ground of the 2nd and 3rd stage 11 VD3, POUT Pos. drain voltage of the 3rd stage, RF output power 12 N.C. - Data Book 415 V1.0, 2001-01-01 GaAs Components CGY 180 Control Circuit VG supply: Negative voltage (stabilization is not necessary) in the range of - 4 V ... - 8 V. VTR supply: During transmit operation: 0 V, negative supply current 1 mA ... 2.5 mA. During receive operation: not connected (shut off mode) The operation current ID of CGY 180 is adjusted by the internal control circuit. DC Characteristics Characteristics Symbol Limit Values min. typ. max. Unit Test Conditions VD = 3 V, VG = 0 V, VTR n.c. Drain current stage 1 stage 2 stage 3 IDSS1 150 220 320 mA IDSS2 150 220 320 mA IDSS3 675 1000 1440 mA Drain current with active current control ID 260 450 620 mA VD = 3 V, VG = - 4 V, VTR = 0 V Transconductance (stage 1 - 3) GFS1 70 100 140 mS VD = 3 V, ID = 90 mA GFS2 70 100 140 mS VD = 3 V, ID = 90 mA GFS3 350 500 630 mS VD = 3 V, ID = 400 mA VP - 3.8 - 2.8 - 1.8 V VD = 3 V, ID < 170 A Pinch off voltage (all stages) Data Book 416 V1.0, 2001-01-01 GaAs Components CGY 180 Electrical Characteristics TA = 25 C, f = 1.89 GHz, ZS = ZL = 50 , VD = 3 V, VG = - 4 V, VTR pin connected to ground; unless otherwise specified Characteristics Symbol Limit Values min. typ. max. Unit Test Conditions Supply current IDD - 450 - mA PIN = 0 dBm Negative supply current (transmit operation) IG - 1 2.5 mA - Shut-off current ID - 50 180 A VTR N.C. Negative supply current IG - 10 50 A shut off mode, VTR pin n.c. Gain G 28 30 - dB PIN = - 20 dBm Output Power PO 25.5 27 - dBm PIN = 0 dBm Output Power PO - 30 - dBm VD = 5 V; PIN = 0 dBm Overall Power added Efficiency 30 35 - % PIN = 0 dBm Harmonics 2 f0 3 f0 - - - - - - - 28 - 25 dBc PIN = 0 dBm, VD = 3 V POUT = 27 dBm Harmonics 2 f0 3 f0 - - - - - - - 25 - 22 dBc PIN = 0 dBm, VD = 5 V, POUT = 30 dBm - - 2:1 2.5:1 - VD = 3 V Third order intercept IP3 point - 33.5 - dBm VD = 3 V; pulsed with a Third order intercept IP3 point - Input VSWR Data Book duty cycle of 10%; f1 = 1.8900 GHz; f2 = 1.891728 GHz 38.5 - dBm VD = 4.8 V; pulsed with a duty cycle of 10%; f1 = 1.8900 GHz; f2 = 1.891728 GHz 417 V1.0, 2001-01-01 GaAs Components CGY 180 Electrical Characteristics (cont'd) TA = 25 C, f = 1.89 GHz, ZS = ZL = 50 , VD = 3 V, VG = - 4 V, VTR pin connected to ground; unless otherwise specified Characteristics Symbol Limit Values min. Load mismatch - typ. Unit Test Conditions - PIN = 0 dBm, VD 6 V, ZS = 50 , max. No module damage for 10 s Load VSWR = 20:1 for all phase, VTR = 0 V, VG = - 4 V Stability Data Book - All spurious output more than 60 dB below desired signal level 418 - PIN = 0 dBm, VD = 2 - 7 V, ZS = 50 , Load VSWR = 3:1 for all phase, VTR = 0 V, VG = - 4 V V1.0, 2001-01-01 GaAs Components CGY 180 DC - Characteristics Input Characteristics - Typical Measured Values of Stage 1 and 2, VD1 or VD2 = 3 V ID Input Characteristics - Typical Measured Values of Stage 3, VD3 = 3 V EHT08641 0.26 A ID 0.22 1.1 0.2 1 0.18 0.9 0.16 0.8 0.14 0.12 High Current Medium Current Low Current EHT08643 1.3 A High Current Medium Current Low Current 0.7 0.6 0.1 0.5 0.08 0.4 0.06 0.3 0.04 0.2 0.02 0.1 0 -4 -3.6 -3.2 -2.8 -2.4 -2 -1.6 -1.2 -0.8 0 -4 -3.6 -3.2 -2.8 -2.4 -2 -1.6 -1.2 -0.8 V 0 VG VG Output Characteristics - Typical Measured Values of Stage 1 and 2 ID Output Characteristics - Typical Measured Values of Stage 3 EHT08642 0.22 ID -0.2 V -0.3 V 0.18 EHT08644 1.1 0V A V 0 0V -0.1 V -0.2 V -0.3 V -0.4 V A 0.9 0.16 -0.5 V 0.8 0.14 -0.7 V 0.7 0.12 -1 V 0.6 0.1 -1.2 V 0.5 -1.1 V -1.3 V -1.5 V 0.4 -1.5 V -1.7 V 0.3 -1.7 V -0.8 V -1.3 V 0.08 0.06 -1.9 V -2.1 V -2.3 V -2.5 V 0.04 0.02 0 0 0.8 1.6 2.4 3.2 4 -0.9 V -1.9 V -2.1 V -2.3 V -2.5 V 0.2 0.1 0 4.8 V 6 0 0.8 1.6 2.4 3.2 4 4.8 V 6 VD VD Data Book -0.6 V -0.7 V 419 V1.0, 2001-01-01 GaAs Components CGY 180 Output Power and Power Added Efficiency POUT and PAE vs. PIN, f = 1.89 GHz, VD = 3 V, VG = - 4 V, VTR = 0 V 30 dBm POUT 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 -20 EHT08645 POUT PAE -16 -12 -8 -4 0 dBm 6 Gain vs. Frequency (VG = - 4 V, VTR = 0 V) 36 % 32 PAE 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 EHT08647 33 32 5 V (PIN = -20 dBm) 31 30 3 V (PIN = -20 dBm) 29 5 V (PIN = 0 dBm) 28 27 26 3 V (PIN = 0 dBm) 25 24 23 1500 1600 PIN 1700 1800 MHz 2000 f pulsed mode: tON = 1 ms, duty cycle 10% Data Book 420 V1.0, 2001-01-01 GaAs Components CGY 180 Gain vs. Drain Voltage, f = 1.89 GHz, VD = 3 V, VG = - 4 V, VTR = 0 V EHT08648 33 dB 32 Gain Output Power Control vs. VTR EHT08649 35 dBm POUT 30 31 ID 600 POUT (VD = 4.5 V) POUT (VD = 3 V) 25 PIN = -20 dBm 700 mA 500 30 20 400 15 300 10 200 29 PIN = 0 dBm 28 27 25 2 3 4 5 V 0 6 0 0.5 1 100 1.5 V 2 0 -VTR VD Data Book ID (VD = 4.5 V) ID (VD = 3 V) 5 26 421 V1.0, 2001-01-01 GaAs Components CGY 180 Permissible Pulse Load Ptot_max/Ptot_DC = f(tP) Total Power Dissipation Ptot = f(TS) Ptot 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 EHT08651 10 3 EHT08650 3.0 W tp Ptot max Ptot DC tp D= T T 10 2 D= 5 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 5 0 50 100 10 0 -6 10 C 150 10 -4 10 -3 10 -2 10 -1 s 10 0 tp TS Data Book 10 -5 422 V1.0, 2001-01-01 GaAs Components CGY 180 1 nF VG DECT VTR IN CGY 180 CGY 180 6.8 pF 1.5 pF 1 nF 1 nF VD 1 nF DL 4 MDR 68 pF OUT GND 4.7 F EHT08652 Figure 2 Test Circuit Board Size: 20 x 25 mm; In, Out: 50 The Following Impedances of the Bias Circuit Should be Seen from the CGY 180 Ports (values measured at f = 1.89 GHz) 8 = 0.97 / 96 9 = 0.96 / 142 11 = 0.94 / -134 CGY 180 8 9 11 8 9 11 EHT08653 Figure 3 Data Book 423 V1.0, 2001-01-01 GaAs Components CGY 180 VG 1 nF VTR IN VTR 1 +VD 1 nF 1 nF 68 pF 6.8 pF 1 nF 4.7 F 1.5 pF VG VD1 VD2 VD3 2 8 9 11 Control Circuit PIN 7 CGY 180 11 POUT 6 GND1 OUT 3, 4, 5, 10 GND2 EHT08654 Figure 4 Data Book Principal Circuit 424 V1.0, 2001-01-01 GaAs Components CGY 180 Power Added Efficiency at Different Temperatures* Output Power at Different Temperatures* EHT08655 30 dBm EHT08656 40 % PAE 35 POUT 28 30 26 25 24 20 -20 C 20 C 70 C 22 20 10 18 16 -12 -10 -8 -20 C 20 C 70 C 15 5 -6 -4 -2 0 0 -12 -10 -8 dBm 4 PIN -6 -4 -2 0 dBm 4 PIN * measured with a CGY 180 test circuit board (see Page 423), VD = 3 V, VG = - 4 V, VTR = 0 V Data Book 425 V1.0, 2001-01-01 GaAs Components CGY 180 ATTEN 20 dB RL 26.0 dBm T D R MKR 22.67 dBm 1.88855 GHz 10 dB/ EHT08657 SWEEPTIME 12.0 sec CGY 180 DECT Signal Generator CENTER 1.88875 GHz *RBW 100 kHz *VBW 30 kHz Figure 5 SPAN 17.28 MHz *SWP 12.0 sec Emissions due to Modulation* Spectrum of amplified DECT signal * measured with a CGY 180 test circuit board (see Page 423), VD = 3 V, VG = - 4 V, VTR = 0 V Data Book 426 V1.0, 2001-01-01 GaAs Components CGY 180 Negative Supply Voltage -4 V Pulsed Power Supply Trigger VD = 3 V pulsed with a duty cycle of 10% ton = 1 ms DECT Signal Generator ROHDE&SCHWARZ SME03 VG PIN = 0 dBm IN CGY 180 VD OUT VTR Gate Detay 3 s Gate Length 1 ms Spectrum Analyzer HP 8561E EHT08658 Figure 6 Measurement was done with the Following Equipment Data Book 427 V1.0, 2001-01-01 GaAs Components CGY 180 Application Hints 1. CW - Capability of the CGY 180 1.1 VD = 3 V Proving the possibility of CW - operations there must be known the total power dissipation of the device. This value can be found as a function of the temperature in the data sheet (see Page 422). The CGY 180 has a maximum total power dissipation of Ptot = 2.3 W. As an example we take the operating point with a drain voltage VD = 3 V. The possible ratings of the drain current adjusted by the internal current control of the CGY 180 (VG = - 4 V, VTR = 0 V) are shown in the following table. ID/mA min. typ. max. 325 450 650 At worst case you see a current of ID = 650 mA. So the maximum DC - power can be calculated to: PDC = VD x ID = 1.95 W This value is smaller than 2.3 W and CW - operation is possible. 1.2 x VD = 4 V If you want to use the whole capability of the CGY 180, you must consider the power added efficiency PAE. You want to take an operation point of VD = 4 V. Now there will be a higher current than at VD = 3 V. We assume a current of ID = 650 mA and a PAE = 35%. With these values the DC - power is PDC = 2.6 W. That exceeds the PtotDC of 2.3 W. Decoupling RF-Power from the CGY 180 results in less power dissipation of the device. This is directly correlated with the achieved PAE. To calculate total power dissipation use the formula: PtotDC = PDC x (1 - PAE) Ptot for the used operating point shown above will be Ptot = 2.6 W x (1 - 0.35) = 1.69 W It is possible to use the CGY 180 for CW - operations up to a drain voltage of VD = 4 V, if at the same time a PAE of 35% is achieved. The calculation can be done for any operating point to prove the capability of CW operation. Data Book 428 V1.0, 2001-01-01 GaAs Components CGY 180 2. Not Using the Internal Current Control If you don't want to use the internal current control, it is recommended to connect the negative supply voltage at pin 1 (VTR) instead of pin 2 (VG). 3. Biasing and Use Considerations In all cases, RF input power should not be applied until the bias voltages have been applied, and RF input power should be turned off prior to removing the bias voltages. Bias application should be timed such that gate voltage (VGG) is always applied before the drain voltages (VDD), and when returning to the standby mode, gate voltage should only be removed once the drain voltages have been removed. Data Book 429 V1.0, 2001-01-01 GaAs Components CGY 180 Package Outlines MW-12 (Special Package) 1.6 0.1 6.5 0.2 0.1 max 2.2 0.1 9 8 B 0.5 min +0.2 acc. to DIN 6784 3.5 0.2 10 7 0.3 12 11 15max A 0.4 +0.1 -0.05 1 2 3 4 5 6 0.280.04 7 6 x 0.9 0.25 M 0.25 A Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Book 430 M B GPW05795 5.4 Dimensions in mm V1.0, 2001-01-01 GaAs MMIC CGY 195 Data Sheet * Multiband Power Amplifier [800 ... 3000 MHz] * DECT, PHS, Bluetooth, ISM900, ISM2400, WLL * Single Voltage Supply * Operating voltage range: 2 V to 6 V * POUT = 26.0 dBm at VD = 3.0 V * POUT = 30.0 dBm at VD = 5.0 V * Overall power added efficiency up to 50% * Easy external matching ESD: Electrostatic discharge sensitive device, observe handling precautions! SCT 595 Type Marking Ordering Code (taped) Package CGY 195 Y1S Q68000-A9198 SCT-595 Maximum Ratings Parameter Symbol Value Unit Positive supply voltage VD 6 V Supply current ID 0.7 A Maximum input power Pin_max 20 dBm Channel temperature TCh 150 C Storage temperature Tstg - 55 ... + 150 C Total power dissipation (TS 81 C) TS: Temperature at soldering point Ptot 1.2 W Pulse peak power PPulse 2.0 W Parameter Symbol Value Unit Channel-soldering point RthChS 60 K/W Thermal Resistance Data Book 431 V1.0, 2001-01-01 GaAs Components CGY 195 VD1 3 RF IN / VG 1 4 2, 5 GND Figure 1 2, 5 GND RF OUT / VD2 EHT09125 Functional Block Diagram Pin Configuration Pin No. Symbol Configuration 1 RF IN/VG RF input power + Gate voltage [0 V internal] 2 GND RF and DC ground 3 VD1 Pos. drain voltage of the 1st stage 4 RF OUT/VD2 RF output power/Pos. drain voltage of the 2nd stage 5 GND Data Book RF and DC ground 432 V1.0, 2001-01-01 GaAs Components CGY 195 DC Characteristics Characteristics Symbol Limit Values min. typ. max. Unit Test Conditions Drain current stage 1 - 2 IDSS1 - 65 - mA VD1 = 3 V IDSS2 - 400 - mA VD2 = 3 V Transconductance stage 1 - 2 GFS1 - 110 - mS VD = 3 V, ID = 50 mA GFS2 - 650 - mS VD = 3 V, ID = 300 mA VP - - 1.1 - V VD = 3 V, ID < 170 A Pinch off voltage all stages Determination of Permissible Total Power Dissipation for Continuous and Pulse Operation The dissipated power is the power which remains in the chip and heats the device. It does not contain RF signals which are coupled out consistently. a) Continuous Wave/DC Operation For the determination of the permissible total power dissipation Ptot-DC from the diagram below it is necessary to obtain the temperature of the soldering point TS first. There are two cases: * When RthSA (soldering point to ambient) is not known: Measure TS with a temperature sensor at the leads were the heat is transferred from the device to the board (normally at the widest source or ground lead for GaAs). Use a small sensor of low heat transport, for example a thermoelement (< 1 mm) with thin wires or a temperature indicating paper while the device is operating. * When RthSA is already known: TS = PDiss x RthSA + TA Data Book 433 V1.0, 2001-01-01 GaAs Components CGY 195 Permissible Total Power Dissipation in DC Operation EHT09126 1600 mW Ptot DC 1200 1000 800 600 400 200 0 0 50 100 C 150 TS Temperature of soldering point, TS b) Pulsed Operation For the calculation of the permissible pulse load Ptot-max the following formula is applicable: Ptot-max = Ptot-DC x Pulse factor = Ptot-DC x (Ptot-max/Ptot-DC) Use the values for Ptot-DC as derived from the above diagram and for the pulse factor = Ptot-max/Ptot-DC from the following diagram to get a specific value. Data Book 434 V1.0, 2001-01-01 GaAs Components CGY 195 Pulse Factor EHT09127 10 Ptot max Ptot DC tp tp D= T T D= 5 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 10-6 10-5 10-4 10-3 10-2 10-1 s 100 tp Ptot-max should not exceed the absolute maximum rating for the dissipated power. PPulse = "Pulse peak power" = 2 W c) Reliability Considerations This procedure yields the upper limit for the power dissipation for continuous wave (cw) and pulse applications which corresponds to the maximum allowed channel temperature. For best reliability keep the channel temperature low. The following formula allows to track the individual contributions which determine the channel temperature. TCh = (PDiss x Channel temperature (= junction temperature) Power dissipated in the Rth of device from chip. channel to soldering It does not contain point decoupled RF-power Data Book RthChS) + 435 TS Temperature of soldering point, measured or calculated V1.0, 2001-01-01 GaAs Components CGY 195 Electrical Characteristics, 3.0 V DECT-Application, f = 1.89 GHz TA = 25 C, f = 1.89 GHz, ZS = ZL = 50 , pulsed mode: T = 417 s, duty cycle 12.5%; unless otherwise specified Characteristics Symbol Limit Values min. typ. max. Unit Test Conditions Supply current IDD - 330 - mA VD = 3.3 V; PIN = + 3 dBm Supply current IDD - 500 - mA VD = 3.3 V; PIN = - 10 dBm Gain G 24 27 29 dB VD = 3.3 V; PIN = - 10 dBm Output Power PO 25 26.5 27.5 dBm VD = 3.3 V; PIN = + 3 dBm Overall Power added Efficiency PAE 35 42 - % VD = 3.3 V; PIN = + 3 dBm Supply current IDD - 330 - mA VD = 4.8 V; PIN = 6 dBm Supply current IDD - 500 - mA VD = 4.8 V; PIN = - 10 dBm Gain G - 26 - dB VD = 4.8 V; PIN = - 10 dBm Output Power PO 27 28 30 dBm VD = 4.8 V; PIN = 6 dBm Overall Power added Efficiency PAE - 40 - % VD = 4.8 V; PIN = 6 dBm Off Isolation -S21 - 28 - dB VD = 0 V; PIN = 3 dBm Harmonics 2 f0 3 f0 - dBc VD = 3.3 V PIN = + 3 dBm; POUT = 26.5 dBm Harmonics 2 f0 3 f0 - dBc VD = 4.8 V PIN = + 5 dBm; POUT = 28 dBm Input VSWR - dB VD = 3 V or VD = 4.8 V Data Book - - - 30 - 40 - - - - - 35 - 40 - - - 2:1 - 436 V1.0, 2001-01-01 GaAs Components CGY 195 Electrical Characteristics, 3.0 V DECT-Application, f = 1.89 GHz (cont'd) TA = 25 C, f = 1.89 GHz, ZS = ZL = 50 , pulsed mode: T = 417 s, duty cycle 12.5%; unless otherwise specified Characteristics Symbol Limit Values min. Load mismatch - typ. Unit Test Conditions - PIN = 3 dBm, VD 3.3 V, ZS = 50 max. No module damage for 10 s Load VSWR = 20:1 for all phase Load mismatch - No module damage for 10 s - PIN = 6 dBm, VD 5.0 V, ZS = 50 Load VSWR = 20:1 for all phase Stability - All spurious output more - than 70 dB below desired signal level. PIN = 3 dBm, VD = 3.3 V, ZS = 50 Load VSWR = 3:1 for all phase Stability - All spurious output more - than 70 dB below desired signal level. PIN = 6 dBm, VD = 5.0 V, ZS = 50 Load VSWR = 3:1 for all phase Data Book 437 V1.0, 2001-01-01 GaAs Components CGY 195 Output Power and Power Added Efficiency, pulsed mode: T = 417 s, duty cycle 12.5% EHT09128 30 dBm POUT POUT 25 50 % 45 PAE 40 35 30 20 25 PAE 15 20 15 10 10 5 5 -5 -3 -1 1 3 5 dBm 8 0 PIN Microwave Harmonica (tm) v5.0 COMPACT SOFTWARE CGY 195 DECT - Application Ckt: neu Y1 dB(S11) 30.0 20.0 Ckt: neu Y1 dB(S22) 10.0 Ckt: neu Y1 dB(S21) 0.0 Y1 Dec-05-97 13:25:54 -10.0 Ckt: neu Y1 dB(S12) -20.0 -30.0 -40.0 -50.0 0.0 0.5 1.0 1.5 FREQ [GHZ] 2.0 2.5 3.0 EHT09129 Figure 2 S-Parameter, 3 V DECT-Application, f = 1.89 GHz pulsed mode: T = 417 s, Duty Cycle 12.5%, PIN = 3 dBm Data Book 438 V1.0, 2001-01-01 GaAs Components CGY 195 Infineon CGY 195 OUT V 2.2 L1 1) C4 C1 C4 2) L2 3) C2 R1 C3 IN VDD 1) Figure 3 l = 1.2 mm w = 0.95 mm 2) l = 2.4 mm w = 0.3 mm 3) l = 1.4 mm w = 0.8 mm EHT09130 Test Board Layout (3 V DECT-Application, f = 1.89 GHz) Substrat: Epoxy, Thickness: 0.25 mm Element Values C1 1n R1 2R7 C2 2p2 L1 2n7 C3 100n L2 10n C4 470p Data Book 439 V1.0, 2001-01-01 GaAs Components CGY 195 Electrical Characteristics, ISM 2.4 GHz Application TA = 25 C, f = 2.40 GHz, ZS = ZL = 50 , pulsed mode: T = 417 s, duty cycle 10%, unless otherwise specified Characteristics Symbol Limit Values min. typ. max. Unit Test Conditions Supply current IDD - 370 - mA VD = 3.3 V; PIN = + 3 dBm Supply current IDD - 500 - mA VD = 3.3 V; PIN = - 10 dBm Gain G - 26 - dB VD = 3.3 V; PIN = - 10 dBm Output Power PO - 26.5 - dBm VD = 3.3 V; PIN = + 5 dBm Overall Power added Efficiency PAE - 37 - % VD = 3.3 V; PIN = + 5 dBm Supply current IDD - 360 - mA VD = 4.8 V; PIN = 5 dBm Supply current IDD - 500 - mA VD = 4.8 V; PIN = - 10 dBm Gain G - 27 - dB VD = 4.8 V; PIN = - 10 dBm Output Power PO - 28 - dBm VD = 4.8 V; PIN = 5 dBm Overall Power added Efficiency PAE - 36 - % VD = 4.8 V; PIN = 5 dBm Off Isolation -S21 - 28 - dB VD = 0 V; PIN = 5 dBm Load mismatch - No module damage for - 10 s PIN = 5 dBm, VD 3.3 V, ZS = 50 Load VSWR = 20:1 for all phase Data Book 440 V1.0, 2001-01-01 GaAs Components CGY 195 Electrical Characteristics, ISM 2.4 GHz Application (cont'd) TA = 25 C, f = 2.40 GHz, ZS = ZL = 50 , pulsed mode: T = 417 s, duty cycle 10%, unless otherwise specified Characteristics Symbol Limit Values min. Load mismatch - typ. Unit Test Conditions max. No module damage for - 10 s PIN = 5 dBm, VD 5.0 V, ZS = 50 Load VSWR = 20:1 for all phase Stability - All spurious output - more than 60 dB below desired signal level. PIN = 5 dBm, VD = 3.3 V, ZS = 50 Load VSWR = 3:1 for all phase Stability Data Book - All spurious output - more than 60 dB below desired signal level. 441 PIN = 5 dBm, VD = 5.0 V, ZS = 50 Load VSWR = 3:1 for all phase V1.0, 2001-01-01 GaAs Components CGY 195 Microwave Harmonica (tm) v5.0 COMPACT SOFTWARE CGY 195 2.4 GHz - Application Ckt: neu Y1 dB(S11) 30.0 20.0 Ckt: neu Y1 dB(S22) 10.0 Ckt: neu Y1 dB(S21) 0.0 Y1 Dec-05-97 13:36:32 -10.0 Ckt: neu Y1 dB(S12) -20.0 -30.0 -40.0 -50.0 1.0 1.25 1.5 1.75 2.0 2.25 FREQ [GHZ] 2.5 2.75 3.0 EHT09131 Figure 4 Data Book S-Parameter, ISM 2.4 GHz Application pulsed mode: T = 417 s, Duty Cycle 10%, PIN = 3 dBm 442 V1.0, 2001-01-01 GaAs Components CGY 195 Infineon CGY 195 OUT V 2.2 L1 C4 C2 C1 C4 L2 C3 R1 IN VDD EHT09132 Figure 5 Test Board Layout (ISM 2.4 GHz Application) Substrat: Epoxy, Thickness: 0.25 mm Element Values C1 1n R1 2R7 C2 2p2 L1 1n5 C3 100n L2 10n C4 470p Data Book 443 V1.0, 2001-01-01 GaAs Components CGY 195 Electrical Characteristics, ISM 900 MHz Application TA = 25 C, f = 900 MHz, ZS = ZL = 50 , CW mode, unless otherwise specified Characteristics Symbol Limit Values min. typ. max. Unit Test Conditions Supply current IDD - 330 - mA VD = 3.3 V; PIN = + 0 dBm Supply current IDD - 500 - mA VD = 3.3 V; PIN = - 10 dBm Gain G - 29 - dB VD = 3.3 V; PIN = - 10 dBm Output Power PO - 26.5 - dBm VD = 3.3 V; PIN = + 0 dBm Overall Power added Efficiency PAE - 42 - % VD = 3.3 V; PIN = 0 dBm 03/08/99 Ansoft Corporation - Microwave Harmonica (tm) v7.5 15:26:41 mess Y1 dB(S11(ckt=mess)) 30.00 33.00 25.00 30.00 20.00 27.00 15.00 24.00 10.00 21.00 5.00 Y2 Y1 C:\Daten\Sicherung\Serenade\Spar.ckt mess Y2 dB(S21(ckt=mess)) mess Y1 dB(S22(ckt=mess)) 18.00 0.00 15.00 -5.00 12.00 -10.00 9.00 -15.00 6.00 -20.00 3.00 0.10 0.40 0.70 1.00 1.30 1.60 1.90 2.20 2.50 2.80 3.10 FREQ [GHz] EHT09133 Figure 6 Data Book S-Parameter, ISM 900 MHz Application CW-Mode, VD = 3.3 V, PIN = 0 dBm 444 V1.0, 2001-01-01 GaAs Components CGY 195 Infineon CGY 195 OUT V 2.2 L1 C4 L3 C4 C2 L2 C1 R1 C3 IN VDD EHT09134 Figure 7 Test Board Layout (ISM 900 MHz Application) Substrat: Epoxy, Thickness: 0.25 mm Element Values C1 100 nF R1 2R7 C2 5p6 L1 10 nH C3 100 nF L2 18 nH C4 470 pF L3 8n2 Data Book 445 V1.0, 2001-01-01 GaAs Components CGY 195 Package Outlines SCT-595 (Special Package) 2.9 0.2 B (2.2) 1.2 +0.1 -0.05 1.1 max (0.3) 2 3 0.3 +0.1 -0.05 0.15 +0.1 -0.06 0.6 +0.1 -0.05 0.20 0.95 1.9 0.25 M B 1) A Contour of slot depends on profile of gull-wing lead form Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Book M 446 A GPW05997 1) 1 10max +0.2 acc. to DIN 6784 4 (0.23) (0.13) 5 10max 1.6 0.1 0.1 max 2.6 max 0.25 min (0.4) 1) Dimensions in mm V1.0, 2001-01-01 GaAs MMIC CGY 196 Data Sheet * * Multiband Power Amplifier [800 ... 3500 MHz] DECT, PHS, PWT, Bluetooth, ISM900, ISM2400, WLL * Single Voltage Supply * Operating voltage range: 2 V to 6 V * POUT = 25.5 dBm at VD = 2.4 V * POUT = 26.0 dBm at VD = 3.0 V * POUT = 29.0 dBm at VD = 5.0 V * Overall power added efficiency up to 50% * Easy external matching ESD: Electrostatic discharge sensitive device, observe handling precautions! SCT-598 Type Marking Ordering Code (taped) Package CGY 196 D6s Q62702-G0080 SCT-598 Maximum Ratings Parameter Symbol Value Unit Positive supply voltage VD 6 V Supply current ID 1.0 A Maximum input power PIN_max 20 dBm Channel temperature TCh 150 C Storage temperature Tstg - 55 ... + 150 C Total power dissipation (TS 80 C) TS: Temperature at soldering point Ptot 1.0 W Pulse peak power PPulse 2.0 W Data Book 447 V1.0, 2001-01-01 GaAs Components CGY 196 Thermal Resistance Parameter Symbol Value Unit Channel-soldering point RthChS 70 K/W VD1 VD2 RF IN / VG RF OUT / VD3 GND Figure 1 GND GND EHT08746 Functional Block Diagram Pin Configuration Pin No. Symbol Configuration 1 RF IN/VG RF input power + Gate voltage [0 V internal] 2 GND RF and DC ground 3 VD2 Pos. drain voltage of the 2nd stage 4 N.C. Not connected 5 N.C. Not connected 6 RF OUT/VD3 RF output power/Pos. drain voltage of the 3rd stage 7 GND RF and DC ground 8 VD1 Pos. drain voltage of the 1st stage Data Book 448 V1.0, 2001-01-01 GaAs Components CGY 196 DC Characteristics Characteristics Drain current stage 1 - 3 Transconductance stage 1 - 3 Symbol Limit Values Unit Test Conditions min. typ. max. IDSS1 30 45 75 mA VD1 = 3 V IDSS2 45 65 110 mA VD2 = 3 V IDSS3 230 340 515 mA VD3 = 3 V GFS1 50 90 130 mS VD = 3 V, ID = 50 mA GFS2 80 130 170 mS VD = 3 V, ID = 300 mA GFS3 150 220 300 mS VD = 3 V, ID = 300 mA Determination of Permissible Total Power Dissipation for Continuous and Pulse Operation The dissipated power is the power which remains in the chip and heats the device. It does not contain RF signals which are coupled out consistently. a) Continuous Wave/DC Operation For the determination of the permissible total power dissipation Ptot-DC from the diagram below it is necessary to obtain the temperature of the soldering point TS first. There are two cases: * When RthSA (soldering point to ambient) is not known: Measure TS with a temperature sensor at the leads were the heat is transferred from the device to the board (normally at the widest source or ground lead for GaAs). Use a small sensor of low heat transport, for example a thermoelement (< 1 mm) with thin wires or a temperature indicating paper while the device is operating. * When RthSA is already known: TS = PDiss x RthSA + TA Data Book 449 V1.0, 2001-01-01 GaAs Components CGY 196 Permissible Total Power Dissipation in DC Operation EHT08747 1600 mW Ptot DC 1200 1000 800 600 400 200 0 0 50 100 C 150 TS b) Pulsed Operation For the calculation of the permissible pulse load Ptot-max the following formula is applicable: Ptot-max = Ptot-DC x Pulse factor = Ptot-DC x (Ptot-max/Ptot-DC) Use the values for Ptot-DC as derived from the above diagram and for the pulse factor = Ptot-max/Ptot-DC from the following diagram to get a specific value. Data Book 450 V1.0, 2001-01-01 GaAs Components CGY 196 Pulse Factor EHT08748 10 1 tp Ptot max Ptot DC tp D= T T D= 5 10 0 -6 10 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 tp Ptot-max should not exceed the absolute maximum rating for the dissipated power PPulse = "Pulse peak power" = 2 W c) Reliability Considerations This procedure yields the upper limit for the power dissipation for continuous wave (cw) and pulse applications which corresponds to the maximum allowed channel temperature. For best reliability keep the channel temperature low. The following formula allows to track the individual contributions which determine the channel temperature. TCh = (PDiss/Pulse Factor x Channel temperature Power dissipated in the Rth of device from channel to soldering chip, divided by the applicable pulse factor point (= 1 for DC and CW). It does not contain decoupled RF-power (= junction temperature) Data Book RthChS) + 451 TS Temperature of soldering point, measured or calculated V1.0, 2001-01-01 GaAs Components CGY 196 Electrical Characteristics, 3.0 V DECT-Application, f = 1.89 GHz TA = 25 C, f = 1.89 GHz, ZS = ZL = 50 , unless otherwise specified Characteristics Symbol Limit Values min. typ. max. Unit Test Conditions Supply current IDD - 300 500 mA VD = 3.0 V; PIN = + 0 dBm Supply current IDD - 450 700 mA VD = 3.0 V; PIN = - 10 dBm Gain G 27 30 33 dB VD = 3.0 V; PIN = - 10 dBm Output Power PO 24.0 26.0 27.0 dBm VD = 3.0 V; PIN = 0 dBm Overall Power added Efficiency PAE 35 45 - % VD = 3.0 V; PIN = + 0 dBm Overall Power added Efficiency PAE - 50 - % VD = 3.0 V; PIN = 3 dBm Supply current IDD - 450 - mA VD = 4.8 V; PIN = - 10 dBm Supply current IDD - 330 600 mA VD = 4.8 V; PIN = 0 dBm Gain G - 32 - dB VD = 4.8 V; PIN = - 10 dBm Output Power PO 26.5 28 30 dBm VD = 4.8 V; PIN = 3 dBm Overall Power added Efficiency PAE 30 40 - % VD = 4.8 V; PIN = 3 dBm Overall Power added Efficiency PAE - 45 - % VD = 4.8 V; PIN = 5 dBm Off Isolation -S21 - 40 - dB VD = 0 V; PIN = 0 dBm Load mismatch - No module damage for 10 s - PIN = 0 dBm, VD 3.6 V, ZS = 50 Load VSWR = 20:1 for all phase Data Book 452 V1.0, 2001-01-01 GaAs Components CGY 196 Electrical Characteristics, 3.0 V DECT-Application, f = 1.89 GHz (cont'd) TA = 25 C, f = 1.89 GHz, ZS = ZL = 50 , unless otherwise specified Characteristics Symbol Limit Values min. Load mismatch - typ. Unit Test Conditions - PIN = 3 dBm, VD 5.0 V, ZS = 50 max. No module damage for 10 s Load VSWR = 20:1 for all phase Stability - All spurious output more - than 70 dB below desired signal level. PIN = 0 dBm, VD 3.6 V, ZS = 50 Load VSWR = 10:1 for all phase Stability - All spurious output more - than 70 dB below desired signal level. PIN = 3 dBm, VD 5.0 V, ZS = 50 Load VSWR = 10:1 for all phase Data Book 453 V1.0, 2001-01-01 GaAs Components CGY 196 Electrical Characteristics (3.0 V DECTApplication, f = 1.89 GHz) Output Power and Power Added Efficiency, VD = 3.3 V, duty cycle 10% 27 dBm POUT 26 EHT08749 POUT 25 Output Power and Power Added Efficiency, VD = 5.0 V, duty cycle 10% 60 % 55 PAE 30 dBm POUT 29 EHT08750 POUT 60 % 55 PAE 50 28 45 27 23 40 26 40 22 35 25 35 21 30 24 30 20 25 23 25 19 20 22 20 18 15 21 15 24 PAE 17 10 -11 -9 -7 -5 -3 -1 1 3 5 dBm 10 50 45 PAE 20 10 -11 -9 -7 -5 -3 -1 1 3 5 dBm 10 PIN PIN pulsed mode: T = 417 s, duty cycle 12.5% Data Book 454 V1.0, 2001-01-01 GaAs Components CGY 196 30.0 10.0 20.0 0.0 10.0 -10.0 0.0 -20.0 -10.0 -20.0 Y1 dB(S12) Y2 Microwave Harmonica (tm) v5.0 COMPACT SOFTWARE CGY 196 Vd = 3.3 V Jun-09-98 16:37:43 Ckt neu Y2 dB(S11) Ckt neu Y2 dB(S22) Ckt neu Y2 dB(S21) -30.0 Ckt neu Y1 dB(S12) -40.0 -30.0 -50.0 -40.0 -60.0 -50.0 -70.0 0.0 0.5 1.0 1.5 FREQ [GHZ] 2.0 2.5 3.0 EHT08751 Figure 2 S-Parameter, pulsed mode: T = 417 s, Duty Cycle 12.5%, PIN = 0 dBm, VD = 3.3 V Data Book 455 V1.0, 2001-01-01 GaAs Components CGY 196 POUT, ID = f (VD), PIN = 0 dBm (pulsed mode: T = 417 s, POUT vs. T, VD = 3.0 V, duty cycle = 10%, PIN = 0 dBm duty cycle 12.5%) EHT08752 400 mA I 350 40 dBm 30 EHT08755 29 dBm POUT POUT VD = 4.8 V POUT 300 20 250 28 10 I 200 0 150 -10 27 VD = 3 V 100 -20 50 -30 0 0 1 2 3 4 V 5 26 -40 25 -40 -20 0 20 40 60 VD Harmonic Distortion, VD = 3.3 V EHT08754 -30 dBc -35 -40 Distortion Distortion Harmonic Distortion, VD = 4.8 V EHT08753 -30 dBc -35 C 100 T 3f -45 -40 -45 3f -50 -50 -55 -55 2f 2f -60 -60 -65 -65 -70 -10 -8 -6 -4 -2 0 -70 -10 2 dBm 5 -6 -4 -2 0 2 dBm 5 PIN PIN Data Book -8 456 V1.0, 2001-01-01 GaAs Components CGY 196 CGY 196 IN V 1.1 C6 C1 C3 R1 D1 C2 N.C. C4 N.C. D3 C3 C5 D2 C1 = C2 = C3 = 100 nF OUT C4 = 3.3 pF C5 = C6 = 680 pF R 1 = 2.7 EHT08756 Figure 3 Data Book Test Board Layout (3.0 V DECT-Application, f = 1.89 GHz) 457 V1.0, 2001-01-01 GaAs Components CGY 196 Electrical Characteristics 2.4 V DECT-Application f = 1.89 GHz TA = 25 C, f = 1.89 GHz, ZS = ZL = 50 , unless otherwise specified Characteristics Symbol Limit Values min. typ. max. Unit Test Conditions Supply current IDD - 340 - mA VD = 2.4 V; PIN = + 0 dBm Supply current IDD - 450 - mA VD = 2.4 V; PIN = - 10 dBm Output Power PO - 25.5 - dBm VD = 2.4 V; PIN = 0 dBm Overall Power added Efficiency PAE - 44 - % VD = 2.4 V; PIN = + 0 dBm Supply current IDD - 320 - mA VD = 2.2 V; PIN = + 0 dBm Supply current IDD - 450 - mA VD = 2.2 V; PIN = - 10 dBm Output Power PO - 24.7 - dBm VD = 2.2 V; PIN = 0 dBm Overall Power added Efficiency PAE - 42 - % VD = 2.2 V; PIN = + 0 dBm Supply current IDD - 380 - mA VD = 3.0 V; PIN = + 0 dBm Supply current IDD - 450 - mA VD = 3.0 V; PIN = - 10 dBm Output Power PO - 27.0 - dBm VD = 3.0 V; PIN = 0 dBm Overall Power added Efficiency PAE - 44 - % VD = 3.0 V; PIN = + 0 dBm Off Isolation -S21 - 35 - dB VD = 0 V; PIN = 0 dBm Load mismatch - No module damage for - 10 s PIN = 0 dBm, VD 3.0 V, ZS = 50 Load VSWR = 20:1 for all phase Data Book 458 V1.0, 2001-01-01 GaAs Components CGY 196 Electrical Characteristics 2.4 V DECT-Application f = 1.89 GHz (cont'd) TA = 25 C, f = 1.89 GHz, ZS = ZL = 50 , unless otherwise specified Characteristics Symbol Limit Values min. Load mismatch - typ. Unit Test Conditions max. No module damage for - 10 s PIN = 3 dBm, VD 5.0 V, ZS = 50 Load VSWR = 20:1 for all phase Stability - Stability All spurious output - more than 70 dB below desired signal level. - All spurious output - more than 70 dB below desired signal level. PIN = 0 dBm, VD = 3.0 V, ZS = 50 Load VSWR = 10:1 for all phase PIN = 3 dBm, VD = 5.0 V, ZS = 50 Load VSWR = 10:1 for all phase POUT, ID = f (VD), PIN = 0 dBm (pulsed mode: T = 417 s, duty cycle 12.5%), 2.4 V Application EHT08757 450 mA I 400 350 20 POUT I 300 40 dBm P 30 OUT 10 250 0 200 -10 150 -20 100 -30 50 -40 0 0 1 2 3 4 V 5 -50 VD Data Book 459 V1.0, 2001-01-01 GaAs Components CGY 196 CGY 196 IN V 1.1 C6 C1 C3 R1 D1 C2 C4 N.C. N.C. D3 C5 D2 C1 = C2 = C3 = 100 nF C3 OUT C4 = 3.3 pF C5 = C6 = 680 pF R 1 = 2.7 EHT08758 Figure 4 Data Book Test Board Layout (2.4 V DECT-Application, f = 1.89 GHz) 460 V1.0, 2001-01-01 GaAs Components CGY 196 Electrical Characteristics (2.4 GHz ISM-Application) TA = 25 C, f = 2.40 GHz, ZS = ZL = 50 , unless otherwise specified Characteristics Symbol Limit Values min. typ. max. Unit Test Conditions Supply current IDD - 300 - mA VD = 3.3 V; PIN = + 3 dBm Supply current IDD - 450 - mA VD = 3.3 V; PIN = - 10 dBm Output Power PO - 26.0 - dBm VD = 3.3 V; PIN = + 3 dBm Overall Power added Efficiency PAE - 40 - % VD = 3.3 V; PIN = + 3 dBm Off Isolation -S21 - 34 - dB VD = 0 V; PIN = 3 dBm Supply current IDD - 300 - mA VD = 4.8 V; PIN = + 6 dBm Supply current IDD - 450 - mA VD = 4.8 V; PIN = - 10 dBm Output Power PO - 27.5 - dBm VD = 4.8 V; PIN = + 6 dBm Overall Power added Efficiency PAE - 40 - % VD = 4.8 V; PIN = + 6 dBm Off Isolation -S21 - 34 - dB VD = 0 V; PIN = 3 dBm Load mismatch - No module damage for 10 s - PIN = 3 dBm, VD 3.6 V, ZS = 50 Load VSWR = 20:1 for all phase Load mismatch - No module damage for 10 s - PIN = 6 dBm, VD 5.0 V, ZS = 50 Load VSWR = 20:1 for all phase Data Book 461 V1.0, 2001-01-01 GaAs Components CGY 196 Electrical Characteristics (2.4 GHz ISM-Application) (cont'd) TA = 25 C, f = 2.40 GHz, ZS = ZL = 50 , unless otherwise specified Characteristics Symbol Limit Values Unit Test Conditions All spurious output more than 70 dB below desired signal level - PIN = 3 dBm, VD = 3.6 V, ZS = 50 All spurious output more than 70 dB below desired signal level - min. Stability - Stability - typ. max. Load VSWR = 10:1 for all phase PIN = 6 dBm, VD = 5.0 V, ZS = 50 Load VSWR = 10:1 for all phase Electrical Characteristics (2.4 GHz ISM-Application) POUT, PAE = f (PIN), VD = 3.3 V, f = 2.4 GHz (pulsed mode: T = 417 s, duty cycle 12.5% EHT08759 50 dBm, % POUT , PAE 40 PAE 30 POUT 20 10 0 -10 -5 0 5 dBm 10 PIN Data Book 462 V1.0, 2001-01-01 GaAs Components CGY 196 03/09/99 11:15:08 Ansoft Corporation - Microwave Harmonica (tm) v7.5 Y1 mess dB(S11(ckt=mess)) 30.00 35.00 25.00 30.00 20.00 25.00 15.00 20.00 10.00 15.00 5.00 Y2 Y1 C:\Daten\Sicherung\Serenade\Spar.ckt Y2 mess dB(S21(ckt=mess)) Y1 mess dB(S22(ckt=mess)) 10.00 0.00 5.00 -5.00 0.00 -10.00 -5.00 -15.00 -10.00 -20.00 -15.00 0.10 0.40 0.70 1.00 1.30 1.60 1.90 FREQ [GHz] 2.20 2.50 2.80 3.10 EHT08760 Figure 5 Data Book S-Parameter VD = 3.3 V, PIN = 0 dBm (pulsed mode: T = 417 s, duty cycle 12.5%) 463 V1.0, 2001-01-01 GaAs Components CGY 196 CGY 196 IN V 1.1 C6 C1 C3 R1 L1 D1 C4 C2 N.C. C3 N.C. D3 C5 OUT D2 C1 = C2 = C3 = 100 nF C4 = 1.8 pF C5 = C6 = 1 nF R 1 = 2.7 L1 = 3.9 nH EHT08761 Figure 6 Data Book Test Board Layout (2.4 GHz ISM - Application) 464 V1.0, 2001-01-01 GaAs Components CGY 196 Electrical Characteristics (900 MHz ISM-Application) TA = 25 C, f = 0.90 GHz, ZS = ZL = 50 , unless otherwise specified Characteristics Symbol Limit Values min. typ. max. Unit Test Conditions Supply current IDD - 300 - mA VD = 3.3 V; PIN = + 3 dBm Supply current IDD - 450 - mA VD = 3.3 V; PIN = - 10 dBm Output Power PO - 26.0 - dBm VD = 3.3 V; PIN = + 3 dBm Overall Power added Efficiency PAE - 40 - % VD = 3.3 V; PIN = + 3 dBm Off Isolation -S21 - 34 - dB VD = 0 V; PIN = 3 dBm Supply current IDD - 300 - mA VD = 4.8 V; PIN = + 6 dBm Supply current IDD - 450 - mA VD = 4.8 V; PIN = - 10 dBm Output Power PO - 27.5 - dBm VD = 4.8 V; PIN = + 6 dBm Overall Power added Efficiency PAE - 40 - % VD = 4.8 V; PIN = + 6 dBm Off Isolation -S21 - 34 - dB VD = 0 V; PIN = 3 dBm Data Book 465 V1.0, 2001-01-01 GaAs Components CGY 196 Electrical Characteristics (900 MHz ISM-Application) (cont'd) TA = 25 C, f = 0.90 GHz, ZS = ZL = 50 , unless otherwise specified Characteristics Symbol Limit Values min. Load mismatch - typ. Unit Test Conditions - PIN = 3 dBm, VD 3.6 V, ZS = 50 max. No module damage for 10 s Load VSWR = 20:1 for all phase Load mismatch - No module damage for 10 s - PIN = 6 dBm, VD 5.0 V, ZS = 50 Load VSWR = 20:1 for all phase Stability Stability Data Book - - All spurious output more than 70 dB below desired signal level - All spurious output more than 70 dB below desired signal level - 466 PIN = 3 dBm, VD = 3.6 V, ZS = 50 Load VSWR = 10:1 for all phase PIN = 6 dBm, VD = 5.0 V, ZS = 50 Load VSWR = 10:1 for all phase V1.0, 2001-01-01 GaAs Components CGY 196 Electrical Characteristics (900 MHz ISM-Application) POUT, PAE = f (PIN), VD = 3.5 V, f = 900 MHz [CW]) POUT, PAE = f (VD), PIN = 0 dBm, f = 900 MHz [CW]) EHT08762 50 dBm, % POUT , PAE 40 35 35 30 30 POUT 25 25 20 20 15 15 10 10 5 5 -8 -6 -4 -2 0 0 2 dBm 5 PIN Data Book PAE PAE 40 0 -10 EHT08763 50 dBm, % POUT , PAE POUT 2 2.4 2.8 3.2 3.6 V 4 Vd 467 V1.0, 2001-01-01 GaAs Components CGY 196 07/15/99 14:51:02 Ansoft Corporation - Microwave Harmonica (tm) v7.5 mess Y1 dB(S11(ckt=mess)) 25.00 35.00 20.00 30.00 15.00 25.00 10.00 20.00 5.00 15.00 0.00 Y2 Y1 C:\Daten\Sicherung\Serenade\SPAR_ku.ckt mess Y1 dB(S22(ckt=mess)) mess Y2 dB(S21(ckt=mess)) 10.00 -5.00 5.00 -10.00 0.00 -15.00 -5.00 -20.00 -10.00 -25.00 -15.00 0.50 0.60 0.70 0.80 0.90 1.00 1.10 FREQ [GHz] 1.20 1.30 1.40 1.50 EHT08764 Figure 7 S-Parameter, VD = 3.5 V, PIN = - 5.5 dBm [cw mode] Ansoft Corporation - Microwave Harmonica (tm) v7.5 07/15/99 15:33:21 mess Y1 dB(S11(ckt=mess)) 25.00 35.00 20.00 30.00 15.00 25.00 10.00 20.00 5.00 15.00 0.00 Y2 Y1 C:\Daten\Sicherung\Serenade\SPAR_ku.ckt mess Y1 dB(S22(ckt=mess)) mess Y2 dB(S21(ckt=mess)) 10.00 -5.00 5.00 -10.00 0.00 -15.00 -5.00 -20.00 -10.00 -25.00 -15.00 0.50 0.60 0.70 0.80 0.90 1.00 1.10 FREQ [GHz] 1.20 1.30 1.40 1.50 EHT08765 Figure 8 Data Book S-Parameter, VD = 3.5 V, PIN = - 0.5 dBm [cw mode] 468 V1.0, 2001-01-01 GaAs Components CGY 196 CGY 196 IN V 1.1 C6 C1 R2 R1 D1 C7 N.C. N.C. D3 C2 C4 C5 D2 C1 = 47 pF C2 = 47 pF C3 OUT C3 = 100 nF C4 = 5.6 pF C5 = C6 = 680 pF C7 = 1 pF R 1 = 2.7 R 2 = 10 EHT08766 Figure 9 Data Book Test Board Layout (900 MHz ISM - Application) 469 V1.0, 2001-01-01 GaAs Components CGY 196 Package Outlines SCT-598 (Special Package) 2.9 0.2 1.1 max. 0.75 1 2 3 4 +0.2 acc.to DIN 6784 0.2 +0.1 -0.05 0.5 +0.1 -0.05 0.15 M 2.6 max. 0.25 min. 7 6 5 0.20 M A A B GPW09182 M 0.1 max. B 2.1 0.15 10 max. 8 10 max . 0.15 +0.1 -0.06 0.6 1.6 + 0.1 B Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Book 470 Dimensions in mm V1.0, 2001-01-01 GaAs MMIC CGY 197 Data Sheet * Multiband Power Amplifier (800 ... 3500 MHz) * DECT, PHS, PWT, Bluetooth, ISM900, ISM2400 * Single Voltage Supply * POUT = 25.0 dBm at VD = 2.1 V * POUT = 25.5 dBm at VD = 2.3 V * POUT = 27.5 dBm at VD = 3.0 V * POUT = 30.0 dBm at VD = 5.0 V * Operating voltage range: 2.0 to 6 V * Overall power added efficiency up to 50% * Easy external matching ESD: Electrostatic discharge sensitive device, observe handling precautions! SCT-598 Type Marking Ordering Code (taped) Package CGY 197 D7s Q62702-G0116 SCT-598 Maximum Ratings Parameter Symbol Value Unit Positive supply voltage VD 6 V Supply current ID 1.0 A Maximum input power PIN_max 20 dBm Channel temperature TCh 150 C Storage temperature Tstg - 55 ... + 150 C Total power dissipation (TS 81 C) TS: Temperature at soldering point Ptot 1.0 W Pulse peak power PPulse 2.0 W Data Book 471 V1.0, 2001-01-01 GaAs Components CGY 197 Thermal Resistance Parameter Symbol Value Unit Channel-soldering point RthChS 70 K/W VD1 VD2 Harm RF IN / VG RF OUT / VD3 GND Figure 1 GND GND EHT08767 Functional Block Diagram Pin Configuration Pin No. Symbol Configuration 1 RF IN/VG RF input power + Gate voltage [0 V internal] 2 GND RF and DC ground 3 VD2 Pos. drain voltage of the 2nd stage 4 N.C. Not connected 5 Harm Harmonic Match 6 RF OUT/VD3 RF output power/Pos. drain voltage of the 3rd stage 7 GND RF and DC ground 8 VD1 Pos. drain voltage of the 1st stage Data Book 472 V1.0, 2001-01-01 GaAs Components CGY 197 DC Characteristics Characteristics Drain current stage 1 - 3 Transconductance stage 1 - 3 Symbol Limit Values Unit Test Conditions min. typ. max. IDSS1 - 40 - mA VD1 = 3 V IDSS2 - 90 - mA VD2 = 3 V IDSS3 - 390 - mA VD3 = 3 V GFS1 - 75 - mS VD = 3 V, ID = 40 mA GFS2 - 160 - mS VD = 3 V, ID = 90 mA GFS3 - 700 - mS VD = 3 V, ID = 390 mA Determination of Permissible Total Power Dissipation for Continuous and Pulse Operation The dissipated power is the power which remains in the chip and heats the device. It does not contain RF signals which are coupled out consistently. a) Continuous Wave/DC Operation For the determination of the permissible total power dissipation Ptot-DC from the diagram below it is necessary to obtain the temperature of the soldering point TS first. There are two cases: * When RthSA (soldering point to ambient) is not known: Measure TS with a temperature sensor at the leads were the heat is transferred from the device to the board (normally at the widest source or ground lead for GaAs). Use a small sensor of low heat transport, for example a thermoelement (< 1 mm) with thin wires or a temperature indicating paper while the device is operating. * When RthSA is already known: TS = PDiss x RthSA + TA Data Book 473 V1.0, 2001-01-01 GaAs Components CGY 197 Permissible Total Power Dissipation in DC Operation EHT08768 1600 mW Ptot DC 1200 1000 800 600 400 200 0 0 50 100 C 150 TS b) Pulsed Operation For the calculation of the permissible pulse load Ptot-max the following formula is applicable: Ptot-max = Ptot-DC x Pulse factor = Ptot-DC x (Ptot-max/Ptot-DC) Use the values for Ptot-DC as derived from the above diagram and for the pulse factor = Ptot-max/Ptot-DC from the following diagram to get a specific value. Data Book 474 V1.0, 2001-01-01 GaAs Components CGY 197 Pulse Factor EHT08748 10 1 tp Ptot max Ptot DC tp D= T T D= 5 10 0 -6 10 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 tp Ptot-max should not exceed the absolute maximum rating for the dissipated power PPulse = "Pulse peak power" = 2 W c) Reliability Considerations This procedure yields the upper limit for the power dissipation for continuous wave (cw) and pulse applications which corresponds to the maximum allowed channel temperature. For best reliability keep the channel temperature low. The following formula allows to track the individual contributions which determine the channel temperature. TCh = (PDiss x Channel temperature (= junction temperature) Power dissipated in Rth of device from the chip. It does not channel to contain decoupled soldering point RF- power Data Book RthChS) + 475 TS Temperature of soldering point, measured or calculated V1.0, 2001-01-01 GaAs Components CGY 197 Electrical Characteristics, 3.0 V ISM 2400 MHz Application TA = 25 C, f = 2.40 GHz, ZS = ZL = 50 , unless otherwise specified Characteristics Symbol Limit Values min. typ. max. Unit Test Conditions Supply current IDD - 450 - mA VD = 3.0 V; PIN = - 10 dBm Supply current IDD - 290 - mA VD = 2.1 V; PIN = 0 dBm Output Power PO - 24.3 - dBm VD = 2.1 V; PIN = 0 dBm Overall Power added Efficiency PAE - 44 - % VD = 2.1 V; PIN = 0 dBm Overall Power added Efficiency PAE - 46 - % VD = 2.1 V; PIN = 3 dBm Supply current IDD - 305 - mA VD = 2.3 V; PIN = 0 dBm Output Power PO - 24.8 - dBm VD = 2.3 V; PIN = 0 dBm Overall Power added Efficiency PAE - 43 - % VD = 2.3 V; PIN = 0 dBm Overall Power added Efficiency PAE - 45 - % VD = 2.3 V; PIN = 3 dBm Supply current IDD - 335 - mA VD = 3.0 V; PIN = 0 dBm Output Power PO - 26.2 - dBm VD = 3.0 V; PIN = 0 dBm Overall Power added Efficiency PAE - 41 - % VD = 3.0 V; PIN = 0 dBm Overall Power added Efficiency PAE - 43 - % VD = 3.0 V; PIN = 3 dBm Off Isolation -S21 - 35 - dB VD = 0 V; PIN = 0 dBm Data Book 476 V1.0, 2001-01-01 GaAs Components CGY 197 Electrical Characteristics, 3.0 V ISM 2400 MHz Application (cont'd) TA = 25 C, f = 2.40 GHz, ZS = ZL = 50 , unless otherwise specified Characteristics Symbol Limit Values min. Load mismatch - typ. Unit Test Conditions - PIN = 0 dBm, VD 3.0 V, ZS = 50 max. No module damage for 10 s Load VSWR = 20:1 for all phase Load mismatch - No module damage for 10 s - PIN = 3 dBm, VD 3.0 V, ZS = 50 Load VSWR = 20:1 for all phase Stability - All spurious output more - than 70 dB below desired signal level. PIN = 0 dBm, VD = 3.0 V, ZS = 50 Load VSWR = 10:1 for all phase Stability - All spurious output more - than 70 dB below desired signal level. PIN = 3 dBm, VD = 3.0 V, ZS = 50 Load VSWR = 10:1 for all phase Data Book 477 V1.0, 2001-01-01 GaAs Components CGY 197 Electrical Characteristics (3.0 V ISM 2400 MHz Application) Ansoft Corporation - Microwave Harmonica (tm) v7.5 08/09/99 14:58:46 mess Y1 dB(S11(ckt=mess)) 30.00 33.00 25.00 30.00 20.00 27.00 15.00 24.00 10.00 21.00 5.00 Y2 Y1 C:\Daten\Sicherung\Serenade\SPAR_ku.ckt mess Y1 dB(S22(ckt=mess)) mess Y2 dB(S21(ckt=mess)) 18.00 0.00 15.00 -5.00 12.00 -10.00 9.00 -15.00 6.00 -20.00 3.00 1.10 1.36 1.62 1.88 2.14 2.40 2.66 FREQ [GHz] 2.92 3.18 3.44 3.70 EHT08770 Figure 2 S-Parameter, VD = 3.0 V, PIN = - 10 dBm, Duty Cycle 10% 08/09/99 14:55:54 Ansoft Corporation - Microwave Harmonica (tm) v7.5 mess Y1 dB(S11(ckt=mess)) 30.00 33.00 25.00 30.00 20.00 27.00 15.00 24.00 10.00 21.00 5.00 Y2 Y1 C:\Daten\Sicherung\Serenade\SPAR_ku.ckt mess Y1 dB(S22(ckt=mess)) mess Y2 dB(S21(ckt=mess)) 18.00 0.00 15.00 -5.00 12.00 -10.00 9.00 -15.00 6.00 -20.00 3.00 1.10 1.36 1.62 1.88 2.14 2.40 2.66 FREQ [GHz] 2.92 3.18 3.44 3.70 EHT08771 Figure 3 S-Parameter, VD = 3.0 V, PIN = + 3 dBm, Duty Cycle 10% Data Book 478 V1.0, 2001-01-01 GaAs Components CGY 197 POUT = f (PIN), VD = 3 V PIN [dBm] POUT [dBm] ID [A] PAE [%] - 10.00 18.93 0.296 8.7 - 9.00 19.84 0.296 10.8 - 8.00 20.74 0.293 13.4 - 7.00 21.59 0.291 16.4 - 6.00 22.43 0.291 19.9 - 5.00 23.44 0.293 25.0 - 4.00 24.17 0.301 28.8 - 3.00 24.92 0.314 32.8 - 2.00 25.56 0.329 36.3 - 1.00 25.94 0.335 38.9 0.00 26.19 0.334 41.3 1.00 26.24 0.327 42.8 2.00 26.15 0.315 43.4 3.00 26.06 0.311 43.0 4.00 25.93 0.307 42.1 5.00 25.82 0.303 41.6 Data Book 479 V1.0, 2001-01-01 GaAs Components CGY 197 POUT = f (VD), PIN = 3 dBm VD [V] POUT [dBm] ID [A] PAE [%] 2.0 23.84 0.267 44.9 2.1 24.21 0.271 45.8 2.2 24.46 0.281 44.8 2.3 24.74 0.287 44.8 2.4 25.03 0.289 45.6 2.5 25.26 0.297 44.8 2.6 25.41 0.301 44.1 2.7 25.63 0.304 44.3 2.8 25.78 0.308 43.6 2.9 25.90 0.308 43.3 3.0 26.07 0.312 43.0 3.1 26.19 0.311 42.8 3.2 26.28 0.315 41.8 3.3 26.38 0.318 41.2 3.4 26.46 0.319 40.5 3.5 26.48 0.317 39.8 3.6 26.56 0.317 39.5 3.7 26.57 0.320 38.1 3.8 26.60 0.319 37.6 3.9 26.67 0.317 37.4 4.0 26.68 0.320 36.2 Data Book 480 V1.0, 2001-01-01 GaAs Components CGY 197 CGY 197 IN V 1.1 C6 L1 C1 C3 R1 D1 C4 C8 N.C. C7 C2 N.C. D3 C5 D2 C1 = 100 nF C2 = 100 nF OUT C3 = 100 nF C4 = 1.5 pF C5 = 1 nF C6 = 120 pF C7 = 1 pF C8 = 10 pF 0402 L 1 = 4.7 nH R 1 = 2.7 EHT08774 Figure 4 Data Book Testboard Layout (3.0 V ISM 2400 MHz Application) 481 V1.0, 2001-01-01 GaAs Components CGY 197 Electrical Characteristics, 2.3 V DECT-Application: t.b.m. TA = 25 C, f = 1.89 GHz, ZS = ZL = 50 , unless otherwise specified pulsed mode: T = 417 s, duty cycle 12.5% Characteristics Symbol Limit Values min. typ. max. Unit Test Conditions Supply current IDD - 450 - mA VD = 3.0 V; PIN = - 10 dBm Supply current IDD - 330 - mA VD = 2.1 V; PIN = 0 dBm Output Power PO - 25.0 - dBm VD = 2.1 V; PIN = 0 dBm Overall Power added Efficiency PAE - 45 - % VD = 2.1 V; PIN = 0 dBm Overall Power added Efficiency PAE - 50 - % VD = 2.1 V; PIN = 3 dBm Supply current IDD - 340 - mA VD = 2.3 V; PIN = 0 dBm Output Power PO - 25.5 - dBm VD = 2.3 V; PIN = 0 dBm Overall Power added Efficiency PAE - 45 - % VD = 2.3 V; PIN = 0 dBm Overall Power added Efficiency PAE - 50 - % VD = 2.3 V; PIN = 3 dBm Supply current IDD - 370 - mA VD = 3.0 V; PIN = 0 dBm Output Power PO - 27.5 - dBm VD = 3.0 V; PIN = 0 dBm Overall Power added Efficiency PAE - 45 - % VD = 3.0 V; PIN = 0 dBm Overall Power added Efficiency PAE - 50 - % VD = 3.0 V; PIN = 3 dBm Off Isolation -S21 - 40 - dB VD = 0 V; PIN = 0 dBm Data Book 482 V1.0, 2001-01-01 GaAs Components CGY 197 Electrical Characteristics, 2.3 V DECT-Application: t.b.m. (cont'd) TA = 25 C, f = 1.89 GHz, ZS = ZL = 50 , unless otherwise specified pulsed mode: T = 417 s, duty cycle 12.5% Characteristics Symbol Limit Values min. Load mismatch - typ. Unit Test Conditions - PIN = 0 dBm, VD 3.0 V, ZS = 50 max. No module damage for 10 s Load VSWR = 20:1 for all phase Load mismatch - No module damage for 10 s - PIN = 3 dBm, VD 3.0 V, ZS = 50 Load VSWR = 20:1 for all phase Stability - All spurious output more - than 70 dB below desired signal level. PIN = 0 dBm, VD = 3.0 V, ZS = 50 Load VSWR = 10:1 for all phase Stability - All spurious output more - than 70 dB below desired signal level. PIN = 3 dBm, VD = 3.0 V, ZS = 50 Load VSWR = 10:1 for all phase Data Book 483 V1.0, 2001-01-01 GaAs Components CGY 197 Package Outlines SCT-598 (Special Package) 2.9 0.2 1.1 max. 0.75 1 2 3 4 +0.2 acc.to DIN 6784 0.2 +0.1 -0.05 0.5 +0.1 -0.05 0.15 M 2.6 max. 0.25 min. 7 6 5 0.20 M A A B GPW09182 M 0.1 max. B 2.1 0.15 10 max. 8 10 max . 0.15 +0.1 -0.06 0.6 1.6 + 0.1 B Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Book 484 Dimensions in mm V1.0, 2001-01-01 GaAs MMIC CGY 353 Data Sheet * * * * * 3-stage power amplifier for 3.5 GHz applications Linear Output power 31.0 dBm Gain of 21.0 dB typ. Operating voltage 7.0 V typ. Unconditionally stable MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (taped) Package CGY 353 CGY 353 Q62702-G82 MW-16 Maximum Ratings Parameter Symbol Value Unit Positive supply voltage VD 8.0 V Supply current ID 2.0 A Maximum input power PIN_max 17.0 dBm Channel temperature TCh 150 C Storage temperature Tstg - 55 ... + 150 C Total power dissipation (TS 81 C) TS: Temperature at soldering point Ptot 7.0 W Pulse peak power dissipation duty cycle 30%, tON = 0.5 ms PPulse 11.0 W Parameter Symbol Value Unit Channel-soldering point RthChS t.b.d. K/W Thermal Resistance Data Book 485 V1.0, 2001-01-01 GaAs Components CGY 353 VG1 VD1 VG2 VD2 VG3 RF OUT / RF IN VD3 GND Figure 1 GND EHT08779 Functional Block Diagram Pin Configuration Pin No. Name Configuration Bias Voltage 1 RF IN RF input1) - 2 GND GND 0V 3 GND GND 0V 4 GND GND 0V 5 GND GND 0V 6 GND GND 0V 7 VD1 1st RF Amp Drain Bias pos. voltage2) 8 VG2 2nd RF Amp Gate Bias neg. voltage3) 9 VG1 1st RF Amp Gate Bias neg. voltage3) 10 GND GND 0V 11 GND GND 0V 12 RF OUT/VD3 RF output/3rd RF Amp Drain Bias pos. voltage2) 13 RF OUT/VD3 RF output/3rd RF Amp Drain Bias pos. voltage2) 14 RF OUT/VD3 RF output/3rd RF Amp Drain Bias pos. voltage2) 15 VG3 Data Book 3rd RF Amp Gate Bias 486 neg. voltage3) V1.0, 2001-01-01 GaAs Components CGY 353 Pin Configuration (cont'd) Pin No. Name Configuration Bias Voltage 16 VD2 2nd RF Amp Drain Bias pos. voltage2) MW-16 Heatsink Slug GND OWP Ground 0V 1) 2) 3) The gate voltage of the 1st RF Amp is not blocked internally (see also Figure 1). Therefore VG1 must be blocked externally at RF IN. The positive DC voltages of VD1, VD2 and VD3 are typically equal. The voltage range is typically between + 5.0 V and + 7.0 V. The negative DC voltages of VG1, VG2 and VG3 are typically equal. The voltage range depends on the wanted drain current. A gate voltage of - 2.1 V will set ID typically to 1.2 A at VD = 7.0 V. In that case ID1 will have about 70 mA, ID2 about 270 mA and ID3 about 900 mA. Data Book 487 V1.0, 2001-01-01 GaAs Components CGY 353 Electrical Characteristics Conditions: VD = 7.0 V, TA = 25 C, f = 3425 - 3450 MHz, ZS = ZL = 50 , pulsed operation mode, duty cycle = 30%, unless otherwise specified. Parameters Symbol Limit Values min. typ. max. Unit Test Conditions Supply current IDD - 1.2 - A - Power down current IPdown - 10 - mA - Supply current neg. voltage IG - 1 - mA - Gain at nominal linear output power G - 21 - dB - Linear Output Power POUT - 31 - dBm PIN = 12 dBm PSAT - 33 - dBm PIN = 14 dBm Overall Power added PAE Efficiency - 15 - % PIN = 10 dBm Adjacent channel power1) ACP - - - 30 dBc 156 kHz beside carrier Input return loss2) S11 10 - - dB PIN = 10 dBm Output return loss S22 8 - - dB PIN = 10 dBm Noise Figure NF - 5 - dB - Saturation Output Power 1) 2) Modulation: /4 DQPSK with an alpha = 0.4 root raised cosine filtered Symbol rate: 256 ksymbols/s. Transmission burst: Each burst has a 500 s nominal duration with 20 dB of raised cosine shaping of 8 s duration at the beginning and the end of the burst. A maximum of three bursts occur in each 5 ms period, but consecutive bursts are separated by a minimum interval of 1 ms. Duty cycle: 30%, 3 bursts per 5 ms frame with a minimum interval of 1 ms between bursts. The modulation signal has a peak to mean envelope ratio of 3.1 dB. Values of S11 and S22 with match as realized on application board. Data Book 488 V1.0, 2001-01-01 GaAs Components CGY 353 X6 SMA Input X1 C 15 C 18 100 nF 100 nF 10 pF 1 pF IC1 1 2 3 4 5 6 7 8 2.7 pF C2 C5 100 nF 10 pF L1 C7 C3 C1 X7 C6 10 pF 16 RF IN VG1 15 GND GND 14 GND GND 13 GND RF OUT/VD3 12 GND RF OUT/VD3 11 GND RF OUT/VD3 10 VD1 VG3 9 VG2 VD2 GND Backside MW16 CGY 353 17 X5 X6 8 nH C 16 C 19 100 nF 10 pF L2 C 10 0.5 pF Lambda/4 70 C 14 0.5 pF C 20 1 pF C 11 C 13 C 17 2.7 pF 10 pF 100 nF X4 SMA Output X2 X3 EHT09231 Figure 2 Application Circuit Notes: Input and output line: 50 C10 and C14: 0402 capacitors All other capacitors: 0603 C20: AVX 06035J1R0BBT L1 : Coilcraft Air Core Inductor A03T Suggested Heat Sink: about 7 K/W VD3 additionally blocked with 4.7 F/16 V at connection X7 Data Book 489 V1.0, 2001-01-01 GaAs Components CGY 353 Package Outlines MW-16 (Special Package) 1.6 max 7 0.1 max 0.2 7 x 0.8 = 5.6 1.4 0.1 A-B D C 0.350.05 B H 7 9 D M 4x 0.2 A-B D H 16x 0.2 D +0.05 0.15 -0. 06 0...7 16x 0.1 C Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Book 0.8 Exposed solderable heatsink o4.57 0.05 GPW05969 C A 490 Dimensions in mm V1.0, 2001-01-01 GaAs FET CLY 2 Data Sheet * * * * * Power amplifier for mobile phones For frequencies up to 3 GHz Operating voltage range: 2 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 23.5 dBm High efficiency better 55% MW-6 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type CLY 2 Marking Ordering Code (taped) Y2 Q62702-L96 Pin Configuration Package 1 2 3 4 5 6 G S D D S G MW-6 Maximum Ratings Parameter Symbol Value Unit Drain-source voltage VDS 9 V Drain-gate voltage VDG 12 V Gate-source voltage VGS -6 V Drain current ID 600 mA Channel temperature TCh 150 C Storage temperature Tstg - 55 ... + 150 C 900 mW Total power dissipation (TS 50 C)1) Ptot 1) TS is measured on the source lead at the soldering point to the pcb. Thermal Resistance Parameter Symbol Value Unit Channel-soldering point1) RthChS 110 K/W 1) TS is measured on the source lead at the soldering point to the pcb. Data Book 491 V1.0, 2001-01-01 GaAs Components CLY 2 Electrical Characteristics TA = 25 C, unless otherwise specified. Characteristics Symbol Limit Values min. typ. max. Unit Test Conditions Drain-source saturation current IDSS 300 450 650 mA VDS = 3 V, VGS = 0 V Drain-source pinchoff current ID(p) - 5 50 A VDS = 3 V, VGS = - 3.8 V Gate pinch-off current IG(p) - 5 20 A VDS = 3 V, VGS = - 3.8 V Pinch-off Voltage VGS(p) - 3.8 - 2.8 - 1.8 V VDS = 3 V, ID = 50 A Small Signal Gain1) G - 15.5 - dB VDS = 3 V, ID = 180 mA, f = 1.8 GHz, PIN = - 5 dBm Small Signal Gain2) G - 14.5 - dB VDS = 3 V, ID = 180 mA, f = 1.8 GHz, PIN = - 5 dBm Output Power PO 22.5 23.5 - dBm VDS = 3 V, ID = 180 mA f = 1.8 GHz, PIN = 10 dBm 1 dB-Compression Point P1 dB - 23.5 - dBm VDS = 3 V, ID = 180 mA, f = 1.8 GHz 1 dB-Compression Point P1 dB - 27.0 - dBm VDS = 5 V, ID = 180 mA, f = 1.8 GHz Power Added Efficiency PAE - 55 - % VDS = 3 V, ID = 180 mA, f = 1.8 GHz, PIN = 10 dBm Noise figure NF - 1.48 - dB VDS = 3 V, ID = 180 mA, f = 1.8 GHz 1) 2) Matching conditions for maximum small signal gain (not identical with power matching conditions!). Power matching conditions: f = 1.8 GHz; Source Match: GMS: MAG = 0.74, ANG 132; Load Match: GML: MAG 0.61, ANG - 153. Data Book 492 V1.0, 2001-01-01 GaAs Components CLY 2 Compression Power vs. Drain-Source Voltage, f = 1.8 GHz; IDS = 0.5 x IDSS EHT08943 40 dBm P1dB 80 % 70 35 D 30 Output Characteristics EHT08942 0.5 A ID 0.45 D Ptot DC VGS = 0 V 0.4 60 0.35 50 25 40 20 -0.5 V 0.3 P1dB 0.25 -1 V 15 30 10 20 0.2 0.15 -1.5 V -2 V 0.1 5 0 10 0 1 2 3 4 5 V 6 0.05 0 0 VDS Data Book -2.5 V 0 1 2 3 4 5 6 V 7 VDS 493 V1.0, 2001-01-01 GaAs Components CLY 2 Typ. Common Source S-Parameters and Noise Data VDS = 3 V, ID = 180 mA, Z0 = 50 S11 f S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.100 0.99 - 12.0 9.17 171.6 0.007 83.3 0.15 - 16.6 0.150 0.99 - 17.9 9.11 167.4 0.011 80.8 0.16 - 24.2 0.200 0.98 - 23.7 9.01 163.4 0.014 77.6 0.16 - 31.2 0.250 0.97 - 29.5 8.89 159.3 0.017 74.7 0.16 - 39.0 0.300 0.96 - 35.1 8.75 155.4 0.021 72.4 0.16 - 45.9 0.400 0.94 - 46.0 8.40 147.8 0.026 67.0 0.17 - 58.2 0.500 0.92 - 56.4 8.03 140.7 0.031 62.5 0.18 - 69.2 0.600 0.89 - 66.2 7.61 134.1 0.036 58.0 0.18 - 79.0 0.700 0.86 - 75.4 7.22 128.0 0.039 54.4 0.19 - 87.0 0.800 0.84 - 84.1 6.82 122.3 0.043 51.2 0.20 - 94.2 0.900 0.82 - 92.1 6.45 117.2 0.045 48.3 0.20 - 100.4 1.000 0.80 - 99.7 6.10 112.3 0.048 46.1 0.21 - 105.3 1.200 0.77 - 113.6 5.45 103.6 0.052 41.8 0.22 - 115.1 1.400 0.74 - 125.9 4.92 95.8 0.055 38.6 0.23 - 122.9 1.500 0.73 - 131.5 4.71 92.1 0.056 37.2 0.23 - 125.7 1.600 0.72 - 137.1 4.48 88.5 0.057 36.2 0.24 - 129.4 1.800 0.72 - 147.4 4.10 81.7 0.059 34.0 0.25 - 135.0 2.000 0.71 - 157.2 3.77 75.0 0.060 31.9 0.26 - 139.7 2.200 0.71 - 165.3 3.47 68.8 0.062 31.2 0.27 - 143.0 2.400 0.71 - 173.3 3.19 63.0 0.063 29.7 0.29 - 147.2 2.500 0.71 - 177.4 3.06 60.1 0.063 28.9 0.29 - 150.0 3.000 0.72 165.7 2.52 47.2 0.065 28.4 0.32 - 159.7 3.500 0.74 151.7 2.12 36.4 0.066 29.7 0.36 - 167.5 4.000 0.76 139.9 1.85 26.5 0.073 30.6 0.39 - 173.1 4.500 0.78 127.4 1.61 15.3 0.078 28.2 0.42 179.2 5.000 0.79 116.7 1.43 4.6 0.085 24.0 0.45 174.3 Data Book 494 V1.0, 2001-01-01 GaAs Components CLY 2 Typ. Common Source S-Parameters and Noise Data (cont'd) VDS = 3 V, ID = 180 mA, Z0 = 50 S11 f S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG 5.500 0.80 106.3 1.23 - 5.9 0.085 20.9 0.49 167.8 6.000 0.83 97.1 1.06 - 14.8 0.087 17.7 0.52 160.9 opt f Fmin RN rN GHz dB MAG ANG - 0.9 0.79 0.564 61 13.4 0.267 1.8 1.47 0.585 99 13.6 0.272 Additional S-Parameter and noise data available on data disc! Data Book 495 V1.0, 2001-01-01 GaAs Components CLY 2 Typ. Common Source S-Parameters and Noise Data VDS = 5 V, ID = 180 mA, Z0 = 50 f S11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.100 0.99 - 12.3 9.30 171.3 0.007 83.1 0.27 - 10.8 0.150 0.99 - 18.4 9.23 166.9 0.010 80.0 0.27 - 15.8 0.200 0.98 - 24.3 9.13 162.8 0.014 77.2 0.26 - 20.4 0.250 0.97 - 30.3 9.00 158.5 0.017 73.6 0.26 - 25.7 0.300 0.96 - 36.1 8.85 154.6 0.020 71.1 0.26 - 30.5 0.400 0.94 - 47.2 8.48 146.7 0.026 65.8 0.26 - 39.2 0.500 0.91 - 57.8 8.08 139.4 0.030 61.0 0.25 - 47.7 0.600 0.89 - 67.8 7.64 132.6 0.034 56.3 0.25 - 55.4 0.700 0.86 - 77.1 7.23 126.3 0.038 52.8 0.25 - 62.2 0.800 0.84 - 85.9 6.81 120.6 0.041 49.5 0.24 - 68.6 0.900 0.81 - 93.9 6.43 115.3 0.043 46.4 0.24 - 74.1 1.000 0.80 - 101.5 6.07 110.4 0.045 44.2 0.24 - 79.2 1.200 0.76 - 115.4 5.40 101.4 0.048 40.1 0.24 - 88.8 1.400 0.74 - 127.6 4.87 93.6 0.051 36.9 0.24 - 96.8 1.500 0.73 - 133.2 4.65 89.8 0.052 35.6 0.24 - 100.2 1.600 0.72 - 138.8 4.42 86.1 0.052 34.6 0.24 - 103.9 1.800 0.72 - 149.0 4.04 79.2 0.054 32.7 0.25 - 110.4 2.000 0.71 - 158.6 3.71 72.3 0.054 30.9 0.26 - 116.2 2.200 0.71 - 166.6 3.41 66.1 0.055 30.9 0.27 - 120.4 2.400 0.71 - 174.5 3.13 60.1 0.056 29.9 0.28 - 125.6 2.500 0.71 - 178.5 3.00 57.1 0.056 29.4 0.29 - 129.1 3.000 0.73 164.9 2.47 43.9 0.057 30.8 0.32 - 140.6 3.500 0.75 151.1 2.07 32.5 0.059 34.3 0.35 - 150.6 4.000 0.77 139.4 1.80 22.1 0.067 36.7 0.40 - 158.2 4.500 0.78 126.9 1.56 10.5 0.074 34.7 0.43 - 167.6 5.000 0.79 116.1 1.37 - 0.6 0.082 30.2 0.47 - 174 Data Book 496 V1.0, 2001-01-01 GaAs Components CLY 2 Typ. Common Source S-Parameters and Noise Data (cont'd) VDS = 5 V, ID = 180 mA, Z0 = 50 f S11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG 5.500 0.81 105.6 1.18 - 11.6 0.083 26.7 0.51 178 6.000 0.84 96.3 1.00 - 20.8 0.086 22.9 0.54 169.6 opt RN rN ANG - 0.559 61 14.1 0.281 0.580 99 13.6 0.272 f Fmin GHz dB MAG 0.9 0.83 1.8 1.48 Additional S-Parameter available on data disc! Data Book 497 V1.0, 2001-01-01 GaAs Components CLY 2 Permissible Pulse Load Ptot_max/Ptot_DC = f(tP) Total Power Dissipation Ptot = f(TS) Ptot EHT08944 1 W EHT08945 10 3 tp Ptot max Ptot DC tp D= T 0.8 10 2 0.6 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 0.4 10 1 5 0.2 0 0 50 100 10 0 -6 10 C 150 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 tp TS Data Book T 498 V1.0, 2001-01-01 GaAs Components CLY 2 Package Outlines MW-6 (Special Package) 1.1 max 2.9 0.1 B 0.6 +0.1 -0.05 5 4 1 2 3 +0.2 acc. to DIN 6784 10max 1.3 0.1 0.3 +0.1 -0.05 6 2.6 max 10max A 0.1 max 0.08...0.15 1.9 M 2... 30 B 0.20 M A GPW05794 0.25 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Book 499 Dimensions in mm V1.0, 2001-01-01 GaAs FET CLY 5 Data Sheet * * * * * Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 26.5 dBm High efficiency better 55% ESD: Electrostatic discharge sensitive device, observe handling precautions! Type CLY 5 Marking CLY 5 Ordering Code (taped) SOT-223 Pin Configuration Q62702-L90 1 2 3 4 G S D S Package P-SOT223-4-2 Maximum Ratings Parameter Symbol Value Unit Drain-source voltage VDS 9 V Drain-gate voltage VDG 12 V Gate-source voltage VGS -6 V Drain current ID 1.2 A Channel temperature TCh 150 C Storage temperature Tstg - 55 ... + 150 C Pulse peak power PPulse 9 W Total power dissipation (TS 80 C) TS: Temperature at soldering point Ptot 2 W Parameter Symbol Value Unit Channel-soldering point RthChS 35 K/W Data Book 500 Thermal Resistance V1.0, 2001-01-01 GaAs Components CLY 5 Electrical Characteristics TA = 25 C, unless otherwise specified. Characteristics Symbol Limit Values min. typ. max. Unit Test Conditions Drain-source saturation current IDSS 600 800 1200 mA VDS = 3 V VGS = 0 V Drain-source pinch-off current ID - 10 100 A VDS = 3 V VGS = - 3.8 V Gate pinch-off current IG - 5 20 A VDS = 3 V VGS = - 3.8 V Pinch-off Voltage VGS(p) - 3.8 - 2.8 - 1.8 V VDS = 3 V ID = 100 A Small Signal Gain1) G 10.5 11.0 - dB VDS = 3 V ID = 350 mA f = 1.8 GHz PIN = 0 dBm Small Signal Gain1) G 11.5 12.0 - dB VDS = 5 V ID = 350 mA f = 1.8 GHz PIN = 0 dBm Small Signal Gain2) GP 9.0 9.5 - dB VDS = 3 V ID = 350 mA f = 1.8 GHz PIN = 0 dBm Output Power PO 26.5 27 - dBm VDS = 3 V ID = 350 mA f = 1.8 GHz PIN = 19 dBm Output Power PO 29.5 30 - dBm VDS = 5 V ID = 350 mA f = 1.8 GHz PIN = 21 dBm - 26.5 - dBm VDS = 3 V ID = 350 mA f = 1.8 GHz 1 dB-Compression Point P1 dB Data Book 501 V1.0, 2001-01-01 GaAs Components CLY 5 Electrical Characteristics (cont'd) TA = 25 C, unless otherwise specified. Characteristics Symbol Limit Values Unit Test Conditions min. typ. max. 1 dB-Compression Point P1dB - 30 - dBm VDS = 5 V ID = 350 mA f = 1.8 GHz Power Added Efficiency PAE 40 55 - % VDS = 5 V ID = 350 mA f = 1.8 GHz PIN = 21 dBm Noise figure NF - 1.72 - dB VDS = 5 V ID = 350 mA f = 1.8 GHz 1) 2) Matching conditions for maximum small signal gain (not identical with power matching conditions!). Power matching conditions: f = 1.8 GHz: Source Match: GMS: MAG 0.58; ANG -143; Load Match G ML: MAG 0.76; ANG -116 Data Book 502 V1.0, 2001-01-01 GaAs Components CLY 5 Compression Power vs. Drain-Source Voltage f = 1.8 GHz; IDS = 0.5 x IDSS P1dB 80 % 35 70 30 60 EHT08947 16 dB 14 D Gain EHT08946 40 dBm Gain and P1 dB vs. Drain Source Voltage, f = 1.8 GHz; IDS = 0.5 x IDSS P1dB 12 2 W P1dB 1.5 Gain 1.25 25 50 10 20 40 8 15 30 6 0.75 10 20 4 0.5 5 10 2 0.25 0 0 0 D 0 1 2 3 4 5 6 7 V 8 P1dB 0 1 2 3 4 1 5 6 7 V 8 0 VDS VDS Output Characteristics ID EHT08948 1 A 0.9 Ptot DC VGS = 0 V 0.8 0.7 0.6 -0.5 V 0.5 0.4 0.3 -1 V 0.2 -1.5 V 0.1 0 0 -2 V 1 2 3 4 5 V 6 VDS Data Book 503 V1.0, 2001-01-01 GaAs Components CLY 5 Typ. Common Source S-Parameters and Noise Data VDS = 3 V, ID = 350 mA, Z0 = 50 f S11 S21 S12 GHz MAG ANG MAG ANG MAG 0.1 0.98 - 26.6 11.52 160.7 0.15 0.96 - 39.4 11.15 0.2 0.93 - 51.5 0.25 0.9 0.3 MAG ANG 0.01024 79 0.3 - 171.8 151.4 0.015 74.3 0.31 - 169.3 10.6 142.8 0.01942 69.9 0.33 - 169.2 - 63.1 10.06 134.9 0.02323 66.1 0.36 - 169.4 0.87 - 73.8 9.49 127.4 0.02665 62.3 0.38 - 169.4 0.4 0.81 - 93.3 8.34 114.1 0.03245 57 0.4 - 172.7 0.5 0.77 - 110.3 7.33 102.5 0.03711 52.8 0.43 - 175.6 0.6 0.73 - 125.3 6.47 92.4 0.04138 49.7 0.45 - 179.4 0.7 0.71 - 138.5 5.75 83.5 0.04528 47.3 0.47 177.5 0.8 0.7 - 150.4 5.14 75.2 0.0489 0.49 174.2 0.9 0.69 - 161.1 4.64 67.6 0.05271 43.3 0.5 170.8 1 0.68 - 170.8 4.2 60.5 0.05646 41.6 0.51 168.1 1.2 0.69 172.1 3.51 47.2 0.06393 38 0.54 161.8 1.4 0.7 157.3 2.98 35.1 0.07181 34 0.57 155.6 1.5 0.71 150.5 2.76 29.2 0.07569 32 0.58 152.9 1.6 0.72 144.1 2.56 23.6 0.07941 29.7 0.59 149.4 1.8 0.74 132.2 2.22 12.6 0.08684 24.8 0.62 143.2 2 0.76 121.4 1.94 2.1 0.09377 19.7 0.65 137 2.2 0.78 111.5 1.7 - 7.9 0.0998 0.68 130.9 2.4 0.8 102.5 1.49 - 17.4 0.10532 9.4 0.7 124.7 2.5 0.81 98 1.39 - 21.9 0.1076 6.7 0.71 121.1 3 0.85 79.2 1.01 - 42.1 0.11638 - 6 0.76 105.6 3.5 0.87 64 0.75 - 58.1 0.12148 - 17.2 0.8 91.4 4 0.89 51.4 0.59 - 70.6 0.12571 - 27.3 0.84 78.2 4.5 0.9 39.8 0.48 - 82.2 0.12914 - 37.2 0.86 65.6 5 0.92 29 0.41 - 93.1 0.13429 - 47 0.88 53.1 Data Book 504 ANG S22 45.2 14.6 V1.0, 2001-01-01 GaAs Components CLY 5 Typ. Common Source S-Parameters and Noise Data (cont'd) VDS = 3 V, ID = 350 mA, Z0 = 50 f S11 S21 S12 GHz MAG ANG MAG ANG 5.5 0.92 18.4 0.35 6 0.92 8.3 0.31 MAG ANG - 103.4 0.13892 - 57 0.9 40.3 - 112.4 0.14142 - 66.8 0.91 27 opt ANG RN rN ANG - 0.408 142 3.9 0.79 0.664 - 134 8.1 0.162 f Fmin GHz dB MAG 0.9 0.92 1.8 1.72 Data Book MAG S22 505 V1.0, 2001-01-01 GaAs Components CLY 5 Typ. Common Source S-Parameters and Noise Data VDS = 5 V, ID = 350 mA, Z0 = 50 f S11 S21 S12 GHz MAG ANG MAG ANG MAG 0.1 0.98 - 26.3 13.02 160.1 0.15 0.95 - 38.8 12.58 0.2 0.92 - 50.8 0.25 0.89 0.3 MAG ANG 0.00906 79.1 0.15 - 153.9 150.7 0.01326 73.7 0.17 - 148.4 11.98 141.9 0.01702 69.3 0.2 - 148.5 - 62.1 11.34 133.7 0.02026 65.6 0.23 - 149.9 0.86 - 72.6 10.68 126.1 0.02304 61.8 0.26 - 150.6 0.4 0.8 - 91.7 9.39 112.4 0.02771 57 0.29 - 155.5 0.5 0.76 - 108.3 8.24 100.6 0.03151 53.4 0.33 - 159.4 0.6 0.72 - 122.9 7.27 90.2 0.0348 51.2 0.35 - 164.1 0.7 0.7 - 135.9 6.45 80.9 0.03798 49.7 0.37 - 167.6 0.8 0.69 - 147.6 5.77 72.4 0.04099 48.8 0.4 - 171.3 0.9 0.68 - 158.1 5.2 64.5 0.04435 47.9 0.41 - 174.9 1 0.68 - 167.7 4.7 57 0.04784 47.1 0.44 - 177.8 1.2 0.68 175.3 3.92 43 0.05543 45.2 0.47 175.4 1.4 0.7 160.4 3.31 30.1 0.06413 42.2 0.51 168.7 1.5 0.71 153.6 3.06 24 0.06865 40.6 0.54 165.5 1.6 0.72 147.1 2.83 17.9 0.07318 38.5 0.55 161.7 1.8 0.75 135 2.43 6.2 0.08237 33.7 0.6 154.6 2 0.77 123.9 2.1 -5 0.09121 28.3 0.64 147.5 2.2 0.8 113.7 1.82 - 15.6 0.09917 22.5 0.67 140.4 2.4 0.82 104.3 1.58 - 25.7 0.10617 16.7 0.7 133.3 2.5 0.83 99.7 1.47 - 30.4 0.10916 13.6 0.72 129.1 3 0.87 80.1 1.02 - 51.4 0.12055 - 0.8 0.78 111.6 3.5 0.89 64.4 0.74 - 67.4 0.12631 - 13.4 0.83 95.8 4 0.91 51.5 0.56 - 79.4 0.13053 - 24.5 0.86 81.3 4.5 0.92 39.6 0.45 - 90.2 0.13384 - 35 0.88 67.9 5 0.93 28.8 0.37 - 100 0.13894 - 45.2 0.91 54.9 Data Book 506 ANG S22 V1.0, 2001-01-01 GaAs Components CLY 5 Typ. Common Source S-Parameters and Noise Data (cont'd) VDS = 5 V, ID = 350 mA, Z0 = 50 f S11 S21 S12 GHz MAG ANG MAG ANG MAG 5.5 0.93 18.1 0.31 - 109.2 0.1434 6 0.93 8 0.27 S22 ANG MAG ANG - 55.5 0.92 41.7 - 117.1 0.14538 - 65.6 0.92 28 opt RN rN ANG - 0.369 139 4.9 0.097 0.603 - 132 10.9 0.218 f Fmin GHz dB MAG 0.9 1.05 1.8 1.94 Additional S-Parameter available on data disc! Data Book 507 V1.0, 2001-01-01 GaAs Components CLY 5 Permissible Pulse Load Ptot_max/Ptot_DC = f(tP) Total Power Dissipation Ptot = f(TS) Ptot EHT08949 3.2 W 2.8 EHT08950 10 3 Ptot max Ptot DC tp tp D= T T 2.4 10 2 2 5 1.6 1.2 10 1 0.8 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0.4 0 0 50 100 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 C 150 tp TS Data Book s 10 0 508 V1.0, 2001-01-01 GaAs Components CLY 5 Increased Power Handling Capability Pulsed Applications GSM / PCN TDMA-Frame: 4.615 ms 577 s Figure 1 EHT08952 GSM/PCN TDMA-Frame (D = tP/T = 0.577 ms/4.615 ms = 0.125) Take value Ptot max/Ptot DC from diagram permissible pulse load --> Ptot max/Ptot DC 1.4 Ptot = 2 W x 1.4 = 2.8 W DECT TDMA-Frame: 10 ms 417 s Figure 2 EHT08956 DECT TDMA-Frame (D = tP/T = 0.417 ms/10 ms = 0.0417) Take value Ptot max/Ptot DC from diagram permissible pulse load --> Ptot max/Ptot DC 1.5 Ptot = 2 W x 1.5 = 3 W Data Book 509 V1.0, 2001-01-01 GaAs Components CLY 5 Package Outlines P-SOT223-4-2 (Small Outline Transistor) 1.6 0.1 6.5 0.2 0.1 max +0.2 acc. to DIN 6784 1 2 3.5 0.2 4 0.5 min B 7 0.3 3 0.1 15max A 3 0.28 0.04 2.3 0.7 0.1 0.25 M 0.25 A Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Book 510 M B GPS05560 4.6 Dimensions in mm V1.0, 2001-01-01 GaAs FET CLY 10 Data Sheet * * * * * Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V VD = 3 V, f = 1.8 GHz, POUT = 28.5 dBm typ. High efficiency better 55% ESD: Electrostatic discharge sensitive device, observe handling precautions! Type CLY 10 Marking CLY 10 Ordering Code (taped) Q62702-L94 SOT-223 Pin Configuration 1 2 3 4 G S D S Package P-SOT223-4-2 Maximum Ratings Parameter Symbol Value Unit Drain-source voltage VDS 9 V Drain-gate voltage VDG 12 V Gate-source voltage VGS -6 V Drain current ID 2.1 A Channel temperature TCh 150 C Storage temperature Tstg - 55 ... + 150 C Total power dissipation (TS 80 C)1) Total power dissipation (TS < 110 C)1) PtotDC 3.5 2.0 W 1) TS is measured on the source lead to the PCB under load. Thermal Resistance Parameter Symbol Value Unit Channel - soldering point1) RthChS 20 K/W 1) TS is measured on the source lead to the PCB under load. Data Book 511 V1.0, 2001-01-01 GaAs Components CLY 10 Electrical Characteristics TA = 25 C, unless otherwise specified. Characteristics Symbol Limit Values Unit Test Conditions min. typ. max. 1.2 1.6 2.4 A VDS = 3 V, VGS = 0 V Drain-source pinch- ID off current - - 200 A VDS = 3 V, VGS = - 3.8 V Gate pinch-off current IG - 10 35 A VDS = 3 V, VGS = - 3.8 V Pinch-off Voltage VGS(p) - 3.8 - 2.8 - 1.8 V VDS = 3 V, ID = 200 A Small Signal Gain1) G - 9 - dB VDS = 3 V, ID = 700 mA, f = 1.8 GHz, PIN = 0 dBm Small Signal Gain2) G - 8 - dB VDS = 3 V, ID = 700 mA, f = 1.8 GHz, PIN = 0 dBm Drain-source saturation current IDSS Output Power PO 28 28.5 - dBm VDS = 3 V, ID = 700 mA, f = 1.8 GHz, PIN = 20.5 dBm Output Power PO 32.0 32.5 - dBm VDS = 5 V, ID = 700 mA, f = 0.9 GHz, PIN = 20 dBm 1 dB-Compression Point P1 dB - 28.5 - dBm VDS = 3 V, ID = 700 mA, f = 1.8 GHz Data Book 512 V1.0, 2001-01-01 GaAs Components CLY 10 Electrical Characteristics (cont'd) TA = 25 C, unless otherwise specified. Characteristics Symbol Limit Values min. typ. max. Unit Test Conditions 1 dB-Compression Point P1 dB - 32.5 - dBm VDS = 5 V, ID = 700 mA, f = 1.8 GHz Power Added Efficiency PAE 40 55 - % VDS = 5 V, ID = 700 mA, f = 1.8 GHz, PIN = 20 dBm 1) 2) Matching conditions for maximum small signal gain: f = 1.8 GHz Source Match: G MS: MAG = 0.70, ANG - 116; Load Match: GML: MAG 0.68, ANG - 145 Power matching conditions: f = 1.8 GHz Source Match: G MS: MAG = 0.70, ANG - 120; Load Match: GML: MAG 0.68, ANG - 130 Data Book 513 V1.0, 2001-01-01 GaAs Components CLY 10 Compression Power vs. Drain-Source Voltage f = 1.8 GHz; IDS = 0.5 x IDSS EHT08933 40 dBm 70 35 D 60 30 P1dB 50 25 20 40 D EHT08934 16 dB 14 Small Signal Gain P1dB 80 % Gain and P1 dB vs. Drain Source Voltage, f = 1.8 GHz; IDS = 0.5 x IDSS 4 W P1dB 3.5 3 12 Small Signal Gain 10 2.5 2 8 P1dB 15 30 6 1.5 10 20 4 1 5 10 2 0.5 0 0 0 1 0 2 3 4 5 6 7 V 8 0 1 2 3 4 5 6 7 V 8 0 VDS VDS Output Characteristics ID EHT08935 1.8 A 1.6 VGS = 0 V Ptot DC 1.4 VGS = -0.5 V 1.2 1 VGS = -1 V 0.8 VGS = -1.5 V 0.6 0.4 VGS = -2 V 0.2 VGS = -2.5 V 0 0 1 2 3 4 5 V 6 VDS Data Book 514 V1.0, 2001-01-01 GaAs Components CLY 10 Typ. Common Source S-Parameters VDS = 5 V, ID = 700 mA, Zo = 50 S11 f S21 S12 S22 GHZ MAG ANG MAG ANG MAG ANG MAG ANG 0.1 0.96 - 48.5 14.2 150.6 0.01079 68.9 0.45 - 171.9 0.15 0.93 - 68.8 12.97 137.9 0.01503 60.6 0.47 - 171.3 0.2 0.91 - 86.4 11.48 127.5 0.01801 54.4 0.5 - 173.3 0.25 0.88 - 101 10.26 119.1 0.02041 50.1 0.53 - 174.5 0.3 0.87 - 113.2 9.19 111.4 0.02224 45.9 0.55 - 175.6 0.4 0.84 - 132.9 7.43 99.4 0.02486 41.7 0.56 - 179.8 0.5 0.83 - 147.7 6.17 89.4 0.02691 39.1 0.58 177.5 0.6 0.82 - 159.5 5.25 81.2 0.02894 37.6 0.59 173.8 0.7 0.82 - 169.4 4.54 73.9 0.03078 36.7 0.6 171.4 0.8 0.81 - 177.9 3.98 67.1 0.03264 35.8 0.61 168.7 0.9 0.82 174.5 3.55 61 0.03469 35 0.61 165.8 1 0.82 167.7 3.17 55.1 0.03667 34.4 0.62 163.9 1.2 0.82 155.7 2.62 43.9 0.04065 32.4 0.64 158.8 1.4 0.83 145.1 2.2 33.6 0.04503 29.9 0.65 153.6 1.5 0.84 140.1 2.04 28.7 0.04721 28.8 0.66 151.6 1.6 0.84 135.4 1.88 23.8 0.04917 27.2 0.67 148.5 1.8 0.85 126.3 1.63 14.3 0.05335 23.5 0.69 143.3 2 0.86 118 1.42 5.1 0.05705 19.7 0.71 138.5 2.2 0.87 110.1 1.25 - 3.6 0.0602 15.9 0.72 133.8 2.4 0.88 102.8 1.1 - 12.2 0.06313 12 0.73 129 2.5 0.88 99.1 1.03 - 16.1 0.06448 9.9 0.74 125.9 Data Book 515 V1.0, 2001-01-01 GaAs Components CLY 10 Typ. Common Source S-Parameters (cont'd) VDS = 5 V, ID = 700 mA, Zo = 50 S11 f S21 S12 S22 GHZ MAG ANG MAG ANG MAG ANG MAG ANG 3 0.9 83.3 0.76 - 34.4 0.06956 - 0.2 0.77 113.9 3.5 0.91 70.3 0.57 - 49 0.07219 -9 0.81 102.8 4 0.91 59.3 0.45 - 60.5 0.07429 - 17.1 0.83 92.1 4.5 0.92 48.9 0.37 - 71.1 0.07489 - 25.5 0.85 82.5 5 0.93 39.2 0.31 - 81.2 0.07614 - 32.9 0.89 72.3 5.5 0.93 29.5 0.26 - 90.4 0.07667 - 40.9 0.9 61.7 6 0.92 20.6 0.23 - 97.9 0.07466 - 48.6 0.91 51 Additional S-Parameter available on data disc! Data Book 516 V1.0, 2001-01-01 GaAs Components CLY 10 Permissible Pulse Load Ptot_max/Ptot_DC = f(tP) Total Power Dissipation Ptot_DC = f(TS) EHT08937 10 1 EHT08936 4 tp Ptot max Ptot DC Ptot DC W 3 tp D= T 5 T D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 2 1 0 0 50 10 0 -5 10 C 150 100 10 -3 10 -2 10 -1 10 0 tp TS Data Book 10 -4 517 V1.0, 2001-01-01 GaAs Components CLY 10 Package Outlines P-SOT223-4-2 (Small Outline Transistor) 1.6 0.1 6.5 0.2 0.1 max +0.2 acc. to DIN 6784 1 2 3.5 0.2 4 0.5 min B 7 0.3 3 0.1 15max A 3 0.28 0.04 2.3 0.7 0.1 0.25 M 0.25 A Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Book 518 M B GPS05560 4.6 Dimensions in mm V1.0, 2001-01-01 GaAs FET CLY 15 Data Sheet * * * * * Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 31.5 dBm Efficiency better 50% ESD: Electrostatic discharge sensitive device, observe handling precautions! Type CLY 15 Marking CLY 15 Ordering Code (taped) Q62702-L99 SOT-223 Pin Configuration 1 2 3 4 G S D S Package P-SOT223-4-2 Maximum Ratings Parameter Symbol Value Unit Drain-source voltage VDS 9 V Drain-gate voltage VDG 12 V Gate-source voltage VGS -6 V Drain current ID 5 A Channel temperature TCh 150 C Storage temperature Tstg - 55 ... + 150 C Total power dissipation (TS 80 C) TS: Temperature at soldering point Ptot 4.7 W Parameter Symbol Value Unit Channel-soldering point (GND) RthChS < 15 K/W Thermal Resistance Data Book 519 V1.0, 2001-01-01 GaAs Components CLY 15 Electrical Characteristics TA = 25 C, unless otherwise specified. Characteristics Symbol Limit Values min. typ. max. Unit Test Conditions Drain-source saturation current1) IDSS 2.4 3.2 4.8 A VDS = 3 V VGS = 0 V Cut-off current ID - - 400 A VDS = 3 V VGS = - 3.8 V Gate cut-off current IG - 20 70 A VDS = 3 V VGS = - 3.8 V Pinch-off Voltage VGS(p) - 3.8 - 2.8 - 1.8 V VDS = 3 V ID = 400 A Small Signal Gain1) G - 12 - dB VDS = 3 V ID = 1.4 A f = 0.9 GHz PIN = 5 dBm Output Power1) PO 32 32.5 - dBm VDS = 3 V ID = 1.4 A f = 0.9 GHz PIN = 23 dBm Output Power1) PO 34.5 35 - dBm VDS = 5 V ID = 1.4 A f = 0.9 GHz PIN = 24 dBm 1 dB-Compression Point1) P1 dB - 31.5 - dBm VDS = 3 V ID = 1.4 A f = 0.9 GHz 1 dB-Compression Point1) P1 dB - 34.5 - dBm VDS = 5 V ID = 1.4 A f = 0.9 GHz Power Added Efficiency1) D 45 50 - % VDS = 3 V f = 0.9 GHz PIN = 23 dBm 1) Pulsed measurement; duty cycle 1:10; tON = 1 ms, power matching conditions. Data Book 520 V1.0, 2001-01-01 GaAs Components CLY 15 Output Characteristics EHT08938 3 ID VGS = 0 V A 2.5 -0.5 V 2 1.5 -1 V 1 -1.5 V 0.5 -2 V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VDS Data Book 521 V1.0, 2001-01-01 GaAs Components CLY 15 Typ. Common Source S-Parameter VDS = 3 V, ID = 1.4 A, Z0 = 50 f S11 GHz MAG ANG 0.200 0.91 0.250 S21 S22 ANG MAG ANG MAG ANG - 150.9 5.69 99.7 0.01 48.5 0.90 176.0 0.91 - 160.6 4.63 93.5 0.02 45.9 0.87 173.8 0.300 0.90 - 167.9 3.89 88.7 0.02 46.8 0.88 171.8 0.350 0.90 - 173.7 3.34 84.6 0.02 47.4 0.87 170.8 0.400 0.90 - 178.7 2.92 80.9 0.02 47.5 0.87 168.8 0.450 0.90 176.9 2.60 77.5 0.02 47.6 0.87 167.3 0.500 0.90 173.0 2.34 74.6 0.02 48.1 0.87 165.8 0.550 0.90 169.5 2.12 71.4 0.02 47.7 0.87 164.2 0.600 0.90 166.1 1.95 68.7 0.03 47.0 0.87 162.8 0.650 0.90 163.1 1.79 66.1 0.03 47.1 0.87 161.2 0.700 0.90 160.0 1.66 63.5 0.03 46.6 0.87 159.7 0.750 0.90 157.2 1.54 60.9 0.03 45.6 0.87 158.3 0.800 0.90 154.6 1.45 58.6 0.03 45.0 0.87 156.9 0.850 0.90 152.0 1.36 56.1 0.03 43.9 0.87 155.6 0.900 0.90 149.3 1.28 53.8 0.04 43.0 0.87 154.0 0.950 0.90 146.9 1.21 51.5 0.04 41.9 0.87 152.6 1.000 0.90 144.5 1.15 49.0 0.04 41.0 0.87 151.3 1.200 0.91 135.2 0.95 40.3 0.05 36.1 0.87 145.8 1.400 0.91 126.7 0.81 31.8 0.05 31.9 0.88 140.1 1.600 0.92 118.5 0.70 23.8 0.06 26.1 0.88 134.7 1.800 0.92 110.6 0.61 16.3 0.06 20.8 0.88 129.7 2.000 0.93 103.2 0.55 8.7 0.06 15.6 0.89 124.3 2.200 0.93 96.3 0.49 2.1 0.07 10.4 0.88 119.1 2.400 0.93 89.3 0.44 - 4.1 0.07 5.2 0.90 114.4 2.600 0.94 82.8 0.40 - 10.0 0.07 0.2 0.90 109.3 2.800 0.94 77.0 0.37 - 14.9 0.07 - 4.2 0.90 104.5 Data Book MAG S12 522 V1.0, 2001-01-01 GaAs Components CLY 15 Typ. Common Source S-Parameter (cont'd) VDS = 3 V, ID = 1.4 A, Z0 = 50 f S11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG 3.000 0.94 71.3 0.34 - 19.6 0.08 - 9.7 0.91 99.8 3.200 0.93 66.0 0.32 - 23.4 0.08 - 15.0 0.92 95.1 3.400 0.92 61.6 0.31 - 26.8 0.08 - 19.4 0.93 90.8 3.600 0.91 57.3 0.30 - 29.7 0.07 - 23.7 0.92 87.0 3.800 0.90 53.1 0.31 - 33.1 0.07 - 28.1 0.93 83.1 4.000 0.89 49.2 0.32 - 38.1 0.07 - 31.9 0.93 79.8 4.200 0.86 46.4 0.34 - 44.9 0.07 - 35.4 0.92 76.4 4.400 0.83 44.7 0.36 - 55.4 0.07 - 37.5 0.92 73.4 4.600 0.89 44.2 0.07 - 36.2 0.07 - 38.1 0.92 71.0 4.800 0.83 43.7 0.34 - 80.6 0.07 - 39.4 0.92 68.2 5.000 0.85 42.2 0.30 - 92.1 0.07 - 40.3 0.92 65.2 5.200 0.88 39.4 0.27 - 100.8 0.07 - 42.5 0.92 62.2 5.400 0.89 36.5 0.24 - 107.8 0.07 - 45.0 0.92 58.7 5.600 0.90 33.1 0.22 - 113.6 0.07 - 48.6 0.92 55.7 5.800 0.91 29.6 0.19 - 118.9 0.07 - 51.4 0.92 52.1 6.000 0.92 26.4 0.18 - 124.4 0.07 - 54.4 0.92 48.0 Data Book 523 V1.0, 2001-01-01 GaAs Components CLY 15 Typ. Common Source S-Parameter VDS = 5 V, ID = 1.4 A, Z0 = 50 f S11 GHz MAG ANG 0.200 0.90 0.250 S21 S22 ANG MAG ANG MAG ANG - 151.1 7.61 98.8 0.01 46.5 0.84 176.7 0.89 - 160.6 6.18 92.4 0.02 43.4 0.82 174.7 0.300 0.89 - 167.8 5.19 87.5 0.02 46.5 0.82 172.9 0.350 0.89 - 173.7 4.45 83.3 0.02 46.0 0.82 171.8 0.400 0.88 - 178.7 3.90 79.4 0.02 46.5 0.82 169.7 0.450 0.89 177.0 3.47 75.9 0.02 47.3 0.82 168.3 0.500 0.88 173.2 3.11 72.8 0.02 47.9 0.82 166.7 0.550 0.88 169.6 2.82 69.5 0.02 47.8 0.82 165.5 0.600 0.89 166.4 2.59 66.6 0.03 47.4 0.82 163.9 0.650 0.88 163.1 2.38 63.9 0.03 47.4 0.82 162.6 0.700 0.89 160.3 2.20 61.1 0.03 46.5 0.82 161.0 0.750 0.89 157.5 2.05 58.4 0.03 45.6 0.82 159.6 0.800 0.89 154.9 1.91 55.9 0.03 45.3 0.82 158.0 0.850 0.89 152.1 1.79 53.2 0.03 44.8 0.82 156.8 0.900 0.89 149.7 1.69 50.7 0.03 43.9 0.82 155.4 0.950 0.89 147.1 1.59 48.4 0.04 42.7 0.82 154.1 1.000 0.89 144.7 1.51 45.7 0.04 42.0 0.82 152.8 1.200 0.89 135.5 1.24 36.2 0.04 37.8 0.83 147.3 1.400 0.90 127.1 1.04 27.1 0.05 32.2 0.83 141.9 1.600 0.91 119.1 0.90 18.3 0.05 27.4 0.84 136.8 1.800 0.92 111.1 0.78 10.1 0.06 22.5 0.84 131.6 2.000 0.92 103.7 0.68 2.1 0.06 18.2 0.85 126.3 2.200 0.93 96.6 0.61 - 5.1 0.06 12.5 0.86 121.3 2.400 0.93 89.8 0.54 - 12.0 0.07 7.3 0.86 116.1 2.600 0.93 83.2 0.48 - 18.6 0.07 2.6 0.87 111.4 2.800 0.93 77.3 0.43 - 24.0 0.07 - 2.6 0.88 106.3 Data Book MAG S12 524 V1.0, 2001-01-01 GaAs Components CLY 15 Typ. Common Source S-Parameter (cont'd) VDS = 5 V, ID = 1.4 A, Z0 = 50 f S11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG 3.000 0.93 71.8 0.39 - 29.3 0.07 - 7.2 0.89 101.8 3.200 0.92 66.6 0.37 - 33.5 0.07 - 12.1 0.90 97.2 3.400 0.92 61.8 0.34 - 37.2 0.07 - 16.8 0.91 92.5 3.600 0.91 57.9 0.32 - 40.5 0.07 - 21.1 0.91 88.8 3.800 0.90 54.1 0.32 - 43.9 0.07 - 24.9 0.92 85.1 4.000 0.88 50.5 0.31 - 48.3 0.07 - 27.6 0.92 81.4 4.200 0.87 47.8 0.32 - 53.8 0.07 - 31.5 0.92 78.1 4.400 0.86 45.7 0.32 - 60.9 0.07 - 33.4 0.92 74.9 4.600 0.85 43.4 0.32 - 68.9 0.07 - 35.4 0.92 72.2 4.800 0.85 42.3 0.31 - 77.5 0.07 - 37.2 0.92 69.3 5.000 0.86 40.3 0.30 - 86.7 0.07 - 39.3 0.92 66.2 5.200 0.87 37.7 0.28 - 94.5 0.07 - 41.6 0.92 63.1 5.400 0.88 35.2 0.26 - 101.8 0.07 - 44.0 0.92 59.6 5.600 0.89 32.1 0.24 - 108.4 0.08 - 48.5 0.92 56.6 5.800 0.90 29.0 0.22 - 114.5 0.08 - 50.3 0.92 53.0 6.000 0.90 26.0 0.21 - 121.1 0.08 - 54.0 0.93 49.0 Data Book 525 V1.0, 2001-01-01 GaAs Components CLY 15 Permissible Pulse Load Ptot_max/Ptot_DC = f(tP) Total Power Dissipation Ptot = f(TS) EHT08939 5 W Ptot EHT08940 10 3 tp Ptot max Ptot DC tp D= T 4 T 10 2 3 D= 5 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 2 10 1 5 1 0 0 50 100 10 0 -6 10 C 150 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 tp TS Permissible Pulse Load Rtot_max = f(tP) EHT08941 10 2 K/W tp R thJS tp D= T T 10 1 D= 5 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 0 5 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 tp Data Book 526 V1.0, 2001-01-01 GaAs Components CLY 15 Package Outlines P-SOT223-4-2 (Small Outline Transistor) 1.6 0.1 6.5 0.2 0.1 max +0.2 acc. to DIN 6784 1 2 3.5 0.2 4 0.5 min B 7 0.3 3 0.1 15max A 3 0.28 0.04 2.3 0.7 0.1 4.6 M 0.25 A M B GPS05560 0.25 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Book 527 Dimensions in mm V1.0, 2001-01-01 GaAs MMIC CMH 82 Target Data Sheet * High-Linearity, Cellular LNA/Mixer IC for use in TDMA and CDMA Mobile Phones * Integrated bypass switch for LNA * GaAs PHEMT Process * Leadless 3.5 x 3.5 mm. SMT package * LO - Input power range: - 7.0 to 0 dBm * Operating voltage range: 2.7 to 5 V * Total current consumption: 22 mA ESD: Electrostatic discharge sensitive device, observe handling precautions! P-VQFN-20-3 Type Marking Ordering Code (tape and reel) Package CMH 82 on request Q62705-K0607 P-VQFN-20 Maximum Ratings Parameter Symbol Values min. max. Unit Supply voltage VDD 0 6 V DC-Voltage at RF Ports VRF - 0.3 0.3 V DC-Voltage at GND Ports VGND - 0.3 0.3 V DC-Voltage at CNTL Ports VCNTL 0 0.3 + VDD V Power into LO Inputs PIN,LO - 10 dBm Operating Temperature TA - 40 85 C Channel Temperature TCh - 150 C Storage Temperature Tstg - 55 150 C Data Book 528 V1.0, 2001-01-01 GaAs Components CMH 82 Thermal Resistance Parameter Symbol Value Unit Channel to soldering point (GND) RthChS t.b.d. K/W Pin Assignments and Functional Block Diagram CRFA CDMA CIFA CLNA CLOA AMPS EHA07520 Figure 1 Data Book Block Diagram 529 V1.0, 2001-01-01 GaAs Components CMH 82 Pin Configuration Pin No. Symbol Description 1 LO IN Mixer LO input 2 GND Ground 3 LO VDD Supply voltage for LO buffer amp 4 MIX OUT Mixer output to IF amplifier 5 AMPS IN AMPS IF amplifier input 6 CDMA IN CDMA IF amplifier input 7 GND Ground 8 IFA src IF amplifier FET source ground 9 CDMA OUT CDMA IF output 10 AMPS OUT AMPS IF output 11 Mode AMPS or CDMA IF mode control 12 RFA IN Downconverter input from image filter 13 RFA VDD Supply voltage for RFA 14 VDD Supply voltage 15 LNA VDD Supply voltage for LNA 16 LNA OUT Output of LNA 17 GND Ground 18 LNA IN RF input to LNA 19 Rcv Reduced current mode control 20 Gctl Control voltage for LNA gain selection Data Book 530 V1.0, 2001-01-01 GaAs Components CMH 82 Electrical Characteristics - LNA / Down-Converter Parameter Limit Values Unit min. typ. max. RF - frequency 869 - 894 MHz LO - frequency1) 919 - 1144 MHz IF frequency range 50 - 250 MHz LO power input - 7.0 - 0.0 dBm Supply voltage (VDD) 2.7 - 5.0 V High logic level (H) 2.4 2.7 0.3 + VDD V Low logic level (L) 0.0 - 0.3 V 1) Low-side LO can be achieved using external tuning. Data Book 531 V1.0, 2001-01-01 GaAs Components CMH 82 Electrical Characteristics - LNA / Down-Converter Test conditions: TA = 25 C, VDD = 2.7 V, PLO = - 7 dBm, fIF = 150 MHz Parameter Limit Values min. typ. max. Unit Mode - High Gain, High Linearity CDMA Total operating current - 22 - mA Conversion gain1) - 24.0 - dB Noise figure - 1.8 - dB Input IP3 - - 4.6 - dBm LNA Input IP3 - 10.5 - dBm Mode - High Gain, Reduced Current CDMA Total operating current - 16 - mA Conversion gain1) - 22.8 - dB Noise figure - 2.0 - dB Input IP3 - - 6.3 - dBm LNA Input IP3 - 7.0 - dBm Mode - Low Gain (LNA bypass) CDMA Total operating current - 12 - mA Conversion gain1) - 5.0 - dB Noise figure - 12.4 - dB Input IP3 - 11.1 - dBm Total operating current - 16 - mA Conversion gain1) - 20.3 - dB Noise figure - 2.0 - dB Input IP3 - - 5.1 - dBm Mode - AMPS 1) Assumes 2.5 dB loss for image filter. Data Book 532 V1.0, 2001-01-01 GaAs Components CMH 82 Truth Table Operating Mode Control Voltage Mode Ctl Gain Ctl Rcv Only High gain & linearity H H H High gain, low current H H L Low gain (LNA bypass) H L L AMPS L H L Data Book 533 V1.0, 2001-01-01 GaAs Components CMH 82 Electrical Characteristics of LNA Section Test conditions: TA = 25 C, VDD = 2.7 V Parameter Limit Values Unit min. typ. max. Operating current - 6 - mA Noise figure - 1.1 - dB Gain - 11.5 - dB Input/Output return loss - 10 - dB 3rd order input intercept point - 10.5 - dBm Mode - High Gain, High Linearity Mode - High Gain, Reduced Current Operating current - 4 - mA Noise figure - 1.2 - dB Gain - 11.0 - dB Input/Output return loss - 10 - dB 3rd order input intercept point - 7.0 - dBm Operating current - 0 - mA Noise figure - 6 - dB Gain - -6 - dB Input/Output return loss - 10 - dB 3rd order input intercept point - 24 - dBm Mode - Low Gain, By-Pass Mode Data Book 534 V1.0, 2001-01-01 GaAs Components CMH 82 Electrical Characteristics of Mixer Section Test conditions: TA = 25 C, VDD = 2.7 V, PLO = - 7 dBm, fLO = fRF + fIF, fIF = 150 MHz Parameter Limit Values min. Unit typ. max. Mode - High Gain, High Linearity CDMA Operating current - 16 - mA Conversion gain - 15.0 - dB Noise figure - 3.6 - dB 3rd order input intercept point - 4.5 - dBm RF input return loss - 10 - dB LO input return loss - 10 - dB IF output impedance1) - t.b.d. - Operating current - 12 - mA Conversion gain - 14.3 - dB Noise figure - 3.7 - dB 3rd order input intercept point - 2.4 - dBm RF input return loss - 10 - dB LO input return loss - 10 - dB IF output impedance1) - t.b.d. - Operating current - 12 - mA Conversion gain - 11.8 - dB Noise figure - 3.9 - dB 3rd order input intercept point - 3.7 - dBm RF input return loss - 10 - dB LO input return loss - 10 - dB IF output impedance1) - t.b.d. - Mode - Reduced Current CDMA Mode - AMPS 1) IF Output externally tuned to desired impedance. Data Book 535 V1.0, 2001-01-01 GaAs Components CMH 82 VDD VDD 16 LNA IN 15 14 13 12 18 Rcv 19 Gctl 20 1 3 4 5 6 11 Mode 10 AMPS OUT 9 CDMA OUT 8 VDD LO IN VDD Note: All external component values - t.b.d. Figure 2 EHA07521 Application Circuit Note: All external component values t.b.d. Data Book 536 V1.0, 2001-01-01 GaAs Components CMH 82 Package Outlines GVQ09290 P-VQFN-20 (Plastic Very Thin Profile Quad Flat Non Leaded Package) Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Book 537 Dimensions in mm V1.0, 2001-01-01 GaAs MMIC CMH 192 Target Data Sheet * High-Linearity, PCS LNA/Mixer IC for use in US and Korean band CDMA Mobile Phones * Integrated bypass switch for LNA * GaAs PHEMT Process * Leadless 3.5 x 3.5 mm. SMT package * LO - Input power range: - 7.0 to 0 dBm * Operating voltage range: 2.7 to 5 V * Total current consumption: 22 mA ESD: Electrostatic discharge sensitive device, observe handling precautions! P-VQFN-20-3 Type Marking Ordering Code (tape and reel) Package CMH 192 on request Q62705-K0608 P-VQFN-20 Maximum Ratings Parameter Symbol Values min. max. Unit Supply voltage VDD 0 6 V DC-Voltage at RF Ports VRF - 0.3 0.3 V DC-Voltage at GND Ports VGND - 0.3 0.3 V DC-Voltage at CNTL Ports VCNTL 0 0.3 + VDD V Power into LO Inputs PIN,LO - 10 dBm Operating Temperature TA - 40 85 C Channel Temperature TCh - 150 C Storage Temperature Tstg - 55 150 C Data Book 538 V1.0, 2001-01-01 GaAs Components CMH 192 Thermal Resistance Parameter Symbol Value Unit Channel to soldering point (GND) RthChS t.b.d. K/W Pin Assignments and Functional Block Diagram RFA Mixer IFA LNA LOA EHA07522 Figure 1 Data Book Block Diagram 539 V1.0, 2001-01-01 GaAs Components CMH 192 Pin Configuration Pin No. Symbol Description 1 LO IN LO input 2 GND Ground 3 LOA VDD Supply voltage for LO buffer amp 4 MIX OUT Mixer IF output 5 GND Ground 6 IF IN IF amplifier input 7 GND Ground 8 IFA src IF amplifier FET source ground 9 IFA OUT IF amplifier output 10 GND Ground 11 RFA VDD Supply voltage for RFA 12 RFA IN Mixer input from image filter 13 Rcv Current mode control 14 VDD Supply voltage 15 LNA OUT RF output of LNA 16 LNA VDD Supply voltage for LNA 17 GND Ground 18 LNA IN RF input to LNA 19 GND Ground 20 Gctl Gain mode control for LNA Data Book 540 V1.0, 2001-01-01 GaAs Components CMH 192 Electrical Characteristics - LNA / Down-Converter Parameter Limit Values Unit min. typ. max. RF - frequency / US 1930 - 1990 MHz LO - frequency / US 1780 - 1940 MHz RF - frequency / Korean 1840 - 1870 MHz LO - frequency / Korean 1590 - 1820 MHz IF frequency range 50 - 250 MHz LO power input - 7.0 - 0.0 dBm Supply voltage (VDD) 2.7 - 5.0 V High logic level (H) 2.4 2.7 0.3 + VDD V Low logic level (L) 0.0 - 0.3 V Data Book 541 V1.0, 2001-01-01 GaAs Components CMH 192 Electrical Characteristics - LNA / Down-Converter Test conditions: TA = 25 C, VDD = 2.7 V, PLO = - 7 dBm, fIF = 150 MHz Parameter Limit Values Unit min. typ. max. Total operating current - 22 - mA Conversion gain1) - 24.0 - dB Noise figure - 1.8 - dB Input IP3 - - 4.6 - dBm LNA Input IP3 - 10.5 - dBm Total operating current - 16 - mA Conversion gain1) - 22.8 - dB Noise figure - 2.0 - dB Input IP3 - - 6.3 - dBm LNA Input IP3 - 7.0 - dBm Total operating current - 12 - mA Conversion gain1) - 5.0 - dB Noise figure - 12.4 - dB Input IP3 - 11.1 - dBm Mode - High Gain, High Linearity Mode - High Gain, Reduced Current Mode - Low Gain (LNA bypass) 1) Assumes 2.5 dB loss for image filter. Truth Table Operating Mode Control Voltage Mode Ctl Gain Ctl Rcv Only High gain & linearity H H H High gain, low current H H L Low gain H L L Data Book 542 V1.0, 2001-01-01 GaAs Components CMH 192 Electrical Characteristics of LNA Section Test conditions: TA = 25 C, VDD = 2.7 V Parameter Limit Values Unit min. typ. max. Operating current - 6 - mA Noise figure - 1.1 - dB Gain - 11.5 - dB Input/Output return loss - 10 - dB 3rd order input intercept point - 10.5 - dBm Mode - High Gain, High Linearity Mode - High Gain, Reduced Current Operating current - 4 - mA Noise figure - 1.2 - dB Gain - 11 - dB Input/Output return loss - 10 - dB 3rd order input intercept point - 7 - dBm Operating current - 0 - mA Noise figure - 6 - dB Gain - -6 - dB Input/Output return loss - 10 - dB 3rd order input intercept point - 24 - dBm Mode - Low Gain, By-Pass Mode Data Book 543 V1.0, 2001-01-01 GaAs Components CMH 192 Electrical Characteristics of Mixer Section Test conditions: TA = 25 C, VDD = 2.7 V, PLO = - 7 dBm, fLO = fRF + fIF, fIF = 150 MHz Parameter Limit Values Unit min. typ. max. Operating current - 16 - mA Conversion gain - 15.0 - dB Noise figure - 3.6 - dB 3rd order input intercept point - 4.5 - dBm RF input return loss - 10 - dB LO input return loss - 10 - dB IF output impedance1) - t.b.d. - Operating current - 12 - mA Conversion gain - 14.3 - dB Noise figure - 3.7 - dB 3rd order input intercept point - 2.4 - dBm RF input return loss - 10 - dB LO input return loss - 10 - dB IF output impedance1) - t.b.d. - Mode - High Linearity Mode - Reduced Current 1) IF Output externally tuned to desired impedance. Data Book 544 V1.0, 2001-01-01 GaAs Components CMH 192 VDD 16 LNA IN Gctl 15 VDD Rcv 14 13 12 18 11 9 20 1 3 4 6 VDD IF OUT 8 VDD LO IN VDD Note: All external component values - t.b.d. Figure 2 EHA07523 Application Circuit Note: All external components values t.b.d. Data Book 545 V1.0, 2001-01-01 GaAs Components CMH 192 Package Outlines GVQ09290 P-VQFN-20 (Plastic Very Thin Profile Quad Flat Non Leaded Package) Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Book 546 Dimensions in mm V1.0, 2001-01-01 GaAs MMIC CMH 0819 Preliminary Data Sheet * High-Linearity, Dual-Band LNA/Mixer IC for use in CDMA Mobile Phones * Integrated bypass switch for LNAs * GaAs PHEMT Process * Leadless 3.5 x 4.5 mm. SMT package * LO - Input power down to: - 7.0 dBm * Operating voltage range: 2.7 to 5 V * Total current consumption: 17 mA ESD: Electrostatic discharge sensitive device, observe handling precautions! P-VQFN-24-3 Type Marking Ordering Code (tape and reel) Package CMH 0819 on request on request P-VQFN-24-3 Maximum Ratings Parameter Symbol Values min. max. Unit Supply voltage VDD 0 6 V DC-Voltage at RF Ports VRF - 0.3 0.3 V DC-Voltage at GND Ports VGND - 0.3 0.3 V DC-Voltage at CNTL Ports VCNTL 0 0.3 + VDD V Power into LO Inputs PIN,LO - 10 dBm Operating Temperature TA - 40 85 C Channel Temperature TCh - 150 C Storage Temperature Tstg - 55 150 C Data Book 547 V1.0, 2001-01-01 GaAs Components CMH 0819 Thermal Resistance Parameter Symbol Value Unit Channel to soldering point (GND) RthChS t.b.d. K/W Pin Assignments and Functional Block Diagram 20 19 18 17 16 15 14 13 21 12 22 11 23 10 24 9 1 2 3 4 5 6 7 8 EHT09249 PCS PIFA PLNA PRFA CELLULAR PLOA CDMA CLNA CIFA CRFA AMPS CLOA Figure 1 Data Book EHT09250 Block Diagram 548 V1.0, 2001-01-01 GaAs Components CMH 0819 Pin Configuration Pin No. Symbol Description 1 Clo in Mixer 1 LO Input (Cellular band) 2 Plo in Mixer 2 LO Input (PCS band) 3 Cloa VDD Supply voltage for mixer 1 LO buffer amp 4 Ploa VDD Supply voltage for mixer 2 LO buffer amp 5 IF Mtch IF amplifier external match 6 AMPS in AMPS IF amplifier input 7 CDMA in CDMA IF amplifier input 8 Ifa src IF amplifier FET source ground 9 GND Ground 10 CDMA out CDMA IF output 11 AMPS out AMPS IF output 12 Prfa VDD Supply voltage for mixer 2 RFA 13 Prfa in Mixer 2 input from image filter (PCS band) 14 Crfa in Mixer 1 input from image filter (Cellular band) 15 Crfa VDD Supply voltage for mixer 1 RFA 16 VDD Constant Vdd 17 Clna VDD Supply voltage for LNA 1 (Cellular band) 18 Clna out RF output of LNA 1 19 Plna out RF output of LNA 2 (PCS band) 20 Plna VDD Supply voltage for LNA 2 21 GND Ground 22 Plna in RF input to LNA 2 (PCS band) 23 Clna in RF input to LNA 1 (Cellular band) 24 Gain cntl Control voltage for LNA gain selection Data Book 549 V1.0, 2001-01-01 GaAs Components CMH 0819 Electrical Characteristics - LNA / Down-Converter Parameter Limit Values Unit min. typ. max. RF - frequency range 1 (Cellular) 869 - 894 MHz LO - frequency range 11) 919 - 1144 MHz RF - frequency range 2 (PCS) 1930 - 1990 MHz LO - frequency range 21) 1980 - 2240 MHz IF frequency range 50 - 250 MHz LO power input - 7.0 - 10.0 dBm Supply voltage (VDD) 2.7 - 5.0 V High logic level (H) 2.4 2.7 0.3 + VDD V Low logic level (L) 0.0 - 0.3 V 1) Low-side LO can be achieved using external tuning. Data Book 550 V1.0, 2001-01-01 GaAs Components CMH 0819 Electrical Characteristics - LNA / Down-Converter Test conditions: TA = 25 C, VDD = 2.7 V, PLO = - 7 dBm, fIF = 150 MHz Parameter Limit Values Unit min. typ. max. Total operating current - 17 - mA Conversion gain1) - 26.5 - dB Noise figure - 1.8 - dB Input IP3 - - 9.8 - dBm LNA Input IP3 - 8.0 - dBm Total operating current - 13 - mA Conversion gain1) - 25.5 - dB Noise figure - 2.1 - dB Input IP3 - - 8.9 - dBm LNA Input IP3 - 5.0 - dBm Total operating current - 12 - mA Conversion gain1) - 8.5 - dB Noise figure - 12.4 - dB Input IP3 - 8.2 - dBm Total operating current - 13 - mA Conversion gain1) - 20.5 - dB Noise figure - 2.4 - dB Input IP3 - - 6.8 - dBm Mode - High Gain, High Linearity Cellular and PCS CDMA Mode - High Gain, Reduced Current Cellular and PCS CDMA Mode - Low Gain (LNA bypass) Cellular and PCS CDMA Mode - Cellular AMPS 1) Assumes 2.5 dB loss for image filter. Data Book 551 V1.0, 2001-01-01 GaAs Components CMH 0819 Truth Table Operating Mode Supply Voltage Control Voltage PVdd CVdd Mode Ctl Gain Ctl Rcv Only PCS, High gain & linearity 2.7 V 0V H H L PCS, High gain, low current 2.7 V 0V H H H PCS, Low gain 2.7 V 0V H L L CELL, High gain & linearity 0V 2.7 V H H L CELL, High gain, low current 0V 2.7 V H H H CELL, Low gain 0V 2.7 V H L L CELL, AMPS 0V 2.7 V L H H Data Book 552 V1.0, 2001-01-01 GaAs Components CMH 0819 Electrical Characteristics of LNA Section Test conditions: TA = 25 C, VDD = 2.7 V Parameter Limit Values Unit min. typ. max. Operating current - 5 - mA Noise figure - 1.1 - dB Gain - 12 - dB Input/Output return loss - 10 - dB 3rd order input intercept point - 8.0 - dBm Mode - High Gain, High Linearity Cellular and PCS Mode - High Gain, Reduced Current Cellular and PCS Operating current - 3 - mA Noise figure - 1.2 - dB Gain - 11.5 - dB Input/Output return loss - 10 - dB 3rd order input intercept point - 5.0 - dBm Operating current - 0 - mA Noise figure - 6 - dB Gain - -6 - dB Input/Output return loss - 10 - dB 3rd order input intercept point - 30 - dBm Mode - Low Gain, By-Pass Mode Cellular and PCS Data Book 553 V1.0, 2001-01-01 GaAs Components CMH 0819 Electrical Characteristics of Mixer Section Test conditions: TA = 25 C, VDD = 2.7 V, PLO = - 7 dBm, fLO = fRF + fIF, fIF = 150 MHz Parameter Limit Values Unit min. typ. max. Operating current - 12 - mA Conversion Gain - 17.0 - dB Noise figure - 3.9 - dB 3rd order input intercept point - - 0.0 - dBm RF input return loss - 10 - dB LO input return loss - 10 - dB IF output impedance1) - t.b.d. - Operating current - 10 - mA Conversion Gain - 16.5 - dB Noise figure - 4.1 - dB 3rd order input intercept point - - 1.1 - dBm RF input return loss - 10 - dB LO input return loss - 10 - dB IF output impedance1) - t.b.d. - Operating current - 10 - mA Conversion Gain - 12.0 - dB Noise figure - 4.8 - dB 3rd order input intercept point - 1.9 - dBm RF input return loss - 10 - dB LO input return loss - 10 - dB IF output impedance1) - t.b.d. - Mode - High Gain, High Linearity PCS and Cellular CDMA Mode - Reduced Current PCS and Cellular CDMA Mode - Cellular AMPS 1) IF Output externally tuned to desired impedance. Data Book 554 V1.0, 2001-01-01 GaAs Components CMH 0819 Mode Cntl R CV Only C VDD PVDD VDD 20 PLNA IN 22 CLNA IN 23 Gain Cntl 19 18 17 16 15 14 13 24 1 2 3 4 5 6 7 8 12 PVDD 11 AMPS OUT 10 CDMA OUT VDD CLO IN PLO IN PVDD C VDD Note: All external component values - t.b.d. Figure 2 Data Book EHT09252 Application Circuit 555 V1.0, 2001-01-01 GaAs Components CMH 0819 Package Outlines GVQ09253 P-VQFN-24-3 (Plastic Very Thin Profile Quad Flat Non Leaded Package) Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Book 556 Dimensions in mm V1.0, 2001-01-01 GaAs MMIC CMY 82 Preliminary Data Sheet * GaAs receiver front-end for cellular CDMA applications * Adjustable gain control RF amplifier with 20 dB dynamic range * Low LO-power demand of typ. - 10 dBm with 2 LO buffer stages * Optional 1 or 2 LO-buffer stages * Flat leadless 4.5 x 3.5 mm2 SMT plastic package * RF-frequency range: 0.6 - 1.0 GHz * Operating voltage range: 2.6 to 5 V * Total current consumption: 14 mA ESD: Electrostatic discharge sensitive device, observe handling precautions! P-VQFN-24-3 Type Marking Ordering Code (tape and reel) Package CMY 82 on request on request P-VQFN-24-3 Data Book 557 V1.0, 2001-01-01 GaAs Components CMY 82 Maximum Ratings Parameter Port Symbol Limit Values min. max. Unit Supply Voltage 5, 11, 14 18, 19, 20 VDD 0 5 V Gate Control Voltage 3 VGC 0 5 V Power into RF Input 1 PRF IN - 10 5 dBm DC-Voltage at LO Input 6, 8 V6, V8 -3 0.5 V Power into LO Input 6, 8 PLO IN - 14 0 dBm DC-Voltage at Mixer RF-IF Port 15, 16 V15, V16 - 0.5 0.5 V Power into Mixer RF Port 16 PRFmix - 10 dBm Channel Temperature - TCh - 150 C Storage Temperature - Tstg - 55 150 C 24 RF IN 23 22 21 RF VGA 1 2 GAIN VGC 3 4 20 Current Mirror 19 I CTRL RFA Current Mirror To IF Buffer 18 I CTRL IFA 17 CMY 211 Mixer 16 Mixer RF IN VD LO2 5 L MAT LO Buf1 6 15 Mixer IF OUT 14 7 LO Buf2 LO IF Buffer 8 13 9 10 11 VS CAP IF OUT Figure 1 Data Book RF OUT VD LO IF IN 12 EHT09234 Block Diagram 558 V1.0, 2001-01-01 GaAs Components CMY 82 Electrical Characteristics - Adjustable Gain Control RF Amplifier Parameter Comment Limit Values min. RF - Frequency range External match 600 typ. max. - 1000 Unit MHz Test Conditions TA = 25 C; VDD = 3 V; Vlctrl RFA = 3 V; VGC = 2.0 V; fRF = 850 MHz; PLO = - 8 dBm; ZS = ZL = 50 ; unless otherwise specified Parameter, Test Conditions Symbol Limit Values min. typ. max. Unit Operating Current1) IOP - 5 - mA Maximum Gain (VGC = 2.0 V) Gmax - 15 - dB Dynamic (VGC = 0.5 ... 2.0 V) G - 20 - dB Noise Figure at maximum gain F - 1.5 - dB RF Input -/ IF Output return loss at maximum gain (external matching required) RFIrl/IFOrl 8 - - dB 3rd Order Input Intercept Point at Gmax IIP3 - 5 - dBm 3rd Order Output Intercept Point (VGC = 0.5 ... 2.0 V) OIP3 - 18 - dBm 1) LNA uses an LO-power feeded negative voltage generator; therefore a minimum LO-power of - 14 dBm is required to operate the LNA. Data Book 559 V1.0, 2001-01-01 GaAs Components CMY 82 Electrical Characteristics - Mixer Section Parameter Comment Limit Values min. typ. max. Unit RF - Frequency range External match 600 - 1000 MHz LO - Frequency range External match 500 - 1500 MHz IF Frequency range External match 45 - 250 MHz Test Conditions TA = 25 C; VDD = 3 V; Vlctrl IFA = 3 V; fRF = 850 MHz; fLO = 740 MHz; PLO = - 8 dBm; fIF = 110 MHz; ZS = ZL = 50 ; unless otherwise specified Parameter Symbol Limit Values min. typ. max. Unit Operating Current (Mixer + 1 LO driver stage) IOP - 7 - mA Operating Current (Mixer + 2 LO driver stage) IOP - 9 - mA Conversion Gain GC - 10 - dB SSB Noise Figure FSSB - 8.5 - dB RF Input -/ IF Output return loss (external matching required) RFIrl/IFOrl 10 - - dB 3rd Order Input Intercept Point IIP3 - 10 - dBm Data Book 560 V1.0, 2001-01-01 GaAs Components CMY 82 Electrical Characteristics - Down-Converter (assuming SAW filter with 2.5 dB insertion loss) Parameter Comment Limit Values min. typ. max. Unit RF - Frequency range External match 600 - 1000 MHz LO - Frequency range External match 500 - 1500 MHz IF Frequency range External match 45 - 250 MHz Typical Performance TA = 25 C; VDD = 3 V; Vlcrtl RFA = Vlcrtl IFA = 3 V; VGC = 2.0 V; fRF = 850 MHz; fLO = 740 MHz; PLO = - 8 dBm; fIF = 110 MHz; ZS = ZL = 50 ; unless otherwise specified Parameter Symbol Limit Values min. typ. max. Unit Total operating current (2 LO driver stages) IOP - 14 - mA Conversion Gain (incl. SAW) GC - 22.5 - dB SSB Noise Figure FSSB - 2.5 - dB RF Input -/IF Output return loss (external matching required) RFIrl/IFOrl 8 - - dB 3rd Order Input Intercept Point at maximum gain IIP3 - - 2.5 - dBm Data Book 561 V1.0, 2001-01-01 GaAs Components CMY 82 VD LNA 24 RF LNA Input L1 2 VGAIN C8 4 C9 VD LO2 L7 L8 21 20 Current Mirror 19 Current Mirror To IF Buffer CMY 211 Mixer 18 GAIN 3 22 RF VGA 1 C1 R1 23 LO Input C3 L3 R2 LO Buf1 I CTRL R3 I CTRL 16 L4 15 L5 C 13 10 11 Mixer Input VD IF Amp 13 9 IFA C4 IF Buffer 8 RFA C5 14 LO Buf2 RF LNA Output 17 7 L9 L2 C 12 5 6 C2 12 L6 C7 0 Link VD LO C6 C 10 L 10 C 11 Mixer/ CMY 82 IF Output EHT09235 Figure 2 Data Book Test Circuit 562 V1.0, 2001-01-01 GaAs Components CMY 82 X2 VDD1 SAW RF_IN RF_OUT L2 C3 C3 L3 L3 CMY82_IN C2 L3 CMY82 SAW L5 L7 C3 GAIN C 11 L4 C3 C3 L6 C3 C3 L9 C? C7 L3 C3 L 11 L8 C3 CMY82 KA C3 X6 LO_IN X3 C5 C3 C3 VDD_L02 C3 C3 C3 C3 C3 X1 VDD IFA CMY82/MIX OUT X4 MIX_IN X72/NA/1920/231 X5 EHT09293 Figure 3 Data Book PCB Layout 563 V1.0, 2001-01-01 GaAs Components CMY 82 General Description and Notes for CMY 82 CMY 82 is a general purpose receiver front-end device designed for multiple applications such as cellular mobile phones, ISM bands and pagers. Due to its excellent intermodulation characteristics and its low current consumption, CMY 82 is particularly suited for CDMA receiver applications. The device combines an RF amplifier with variable gain and an ultra-linear mixer with 2 LO-driver stages in a flat leadless P-VQFN-24-3 package of less than 1 mm height. The input and output matching of the RF amplifier can be adapted externally within a frequency range from 600 to 1000 MHz. The mixer section of CMY 82 combines low conversion losses and excellent intermodulation characteristics with low LO- and DC-power demand. The internal level controlled LO-buffer enables a good performance over a wide LO level range. If higher input LO power is available, the first LO amplifying stage can optionally be bypassed by inserting the LO signal at pin 6 instead of pin 8, resulting in a reduced current consumption by 2 mA. The input and output matching of the IF amplifier can be adapted externally within a frequency range from 45 to 250 MHz. By external elements, its input intercept point and therefore the overall intermodulation performance can be increased at the expense of gain. An integrated negative voltage generator allows to operate the device with one positive supply voltage. For full functionality operation of the device, the operating current of the entire MMIC is typically 14 mA. Data Book 564 V1.0, 2001-01-01 GaAs Components CMY 82 Package Outlines GVQ09253 P-VQFN-24-3 (Plastic Very Thin Profile Quad Flat Non Leaded Package) Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Book 565 Dimensions in mm V1.0, 2001-01-01 GaAs MMIC CMY 91 Data Sheet * GaAs mixer with integrated IF-amplifier for mobile communication * Frequency range 0.8 GHz to 2.5 GHz * Very low current consumption (1 mA typ.) * Single positive supply voltage * Operating voltage range: 2.7 to 6 V * Miniature package MW-6 based on SOT-23 ESD: Electrostatic discharge sensitive device, observe handling precautions! MW-6 Type Marking Ordering Code (taped) Package1) CMY 91 M2 Q62702-M9 MW-6 1) Dimensions see Page 579. Maximum Ratings Parameter Symbol Value Unit Drain-source voltage VIF-GND 8 V Gate-source voltage range VLO-GND -5...0 V Drain current IIF 20 mA RF- / LO-peak current + IRF + ILO 2 mA Channel temperature TCh 150 C Storage temperature range Tstg - 55 ... + 150 C Total power dissipation (TS = t.b.d. C)1) Ptot 160 mW Parameter Symbol Value Unit Channel-soldering point GND RthChS 350 K/W 1) TS: Temperature measured at soldering point GND. Thermal Resistance Data Book 566 V1.0, 2001-01-01 GaAs Components CMY 91 RF IN 6 CAP 1 1 3 4 LO IN Figure 1 IF OUT 2, 5 GND EHT09004 Block Diagram Electrical Characteristics TA = 25 C, VD = 3 V, unless otherwise specified. Characteristics of 900 MHz test and application circuit see Page 573 and Page 576. Parameters Drain-source breakdown voltage Symbol V(BR) IF-GND Limit Values min. typ. max. 8 - - Unit Test Conditions V IIF = 500 A VLO-GND = 0 V VRF-GND = 4 V CAP-pin not connected Drain current ID 0.8 1 1.4 mA VRF-GND = 0 V VLO-GND = 0 V VIF-GND = 3 V CAP-pin not connected Conversion gain GC - 5.5 - dB fRF = 920 MHz fLO = 965 MHz fIF = 45 MHz PLO = - 3 dBm Single sideband noise figure FSSB - 9 - dB fRF = 920 MHz fLO = 965 MHz fIF = 45 MHz PLO = - 3 dBm Data Book 567 V1.0, 2001-01-01 GaAs Components CMY 91 Electrical Characteristics (cont'd) TA = 25 C, VD = 3 V, unless otherwise specified. Characteristics of 900 MHz test and application circuit see Page 573 and Page 576. Parameters Symbol Limit Values min. typ. max. Unit Test Conditions 3rd order intermodulation IP3 - -2 - dBm fRF = 920 MHz fLO = 965 MHz fIF = 45 MHz PLO = - 3 dBm LO/RF isolation IsoLO/RF - 11 - dB f = 965 MHz Electrical Characteristics TA = 25 C, VD = 3 V; CAP-pin connected to ground by 680 resistor. Parameters Symbol Limit Values min. typ. max. Unit Test Conditions Drain current ID - 2.5 - mA VRF-GND = 0 V VLO-GND = 0 V VIF-GND = 3 V Conversion gain GC - 9.5 - dB fRF = 920 MHz fLO = 965 MHz fIF = 45 MHz PLO = - 3 dBm Single sideband noise figure FSSB - 8.0 - dB fRF = 920 MHz fLO = 965 MHz fIF = 45 MHz PLO = - 3 dBm 3rd order intermodulation IP3 - 0 - dBm fRF = 920 MHz fLO = 965 MHz fIF = 45 MHz PLO = - 3 dBm LO/RF isolation IsoLO/RF - 11 - dB f = 965 MHz Not used ports were terminated by 50 . Please make sure that LO-signal is clean of noise and spurious at f = fLO fIF. Data Book 568 V1.0, 2001-01-01 GaAs Components CMY 91 Electrical Characteristics TA = 25 C, VD = 3 V unless otherwise specified. Characteristics of 1450 MHz application circuit see Page 574 and Page 576. Parameters Drain-source breakdown voltage Symbol V(BR) IF-GND Limit Values min. typ. max. 8 - - Unit Test Conditions V IIF = 500 A VLO-GND = 0 V VRF-GND = 4 V CAP-pin not connected Drain current ID 0.8 1 1.4 mA VRF-GND = 0 V VLO-GND = 0 V VIF-GND = 3 V CAP-pin not connected Conversion gain GC - 5.5 - dB fRF = 1450 MHz fLO = 1350 MHz fIF = 100 MHz PLO = - 3 dBm Single sideband noise figure FSSB - 10 - dB fRF = 1450 MHz fLO = 1350 MHz fIF = 100 MHz PLO = - 3 dBm 3rd order intermodulation IP3 - -2 - dBm fRF = 1450 MHz fLO = 1350 MHz fIF = 100 MHz PLO = - 3 dBm LO/RF isolation IsoLO/RF - 8 - dB f = 1350 MHz Data Book 569 V1.0, 2001-01-01 GaAs Components CMY 91 Electrical Characteristics TA = 25 C, VD = 3 V; CAP-pin connected to ground by 680 resistor. Parameters Symbol Limit Values min. typ. max. Unit Test Conditions Drain current ID - 2.5 - mA VRF-GND = 0 V VLO-GND = 0 V VIF-GND = 3 V Conversion gain GC - 7.5 - dB fRF = 1450 MHz fLO = 1350 MHz fIF = 100 MHz PLO = - 3 dBm Single sideband noise figure FSSB - 9.5 - dB fRF = 1450 MHz fLO = 1350 MHz fIF = 100 MHz PLO = - 3 dBm 3rd order intermodulation IP3 - 0 - dBm fRF = 1450 MHz fLO = 1350 MHz fIF = 100 MHz PLO = - 3 dBm LO/RF isolation IsoLO/RF - 8 - dB f = 1350 MHz Not used ports were terminated by 50 . Data Book 570 V1.0, 2001-01-01 GaAs Components CMY 91 Electrical Characteristics TA = 25 C, VD = 3 V unless otherwise specified. Characteristics of 1900 MHz application see Page 575 and Page 577. Parameters Drain-source breakdown voltage Symbol V(BR) IF-GND Limit Values min. typ. max. 8 - - Unit Test Conditions V IIF = 500 A VLO-GND = 0 V VRF-GND = 4 V CAP-pin not connected Drain current ID 0.8 1 1.4 mA VRF-GND = 0 V VLO-GND = 0 V VIF-GND = 3 V CAP-pin not connected Conversion gain GC - 5 - dB fRF = 1900 MHz fLO = 1800 MHz fIF = 100 MHz PLO = - 3 dBm Single sideband noise figure FSSB - 10.5 - dB fRF = 1900 MHz fLO = 1800 MHz fIF = 100 MHz PLO = - 3 dBm 3rd order intermodulation IP3 - -2 - dBm fRF = 1900 MHz fLO = 1800 MHz fIF = 100 MHz PLO = - 3 dBm LO/RF isolation IsoLO/RF - 8 - dB f = 1800 MHz Data Book 571 V1.0, 2001-01-01 GaAs Components CMY 91 Electrical Characteristics TA = 25 C,VD = 3 V; CAP-pin connected to ground by 680 resistor. Parameters Symbol Limit Values min. typ. max. Unit Test Conditions Drain current ID - 2.5 - mA VRF-GND = 0 V VLO-GND = 0 V VIF-GND = 3 V Conversion gain GC - 7.5 - dB fRF = 1900 MHz fLO = 1800 MHz fIF = 100 MHz PLO = - 3 dBm Single sideband noise figure FSSB - 9.5 - dB fRF = 1900 MHz fLO = 1800 MHz fIF = 100 MHz PLO = - 3 dBm 3rd order intermodulation IP3 - 0 - dBm fRF = 1900 MHz fLO = 1800 MHz fIF = 100 MHz PLO = - 3 dBm LO/RF isolation IsoLO/RF - 8 - dB f = 1800 MHz Not used ports were terminated by 50 . Data Book 572 V1.0, 2001-01-01 GaAs Components CMY 91 RF IN 920 MHz 100 pF VDC = 3 V Prined Inductor 680 2) 1 nF 470 nH 3) 33 pF 1 nF 47 pF 27 nH 1) 4.7 pF IF OUT 45 MHz LO IN 965 MHz Figure 2 1) 2) 3) EHT09005 900 MHz Measurement and Application Circuit Epcos SIMID 01-coil; Ordering code: B82412-A3270-M Optional resistor increases IF-amplifier operating current and improves conversion gain and intermodulation performance (minimum value: 27 ) Epcos SIMID 01-coil; Ordering code: B82412-A3471-K Data Book 573 V1.0, 2001-01-01 GaAs Components CMY 91 RF IN 1450 MHz 100 pF VDC = 3 V Prined 1) Inductor 680 2) 1 nF 220 nH 3) 15 pF 1 nF 18 pF Prined 1) Inductor IF OUT 100 MHz 3.3 nH LO IN 1350 MHz 3.3 pF EHT09006 Figure 3 1) 2) 3) 1450 MHz Measurement and Application Circuit Tune for optimum match Optional resistor increases IF-amplifier operating current and improves conversion gain and intermodulation performance (minimum value: 27 ) Epcos SIMID 01-coil; Ordering code: B82412-A3221-K Data Book 574 V1.0, 2001-01-01 GaAs Components CMY 91 RF IN 1900 MHz 100 pF VDC = 3 V Prined 1) Inductor 680 2) 1 nF 220 nH 3) 15 pF 1 nF 18 pF Prined 1) Inductor 2.2 pF IF OUT 100 MHz LO IN 1800 MHz Figure 4 1) 2) 3) EHT09007 1900 MHz Measurement and Application Circuit Tune for optimum match Optional resistor increases IF-amplifier operating current and improves conversion gain and intermodulation performance (minimum value: 27 ) Epcos SIMID 01-coil; Ordering code: B82412-A3221-M Data Book 575 V1.0, 2001-01-01 GaAs Components CMY 91 PCB - Layouts for Application Circuits LO 4.7 pF CMY 91 27 nH CMY 91 1 nF CMY 91 33 pF 47 pF IF RF 680 1 nF 100 pF LO 470 nH EHT09009 IF Actual size RF EHT09008 Figure 5 900 MHz - Application Board Soldered shorting line for tuning the LO-match LO 3.3 pF 3.3 nH CMY 91 CMY 91 220 nH 1 nF 15 pF CMY 91 IF 18 pF RF EHT09011 680 1 nF 100 pF LO IF Actual size RF EHT09010 Figure 6 1) 1450 MHz - Application Board1) PCB - data: Glass fiber epoxy board (double sided), r = 4.8, thickness = 1 mm Data Book 576 V1.0, 2001-01-01 GaAs Components CMY 91 Soldered shorting line for tuning the LO-match CMY 91 2.2 pF LO CMY 91 LO 220 nH 15 pF CMY 91 1 nF IF RF EHT09013 680 1 nF 100 pF 18 pF IF Actual size RF EHT09012 Figure 7 1) 1900 MHz - Application Board1) PCB - data: Glass fiber epoxy board (double sided), r = 4.8, thickness = 1 mm Data Book 577 V1.0, 2001-01-01 GaAs Components CMY 91 Package Parameters Dim. min. nom. max. Gradient Remark A - - 1.1 - - A1 - - 0.1 - - A2 - - 1.0 - - b - 0.3 - - - b1 - 0.6 - - - c 0.08 - 0.15 - - D 2.8 - 3.0 - - E 1.2 - 1.4 - - |e| - 0.95 - - - |e1| - 1.9 - - - HE - - 2.6 - - LE - - 0.6 - - a - - - max. 10 1) q - - - 2 ... 30 - 1) Applicable on all sides. Data Book 578 V1.0, 2001-01-01 GaAs Components CMY 91 Package Outlines MW-6 (Special Package) 1.1 max 2.9 0.1 0.6 +0.1 -0.05 5 4 1 2 3 +0.2 acc. to DIN 6784 10max 1.3 0.1 0.3 +0.1 -0.05 6 2.6 max 10max A 0.1 max 0.08...0.15 1.9 0.25 M 2... 30 B 0.20 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Book 579 M A GPW05794 B Dimensions in mm V1.0, 2001-01-01 GaAs MMIC CMY 191 Preliminary Data Sheet Ultralinear Mixer with integrated high IP3I LNA and LO-Buffer for PCS-CDMA receiver applications. * Bypass switch for LNA integrated. * Mixer Input IP3 of typical 24 dBm. * LNA + Mixer mode (3 V; 15 mA; f = 1.96 GHz; @ GC = 8.0 dB; IP3I = + 5.5 dBm; NF = 3.5 dB typical) * RF-Frequency Range 1.9 GHz ... 2.0 GHz * Operating Voltage Range: 2.6 to 5 V * Total current consumption of typical 21 mA ESD: Electrostatic discharge sensitive device, observe handling precautions! * P-TSSOP-10-2 Type Marking Ordering Code (tape and reel) Package1) CMY 191 CMY 191 Q62702-M23 P-TSSOP-10-2 1) LNA uses an LO-Power feeded negative voltage generator; Therefore an LO-power of - 5 dBm minimum is required to operate the LNA. Maximum Ratings Parameter Port Symbol Limit Values min. max. Unit Supply Voltage 6.9 VDD 0 5 V DC-Voltage at LO Input 8 V8 -3 0.5 V DC-Voltage at Mixer IF Port 10 V10 - 0.5 + 0.5 V Power into Mixer IF Port 10 PRF - 10 dBm Power into LO Input 8 PIN, LO -5 10 dBm Channel Temperature - TCh - 150 C Storage Temperature - Tstg - 55 150 C Data Book 580 V1.0, 2001-01-01 GaAs Components CMY 191 Thermal Resistance Parameter Symbol Values Unit Channel to Soldering Point (GND) RthChS t.b.d. K/W CMY 191 VNEG OUT LNA Current Control LNA Match 2 1 10 2 9 3 8 LNA Match 1 4 RF IN Mixer IF OUT Mixer VDD Mixer LO IN 7 LNA Switch 5 6 LNA VDD 11 GND (Back Side) EHT08960 Figure 1 Data Book Block Diagram 581 V1.0, 2001-01-01 GaAs Components CMY 191 Electrical Characteristics - Down-Converter Parameter Comment Limit Values min. typ. max. Unit RF - frequency range external match 1.90 - 2.05 GHz LO - Frequency range external match 0.5 - 2.5 GHz IF Frequency range external match 0.01 - 1 GHz Test Conditions TA = 25 C; VDD = 3 V, VCurrent ctrl. = 3 V; VSwitch ctrl = 3 V; fRF = 1960 MHz; fLO = 1750 MHz; PLO = 0 dBm; fIF = 210 MHz, ZS = ZL = 50 ; unless otherwise specified Characteristics Symbol Limit Values min. typ. max. Unit Total operating Current (LNA + Mixer) (LNA - current tunable by external resistor) IOP - 21 - mA Conversion Gain GC - 8.0 - dB SSB Noise Figure FSSB - 3.5 - dB RF Input -/ IF output return loss RFIrl/IFOrl - > 10 - dB 3rd Order Input Intercept Point IP3I - 5.5 - dBm Data Book 582 V1.0, 2001-01-01 GaAs Components CMY 191 Electrical Characteristics of Mixer Section "Bypass Mode" TA = 25 C; VDD = 3 V, Pin 1 "VCurrent ctrl" open; VSwitch ctrl = 0 V; fRF = 1960 MHz; fLO = 1750 MHz; PLO = 0 dBm; fIF = 210 MHz, unless otherwise specified. Characteristics Symbol Limit Values min. typ. max. Unit Test Conditions Operating Current IOP - 6 - mA - Conversion Loss LC - 8.5 - dB - SSB Noise Figure FSSB - 9.0 - dB - - 52 - dBc PRF1 = - 3 dBm PRF2 = - 3 dBm fRF1 = 1959.5 MHz fRF2 = 1960.5 MHz 2 Tone 3rd Order IMD dIM3 RF Input -/IF output return loss RFIrl/IFOrl - > 10 - dB - 3rd Order Input Intercept Point IP3IN 24 - dBm - Data Book - 583 V1.0, 2001-01-01 GaAs Components CMY 191 C3 1 nF I LNA Control R 1 Current Control 6.2 k L5 C2 5.6 nH 1 pF L2 CMY 191 C13 3.3 nH 1 10 Mixer 9 VDD LNA OUT 2 IF OUT C4 Mixer IF OUT L3 1 nF 1.8 pF 2.7 nH LNA Match 2 3 Mixer 8 LO IN L1 C12 3.3 nH LNA Match 1 4 RF IN 1 nF C6 L4 18 pF 2.7 nH LO IN C7 11 R2 1 nF 100 k C11 C10 LNA 6 VDD RF IN 5 1 nF C8 18 pF LNA 7 Switch 1 pF C1 C5 LNA ON / OFF VDD 47 pF 3.3 F C9 1 nF GND EHT08963 Figure 2 Data Book Test Circuit 584 V1.0, 2001-01-01 GaAs Components CMY 191 IF OUT LNA Current C5 L3 C8 LO IC1 C6 C1 C7 L4 C 11 R2 RF CMY 191 L2 C2 Infineon Tech. 9/99 LO IN C12 L1 RF IN L5 C4 R1 C3 C13 IF C9 VDD Switch C10 EHT08964 Figure 3 Data Book PCB Layout 585 V1.0, 2001-01-01 GaAs Components CMY 191 General Description and Notes for CMY 191 CMY 191 is downconverter device for PCS-CDMA receiver applications. It combines a bypassable high IP3 single stage LNA and an ultralinear mixer + LO-driver in a P-TSSOP-10-2 package. An integrated negative voltage generator allows to operate the device with one positive supply voltage only. The LNA operating current can be changed by a discrete resistor R1. If the operating current of the LNA is changed significantly, the RF-input match might have to be optimised. This can be done by changing the position of C9 and/or L1 on the PCB or tuning the value of L1. Placing C9 closer to the mixer device rises gain, but lowers IP3 and input match. Moving L1 closer to CMY 191 rises the resonance frequency of the input match. In order to avoid unwanted variations of the operating current, the voltage applied to the current control pin should be stable. Switch control (pin 7) controls the bypass and connects/disconnects LNA RF path. It does not turn on/off the LNA. To shut down the LNA, you have to disconnect LNA Current Control (pin 1), which is usually connected to VDD or a D/A converter with series resistor R1. Please note that even in shut down operation a typical LNA rest current of 20 A may occur. If LNA Current Control (pin 1) is not open but connected to ground, the LNA shut down current may increase to about 100 A typ.. The mixersection of CMY 191 is an all port single ended general purpose Down-Converter. It combines small conversion losses and excellent intermodulation characteristics with a lowdemand of LO- and DC-power. The internal level controlled LO-Buffer enables a good performance over a wide LO level range. The Conversion Noise Figure Fssb in bypass mode is corresponding with the value of Conversion Loss Lc. The attached application hints will help to tune the mixersection for best performance. Application Hints * Parallel resonant circuit L2, C4 at pin 10 should be tuned for fRF and passes through fIF. * L3 and C5 are tuned for lowest operating current at used LO-frequency * Ports 10 and 8 have to be decoupled from DC * Parasitic capacitance to GND at port 10 must be as low as possible * Since the input impedance of port 1 can be slightly negative at lower frequencies, the source reflection coefficient should be kept below 0.8 (Z0 = 50 within this frequency range). * The LO signal must be clean of noise and spurious at the frequencies fLO fIF. Data Book 586 V1.0, 2001-01-01 GaAs Components CMY 191 Package Outlines 0.5 0.1 A A 0.22 0.05 0.08 M 6 max. 0.42 +0.15 -0.1 ABC 4.9 0.25 A B C 1.6 2.4 B +0.08 0.125 -0.05 3 0.1 H 0.09 0.15 max. 0.85 0.1 1.1 max. P-TSSOP-10-2 (Plastic Thin Shrink Small Outline Package) 3 0.1 C GPS09230 Index Marking Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Book 587 Dimensions in mm V1.0, 2001-01-01 GaAs MMIC CMY 200 Data Sheet * * * * * * * * * Ultralinear Down-converter 1200 MHz to 40 MHz Operating Voltage Range: 3 to 6 V Very low Current Consumption, typ. 45 mA Single ended Input and Output RF- and IF-Port Impedance close to 50 Very wide LO-Level Range All Gold Metallization Chip fully passivated Very small Outlines MW-6 ESD: Electrostatic discharge sensitive device Observe handling Precautions! Type Marking Ordering Code (tape and reel) Package CMY 200 M1 Q62702-M6 MW-6 Maximum Ratings Parameter Symbol Limit Values min. max. Unit Supply Voltage to LO-Amp VD, LO 0 6 V Supply Voltage to IF-Amp VD, IF 0 6 V DC-Voltage to RF-Port VRF -6 +6 V DC-Voltage to Input LO-Amp VIN, LO -3 0 V RF Input Power PIN, RF - 10 dBm LO Input Power PIN, LO - 10 dBm Channel Temperature TCh - 150 C Storage Temperature Tstg - 55 150 C Data Book 588 V1.0, 2001-01-01 GaAs Components CMY 200 Thermal Resistance Parameter Symbol Value Unit Channel to Soldering Point (GND) RthChS 100 K/W Electrical Characteristics TA = 25 C; VDD = 5 V; see test circuit; fRF = 1224 MHz; fLO = 1185 MHz; PLO = - 2 dBm; fIF = 39 MHz, unless otherwise specified Parameters Symbol Limit Values Unit Test Conditions min. typ. max. Operating Current IOP 25 50 70 mA - Required LO-Power PLO - -5 -2 dBm - Conversion Gain GMIX 6 8 - dB - Single-Side-Band Noise Figure FSSB - 8 10 dB - 3rd Order IMD 2 Tones dIM3 - - 65 - 60 dBc PIN = 2 x (- 15 dBm); fRF1 = 1224 MHz; fRF2 = 1219 MHz 3rd Order Input Intercept Point IP3IN 18 21.5 - dBm PIN = - 12 dBm; 2 Tones 5 MHz apart LO Leakage at RFPort PLO, RF - -9 - dBm - - 17 - dBm - P- 1 dB Output Power P- 1 dB, out Data Book 589 V1.0, 2001-01-01 GaAs Components CMY 200 VDD = + 5 V CMY 200 RF IN 50 LO IN 50 L1 C1 L3 5 6 4 VD IF 1 3 VD LO C3 IF OUT 50 L2 C2 2 EHT08966 Figure 1 Test Circuit L1 L2 L3 C1 C2 C3 nH nH H pF pF nF 61) 122) 22 22 47 1 1) 2) Approximate value for RF-frequency 1224 MHz (the value can be tuned for minimum FSSB at RF-frequency). Approximate value for LO-frequency 1185 MHz (the value is tuned for max. gain of the LO-amplifier at LOfrequency; Indicator is e.g. a minimum DC-current consumption into port 3 at very low LO-power (< - 10 dBm) into port 1 or a maximum available GMIX at very low LO-power (< - 10 dBm) into port 1). Data Book 590 V1.0, 2001-01-01 GaAs Components CMY 200 Operating Current IOP = f(VDD) PLO = - 2 dBm IOP Operating Current IOP = f(PLO) VDD = + 5 V EHT08967 100 mA IOP 80 80 70 70 60 60 50 50 40 40 30 30 20 20 10 10 0 0 1 2 3 4 5 6 7 8 EHT08968 100 mA 0 -10 -8 -6 -4 -2 0 V 10 2 4 VDD PLO Conversion Gain GMIX = f(VDD) PLO = - 2 dBm, fRF = 1224 MHz; fLO = 1185 MHz GMIX SSB Noise Figure FSSB = f(VDD) PLO = - 2 dBm; fRF = 1224 MHz, fLO = 1185 MHz EHT08969 10 dB FSSB 8 7 7 6 6 5 5 4 4 3 3 2 2 1 1 0 1 2 3 4 5 6 7 8 0 V 10 VDD Data Book EHT08970 10 dB 8 0 6 dBm 10 0 1 2 3 4 5 6 7 8 V 10 VDD 591 V1.0, 2001-01-01 GaAs Components CMY 200 Conversion Gain GMIX = f(PLO) VDD = 5 V, fRF = 1224 MHz; fLO = 1185 MHz GMIX SSB Noise Figure FSSB = f(PLO) VDD = + 5 V; fRF = 1224 MHz; fLO = 1185 MHz EHT08971 10 dB FSSB 8 8 7 7 6 6 5 5 4 4 3 3 2 2 1 1 0 -10 -8 -6 -4 -2 0 2 4 EHT08972 10 dB 0 -10 -8 -6 -4 -2 0 6 dBm 10 2 4 6 dBm 10 PLO PLO Third Order IMD IFOUT = f(f) PIN = 2 x - 15 dBm, PLO = - 2 dBm Third Order IMD dIM3 = f(VDD) PIN = 2 x - 15 dBm, PLO = - 2 dBm EHT08973 0 dBm IFout dIM3 -20 -20 -30 -30 -40 -40 -50 -50 -60 -60 -70 -70 -80 -80 -90 -90 -100 30 Data Book 35 40 45 -100 50 MHz 55 f EHT08974 0 dBc 0 1 2 3 4 5 6 7 8 V 10 VDD 592 V1.0, 2001-01-01 GaAs Components CMY 200 Third Order IMD dIM3 = PLO VDD = + 5 V, PIN = - 12 dBm Tones 5 MHz apart Power at 1 dB Gain Compression P- 1 dBm = f(VDD), PLO = - 2 dBm; fRF = 1224 MHz; fLO = 1185 MHz EHT08975 0 dBc P1dB dIM3 -20 16 -30 14 -40 12 -50 10 -60 8 -70 6 -80 4 -90 2 -100 -10 -8 -6 -4 -2 0 2 4 0 6 dBm10 PLO Data Book EHT08976 20 dBm POUT PIN 0 1 2 3 4 5 6 7 8 V 10 VDD 593 V1.0, 2001-01-01 GaAs Components CMY 200 Conversion Gain GMIX = f(fLO) PLO = - 2 dBm; fRF = fLO + fIF; fIF = 39 MHz GMIX EHT08977 10 dB FSSB 8 7 7 6 6 5 5 4 4 3 3 2 2 1 1 1 1.1 1.2 0 1.3 GHz 1.4 f LO Conversion Gain GMIX = f(fIF) fLO = 1185 MHz, PLO = - 2 dBm; fRF = fLO + fIF FSSB 8 7 7 6 6 5 5 4 4 3 3 2 2 1 1 0 20 40 60 0 MHz 100 1.2 1.3 GHz 1.4 f LO EHT08980 0 20 40 60 MHz 100 f IF f IF Data Book 1.1 10 dB 8 0 1 SSB Noise Figure FSSB = f(fIF) fLO = 1185 MHz; PLO = - 2 dBm; fRF = fLO + fIF EHT08979 10 dB EHT08978 10 dB 8 0 GMIX SSB Noise Figure FSSB = f(fLO) PLO = - 2 dBm; fRF = fLO + fIF; fIF = 39 MHz 594 V1.0, 2001-01-01 GaAs Components CMY 200 Typical Reflexion Coefficients of CMY 200, Z0 = 50 Input Impedance into RF-Port (Pin #6) @ PLO = - 2 dBm; fLO = 1185 MHz Impedance into IF-Port (Pin #4) @ PLO = - 2 dBm; fLO = 1185 MHz Input Impedance into LO-Port (Pin #1) Reflexion Coefficient Reflexion Coefficient Reflexion Coefficient MHz Mag Ang Mag Ang Mag Ang 100 0.94 - 22 0.25 -1 0.98 -6 200 0.82 - 40 0.32 4 0.97 - 12 300 0.75 - 50 0.34 -1 0.98 - 17 400 0.69 - 63 0.35 -7 0.99 - 22 500 0.64 - 76 0.32 - 14 1.0 - 28 600 0.57 - 89 0.27 - 17 1.02 - 33 700 0.48 - 102 0.22 - 11 1.04 - 40 800 0.36 - 112 0.21 7 1.05 - 43 900 0.23 - 117 0.26 19 1.06 - 55 1000 0.13 - 105 0.32 22 1.07 - 61 1050 0.15 - 53 - - - - 1100 0.21 - 44 0.41 15 1.00 - 75 1150 0.33 - 43 - - 0.94 - 80 1200 0.42 - 52 0.45 9 0.88 - 83 1250 0.47 - 67 - - 0.80 - 86 1300 0.47 - 73 0.47 3 0.75 - 87 1350 0.48 - 80 - - 0.69 - 87 1400 0.47 - 84 0.48 -2 0.65 - 87 1450 - - - - 0.62 - 86 1500 0.44 - 91 0.49 -5 0.60 - 85 1600 0.42 - 97 0.50 -8 0.58 - 85 1700 0.40 - 103 0.50 -9 0.55 - 86 1800 0.38 - 108 0.50 - 0.53 - 87 f Data Book 595 V1.0, 2001-01-01 GaAs Components CMY 200 Typical Reflexion Coefficients of CMY 200, Z0 = 50 (cont'd) Input Impedance into RF-Port (Pin #6) @ PLO = - 2 dBm; fLO = 1185 MHz Impedance into IF-Port (Pin #4) @ PLO = - 2 dBm; fLO = 1185 MHz Input Impedance into LO-Port (Pin #1) Reflexion Coefficient Reflexion Coefficient Reflexion Coefficient MHz Mag Ang Mag Ang Mag Ang 1900 0.36 - 111 0.50 - 13 0.50 - 88 2000 0.36 - 113 0.50 - 14 0.48 - 90 f Supplementary Remarks to CMY 200 This ultralinear down-converter device is developed especially for an excellent intermodulation performance at low DC power consumption and a low demand of LO power as used e.g. for the second mixer of double conversion TV tuners. So this down-converter is optimized for a RF-frequency of 1200 MHz (1000 MHz to 1400 MHz) and an IF-frequency range of about 40 MHz to 100 MHz. This mixer MMIC device contains a mixer, a gain controlled LO buffer stage and an IF amplifier stage mounted into the very small MW-6 plastic package. All ports are unsymmetric, RFport and IFport are near 50 . The RFport is matched to 50 simply by a series inductance (the parasitic capacitance at the RF-port to ground must be kept as small as possible). The LO-port is a high impedance port with a inner DC connection (internal AGC for LO buffer), a external DC block is necessary. The LO port has a slightly negative input impedance within a frequency range of 500 MHz to 1100 MHz, no high source impedance should appear within this frequency range, if DC is blocked or LO is matched (R < 300 ). Any noise spurious onto the LO source with the frequencies f = fLO fIF should be avoided. Data Book 596 V1.0, 2001-01-01 GaAs Components CMY 200 Package Outlines MW-6 (Special Package) 1.1 max 2.9 0.1 B 0.6 +0.1 -0.05 5 4 1 2 3 +0.2 acc. to DIN 6784 10max 1.3 0.1 0.3 +0.1 -0.05 6 2.6 max 10max A 0.1 max 0.08...0.15 1.9 M 2... 30 B 0.20 M A GPW05794 0.25 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Book 597 Dimensions in mm V1.0, 2001-01-01 GaAs MMIC CMY 210 Data Sheet * * * * * Ultralinear Mixer with integrated LO-Buffer Very high Input-IP3 of typical 24 dBm Very low LO-Power demand of typ. 0 dBm Suited for Up- and Down-Conversion Wide LO-Frequency Range < 500 MHz to > 2.5 GHz * Wide LO-Level Range * Single ended Ports * RF- and IF-Port Impedance 50 * Operating Voltage Range: < 3 to 6 V * Very low Current Consumption of typical 6 mA * All Gold Metallization ESD: Electrostatic discharge sensitive device Observe handling Precautions! MW-6 Type Marking Ordering Code (tape and reel) Package1) CMY 210 M3 Q62702-M0016 MW-6 1) For detailed dimensions see Page 607. Maximum Ratings Parameter Port Symbol Limit Values min. max. Unit Supply Voltage 4 VDD 0 6 V DC-Voltage at LO Input 3 V3 -3 0.5 V DC-Voltage at RF-IF Ports1) 1, 6 V1, 6 - 0.5 + 0.5 V Power into RF-IF Ports 1, 6 PIN,RF - 17 dBm Power into LO Input 3 PIN,LO - 10 dBm Channel Temperature - TCh - 150 C Storage Temperature - Tstg - 55 150 C 1) For DC test purposes only, no DC voltages at pins 1, 6 in application. Data Book 598 V1.0, 2001-01-01 GaAs Components CMY 210 Thermal Resistance Parameter Symbol Value Unit Channel to Soldering Point (GND) RthChS 100 K/W Electrical Characteristics TA = 25 C; VDD = 3 V, see test circuit; fRF = 808 MHz; fLO = 965 MHz; PLO = 0 dBm; fIF = 157 MHz, unless otherwise specified. Parameters Symbol Limit Values min. typ. max. Unit Test Conditions Operating Current IOP - 6.0 8.0 mA - Conversion Loss LC - 5.7 7.0 dB - SSB Noise Figure FSSB - 6.0 - dB - 2 Tone 3rd Order IMD dIM3 - 54 - dBc PRF1 = - 3 dBm PRF2 = - 3 dBm fRF1 = 806 MHz; fRF2 = 810 MHz; fLO = 965 MHz 3rd Order Input Intercept Point IP3IN 20 24 - dBm - Input Power P- 1 dB - 14 - dBm - LO Leakage at RF/IF-Port (1, 6) PLO 1, 6 - -8 - dBm - Data Book 599 V1.0, 2001-01-01 GaAs Components CMY 210 L1 IN / OUT RF 50 L2 C1 OUT / IN IF 50 1 CMY 210 C3 L3 LO IN C2 6 3 4 2, 5 L4 C4 VDD Figure 1 EHT08981 Test Circuit/Application Example Notes for External Elements L1, C1: Filter for upper frequency. C2, L2: Filter for lower frequency. Each filter is a throughpath for the desired frequency (RF or IF) and isolates the other frequency (IF or RF) and its harmonics. These two filters must be connected to pin 1 and pin 6 directly. Parasitic capacitances at the ports 1 and 6 must be as small as possible. L4 and C4 are optimized by indicating lowest IOP at used LO-frequency; same procedure for L3. The ports 1, 3 and 6 must be DC open. Lumped Element Values for 800 MHz Test and Application Circuit fLO FRF FIF L1 C1 L2 C2 L3 C3 L4 C4 MHz MHz MHz nH pF nH pF nH pF nH pF 965 808 157 8.2 3.9 8.2 3.3 6.8 47 15 33 Data Book 600 V1.0, 2001-01-01 GaAs Components CMY 210 VD + 33 pF 15 nH 3.3 pF LO 33 pF VD + 6.8 nH LO CMY 210 IF 3.9 pF IF RF 8.2 nH 8.2 nH EHT08983 Actual size RF EHT08982 Figure 2 PCB-Layout for 800 MHz Test and Application Circuit Typical Lumped Element Values for Different RF-Frequencies fRF L1 C1 L2 C2 MHz nH pF nH pF 400 12 15 12 12 450 12 12 12 10 900 8.2 3.9 8.2 3.3 1500 3.3 2.7 3.3 2.2 1800 3.3 2.2 3.3 1.8 2000 3.3 1.8 3.3 1.2 2400 1.8 2.7 1.8 1.5 Typical Lumped Element Values for Different LO-Frequencies fLO L3 C3 L4 C4 MHz nH pF nH pF 500 15 82 47 82 750 6.8 33 22 33 800 6.8 33 18 33 950 6.8 27 15 27 Data Book 601 V1.0, 2001-01-01 GaAs Components CMY 210 Typical Lumped Element Values for Different LO-Frequencies (cont'd) fLO L3 C3 L4 C4 MHz nH pF nH pF 1100 6.8 27 12 27 1400 6.8 22 6.8 22 1600 6.8 18 4.7 18 1800 6.8 15 3.3 15 2000 6.8 12 2.2 12 2100 6.8 12 1.8 12 2300 4.7 12 1.2 12 General Description and Notes The CMY 210 is an all port single ended general purpose Up- and Down-Converter. It combines small conversion losses and excellent intermodulation characteristics with a low demand of LO- and DC-power. The internal level controlled LO-Buffer enables a good performance over a wide LO level range. The internal mixers principle with one port RF and IF requires a frequency separation at pin 1 and 6 respectively. Note 1 Best performance with lowest conversion loss is achieved when each circuit or device for the frequency separation meets the following requirements: Input Filter: Throughpass for the signal to be mixed; reflection of the mixed signal and the harmonics of both. Output Filter: Throughpass for the mixed signal and reflection of the signal to be mixed and the harmonics of both. The impedance for the reflecting frequency range of each filter toward the ports 1 and 6 should be as high as possible. In the simplest case a series- and a parallel- resonator circuit will meet these requirements but also others as appropriate drop in filters or micro stripline elements can be used. The two branches with filters should meet immediately at the package leads of the port 1 and 6. Parasitic capacitances at these ports must be kept as small as possible. The mixer also can be driven with a source- and a load impedance different to 50 , but performance will degrade at larger deviations. Data Book 602 V1.0, 2001-01-01 GaAs Components CMY 210 Note 2 The LO-Buffer needs an external inductor L4 at port 4; the value of inductance depends on the LO frequency. It is tuned for minimum IOP consumption into port 4. At lower LO frequencies it can be reduced by an additional capacitor C5. Note 3 The LO Input impedance at Port 3 can be matched with a series inductor. It also can be tuned for a minimum current IOP into port 4. C3 is a DC blocking capacitor. Since the input impedance of port 3 can be slightly negative at lower frequencies, the source reflection coefficient should be kept below 0.8 (Z0 = 50 ) within this frequency range. The Conversion Noise Figure FSSB is corresponding with the value of Conversion Loss LC. The LO signal must be clean of noise and spurious at the frequencies fLO fIF. Data Book 603 V1.0, 2001-01-01 GaAs Components CMY 210 Operating Current IOP = f (PLO), VDD = 3 V, fLO = Parameter IOP Conversion Loss LC = f (PLO), VDD = 3 V, fIF = 120 MHz, fLO = Parameter EHT08984 20 mA LC 2.5 GHz 2.0 GHz 1.5 GHz 1.0 GHz 0.5 GHz 16 14 8 7 12 6 10 5 8 4 6 3 4 2 2 1 0 -10 -8 -6 -4 -2 0 2 4 EHT08985 10 dB 2.5 GHz 2.0 GHz 1.5 GHz 0 -10 -8 -6 -4 -2 0 6 dBm 10 2 4 Conversion Loss LC = f (VDD), PLO = 0 dBm, fLO = 1500 MHz; fIF = 120 MHz LC Third Order IP3 IP3IN = f (PLO), PIN = 2 x - 3 dBm; fIF = 40/45 MHz, VDD = 3 V; fLO = Parameter EHT08986 10 dB 6 dBm 10 PLO PLO EHT08987 40 dBm IP3IN 8 30 7 6 25 5 4 0.5 GHz 1.5 GHz 2.0 GHz 2.5 GHz 20 3 2 15 1 0 0 1 2 3 4 5 6 7 8 10 -10 -8 -6 -4 -2 0 V 10 VDD Data Book 2 4 6 dBm 10 PLO 604 V1.0, 2001-01-01 GaAs Components CMY 210 Operating Current IOP = f (VDD), PLO = 0 dBm, fLO = 1500 MHz I OP LO-Leakage at Port 1, 6 PLO1, 6 = f (fLO), PLO = 0 dBm, VDD = 3 V EHT08988 20 mA PLO1, 6 16 -4 14 -6 12 -8 10 -10 8 -12 6 -14 4 -16 2 -18 0 EHT08989 0 dBm 0 1 2 3 4 5 6 7 8 -20 V 10 VDD Data Book 605 0 0.5 1 1.5 2 GHz 2.5 f LO V1.0, 2001-01-01 GaAs Components CMY 210 Package Parameters Dim. min. A max. Gradient Remark - 1.1 - - A1 - 0.1 - - A2 - 1.0 - - b - 0.3 - - - b1 - 0.6 - - - c 0.08 - 0.15 - - D 2.8 - 3.0 - - E 1.2 - 1.4 - - |e| - 0.95 - - - |e1| - 1.9 - - - HE - - 2.6 - - LE - - 0.6 - - a - - - max. 10 1) q - - - 2 ... 30 - 1) nom. Applicable on all case top sides. Data Book 606 V1.0, 2001-01-01 GaAs Components CMY 210 Package Outlines MW-6 (Special Package) 1.1 max 2.9 0.1 B 0.6 +0.1 -0.05 5 4 1 2 3 +0.2 acc. to DIN 6784 10max 1.3 0.1 0.3 +0.1 -0.05 6 2.6 max 10max A 0.1 max 0.08...0.15 1.9 M 2... 30 B 0.20 M A GPW05794 0.25 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Book 607 Dimensions in mm V1.0, 2001-01-01 GaAs MMIC CMY 211 Data Sheet * * * * * Linear Mixer with integrated LO-Buffer High Input-IP3 of typical 17.5 dBm Very low LO-Power demand of typ. 0 dBm Suited for Up- and Down-Conversion Wide LO-Frequency Range < 500 MHz to > 2.5 GHz * Wide LO-Level Range * Single ended Ports * RF- and IF-Port Impedance 50 * Operating Voltage Range: < 3 to 6 V * Very low Current Consumption of typical 2.5 mA * All Gold Metallization ESD: Electrostatic discharge sensitive device Observe handling Precautions! MW-6 Type Marking Ordering Code (tape and reel) Package1) CMY 211 M4s Q62702-M0017 MW-6 1) For detailed dimensions see Page 614. Maximum Ratings Parameter Port Symbol Limit Values min. max. Unit Supply Voltage 4 VDD 0 6 V DC-Voltage at LO Input 3 V3 -3 0.5 V DC-Voltage at RF-IF Ports1) 1, 6 V1, 6 - 0.5 + 0.5 V Power into RF-IF Ports 1, 6 PIN, RF - 17 dBm Power into LO Input 3 PIN, LO - 10 dBm Channel Temperature - TCh - 150 C Storage Temperature - Tstg - 55 150 C 1) For DC test purposes only, no DC voltages at pins 1, 6 in application. Data Book 608 V1.0, 2001-01-01 GaAs Components CMY 211 Thermal Resistance Parameter Symbol Value Unit Channel to Soldering Point (GND) RthChS 100 K/W Electrical Characteristics TA = 25 C; VDD = 3 V, see test circuit; fRF = 808 MHz; fLO = 965 MHz; PLO = 0 dBm; fIF = 157 MHz, unless otherwise specified Parameters Symbol Limit Values min. typ. max. Unit Test Conditions Operating Current IOP - 2.5 4.0 mA - Conversion Loss LC - 6.0 7.5 dB - SSB Noise Figure FSSB - 6.0 - dB - 2 Tone 3rd Order IMD dIM3 - 41 - dBc PRF1 = - 3 dBm PRF2 = - 3 dBm fRF1 = 806 MHz; fRF2 = 810 MHz; fLO = 965 MHz 3rd Order Input Intercept Point IP3IN 16 17.5 - dBm - LO Leakage at RF/IF-Port (1, 6) PLO 1, 6 - - 13 - dBm - Data Book 609 V1.0, 2001-01-01 GaAs Components CMY 211 IN / OUT RF 50 L2 C1 L1 OUT / IN IF 50 1 CMY 211 C3 L3 LO IN 6 C2 3 4 2, 5 L4 C4 VDD Figure 1 EHT08990 Test Circuit/Application Example Notes for External Elements L1, C1: Filter for upper frequency. C2, L2: Filter for lower frequency. Each filter is a throughpath for the desired frequency (RF or IF) and isolates the other frequency (IF or RF) and its harmonics. These two filters must be connected to pin 1 and pin 6 directly. Parasitic capacitances at the ports 1 and 6 must be as small as possible. L4 and C4 are optimized by indicating lowest IOP at used LO-frequency; same procedure for L3. The ports 1, 3 and 6 must be DC open. Element Values for 800 MHz Test and Application Circuit fLO FRF FIF L1 C1 L2 C2 L3 C3 L4 C4 MHz MHz MHz nH pF nH pF nH pF nH pF 965 808 157 8.2 3.9 8.2 3.9 6.8 47 15 33 Data Book 610 V1.0, 2001-01-01 GaAs Components CMY 211 VD + LO 33 pF 33 pF CMY 211 3.9 pF IF 8.2 nH LO CMY 211 3.9 pF VD + 6.8 nH CMY 211 15 nH IF RF 8.2 nH EHT08992 Actual size RF EHT08991 Figure 2 PCB-Layout for 800 MHz Test and Application Circuit Typical Lumped Element Values for Different RF-Frequencies fRF L1 C1 L2 C2 MHz nH pF nH pF 400 12 15 12 12 450 12 12 12 10 900 8.2 3.9 8.2 3.3 1500 3.3 2.7 3.3 2.2 1800 3.3 2.2 3.3 1.8 2000 3.3 1.8 3.3 1.2 2400 1.8 2.7 1.8 1.5 Typical Lumped Element Values for Different LO-Frequencies fLO L3 C3 L4 C4 MHz nH pF nH pF 500 15 82 47 82 750 6.8 33 22 33 800 6.8 33 18 33 950 6.8 27 15 27 Data Book 611 V1.0, 2001-01-01 GaAs Components CMY 211 Typical Lumped Element Values for Different LO-Frequencies (cont'd) fLO L3 C3 L4 C4 MHz nH pF nH pF 1100 6.8 27 12 27 1400 6.8 22 6.8 22 1600 6.8 18 4.7 18 1800 6.8 15 3.3 15 2000 6.8 12 2.2 12 2100 6.8 12 1.8 12 2300 4.7 12 1.2 12 General Description and Notes The CMY 211 is an all port single ended general purpose Up- and Down-Converter. It combines small conversion losses and excellent intermodulation characteristics with a low demand of LO- and DC-power. The internal level controlled LO-Buffer enables a good performance over a wide LO level range. The internal mixers principle with one port RF and IF requires a frequency separation at pin 1 and 6 respectively. Note 1 Best performance with lowest conversion loss is achieved when each circuit or device for the frequency separation meets the following requirements: Input Filter: Throughpass for the signal to be mixed; reflection of the mixed signal and the harmonics of both. Output Filter: Throughpass for the mixed signal and reflection of the signal to be mixed and the harmonics of both. The impedance for the reflecting frequency range of each filter toward the ports 1 and 6 should be as high as possible. In the simplest case a series- and a parallel- resonator circuit will meet these requirements but also others as appropriate drop in filters or micro stripline elements can be used. The two branches with filters should meet immediately at the package leads of the port 1 and 6. Parasitic capacitances at these ports must be kept as small as possible. The mixer also can be driven with a source- and a load impedance different to 50 , but performance will degrade at larger deviations. Data Book 612 V1.0, 2001-01-01 GaAs Components CMY 211 Note 2 The LO-Buffer needs an external inductor L4 at port 4; the value of inductance depends on the LO frequency. It is tuned for minimum IOP consumption into port 4. Note 3 The LO Input impedance at Port 3 can be matched with a series inductor. It also can be tuned for a minimum current IOP into port 4. C3 is a DC blocking capacitor. Since the input impedance of port 3 can be slightly negative at lower frequencies, the source reflection coefficient should be kept below 0.8 (Z0 = 50 ) within this frequency range. The Conversion Noise Figure FSSB is corresponding with the value of Conversion Loss LC. The LO signal must be clean of noise and spurious at the frequencies fLO fIF. Package Parameters Dim. min. nom. max. Gradient Remark A - - 1.1 - - A1 - - 0.1 - - A2 - - 1.0 - - b - 0.3 - - - b1 - 0.6 - - - c 0.08 - 0.15 - - D 2.8 - 3.0 - - E 1.2 - 1.4 - - |e| - 0.95 - - - |e1| - 1.9 - - - HE - - 2.6 - - LE - - 0.6 - - a - - - max 10 1) q - - - 2 ... 30 - 1) Applicable on all case top sides. Data Book 613 V1.0, 2001-01-01 GaAs Components CMY 211 Package Outlines MW-6 (Special Package) 1.1 max 2.9 0.1 B 0.6 +0.1 -0.05 5 4 1 2 3 +0.2 acc. to DIN 6784 10max 1.3 0.1 0.3 +0.1 -0.05 6 2.6 max 10max A 0.1 max 0.08...0.15 1.9 M 2... 30 B 0.20 M A GPW05794 0.25 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Book 614 Dimensions in mm V1.0, 2001-01-01 GaAs MMIC CMY 212 Data Sheet * Ultralinear mixer with integrated IF-amplifier and LO-Buffer for CDMA receiver applications * Typical overall performance at cellular frequencies for PLO = - 4 dBm (operation conditions: 3 V, 11 mA; fRF = 881 MHz; fLO = 966 MHz): Gain 10 dB, Input IP3 9 dBm, Noise figure 8 dB * RF-frequency range 0.5 - 2.5 GHz * Operating voltage range: 2.6 to 5 V * Small SCT-598-8-1 plastic package ESD: Electrostatic discharge sensitive device, observe handling precautions! 8 7 6 5 2 1 3 4 VPW05982 Type Marking Ordering Code (tape and reel) Package CMY 212 M5s Q62702-M0026 SCT-598-8-1 Maximum Ratings Parameter Port Symbol Limit Values min. max. Unit Supply Voltage 3, 6 VDD 0 5 V DC-Voltage at LO Input 4 V6 -3 0.5 V DC-Voltage at Mixer RF-IF Port 1 V8 - 0.5 + 0.5 V Power into Mixer RF Port 1 PRF - 10 dBm Power into LO Input 4 PIN, LO - 10 10 dBm Channel Temperature - TCh - 150 C Operating Temperature - TOP - 30 85 C Storage Temperature - Tstg - 55 150 C Data Book 615 V1.0, 2001-01-01 GaAs Components CMY 212 Thermal Resistance Parameter Symbol Values Unit Channel to Soldering Point (GND) RthChS 260 K/W CMY 212 Mixer 1 RF IN / IF OUT GND 8 IF AMP IN 2 7 Mixer 3 GND VDD 6 IF AMP OUT Mixer 4 LO IN 5 IF AMP Source EHT08993 Figure 1 Block Diagram Electrical Characteristics - Mixer Parameter Comment Limit Values min. typ. max. Unit RF - Frequency range External match 0.5 - 2.5 GHz LO - Frequency range External match 0.5 - 2.5 GHz IF Frequency range External match 45 - 250 MHz Data Book 616 V1.0, 2001-01-01 GaAs Components CMY 212 Typical Performance at Cellular Frequencies* TA = 25 C; VDD = 3 V, fRF = 881 MHz; fLO = 966 MHz; PLO = - 4 dBm; fIF = 85 MHz; ZS = ZL = 50 ; unless otherwise specified Parameter Symbol Limit Values min. typ. max. Unit Total operating Current (Mixer + IF amplifier) IOP - 11 - mA Conversion Gain GC - 10 - dB SSB Noise Figure FSSB - 8 - dB RF Input -/ IF output return loss (external matching required) RFIrl/IFOrl - 10 - dB 3rd Order Input Intercept Point IIP3 - 10 - dBm *Important Note: During production, the RF performance at PCS frequencies is screened. The passed devices also achieve the specified RF performance at cellular frequencies. Test Conditions at PCS Frequencies TA = 25 C; VDD = 3 V, fRF = 1960 MHz; fLO = 1750 MHz; PLO = - 4 dBm; fIF = 210 MHz; ZS = ZL = 50 ; unless otherwise specified Parameter Symbol Limit Values min. typ. max. Unit Total operating Current (Mixer + IF amplifier) IOP - 12 14 mA Conversion Gain GC 8.5 9.5 - dB SSB Noise Figure FSSB - 8.5 - dB RF Input -/ IF output return loss (external matching required) RFIrl/IFOrl - 10 - dB 3rd Order Input Intercept Point IIP3 10 11.5 - dBm Data Book 617 V1.0, 2001-01-01 GaAs Components CMY 212 Typical Device Behavior at Cellular Frequencies TA = 25 C; VDD = 3 V, fRF = 881 MHz; fLO = 966 MHz; fIF = 85 MHz; ZS = ZL = 50 ; unless otherwise specified Typical Device Behavior at PCS Frequencies TA = 25 C; VDD = 3 V, fRF = 1960 MHz; fLO = 1750 MHz; fIF = 210 MHz; ZS = ZL = 50 ; unless otherwise specified EHT09225 26 mA 24 14 dB, dBm 14 dB, dBm IIP3 I 22 OP Gain 18 10 16 IIP3 12 20 I OP 18 Gain 10 16 14 14 8 8 12 12 10 10 6 6 8 -12 Data Book Gain, IIP3 20 Operating Current 22 12 Gain, IIP3 Operating Current EHT09226 26 mA 24 -10 -8 -6 LO Power -4 8 -12 dBm 0 618 -10 -8 -6 LO Power -4 dBm 0 V1.0, 2001-01-01 GaAs Components CMY 212 C Ext2 C Ext1 RF Input L Ext1 L Ext2 RF Input 1 8 IF Input Mixer C Ext5 C Ext6 IF Buffer 2 +3 V +3 V 7 L Ext3 L Ext5 GND C Ext4 LO Input L Ext4 VD 6 IF Output 3 LO Input 4 5 IF Output C Ext5 VS Cap C Ext7 GND Figure 2 C Ext3 EHT09227 Test Circuit External Components for Cellular Frequencies fRF = 875 MHz; fLO = 960 MHz; fIF = 85 MHz Capacitors (Murata 0402) Inductors (Toko) Cext1 2 pF Lext1 18 nH LL1005 Cext2 1 nF Lext2 270 nH LL1608 Cext3 20 pF Lext3 220 nH LL1608 Cext4 100 pF Lext4 12 nH LL1005 Cext5 1 nF Lext5 15 nH LL1005 Cext6 1 nF - - Cext7 3.3 pF - - Cext8 100 nF Lext8 22 nH LL1005 Data Book 619 V1.0, 2001-01-01 GaAs Components CMY 212 External Components for PCS Frequencies fRF = 1960 MHz; fLO = 1750 MHz; fIF = 210 MHz Capacitors (Murata 0402) Inductors (Toko) Cext1 1 pF Lext1 5.6 nH LL1005 Cext2 1 nF Lext2 68 nH LL1608 Cext3 8 pF Lext3 68 nH LL1608 Cext4 22 pF Lext4 4.7 nH LL1005 Cext5 1 nF Lext5 4.7 nH LL1005 Cext6 1 nF - - Cext7 3 pF - - Cext8 100 nF - - Data Book 620 V1.0, 2001-01-01 GaAs Components CMY 212 GND Vd_MIX N.C.Vd_BUF GND J2 C10 C9 RF IF L2 C6 X3 X1 C2 L3 C1 L1 IC1 C3 C5 L5 L4 C8 C4 C7 CMY 212 / 213 LO X2 L2 C2 L3 L1 IF Output C1 RF Input C6 IC1 C5 L5 C3 L4 C8 C4 C7 LO Input EHT09228 Figure 3 PCB Layout Size 35 x 35 mm2 Data Book 621 V1.0, 2001-01-01 GaAs Components CMY 212 General Description and Notes for CMY 212 CMY 212 is a general purpose down-converter device designed for multiple applications such as cellular and PCS mobile phones, ISM bands, GPS receivers, L-band satellite terminals, WLAN and pagers. Due to its excellent intermodulation characteristics and its high conversion gain, CMY 212 is particularly suited for CDMA receiver applications. The device combines an ultra-linear mixer with LO - driver and a single stage IF-amplifier in a very small SCT-598-8-1 package. The mixer section of CMY 212 combines low conversion losses and excellent intermodulation characteristics with low requirements of LO- and DC-power. The internal level controlled LO-Buffer enables a good performance over a wide LO level range. The input and output matching of the IF amplifier can be adapted externally within a frequency range from 45 to 250 MHz. Data Book 622 V1.0, 2001-01-01 GaAs Components CMY 212 Package Outlines SCT-598-8-1 (Special Package) 2.9 + 0.2 0.75 0.6 1 2 3 4 +0.2 n. DIN 6784 +0.1 0.2 -0.05 0.1 max. 0.5 +0.1 -0.05 2.1 M 0.20 M A B GPW05982 0.25 1.6 + 0.1 7 6 5 10 max. 8 0.15 +0.1 -0.05 10 max . A 1.1 max. 2.6 max. 0.25 min. B Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Book 623 Dimensions in mm V1.0, 2001-01-01 GaAs MMIC CMY 213 Data Sheet * * * * * Ultralinear mixer with integrated IF-amplifier and LO-Buffer for CDMA receiver applications Typical overall performance at cellular frequencies for PLO = - 5 dBm (operation conditions: 3 V, 8 mA; fRF = 850 MHz; fLO = 740 MHz): Gain 9.5 dB, Input IP3 10 dBm, Noise figure 8 dB RF-frequency range 0.5 - 2.5 GHz Operating voltage range: 2.6 to 5 V Small SCT-598-8-1 plastic package 8 7 6 5 2 1 3 4 VPW05982 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (tape and reel) Package CMY 213 M6s Q62702-M0032 SCT-598-8-1 Maximum Ratings Parameter Port Symbol Limit Values min. max. Unit Supply Voltage 3, 6 VDD 0 5 V DC-Voltage at LO Input 4 V6 -3 0.5 V DC-Voltage at Mixer RF-IF Port 1 V8 - 0.5 + 0.5 V Power into Mixer RF Port 1 PRF - 10 dBm Power into LO Input 4 PIN, LO - 10 10 dBm Channel Temperature - TCh - 150 C Operating Temperature - TOP - 30 85 C Storage Temperature - Tstg - 55 150 C Data Book 624 V1.0, 2001-01-01 GaAs Components CMY 213 Thermal Resistance Parameter Symbol Values Unit Channel to Soldering Point (GND) RthChS 260 K/W CMY 213 Mixer 1 RF IN IF OUT GND 8 IF AMP IN 2 7 Mixer 3 GND VDD 6 IF AMP OUT Mixer 4 LO IN 5 IF AMP Source EHT09240 Figure 1 Block Diagram Electrical Characteristics - Mixer Parameter Comment Limit Values min. typ. max. Unit RF - Frequency range External match 0.5 - 2.5 GHz LO - Frequency range External match 0.5 - 2.5 GHz IF Frequency range External match 45 - 250 MHz Data Book 625 V1.0, 2001-01-01 GaAs Components CMY 213 Typical Performance at Cellular Frequencies* TA = 25 C; VDD = 3 V, fRF = 850 MHz; fLO = 740 MHz; PLO = - 5 dBm; fIF = 110 MHz; ZS = ZL = 50 ; unless otherwise specified Parameter Symbol Limit Values min. typ. max. Unit Total operating Current (Mixer + IF amplifier) IOP - 8.0 9.5 mA Conversion Gain GC 8.0 9.5 - dB SSB Noise Figure FSSB - 8 - dB RF Input -/ IF Output return loss (external matching required) RFIrl/IFOrl - 10 - dB 3rd Order Input Intercept Point IIP3 8 10 - dBm LO-RF Isolation Iso - 10 - dB *Important Note: During production, the RF performance at PCS frequencies is screened. The passed devices also achieve the specified RF performance at cellular frequencies. Test Conditions at PCS Frequencies TA = 25 C; VDD = 3 V, fRF = 1960 MHz; fLO = 1750 MHz; PLO = - 5 dBm; fIF = 210 MHz; ZS = ZL = 50 ; unless otherwise specified Parameter Symbol Limit Values min. typ. max. Unit Total operating Current (Mixer + IF amplifier) IOP - 8.0 9.5 mA Conversion Gain GC 7 8.5 - dB SSB Noise Figure FSSB - 8.5 - dB RF Input -/ IF Output return loss (external matching required) RFIrl/IFOrl - 10 - dB 3rd Order Input Intercept Point IIP3 10 12 - dBm LO-RF Isolation Iso - 6 - dB Data Book 626 V1.0, 2001-01-01 GaAs Components CMY 213 EHT09241 20 mA 18 Typical Device Behavior at PCS Frequencies TA = 25 C; VDD = 3 V, fRF = 1960 MHz; fLO = 1750 MHz; fIF = 210 MHz; ZS = ZL = 50 ; unless otherwise specified EHT09242 20 mA 15 dB, dBm 14 18 IIP3 12 Gain 11 14 Operating Current 16 Gain, IIP3 Operating Current 13 10 12 13 16 14 12 I OP 11 12 Gain IIP3 I OP 6 -12 Data Book 10 8 8 6 -6 -8 LO Power -4 8 8 7 -10 10 9 9 10 15 dB, dBm 14 Gain, IIP3 Typical Device Behavior at Cellular Frequencies TA = 25 C; VDD = 3 V, fRF = 850 MHz; fLO = 740 MHz; fIF = 110 MHz; ZS = ZL = 50 ; unless otherwise specified 6 -12 dBm 0 627 7 6 -10 -6 -8 LO Power -4 dBm 0 V1.0, 2001-01-01 GaAs Components CMY 213 C Ext2 C Ext1 RF Input L Ext1 L Ext2 RF Input 1 8 IF Input Mixer C Ext5 C Ext6 IF Buffer 2 +3 V +3 V 7 L Ext3 L Ext5 GND C Ext4 LO Input L Ext4 VD 6 IF Output 3 LO Input 4 5 Data Book IF Output C Ext5 VS Cap C Ext7 GND Figure 2 C Ext3 EHT09227 Test Circuit 628 V1.0, 2001-01-01 GaAs Components CMY 213 External Components for Cellular Frequencies fRF = 850 MHz; fLO = 740 MHz; fIF = 110 MHz Capacitors (Murata 0402) Inductors (Toko) Cext1 1.5 pF Lext1 27 nH LL1005 Cext2 1 nF Lext2 180 nH LL1608 Cext3 18 pF Lext3 150 nH LL1608 Cext4 100 pF Lext4 27 nH LL1005 Cext5 1 nF Lext5 27 nH LL1005 Cext6 1 nF - - Cext7 3 pF - - Cext8 100 nF - - External Components for PCS Frequencies fRF = 1960 MHz; fLO = 1750 MHz; fIF = 210 MHz Capacitors (Murata 0402) Inductors (Toko) Cext1 1 pF Lext1 5.6 nH LL1005 Cext2 1 nF Lext2 68 nH LL1608 Cext3 8 pF Lext3 68 nH LL1608 Cext4 22 pF Lext4 4.7 nH LL1005 Cext5 1 nF Lext5 4.7 nH LL1005 Cext6 1 nF - - Cext7 3 pF - - Cext8 100 nF - - Data Book 629 V1.0, 2001-01-01 GaAs Components CMY 213 GND Vd_MIX N.C.Vd_BUF GND J2 C10 C9 RF IF L2 C6 X3 X1 C2 L3 C1 L1 IC1 C3 C5 L5 L4 C8 C4 C7 CMY 212 / 213 LO X2 L2 C2 L3 L1 IF Output C1 RF Input C6 IC1 C5 L5 C3 L4 C8 C4 C7 LO Input EHT09228 Figure 3 PCB Layout Size 35 x 35 mm2 Data Book 630 V1.0, 2001-01-01 GaAs Components CMY 213 General Description and Notes for CMY 213 CMY 213 is a general purpose down-converter device designed for multiple applications such as cellular and PCS mobile phones, ISM bands, GPS receivers, L-band satellite terminals, WLAN and pagers. Due to its excellent intermodulation characteristics and its high conversion gain, CMY 213 is particularly suited for CDMA receiver applications. The device combines an ultra-linear mixer with LO - driver and a single stage IF-amplifier in a very small SCT-598-8-1 package. The mixer section of CMY 213 combines low conversion losses and excellent intermodulation characteristics with low requirements of LO- and DC-power. The internal level controlled LO-Buffer enables a good performance over a wide LO level range. The input and output matching of the IF amplifier can be adapted externally within a frequency range from 45 to 250 MHz. Data Book 631 V1.0, 2001-01-01 GaAs Components CMY 213 Package Outlines SCT-598-8-1 (Special Package) 2.9 + 0.2 0.75 0.6 1 2 3 4 +0.2 n. DIN 6784 +0.1 0.2 -0.05 0.1 max. 0.5 +0.1 -0.05 2.1 M 0.20 M A B GPW05982 0.25 1.6 + 0.1 7 6 5 10 max. 8 0.15 +0.1 -0.05 10 max . A 1.1 max. 2.6 max. 0.25 min. B Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Book 632 Dimensions in mm V1.0, 2001-01-01 GaAs MMIC CSH 210 Target Data Sheet * * * * * * TX/RX- and diversity switch for mobile communications GaAs PHEMT technology Low insertion loss No supply voltage needed Positive operating voltage P-SOT363-6-1 package (2 mm x 2 mm) SOT 363 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (tape and reel) Package CSH 210 on request on request P-SOT363-6-1 Maximum Ratings Parameter Symbol Value min. max. Unit Control voltage range VCON -5 5 V RF Input Power PIN - 4 W Thermal resistance Rth - t.b.d. K/W Junction temperature Tj - 125 C Storage temperature Tstg - 55 150 C Data Book 633 V1.0, 2001-01-01 GaAs Components CSH 210 Electrical Characteristics (TA = 25 C; VCntrl = 3.0 V; PIN = 0 dBm) Parameter Symbol Limit Values min. Insertion Loss RF1 - RFC 800 MHz - 1.0 GHz 1.0 GHz - 2.0 GHz ILRF1 Insertion Loss RFC - RF2 800 MHz - 1.0 GHz 1.0 GHz - 2.0 GHz ILRF2 Isolation RF1 - RF2 500 MHz - 2.0 GHz ISOL Return Loss1) (all ports) 800 MHz - 1.0 GHz 1.0 GHz - 2.0 GHz RL1/2/3 Harmonics 800 MHz - 1.0 GHz 1.0 GHz - 2.0 GHz PHarm Gate leakage typ. Unit max. dB - - 0.3 0.5 0.4 0.6 dB - - 0.3 0.5 0.4 0.6 dB 20 - - dB 25 20 - - - - dBc - - - - t.b.d. t.b.d. IL - 0.1 - mA TRise,TFall (10% RF to 90% RF) - - 10 - ns TON,TOFF (50% CNTRL - 90%/10% RF) - - 20 - ns Output power for 1 dB compression P1 - 22 - dBm Intermodulation intercept point IP3 - 45 - dBm 1) Return loss defined for Insertion Loss state only. Data Book 634 V1.0, 2001-01-01 GaAs Components CSH 210 1 6 2 5 3 4 EHT09254 Figure 1 Functional Block Diagram Pin Configuration Standard Control Logic Pin No. Symbol Description 1 RF Output 1 RF Output 2 GND Circuit common and DC return 3 RF Output 2 RF Output 4 V_Control 1 RF Output 2 control 5 RF Common Common RF port 6 V_Control 2 RF Output 1 control V1 V2 Through Path 3V 0V IN_OUT1 0V 3V IN_OUT2 Data Book 635 V1.0, 2001-01-01 GaAs Components CSH 210 Pin Configuration Optional Control Logic Pin No. Symbol Description 1 RF Output 1 RF Output 2 GND Circuit common and DC return 3 RF Output 2 RF Output 4 V_Control 1 RF Output 2 control 5 RF Common Common RF port 6 V_Control 2 RF Output 1 control V1 V2 Through Path 0V 3V IN_OUT1 3V 0V IN_OUT2 Data Book 636 V1.0, 2001-01-01 GaAs Components CSH 210 Package Outlines P-SOT363-6-1 (Small Outline Transistor) 2 0.2 0.2 0.9 0.1 B +0.1 0.1 max 4 1 2 3 +0.2 acc. to DIN 6784 2.10.1 5 1.25 0.1 A 6 0.15 +0.1 -0.05 0.65 0.05 0.20 M B 0.20 M A GPS05604 1.3 0.1 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Book 637 Dimensions in mm V1.0, 2001-01-01 GaAs MMIC CSH 210P Target Data Sheet * * * * * * * TX/RX- and diversity switch for mobile communications GaAs PHEMT technology Low insertion loss High IP3 No supply voltage needed Positive operating voltage range: 2.7 to 5 V P-SOT363-6-1 package (2 mm x 2 mm) SOT 363 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (tape and reel) Package CSH 210P on request on request P-SOT363-6-1 Maximum Ratings Parameter Symbol Value min. max. Unit Control voltage range VCON -5 5 V RF Input Power PIN - 6 W Thermal resistance Rth - t.b.d. K/W Junction temperature Tj - 125 C Storage temperature Tstg - 55 150 C Data Book 638 V1.0, 2001-01-01 GaAs Components CSH 210P Electrical Characteristics (TA = 25 C; VCntrl = 3.0 V; PIN = 0 dBm) Parameter Symbol Limit Values min. Insertion Loss RFC - RF1 800 MHz - 1.0 GHz 1.0 GHz - 2.0 GHz ILRF1 Insertion Loss RFC - RF2 800 MHz - 1.0 GHz 1.0 GHz - 2.0 GHz ILRF2 Isolation RF1 - RF2 800 MHz - 1.0 GHz 1.0 GHz - 2.0 GHz ISOL Return Loss1) (all ports) 800 MHz - 1.0 GHz 1.0 GHz - 2.0 GHz RL1/2/3 Harmonics 800 MHz - 1.0 GHz 1.0 GHz - 2.0 GHz typ. Unit max. dB - - 0.4 0.6 0.5 0.7 dB - - 0.4 0.6 0.5 0.7 dB - - 20 15 - - dB 18 18 - - - - PHarm - 61 - - dBc Gate leakage 800 MHz - 1.0 GHz 1.0 GHz - 2.0 GHz IL - - 0.1 mA TRise/TFall (10% RF to 90% RF) 800 MHz - 1.0 GHz 1.0 GHz - 2.0 GHz - - - 10 ns TON/TOFF (50% CNTRL - 90%/10% RF) 800 MHz - 1.0 GHz 1.0 GHz - 2.0 GHz - - - 20 ns Output power for 1 dB compression P1 - 34 - dBm Intermodulation intercept point IP3 - 51 - dBm 1) Return loss defined for Insertion Loss state only. Data Book 639 V1.0, 2001-01-01 GaAs Components CSH 210P Electrical Characteristics (TA = 25 C; VCntrl = 4.5 V; PIN = 0 dBm) Parameter Symbol Limit Values min. Insertion Loss RFC - RF1 800 MHz - 1.0 GHz 1.0 GHz - 2.0 GHz ILRF1 Insertion Loss RFC - RF2 800 MHz - 1.0 GHz 1.0 GHz - 2.0 GHz ILRF2 Isolation RF1 - RF2 800 MHz - 1.0 GHz 1.0 GHz - 2.0 GHz ISOL Return Loss1) (all ports) 800 MHz - 1.0 GHz 1.0 GHz - 2.0 GHz RL1/2/3 Harmonics 800 MHz - 1.0 GHz 1.0 GHz - 2.0 GHz typ. Unit max. dB - - 0.4 0.6 0.5 0.7 dB - - 0.4 0.6 0.5 0.7 dB - - 20 15 - - dB 18 18 - - - - PHarm - 56 - - dBc Gate leakage IL - 0.1 - mA TRise,TFall (10% RF to 90% RF) - - 10 - ns TON,TOFF (50% CNTRL - 90%/10% RF) - - 20 - ns Output power for 1 dB compression P1 - 38 - dBm Intermodulation intercept point IP3 - 55 - dBm 1) Return loss defined for Insertion Loss state only Data Book 640 V1.0, 2001-01-01 GaAs Components CSH 210P 1 6 2 5 3 4 EHT09254 Figure 1 Functional Block Diagram Pin Definitions and Functions Pin No. Symbol Description 1 RF Output 1 RF Output controlled by V_Control B 2 GND Circuit common and DC return 3 RF Output 2 RF Output controlled by V_Control A 4 V_Control A RF Output 2 control 5 RF Common Common RF port 6 V_Control B RF Output 1 control Switch Logic V1 V2 Through Path 3V 0V IN_OUT1 0V 3V IN_OUT2 Data Book 641 V1.0, 2001-01-01 GaAs Components CSH 210P Package Outlines P-SOT363-6-1 (Small Outline Transistor) 2 0.2 0.2 0.9 0.1 B +0.1 0.1 max 4 1 2 3 +0.2 acc. to DIN 6784 2.10.1 5 1.25 0.1 A 6 0.15 +0.1 -0.05 0.65 0.05 0.20 M B 0.20 M A GPS05604 1.3 0.1 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Book 642 Dimensions in mm V1.0, 2001-01-01 GaAs MMIC CSH 410 Target Data Sheet * * * * * * * SP4T for GSM Mobile Phones GaAs PHEMT technology Low insertion loss High IP3 No supply voltage needed Positive operating voltage: 2.7 to 5 V Leadless 16 pin package ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (tape and reel) Package CSH 410 on request on request P-VQFN-16-2 Maximum Ratings Parameter Symbol Value min. max. Unit Control voltage range VCON -5 + 5.5 V RF Input Power PIN - 6 W Thermal resistance Rth - t.b.d. K/W Junction temperature Tj - 125 C Storage temperature Tstg - 55 150 C Data Book 643 V1.0, 2001-01-01 GaAs Components CSH 410 Electrical Characteristics (TA = 25 C; VCntrl = 4.5 V; PIN = 0 dBm; unless otherwise noted) Parameter Symbol Limit Values min. Insertion Loss TX1-ANT PIN = + 34 dBm @ 1.0 GHz @ 2.0 GHz ILTX1 Insertion Loss TX1-ANT, RX1-ANT, RX2-ANT @ 1.0 GHz @ 2.0 GHz ILxxx Isolation TX1-ANT PIN = + 34 dBm @ 1.0 GHz @ 2.0 GHz ISOL Isolation TX1-ANT, RX1-ANT, RX2-ANT @ 1.0 GHz @ 2.0 GHz ISOL Return Loss1) TX1-ANT PIN = + 34 dBm @ 1.0 GHz @ 2.0 GHz RLTX1 Return Loss1) TX1-ANT, RX1-ANT, RX2-ANT @ 1.0 GHz @ 2.0 GHz RLxxx Harmonics TX1-ANT PIN = + 34 dBm TX2-ANT PIN = + 32 dBm @ 1.0 GHz @ 2.0 GHz PHarm Gate leakage typ. Unit max. dB - - 0.6 0.8 0.8 1.0 dB - - 0.6 0.8 0.8 1.0 dB 25 21 - - - - dB 25 21 - - - - dB 20 18 - - - - dB 20 18 - - - - dBc 65 65 - - - - IL - 0.1 - mA TRise,TFall (10% RF to 90% RF) - - 10 - ns TON,TOFF (50% CNTRL - 90%/10% RF) - - 20 - ns Data Book 644 V1.0, 2001-01-01 GaAs Components CSH 410 Electrical Characteristics (cont'd) (TA = 25 C; VCntrl = 4.5 V; PIN = 0 dBm; unless otherwise noted) Parameter Symbol Limit Values min. Input power for 1 dB compression @ 1.0 GHz @ 2.0 GHz P1 Intermodulation intercept point IP3 1) typ. Unit max. dBm - - 38 - - - - 55 - dBm Return Loss specified for Insertion Loss state only. Control Voltage Levels Logic Level Control Ports min. (VDC) nom. (VDC) max. (VDC) 0 V1, V2, V3, V4 - 0.25 0 + 0.25 1 V1, V2 + 4.5 + 4.7 + 5.5 1 V3, V4 + 2.5 + 2.7 + 3.0 Control Voltage Logic Switch Position V1 V2 V3 V4 Tx1 Ant 1 0 0 0 Tx2 Ant 0 1 0 0 Rx1 Ant 0 0 1 0 Rx2 Ant 0 0 0 1 Data Book 645 V1.0, 2001-01-01 GaAs Components CSH 410 Rx1 Rx2 12 V3 9 V4 13 8 16 5 Ant V2 V1 1 4 EHT09258 Tx1 Figure 1 Tx2 EHT09257 Functional Block Diagram Pin Definitions and Functions Pin No. Function Pin No. Function 1 V1 9 Rx1 2 Tx1 10 GND 3 GND 11 GND 4 Tx2 12 Rx2 5 GND 13 GND 6 V2 14 V4 7 V3 15 GND 8 GND 16 Ant Data Book 646 V1.0, 2001-01-01 GaAs MMIC CSH 510 Target Data Sheet * * * * * * * SP5T for GSM Mobile Phones GaAs PHEMT technology Low insertion loss High IP3 No supply voltage needed Positive operating voltage: 2.7 to 5 V Leadless 16 pin package ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (tape and reel) Package CSH 510 on request on request P-VQFN-16-2 Maximum Ratings Parameter Symbol Value min. max. Unit Control voltage range VCON -5 + 5.5 V RF Input Power PIN - 6 W Thermal resistance Rth - t.b.d. K/W Junction temperature Tj - 125 C Storage temperature Tstg - 55 150 C Data Book 647 V1.0, 2001-01-01 GaAs Components CSH 510 Electrical Characteristics (TA = 25 C; VCntrl = 4.5 V; PIN = 0 dBm; unless otherwise noted) Parameter Symbol Limit Values min. Insertion Loss TX1-ANT PIN = + 34 dBm @ 1.0 GHz @ 2.0 GHz ILTX1 Insertion Loss TX2-ANT, RX1-ANT, RX2-ANT, RX3-ANT @ 1.0 GHz @ 2.0 GHz ILxxx Isolation TX1-ANT PIN = + 34 dBm @ 1.0 GHz @ 2.0 GHz ISOL Isolation TX1-ANT, RX1-ANT, RX2-ANT @ 1.0 GHz @ 2.0 GHz ISOL Return Loss1) TX1-ANT PIN = + 34 dBm @ 1.0 GHz @ 2.0 GHz RLTX1 Return Loss1) TX2-ANT, RX1-ANT, RX2-ANT, RX3-ANT @ 1.0 GHz @ 2.0 GHz RLxxx Harmonics TX1-ANT PIN = + 34 dBm TX2-ANT PIN = + 32 dBm @ 1.0 GHz @ 2.0 GHz PHarm Gate leakage typ. Unit max. dB - - 0.7 0.9 0.9 1.1 dB - - 0.7 0.9 0.9 1.1 dB 25 21 - - - - dB 25 21 - - - - dB 20 18 - - - - dB 20 18 - - - - dBc 65 65 - - - - IL - 0.1 - mA TRise,TFall (10% RF to 90% RF) - - 10 - ns TON,TOFF (50% CNTRL - 90%/10% RF) - - 20 - ns Data Book 648 V1.0, 2001-01-01 GaAs Components CSH 510 Electrical Characteristics (cont'd) (TA = 25 C; VCntrl = 4.5 V; PIN = 0 dBm; unless otherwise noted) Parameter Symbol Limit Values min. Input power for 1 dB compression @ 1.0 GHz @ 2.0 GHz P1dB Intermodulation intercept point IP3 1) typ. Unit max. dBm - - 38 - - - - 55 - dBm Return Loss specified for Insertion Loss state only Control Voltage Levels Logic Level Control Ports min. (VDC) nom. (VDC) max. (VDC) 0 V1, V2, V3, V4, V5 - 0.25 0 + 0.25 1 V1 , V2 + 4.5 + 4.7 + 5.5 1 V3 , V4 , V5 + 2.5 + 2.7 + 3.0 Truth Table Switch Position Control V1 Control V2 Control V3 Control V4 Control V5 Tx1 Ant 1 0 0 0 0 Tx2 Ant 0 1 0 0 0 Rx1 Ant 0 0 1 0 0 Rx2 Ant 0 0 0 1 0 Rx3 Ant 0 0 0 0 1 Data Book 649 V1.0, 2001-01-01 GaAs Components CSH 510 V1 V3 Tx1 Rx1 Ant Rx2 Tx2 V4 Rx3 All capacitors 27 pF Figure 1 Data Book V2 V5 EHT09261 Functional Block Diagram 650 V1.0, 2001-01-01 GaAs Components CSH 510 Pin Assignment 1 12 9 13 8 16 5 1 4 EHT09258 Figure 2 Pin Definitions and Functions Pin No. Function Pin No. Function 1 V1 9 Rx2 2 Tx1 10 GND 3 V2 11 GND 4 Tx2 12 Rx3 5 GND 13 V5 6 V3 14 GND 7 Rx1 15 Ant 8 V4 16 GND Data Book 651 V1.0, 2001-01-01 GaAs Components CSH 510 Pin Assignment 2 12 9 13 8 16 5 1 4 EHT09258 Figure 3 Pin Definitions and Functions Pin No. Function Pin No. Function 1 GND 9 Rx2 2 Tx1 10 GND 3 GND 11 Rx3 4 Tx2 12 V5 5 GND 13 V4 6 Ant 14 V3 7 GND 15 V2 8 Rx1 16 V1 Data Book 652 V1.0, 2001-01-01 GaAs MMIC CSY 210 Preliminary Data Sheet * * * * * * TX/RX- and diversity switch for mobile communications High input power capability (36 dBm P- 1 dB @ 3 V operation, 900 MHz) High linearity (57 dBm IP3 @ 900 MHz) Low insertion loss (0.6 dB @ 900 MHz) Positive control- and supply voltages (3 V) Miniature package SCT-598 SCT-598 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (taped) Package1) CSY 210 on request on request SCT-598 1) Dimensions see Page 661. Maximum Ratings Parameter Symbol Value Unit Control voltage range VA / VB t.b.d. V Channel temperature TCh 150 C Storage temperature range Tstg - 55 ... + 150 C Total power dissipation (TS t.b.d. C)1) Ptot t.b.d. mW Input Power PIN t.b.d. mW 1) Please care for sufficient heat dissipation on the pcb! Data Book 653 V1.0, 2001-01-01 GaAs Components CSY 210 B A 3 6 CSY 210 RF1 1 4 RF2 RFC 8 5 VCC 2, 7 GND Figure 1 Data Book EHT09014 Functional Block Diagram 654 V1.0, 2001-01-01 GaAs Components CSY 210 Electrical Characteristics (TA = 25 C; PIN = 10 dBm, unless otherwise stated) Parameter Symbol Limit Values min. Insertion Loss RF1 - RFC f = 0.9 GHz f = 1.8 GHz ILRF1 Insertion Loss RF2 - RFC f = 0.9 GHz f = 1.8 GHz ILRF2 Isolation RF1 - RF2 f = 0.9 GHz f = 1.8 GHz ISO Input power at 1 dB gain compression (RF1 - RFC) Pulsed: TON = 577 s, 12.5% duty cycle - - typ. 0.6 0.9 - - 0.6 0.9 Unit Test Conditions dB VA = 0 V, VB = 3 V, VCC = 3 V dB VA = 3 V, VB = 0 V, VCC = 3 V dB VA = 0 V, VB = 3 V, VCC = 3 V max. - - - - - - 17 12 - - P- 1 dB - 36 - dBm VA = 0 V, VB = 3 V, VCC = 3 V f = 0.9 GHz Input power at 1 dB gain compression (RF1 - RFC) 100% duty cycle - - 34.5 - dBm - Third order intercept point Two tone input power = 18 dBm each f = 0.8 GHZ f = 1.9 GHz IP3 dBm VCC = 3 V, VA,B = 0 V (3 V) VSWR (RF1 - RFC; RF2 - RFC) 0.5 GHz - 2 GHz - - 57 57 - - VSWR - 1.2:1 - - - Control current - - - 100 A - Supply current - - - 100 A - Data Book 655 V1.0, 2001-01-01 GaAs Components CSY 210 IC1 C3 RF1 100 pF B 8 RF2 7 GND2 6 A 5 1 RF1 2 GND1 3 B 4 RFC C6 1 nF C5 C2 RF2 100 pF C1 VCC C4 VCC 100 pF Figure 2 1 nF 1 nF CSY 210 RFC A EHT09015 Evaluation Board Schematic RF1 B CSY-SPDT RF2 RFC ver 2.0 02.07.98 VCC A EHT09016 Figure 3 Evaluation Board (3:1 Scale) Data Book 656 V1.0, 2001-01-01 GaAs Components CSY 210 C3 C2 C6 IC1 C5 C1 C4 EHT09018 Figure 4 Board Material: TLX-9-0150 (TACONIC); r = 2.4; h = 0.4 mm Evaluation Board Parts List Part Type Position Description Manufacturer Part Number Capacitor C2, C3, C5 100 pF 0603 Epcos - Capacitor C1, C4, C6 1 nF 0603 Epcos - Measured Results (all Ports connected to 50 ; PIN = 10 dBm unless otherwise specified) Data Book 657 V1.0, 2001-01-01 GaAs Components CSY 210 Insertion Loss (RFC, RF1 - Port @ A = 0 V; B = 3 V; VCC = 3 V) Insertion Loss (RFC, RF2 - Port @ A = 3 V; B = 0 V; VCC = 3 V) EHT09019 0 dB -0.4 Insertion Loss -0.4 Insertion Loss EHT09021 0 dB -0.6 -0.8 -0.6 -0.8 -1 -1 -1.2 -1.2 -1.4 -1.4 -1.6 -1.6 -1.8 -1.8 -2 0 0.5 1 1.5 2 -2 GHz 3 0 0.5 1 1.5 2 f f Return Loss (RFC, RF1 - Port @ A = 0 V; B = 3 V; VCC = 3 V) Return Loss (RFC, RF2 - Port @ A = 3 V; B = 0 V; VCC = 3 V) EHT09020 0 EHT09022 0 dB dB -5 Return Loss -5 Return Loss GHz 3 -10 -10 -15 -15 -20 RF1-Port RFC-Port -20 -25 -25 -30 RF2-Port RFC-Port -30 0 0.5 1 1.5 -35 GHz 3 2 f Data Book 0 0.5 1 1.5 2 GHz 3 f 658 V1.0, 2001-01-01 GaAs Components CSY 210 Isolation (RF1, RF2 - Port @ A = 0 V; B = 3 V; VCC = 3 V) Isolation (RF1, RF2 - Port @ A = 3 V; B = 0 V; VCC = 3 V) EHT09023 -10 -15 -10 -15 -20 -20 -25 -25 -30 -30 -35 -35 -40 0 0.5 1 1.5 2 EHT09025 0 dB -5 Isolation Isolation 0 dB -5 -40 GHz 3 0 0.5 1 1.5 2 f f Return Loss (RF1, RF2 - Port @ A = 3 V; B = 0 V; VCC = 3 V) Return Loss (RF1, RF2 - Port @ A = 0 V; B = 3 V; VCC = 3 V) EHT09024 0 RF2-Port dB -5 -5 Return Loss Return Loss EHT09026 0 RF1-Port dB GHz 3 -10 -15 -10 -15 -20 -20 RF2-Port -25 RF1-Port -25 -30 -35 0 0.5 1 1.5 2 -30 GHz 3 f Data Book 0 0.5 1 1.5 2 GHz 3 f 659 V1.0, 2001-01-01 GaAs Components CSY 210 Insertion Loss vs. Input Power (RF2 - RFC @ A = VCC = 3 V; B= 0 V; f = 900 MHz pulsed: TON = 577 S; 12.5% duty cycle GSM-Signal) Isolation vs. Input Power (RF2 - RF1 @ A = VCC = 3 V; B = 0 V; f = 900 MHz pulsed: TON = 577 S; 12.5% duty cycle GSM-Signal) EHT09027 0 dB -0.4 -12 Isolation Insertion Loss EHT09028 -10 dB -11 -0.6 -0.8 3V -13 -14 -1 -15 -1.2 -16 -1.4 3V -1.6 -17 -1.8 -18 -2 Data Book 30 31 32 33 34 Input Power 35 -19 dBm 37 660 30 31 32 33 34 Input Power 35 dBm 37 V1.0, 2001-01-01 GaAs Components CSY 210 Package Outlines SCT-598 (Special Package) 2.9 0.2 1.1 max. 0.75 1 2 3 4 +0.2 acc.to DIN 6784 0.2 +0.1 -0.05 0.5 +0.1 -0.05 0.15 M 2.6 max. 0.25 min. 7 6 5 0.20 B Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Book M A A GPW09182 M 0.1 max. B 2.1 0.15 10 max. 8 10 max . 0.15 +0.1 -0.06 0.6 1.6 + 0.1 B 661 Dimensions in mm V1.0, 2001-01-01 Data Sheets: Microwave Semiconductors 24 - 27 GHz GaAs High Power Amplifier MMIC 24 - 27 GHz HPA Preliminary Data Sheet * Two-Stage Monolithic Microwave Integrated Circuit (MMIC) HEMT Amplifier * Input/Output matched to 50 * Frequency range: 24 GHz to 27 GHz * Gain > 12 dB * P-1dB > 27 dBm * PSAT > 29 dBm * Chip size: 2.71 mm x 3.0 mm ESD: Electrostatic discharge sensitive device, observe handling precautions! Description This two-stage GaAs MMIC high power amplifier is intended for use in radio link applications. It provides an output power of 27 dBm at 1 dB gain compression. The device is fabricated with a 0.18 micron Pseudomorphic InGaAs/AlGaAs/GaAs High Electron Mobility Transistor processing technology. Type Marking Ordering Code Package 24 - 27 GHz HPA - on request Chip Electrical Specifications VG = 0 V, VD = 5 V, ID = 930 mA Parameter Limit Values Unit Test Conditions min. typ. max. Frequency Range 24 - 27 GHz - P-1dB @ 26 GHz - 27 - dBm - PSAT @ 26 GHz - 29 - dBm - Gain @ 26 GHz - 12 - dB - Input Return Loss - < - 10 - dB - Output Return Loss - < - 10 - dB - Data Book 663 V1.0, 2001-01-01 GaAs Components 24 - 27 GHz HPA Measured Data (on chip measurements) On-wafer measurement: VGS = 0.1 V, VDS = 5 V, IDS1 = 290 mA, IDS2 = 640 mA Output Power 20 dB 30 15 25 10 20 5 15 0 10 -5 5 -10 0 -10 -5 0 5 10 Input Power 15 Gain EHT09205 35 dBm -15 dBm 25 Maximum Ratings Parameter Symbol Value Unit Drain voltage VD 5 V Gate voltage VG - 2 ... + 0.8 V Technology Data Parameter Value Chip thickness 75 m Chip size 2.71 mm x 3.0 mm DC/RF Bond pads 100 m x 100 m/80 m x 80 m Bond pad material Au (plated gold) Chip passivation SiN (silicon nitride) Data Book 664 V1.0, 2001-01-01 GaAs Components 24 - 27 GHz HPA Recommendation of Bonding Conditions Parameter Thermocompression Nailhead, without Ultrasonic Wedge Bonding Bond Pull Test Mil 883, > 2 g Table Temp. 250 C 250 C 1 : 2.5 g Tool Temp. 180 C 150 C 2 : 3.1 g Scrub 100 Hz - 3 : 3.2 g Bond Force 50 g 25 g 4 : 3.0 g Wire Diameter 25 m 17 m 5 : 2.8 g VG1 VD1 VG2 VD2 RF OUT RF IN VG1 VD1 VG2 VD2 Figure 1 EHT09206 Bond Plan The gate and drain bias voltages can be applied from only one side of the chip, they are connected internally. Capacitors to ground with approximately 100 pF should be used to block the VG and VD bias pads. Data Book 665 V1.0, 2001-01-01 24 - 27 GHz GaAs Mixer MMIC 24 - 27 GHz Mixer Preliminary Data Sheet * * * * * * Monolithic Microwave Integrated Circuit (MMIC) Single Balanced Mixer (coplanar design) Two IF ports allow the use of the MMIC as up- and down-converter with high LO-RF isolation Input/Output matched to 50 Frequency range: 24 GHz to 27 GHz Conversion Loss 8 dB @ PLO = 11 dBm Chip size: 3.25 mm x 2.0 mm ESD: Electrostatic discharge sensitive device, observe handling precautions! Description This GaAs MMIC is intended for use in radio link applications. The mixer operating as resistive FET mixer provides good intermodulation characteristics with no DC power consumption and exhibits a conversion loss of 7 dB for a LO-Power of 11 dBm. The LO-RF isolation is superior to 30 dB in up- and down-conversion mode. The MMIC is fabricated with a 0.13 micron Pseudomorphic InGaAs/AlGaAs/GaAs High Electron Mobility Transistor processing technology. Type Marking Ordering Code Package 24 - 27 GHz Mixer - on request Chip Electrical Specifications (VG1 = VG2 = 0 V) Parameter Limit Values Unit Test Conditions min. typ. max. Frequency Range 24 - 27 GHz - Conversion loss @ PLO = 11 dBm - 8 - dB - LO input power - 10 15 dBm - Data Book 666 V1.0, 2001-01-01 GaAs Components 24 - 27 GHz Mixer Measured Data (on chip measurements) VGS1 = VGS2 = 0 V, unless otherwise specified Down-Converter Mode; IF1 and IF2 via 0 Combiner LO RF 90 90 IF2 IF1 0 IF EHT09195 Figure 1 Conversion Gain vs. LO Power fLO = 25.7 GHz, fRF = 25.5 GHz, fIF = 0.2 GHz, PIN(RF) = - 5 dBm EHT09196 Conversion Gain 0.0 dB -2.5 -5.0 -7.5 -10.0 -12.5 -15.0 -17.5 -20.0 -15 Data Book -10 -5 0 LO Input Power 5 dBm 15 667 V1.0, 2001-01-01 GaAs Components 24 - 27 GHz Mixer Up-Converter Mode; IF1 and IF2 via 180 Combiner LO RF 90 90 IF2 IF1 180 IF EHT09197 Figure 2 Conversion Gain vs. LO Power fLO = 25.7 GHz, fIF = 200 MHz, PIF = - 0 dBm, PIN(ZF) = 0 dBm, fRF = 25.9 GHz EHT09198 Conversion Gain / Upper Sideband 0.0 dB -2.5 -5.0 -7.5 -10.0 -12.5 -15.0 -17.5 -20.0 -15 Data Book -10 -5 0 LO Input Power 5 dBm 15 668 V1.0, 2001-01-01 GaAs Components 24 - 27 GHz Mixer Conversion Gain vs. RF Power fLO = 25.7 GHz, fIF = 200 MHz, fRF = 25.9 GHz EHT09199 Conversion Gain / Upper Sideband 0.0 dB -2.5 -5.0 -7.5 -10.0 -12.5 PLO = 13.3 dBm 10.6 dBm 7.2 dBm -15.0 -17.5 -20.0 -15 Data Book -10 -5 0 ZF Input Power 5 dBm 15 669 V1.0, 2001-01-01 GaAs Components 24 - 27 GHz Mixer Output Spectrum in Up-Converter Mode at RF Port Input Output at RF-port LO: 25.7 GHz, 10.6 dBm PLO = - 30 dBm IF: 200 MHz, 4.7 dBm PRF = - 11 dBm ATTEN 30 dB RL 20.0 dBm MKR-11.00 dBm 25.903 GHz 10 dB/ MKR 25.903 GHz -10.83 dBm Center 25.700 GHz RBW 1.0 MHz *VBW 100 kHz SPAN 1.000 GHz SWP 50.0 ms EHT09200 Figure 3 Technology Data Parameter Value Chip thickness 95 m Chip size 3.25 mm x 2.0 mm DC/RF Bond pads 100 m x 100 m/70 m x 70 m Bond pad material Au (plated gold) Chip passivation SiN (silicon nitride) Data Book 670 V1.0, 2001-01-01 GaAs Components 24 - 27 GHz Mixer Recommendation of Bonding Conditions Parameter Thermocompression Nailhead, without Ultrasonic Wedge Bonding Bond Pull Test Mil 883, > 2 g Table Temp. 250 C 250 C 1 : 2.5 g Tool Temp. 180 C 150 C 2 : 3.1 g Scrub 100 Hz - 3 : 3.2 g Bond Force 50 g 25 g 4 : 3.0 g Wire Diameter 25 m 17 m 5 : 2.8 g Figure 4 GND IF2 GND IF1 GND GND Coplanar GND RF Coplanar GND VGS1 VGS2 Coplanar GND LO Coplanar GND EHT09201 Bond Plan VGS1 and VGS2 can directly be bonded to ground. Blocking capacitors in the range of 100 pF should be used if a gate voltage (VGS1, VGS2) is applied to the mixer diodes. Data Book 671 V1.0, 2001-01-01 24 - 28 GHz GaAs Doubler MMIC 24 - 28 GHz Doubler Preliminary Data Sheet * * * * * Monolithic Microwave Integrated Circuit (MMIC) Frequency Doubler (coplanar design) Input/Output matched to 50 Input frequency range: 12 GHz to 14 GHz Output frequency range: 24 GHz to 28 GHz Chip size: 2.5 mm x 1.0 mm ESD: Electrostatic discharge sensitive device, observe handling precautions! Description This GaAs MMIC Frequency Doubler is intended for use in radio link applications. It provides a gain of - 8 dB at an input frequency of 14 GHz. The device is fabricated with a 0.13 micron Pseudomorphic InGaAs/AlGaAs/GaAs High Electron Mobility Transistor processing technology. Type Marking Ordering Code Package 24 - 28 GHz Doubler - on request Chip Electrical Specifications (VDS = 3 V) Parameter Limit Values Unit Test Conditions min. typ. max. Input frequency range f0 12 - 14 GHz - Gain - -8 - dB - Input power 8 - 15 dBm - Output power at f0 - < - 15 - dBm - VGS -1 - 0.5 0 V - IDS @ 14 dBm input power - 40 - mA - Data Book 672 V1.0, 2001-01-01 GaAs Components 24 - 28 GHz Doubler Measured Data (on chip measurements) f0 = 12.75 GHz, VGS = - 0.5 V, VDS = 3 V EHT09208 15 dBm 10 dB 5 10 5 0 0 -5 -5 -10 Conversion Gain (2 x f 0 ) Output Power 2 x f0 -15 -10 3 x f0 -20 -15 f0 -20 -5 0 5 10 Input Power 15 -25 dBm 25 Technology Data Parameter Value Chip thickness 95 m Chip size 2.5 mm x 1.0 mm DC/RF Bond pads 100 m x 100 m/70 m x 70 m Bond pad material Au (plated gold) Chip passivation SiN (silicon nitride) Data Book 673 V1.0, 2001-01-01 GaAs Components 24 - 28 GHz Doubler Recommendation of Bonding Conditions Parameter Thermocompression Nailhead, without Ultrasonic Wedge Bonding Bond Pull Test Mil 883, > 2 g Table Temp. 250 C 250 C 1 : 2.5 g Tool Temp. 180 C 150 C 2 : 3.1 g Scrub 100 Hz - 3 : 3.2 g Bond Force 50 g 25 g 4 : 3.0 g Wire Diameter 25 m 17 m 5 : 2.8 g Coplanar GND Coplanar GND x2 RF OUT RF IN Coplanar GND Coplanar GND GND Figure 1 VDS VGS GND EHT09209 Bond Plan Capacitors with approximately 100 pF should be used to block the VGS and VDS bias pads to ground. Data Book 674 V1.0, 2001-01-01 24 - 30 GHz GaAs Low Noise Amplifier MMIC 24 - 30 GHz LNA Preliminary Data Sheet * * * * * * Three-Stage Monolithic Microwave Integrated Circuit (MMIC) HEMT Amplifier Input/Output matched to 50 Frequency range: 24 GHz to 30 GHz Gain > 18 dB Noise Figure < 3 dB Chip size: 2.15 mm x 1.45 mm ESD: Electrostatic discharge sensitive device, observe handling precautions! Description This three-stage GaAs MMIC Low Noise Amplifier is intended for use in radio link applications. It provides a gain of 18 dB with a noise figure of less than 3 dB. The device is fabricated with a 0.13 micron Pseudomorphic InGaAs/AlGaAs/GaAs High Electron Mobility Transistor processing technology. Type Marking Ordering Code Package 24 - 30 GHz LNA - on request Chip Electrical Specifications (VG = 0.1 V, VD = 5 V, ID = 85 mA) Parameter Limit Values Unit Test Conditions min. typ. max. Frequency Range 24 - 30 GHz - Gain - 18 - dB - Noise Figure - 3 - dB - 1 dB gain compression - 12 - dBm - Input Return Loss - < - 10 - dB - Output Return Loss - < - 10 - dB - Data Book 675 V1.0, 2001-01-01 GaAs Components 24 - 30 GHz LNA Measured Data (on chip measurements) VGS = 0.1 V, VDS = 5 V, IDS = 85 mA; unless otherwise specified EHT09210 30 10 dB dB dB 10 25 8 20 7 6 EHT09211 0 Mag (S11) 9 Gain Noise Figure 12 -10 15 5 -20 4 10 3 2 -30 5 1 0 20 22 24 26 28 30 32 34 -40 0 GHz 40 10 20 GHz 50 30 f f EHT09212 30 dB 25 Mag (S21) 0 20 15 10 5 0 -5 -10 0 10 20 30 GHz 50 f Data Book 676 V1.0, 2001-01-01 GaAs Components 24 - 30 GHz LNA Maximum Ratings Parameter Symbol Value Unit Drain voltage VD 5 V Gate voltage VG - 2 ... + 0.8 V Technology Data Parameter Value Chip thickness 95 m Chip size 2.15 mm x 1.45 mm DC/RF Bond pads 100 m x 100 m/90 m x 60 m Bond pad material Au (plated gold) Chip passivation SiN (silicon nitride) Data Book 677 V1.0, 2001-01-01 GaAs Components 24 - 30 GHz LNA Recommendation of Bonding Conditions Parameter Thermocompression Nailhead, without Ultrasonic Wedge Bonding Bond Pull Test Mil 883, > 2 g Table Temp. 250 C 250 C 1 : 2.5 g Tool Temp. 180 C 150 C 2 : 3.1 g Scrub 100 Hz - 3 : 3.2 g Bond Force 50 g 25 g 4 : 3.0 g Wire Diameter 25 m 17 m 5 : 2.8 g GND RF OUT GND GND RF IN GND VG1 VD1 Figure 1 Data Book VG2 VD2 VG3 VD3 EHT09213 Bond Plan 678 V1.0, 2001-01-01 24 - 32 GHz GaAs Low Noise Amplifier MMIC 24 - 32 GHz LNA Preliminary Data Sheet * * * * * * Two-Stage Monolithic Microwave Integrated Circuit (MMIC) HEMT Amplifier (coplanar design) Input/Output matched to 50 Frequency range: 24 GHz to 32 GHz Gain > 18 dB Noise Figure < 3 dB Chip size: 2.15 mm x 1.45 mm ESD: Electrostatic discharge sensitive device, observe handling precautions! Description This two-stage GaAs MMIC Low Noise Amplifier is intended for use in radio link applications. It provides a gain of 18 dB with a noise figure of less than 3 dB. The device is fabricated with a 0.13 micron Pseudomorphic InGaAs/AlGaAs/GaAs High Electron Mobility Transistor processing technology. Type Marking Ordering Code Package 24 - 32 GHz LNA - on request Chip Electrical Specifications (VG = 0.1 V, VD = 5 V, ID = 85 mA) Parameter Limit Values Unit Test Conditions min. typ. max. Frequency Range 24 - 32 GHz - Gain - 18 - dB - Noise Figure - 3 - dB - 1 dB gain compression - 12 - dBm - Input Return Loss - < - 10 - dB - Output Return Loss - < - 10 - dB - Data Book 679 V1.0, 2001-01-01 GaAs Components 24 - 32 GHz LNA Measured Data (on chip measurements) VGS = 0.1 V, VDS = 5 V, IDS = 85 mA; unless otherwise specified EHT09214 30 10 dB dB dB 10 25 8 20 7 6 EHT09215 0 Mag (S11) 9 Gain Noise Figure 12 -10 15 5 -20 10 4 3 2 -30 5 1 0 20 22 24 26 28 30 32 34 0 GHz 40 -40 f 10 20 GHz 50 30 f EHT09216 30 dB 25 Mag (S21) 0 20 15 10 5 0 -5 -10 0 10 20 30 GHz 50 f Data Book 680 V1.0, 2001-01-01 GaAs Components 24 - 32 GHz LNA Maximum Ratings Parameter Symbol Value Unit Drain voltage VD 5 V Gate voltage VG - 2 ... + 0.8 V Technology Data Parameter Value Chip thickness 95 m Chip size 2.15 mm x 1.45 mm DC/RF Bond pads 100 m x 100 m/90 m x 60 m Bond pad material Au (plated gold) Chip passivation SiN (silicon nitride) Data Book 681 V1.0, 2001-01-01 GaAs Components 24 - 32 GHz LNA Recommendation of Bonding Conditions Parameter Thermocompression Nailhead, without Ultrasonic Wedge Bonding Bond Pull Test Mil 883, > 2 g Table Temp. 250 C 250 C 1 : 2.5 g Tool Temp. 180 C 150 C 2 : 3.1 g Scrub 100 Hz - 3 : 3.2 g Bond Force 50 g 25 g 4 : 3.0 g Wire Diameter 25 m 17 m 5 : 2.8 g GND RF OUT GND GND RF IN GND VG1 VD1 Figure 1 Data Book VG2 VD2 VG3 VD3 EHT09217 Bond Plan 682 V1.0, 2001-01-01 27 - 31 GHz GaAs High Power Amplifier MMIC 27 - 31 GHz HPA Preliminary Data Sheet * * * * * * * Two-Stage Monolithic Microwave Integrated Circuit (MMIC) HEMT Amplifier Input/Output matched to 50 Frequency range: 27 GHz to 31 GHz Gain > 11 dB P-1dB > 26 dBm PSAT > 28 dBm Chip size: 2.71 mm x 3.0 mm ESD: Electrostatic discharge sensitive device, observe handling precautions! Description This two-stage GaAs MMIC high power amplifier is intended for use in radio link applications. It provides an output power of 26 dBm at 1 dB gain compression. The device is fabricated with a 0.18 micron Pseudomorphic InGaAs/AlGaAs/GaAs High Electron Mobility Transistor processing technology. Type Marking Ordering Code Package 27 - 31 GHz HPA - on request Chip Electrical Specifications (VG = 0.3 V, VD = 5 V, ID = 1020 mA) Parameter Limit Values Unit Test Conditions min. typ. max. Frequency Range 27 - 31 GHz - P-1dB @ 30 GHz - 26 - dBm - PSAT @ 30 GHz - 28 - dBm - Gain @ 30 GHz - 11 - dB - Input Return Loss - < - 10 - dB - Output Return Loss - < - 10 - dB - Data Book 683 V1.0, 2001-01-01 GaAs Components 27 - 31 GHz HPA Measured Data (on chip measurements) VGS = 0.3 V, VDS = 5 V, IDS1 = 380 mA; IDS2 = 640 mA; f = 27.25 GHz, 29.5 GHz, 31.75 GHz EHT09218 30 dBm 14 dB 13 25 12 20 27.25 GHz 15 11 31.75 GHz 10 10 5 9 0 8 -5 -10 -5 0 5 Input Power Gain Output Power 29.5 GHz 10 dBm 20 7 Maximum Ratings Parameter Symbol Value Unit Drain voltage VD 5 V Gate voltage VG - 2 ... + 0.8 V Technology Data Parameter Value Chip thickness 75 m Chip size 2.71 mm x 3.0 mm DC/RF Bond pads 100 m x 100 m/80 m x 80 m Bond pad material Au (plated gold) Chip passivation SiN (silicon nitride) Data Book 684 V1.0, 2001-01-01 GaAs Components 27 - 31 GHz HPA Recommendation of Bonding Conditions Parameter Thermocompression Nailhead, without Ultrasonic Wedge Bonding Bond Pull Test Mil 883, > 2 g Table Temp. 250 C 250 C 1 : 2.5 g Tool Temp. 180 C 150 C 2 : 3.1 g Scrub 100 Hz - 3 : 3.2 g Bond Force 50 g 25 g 4 : 3.0 g Wire Diameter 25 m 17 m 5 : 2.8 g VG1 VD1 VG2 VD2 RF OUT RF IN VG1 VD1 VG2 VD2 Figure 1 Data Book EHT09219 Bond Plan 685 V1.0, 2001-01-01 27 - 32 GHz GaAs Mixer MMIC 27 - 32 GHz Mixer Preliminary Data Sheet * * * * * Monolithic Microwave Integrated Circuit (MMIC) Single Balanced Mixer (coplanar design) Input/Output matched to 50 Frequency range: 27 GHz to 32 GHz Conversion Loss 9 dB @ PLO = 11 dBm Chip size: 3.25 mm x 2.0 mm ESD: Electrostatic discharge sensitive device, observe handling precautions! Description This GaAs MMIC Mixer is intended for use in radio link applications. It provides a conversion loss of 9 dB for a LO-Power of 11 dBm and down conversion to 200 MHz. The device is fabricated with a 0.13 micron Pseudomorphic InGaAs/AlGaAs/GaAs High Electron Mobility Transistor processing technology. Type Marking Ordering Code Package 27 - 32 GHz Mixer - on request Chip Electrical Specifications (VG1 = VG2 = 0 V) Parameter Limit Values Unit Test Conditions min. typ. max. Frequency Range 27 - 32 GHz - Conversion loss @ PLO = 11 dBm - 9 - dB - LO input power - 10 15 dBm - Data Book 686 V1.0, 2001-01-01 GaAs Components 27 - 32 GHz Mixer Measured Data (on chip measurements) VGS1 = VGS2 = 0 V, unless otherwise specified; Down-Converter Mode; IF1 and IF2 via 0 Combiner LO RF 90 90 IF2 IF1 0 IF EHT09220 Figure 1 Data Book 687 V1.0, 2001-01-01 GaAs Components 27 - 32 GHz Mixer Conversion Gain vs. LO Power fLO = 29.5 GHz, fRF = 29.7 GHz, fIF = 0.2 GHz, PinRF = - 6.8 dBm EHT09221 Conversion Gain 0.0 dB -2.5 -5.0 -7.5 -10.0 -12.5 -15.0 -17.5 -20.0 -15 -10 -5 0 LO Input Power 5 dBm 15 Technology Data Parameter Value Chip thickness 95 m Chip size 3.25 mm x 2.0 mm DC/RF Bond pads 100 m x 100 m/85 m x 65 m Bond pad material Au (plated gold) Chip passivation SiN (silicon nitride) Data Book 688 V1.0, 2001-01-01 GaAs Components 27 - 32 GHz Mixer Recommendation of Bonding Conditions Parameter Thermocompression Nailhead, without Ultrasonic Wedge Bonding Bond Pull Test Mil 883, > 2 g Table Temp. 250 C 250 C 1 : 2.5 g Tool Temp. 180 C 150 C 2 : 3.1 g Scrub 100 Hz - 3 : 3.2 g Bond Force 50 g 25 g 4 : 3.0 g Wire Diameter 25 m 17 m 5 : 2.8 g Figure 2 GND IF2 GND IF1 GND GND Coplanar GND RF Coplanar GND VGS1 VGS2 Coplanar GND LO Coplanar GND EHT09222 Bond Plan VGS1 and VGS2 can directly be bonded to ground. Blocking capacitors in the range of 100 pF should be used if a gate voltage (VGS1, VGS2) is applied to the mixer diodes. Data Book 689 V1.0, 2001-01-01 27 - 33 GHz GaAs Tripler MMIC 27 - 33 GHz Tripler Preliminary Data Sheet * * * * * Monolithic Microwave Integrated Circuit (MMIC) Frequency Tripler (coplanar design) Input/Output matched to 50 Input frequency range: 9 GHz to 11 GHz Output frequency range: 27 GHz to 33 GHz Chip size: 2.25 mm x 2.0 mm ESD: Electrostatic discharge sensitive device, observe handling precautions! Description This GaAs MMIC frequency tripler is intended for use in radio link applications. The device is fabricated with a 0.13 micron Pseudomorphic InGaAs/AlGaAs/GaAs High Electron Mobility Transistor processing technology. Type Marking Ordering Code Package 27 - 33 GHz Tripler - on request Chip Electrical Specifications (VDS = 3 V) Parameter Limit Values Unit Test Conditions min. typ. max. Input frequency range f0 9 - 11 GHz - Gain - - 12 - dB - Input power 10 - 15 dBm - Output power at f0 - < - 15 - dBm - VGS -1 - 0.75 0 V - IDS @ 14 dBm input power - 40 - mA - Data Book 690 V1.0, 2001-01-01 GaAs Components 27 - 33 GHz Tripler Measured Data (on chip measurements) f0 = 9.933 GHz, VGS = - 0.75 V, VDS = 3 V Output Power 10 dB 10 5 5 0 3xf 0 -5 -5 -10 Gain EHT09223 15 dBm -15 -10 2xf -15 -20 -5 -20 1xf 0 5 10 Input Power 15 -25 dBm 25 Technology Data Parameter Value Chip thickness 95 m Chip size 2.25 mm x 2.0 mm DC/RF Bond pads 100 m x 100 m/70 m x 70 m Bond pad material Au (plated gold) Chip passivation SiN (silicon nitride) Data Book 691 V1.0, 2001-01-01 GaAs Components 27 - 33 GHz Tripler Recommendation of Bonding Conditions Parameter Thermocompression Nailhead, without Ultrasonic Wedge Bonding Bond Pull Test Mil 883, > 2 g Table Temp. 250 C 250 C 1 : 2.5 g Tool Temp. 180 C 150 C 2 : 3.1 g Scrub 100 Hz - 3 : 3.2 g Bond Force 50 g 25 g 4 : 3.0 g Wire Diameter 25 m 17 m 5 : 2.8 g VG VD Coplanar GND Coplanar GND RF IN RF OUT Coplanar GND x3 Coplanar GND EHT09224 Figure 1 Bond Plan Capacitors with approximately 100 pF should be used to block the VG and VD bias pads to ground. Data Book 692 V1.0, 2001-01-01 Silicon Dual Flip Chip Schottky Diode BAT 14-077D Preliminary Data Sheet * * Dual Schottky medium Barrier Mixer Diode For W-band application up to 80 GHz ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BAT 14-077D - Q62702-D1354 EHT09236 Pin Configuration - - - Package FLIP CHIP Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage VR 3 V Forward current IF 25 mA Total power dissipation (TS = 25 C) Ptot 20 mW Junction temperature Tj 150 C Operating temperature range Top - 40 ... + 150 C Storage temperature Tstg - 55 ... + 150 C Data Book 693 V1.0, 2001-01-01 GaAs Components BAT 14-077D Electrical Characteristics at TA = 25 C, unless otherwise specified Parameter Symbol Limit Values min. typ. max. Unit Test Conditions DC Characteristics Breakdown voltage V(BR) 3 - - V I(BR) = 100 A Forward voltage VF - 0.4 0.5 V IF = 100 A Diode capacitance1) CT - 30 - fF VR = 0 V Forward resistance RF - 7 10 IF = 10 mA AC Characteristics 1) Simulated values test conditions t.b.f. Data Book 694 V1.0, 2001-01-01 GaAs Components BAT 14-077D Chip Layout FLIP CHIP 250 m 125 m 420 m 550 m Gold-bumps (height: 10 m) Nitride-passivation EHT09237 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". Data Book 695 Dimensions in mm V1.0, 2001-01-01 Silicon Single Flip Chip Schottky Diode BAT 14-077S Preliminary Data Sheet * * Single Schottky medium Barrier Mixer Diode For W-band application up to 80 GHz ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BAT 14-077S - Q62702-D1353 EHT09238 Pin Configuration - - - Package FLIP CHIP 1 Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage VR 3 V Forward current IF 25 mA Total power dissipation (TS = 25 C) Ptot 20 mW Junction temperature Tj 150 C Operating temperature range Top - 40 ... + 150 C Storage temperature Tstg - 55 ... + 150 C Data Book 696 V1.0, 2001-01-01 GaAs Components BAT 14-077S Electrical Characteristics at TA = 25 C, unless otherwise specified Parameter Symbol Limit Values min. typ. max. Unit Test Conditions DC Characteristics Breakdown voltage V(BR) 3 - - V I(BR) = 10 A Forward voltage VF - 0.4 0.5 V IF = 100 A Diode capacitance1) CT - 30 - fF VR = 0 V Forward resistance RF - 7 10 IF = 10 mA AC Characteristics 1) Simulated values test conditions t.b.f. Data Book 697 V1.0, 2001-01-01 GaAs Components BAT 14-077S Chip Layout FLIP CHIP 1 330 m 220 m 400 m 520 m Gold-bumps (height: 25 m) Nitride-passivation EHT09239 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". Data Book 698 Dimensions in mm V1.0, 2001-01-01 77 GHz VCO for Car Radar Systems T625_VCO2_W Preliminary Data Sheet * * * * Operating Frequency: 76 - 77 GHz Tuning Range > 1 GHz Output matched to 50 Application in Car Radar Systems ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Package T625_VCO2_W - Q62702-G172 Chip The T625_VCO2_W is a voltage controlled millimeter wave oscillator MMIC, suitable for signal generation in modern, MMIC-based car radar systems. It is intended to be used in PLL stabilized radar transceivers, especially for FMCW radar systems. The MMIC will be delivered with wirebond compatible pads. To ease substrate design, the MMIC's layout can be provided in dxf- or gds2-format. Circuit Description The T625_VCO2_W incorporates a two-stage, PHEMT - based amplifier (130 nm gate length) and an electrically tunable feedback loop. By adjusting the control voltage VTune of the phase-shifting elements in the feedback loop, the frequency of the oscillator is controlled. Phase Shifter Voltage Divider /4 - Transformer 4 Two-Stage Amplifier Tunung Voltage Wilkinson Power Divider RF Output EHT09284 Figure 1 Data Book Circuit Description 699 V1.0, 2001-01-01 GaAs Components T625_VCO2_W 9 RF OUT VTU VG1 VD1 VG2 VD2 Infineon 2 VCO77CR 1 Figure 2 2 3 4 5 6 7 8 EHT09285 Pin Configuration Pin Configuration Pad Symbol Function 1 VTune Tuning Voltage 2 VG1 Gate Voltage 1st PHEMT Amplifier Stage 3 GND Chip DC Ground 4 VD1 Drain Voltage 1st PHEMT Amplifier Stage 5 VG2 Gate Voltage 2nd PHEMT Amplifier Stage 6 GND Chip DC Ground 7 VD2 Drain Voltage 2nd PHEMT Amplifier Stage 8 GND Chip DC Ground 9 RF OUT Coplanar RF Output, matched to 50 Typically 46 m RF Signal Pad Width, 37 m Gap to GND Pads RF Probing: Use 100 to 120 m Ground - Signal - Ground Pitch. RF Ground is de-coupled from DC Ground, max. insulation voltage: 5 V. The bias pads (1 - 8) have 150 m pitch. Data Book 700 V1.0, 2001-01-01 GaAs Components T625_VCO2_W Characteristic - General and DC Parameter Symbol Typ. Value Unit Ambient Temperature1) Tamb - 40 to + 105 C Drain Supply Voltage, 1st Stage VD1 3.5 V Gate Supply Voltage, 1st Stage VG1 0.3 V Drain Supply Current, 1st Stage ID1 16 mA Drain Supply Voltage, 2nd Stage VD2 3.5 V Gate Supply Voltage, 2nd Stage VG2 0.3 V Drain Supply Current, 2nd Stage ID2 16 mA Parameter Symbol Typ. Value Unit Usable Tuning Range1) fTune 76 to 77 GHz RF Output Power in Tuning Range1) POUT >5 dBm Phase Noise (free running) LPh,free - 75 dBc/Hz @ 1 MHz Tuning Voltage VTune - 1 to + 1 V Maximum Tuning Slope1)) STune -3 GHz/V Minimal Tuning Slope1) STune -1 GHz/V Tuning Port Input Impedance ZTune > 500 1) Chip's backside mounted on a metal heatsink. Characteristic - RF 1) The given parameters assume 50 RF load impedance and an ambient (= chip's backside) temperature of Tamb = 25 C. The chip's backside is mounted on a metal plate. Chip thickness is 100 m. The T625_VCO2_W is intended for wire bonding only. Flip chip mounting with stud bumps will lead to a shift in center frequency. Samples ready for flip chip mounting with stud bumps are available on request. Data Book 701 V1.0, 2001-01-01 GaAs Components T625_VCO2_W Geometry Parameter Symbol Typ. Value Unit Chip Thickness dChip 100 m Chip Outline AChip 1.67 x 0.87 mm2 Bond Pad Size DC ABondpadDC 100 x 100 m2 Bond Pad Pitch DC DC Pitch 150 m Bond Pad Size RF ABondpadRF 50 x 50 m2 Bond Pad Pitch RF1) CPW Pitch 120 m 1) RF Probing: Use G-S-G Probes with 100 to 120 m Pitch. Recommended Bonding Conditions Parameter Thermal Compression1) Wedge Bonding Unit Chuck Temp. 250 250 C Tool Temp. 180 150 C Scrub 100 - Hz Bond Force 50 25 g Wire Diameter 25 17 m Bond Pull Test (1) 2.52) g Bond Pull Test (2) 3.12) g Bond Pull Test (3) 3.22) g Bond Pull Test (4) 3.02) g Bond Pull Test (5) 2.82) g 1) 2) Nailhead, no ultrasonic See Mil 883, > 2 g Data Book 702 V1.0, 2001-01-01 GaAs Components T625_VCO2_W Application Note: Infineon Semiconductors in Modern ACC Radar Systems Infineon provides a variety of car radar products to simplify the design of modern, MMICbased car radar systems: 77 GHz VCO T625_VCO2_W VTune 77 GHz Amplifiers 2 x T626_MPA2_W RF Transceive Mixer 2 x BAT14-077D Antenna +14 dBm RF Infineon PLL Module ACC_PLL_1 IF 1 GHz 5th Harmonic Mixer BAT14-077D LO 15.1 GHz IF 1-100 kHz typ. Sweep Control Low Noise Ref. Oscillator ACC_DRO15.1_1 IF Processing and Sweep Control: Infineon TriCore TM DSP-Controller EHT09246 Figure 3 Data Book Principle of a Modern one-beam, MMIC-based FMCW Radar System 703 V1.0, 2001-01-01 GaAs Components T625_VCO2_W T625_VCO2_W PHEMT-based 76 - 77 GHz, two-stage voltage controlled oscillator (VCO) GaAs MMIC with + 5 dBm output power. T626_MPA2_W PHEMT-based 76 - 77 GHz, two-stage medium power amplifier (MPA) with max. + 13.5 dBm RF output power and 10 dB smallsignal gain at 76.5 GHz. BAT14-077D Silicon-based dual Schottky diode for millimeter wave receive mixer applications, 12 dB conversion loss, low 1/f corner frequency, very low noise. ACC_DRO15.1_11) Ultra-low phase noise (- 108 dB/Hz @ 100 kHz) dielectric resonator oscillator (DRO) module as stable frequency reference with excellent short-term and long-term stability. Pre-tuned to 15.1 GHz. ACC_PLL_11) Phase locked loop (PLL) module for the generation of ultra-linear frequency sweeps in FMCW radar systems. Typical deviation from a 200 MHz RF sweep at 76.5 GHz is less than 20 kHz. Maximum sweep bandwidth: 450 MHz, modulation rate 500 GHz/s. User control by simple digital interface or by an external data generator. TriCore1) TriCore microcontroller with two fast, synchronous A/D converters. Especially suited for signal processing and sweep control. 1) Contact Infineon for more information and design support. Data Book 704 V1.0, 2001-01-01 GaAs Components T625_VCO2_W Application Note: Biasing of Infineon PHEMT-Based Car Radar MMICs Infineon car radar MMICs provide on-chip blocking capacitors, capable to reduce bias oscillations down to 1 GHz. For save operation below 1 GHz, a bypass capacitor of 470 to 330 pF should be connected from each MMIC gate terminal to an on-chip ground pad. The capacitor should have low ESR up to 1.5 GHz. Keep leads as short as possible. Drain Terminal Gate Terminal VG VD External Bypass - Cap 330-470 pF Recommended EHT09247 Figure 4 DC-Blocking of drain terminals is normally not necessary and might lead to bias oscillations induced by feedback via common ground lead inductance. Combination of drain and gate terminals should be done by series resistors of 5 to 10 . To compensate for temperature effects, an active bias controller with positive temperature coefficient (e.g. Infineon BCR 400W) can be used. Data Book 705 V1.0, 2001-01-01 77 GHz MPA for Car Radar Systems T626_MPA2_W Preliminary Data Sheet * * * * Operating Frequency: 76 - 77 GHz Output Power: + 13 dBm Input and Output matched to 50 Application in Car Radar Systems ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Package T626_MPA2_W - Q62702-G173 Chip The T626_MPA2_W is a millimeter wave, medium power amplifier, suitable for signal amplification in modern, MMIC-based car radar systems. It might be used as small signal amplifier or as output stage. The MMIC will be delivered with wirebond compatible pads. To ease substrate design, the MMIC's layout can be provided in dxf- or gds2-format. Circuit Description The T626_MPA2_W incorporates a two-stage, PHEMT - based millimeter wave amplifier. Both input and output are matched to 50 . The T626_MPA2_W is optimized for mounting on a metal plate, different performance might be expected using flip-chip mounting. The MPA delivers at least 13 dBm of RF output power with 3 dB compression. The small-signal gain is 8 dB. Over a temperature range of Tamb = - 40 to + 95 C, the output power variation is less than 3 dB without DC bias compensation. Data Book 706 V1.0, 2001-01-01 GaAs Components T626_MPA2_W 1 8 IN MPA 76 Infineon G T626A11 D WE 2 Figure 1 G D 3 4 5 6 7 OUT 2 EHT09245 Pin Configuration Pin Configuration Pad Symbol Function 1 RF IN Coplanar RF Input, Matched to 50 Typically 46 m RF Signal Pad Width, 37 m Gap to GND Pads RF Probing: Use 100 to 120 m Ground - Signal - Ground Pitch 2 VG1 Gate Voltage 1st PHEMT Amplifier Stage 3 GND Chip DC Ground 4 VD1 Drain Voltage 1st PHEMT Amplifier Stage 5 VG2 Gate Voltage 2nd PHEMT Amplifier Stage 6 GND Chip DC Ground 7 VD2 Drain Voltage 2nd PHEMT Amplifier Stage 8 RF OUT Coplanar RF Output, Matched to 50 Typically 46 m RF Signal Pad Width, 37 m Gap to GND Pads RF Probing: Use 100 to 120 m Ground - Signal - Ground Pitch The bias pads (2 - 7) have 150 m pitch. Data Book 707 V1.0, 2001-01-01 GaAs Components T626_MPA2_W Characteristic - General and DC Parameter Symbol Typ. Value Unit Ambient Temperature1) Tamb - 40 to + 105 C Drain Supply Voltage, 1st Stage VD1 3.4 V Gate Supply Voltage, 1st Stage VG1 0.2 V Drain Supply Current, 1st Stage ID1 40 mA Drain Supply Voltage, 2nd Stage VD2 3.6 V Gate Supply Voltage, 2nd Stage VG2 0.2 V Drain Supply Current, 2nd Stage ID2 60 mA Parameter1) Symbol Typ. Value Unit Operation frequency f0 76 to 77 GHz RF Output Power, 1 dB compression POUT-1dB 11 dBm RF Output Power, 3 dB compression POUT-3dB 13 dBm RF Output Power, saturation PSAT 13.5 dBm Small Signal Gain (PIN = - 10 dBm) GS 8 dB Large Signal Gain (PIN = + 6 dBm) GS 6.5 dB Isolation with both stages VD = 0 Ai > 30 dB 1) Chip's backside mounted on a metal heatsink. Characteristic - RF 1) The given parameters assume 50 RF load impedance and an ambient temperature of Tamb = 25 C. The chip's backside is mounted on a metal plate. Chip thickness is 100 m. The T626_MPA2_W is intended for wire bonding only. Flip chip mounting with stud bumps might lead to different performance. Data Book 708 V1.0, 2001-01-01 GaAs Components T626_MPA2_W Geometry Parameter Symbol Typ. Value Unit Chip Thickness dChip 100 m Chip Outline AChip 1.68 x 0.89 mm2 Bond Pad Size DC ABondpadDC 100 x 100 m2 Bond Pad Pitch DC DC Pitch 150 m Bond Pad Size RF ABondpadRF 50 x 50 m2 Bond Pad Pitch RF1) CPW Pitch 120 m 1) RF Probing: Use G-S-G Probes with 100 to 120 m Pitch. Recommended Bonding Conditions Parameter Thermal Compression1) Wedge Bonding Unit Chuck Temp. 250 250 C Tool Temp. 180 150 C Scrub 100 - Hz Bond Force 50 25 g Wire Diameter 25 17 m Bond Pull Test (1) 2.52) g Bond Pull Test (2) 3.12) g Bond Pull Test (3) 3.22) g Bond Pull Test (4) 3.02) g Bond Pull Test (5) 2.82) g 1) 2) Nailhead, no ultrasonic See Mil 883, > 2 g Data Book 709 V1.0, 2001-01-01 GaAs Components T626_MPA2_W Application Note: Infineon Semiconductors in Modern ACC Radar Systems Infineon provides a variety of car radar products to simplify the design of modern, MMICbased car radar systems: 77 GHz VCO T625_VCO2_W VTune 77 GHz Amplifiers 2 x T626_MPA2_W RF Transceive Mixer 2 x BAT14-077D Antenna +14 dBm RF Infineon PLL Module ACC_PLL_1 IF 1 GHz 5th Harmonic Mixer BAT14-077D LO 15.1 GHz IF 1-100 kHz typ. Sweep Control Low Noise Ref. Oscillator ACC_DRO15.1_1 IF Processing and Sweep Control: Infineon TriCore TM DSP-Controller EHT09246 Figure 2 Data Book Principle of a Modern one-beam, MMIC-based FMCW Radar System 710 V1.0, 2001-01-01 GaAs Components T626_MPA2_W T625_VCO2_W PHEMT-based 76 - 77 GHz, two-stage voltage controlled oscillator (VCO) GaAs MMIC with + 5 dBm output power. T626_MPA2_W PHEMT-based 76 - 77 GHz, two-stage medium power amplifier (MPA) with max. + 13.5 dBm RF output power and 10 dB smallsignal gain at 76.5 GHz. BAT14-077D Silicon-based dual Schottky diode for millimeter wave receive mixer applications, 12 dB conversion loss, low 1/f corner frequency, very low noise. ACC_DRO15.1_11) Ultra-low phase noise (- 108 dB/Hz @ 100 kHz) dielectric resonator oscillator (DRO) module as stable frequency reference with excellent short-term and long-term stability. Pre-tuned to 15.1 GHz. ACC_PLL_11) Phase locked loop (PLL) module for the generation of ultra-linear frequency sweeps in FMCW radar systems. Typical deviation from a 200 MHz RF sweep at 76.5 GHz is less than 20 kHz. Maximum sweep bandwidth: 450 MHz, modulation rate 500 GHz/s. User control by simple digital interface or by an external data generator. TriCore1) TriCore microcontroller with two fast, synchronous A/D converters. Especially suited for signal processing and sweep control. 1) Contact Infineon for more information and design support. Data Book 711 V1.0, 2001-01-01 GaAs Components T626_MPA2_W Application Note: Biasing of Infineon PHEMT-Based Car Radar MMICs Infineon car radar MMICs provide on-chip blocking capacitors, capable to reduce bias oscillations down to 1 GHz. For save operation below 1 GHz, a bypass capacitor of 470 to 330 pF should be connected from each MMIC gate terminal to an on-chip ground pad. The capacitor should have low ESR up to 1.5 GHz. Keep leads as short as possible. Drain Terminal Gate Terminal VG VD External Bypass - Cap 330-470 pF Recommended EHT09247 Figure 3 DC-Blocking of drain terminals is normally not necessary and might lead to bias oscillations induced by feedback via common ground lead inductance. Combination of drain and gate terminals should be done by series resistors of 5 to 10 . To compensate for temperature effects, an active bias controller with positive temperature coefficient (e.g. Infineon BCR 400W) can be used. Data Book 712 V1.0, 2001-01-01 I nt r o d u c t i o n a n d T y p e O v e r v i e w HiR el D i s c r e t es a n d M i c ro w a v e S e mic o n d u c to r s J a n . 20 0 1 GaAs Components HiRel Discretes and Microwave Semiconductors 11 HiRel Discretes and Microwave Semiconductors Table of Contents Title Component Types Package Types Page 11.1 Preliminary Remarks 716 11.2 Introduction to HiRel and Space Qualified Devices 716 11.2.1 General 716 11.2.2 Silicon Devices 717 11.2.3 GaAs Devices 717 11.3 719 Quality Specifications of HiRel Components 11.3.1 Overview on Available HiRel Quality Levels 719 11.3.2 Wafer Release 720 11.3.3 HiRel Quality Levels 722 11.4 Professional Quality Level 722 High Rel Quality Level 723 Space Quality Level 724 ESA Space Quality Level 725 Selection Guides of HiRel Discrete Microwave Semiconductors 725 11.4.1 HiRel Silicon Diodes 726 General Purpose Silicon Schottky Diodes BAS 40, 70 726 Silicon PIN Diodes BXY 42, 43, 44 726 11.4.2 HiRel Silicon Bipolar Transistors 727 Conventional Silicon Bipolar Microwave Transistors BFY 180, 280, 181, 182, 183, 193, 196 727 SIEGETa Silicon Bipolar Microwave Transistors BFY 405, 420, 450 727 Data Book 714 V1.0, 2001-01-01 GaAs Components HiRel Discretes and Microwave Semiconductors Table of Contents (cont'd) Title Component Types Package Types 11.4.3 HiRel GaAs Microwave Devices 11.5 Page 728 Low Noise/General Purpose GaAs Microwave C/Ku-Band MESFETs CFY 25, 27 728 Super Low Noise GaAs Microwave X/KBand HEMTs CFY 67 728 Power GaAs Microwave C-Band MESFETs CLY 29, 32, 35, 38 729 Power GaAs Microwave X-Band MESFETs CLY 27, 30, 32, 34 730 General Purpose MMIC in MESFETs Technology CGY 41 730 Package Outlines 731 11.5.1 Package Outlines of Diode Packages FP, HPAC140, P1, T, T1, T2 731 11.5.2 Package Outlines of Transistor Packages Micro-X, Micro-X1, MWP-25, MWP-35 735 Data Book 715 V1.0, 2001-01-01 GaAs Components HiRel Discretes and Microwave Semiconductors 11.1 Preliminary Remarks This Paragraph gives an overview on the HiRel Small Signal Microwave Semiconductors available from Infineon. Full data sheets are also given in our HiRel Discrete and Microwave Semiconductors Data Book which is currently under generation (August 1998). They are further available from our WWW-Pages, together with more specific informations: - HiRel Discrete and Microwave Semiconductors: http://www.infineon.com/cgi/ecrm.dll/ecrm/scripts/prod_ov.jsp?oid=16149&cat_oid=8154 For detailed descriptions, screening procedures and quality specifications as well as available Infineon Technologies or ESA/SCC Detail Specifications please contact also our Marketing Division (contact address as given on the Cover Page). HiRel components are mainly provided for highly professional application like radio links, military applications, sea cables, naval, air and space-borne systems. The philosophy concentrates on devices of highest reliability assembled in hermetically sealed packages. Screening procedures and quality assurance tests form a dominant part of the procurement procedures. Ordered quantities are very often for a single project or application only and thus comparatively low. 11.2 Introduction to HiRel and Space Qualified Devices 11.2.1 General Infineon Technologies Small Signal Semiconductors is an important supplier of discrete semiconductor devices for the microwave community. The device families include Silicon and GaAs electronic devices. In Silicon, microwave diodes (PIN and Schottky) and bipolar transistors are available. In GaAs, low noise HEMTs and low noise as well as power MESFETs and corresponding monolithic microwave integrated circuits (MMICs) are commercialized. Contrary to the high volume markets where low cost plastic packages are used, the semiconductor dies are assembled in hermetically sealed packages to give HiRel standard products for professional applications. It should be stressed, however, that also these HiRel components take full advantage of the mass production of wafers for the consumer and commercial markets. The wafers are selected from the best controlled volume production and have to pass special additional acceptance tests. For dedicated customers also naked dies are available from these specially approved and reserved wafers. Based on their proven reliability, the components described herein are best suited for use in high reliability projects, e.g. for space applications. The following sections on Silicon and on GaAs devices report our experience in HiRel parts and outline the range of components actually available in space quality (ESA/SCC qualified) from the Infineon Data Book 716 V1.0, 2001-01-01 GaAs Components HiRel Discretes and Microwave Semiconductors Technologies Small Signal Semiconductors Group. Both wafer fabs and the HiRel assembly line are ISO9001 qualified. The Infineon Technologies Semiconductor Group received the QS9000 Certificate in 12-1997, and wafer production and HiRel assembly lines are approved ISO9001. Numerous audits have been performed by high rel customers and organizations. The last audit by official authorities in this respect was performed by the German and European space agencies, DARA and ESA, respectively, in the frame of the BFY 193/ BFY 450 space evaluation program in May, 1995. 11.2.2 Silicon Devices Infineon Technologies has a long history in manufacturing high reliability discrete semiconductor devices. Fundamental engineering work on a 1st generation of Si bipolar transistors was performed already in the sixties and early seventies. Based on extensive and numerous reliability investigations the ESA/SCC qualification status was granted to some Si component families, actually the PIN-diodes BXY 42, 43 and 44, and the Schottky diodes BAS 70 and BAS 40 are ESA/SCC space qualified in their different package variants. The microwave bipolar junction transistors (BJT) of our 3rd generation headed by the BFY 193 passed the ambitious ESA evaluation and qualification programs and received full ESA qualification (June 1996), this family is completed by the larger type variant BFY 196 (ESA/SCC qualification running). Also, the new SIEGET microwave transistors, our 4th generation with it's largest type variant, the BFY 450, passed the ESA/SCC qualification program recently (June 1997). Si microwave devices, diodes as well as bipolar transistors, have been used in numerous space projects. 11.2.3 GaAs Devices In compound semiconductor research Infineon Technologies has a background of more than 45 years. The activities range from material growth, technology development through devices to circuits including monolithic microwave integrated circuits (MMICs) and systems applications of new components. There are two main aspects driving these GaAs activities: The first is to have this "high technology" available inhouse for current and future enhanced systems. The second is to commercialize GaAs products as a supplement to the Si semiconductor program. As a result, the company is engaged in the most important application fields including especially low noise HEMTs and power FET devices for microwave applications, discretes as well as MMICs, and has also ESA/SCC qualified GaAs devices in it's delivery program. In 1989 the GaAs Wafer Fab Line achieved a formal quality release to internal standards, followed later by certifications according CECC 20 000/ CECC 50 000 covering EN 29 001 (ISO 9001). Data Book 717 V1.0, 2001-01-01 GaAs Components HiRel Discretes and Microwave Semiconductors The history of the GaAs wafer production line started in 1980 with the fabrication of discrete low noise and general purpose GaAs FETs for the open market. The world first commercially available GaAs MMICs were released in 1982. A very important milestone was the invention of the Infineon Technologies specific, proprietary self-aligned gate process called GaAs DIOM technology. The process exhibits exceptional device uniformity and reliability, it was released in 1984. First DIOM-MMICs (CGY 40, CGY 31) were marketed according MIL883 quality already in 1986. Development of GaAs power devices at the Semiconductor Group started in 1987 after taking over corresponding responsibilities from MSC, a former Infineon Technologies company. Already in 1992 the production of corresponding high reliability Phased Array Radar MMICs (LNA, VGA, MPA, HPA) started. The same technology is also used for large volume commercial power FETs in low cost plastic packages introduced in 1993. Using similar chips in hermetically sealed packages gives high rel devices for the professional market, proven through the ESA/SCC evaluation program successfully completed in 1995. Regarding low noise devices an important milestone was the introduction of a self aligned HEMT process. GaAs LN-HEMT marketing started in 1989. A Space Evaluation and Qualification Program to ESA / SCC specifications was completed on the HEMT types CFY 66 and CFY 67 under DARA and ESA contracts in 1994, with the Infineon Technologies HEMTs becoming the first ever space qualified HEMTs. First flight parts have been delivered to the Artemis project, and the naked dies are chosen as the base line for the LNA of the ASAR / Envisat project. The long and successful history of DIOM Power FETs and MMICs at Infineon Technologies on commercial devices and project work shall be explained in more detail. The large volume production of P-FETs and P-MMICs for mobile communication (DECT, GSM, PCN) is based on surface mountable devices in low cost plastic packages and has brought Infineon Technologies to become the largest commercial supplier of GaAs devices in Europe. Most of the devices are power MESFETs or MMICs with large gate width structures, and the process maturity is best proved by these figures. Similar P-FET dies in hermetically sealed packages give a power line-up for professional applications up to 5 GHz (CLY 29, 32, 35, 38). Based on the mass production of the dies and the huge amount of available corresponding internal reliability data, an ESA/SCC Space Evaluation and Qualification Program was started under DARA and ESA contracts leading to the ESA/SCC space qualification of the CLY 32 as the pilot type in November, 1997, the qualification of the larger Power-FETs is running. First flight parts have been delivered to the Spot / Vegetation and Meteosat Second Generation projects. Power MMIC developments include activities for an S-band Radar project (high power amplifier HPA-MMICs), the C-band COBRA PAR system (among others driver or medium power amplifier MPA-MMICs and HPA-MMICs), and work on X-band SAR systems (HPA-MMICs). The MPA-MMIC die developed and delivered for a C-band Phased Array Radar is also selected as the base line for the driver die of the ASAR / Data Book 718 V1.0, 2001-01-01 GaAs Components HiRel Discretes and Microwave Semiconductors Envisat project, the corresponding VGA is under discussion for this challenging instrument. The results of an X-band HPA with POUT = 5.6 W and PAE = 33% are exceptional and world-wide recognised. Some of the recent developments were embedded in the FRG Government "Drei-Funf Elektronik" consortial program. In respect to power devices Infineon Technologies was also engaged in the ESPRIT program "MANPOWER" and in the IEPG group. Regarding space applications Infineon Technologies was also engaged as subcontractor in the ESA program "Evaluation of New Microwave Power Transistors" with P-FETs. The project work at Infineon Technologies is used as an vehicle to create devices for the commercial and professional market. Developments of new X-Band Power-FETs under ESA contracts aim at the creation of so-called high power prematched FETs not only for space, but also for other professional applications. 11.3 Quality Specifications of HiRel Components 11.3.1 Overview on Available HiRel Quality Levels The quality philosophy of our production for the commercial market is treated in detail in the paragraph on general quality in our Small Signal Semiconductors data books. The quality assurance of our HiRel devices is relying heavily on this basic quality system. In addition special measures are taken to assure the higher quality levels of our HiRel products. First of all, wafers are selected from the normal production runs and are exposed to a specific release procedure. The semiconductor dies are then assembled in hermetically sealed microwave packages and tested. These components are available in four well defined upgrading quality levels, compare also Table 1 for a direct comparison of these levels: For the Professional Quality Level the components pass basic mechanical, thermal and electrical tests and inspections and are fully DC/RF tested. This quality level gives the same electrical performance as the other levels, correspondent devices may be used e.g. for engineering work. The High Rel Quality Level provides extended tests and additionally a 100% Burn-In (screening) The testing procedure secures full tracebility and is explicitely certified for each delivery lot by the corresponding "Certificate of Compliance" CoC. This level may be used in professional equipment. The Space Quality Level provides further extended tests, partly a Pre Burn-In, a multiple 100% Burn-In screening on serialized devices and a temperature characterisation. Final electrical measurements are given on a read and record base. The testing procedure is again explicitely certified for each delivery lot by a CoC. Lot Acceptance Tests to different levels will be performed, if ordered. This level will be used especially in commercial spacecraft systems. Data Book 719 V1.0, 2001-01-01 GaAs Components HiRel Discretes and Microwave Semiconductors The ESA Space Quality Level follows the testing procedures specified in the ESA/SCC Generic Specification 5010 and in the corresponding Detail Specifications. They provide again further extended tests, partly a Pre Burn-In and multiple 100% Burn-In on serialized devices including an individual drift evaluation, a temperature characterisation and final electrical measurements. Full ESA specified data documentation is provided including all measurements on a read and record base. The testing procedure is again explicitely certified for each delivery lot by a CoC. Lot Acceptance Tests to different levels will be performed, if ordered. This level will be used especially in spacecraft systems supervised by ESA and corresponding agencies. Table 1 HiRel Small Signal Semiconductors Quality Levels: Test Programs Quality Level Wafer Mech. Read & 100% Release Insp. Record DC/RF1) 100% Burn-In Temp. LAT Docum. 2) 2) Burn-In Drift Charact. Profi Profi + - + - - - - - High Rel High Rel + - + + - - - CoC Space Space + + + + multiple + + + CoC & Final Data ESA ESA + + + + multiple + + + CoC & Full Doc. 1) RF for naked dies partly on a sample base only. 2) Burn-In may not be possible for naked dies. 11.3.2 Wafer Release The wafers are processed and inspected including quality inspections according to the Process Identification Document P.I.D.. Full documentation of all process steps and inspection is stored. Wafers meant for HiRel devices are then selected and exposed to a specific release procedure, including pilot run assembling and endurance testing. The generic wafer process and release flow for HiRel devices is given in Figure 1. Specific upgrades and limits are used for the different quality levels. Data Book 720 V1.0, 2001-01-01 GaAs Components HiRel Discretes and Microwave Semiconductors 1 Wafer Process and Inspections according P.I.D. 1.1 Wafer Process and Inspections 1.2 Electrical Measurements 100% 1.3 Dicing and Visual Inspection Diced Wafer 2 Review of Process Data 2.1 SPC Analysis 2.2 PCM Analysis 2.3 Review of 100% Electrical Measurements 2.4 Review of Inspections Initial Wafer Release 3 Wafer Acceptance Test 3.1 SEM Inspection 3.2 Pilot Run Assembling and Tests Die Visual Inspection and Selection Die Attach Wire Bonding Internal Visual Inspection Bond Pull / Die Shear Test Encapsulation Thermal Shock Fine Leak and Gross Leak Seal Test External Visual Inspection 3.3 Pilot Run Electrical Characterization Serialization Electrical Measurements at Room Temperature Electrical Measurements at High and Low Temperatures 3.4 Endurance Test (Quality Level "High Rel" and higher) High Temperature Bias Endurance Test (min 1000 h at Tjmax or 168 h at Tjmax + 25 C) Electrical Measurements after Endurance Test Parameter Drift Evaluation Bond Pull / Die Shear Test 3.5 Check Periodic Reliability Monitor Final Wafer Release EHT09092 Figure 1 Data Book Generic Wafer Process and Release Flow for HiRel Small Signal Semiconductors 721 V1.0, 2001-01-01 GaAs Components HiRel Discretes and Microwave Semiconductors 11.3.3 HiRel Quality Levels The flow charts for production, inspections and testing of the four standard HiRel quality levels are given in Figure 2 - Figure 5. As can be seen, the quality levels provide successively higher degrees of testing, screening and documentation, thus providing the increased reliability assurance needed for the different applications. The sub-paragraphs use the same No. for quick reference. Full traceabilty of a delivery lot to an assembly lot and the specific semiconductor wafers used is secured for the High Rel Quality Level and the further upgrades. Diced Wafer Released for Professional Quality Level 1 Assembling 1.1 Die Selection 1.2 Die Mounting 1.3 Wire Bonding 1.4 Internal Visual Inspection 1.5 Bond Strength Test (Sample) 1.6 Die Shear Test (Sample) 1.7 Encapsulation 1.8 High Temperature Stabilization Bake 1.9 External Visual Inspection 1.10 Review of Assembling Release for Final Production Tests 2 Final Production Tests 2.6 Fine Leak and Gross Leak Seal Test 2.8 Full Electrical Measurements at Room Temperature 2.9 Marking External Visual Inspection 2.11 Review of Final Production Tests Delivery EHT09093 Figure 2 Data Book Assembling and Testing Flow of Professional Quality Level 722 V1.0, 2001-01-01 GaAs Components HiRel Discretes and Microwave Semiconductors Diced Wafer Released for High Rel Quality Level 1 Assembling 1.1 Die Selection 1.2 Die Mounting 1.3 Wire Bonding 1.4 Internal Visual Inspection 1.5 Bond Strength Test (Sample) 1.6 Die Shear Test (Sample) 1.7 Encapsulation 1.8 High Temperature Stabilization Bake 1.9 External Visual Inspection 1.10 Review of Assembling Release for Final Production Tests 2 Final Production Tests 2.2 Thermal Shock 2.5 Particle Impact Noise Detection Test PIND 2.6 Fine Leak and Gross Leak Seal Test Full Electrical Measurements at Room Temperature 2.8 2.9 Marking 2.11 Review of Final Production Tests Release for Burn-In 3 Burn-In and Electrical Measurements 3.1 High Temperature Reverse Bias or Power Burn-In 3.6 Full Electrical Measurements at Room Temperature 3.7 Fine Leak and Gross Leak Seal Test 3.8 External Visual Inspection 3.9 Review of Burn-In and Measurements / Check for Lot Acceptance 3.12 Certificate of Compliance Delivery EHT09094 Figure 3 Assembling and Testing Flow of High Rel Quality Level Data Book 723 V1.0, 2001-01-01 GaAs Components HiRel Discretes and Microwave Semiconductors Diced Wafer Released for Space Quality Level 1 Assembling 1.1 Die Selection 1.2 Die Mounting 1.3 Wire Bonding 1.4 Internal Visual Inspection 1.5 Bond Strength Test (Sample) 1.6 Die Shear Test (Sample) 1.7 Encapsulation 1.8 High Temperature Stabilization Bake 1.9 External Visual Inspection 1.10 Review of Assembling Release for Final Production Tests 2 Final Production Tests 2.2 Thermal Shock 2.3 Constant Acceleration (for large components only) Vibration (for large components only) 2.4 2.5 Particle Impact Noise Detection Test PIND 2.6 Fine Leak and Gross Leak Seal Test Electrical Measurements and Pre Burn-In (if specified) 2.7 Full Electrical Measurements at Room Temperature 2.8 2.9 Marking, Serialization 2.11 Review of Final Production Tests Release for Burn-In 3 Burn-In and Electrical Measurements 3.1 High Temperature Reverse Bias 3.2 Power Burn-In 1 and Parameter Drift / PDA Evaluation 3.4 Electrical Measurements at High and Low Temperature 3.5 Radiographic Inspection (if specified) Full Electrical Measurements at Room Temperature 3.6 Fine Leak and Gross Leak Seal Test 3.7 3.8 External Visual Inspection Review of Burn-In and Measurements / Check for Lot Acceptance 3.9 3.10 Perform Lot Acceptance Tests (if ordered) 3.11 Prepare Data Package (Final Electrical Measurements Results) 3.12 Certificate of Compliance Delivery EHT09095 Figure 4 Data Book Assembling and Testing Flow of Space Quality Level 724 V1.0, 2001-01-01 GaAs Components HiRel Discretes and Microwave Semiconductors Diced Wafer Released for ESA Space Quality Level 1 Assembling 1.1 Die Selection 1.2 Die Mounting 1.3 Wire Bonding 1.4 Internal Visual Inspection / Customer Inspection 1.5 Bond Strength Test (Sample) 1.6 Die Shear Test (Sample) 1.7 Encapsulation 1.8 High Temperature Stabilization Bake 1.9 External Visual Inspection 1.10 Review of Assembling Release for Final Production Tests 2 Final Production Tests 2.1 Electrical Measurements Go/Nogo 2.2 Thermal Shock 2.3 Constant Acceleration (for large components only) Vibration (for large components only) 2.4 2.5 Particle Impact Noise Detection Test PIND 2.6 Fine Leak and Gross Leak Seal Test 2.7 Electrical Measurements and Pre Burn-In (if specified) 2.8 Full Electrical Measurements at Room Temperature 2.9 Marking, Serialization 2.10 Dimension Check 2.11 Review of Final Production Tests Release for Burn-In 3 Burn-In and Electrical Measurements 3.1 High Temperature Reverse Bias and Parameter Drift / PDA Evaluation 3.2 Power Burn-In 1 and Parameter Drift / PDA Evaluation 3.3 Power Burn-In 2 and Parameter Drift / PDA Evaluation 3.4 Electrical Measurements at High and Low Temperatures 3.5 Radiographic Inspection (if specified) Full Electrical Measurements at Room Temperature 3.6 Fine Leak and Gross Leak Seal Test 3.7 3.8 External Visual Inspection 3.9 Review of Burn-In and Measurements / Check for Lot Acceptance 3.10 Perform Lot Acceptance Tests (if ordered) 3.11 Prepare Full ESA Data Package 3.12 Certificate of Compliance Delivery EHT09096 Figure 5 11.4 Assembling and Testing Flow of ESA Space Quality Level Selection Guides of HiRel Discrete Microwave Semiconductors The Selection Guide provides main maximum ratings and electrical key parameters (typical data). Data Book 725 V1.0, 2001-01-01 GaAs Components HiRel Discretes and Microwave Semiconductors 11.4.1 Table 2 HiRel Silicon Diodes General Purpose Silicon Schottky Diodes (Tj,max = 150 C) Max. Ratings Component type variant BAS 40-T1 VR IF Characteristics VBR VF Package RF CD Detail Spec. Type Variant No. (1 mA) (10/15 mA) (0 V) pF > 40 0.330 (@ - 10 A) 9.0 3.0 T1 > 70 (@ - 2 A) 30 1.4 T1 5512/020-01 HPAC140 5512/020-02 V mA V 40 120 70 BAS 70-T1 70 BAS 70B-HP (bridge quad) ESA/SCC V 0.380 5512/020-03 The BAS 70 is ESA/SCC space qualified with all type variants, the space qualification exercise of the BAS 40 is running (qualification expected 1998). Table 3 Silicon PIN Diodes (Tj,max = 175 C) Max. Ratings Component type variant VR Ptot Characteristics CT Package ESA/SCC VBR RF t (10 mA) (- 50 V) (If/r = + 10/ - 6 mA) pF ns Detail Spec. Type Variant No. V mW V 50 350 600 > 50 (@ - 10 A) 1.0 0.22 (20 V) 50 T1 T 5513/017-01 5513/017-02 BXY 43-T 150 BXY 43-T1 BXY 43-P1 BXY 43-FP (single diode) BXY 43P-FP (matched pair) 500 > 150 (@ - 0.1 A) 0.9 0.30 0.30 0.50 0.60 650 T T1 P1 FP 5513/030-01 5513/030-02 5513/030-03 t.b.d. FP 5513/030-04 BXY 44-T 200 BXY 44-T1 BXY 44-T2 BXY 44-FP (single diode) BXY 44P-FP (matched pair) 500 T T1 T2 FP 5513/030-05 5513/030-06 5513/030-07 t.b.d. FP 5513/030-08 BXY42-T1 BXY42-T 0.60 > 200 (@ - 0.1 A) 3.0 3.0 3.0 3.8 0.20 0.20 0.20 0.50 3.8 0.50 800 The BXY 42, BXY 43 and BXY 44 are ESA/SCC space qualified with most type variants. Data Book 726 V1.0, 2001-01-01 GaAs Components HiRel Discretes and Microwave Semiconductors 11.4.2 HiRel Silicon Bipolar Transistors Conventional Silicon Bipolar Microwave Transistors (Tj,max = 200 C) Table 4 Type Max. Ratings VCE0 IC Ptot Characteristics (typical data) Package RthJS fT NF Gma/ms POUT max (500 MHz, 5 V) (2 GHz, 5 V) (2 GHz, 5 V) (2 GHz, 5 V) ESA/SCC Detail Spec. -Type Variant No. mA mW K/W GHz dB dB dBm BFY 180 8 4 30 805 6.5 2.6 13.5 - Micro-X1 5611/006-01 BFY 280 8 10 80 450 7.2 2.2 14.0 - Micro-X1 5611/006-02 BFY 181 12 20 175 360 7.5 2.2 14.5 - Micro-X1 5611/006-03 BFY 182 12 35 250 255 7.5 2.4 14.5 - Micro-X1 5611/006-04 BFY 183 12 65 450 225 7.5 2.3 14.0 14.5 Micro-X1 5611/006-05 BFY 193 12 80 580 165 7.5 2.3 13.5 17.5 Micro-X1 5611/006-06 BFY 196 12 100 700 135 6.5 3.0 11.0 19.5 Micro-X1 5611/006-07 V The BFY 193 family is ESA/SCC space qualified with all type variants except the BFY 196, whose exercise is running (qualification expected 1998). SIEGETa Silicon Bipolar Microwave Transistors (Tj,max = 175 C) Table 5 Type Max. Ratings VCE0 IC Ptot Characteristics (typical data) Gma/ms Package RthJS max fT NF (2 GHz, 3 V) (1.8 GHz, (1.8 GHz, (1.8 GHz, 2 V) 2 V) 2 V) POUT ESA/SCC Detail Spec. -Type Variant No. mA mW K/W GHz dB dB dBm BFY 405 4.5 12 55 545 22 1.15 23 5 Micro-X 5611/008-01 BFY 420 4.5 35 160 285 22 1.10 21 12 Micro-X 5611/008-02 BFY 450 4.5 100 450 145 22 1.25 (@ 1 GHz) 16 19 (@ 3 V) Micro-X 5611/008-03 V The BFY 450 family is ESA/SCC space qualified with all type variants. Data Book 727 V1.0, 2001-01-01 GaAs Components HiRel Discretes and Microwave Semiconductors 11.4.3 HiRel GaAs Microwave Devices Table 6 Low Noise/General Purpose GaAs Microwave C/Ku-Band MESFETs (Tj,max = 175 C) Type Max. Ratings VDS VDG ID Characteristics (typical data) Ptot RthJS max NF Ga Package ESA/SCC P 1db Detail Spec. Type Variant No. (12 GHz) (12 GHz) (12 GHz) V V mA mW K/W GHz dB dBm 5 7 80 250 410 2.3 8.7 - CFY 25-20 2.0 9.0 - 5613/008-02 CFY 25-P - - 15 5613/008-01 CFY 25-23P 2.3 8.7 15 5613/008-05 CFY 25-20P 2.0 9.0 15 5613/008-03 3.5 8.0 - - - 26 CFY 25-23 CFY 27-38 9 11 420 900 150 CFY 27-P Micro-X Micro-X 5613/008-04 5613/008-06 (t.b.c.) 5613/008-07 (t.b.c.) The CFY 25 space qualification exercise is running (qualification expected 1998), Detail Spec. No. t.b.c. The CFY 27 is a component under development, performance to be confirmed. Table 7 Super Low Noise GaAs Microwave X/K-Band HEMTs (Tj,max = 150 C) Type Max. Ratings VDS VDG ID Characteristics (typical data) Ptot RthJS max NF Ga POUT (12 GHz) (12 GHz) (12 GHz) Package ESA/SCC Detail Spec. -Type Variant No. V V mA mW K/W GHz dB dBm 3.5 4.5 60 200 515 0.9 11.0 - CFY 67-10P 0.9 11.0 11.0 5613/004-04 CFY 67-08 0.7 11.5 - 5613/004-01 CFY 67-08P 0.7 11.5 11.0 5613/004-03 CFY 67-06* 0.5 12.5 - 5613/004-05 (t.b.c.) CFY 67-10 Micro-X 5613/004-02 The CFY 67 are ESA/SCC space qualified with most type variants. Data Book 728 V1.0, 2001-01-01 GaAs Components HiRel Discretes and Microwave Semiconductors Table 8 Power GaAs Microwave C-Band MESFETs (Tj,max = 175 C) Type Max. Ratings VDS VDG CLY 29-00 ID Characteristics (typical data) Ptot RthJS Glp POUT/P-1dB PAE max (2.3 GHz) (2.3 GHz) (2.3 GHz) mA W K/W dB dBm % 14 16 700 3.55 32 (38) 15 28.8 50 15.2 29.3 52 5614/006-05 15.2 30 55 5614/006-04 12 31.8 47 12.5 32.3 50 5614/006-02 12.5 33 53 5614/006-01 11.0 34.8 47 11.2 35.3 50 5614/008-05 11.2 35.8 53 5614/008-04 11.0 37.8 47 11.2 38.3 50 5614/008-02 11.2 38.8 53 5614/008-01 14 16 CLY 32-05 1400 6.75 16 (20) CLY 32-10 14 16 2800 18 CLY 35-05 6.8 (7.5) CLY 35-10 CLY 38-00 CLY 38-05 CLY 38-10 Detail Spec. Type Variant No. (t.b.c.) V CLY 29-10 CLY 35-00 ESA/SCC V CLY 29-05 CLY 32-00 Package 14 16 5600 30 3.8 (4.5) MWP-25 MWP-25 MWP-35 MWP-35 5614/006-06 5614/006-03 5614/008-06 5614/008-03 The CLY 32 is ESA/SCC space qualified as the pilot type, the CLY 29, CLY 35 and CLY 38 qualification exercise is running (qualification expected 1998). Data Book 729 V1.0, 2001-01-01 GaAs Components HiRel Discretes and Microwave Semiconductors Table 9 Power GaAs Microwave X-Band MESFETs (Tj,max = 175 C) Type Max. Ratings VDS VDG ID CLK 27-00 Characteristics (typical data) Ptot Glp POUT/P- 1dB PAE max (2.3 GHz) (2.3 GHz) (2.3 GHz) K/W dB dBm % 18.5 26.5 50 19 27.3 53 5614/007-05 19 27.8 55 5614/007-04 17.5 29.5 48 18 30.3 52 5614/007-02 18 30.8 54 5614/007-01 16 31.5 48 MWP-25 16.5 32.3 52 t.b.c. 16.5 32.8 54 14.5 33.2 47 MWP-25 15 34 51 t.b.c. 15 34.5 53 V mA W 11 13 420 3.38 35 (40) CLK 27-10 CLK 30-00 11 13 840 5.4 CLK 30-05 20 (25) CLK 30-10 CLK 32-00 11 13 1400 5.4 CLK 32-05 20 (25) CLK 32-10 CLK 34-00 11 13 CLK 34-05 ESA/SCC RthJS V CLK 27-05 Package 2100 6.75 16 (20) CLK 34-10 Detail Spec.Type Variant No. (t.b.c.) MWP-25 MWP-25 5614/007-06 5614/007-03 t.b.d. t.b.d. The CLX 27 and CLX 30 space qualification exercises are running (Qualification expected 1998). The CLX 32 and CLX 34 are components under development, performance to be confirmed. Table 10 General Purpose MMIC in MESFET Technology (Tj,max = 175 C) Type Max. Ratings VD VG ID Characteristics Ptot RthChS G (max) CGY 41 V V mA mW K/W 5.5 - 4 ... 0 60 440 155 P- 1dB (1.8 GHz) (0.2 1.8 GHz) dB dBm 9.5 18 Package ESA/SCC Detail Spec. Type Variant No. (t.b.c.) PAE (2.3 GHz) % 50 Micro-X t.b.d. There is actually no space qualification planned for the CGY 41 but Infineon is willing to discuss it if a potential market is available. Data Book 730 V1.0, 2001-01-01 GaAs Components HiRel Discretes and Microwave Semiconductors 11.5 Package Outlines 11.5.1 Package Outlines of Diode Packages 11.5.1.1 FP Package 1.1' 1.2' Y1 X1 2 1.1 Y2 1.2 EHA07473 B max. B 3.10 3.55 B1 3.00 3.30 D 1.30 1.70 D1 0.55 0.65 d 0.10 0.15 d1 0.25 0.40 F 2.40 2.60 L 5.50 - Data Book L D 2 1.1 1.1' 1.2 1.2' F min. B1 D1 Millimeter d1 Symbol d L EHA07474 731 V1.0, 2001-01-01 GaAs Components HiRel Discretes and Microwave Semiconductors 11.5.1.2 HPAC140 Package 4 Z 3 Z X Y F 2 EHA07475 Cathode D 1 4 min. max. A 3.3 3.7 B 1.9 2.1 C 0.4 0.7 D 5.5 - E - 1.75 F 0.07 0.15 A 3 Millimeter B Symbol 1 2 D C E EHA07476 11.5.1.3 P1 Package X1 2 Y1 Y2 1 C EHA07477 Symbol B D A Millimeter min. max. A 2.0 2.2 B 3.0 3.2 C 1.45 1.7 D 0.4 0.6 1 2 Cathode EHA07478 Data Book 732 V1.0, 2001-01-01 GaAs Components HiRel Discretes and Microwave Semiconductors 11.5.1.4 T Package X1 1 Y1 2 Y2 B EHA07479 C Symbol A Millimeter min. max. A 1.30 1.45 B 1.15 1.35 C - 0.40 1 2 EHA07480 11.5.1.5 T1 Package 1 X1 2 Y1 B EHA07481 max. A 1.30 1.45 B 1.15 1.35 C - 0.40 D 0.10 0.50 E - 0.30 F 0.06 0.10 G 5.50 - H 0.40 0.60 E 1 A 2 D min. Data Book C Millimeter F Symbol Y2 G G H EHA07482 733 V1.0, 2001-01-01 GaAs Components HiRel Discretes and Microwave Semiconductors 11.5.1.6 T2 Package 2 X1 Y1 1 B EHA07483 Symbol Y2 C D A Millimeter min. max. A 1.30 1.45 B 2.0 2.2 C 0.60 1.25 D 0.08 0.20 1 2 EHA07484 Data Book 734 V1.0, 2001-01-01 GaAs Components HiRel Discretes and Microwave Semiconductors 11.5.2 Package Outlines of Transistor Packages 11.5.2.1 Micro-X Package, Micro-X1 Package 1.02 0.1 4 D G 4.2 -0.2 0.5 0.1 1.7 8 S 3 2 1.05 0.02 0.1 +0.05 -0.03 EHA07485 4.2 -0.2 0.76 1 S 1.78 o1.65 0.1 EHA07486 11.5.2.2 MWP-25 Package 1 3.2 0.5 2.5 0.2 1.6 0.1 3.2 0.5 0.6 0.1 2 8.5 0.2 0.8 0.1 0.6 0.1 3 EHA07487 2 0.2 2.5 0.2 6.1 0.1 EHA07488 Data Book 735 V1.0, 2001-01-01 GaAs Components HiRel Discretes and Microwave Semiconductors 2.2 0.5 1.8 0.1 3.3 0.2 0.5 0.05 2.2 0.5 11.5.2.3 MWP-35 Package 2 1 3.5 0.2 6.7 0.1 3 1 0.2 1.65 0.1 0.03 10 0.2 EHA07489 3.8 0.2 EHA07490 Data Book 736 V1.0, 2001-01-01 GaAs Components Alphanumeric Type Index 12 Alphanumeric Type Index GaAs RF-Transistors, MMICs and Modules Type Marking Ordering Code Package Page BGV 503 BGV 503 Q62702-L0132 P-TSSOP-10-1 170 BGV 903 BGV 903 Q62702-L0131 P-TSSOP-10-1 170 CF 739 MSs Q62702-F1215 P-SOT143-4-1 188 CF 750 MX Q62702-F1391 P-SOT143-4-1 197 CFH 120-08 H3s Q62705-K0603 MW-4 206 CFH 120-10 H4s Q62705-K0604 MW-4 206 CFH 400 N4s Q62702-G0116 P-SOT343-4-1 213 CFH 400T N4s on request P-TSFP-4 220 CFH 800 N8s on request P-SOT343-4-1 227 CFH 800T N8s on request P-TSFP-4 236 CFY 30 A2 Q62703-F97 P-SOT143-4-1 245 CFY 35-20 NA Q62702-F1393 MW-4 253 CFY 35-23 NB Q62702-F1394 MW-4 253 CGB 91 CGB 91 on request P-VQFN-24-3 258 CGB 191 CGB 191 Q62702-G0131 P-VQFN-24-3 264 CGB 240 CGB 240 Q62702-G0174 P-TSSOP-10-2 269 CGM 20G on request Q62702-G0104 C-MMA-xx-y 277 CGM 800C CGM 800C on request LTCC-Module 289 CGM 1900C CGM 1900C on request LTCC-Module 294 CGY 50 G2 Q68000-A8370 P-SOT143-4-1 299 CGY 59W Y5s Q62702 - G69 P-SOT363-6-1 306 CGY 60 Y7s Q62702-G39 MW-6 315 CGY 62 Y6s Q68000-A8797 MW-6 325 CGY 63 Y8s Q62702-G0115 SCT-595 332 CGY 96 CGY 96 Q62702-G63 MW-16 354 CGY 98 G8s Q62702-G0079 SCT-595 367 CGY 99 CGY 99 Q62702-G0128 P-TSSOP-10-2 382 CGY 121 A Y9S Q62702-G66 MW-6 392 CGY 121 B Y0S Q62702-G0071 MW-6 403 Data Book 737 V1.0, 2001-01-01 GaAs Components Alphanumeric Type Index GaAs RF-Transistors, MMICs and Modules (cont'd) Type Marking Ordering Code Package Page CGY 180 CGY 180 Q68000-A8882 MW-12 414 CGY 195 Y1S Q68000-A9198 SCT-595 431 CGY 196 D6s Q62702-G0080 SCT-598 447 CGY 197 D7s Q62702-G0116 SCT-598 471 CGY 353 CGY 353 Q62702-G82 MW-16 485 CLY 2 Y2 Q62702-L96 MW-6 491 CLY 5 CLY 5 Q62702-L90 P-SOT223-4-2 500 CLY 10 CLY 10 Q62702-L94 P-SOT223-4-2 511 CLY 15 CLY 15 Q62702-L99 P-SOT223-4-2 519 CMH 82 on request Q62705-K0607 P-VQFN-20 528 CMH 192 on request Q62705-K0608 P-VQFN-20 538 CMH 0819 on request on request P-VQFN-24-3 547 CMY 82 on request on request P-VQFN-24-3 557 CMY 91 M2 Q62702-M9 MW-6 566 CMY 191 CMY 191 Q62702-M23 P-TSSOP-10-2 580 CMY 200 M1 Q62702-M6 MW-6 588 CMY 210 M3 Q62702-M0016 MW-6 598 CMY 211 M4s Q62702-M0017 MW-6 608 CMY 212 M5s Q62702-M0026 SCT-598-8-1 615 CMY 213 M6s Q62702-M0032 SCT-598-8-1 624 CSH 210 on request on request P-SOT363-6-1 633 CSH 210P on request on request P-SOT363-6-1 638 CSH 410 on request on request P-VQFN-16-2 643 CSH 510 on request on request P-VQFN-16-2 647 CSY 210 on request on request SCT-598 653 Data Book 738 V1.0, 2001-01-01 GaAs Components Alphanumeric Type Index Microwave Semiconductors 24 - 27 GHz HPA - on request Chip 663 24 - 27 GHz Mixer - on request Chip 666 24 - 28 GHz Doubler - on request Chip 672 24 - 30 GHz LNA - on request Chip 675 24 - 32 GHz LNA - on request Chip 679 27 - 31 GHz HPA - on request Chip 683 27 - 32 GHz Mixer - on request Chip 686 27 - 33 GHz Tripler - on request Chip 690 BAT 14-077D - Q62702-D1354 FLIP CHIP 693 BAT 14-077S - Q62702-D1353 FLIP CHIP 1 696 T625_VCO2_W - Q62702-G172 Chip 699 T626_MPA2_W - Q62702-G173 Chip 706 Data Book 739 V1.0, 2001-01-01 Infineon goes for Business Excellence "Business excellence means intelligent approaches and clearly defined processes, which are both constantly under review and ultimately lead to good operating results. Better operating results and business excellence mean less idleness and wastefulness for all of us, more professional success, more accurate information, a better overview and, thereby, less frustration and more satisfaction." Dr. Ulrich Schumacher http://www.infineon.com Published by Infineon Technologies AG