Jul. 2005
MITSUBISHI HVIGBT MODULES
CM800DZ-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
●IC ................................................................... 800A
●VCES ....................................................... 1700V
●Insulated Type
●2-element in a Pack
●AISiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
CM800DZ-34H
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM
G1 G2
E1
E1 E2
E2
C1
4 - M8 NUTS
6 - M4 NUTS
C2
C2
C1
114
31.5
5753
4440
28
14
20
30
140
130
16 18
5
11.85
55.2
11.5
35
5
57±0.25 57±0.25
124±0.25
+2
0
6 - φ 7 MOUNTING HOLES
LABEL
screwing depth
min. 16.5
screwing depth
min. 7.7
38
+2
0
CIRCUIT DIAGRAM
E1
C1
G1
4(E1)
3(C1)
C2
E2
G2
2(C2)
1(E2)
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Jul. 2005
MITSUBISHI HVIGBT MODULES
CM800DZ-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS
Collector-emitter voltage
Gate-emitter voltage
Maximum power dissipation
Junction temperature
Operating temperature
Storage temperature
Isolation voltage
Maximum short circuit pulse
width
VGE = 0V, Tj = 25°C
VCE = 0V, Tj = 25°C
TC = 80°C
Pulse (Note 1)
Pulse (Note 1)
TC = 25°C, IGBT part
RMS, sinusoidal, f = 60Hz, t = 1min.
VCC = 1150V, VCES ≤ 1700V, VGE = 15V
Tj = 125°C
Collector current
Emitter current
1700
±20
800
1600
800
1600
6200
–40 ~ +150
–40 ~ +125
–40 ~ +125
4000
10
Symbol Item Conditions UnitRatings
V
V
A
A
A
A
W
°C
°C
°C
V
µs
VCES
VGES
IC
ICM
IE
(Note 2)
IEM
(Note 2)
PC
(Note 3)
Tj
Top
Tstg
Viso
tpsc
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
VCE = VCES, VGE = 0V, Tj = 25°C
VGE = VGES, VCE = 0V, Tj = 25°C
IC = 800A, VGE = 15V, Tj = 25°C (Note 4)
IC = 800A, VGE = 15V, Tj = 125°C (Note 4)
VCC = 850V, IC = 800A, VGE = 15V, Tj = 25°C
IE = 800A, VGE = 0V, Tj = 25°C (Note 4)
IE = 800A, VGE = 0V, Tj = 125°C (Note 4)
VCC = 850V, IC = 800A, VGE = ±15V
RG(on) = 3.3Ω, Tj = 125°C, Ls = 150nH
Inductive load
VCC = 850V, IC = 800A, VGE = ±15V
RG(off) = 3.3Ω, Tj = 125°C, Ls = 150nH
Inductive load
VCC = 850V, IC = 800A, VGE = ±15V
RG(on) = 3.3Ω, Tj = 125°C, Ls = 150nH
Inductive load
V
V
Min Typ Max
12
0.5
3.30
—
—
—
—
—
3.00
—
1.60
1.30
—
2.70
0.50
—
2.70
—
—
mA
µA
nF
nF
nF
µC
V
µs
µs
mJ/pulse
µs
µs
mJ/pulse
µs
µC
mJ/pulse
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
ICES
IGES
Cies
Coes
Cres
Qg
VEC
(Note 2)
td(on)
tr
Eon
td(off)
tf
Eoff
trr
(Note 2)
Qrr
(Note 2)
Erec
(Note 2)
Symbol Item Conditions
VGE(th)
VCE(sat)
Limits Unit
4.5
Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C).
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
3. Junction temperature (Tj) should not exceed Tjmax rating (150°C).
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
6.5
ELECTRICAL CHARACTERISTICS
Collector cut-off current
Gate-emitter
threshold voltage
Gate leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Emitter-collector voltage
Turn-on delay time
Turn-on rise time
Turn-on switching energy
Turn-off delay time
Turn-off fall time
Turn-off switching energy
Reverse recovery time
Reverse recovery charge
Reverse recovery energy
IC = 80mA, VCE = 10V, Tj = 25°C
VCE = 10V, f = 100kHz
VGE = 0V, Tj = 25°C
—
—
2.60
3.10
72
9.0
3.6
6.6
2.30
2.00
—
—
350
—
—
260
—
300
120
5.5
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Jul. 2005
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Junction to Case, IGBT part, 1/2 module
Junction to Case, FWDi part, 1/2 module
Case to Fin, λgrease = 1W/m·K, 1/2 module
K/kW
K/kW
K/kW
Thermal resistance
Contact thermal resistance
Min Typ Max
20.0
34.0
—
—
—
16.0
—
—
—
THERMAL CHARACTERISTICS
Symbol Item Conditions Limits Unit
M
—
CTI
d
a
d
s
L
C-E(int)
R
C-E(int)
M8 : Main terminals screw
M6 : Mounting screw
M4 : Auxiliary terminals screw
IGBT part
TC = 25°C
N·m
kg
—
mm
mm
nH
mΩ
Mounting torque
Mass
Comparative tracking index
Clearance distance in air
Creepage distance along surface
Internal inductance
Internal lead resistance
Min Typ Max
13.0
6.0
2.0
—
—
—
—
—
—
—
—
—
1.0
—
—
—
18
0.16
7.0
3.0
1.0
—
250
10.0
15.0
—
—
MECHANICAL CHARACTERISTICS
Symbol Item Conditions Limits Unit
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM800DZ-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
http://store.iiic.cc/
Jul. 2005
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM800DZ-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
1000
1200
1400
1600
800
600
400
200
03 4210 56
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE (V)
COLLECTOR CURRENT (A)
1000
1200
1400
1600
800
600
400
200
06 8420 10 12
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE (V)
COLLECTOR CURRENT (A)
EMITTER-COLLECTOR VOLTAGE (V)
66
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
5
4
3
2
0400 8000 1200 1600
COLLECTOR CURRENT (A)
1
COLLECTOR-EMITTER SATURATION VOLTAGE (V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
5
4
3
2
0400 8000 1200 1600
EMITTER CURRENT (A)
1
T
j
= 25°C V
GE
= 15V
V
GE
= 10V
V
GE
= 8V
V
GE
= 12V
V
GE
= 20V
T
j
= 25°C
T
j
= 125°C
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
V
GE
= 15V
http://store.iiic.cc/
Jul. 2005
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM800DZ-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
10
2
10
3
10
1
10
0
10
0
10
-1
23 57
10
1
10
2
CAPACITANCE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE (V)
CAPACITANCE (nF)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
GATE CHARGE (µC)
GATE-EMITTER VOLTAGE (V)
COLLECTOR CURRENT (A)
SWITCHING ENERGIES (mJ/pulse)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
GATE RESISTANCE (Ω)
SWITCHING ENERGIES (mJ/pulse)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
20
16
12
8
4
04 620 810
1000
800
600
400
200
012008004000 1600
1200
800
1000
600
400
200
015 20105025
23 57 23 57
2
3
5
7
2
3
5
7
2
3
5
7
V
CC
= 850V, I
C
= 800A
T
j
= 25°C
E
on
E
off
E
rec
E
off
C
ies
C
oes
C
res
V
CC
= 850V, I
C
= 800A
V
GE
= ±15V
T
j
= 125°C, Inductive load
V
CC
= 850V, V
GE
= ±15V
R
G(on)
= R
G(off)
= 3.3Ω
T
j
= 125°C, Inductive load
E
on
V
GE
= 0V, T
j
= 25°C
f = 100kHz
E
rec
http://store.iiic.cc/
Jul. 2005
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM800DZ-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
COLLECTOR CURRENT (A)
SWITCHING TIMES (µs)
REVERSE RECOVERY CURRENT (A)
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT (A)
REVERSE RECOVERY TIME (µs)
FREE-WHEEL DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE (V)
COLLECTOR CURRENT (A)
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
2500
2000
1500
1000
500
0150010005000 2000
TIME (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
NORMALIZED TRANSIENT THERMAL IMPEDANCE
23 57
1.2
1.0
0.8
0.6
0.4
0
10
-2
10
-1
10
-3
10
0
10
1
0.2
23 57 23 57 23 57
10
0
10
1
10
-1
10
-2
2
3
5
7
2
3
5
7
2
3
5
7
10
3
10
4
10
2
10
1
10
1
10
2
10
0
10
-1
10
2
10
1
23 57 10
3
10
4
23 57 23 57
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
10
2
10
1
23 57 10
3
10
4
23 57 23 57
V
CC ≤ 1150V, VGE = +/-15V
Tj = 125°C, RG(off) ≥ 3.3Ω
Single Pulse, TC = 25°C
Rth(j–c)Q = 20K/kW
Rth(j–c)R = 34K/kW
VCC = 850V, VGE = ±15V
RG(on) = RG(off) = 3.3Ω
Tj = 125°C, Inductive load
VCC = 850V, VGE = ±15V
RG(on) = RG(off) = 3.3Ω
Tj = 125°C, Inductive load
lrr
trr
td(off)
td(on)
tf
tr
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