PD 9.1663 IRFR/U9310 PRELIMINARY HEXFET(R) Power MOSFET l l l l l l P-Channel Surface Mount (IRFR9310) Straight Lead (IRFU9310) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -400V RDS(on) = 7.0 G ID = -1.8A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. D -P a k T O -2 52 A A I-P a k TO -2 5 1 A A Absolute Maximum Ratings ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Max. Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds -1.8 -1.1 -7.2 50 0.40 20 92 -1.8 5.0 -24 -55 to + 150 Units A W W/C V mJ A mJ V/ns C 300 (1.6mm from case ) Thermal Resistance Parameter RJC RJA RJA Junction-to-Case Junction-to-Ambient (PCB mount)** Junction-to-Ambient Typ. Max. Units --- --- --- 2.5 50 110 C/W 7/30/97 IRFR/U9310 Electrical Characteristics @ TJ = 25C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Q gs Q gd t d(on) tr t d(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. -400 --- --- -2.0 0.91 --- --- --- --- --- --- --- --- --- --- --- IDSS Drain-to-Source Leakage Current LD Internal Drain Inductance --- LS Internal Source Inductance --- Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- V(BR)DSS V(BR)DSS/TJ I GSS Typ. --- -0.41 --- --- --- --- --- --- --- --- --- --- 11 10 25 24 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 7.0 VGS = -10V, ID = -1.1A -4.0 V VDS = VGS, I D = -250A --- S VDS = -50V, I D = -1.1A -100 VDS = -400V, VGS = 0V A -500 VDS = -320V, VGS = 0V, TJ = 125C 100 V GS = 20V nA -100 VGS = -20V 13 ID = -1.1A 3.2 nC VDS = -320V 5.0 VGS = -10V, See Fig. 6 and 13 --- VDD = -200V --- I D = -1.1A ns --- RG = 21 --- RD = 180, See Fig. 10 D Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and center of die contact S 270 --- VGS = 0V 50 --- pF VDS = -25V 8.0 --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD t rr Q rr t on Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L = 57mH RG = 25, IAS = -1.8A. (See Figure 12) ISD -1.1A, di/dt 450A/s, VDD V(BR)DSS, TJ 150C Min. Typ. Max. Units Conditions D MOSFET symbol --- --- -1.8 showing the A G integral reverse --- --- -7.2 p-n junction diode. S --- --- -4.0 V TJ = 25C, IS = -1.1A, VGS = 0V --- 170 260 ns TJ = 25C, IF = -1.1A --- 640 960 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Pulse width 300s; duty cycle 2%. This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact ** When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note #AN-994 IRFR/U9310 10 BOTTOM 1 -4.5V 0.1 VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V TOP -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) 10 VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V -4.5V TOP 20s PULSE WIDTH TJ = 25 C 1 10 1 -4.5V 0.1 100 20s PULSE WIDTH TJ = 150 C 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.5 R DS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) 10 TJ = 25 C TJ = 150 C 1 V DS = -50V 20s PULSE WIDTH 0.1 4 5 6 7 8 9 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 10 ID = -1.8A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature IRFR/U9310 VGS Ciss Crss Coss C, Capacitance (pF) 400 20 = 0V, f = 1MHz = Cgs + Cgd , Cds SHORTED = Cgd = Cds + Cgd -VGS, Gate-to-Source Voltage (V) 500 Ciss 300 200 Coss 100 Crss 0 ID = -1.1A VDS = -320V VDS = -200V VDS = -80V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 1 10 100 0 4 -VDS, Drain-to-Source Voltage (V) 8 12 16 Q G, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 10 -IID , Drain Current (A) -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 150 C 1 TJ = 25 C 0.1 1.0 V GS = 0 V 2.0 3.0 4.0 -VSD,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 10 100us 1 1ms 0.1 5.0 10us TC = 25 C TJ = 150 C Single Pulse 10 10ms 100 -VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 1000 IRFR/U9310 RD 2.0 VDS VGS -I D , Drain Current (A) 1.6 D.U.T. RG + 1.2 VDD -10V Pulse Width 1 s Duty Factor 0.1 % 0.8 Fig 10a. Switching Time Test Circuit 0.4 td(on) tr t d(off) tf VGS 10% 0.0 25 50 75 100 T C , Case Temperature 125 150 ( C) 90% VDS Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJC + T C 0.01 0.00001 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1 IRFR/U9310 L VDS D .U .T RG IA S - 20V tp VD D A D R IV E R 0 .0 1 15V Fig 12a. Unclamped Inductive Test Circuit I AS EAS , Single Pulse Avalanche Energy (mJ) 200 ID -0.8A -1.1A BOTTOM -1.8A TOP 160 120 80 40 0 25 50 75 100 125 Starting T J, Junction Temperature 150 ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F -10V QGS QGD D.U.T. +VDS VGS VG -3mA Charge Fig 13a. Basic Gate Charge Waveform IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit IRFR/U9310 Peak Diode Recovery dv/dt Test Circuit + D.U.T* Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test RG VGS * + - VDD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode [VDD] Forward Drop Inductor Curent Ripple 5% *** V GS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS [ISD ] IRFR/U9310 Package Outline TO-252AA Outline Dimensions are shown in millimeters (inches) 2.38 (.094) 2.19 (.086) 6.73 (.265) 6.35 (.250) 1.14 (.045) 0.89 (.035) -A1.27 (.050) 0.88 (.035) 5.46 (.215) 5.21 (.205) 0.58 (.023) 0.46 (.018) 4 6.45 (.245) 5.68 (.224) 6.22 (.245) 5.97 (.235) 1.02 (.040) 1.64 (.025) 1 2 10.42 (.410) 9.40 (.370) LEA D AS SIG NME NT S 1 - G AT E 3 0.51 (.020) MIN. -B 1.52 (.060) 1.15 (.045) 4 - DRA IN 3X 2X 1.14 (.045) 0.76 (.030) 2 - DRA IN 3 - S OUR CE 0.89 (.035) 0.64 (.025) 0.25 ( .010) 0.58 (.023) 0.46 (.018) M A M B NOT ES: 2.28 (.090) 1 DIME NSIO NING & T OLE RANCING P ER A NSI Y 14.5M, 1982. 2 CO NTRO LLING DIMENS ION : INCH. 3 CO NFO RMS T O JEDE C O UTLINE TO -252AA . 4.57 (.180) 4 DIME NSIO NS S HO W N ARE BEF O RE SO LD ER DIP , SO LDER DIP MA X. +0.16 (.006). Part Marking Information TO-252AA (D-Pak) E X A M P LE : T H IS IS A N IR F R 120 W IT H A S S E MB L Y LOT C OD E 9U 1P IN T E R N A T IO N A L R E CT IF IE R LO G O A IR F R 12 0 9U A S S E MB L Y L O T C OD E F IR S T P O R T ION OF P A R T N U MB E R 1P S E C O N D P O R T ION OF PART NUMBER IRFR/U9310 Package Outline TO-251AA Outline Dimensions are shown in millimeters (inches) 6.73 (.265) 6.35 (.250) 2.38 (.094) 2.19 (.086) -A- 0.58 (.023) 0.46 (.018) 1.27 ( .050) 0.88 ( .035) 5.46 (.215) 5.21 (.205) LEAD AS SIG NMENT S 4 1 - G AT E 2 - DRA IN 6.45 (.245) 5.68 (.224) 3 - S OURCE 4 - DRA IN 6.22 ( .245) 5.97 ( .235) 1.52 ( .060) 1.15 ( .045) 1 2 3 -B - NOT ES : 1 DIME NSIO NING & T OLE RANCING P ER A NSI Y14.5M, 1982. 2.28 (.090) 1.91 (.075) 2 CO NTRO LLIN G DIMENS ION : INCH. 3 CO NFO RMS TO J EDE C O UT LINE TO -252AA . 9.65 (.380) 8.89 (.350) 4 DIME NSIO NS SHOW N A RE BEF O RE SO LDER DIP , SO LDER DIP MA X. +0.16 (.006). 3X 1.14 (.045) 0.76 (.030) 2.28 (.090) 3X 1.14 (.045) 0.89 (.035) 0.89 (.035) 0.64 (.025) 0.25 (.010) 2X M A M B 0.58 (.023) 0.46 (.018) Part Marking Information TO-251AA (I-Pak) E X A M P LE : TH IS IS A N IR F U1 20 W IT H A S S E M B LY LO T C O D E 9U 1P IN TE RN A T IO N A L R E C T IF IE R LO GO IR F U 120 9U A S S E M B LY LO T C O D E F IR S T P O RT IO N O F P A R T N UM B E R 1P S E C O N D P O R T ION OF PART NUMBER IRFR/U9310 Tape & Reel Information TO-252AA TR TRR 16 .3 ( .64 1 ) 15 .7 ( .61 9 ) 1 2 .1 ( .4 76 ) 1 1 .9 ( .4 69 ) F E E D D IR E C TIO N TRL 1 6 .3 ( .6 4 1 ) 1 5 .7 ( .6 1 9 ) 8 .1 ( .3 1 8 ) 7 .9 ( .3 1 2 ) F E E D D IR E C TIO N N O T ES : 1 . C O N T R O LL IN G D IM E N S IO N : M IL LIM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S ( IN C H E S ). 3 . O U T L IN E C O N FO R M S TO E IA -48 1 & E IA -5 4 1 . 1 3 IN C H 16 m m NO T ES : 1 . O U T L IN E C O N F O R M S T O E IA -4 8 1 . WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 7/97