ST380CPbF Series Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 960 A FEATURES * Center amplifying gate * Metal case with ceramic insulator * International standard case TO-200AB (E-PUK) * Low profile hockey PUK current-carrying capability to RoHS COMPLIANT increase * Lead (Pb)-free TO-200AB (E-PUK) * Designed and qualified for industrial level TYPICAL APPLICATIONS PRODUCT SUMMARY IT(AV) * DC motor controls 960 A * Controlled DC power supplies * AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) Ths IT(RMS) Ths ITSM I2 t UNITS 960 A 55 C 1900 A 25 C 50 Hz 15 000 60 Hz 15 700 50 Hz 1130 60 Hz 1030 VDRM/VRRM Typical tq VALUES TJ A kA2s 400/600 V 100 s - 40 to 125 C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER ST380C..C VOLTAGE CODE VRSM, MAXIMUM IDRM/IRRM MAXIMUM VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ MAXIMUM V V mA 04 400 500 06 600 700 Document Number: 94410 Revision: 11-Aug-08 For technical questions, contact: ind-modules@vishay.com 50 www.vishay.com 1 ST380CPbF Series Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 960 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current at heatsink temperature IT(AV) Maximum RMS on-state current IT(RMS) TEST CONDITIONS 180 conduction, half sine wave double side (single side) cooled DC at 25 C heatsink temperature double side cooled t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2 t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t No voltage reapplied UNITS A 55 (75) C 1900 15 000 No voltage reapplied 100 % VRRM reapplied VALUES 960 (440) 15 700 Sinusoidal half wave, initial TJ = TJ maximum 13 200 1130 1030 800 100 % VRRM reapplied 11 300 Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.85 VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 0.88 Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.25 High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.24 Ipk = 3000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.60 VTM Maximum holding current IH Typical latching current IL kA2s 725 t = 0.1 to 10 ms, no voltage reapplied High level value of threshold voltage Maximum on-state voltage A 12 600 600 TJ = 25 C, anode supply 12 V resistive load 1000 kA2s V m V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current SYMBOL dI/dt TEST CONDITIONS Gate drive 20 V, 20 , tr 1 s TJ = TJ maximum, anode voltage 80 % VDRM VALUES UNITS 1000 A/s Typical delay time td Gate current 1 A, dIg/dt = 1 A/s Vd = 0.67 % VDRM, TJ = 25 C 1.0 Typical turn-off time tq ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/s, VR = 50 V, dV/dt = 20 V/s, gate 0 V 100 , tp = 500 s 100 SYMBOL TEST CONDITIONS VALUES UNITS s BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/s Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 50 mA www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 94410 Revision: 11-Aug-08 ST380CPbF Series Phase Control Thyristors Vishay High Power Products (Hockey PUK Version), 960 A TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM VALUES TEST CONDITIONS TYP. TJ = TJ maximum, tp 5 ms 10.0 TJ = TJ maximum, f = 50 Hz, d% = 50 2.0 TJ = TJ maximum, tp 5 ms 3.0 IGT TJ = 25 C TJ = - 40 C DC gate voltage required to trigger VGT TJ = 25 C TJ = 125 C DC gate current not to trigger IGD DC gate voltage not to trigger VGD TJ = TJ maximum A V 5.0 Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied TJ = 125 C Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied UNITS W 20 TJ = TJ maximum, tp 5 ms TJ = - 40 C DC gate current required to trigger MAX. 200 - 100 200 50 - 2.5 - 1.8 3.0 1.1 - mA V 10 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink Maximum thermal resistance, case to heatsink TEST CONDITIONS TJ - 40 to 125 TStg - 40 to 150 RthJ-hs RthC-hs DC operation single side cooled 0.09 DC operation double side cooled 0.04 DC operation single side cooled 0.02 DC operation double side cooled 0.01 Mounting force, 10 % Approximate weight Case style See dimensions - link at the end of datasheet C K/W 9800 (1000) N (kg) 83 g TO-200AB (E-PUK) RthJ-hs CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION SINGLE SIDE DOUBLE SIDE RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE 180 0.010 0.011 0.007 0.007 120 0.012 0.012 0.012 0.013 90 0.015 0.015 0.016 0.017 60 0.022 0.022 0.023 0.023 30 0.036 0.036 0.036 0.037 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note * The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Document Number: 94410 Revision: 11-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 ST380CPbF Series ST380C..C Series (Single Side Cooled) RthJ-hs(DC) = 0.09 K/ W 120 110 100 90 Conduction Angle 80 30 70 60 90 60 120 180 50 40 0 100 200 300 400 500 600 700 130 ST380C..C Series (Double Side Cooled) RthJ-hs(DC) = 0.04 K/ W 120 110 100 90 Conduction Period 80 70 60 30 60 50 90 40 120 180 30 DC 20 0 400 800 1200 1600 2000 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics ST380C..C Series (Single Side Cooled) RthJ-hs(DC) = 0.09 K/ W 120 110 100 90 Conduction Period 80 70 60 30 50 60 90 120 40 30 180 20 0 200 400 600 DC 800 1000 1200 Maximum Average On-state Power Loss (W) Average On-state Current (A) 130 2000 180 120 90 60 30 1800 1600 1400 RMS Limit 1200 1000 800 Conduction Angle 600 ST380C..C Series TJ = 125C 400 200 0 0 200 400 600 800 1000 1200 1400 Average On-state Current (A) Average On-state Current (A) Fig. 2 - Current Ratings Characteristics Fig. 5 - On-State Power Loss Characteristics 130 ST380C..C Series (Double Side Cooled) R thJ-hs(DC) = 0.04 K/ W 120 110 100 90 Conduction Angle 80 70 60 30 50 60 90 40 120 180 30 20 0 www.vishay.com 4 Maximum Allowable Heatsink Temperature (C) 130 Phase Control Thyristors (Hockey PUK Version), 960 A 200 400 600 800 1000 1200 1400 Maximum Average On-state Power Loss (W) Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperature (C) Vishay High Power Products 2800 DC 180 120 90 60 30 2400 2000 1600 RMSLimit 1200 Conduction Period 800 ST380C..C Series TJ = 125C 400 0 0 400 800 1200 1600 2000 Average On-state Current (A) Average On-state Current (A) Fig. 3 - Current Ratings Characteristics Fig. 6 - On-State Power Loss Characteristics For technical questions, contact: ind-modules@vishay.com Document Number: 94410 Revision: 11-Aug-08 ST380CPbF Series Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) Phase Control Thyristors Vishay High Power Products (Hockey PUK Version), 960 A 14000 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. 13000 Initial TJ = 125C @60 Hz 0.0083 s 12000 @50 Hz 0.0100 s 11000 10000 9000 8000 7000 ST380C..C Series 10 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduc tion May Not Be Maintained. Initial TJ = 125C 13000 No Voltage Reapplied 12000 Rated VRRM Reapplied 14000 11000 10000 9000 8000 7000 ST380C..C Series 6000 0.01 6000 1 15000 100 0.1 1 Pulse Train Duration (s) Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Instantaneous On-state Current (A) 10000 TJ = 25C TJ= 125C 1000 ST380C..C Series 100 0.5 1 1.5 2 2.5 3 3.5 Instantaneous On-state Voltage (V) Transient Thermal Impedance Z thJ-hs (K/ W) Fig. 9 - On-State Voltage Drop Characteristics 0.1 ST380C..C Series Steady State Value 0.01 R thJ-hs = 0.09 K/ W (Single Side Cooled) R thJ-hs = 0.04 K/ W (Double Side Cooled) (DC Operation) 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Document Number: 94410 Revision: 11-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 ST380CPbF Series Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 960 A Rectangular gate pulse a) Recommended load line for rated di/ dt : 20V, 10ohms; tr<=1 s b) Rec ommended load line for <=30% rated di/dt : 10V, 10ohms 10 tr<=1 s (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, tp tp tp tp = 4ms = 2ms = 1ms = 0.66ms (a) (b) 1 Tj=-40 C Tj=25 C Tj=125 C Instantaneous Gate Voltage (V) 100 (1) (2) (3) (4) VGD IGD 0.1 0.001 Frequency Limited by PG(AV) Device: ST380C..C Series 0.01 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 11 - Gate Characteristics ORDERING INFORMATION TABLE Device code ST 38 0 C 06 C 1 - PbF 1 2 3 4 5 6 7 8 9 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - C = Ceramic PUK 5 - Voltage code x 100 = VRRM (see Voltage Ratings table) 6 - C = PUK case TO-200AB (E-PUK) 7 - 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads) 1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads) 2 = Eyelet terminals (gate and auxiliary cathode soldered leads) 3 = Fast-on terminals (gate and auxiliary cathode soldered leads) 8 - Critical dV/dt: 9 - Lead (Pb)-free None = 500 V/s (standard selection) L = 1000 V/s (special selection) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 6 http://www.vishay.com/doc?95075 For technical questions, contact: ind-modules@vishay.com Document Number: 94410 Revision: 11-Aug-08 Outline Dimensions Vishay Semiconductors TO-200AB (E-PUK) DIMENSIONS in millimeters (inches) Anode to gate Creepage distance: 11.18 (0.44) minimum Strike distance: 7.62 (0.30) minimum 25.3 (0.99) DIA. MAX. 0.3 (0.01) MIN. 14.1/15.1 (0.56/0.59) 0.3 (0.01) MIN. 25.3 (0.99) DIA. MAX. Gate terminal for 1.47 (0.06) DIA. pin receptacle 40.5 (1.59) DIA. MAX. 2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep 6.5 (0.26) 4.75 (0.19) 25 5 42 (1.65) MAX. 28 (1.10) Quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification) Document Number: 95075 Revision: 01-Aug-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Revision: 12-Mar-12 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: ST380C06C0L VS-ST380C06C1 VS-ST380C06C0 VS-ST380C04C0 VS-ST380C04C1 VS-ST380C06C0L