HSM83 Silicon Epitaxial Planar Diode for High Voltage Switching Features Pin Arrangement * High reverse voltage. (Vp=250V) 3 * MPAK package is suitable for high density f surface mounting and high speed assembly. Lj2 LH : . Top Vi Ordering Information (Top View) 4 Nc Type No Laser Mark Package Cod 2 Anode ype No. aser Mar ackage le 3 Cathode HSM83 F7 MPAK Absolute Maximum Ratings (Ta = 25C) Item Symbol Value Unit Peak reverse voltage Vm 300 V Reverse voitage Vea 250 Vv Peak forward current lem 300 mA Non-Repetitive peak forward surge current lesm * 20 CC A Average forward current ee lo 100 MA Junction temperature T; 125 G Storage temperature Tstg_ -55 to +125 C * Within 10ms forward surge current. Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test Condition Forward voltage Ve _ _ 1.2 V Ie = 100 mA Ini 0.2 Vg = 250 V Reverse current pA Ine _ 100 Vr =300V00 Capacitance Cc _ 1.5 3.0 pF VR =OV, f= 1 MHz Reverse recovery time trr _ _ 100 ns Ip=ly=30mA, Ir=3mA,Ry =100Q 125HSM83 10 10 10 10 10 Forward current Ip (A) 10 10 10 Capacitance C (pF) 1.0 0.2 0.4 0.6 08 1.0 Forward voltage Vr (V) Fig.1 Forward current Vs. Forward voltage f=1MHz 10 10 Reverse voltage Va (V) Fig.3 Capacitance Vs. Reverse voltage Reverse current Ip (A) 50 100 150 200 250 Reverse voltage Vp (V) Fig.2 Reverse current Vs. Reverse voltage 126