IDT71V424YS IDT71V424YL 3.3V CMOS Static RAM 4 Meg (512K x 8-Bit) Features Description 512K x 8 advanced high-speed CMOS Static RAM JEDEC Center Power / GND pinout for reduced noise Equal access and cycle times -- Commercial and Industrial: 10/12/15ns Single 3.3V power supply One Chip Select plus one Output Enable pin Bidirectional data inputs and outputs directly TTL-compatible Low power consumption via chip deselect Available in 36-pin, 400 mil plastic SOJ package and 44-pin, 400 mil TSOP. The IDT71V424 is a 4,194,304-bit high-speed Static RAM organized as 512K x 8. It is fabricated using IDT's high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for highspeed memory needs. The IDT71V424 has an output enable pin which operates as fast as 5ns, with address access times as fast as 10ns. All bidirectional inputs and outputs of the IDT71V424 are TTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. The IDT71V424 is packaged in a 36-pin, 400 mil Plastic SOJ and 44pin, 400 mil TSOP. Functional Block Diagram A0 A18 * * * * * * ADDRESS DECODER 8 8 I/O0 - I/O7 4,194,304-BIT MEMORY ARRAY I/O CONTROL 8 WE OE CS CONTROL LOGIC 6468 drw 01 JULY 2004 1 (c)2004 Integrated Device Technology, Inc. DSC-6468/00 IDT71V424YS, IDT71V424YL, 3.3V CMOS Static RAM 4 Meg (512K x 8-bit) Commercial and Industrial Temperature Ranges Pin Configuration A0 A1 A2 A3 A4 CS I/O 0 I/O 1 VDD VSS I/O 2 I/O 3 WE A5 A6 A7 A8 A9 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 SO36-1 Pin Configuration 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 SOJ Top View NC A18 A17 A16 A15 OE I/O 7 I/O 6 VSS VDD I/O 5 I/O 4 A14 A13 A12 A11 A10 NC 6468 drw 02 NC 1 44 NC NC 2 43 NC A0 3 A1 4 42 41 A2 A3 5 40 NC A18 A17 6 39 A16 A4 7 38 A15 CS 8 37 OE I/0 0 I/0 9 36 10 35 I/0 7 I/0 1 VD 11 34 6 V SS D V SS SO442 12 33 I/0 2 I/0 13 32 14 31 VD I/0D 5 I/0 3 WE A5 A6 15 30 4 A14 16 29 A13 17 28 A12 A7 18 27 A11 A8 19 26 A9 20 25 A10 NC NC 21 24 NC 22 23 NC NC TSOP 6468 drw 11 Top View Pin Description Capacitance (TA = +25C, f = 1.0MHz, SOJ package) A0 - A18 Address Inputs Input CS Chip Select Input Symbol WE Write Enable Input CIN Input Capacitance OE Output Enable Input CI/O I/O Capacitance I/O0 - I/O7 Data Input/Output VDD 3.3V Power VSS Ground Parameter(1) Conditions Max. Unit VIN = 3dV 7 pF VOUT = 3dV 8 pF 6468 tbl 03 I/O NOTE: 1. This parameter is guaranteed by device characterization, but not production tested. Power Gnd 6468 tbl 02 Truth Table(1,2) CS OE WE I/O L L H DATA OUT Read Data L X L DATAIN Write Data L H H High-Z Output Disabled H X X High-Z VHC(3) X X High-Z Deselected - Standby (ISB) Deselected - Standby (ISB1) NOTES: 1. H = VIH, L = VIL, x = Don't care. 2. VLC = 0.2V, VHC = VDD -0.2V. 3. Other inputs VHC or VLC. 6.42 2 Function 6468 tbl 01 IDT71V424YS, IDT71V424YL, 3.3V CMOS Static RAM 4 Meg (512K x 8-bit) Commercial and Industrial Temperature Ranges Recommended Operating Temperature and Supply Voltage Absolute Maximum Ratings(1) Symbol Value Unit Supply Voltage Relative to VSS -0.5 to +4.6 V VIN, VOUT Terminal Voltage Relative to VSS -0.5 to VDD+0.5 TBIAS Temperature Under Bias -55 to +125 o C TSTG Storage Temperature -55 to +125 o C PT Power Dissipation 1 W IOUT DC Output Current 50 mA VDD Rating Grade Temperature VSS VDD Commercial 0C to +70C 0V See Below Industrial -40C to +85C 0V See Below V 6468 tbl 05 Recommended DC Operating Conditions Symbol 6468 tbl 04 NOTE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Parameter VDD Supply Voltage VSS Ground VIH VIL Input High Voltage Min. Typ. Max. Unit 3.0 3.3 3.6 V 0 0 0 2.0 ____ (2) Input Low Voltage VDD+0.3 ____ -0.3 V (1) V 0.8 V 6468 tbl 06 NOTES: 1. VIH (max.) = VDD+2V a.c. (Pulse Width < 5ns) for I < 20mA. 2. VIL (min.) = -2V a.c. (Pulse Width < 5ns) for I < 20mA. DC Electrical Characteristics (VDD = Min. to Max., Commercial and Industrial Temperature Ranges) IDT71V424 Symbol |ILI| |ILO| VOL VOH Parameter Test Condition Min. Max. Unit Input Leakage Current VDD = Max., VIN = VSS to VDD ___ 5 A Output Leakage Current VDD = Max., CS = VIH, VOUT = VSS to VDD ___ 5 A IOL = 8mA, VDD = Min. ___ 0.4 V 2.4 ___ V Output Low Voltage Output High Voltage IOH = -4mA, VDD = Min. 6468 tbl 07 DC Electrical Characteristics (1, 2, 3) (VDD = Min. to Max., VLC = 0.2V, VHC = VDD - 0.2V) 71V424YS/YL 10 71V424YS/YL 12 71V424YS/YL 15 Unit Symbol Parameter Dynamic Operating Current CS < VLC, Outputs Open, V DD = Max., f = fMAX(4) S ICC ISB ISB1 Com'l. Ind. (5) Com'l. Ind. (5) Com'l. Ind.(5) 180 180 170 170 160 160 mA L 165 ___ 155 155 145 145 mA Dynamic Standby Power Supply Current CS > VHC, Outputs Open, VDD = Max., f = fMAX(4) S 60 60 55 55 50 50 mA L 55 ___ 50 50 45 45 mA Full Standby Power Supply Current (static) CS > VHC, Outputs Open, VDD = Max., f = 0(4) S 20 20 20 20 20 20 mA L 10 ___ 10 10 10 10 mA NOTES: 1. All values are maximum guaranteed values. 2. All inputs switch between 0.2V (Low) and VDD - 0.2V (High). 3. Power specifications are preliminary. 4. fMAX = 1/tRC (all address inputs are cycling at fMAX); f = 0 means no address input lines are changing. 5. Standard power 10ns (S10) speed grade only. 6.42 3 6468 tbl 08 IDT71V424YS, IDT71V424YL, 3.3V CMOS Static RAM 4 Meg (512K x 8-bit) Commercial and Industrial Temperature Ranges AC Test Conditions Input Pulse Levels GND to 3.0V Input Rise/Fall Times 1.5ns Input Timing Reference Levels 1.5V Output Reference Levels 1.5V AC Test Load See Figure 1, 2 and 3 6468 tbl 09 AC Test Loads +1.5V 3.3V 50 I/O 320 Z0 = 50 DATA OUT 30pF 5pF* 350 6468 drw 03 6468 drw 04 *Including jig and scope capacitance. Figure 1. AC Test Load Figure 2. AC Test Load (for tCLZ, tOLZ, tCHZ, tOHZ, tOW, and tWHZ) 7 * 6 tAA, tACS (Typical, ns) 5 4 * 3 * 2 * 1 * * * 8 20 40 60 80 100 120 140 160 180 200 CAPACITANCE (pF) Figure 3. Output Capacitive Derating 6.42 4 6468 drw 05 IDT71V424YS, IDT71V424YL, 3.3V CMOS Static RAM 4 Meg (512K x 8-bit) Commercial and Industrial Temperature Ranges AC Electrical Characteristics (VCC = 3.3V 10%, Commercial and Industrial Temperature Ranges) 71V424S/L10(2) Symbol Parameter 71V424S/L12 71V424S/L15 Min. Max. Min. Max. Min. Max. Unit Read Cycle Time 10 ____ 12 ____ 15 ____ ns Address Access Time ____ 10 ____ 12 ____ 15 ns tACS Chip Select Access Time ____ 10 ____ 12 ____ 15 ns tCLZ(1) Chip Select to Output in Low-Z 4 ____ 4 ____ 4 ____ ns tCHZ(1) Chip Deselect to Output in High-Z ____ 5 ____ 6 ____ 7 ns tOE Output Enable to Output Valid ____ 5 ____ 6 ____ 7 ns tOLZ(1) Output Enable to Output in Low-Z 0 ____ 0 ____ 0 ____ ns tOHZ(1) Output Disable to Output in High-Z ____ 5 ____ 6 ____ 7 ns 4 ____ 4 ____ ns READ CYCLE tRC tAA tOH Output Hold from Address Change 4 ____ tPU(1) Chip Select to Power Up Time 0 ____ 0 ____ 0 ____ ns tPD(1) Chip Deselect to Power Down Time ____ 10 ____ 12 ____ 15 ns Write Cycle Time 10 ____ 12 ____ 15 ____ ns 8 ____ 8 ____ 10 ____ ns 8 ____ 8 ____ 10 ____ ns 0 ____ 0 ____ 0 ____ ns 8 ____ 8 ____ 10 ____ ns 0 ____ 0 ____ 0 ____ ns 6 ____ 6 ____ 7 ____ ns 0 ____ 0 ____ 0 ____ ns 3 ____ 3 ____ 3 ____ ns ____ 6 ____ 7 ____ 7 WRITE CYCLE tWC Address Valid to End of Write tAW Chip Select to End of Write tCW Address Set-up Time tAS Write Pulse Width tWP Write Recovery Time tWR Data Valid to End of Write tDW Data Hold Time tDH (1) tOW Output Active from End of Write tWHZ(1) Write Enable to Output in High-Z ns 6468 tbl 10 NOTES: 1. This parameter guaranteed with the AC load (Figure 2) by device characterization, but is not production tested. 2. 0C to +70C temperature range only for low power 10ns (L10) speed grade. 6.42 5 IDT71V424YS, IDT71V424YL, 3.3V CMOS Static RAM 4 Meg (512K x 8-bit) Commercial and Industrial Temperature Ranges Timing Waveform of Read Cycle No. 1(1) tRC ADDRESS tAA OE tOE tOLZ (5) C S tCLZ DATAOUT VCC SUPPLY ICC CURRENT ISB (5) tACS (3) tCHZ HIGH IMPEDANCE (5) tOHZ (5) DATAOUT VALID tPD tPU 6468 drw 06 Timing Waveform of Read Cycle No. 2(1, 2, 4) tRC ADDRESS tAA tOH DATAOUT tOH PREVIOUS DATAOUT VALID DATAOUT VALID 6468 drw 07 NOTES: 1. WE is HIGH for Read Cycle. 2. Device is continuously selected, CS is LOW. 3. Address must be valid prior to or coincident with the later of CS transition LOW; otherwise tAA is the limiting parameter. 4. OE is LOW. 5. Transition is measured 200mV from steady state. 6.42 6 IDT71V424YS, IDT71V424YL, 3.3V CMOS Static RAM 4 Meg (512K x 8-bit) Commercial and Industrial Temperature Ranges Timing Waveform of Write Cycle No. 1 (WE Controlled Timing)(1, 2, 4) tWC ADDRESS tAW C S tWR tAS tWP (2) WE tWHZ (5) DATAOUT tOW HIGH IMPEDANCE (3) (3) tDH tDW DATAIN tCHZ (5) (5) DATAIN VALID 6468 drw 08 Timing Waveform of Write Cycle No. 2 (CS Controlled Timing)(1, 4) tWC ADDRESS tAW C S tAS tCW tWR WE tDW DATAIN tDH DATAIN VALID 6468 drw 09 NOTES: 1. A write occurs during the overlap of a LOW CS and a LOW WE. 2. OE is continuously HIGH. During a WE controlled write cycle with OE LOW, tWP must be greater than or equal to tWHZ + tDW to allow the I/O drivers to turn off and data to be placed on the bus for the required tDW. If OE is HIGH during a WE controlled write cycle, this requirement does not apply and the minimum write pulse is the specified tWP. 3. During this period, I/O pins are in the output state, and input signals must not be applied. 4. If the CS LOW transition occurs simultaneously with or after the WE LOW transition, the outputs remain in a high impedance state. CS must be active during the tCW write period. 5. Transition is measured 200mV from steady state. 6.42 7 IDT71V424YS, IDT71V424YL, 3.3V CMOS Static RAM 4 Meg (512K x 8-bit) Commercial and Industrial Temperature Ranges Ordering Information IDT 71V424 Device Type X X Die Power Revision XX XXX Speed Package X X Process/ Temperature Range Blank I Commercial (0C to +70C) Industrial (-40C to +85C) G Restricted hazardous substance device Y PH 36-pin 400 mil SOJ (SO36-1) 44-pin TSOP Type II (SO44-2) 10* 12 15 Speed in nanoseconds S L Standard Power Low Power Y Second Generation die step * Commercial only for low power 10ns (L10) speed grade. 6468 drw 10 6.42 8 IDT71V424YS, IDT71V424YL, 3.3V CMOS Static RAM 4 Meg (512K x 8-bit) Commercial and Industrial Temperature Ranges Datasheet Document History 07/16/04 Released new datasheet CORPORATE HEADQUARTERS 6024 Silver Creek Valley Road San Jose, CA 95138 for SALES: 800-345-7015 or 408-284-8200 fax: 408-284-2775 www.idt.com The IDT logo is a registered trademark of Integrated Device Technology, Inc. 6.42 9 for Tech Support: ipchelp@idt.com 800-345-7015