KVR1333D3D8R9SK3/12G
12GB (4GB 512M x 72-Bit x 3 pcs.) PC3-10600
CL9 Registered w/Parity 240-Pin DIMM Kit
DESCRIPTION
ValueRAM's KVR1333D3D8R9SK3/12G is a kit of three
512M x 72-bit (4GB) DDR3-1333 CL9 SDRAM (Synchronous
DRAM), registered w/parity, 2Rx8 ECC memory modules,
based on eighteen 256M x 8-bit DDR3-1333 FBGA components
per module. Total kit capacity is 12GB. The SPDs are pro-
grammed to JEDEC standard latency DDR3-1333 timing of
9-9-9. Each 240-pin DIMM uses gold contact fingers. The
electrical and mechanical specifications are as follows:
FEATURES
•JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
•VDDQ = 1.5V (1.425V ~ 1.575V)
•667MHz fCK for 1333Mb/sec/pin
•8 independent internal bank
•Programmable CAS Latency: 9, 8, 7, 6
•Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
•Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
•8-bit pre-fetch
•Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
•Bi-directional Differential Data Strobe
•Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
•On Die Termination using ODT pin
•On-DIMM thermal sensor (Grade B)
•Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
•Asynchronous Reset
•PCB : Height 1.180” (30.00mm), double sided component
Document No. VALUERAM0974-001.A00 05/18/11 Page 1
Memory Module Specifi cations
SPECIFICATIONS
CL(IDD) 9 cycles
Row Cycle Time (tRCmin) 49.5ns (min.)
Refresh to Active/Refresh 160ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin) 36ns (min.)
Power (Operating) 2.812 W* (per module)
UL Rating 94 V - 0
Operating Temperature 0o C to 85o C
Storage Temperature -55o C to +100o C
*Power will vary depending on the SDRAM and
Register/PLL used.
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